Semiconductor package and data transmission method of semiconductor package

Abstract

An embodiment of the present invention relates to the semiconductor field and provides a semiconductor package and a data transmission method for a semiconductor package. The semiconductor package includes: a photonic integrated circuit chip; a plurality of memory chips; a first chip electrically connected to the photonic integrated circuit chip, thereby transmitting data with the photonic integrated circuit through electrical signals; and the first chip electrically connected to each of the plurality of memory chips, thereby transmitting data with each of the plurality of memory chips respectively through electrical signals.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and more particularly, to a semiconductor package and a data transmission method of the semiconductor package. Background Art

[0002] Memory is an important component in electronic devices or electronic systems. It usually relies on electrical connection lines to input / output electrical signals to transmit data. With the increase in computing requirements, the electrical connection lines restrict the high-speed transmission of data and also lead to increased power consumption. Summary of the Invention

[0003] Embodiments of the present invention provide a semiconductor package and a data transmission method for the semiconductor package.

[0004] An exemplary embodiment of the present invention provides a semiconductor package, comprising: a photonic integrated circuit chip; a plurality of memory chips; a first chip electrically connected to the photonic integrated circuit chip, thereby transmitting data with the photonic integrated circuit via electrical signals; and the first chip electrically connected to each of the plurality of memory chips, thereby transmitting data with each of the plurality of memory chips via electrical signals.

[0005] In some embodiments, the first chip is configured to convert a plurality of first electrical signals from the plurality of memory chips into a second electrical signal that is transmitted to the photonic integrated circuit chip, and a data transmission rate of the second electrical signal is greater than a data transmission rate of each of the plurality of first electrical signals.

[0006] In some embodiments, the first chip includes a parallel-to-serial conversion unit configured to perform parallel-to-serial conversion on data represented by a plurality of first electrical signals from the plurality of memory chips to generate the second electrical signal.

[0007] In some embodiments, the photonic integrated circuit chip is configured to convert the second electrical signal into a second optical signal.

[0008] In some embodiments, the photonic integrated circuit chip is configured to output the second optical signal.

[0009] In some embodiments, the photonic integrated circuit chip is configured to convert a first optical signal into a third electrical signal; the first chip is configured to convert one of the third electrical signals from the photonic integrated circuit chip into a plurality of fourth electrical signals transmitted to the plurality of memory chips, and a data transmission rate of the third electrical signal is greater than a data transmission rate of each of the plurality of fourth electrical signals.

[0010] In some embodiments, the first chip includes a serial-to-parallel conversion unit configured to perform serial-to-parallel conversion on the data represented by one of the third electrical signals from the photonic integrated circuit chip to generate a plurality of the fourth electrical signals.

[0011] In some embodiments, the plurality of memory chips are disposed around the photonic integrated circuit chip.

[0012] In some embodiments, the semiconductor package includes a substrate; the photonic integrated circuit chip, the plurality of memory chips, and the first chip are disposed on a same side of the substrate, and the photonic integrated circuit chip is disposed between the first chip and the substrate.

[0013] In some embodiments, the substrate includes a first conductive wiring structure, the photonic integrated circuit chip includes a second conductive wiring structure, and the electrical connection path from at least one of the multiple memory chips to the first chip includes a conductive path that passes through the first conductive wiring structure and the second conductive wiring structure in sequence to transmit at least one of the first electrical signals.

[0014] In some embodiments, the photonic integrated circuit chip includes a first surface and a second surface, the first surface and the second surface face the first chip and the substrate respectively, and the second conductive wiring structure extends between the first surface and the second surface of the photonic integrated circuit chip.

[0015] An exemplary embodiment of the present invention provides a data transmission method for a semiconductor package, wherein the semiconductor package includes: a photonic integrated circuit chip, multiple memory chips, and a first chip; the method includes: the first chip receiving multiple first electrical signals from the multiple memory chips; the first chip converting the multiple first electrical signals into a second electrical signal, wherein the data transmission rate of the second electrical signal is greater than the data transmission rate of each of the multiple first electrical signals; the photonic integrated circuit chip receiving the second electrical signal; and the photonic integrated circuit chip converting the second electrical signal into a second optical signal.

[0016] In some embodiments, the first chip performs parallel-to-serial conversion on data represented by a plurality of first electrical signals from the plurality of memory chips to generate the second electrical signal.

