A metal chemical vapor deposition apparatus

Abstract

The application discloses a metal chemical vapor deposition device, which comprises a plurality of MOVCD reaction modules arranged in a linear array; a reaction shell is arranged at the top of a base, and the reaction shell and the base enclose a reaction cavity; opposite sides of the reaction shell are respectively provided with an air inlet and an air outlet for the reaction gas to enter and discharge the reaction cavity; a containing cavity is arranged in the base, and the containing cavity and the reaction cavity are connected through a through hole; a wafer carrier is used for carrying a wafer; a rotating structure is connected with the wafer carrier and is suitable for driving the wafer carrier to rotate the wafer when the wafer is heated. The MOVCD reaction module in the structure is a metal chemical vapor deposition reaction module, the number of the MOVCD reaction modules is reasonable, the waste of the equipment is caused, the uniformity of the wafer and the production capacity are considered.

Description

Technical Field

[0001] This invention relates to the field of metal chemical vapor deposition technology, and more specifically to a metal chemical vapor deposition apparatus. Background Technology

[0002] Metal-organic chemical vapor deposition (MOCVD) is a high-temperature deposition equipment for compound semiconductors, specifically metal-organic sources that decompose at high temperatures. These materials have extremely high requirements for crystal quality, thickness uniformity, and composition. Therefore, MOCVD equipment has relatively high requirements for temperature uniformity and gas flow uniformity.

[0003] Currently, all mainstream MOCVD equipment on the market are multi-wafer machines. Some multi-wafer machines have a graphite structure design where multiple wafers are placed on a single graphite disk that rotates at high speed. The advantage of this design is high throughput, but it cannot adjust the temperature and thickness uniformity of each wafer. Another type of multi-wafer machine has a graphite structure where multiple wafers are placed on a single graphite disk, with a larger disk revolving around a central disk and a smaller disk rotating on its own axis. This means that the rotation speed of each wafer can be adjusted independently. The advantage of this design is good uniformity, but the disadvantage is high throughput. Existing MOCVD equipment cannot simultaneously achieve both wafer uniformity and throughput. Summary of the Invention

[0004] Therefore, the technical problem to be solved by the present invention is that existing MOCVD equipment cannot simultaneously achieve wafer uniformity and production capacity.

[0005] Therefore, the present invention provides a metal chemical vapor deposition apparatus, comprising:

[0006] The metal chemical vapor deposition apparatus includes several MOVCD reaction modules, which are arranged in a linear array.

[0007] The MOVCD reaction module includes:

[0008] Base;

[0009] A reaction housing is disposed at the top of the base, and the reaction housing and the base enclose a reaction chamber. An air inlet and an air outlet are respectively provided on opposite sides of the reaction housing for the gas to be reacted to enter and exit the reaction chamber.

[0010] A wafer stage, wherein a accommodating cavity is formed in the base, the accommodating cavity is connected to the reaction cavity through a through hole, the wafer stage is disposed on the side of the accommodating cavity near the reaction cavity, and the wafer stage is used to support the wafer;

[0011] The MOVCD reaction module further includes a rotating structure connected to the wafer stage, which is adapted to drive the wafer stage to rotate the wafer when the wafer is heated, so as to achieve uniform heating of the wafer.

[0012] Optionally, the above-described metal chemical vapor deposition apparatus further includes a gas delivery structure, the gas delivery structure comprising:

[0013] An air intake assembly is provided with several air intake channels. One end of the air intake channel near the base corresponds to and is connected to the air inlet. The other end is adapted to be connected to the air intake device so that the gas to be reacted flows from the air intake device through the air intake channel and the air inlet into the reaction chamber.

[0014] The gas outlet assembly has several gas outlet channels, one end of each gas outlet channel is corresponding to the gas outlet, and the other end of each gas outlet channel is adapted to communicate with the outside to discharge the gas inside the reaction chamber.

[0015] Optionally, the above-mentioned air intake assembly includes several air intake plates;

[0016] Several air intakes are stacked one on top of the other.

[0017] And / or, each air intake plate is provided with multiple air intake channels spaced apart along its length, and the reaction gas introduced into each air intake plate is different.

[0018] Optionally, the above-mentioned air intake assembly includes 1-7 layers of air intake plates.

