Method and apparatus for determining outgassing characteristics of materials inside a wafer-level vacuum-packaged device

Abstract

The application relates to a method and device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaged devices. The method comprises: obtaining a target pressure; wherein the target pressure is the internal pressure of a test sample, and the test sample is a wafer-level vacuum packaged micro-electro-mechanical system (MEMS) device; under the condition that the test sample is placed in a test device and the internal pressure of the test device is the target pressure, the target characteristic parameters of the test sample at various test temperatures are obtained by adjusting the temperature of the test device; and the outgassing characteristics of the internal materials of the test sample are determined according to the target characteristic parameters of the test sample at various test temperatures. The method can accurately determine the outgassing characteristics of the internal materials of wafer-level vacuum packaged devices.

Description

Technical Field

[0001] This application relates to the field of microelectromechanical systems (MEMS) packaging technology, and in particular to a method and apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices. Background Technology

[0002] With the development of micro-electro-mechanical systems (MEMS) packaging technology, wafer-level vacuum packaging for MEMS has emerged. After MEMS vacuum packaging, the stability of the gas pressure inside the packaging cavity has a significant impact on the performance and reliability of MEMS devices.

[0003] Changes in internal pressure within the packaging cavity primarily arise from the outgassing of the internal materials, but may also originate from the infiltration and leakage of external gases. Specifically, high-temperature stress can cause outgassing of the internal materials of a MEMS wafer-level vacuum packaging cavity; infiltration is mainly determined by the cavity wall material, while leakage primarily originates from the bonding interface of the vacuum packaging. In practice, the bonding interface may contain microchannels or defects. Due to the low pressure within the wafer-level vacuum packaging cavity, external gases may flow into the cavity through these microchannels or defects.

[0004] Therefore, it is crucial to accurately analyze the outgassing characteristics of internal materials in wafer-level vacuum packaging devices and to eliminate or mitigate the effects of external gas infiltration and leakage. Summary of the Invention

[0005] Therefore, it is necessary to provide a method and apparatus for determining the outgassing characteristics of the internal material of a wafer-level vacuum packaging device to address the above-mentioned technical problems. This method and apparatus can accurately determine the outgassing characteristics of the internal material of the vacuum packaging device cavity while eliminating or mitigating the effects of external gas infiltration and leakage.

[0006] In a first aspect, this application provides a method for determining the outgassing characteristics of internal materials of wafer-level vacuum-packaged devices, including:

[0007] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0008] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0009] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0010] In one embodiment, obtaining the target air pressure includes:

[0011] With the perforated sample placed in the test equipment, the temperature in the test equipment is adjusted to the standard temperature. The perforated sample is obtained by drilling a hole in the calibration sample. The calibration sample is a device located adjacent to the test sample on the same wafer and with similar characteristic parameters. After the temperature in the test equipment is stabilized at the standard temperature, the gas pressure in the test equipment is adjusted, and the characteristic parameters of the perforated sample are detected. When the characteristic parameters of the perforated sample are detected to be the standard characteristic parameters, the gas pressure in the test equipment is taken as the target gas pressure.

[0012] In one embodiment, the standard characteristic parameters are the characteristic parameters of the test sample at a standard temperature.

[0013] In one embodiment, obtaining the target air pressure includes:

[0014] The ambient air pressure at which the test sample was obtained through vacuum bonding was acquired, and the acquired ambient air pressure was used as the target air pressure.

[0015] In one embodiment, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment, including:

[0016] For each test temperature, the temperature in the test equipment is adjusted to that test temperature; when the temperature of the test equipment is stable at that test temperature, the characteristic parameters of the test sample are tested at least twice to obtain at least two sets of characteristic parameters of the test sample at that test temperature; based on the at least two sets of characteristic parameters of the test sample at that test temperature, the target characteristic parameters of the test sample at that test temperature are determined.