[0017] In some embodiments, the photonic integrated circuit chip outputs the second optical signal.

[0018] Through the embodiments of the present invention, electrical signals with lower data transmission rates input into / output from multiple memories can be processed and matched with higher optical signal transmission rates. Data can also be transmitted or output via optical signals. In addition, the overall electrical connection and package size of the semiconductor package are optimized.

[0019] Various aspects, features, advantages, etc. of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. According to the following detailed description in conjunction with the accompanying drawings, the above aspects, features, advantages, etc. of the present invention will become more clear. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A top view of a semiconductor package according to an exemplary embodiment of the present invention is shown;

[0021] Figure 2 shows a side view of a semiconductor package according to an exemplary embodiment of the present invention;

[0022] Figure 3 A schematic diagram of an exemplary photonic integrated circuit chip of the present invention is shown. DETAILED DESCRIPTION

[0023] In order to facilitate understanding of the various aspects, features and advantages of the technical solution of the present invention, the present invention is described in detail below with reference to the accompanying drawings. It should be understood that the various embodiments described below are only for illustration and are not intended to limit the scope of protection of the present invention.

[0024] The terms used in this disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. As used in this disclosure, the singular forms "one", "an" and "the" are intended to also include plural forms, unless the context clearly indicates otherwise. It will be further understood that the terms "include" and / or "comprise" specify the presence of the features, wholes, steps, operations, elements and / or parts when used in this specification, but do not exclude the presence of one or more other features, wholes, steps, operations, elements, parts and / or their groups or add one or more other features, wholes, steps, operations, elements, parts and / or their groups. As used in this disclosure, the term "and / or" includes any and all combinations of one or more of the associated listed items, and the phrase "at least one of A and B" refers to only A, only B, or both A and B. In the present disclosure, a chip may include a bare chip (die). In the present disclosure, the features of an embodiment may also be applied and appropriately incorporated as the features of other embodiments described in the present disclosure.

[0025] Memory is an important component in electronic devices or electronic systems. Memory typically relies on electrical connections to input / output electrical signals, thereby transmitting data. As computing demands increase, electrical connections restrict high-speed data transmission. A larger number of electrical connections also leads to increased power consumption.

[0026] The inventors recognize that in some scenarios, data can be transmitted via optical signals to replace certain electrical interconnections. However, the electrical signal data output by a single memory chip typically has a low transmission rate and cannot match the larger data bandwidth of optical interconnections. In addition, in some scenarios, data transmission is required for multiple memory chips, which requires a suitable packaging structure.

[0027] Figure 1 A top view of a semiconductor package according to an exemplary embodiment of the present invention is shown, which shows a semiconductor package including: a photonic integrated circuit chip 110; a plurality of memory chips 120; a first chip 130 electrically connected to the photonic integrated circuit chip 110, thereby transmitting data with the photonic integrated circuit chip 110 through electrical signals; and the first chip 130 electrically connected to each of the plurality of memory chips 120, thereby transmitting data with each of the plurality of memory chips 120 respectively through electrical signals.

[0028] exist Figure 1 , a substrate 150 is also shown. The substrate 150 may include a printed circuit board, an interposer, or other suitable semiconductor packaging substrate. Exemplarily, a plurality of memory chips 120 or some of them are disposed around the photonic integrated circuit chip 110 .

[0029] The semiconductor package 100 can convert the low-speed data transmitted by the plurality of memory chips 120 to adapt to high-speed optical data transmission. Figure 1 The semiconductor package 100 optimizes the overall electrical connectivity and package size of the semiconductor package 100 by configuring the layout and connection of the memory chip 120 and the photonic integrated circuit chip 110. The electrical signal transmission between the first chip 130 and the memory chip 120 can include at least one of the following methods: the first chip 130 sends data to the memory chip 120, and the first chip 130 receives data from the memory chip 120. Furthermore, multiple memory chips 120 can transmit data to and from the photonic integrated circuit chip 110 via the first chip 130. Other functions of the first chip 130 will be described later.