[0019] Optionally, the above-mentioned air outlet component includes:

[0020] The main body of the gas outlet assembly is a plate-shaped or block-shaped structure disposed on the gas outlet side of the base near the reaction shell;

[0021] The first gas outlet channel is located on the side of the gas outlet assembly body near the reaction shell. Several first gas outlet channels are provided, and each first gas outlet channel corresponds to and is connected to the gas outlet.

[0022] The second gas outlet channel is located on the side of the gas outlet assembly body away from the reaction shell and connects the first gas outlet channel to the outside. The gas outlet ends of several first gas outlet channels are connected to the gas inlet ends of the second gas outlet channel, so that the gas discharged from the reaction chamber is merged into the second gas outlet channel through several first gas outlet channels and then discharged.

[0023] Optionally, the above-mentioned second gas outlet channel is provided, and the side of the second gas outlet channel near the reaction shell is connected to the first gas outlet channel.

[0024] Optionally, the inner diameter of the second air outlet channel is larger than the inner diameter of the first air outlet channel.

[0025] Optionally, the above-mentioned rotating structure includes:

[0026] A connector is disposed on the side of the wafer stage away from the reaction chamber;

[0027] A power assembly is provided on the side of the connector away from the wafer stage. The power output end of the power assembly is connected to the connector. The power assembly is used to drive the wafer stage to rotate through the connector.

[0028] Optionally, the above-mentioned metal chemical vapor deposition apparatus further includes a heating structure;

[0029] The heating structure is fixedly disposed on the side of the accommodating cavity away from the reaction cavity, and the heating end of the heating structure is disposed opposite to the wafer stage. The heating structure is used to provide heat to the wafer stage.

[0030] Optionally, the heating end of the heating structure described above is configured as a heating wire;

[0031] The wafer stage is provided in several places, and the metal chemical vapor deposition apparatus also includes an isolation plate. The isolation plate is disposed in the reaction chamber and between two adjacent wafer disks to prevent temperature transfer between the two adjacent wafer disks.

[0032] The technical solution provided by this invention has the following advantages:

[0033] 1. This embodiment provides a metal chemical vapor deposition (MOVCD) apparatus, which includes several MOVCD reaction modules arranged in a linear array. Each MOVCD reaction module includes a base, a reaction housing, a wafer stage, and a rotating structure. The reaction housing is located at the top of the base, and the reaction housing and the base form a reaction chamber. An inlet and an outlet are respectively provided on opposite sides of the reaction housing for the gas to be reacted to enter and exit the reaction chamber. A receiving cavity is provided inside the base, and the receiving cavity is connected to the reaction chamber through a through hole. The wafer stage is located on the side of the receiving cavity near the reaction chamber and is used to support the wafer. The rotating structure is connected to the wafer stage and is suitable for driving the wafer stage to rotate the wafer when the wafer is heated, so as to achieve uniform heating of the wafer.

[0034] The MOVCD reaction module in this structure is a metal chemical vapor deposition reaction module. The base of the MOVCD reaction module is horizontally placed at the bottom to support the other structures. The reaction shell is a downward-facing cap-like structure that covers the top surface of the base, sealed with a sealing ring. The reaction shell and base together form a reaction chamber. Inlet and outlet ports are located on opposite sides of the reaction shell, both situated on the side along its length. The outlet port introduces the gas to be reacted into the reaction chamber, where it reacts and is then discharged through the outlet port. A receiving cavity is formed within the base, positioned opposite the reaction chamber and connected by a through-hole. A wafer stage is located on the side of the receiving cavity closest to the reaction chamber, with a very small gap between them. The wafer stage is horizontally placed to hold the wafer. The wafer is positioned within a through-hole, with the side of the wafer furthest from the wafer stage exposed within the reaction chamber and in contact with the gas to be reacted. The MOVCD reaction module also includes a rotating structure, which is installed within the accommodating cavity on the side of the wafer stage furthest from the wafer. The power output of the rotating structure is connected to the wafer stage, driving the wafer stage and thus rotating the wafer. This ensures that during the heating process, each part of the wafer is indirectly in contact with the heating structure, achieving uniform heating and ensuring uniformity. Furthermore, the metal chemical vapor deposition apparatus includes several MOVCD reaction modules arranged in a linear array along the length of the base. This ensures overall production efficiency and allows for adjustment based on required output. While meeting work requirements, this avoids waste by using a reasonable number of MOVCD reaction modules.