[0017] In one embodiment, the outgassing characteristics of the internal material of the test sample are determined based on the target characteristic parameters of the test sample at various test temperatures, including:

[0018] Based on the target characteristic parameters of the test sample at each test temperature, a relationship curve between temperature and characteristic parameters is constructed; based on the relationship curve, the gas release characteristics of the internal material of the test sample are determined.

[0019] Secondly, this application also provides a device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, comprising:

[0020] The air pressure acquisition module is used to acquire the target air pressure; wherein, the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0021] The parameter acquisition module is used to acquire the target characteristic parameters of the test sample at each test temperature by adjusting the temperature in the test equipment when the test sample is placed in the test equipment and the air pressure in the test equipment is the target air pressure.

[0022] The characteristic determination module is used to determine the gas release characteristics of the internal materials of the test sample based on the target characteristic parameters of the test sample at each test temperature.

[0023] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0024] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0025] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0026] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0027] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0028] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0029] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0030] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0031] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0032] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0033] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0034] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0035] The aforementioned method and apparatus for determining the outgassing characteristics of the internal material of a wafer-level vacuum-packaged device adjusts the gas pressure in the test equipment to the internal gas pressure (i.e., the target gas pressure) of the test sample (i.e., the wafer-level vacuum-packaged microelectromechanical system MEMS device) before testing, ensuring that the pressure difference between the inside and outside of the test sample cavity is equal to or close to zero. Under this condition, characteristic parameters of the test sample are obtained at various test temperatures to determine the outgassing characteristics of the internal material of the test sample. Because the gas pressure in the test equipment is adjusted to the internal gas pressure of the test sample before testing, this method reduces or eliminates the infiltration and leakage of external gas into the test sample cavity caused by pressure differences, thereby making the determination of the outgassing characteristics of the internal material of the wafer-level vacuum-packaged device more accurate. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a flowchart illustrating a method for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0038] Figure 2 This is a schematic diagram of a process for obtaining target air pressure provided in an embodiment of this application;

[0039] Figure 3 This is a schematic diagram of a process for obtaining target characteristic parameters of a test sample at various test temperatures, provided in an embodiment of this application.

[0040] Figure 4 This is a schematic diagram of a process for determining the outgassing characteristics of the internal material of a test sample, provided in an embodiment of this application.

[0041] Figure 5 This is a flowchart illustrating another method for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0042] Figure 6 This is a structural block diagram of a device for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0043] Figure 7 This is an internal structural diagram of a computer device provided in an embodiment of this application. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0045] Wafer-level packaging is an advanced packaging technology that has seen rapid development in recent years due to its advantages such as small size, excellent electrical performance, good heat dissipation, and low cost. After wafer-level vacuum packaging of MEMS devices, the performance and reliability of the device are related to the stability of the internal gas pressure of the packaging cavity. Outgassing of the internal materials, infiltration of external gases, and leakage can all cause changes in the internal gas pressure of the packaging cavity. In particular, high-temperature stress can cause outgassing of the internal materials of the MEMS wafer-level vacuum packaging cavity.

[0046] Therefore, in order to stabilize the performance of MEMS devices and accurately obtain the outgassing characteristics of the internal materials of MEMS vacuum packaging cavity under high temperature stress, measures need to be taken to reduce or eliminate the potential impact of external gas infiltration and leakage on the internal gas pressure of the vacuum packaging cavity.

[0047] Based on this, in order to more accurately test the gas release characteristics of the internal material after vacuum packaging, this application provides a method for determining the gas release characteristics of the internal material of a wafer-level vacuum-packaged device, which can be applied to computer equipment, such as a server or a terminal with powerful computing capabilities.

[0048] Figure 1 This is a flowchart illustrating a method for determining the outgassing characteristics of internal materials in a wafer-level vacuum packaging device, as provided in this application embodiment. The method is explained using an example of it being executed by a server. Figure 1 As shown, the method for determining the outgassing characteristics of the internal material of this wafer-level vacuum packaging device includes the following steps S101 to S103. Wherein:

[0049] S101, Obtain the target air pressure.