[0030] Figure 2A side view of a semiconductor package 100 is shown, wherein the semiconductor package 100 includes an optical fiber 170. The optical fiber 170 can be used to input light into or output light from the photonic integrated circuit chip 110. The photonic integrated circuit chip 110 can include an optical coupling structure 1113. The optical coupling structure 1113 can be used to optically couple with the optical fiber 170. The optical coupling structure 1113 can also be coupled to a waveguide in the photonic integrated circuit chip 110. The number of optical coupling structures 1113 and optical fibers 170 can be one or more. For example, eight optical coupling structures 1113 are connected to eight optical fibers 170, four of which are used to input optical signals and four of which are used to output optical signals. The optical fibers 170 can also be replaced with, for example, photonic leads or other off-chip waveguides for inputting or outputting light into or out of the photonic integrated circuit 110.

[0031] exist Figure 2 In the embodiment, the photonic integrated circuit chip 110 and the memory chip 120 are arranged on the substrate 150, and the first chip 130 is arranged on the photonic integrated circuit chip 110, so that the first chip 130 is indirectly arranged on the substrate 150. The semiconductor package 100 includes a first bonding layer 102, a second bonding layer 103, and a third bonding layer 104, wherein the first bonding layer 102 is used to electrically connect the photonic integrated circuit chip 110 to the substrate, the second bonding layer 103 is used to electrically connect the memory chip 120 to the substrate, and the third bonding layer 104 can electrically connect the first chip 130 to the photonic integrated circuit chip 110. Exemplarily, a plurality of memory chips 120 are arranged around the photonic integrated circuit chip 110, so that when the memory chips 120 are connected to the first conductive wiring structure of the photonic integrated circuit chip 110, there is an appropriate distance. In some embodiments, electrical connection can be made by wire bonding instead of the bonding layer.

[0032] Exemplarily, when the memory chip 120 is electrically connected to the first chip 130, the electrical connection path from the memory chip 120 to the first chip 130 includes a conductive path that passes through the first conductive wiring structure 1503 of the substrate 150 and the second conductive wiring structure 1115 of the photonic integrated circuit chip 110, so that electrical signals can be transmitted between the memory chip 120 and the first chip 130 for data transmission. As a result, the wiring resistance of the electrical connection can be reduced. Exemplarily, the conductive wiring structure 1115 of the photonic integrated circuit chip 110 extends on the first surface and the second surface of the photonic integrated circuit chip, wherein the first surface and the second surface face the first chip 130 and the substrate 150, respectively. Due to the presence of the second conductive wiring structure 1115 on the photonic integrated circuit chip 110, it provides a conductive connection channel, so that there can be multiple conductive channels from the memory chip 120 to the first chip 130, thereby transmitting multiple electrical signals.

[0033] The conductive wiring structure 1115 of the photonic integrated circuit chip 110 may include conductive vias, which may penetrate one or more semiconductor layers of the photonic integrated circuit chip 110. The conductive wiring structure 1115 may also include pads and other suitable conductive layers.

[0034] Figure 3 A side view of a photonic integrated circuit chip 110 in one embodiment is shown. The photonic integrated circuit chip 110 may include waveguides 1101a / 1101b, an electro-optical conversion unit 1118, and a photoelectric conversion unit 1119. The electro-optical conversion unit 1118 is coupled to the waveguide 1101a, and the photoelectric conversion unit 1119 is coupled to the waveguide 1101b. The electro-optical conversion unit 1118 may include a modulator that modulates at least one characteristic of light, such as phase and intensity, according to an electrical signal. The electro-optical conversion unit 1118 and the photoelectric conversion unit 1119 may be electrically connected to corresponding conductive ports through a conductive structure to receive or send an electrical signal. The electro-optical conversion unit 1118 is electrically connected to the conductive port 1114a through the conductive structure 1116a to receive an electrical signal for modulation. The electrical signal may come from the first chip ( Figure 3 (Not shown) The photoelectric conversion unit 1119 may convert an optical signal into an electrical signal. The photoelectric conversion unit 1119 may be electrically connected to the conductive port 1114b via the conductive structure 1116b to transmit the electrical signal.

[0035] The photonic integrated circuit chip 110 can be formed by bonding layers (e.g. Figure 2 The third bonding layer 104 in the embodiment is electrically connected to the first chip, and the bonding layer can be connected to the second conductive wiring structure 1115, the conductive ports 1114a / 1114b, and the conductive structures 1116a / 1116b.