[0035] 2. In this embodiment, several air intake plates are stacked one on top of the other, and each air intake plate is provided with multiple air intake channels spaced apart along the length direction; and the reaction gas introduced into each air intake plate is different; the air intake assembly includes 1-7 air intake plates.

[0036] The air intake assembly in this structure includes several air intake plates, which are stacked one on top of the other to form the air intake assembly. Air intake channels are opened on the air intake plates and are spaced apart along the length of the air intake plates to ensure that the air intake channels and air inlets correspond to each other. The optimal number of air intake plate layers is 1-7. When introducing the gas to be reacted, different gases can be introduced through different air intake channels, thereby avoiding interference between different gases during the transportation process, which would ultimately affect the gas phase reaction in the reaction chamber.

[0037] 3. In this embodiment, the gas outlet assembly includes: a gas outlet assembly body, a first gas outlet channel, and a second gas outlet channel; the gas outlet assembly body is a plate-shaped or block-shaped structure disposed on the gas outlet side of the base near the reaction shell; the first gas outlet channel is opened on the side of the gas outlet assembly body near the reaction shell, and several first gas outlet channels are provided, each corresponding to a gas outlet and connected to it; the second gas outlet channel is disposed on the side of the gas outlet assembly body away from the reaction shell, and connects the first gas outlet channel to the outside, and the gas outlet ends of several first gas outlet channels are all connected to the gas inlet end of the second gas outlet channel, so that the gas discharged from the reaction chamber is merged into the second gas outlet channel through several first gas outlet channels before being discharged.

[0038] The gas outlet assembly in this structure includes a main body, which is configured as a block or plate structure. The main body is positioned on one side of the gas outlet of the reaction shell and mounted on a base. The main body fits snugly against the reaction shell, and a sealing ring is used to seal the connection between the main body and the shell. The main body includes a first gas outlet channel and a second gas outlet channel. The first gas outlet channel is located on the side of the main body near the gas outlet and is spaced apart along the length of the reaction shell. One end of the first gas outlet channel is opposite to the gas outlet, and the other end is connected to the second gas outlet channel. Several first gas outlet channels are provided, and the outlet ends of each first gas outlet channel are connected to the inlet end of the second gas outlet channel. The outlet end of the second gas outlet channel is connected to the external space. An additional filter is connected to the outlet end of the second gas outlet channel to filter impurities carried out from the reaction chamber. An air pump is connected to the other end of the filter to drive the gas flow within the metal chemical vapor deposition apparatus, thereby increasing the flow rate. Attached Figure Description

[0039] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0040] Figure 1 This is a schematic diagram of the overall structure of the metal chemical vapor deposition apparatus provided in this invention.

[0041] Figure 2 This is a schematic diagram of the air intake plate provided in this invention;

[0042] Figure 3 These are two axonometric views of the air outlet assembly provided in this invention;

[0043] Figure 4 This is a top view of the wafer stage provided in this invention;

[0044] Figure 5 This is a schematic diagram showing the positions of the wafer stage and heating wire provided in this invention;

[0045] Figure 6 This is a schematic diagram of the internal structure of the base provided in this invention;

[0046] Explanation of reference numerals in the attached figures:

[0047] 1 - Base;

[0048] 2 - Reaction shell;

[0049] 3 - Wafer stage;

[0050] 4 – Rotating structure; 41 – Connector; 42 – Power assembly;

[0051] 5 – Gas delivery structure; 51 – Inlet assembly; 511 – Inlet plate; 512 – Inlet channel; 52 – Outlet assembly; 521 – Outlet assembly body; 522 – Outlet channel; 5221 – First outlet channel; 5222 – Second outlet channel;

[0052] 6 - Heating structure. Detailed Implementation

[0053] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0054] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0055] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0056] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0057] Example 1