[0050] The target pressure is the internal pressure of the test sample, which is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging.

[0051] For example, when it is necessary to test the outgassing characteristics of the internal material of a test sample, the internal gas pressure of the test sample can be directly obtained and used as the target gas pressure.

[0052] S102, with the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0053] The testing equipment is adjustable in both temperature and pressure. Characteristic parameters are those that characterize the outgassing properties of the internal materials of wafer-level vacuum-packaged devices. Optionally, characteristic parameters may include, but are not limited to, quality factor and resonant frequency.

[0054] For example, a test circuit board containing the test sample is fixed in the test equipment, and the electrical leads of the test circuit board are connected and led out to the outside of the test equipment to connect to an external power supply and related test instruments. The air pressure in the test equipment is adjusted to the target air pressure and kept constant, and then the target characteristic parameters of the test sample at various test temperatures are obtained by controlling the test instruments.

[0055] For example, there are n test temperatures, namely T1, T2, ..., Tn. n The relationship between the test temperatures is T1 <T1<…<T n In this embodiment, the temperature of the testing equipment can be adjusted sequentially in ascending order. During the test, for each test temperature, the test sample is tested using a testing instrument to determine the target characteristic parameters of the test sample at that test temperature. After all test temperatures are tested, n sets of target characteristic parameters are obtained.

[0056] It should be noted that adjusting the air pressure in the test equipment to the target air pressure ensures that the internal air pressure of the test sample before the test starts is close to or equal to the external air pressure of the test sample (i.e., the ambient air pressure, the air pressure in the test equipment), thereby eliminating or reducing the impact of gas leakage caused by the pressure difference between the inside and outside of the test sample cavity on the internal air pressure of the test sample.

[0057] S103, based on the target characteristic parameters of the test sample at each test temperature, determine the gas release characteristics of the internal material of the test sample.

[0058] For example, after obtaining the target characteristic parameters of the test sample at each test temperature, the outgassing characteristics of the internal material of the test sample are determined by analyzing the relationship between the target characteristic parameters and the temperature.

[0059] The aforementioned method for determining the outgassing characteristics of the internal material of a wafer-level vacuum-packaged device involves adjusting the gas pressure in the test equipment to the internal gas pressure (i.e., the target gas pressure) of the test sample (i.e., the wafer-level vacuum-packaged microelectromechanical system MEMS device) before testing. This ensures that the pressure difference between the inside and outside of the test sample cavity is equal to or close to zero. Under these conditions, characteristic parameters of the test sample are obtained at various test temperatures to determine the outgassing characteristics of the internal material of the test sample. Because this method adjusts the gas pressure in the test equipment to the internal gas pressure of the test sample before testing, it can reduce or eliminate the infiltration and leakage of external gas into the test sample cavity caused by pressure differences, thereby making the determination of the outgassing characteristics of the internal material of the wafer-level vacuum-packaged device more accurate.

[0060] Optionally, there are various ways to obtain the target gas pressure, and this application embodiment does not limit this. For example, one way is to obtain the ambient gas pressure when the test sample is obtained through vacuum bonding operation, and use the obtained ambient gas pressure as the target gas pressure. It should be noted that the ambient gas pressure during vacuum bonding is the gas pressure inside the test sample.

[0061] Another approach is to use a calibration sample identical to the test sample to determine the target pressure. For example... Figure 2 As shown in the embodiments of this application, an optional method for obtaining target air pressure is also provided, including the following S201 to S203. Wherein:

[0062] S201, with the perforated sample placed in the test equipment, adjust the temperature in the test equipment to the standard temperature.

[0063] Among them, the hole sample is obtained by drilling holes in the calibration sample. The calibration sample is a device that is adjacent to the test sample on the same wafer and has similar characteristic parameters.

[0064] For example, the perforated sample is obtained by drilling holes in the calibration sample using FIB (focused-ion-beam) or laser etching methods. It should be noted that the drilling location on the calibration sample should avoid stress concentration areas of the entire package structure, as well as the device area inside the cavity, and the aperture should be minimized as much as possible.

[0065] The standard temperature is a temperature set to standardize the measurement conditions of the test; optionally, in the embodiments of this application, the standard temperature can be room temperature (i.e., 25°C).

[0066] For example, a temperature adjustment command including a standard temperature is issued to the test equipment so that the test equipment adjusts its temperature to the standard temperature.

[0067] S202, with the temperature in the test equipment stable at the standard temperature, the air pressure in the test equipment is adjusted, and the characteristic parameters of the open sample are detected.

[0068] For example, after the temperature of the test equipment stabilizes at the standard temperature, the air pressure of the test equipment is continuously adjusted; for each air pressure adjustment, after the air pressure of the test equipment stabilizes, the test instrument is controlled to test the characteristic parameters of the open sample under that air pressure.

[0069] S203, when the characteristic parameters of the detected open sample are taken as standard characteristic parameters, the air pressure in the test equipment is taken as the target air pressure.

[0070] The standard characteristic parameters are the characteristic parameters of the test sample at a standard temperature. For example, the test sample is placed on a test circuit board, and the electrical leads of the test circuit board are connected to an external power supply and related testing instruments. At the standard temperature, the characteristic parameters of the test sample are tested by controlling the testing instruments, and finally the standard characteristic parameters of the test sample at the standard temperature are obtained.

[0071] For example, when the air pressure in the test equipment is adjusted to P1, if the characteristic parameters of the open sample measured according to the average time interval are the same as the standard characteristic parameters, then the air pressure P1 of the test equipment at this time is set as the target air pressure.

[0072] It should be noted that after the sample is drilled, the internal air pressure of the sample cavity is the same as the external air pressure (i.e., the ambient air pressure, the air pressure in the test equipment). The drilled sample and the test sample are devices located adjacent to each other on the same wafer and have similar characteristic parameters. Therefore, the only difference between the drilled sample and the test sample is the drilled hole. Thus, at the standard temperature, when the characteristic parameters of the drilled sample are the standard characteristic parameters, the state of the drilled sample can be regarded as the same as the state of the test sample when the characteristic parameters of the test sample are the standard characteristic parameters at the standard temperature. That is, the air pressure in the test equipment where the drilled sample is located is the same as the internal air pressure of the test sample. Therefore, the air pressure in the test equipment when the characteristic parameters of the drilled sample are the standard characteristic parameters can be used as the target air pressure (i.e., the internal air pressure of the test sample).

[0073] In this embodiment, by introducing a calibration sample that is adjacent to the test sample on the same wafer and has similar characteristic parameters, and by introducing standard characteristic parameters and using the standard characteristic parameters as a reference to adjust the air pressure of the test equipment, the determined target air pressure can be made more reasonable and accurate.

[0074] In one exemplary embodiment, such as Figure 3 As shown, by adjusting the temperature in the testing equipment, the target characteristic parameters of the test sample at each test temperature are obtained, including the following S301 to S302. Wherein:

[0075] S301, for each test temperature, adjust the temperature in the test equipment to that test temperature.

[0076] For example, for each test temperature, a temperature adjustment command including that test temperature can be issued to the test equipment so that the test equipment adjusts its temperature to that test temperature.

[0077] S302, with the temperature of the test equipment stable at the test temperature, the characteristic parameters of the test sample are tested at least twice to obtain at least two sets of characteristic parameters of the test sample at the test temperature.

[0078] Taking test temperature T1 as an example, after the temperature of the test equipment stabilizes at the test temperature T1, the temperature of the test equipment is kept constant at T1 for a holding time of Δh (generally, 0h < Δh ≤ 24h). During the temperature holding period, the test sample is tested multiple times using the testing instrument to obtain the characteristic parameters of the test sample at the test temperature T1. For example, if the test sample is tested 3 times during the temperature holding period, the characteristic parameters of the test sample are tested according to the average time interval (time interval = holding time / n, where n is the number of tests), and finally, 3 sets of characteristic parameters of the test sample at the test temperature T1 are obtained.