[0058] This embodiment provides a metal chemical vapor deposition apparatus, such as... Figures 1 to 6 As shown, the metal chemical vapor deposition apparatus includes several MOVCD reaction modules arranged in a linear array. Each MOVCD reaction module includes a base 1, a reaction housing 2, a wafer stage 3, and a rotating structure 4. The reaction housing 2 is located at the top of the base 1, and the reaction housing 2 and the base 1 form a reaction chamber. Gas inlets and outlets are respectively provided on opposite sides of the reaction housing 2 for the gas to be reacted to enter and exit the reaction chamber. The base 1 has an opening that communicates with the reaction chamber through a through hole. The wafer stage 3 is located on the side close to the reaction chamber and is used to support the wafer. The rotating structure 4 is connected to the wafer stage 3 and is adapted to drive the wafer stage 3 to rotate the wafer when the wafer is heated, so as to achieve uniform heating of the wafer.

[0059] The MOVCD reaction module in this structure is a metal chemical vapor deposition reaction module. The base 1 of the MOVCD reaction module is horizontally placed at the bottom to support the other structures. The reaction shell 2 is a downward-facing cover structure that covers the top surface of the base 1. A sealing ring is used to seal the two. The reaction shell 2 and the base 1 together form a reaction chamber. An inlet and an outlet are respectively provided on opposite sides of the reaction shell 2, located on the side where the reaction shell 2's length lies. The outlet is used to introduce the gas to be reacted into the reaction chamber, where it reacts and is then discharged through the outlet. The base 1 has an opening opposite the reaction chamber, connected by a through-hole. A wafer stage 3 is located near the reaction chamber, with a very small gap between them. The wafer stage 3 is horizontally placed and used to hold the wafer. The wafer is placed horizontally on the wafer stage 3, positioned within the through-hole. Inside, the side of the wafer furthest from the wafer stage 3 is exposed in the reaction chamber and comes into contact with the gas to be reacted in the reaction chamber. The MOVCD reaction module also includes a rotating structure 4, which is installed inside. The rotating structure 4 is installed on the side of the wafer stage 3 furthest from the wafer. The power output end of the rotating structure 4 is connected to the wafer stage 3. The rotating structure 4 drives the wafer stage 3, thereby causing the wafer to rotate. This allows each part of the wafer to make indirect contact with the heating device evenly during the heating process, thereby achieving uniform heating of the wafer and ensuring uniformity. Furthermore, the metal chemical vapor deposition apparatus includes several MOVCD reaction modules. The MOVCD reaction modules are arranged in a linear array along the length of the base 1, which can ensure overall production efficiency and can be adjusted according to the required output. While ensuring the completion of work requirements, the use of a reasonable number of MOVCD reaction modules avoids equipment waste and can balance wafer uniformity and production capacity.

[0060] In this embodiment, as Figures 1 to 6 As shown, the metal chemical vapor deposition apparatus also includes a gas delivery structure 5, which includes an inlet assembly 51 and an outlet assembly 52. ​​The inlet assembly 51 has several inlet channels 512. One end of the inlet channel 512 near the base 1 corresponds to and is connected to the inlet port, and the other end is adapted to be connected to the inlet device so that the gas to be reacted flows from the inlet device through the inlet channel 512 and the inlet port into the reaction chamber. The outlet assembly 52 has several outlet channels 522. One end of the outlet channel 522 corresponds to the outlet port, and the other end of the outlet channel 522 is adapted to be connected to the outside to discharge the gas inside the reaction chamber.

[0061] The metal chemical vapor deposition apparatus in this structure also includes a gas delivery structure 5, which is used to deliver gas. The gas delivery structure 5 includes an inlet assembly 51 and an outlet assembly 52. ​​The inlet assembly 51 has several inlet channels 512. The inlet assembly 51 is mounted on the base 1 and is located on the side near the inlet. The side of the inlet assembly 51 is attached to the reaction shell 2 and sealed between them with a sealing ring. The inlet channels 512 on the inlet assembly 51 are corresponding to the inlets, and one end of the inlet channel 512 is connected to the inlet. The end is connected to the air intake device, which introduces the gas to be reacted into the air intake channel 512. The gas to be reacted enters the reaction chamber through the air intake channel 512 and the air inlet. The air outlet component 52 is set on one side of the air outlet and is mounted on the base 1. The air outlet component 52 is set in close contact with the reaction shell 2. The air outlet component 52 and the reaction shell 2 are sealed with a sealing ring. One end of the air outlet channel 522 is set corresponding to the air outlet, and the other end of the air outlet channel 522 is connected to the outside. The air outlet channel 522 is connected to the air outlet. The gas in the reaction chamber enters the air outlet channel 522 through the air outlet and is discharged.