[0079] S303, based on at least two sets of characteristic parameters of the test sample at the test temperature, determine the target characteristic parameters of the test sample at the test temperature.

[0080] Let's take test temperature T1 as an example. At test temperature T1, the test sample is tested 3 times at an average time interval, resulting in 3 sets of characteristic parameters. For example, there are 3 quality factors among the characteristic parameters. The median value of the 3 quality factors can be selected as the target quality factor of the test sample at test temperature T1, or the maximum (or minimum) value of the 3 quality factors can be selected as the target quality factor of the test sample at test temperature T1.

[0081] To ensure the accuracy of the test, the target characteristic parameters can be determined by taking the average value. For example, the average value of the three quality factors of the test sample at the test temperature T1 can be taken as the target quality factor of the test sample at the test temperature T1.

[0082] In this embodiment, by conducting multiple tests on the test sample, the accuracy of the target characteristic parameters is improved, thereby making the determination of the gas release characteristics of the internal material of the vacuum-sealed device more accurate.

[0083] In one exemplary embodiment, such as Figure 4As shown, based on the target characteristic parameters of the test sample at each test temperature, the outgassing characteristics of the internal material of the test sample are determined, including the following S401 to S402. Wherein:

[0084] S401, construct the relationship curve between temperature and characteristic parameters based on the target characteristic parameters of the test sample at each test temperature.

[0085] For example, based on the target characteristic parameters of the test sample at each test temperature, multiple sets of correspondences between temperature and target characteristic parameters can be obtained, and then a relationship curve with temperature as the horizontal axis and target characteristic parameters as the vertical axis can be obtained.

[0086] S402, based on the relationship curve, determine the gas release characteristics of the internal material of the test sample.

[0087] For example, based on the relationship curve, the relationship between the target characteristic parameter and temperature can be analyzed. For instance, function fitting can be performed to obtain a function of the target characteristic parameter and temperature, and the fitted function can be used as the target function of the target characteristic parameter and temperature. Finally, the outgassing characteristics of the internal material of the test sample can be determined through analysis.

[0088] In this embodiment, by constructing a relationship curve between temperature and characteristic parameters, the intrinsic connection between the data is made more intuitive, and the trend of change between the data is made clearer, thereby facilitating the determination of the gas release characteristics of the internal materials of the test sample.

[0089] Based on the above embodiments, this embodiment provides an optional example of a method for determining the outgassing characteristics of internal materials in wafer-level vacuum packaging devices. For example... Figure 5 As shown, the specific implementation process is as follows:

[0090] S501, Obtain the standard characteristic parameters of the test sample at the standard temperature.

[0091] The test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device; the standard characteristic parameters are the characteristic parameters of the test sample at a standard temperature; the standard temperature refers to the temperature set to standardize the measurement conditions of the test; optionally, in this embodiment, the standard temperature can be room temperature (i.e., 25°C).

[0092] S502, with the perforated sample placed in the test equipment, adjust the temperature in the test equipment to the standard temperature.

[0093] Among them, the open sample is obtained by drilling holes in the calibration sample. The calibration sample is a device that is adjacent to the test sample on the same wafer and has similar characteristic parameters.

[0094] S503 involves adjusting the air pressure in the test equipment while maintaining the temperature at the standard temperature, and then detecting the characteristic parameters of the open sample.

[0095] S504, when the characteristic parameters of the detected open sample are taken as standard characteristic parameters, the air pressure in the test equipment is taken as the target air pressure.

[0096] The target air pressure is equal to or close to the air pressure inside the test sample.

[0097] S505, with the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the temperature in the test equipment is adjusted to each test temperature in sequence, and the target characteristic parameters of the test sample at each test temperature are obtained.

[0098] S506, based on the target characteristic parameters of the test sample at each test temperature, construct the relationship curve between temperature and characteristic parameters.

[0099] S507, based on the relationship curve, determine the gas release characteristics of the internal material of the test sample.

[0100] The specific processes of S501-S507 described above can be referred to the description of the above method embodiments. Their implementation principles and technical effects are similar, and will not be repeated here.

[0101] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0102] Based on the same inventive concept, this application also provides an apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, used to implement the method for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices described above. The solution provided by this apparatus is similar to the solution described in the above method. Therefore, the specific limitations of one or more embodiments of the apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices provided below can be found in the limitations of the characteristic determination method above, and will not be repeated here.

[0103] In one exemplary embodiment, such as Figure 6 As shown, a device 1 for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device is provided, comprising: a pressure acquisition module 10, a parameter acquisition module 20, and a characteristic determination module 30, wherein:

[0104] The air pressure acquisition module 10 is used to acquire the target air pressure; wherein, the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging.

[0105] The parameter acquisition module 20 is used to acquire the target characteristic parameters of the test sample at each test temperature by adjusting the temperature in the test equipment when the test sample is placed in the test equipment and the air pressure in the test equipment is the target air pressure.

[0106] The characteristic determination module 30 is used to determine the gas release characteristics of the internal material of the test sample based on the target characteristic parameters of the test sample at each test temperature.

[0107] In one embodiment, the air pressure acquisition module 10 is specifically used for:

[0108] With the perforated sample placed in the test equipment, the temperature in the test equipment is adjusted to the standard temperature. The perforated sample is obtained by drilling a hole in the calibration sample. The calibration sample is a device located adjacent to the test sample on the same wafer and with similar characteristic parameters. After the temperature in the test equipment is stabilized at the standard temperature, the gas pressure in the test equipment is adjusted, and the characteristic parameters of the perforated sample are detected. When the characteristic parameters of the perforated sample are detected to be the standard characteristic parameters, the gas pressure in the test equipment is taken as the target gas pressure.

[0109] In one embodiment, the standard characteristic parameter is the characteristic parameter of the test sample at a standard temperature.

[0110] In one embodiment, the air pressure acquisition module 10 is further configured to:

[0111] The ambient air pressure at which the test sample was obtained through vacuum bonding was acquired, and the acquired ambient air pressure was used as the target air pressure.

[0112] In one embodiment, the parameter acquisition module 20 is specifically used for:

[0113] For each test temperature, the temperature in the test equipment is adjusted to that test temperature; when the temperature of the test equipment is stable at that test temperature, the characteristic parameters of the test sample are tested at least twice to obtain at least two sets of characteristic parameters of the test sample at that test temperature; based on the at least two sets of characteristic parameters of the test sample at that test temperature, the target characteristic parameters of the test sample at that test temperature are determined.

[0114] In one embodiment, the characteristic determination module 30 is specifically used for:

[0115] Based on the target characteristic parameters of the test sample at each test temperature, a relationship curve between temperature and characteristic parameters is constructed; based on the relationship curve, the gas release characteristics of the internal material of the test sample are determined.

[0116] The various modules in the aforementioned device for determining the outgassing characteristics of the internal material of a wafer-level vacuum-sealed device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0117] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 7 As shown, the computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operation of the operating system and computer programs in the non-volatile storage media. The database stores experimental data. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communication with external terminals via a network connection. When executed by the processor, the computer program implements a method for determining the outgassing characteristics of the internal material of a wafer-level vacuum-sealed device.

[0118] Those skilled in the art will understand that Figure 7 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0119] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0120] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0121] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0122] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0123] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0124] With the perforated sample placed in the test equipment, the temperature in the test equipment is adjusted to the standard temperature. The perforated sample is obtained by drilling a hole in the calibration sample. The calibration sample is a device located adjacent to the test sample on the same wafer and with similar characteristic parameters. After the temperature in the test equipment is stabilized at the standard temperature, the gas pressure in the test equipment is adjusted, and the characteristic parameters of the perforated sample are detected. When the characteristic parameters of the perforated sample are detected to be the standard characteristic parameters, the gas pressure in the test equipment is taken as the target gas pressure.