[0062] In this embodiment, as Figures 1 to 6 As shown, the air intake assembly 51 includes several air intake plates 511, which are stacked one on top of the other.

[0063] The air intake assembly 51 in this structure includes several air intake plates 511, which are stacked so that the overall height of the air intake plates 511 is consistent with the height of the reaction shell 2, preventing leakage of the gas to be reacted due to deviation in the sealing of the sealing ring.

[0064] In this embodiment, the air intake assembly 51 includes a plurality of air intake plates 511, and each air intake plate 511 is provided with a plurality of air intake channels 512 spaced apart along the length direction.

[0065] The air intake assembly 51 in this structure includes several air intake plates 511. Each air intake plate 511 has multiple air intake channels 512. The multiple air intake channels 512 are spaced apart along the length of the air intake plate 511 to ensure that the air intake channels 512 correspond to the air intake ports.

[0066] In this embodiment, as Figures 1 to 6 As shown, several air intake plates 511 are stacked one on top of the other, and each air intake plate 511 has multiple air intake channels 512 spaced apart along its length; and the reaction gas introduced into each air intake plate 511 is different; the air intake assembly 51 includes 1-7 air intake plates 511.

[0067] The air intake assembly 51 in this structure includes several air intake plates 511, which are stacked one on top of the other to form the air intake assembly 51. Air intake channels 512 are opened on the air intake plates 511 and are spaced apart along the length of the air intake plates 511 to ensure that the air intake channels 512 correspond to the air inlets. The optimal number of air intake plates 511 is 1-7. When introducing the gas to be reacted, different gases can be introduced through different air intake channels 512, thereby avoiding interference between different gases during the transportation process, which would ultimately affect the gas phase reaction in the reaction chamber.

[0068] In this embodiment, as Figures 1 to 6 As shown, the gas outlet assembly 52 includes: a gas outlet assembly body 521, a first gas outlet channel 5221, and a second gas outlet channel 5222. The gas outlet assembly body 521 is a plate-shaped or block-shaped structure disposed on the gas outlet side of the base 1 near the reaction shell 2. The first gas outlet channel 5221 is opened on the side of the gas outlet assembly body 521 near the reaction shell 2. Several first gas outlet channels 5221 are provided, and each first gas outlet channel 5221 corresponds to and is connected to a gas outlet. The second gas outlet channel 5222 is disposed on the side of the gas outlet assembly body 521 away from the reaction shell 2 and connects the first gas outlet channel 5221 to the outside. The gas outlet ends of several first gas outlet channels 5221 are all connected to the gas inlet ends of the second gas outlet channel 5222, so that the gas discharged from the reaction chamber is merged into the second gas outlet channel 5222 after passing through several first gas outlet channels 5221 before being discharged.

[0069] The gas outlet assembly 52 in this structure includes a gas outlet assembly body 521, which is configured as a block or plate structure. The gas outlet assembly body 521 is located on one side of the gas outlet of the reaction shell 2 and is mounted on the base 1. The gas outlet assembly body 521 is fitted to the reaction shell 2 and sealed with a sealing ring. The gas outlet assembly body 521 includes a first gas outlet channel 5221 and a second gas outlet channel 5222. The first gas outlet channel 5221 is located on the side of the gas outlet assembly body 521 near the gas outlet and is spaced apart along the length of the reaction shell 2. One end of the first gas outlet channel 5221 is positioned opposite to the gas outlet, and the other end of the first gas outlet channel 5221 is connected to the second gas outlet channel 5222. Several first gas outlet channels 5221 are provided, and the gas outlet ends of several first gas outlet channels 5221 are all connected to the gas inlet end of the second gas outlet channel 5222. The gas outlet end of the second gas outlet channel 5222 is connected to the external space. The gas outlet end of the second gas outlet channel 5222 is also additionally connected to a filter, which is used to filter impurities carried out from the reaction chamber. The other end of the filter is also connected to an air pump, which is used to drive the gas flow in the metal chemical vapor deposition device, thereby increasing the flow rate.