[0125] In one embodiment, the standard characteristic parameter is the characteristic parameter of the test sample at a standard temperature.

[0126] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0127] The ambient pressure at which the test sample was obtained through vacuum bonding was acquired, and the acquired ambient pressure was used as the target pressure.

[0128] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0129] For each test temperature, the temperature in the test equipment is adjusted to that test temperature; when the temperature of the test equipment is stable at that test temperature, the characteristic parameters of the test sample are tested at least twice to obtain at least two sets of characteristic parameters of the test sample at that test temperature; based on the at least two sets of characteristic parameters of the test sample at that test temperature, the target characteristic parameters of the test sample at that test temperature are determined.

[0130] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0131] Based on the target characteristic parameters of the test sample at each test temperature, a relationship curve between temperature and characteristic parameters is constructed; based on the relationship curve, the gas release characteristics of the internal material of the test sample are determined.

[0132] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0133] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0134] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0135] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0136] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0137] With the perforated sample placed in the test equipment, the temperature in the test equipment is adjusted to the standard temperature. The perforated sample is obtained by drilling a hole in the calibration sample. The calibration sample is a device located adjacent to the test sample on the same wafer and with similar characteristic parameters. After the temperature in the test equipment is stabilized at the standard temperature, the gas pressure in the test equipment is adjusted, and the characteristic parameters of the perforated sample are detected. When the characteristic parameters of the perforated sample are detected to be the standard characteristic parameters, the gas pressure in the test equipment is taken as the target gas pressure.

[0138] In one embodiment, the standard characteristic parameter is the characteristic parameter of the test sample at a standard temperature.

[0139] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0140] The ambient pressure at which the test sample was obtained through vacuum bonding was acquired, and the acquired ambient pressure was used as the target pressure.

[0141] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0142] For each test temperature, the temperature in the test equipment is adjusted to that test temperature; when the temperature of the test equipment is stable at that test temperature, the characteristic parameters of the test sample are tested at least twice to obtain at least two sets of characteristic parameters of the test sample at that test temperature; based on the at least two sets of characteristic parameters of the test sample at that test temperature, the target characteristic parameters of the test sample at that test temperature are determined.

[0143] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0144] Based on the target characteristic parameters of the test sample at each test temperature, a relationship curve between temperature and characteristic parameters is constructed; based on the relationship curve, the gas release characteristics of the internal material of the test sample are determined.

[0145] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0146] Obtain the target air pressure; where the target air pressure is the air pressure inside the test sample, and the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging;

[0147] With the test sample placed in the test equipment and the air pressure in the test equipment set to the target air pressure, the target characteristic parameters of the test sample at each test temperature are obtained by adjusting the temperature in the test equipment.

[0148] Based on the target characteristic parameters of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0149] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0150] With the perforated sample placed in the test equipment, the temperature in the test equipment is adjusted to the standard temperature. The perforated sample is obtained by drilling a hole in the calibration sample. The calibration sample is a device located adjacent to the test sample on the same wafer and with similar characteristic parameters. After the temperature in the test equipment is stabilized at the standard temperature, the gas pressure in the test equipment is adjusted, and the characteristic parameters of the perforated sample are detected. When the characteristic parameters of the perforated sample are detected to be the standard characteristic parameters, the gas pressure in the test equipment is taken as the target gas pressure.

[0151] In one embodiment, the standard characteristic parameter is the characteristic parameter of the test sample at a standard temperature.

[0152] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0153] The ambient pressure at which the test sample was obtained through vacuum bonding was acquired, and the acquired ambient pressure was used as the target pressure.

[0154] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0155] For each test temperature, the temperature in the test equipment is adjusted to that test temperature; when the temperature of the test equipment is stable at that test temperature, the characteristic parameters of the test sample are tested at least twice to obtain at least two sets of characteristic parameters of the test sample at that test temperature; based on the at least two sets of characteristic parameters of the test sample at that test temperature, the target characteristic parameters of the test sample at that test temperature are determined.

[0156] In one embodiment, when the computer program is executed by a processor, it further performs the following steps:

[0157] Based on the target characteristic parameters of the test sample at each test temperature, a relationship curve between temperature and characteristic parameters is constructed; based on the relationship curve, the gas release characteristics of the internal material of the test sample are determined.

[0158] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0159] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0160] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for determining the outgassing characteristics of internal materials in a wafer-level vacuum-packaged device, characterized in that, The method comprises: adjusting a temperature in a test device to a standard temperature, wherein the test device is placed with a punched sample, the punched sample is obtained by punching a calibration sample, the calibration sample is a device with similar feature parameters to a test sample and located adjacent to the test sample on a same wafer, and the test sample is a wafer-level vacuum packaged micro-electro-mechanical system (MEMS) device; adjusting a gas pressure in the test device and detecting a feature parameter of the punched sample, when the temperature in the test device is stabilized at the standard temperature; when the feature parameter of the punched sample is detected as a standard feature parameter, the gas pressure in the test device is taken as a target gas pressure, wherein the target gas pressure is an internal gas pressure of the test sample, and the standard feature parameter is a feature parameter of the test sample at the standard temperature; adjusting the temperature in the test device to obtain a target feature parameter of the test sample at each test temperature, when the test sample is placed in the test device and the gas pressure in the test device is the target gas pressure; determining a gas release characteristic of an internal material of the test sample according to the target feature parameter of the test sample at each test temperature.

2. The method of claim 1, wherein, The adjusting the temperature in the test device to obtain the target feature parameter of the test sample at each test temperature comprises: adjusting the temperature in the test device to each test temperature; performing at least two tests on the feature parameter of the test sample to obtain at least two groups of feature parameters of the test sample at the test temperature, when the temperature in the test device is stabilized at the test temperature; determining the target feature parameter of the test sample at the test temperature according to the at least two groups of feature parameters of the test sample at the test temperature.

3. The method of claim 1, wherein, The determining the gas release characteristic of the internal material of the test sample according to the target feature parameter of the test sample at each test temperature comprises: constructing a relationship curve between temperature and feature parameter according to the target feature parameter of the test sample at each test temperature; determining the gas release characteristic of the internal material of the test sample according to the relationship curve.

4. The method of claim 1, wherein, The feature parameter comprises a quality factor and a resonance frequency.

5. The method of claim 1, wherein, The punched sample is obtained by punching the calibration sample by a focused ion beam (FIB) or laser etching method.

6. The method of claim 1, wherein, The standard temperature is 25°C.

7. A wafer level vacuum packaged device internal material outgassing property determination apparatus, characterized by, The device comprises: The air pressure acquisition module is configured to adjust a temperature in the test device to a standard temperature when the open-hole sample is placed in the test device; adjust an air pressure in the test device and detect a characteristic parameter of the open-hole sample when the temperature in the test device is stabilized at the standard temperature; and take the air pressure in the test device as a target air pressure when the characteristic parameter of the open-hole sample is detected as a standard characteristic parameter; wherein the open-hole sample is obtained by punching a calibration sample, the calibration sample is a device with similar characteristic parameters and adjacent to a test sample on a same wafer, the test sample is a micro-electro-mechanical system (MEMS) device in a wafer-level vacuum package, the target air pressure is an air pressure inside the test sample, and the standard characteristic parameter is a characteristic parameter of the test sample at the standard temperature. The parameter acquisition module is configured to acquire a target characteristic parameter of the test sample at each test temperature by adjusting a temperature in the test device when the test sample is placed in the test device and the air pressure in the test device is the target air pressure. The characteristic determination module is configured to determine outgassing characteristics of an internal material of the test sample according to the target characteristic parameter of the test sample at each test temperature.

8. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 6.

9. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 6.

10. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 6.

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