[0070] In this embodiment, as Figures 1 to 6 As shown, a second gas outlet channel 5222 is provided, and the side of the second gas outlet channel 5222 near the reaction shell 2 is connected to the first gas outlet channel 5221.

[0071] The inner diameter of the second air outlet channel 5222 is larger than the inner diameter of the first air outlet channel 5221.

[0072] This structure features a second exhaust channel 5222, where the exhaust ends of several first exhaust channels 5221 are connected to the intake ends of the second exhaust channel 5222. This allows all the gas from the first exhaust channels 5221 to enter a single second exhaust channel 5222, facilitating subsequent gas processing. For example, only one filter needs to be placed at the exhaust end of the second exhaust channel 5222, simplifying construction and avoiding wasted mechanical efficiency. The inner diameter of the second exhaust channel 5222 is larger than that of the first exhaust channel 5221. This allows the gas in the first exhaust channel 5221 to enter the second exhaust channel 5222 more smoothly. Furthermore, the second exhaust channel 5222 can hold more gas, ensuring smooth gas flow and preventing the accumulation of internal pressure due to gas blockage, thus preventing the risk of cylinder explosion.

[0073] In this embodiment, as Figures 1 to 6 As shown, the rotating structure 4 includes a connector 41 and a power assembly 42. The connector 41 is located on the side of the wafer stage 3 away from the reaction chamber. The power assembly 42 is located on the side of the connector 41 away from the wafer stage 3. The power output end of the power assembly 42 is connected to the connector 41. The power assembly 42 is used to drive the wafer stage 3 to rotate through the connector 41.

[0074] The rotating structure 4 in this structure includes a connector 41 and a power assembly 42. The connector 41 is a sleeve-shaped rotating body, and the power assembly 42 can be a rotary motor. The connector 41 is located inside, and one end of the connector 41 is connected to the wafer stage 3. During installation, it is necessary to ensure that the center of the connector 41 coincides with the axis of the wafer stage 3. The other end of the connector 41 is connected to the power output end of the power assembly 42. The fixed end of the power assembly 42 is fixed inside. The power assembly 42 drives the connector 41 to rotate, thereby driving the wafer stage 3 to rotate, and finally driving the wafer to rotate, maintaining the uniformity of the reaction.

[0075] In this embodiment, as Figures 1 to 6 As shown, the metal chemical vapor deposition apparatus also includes a heating structure 6; the heating structure 6 is fixedly disposed on the side away from the reaction chamber, and the heating end of the heating structure 6 is disposed opposite to the wafer stage 3. The heating structure 6 is used to provide heat to the wafer stage 3.

[0076] The metal chemical vapor deposition apparatus in this structure also includes a heating structure 6, which is fixedly located on the side away from the reaction chamber and at the center of the connector 41. The heating end of the heating structure 6 is a heating wire, which is positioned opposite to the wafer stage 3. The heating structure 6 generates heat to provide heat to the wafer stage 3. Since the heating structure 6 does not move, the wafer stage 3 rotates to ensure the uniformity of the wafer surface temperature.

[0077] In this embodiment, as Figures 1 to 6 As shown, the heating end of the heating structure 6 is set as a heating wire; several wafer carriers 3 are provided; the metal chemical vapor deposition apparatus also includes an isolation plate, which is set in the reaction chamber and between two adjacent wafer carriers to prevent temperature transfer between two adjacent wafer carriers.

[0078] In this structure, there are several wafer carriers 3. An isolation plate is set between each pair of adjacent wafer carriers 3. The isolation plate is detachably or fixedly set in the reaction chamber. Since each wafer rotates, the temperature uniformity of a single wafer will be affected by the sidewalls of the wafer. Therefore, the wafers are isolated from each other. The heating end of the heating structure 6 is set as a heating wire, which can adjust the temperature of the edge and the middle of the wafer, thereby improving the overall temperature uniformity of the wafer.

[0079] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A metal chemical vapor deposition apparatus, characterized in that, The metal chemical vapor deposition apparatus includes several MOVCD reaction modules, which are arranged in a linear array. The MOVCD reaction module includes: Base (1); The reaction shell (2) is disposed at the top of the base (1). The reaction shell (2) and the base (1) form a reaction chamber. The opposite sides of the reaction shell (2) are respectively provided with an air inlet and an air outlet for the gas to be reacted to enter and exit the reaction chamber. The wafer stage (3) has a cavity in the base (1), and the cavity is connected to the reaction cavity through a through hole. The wafer stage (3) is located on the side of the cavity near the reaction cavity. The wafer stage (3) is used to support the wafer. The MOVCD reaction module further includes a rotating structure (4), which is connected to the wafer stage (3) and is adapted to drive the wafer stage (3) to rotate the wafer when heating the wafer, so as to achieve uniform heating of the wafer. The metal chemical vapor deposition apparatus further includes a gas delivery structure (5), which comprises: An air intake assembly (51) is provided with a plurality of air intake channels (512). One end of the air intake channel (512) near the base (1) is corresponding to and connected to the air inlet, and the other end is adapted to be connected to the air intake device so that the gas to be reacted flows from the air intake device through the air intake channel (512) and the air inlet into the reaction chamber. The gas outlet assembly (52) has several gas outlet channels (522) on it. One end of the gas outlet channel (522) is corresponding to the gas outlet, and the other end of the gas outlet channel (522) is adapted to communicate with the outside to discharge the gas inside the reaction chamber.

2. The metal chemical vapor deposition apparatus according to claim 1, characterized in that, The air intake assembly (51) includes a plurality of air intake plates (511); Several air intakes (511) are stacked one on top of the other. And / or, each air intake plate (511) is provided with a plurality of air intake channels (512) spaced apart along the length direction, and the reaction gas introduced into each air intake plate (511) is different.

3. The metal chemical vapor deposition apparatus according to claim 2, characterized in that, The air intake assembly (51) includes 1-7 layers of air intake plates (511).

4. The metal chemical vapor deposition apparatus according to claim 1, characterized in that, The air outlet assembly (52) includes: The main body of the gas outlet assembly (521) is a plate-shaped or block-shaped structure disposed on the gas outlet side of the base (1) near the reaction shell (2); The first gas outlet channel (5221) is opened on the side of the gas outlet assembly body (521) near the reaction shell (2). There are several first gas outlet channels (5221). Each first gas outlet channel (5221) corresponds to and is connected to the gas outlet. The second gas outlet channel (5222) is located on the side of the gas outlet assembly body (521) away from the reaction shell (2) and connects the first gas outlet channel (5221) with the outside. The gas outlet ends of several first gas outlet channels (5221) are connected to the gas inlet end of the second gas outlet channel (5222) so that the gas discharged from the reaction chamber is merged into the second gas outlet channel (5222) through several first gas outlet channels (5221) and then discharged.

5. The metal chemical vapor deposition apparatus according to claim 4, characterized in that, The second gas outlet channel (5222) is provided, and the side of the second gas outlet channel (5222) near the reaction shell (2) is connected to the first gas outlet channel (5221).

6. The metal chemical vapor deposition apparatus according to claim 5, characterized in that, The inner diameter of the second air outlet channel (5222) is larger than the inner diameter of the first air outlet channel (5221).

7. The metal chemical vapor deposition apparatus according to any one of claims 1-6, characterized in that, The rotating structure (4) includes: Connector (41), the connector (41) is disposed on the side of the wafer stage (3) away from the reaction chamber; The power assembly (42) is located on the side of the connector (41) away from the wafer stage (3). The power output end of the power assembly (42) is connected to the connector (41). The power assembly (42) is used to drive the wafer stage (3) to rotate through the connector (41).

8. The metal chemical vapor deposition apparatus according to claim 7, characterized in that, The metal chemical vapor deposition apparatus also includes a heating structure (6). The heating structure (6) is fixedly disposed on the side of the accommodating cavity away from the reaction cavity. The heating end of the heating structure (6) is disposed opposite to the wafer stage (3). The heating structure (6) is used to provide heat to the wafer stage (3).

9. The metal chemical vapor deposition apparatus according to claim 8, characterized in that, The heating end of the heating structure (6) is configured as a heating wire; The wafer stage (3) is provided in several places. The metal chemical vapor deposition apparatus also includes an isolation plate. The isolation plate is disposed in the reaction chamber and is disposed between two adjacent wafer disks to prevent temperature transfer between two adjacent wafer disks.

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