[0036] First Chip

[0037] The first chip 130 can be electrically connected to the memory chip 120 via electrical signal transmission wiring, thereby communicating with the multiple memory chips 120, such as data transmission. As a result, the first chip 130 can receive data from the multiple memory chips 120 and send data to the multiple memory chips 120. The data transmission rate of the memory chips 120 using electrical signal communication is generally low. The low-rate data from the multiple memory chips 120 can be converted in the first chip 130, for example, by the parallel-to-serial conversion unit 131 in the first chip 130 (see Figure 1) performs parallel-to-serial conversion, converting the parallel data from the multiple memory chips 120 into serial data with a higher transmission rate. The serial data is transmitted to the photonic integrated circuit chip 110 as an electrical signal, and then undergoes electro-optical conversion in the photonic integrated circuit chip 110, converting it into an optical signal for transmission. The electro-optical conversion can be achieved by an electro-optical conversion unit in the photonic integrated circuit chip, for example, by a modulator.

[0038] The first chip 130 can also be used to receive the electrical signal from the photonic integrated circuit chip. The data represented by the electrical signal is converted in the first chip 130 through the serial-to-parallel conversion unit 132 (see Figure 1 ), converts the serial data represented by the electrical signals from the photonic integrated circuit into multiple electrical signals, which are then transmitted to the multiple memory chips 120 to achieve data transmission. In an exemplary embodiment, the data transmitted by the optical signals in the photonic integrated circuit is converted into electrical signals by the photoelectric conversion unit. The electrical signals are then transmitted to the first chip 130. The first chip 130 converts the serial data represented by the electrical signals from the photonic integrated circuit chip into multiple parallel data and transmits them to the multiple memory chips 120.

[0039]

Photonic integrated circuit chip

[0040] The photonic integrated circuit chip 110 may include photonic devices such as optical coupling structures, waveguides, optoelectronic conversion units, electro-optical conversion units, and light sources. The number of various photonic devices can be configured as needed and can be one or more. Exemplarily, the electro-optical conversion unit may include a modulator to convert electrical signals into optical signals. Exemplarily, the optical coupling structure may be used to optically couple with a laser or optical fiber to input or output optical signals into or from the photonic integrated circuit chip 110. For example, optical fiber may be used to input and output optical signals. The optical coupling structure may include a grating coupler, an end-face coupler, and the like. Exemplarily, a waveguide may be used to propagate optical signals and serve as a channel for information transmission. Exemplarily, the optoelectronic conversion unit may include a photodetector to convert optical signals into electrical signals. The photodetector may include, for example, a photodiode. Exemplarily, the photonic integrated circuit chip 110 includes a light source. The light generated by the light source may be coupled to the waveguide and modulated by the electrical signal.

[0041] Illustratively, the waveguide in the photonic integrated circuit chip 110 can input an initial optical signal that does not carry information through a first optical coupling structure, and after being modulated by an electrical signal, generate an optical signal that carries information. The optical signal that carries information can be output through a second optical coupling structure, for example, to an optical fiber.

[0042] Memory chips

[0043] The memory chip 120 may be a read-only memory (ROM), random access memory (RAM), dynamic random access memory (DRAM), etc. As needed, the memory may be arranged in different ways and / or may include different numbers, for example, 4, 6, 12, etc.

[0044] In some embodiments, the first chip 130 is configured to convert a plurality of first electrical signals from the plurality of memory chips 120 into a second electrical signal that is transmitted to the photonic integrated circuit chip, and a data transmission rate of the second electrical signal is greater than a data transmission rate of each of the plurality of first electrical signals.

[0045] In some embodiments, the first chip 130 includes a parallel-to-serial conversion unit configured to perform parallel-to-serial conversion on data represented by a plurality of first electrical signals from the plurality of memory chips 120 to generate the second electrical signal.

[0046] In some embodiments, the photonic integrated circuit chip 110 is configured to convert the second electrical signal into a second optical signal.

[0047] In some embodiments, the photonic integrated circuit chip 110 is configured to output the second optical signal, for example, through an optical coupling port.

[0048] In some embodiments, the photonic integrated circuit chip 110 is configured to convert the first optical signal into a third electrical signal; the first chip 130 is configured to convert one of the third electrical signals from the photonic integrated circuit chip 110 into a plurality of fourth electrical signals transmitted to the plurality of memory chips 120, and the data transmission rate of the third electrical signal is greater than the data transmission rate of each of the plurality of fourth electrical signals.

[0049] In some embodiments, the first chip 130 includes a serial-to-parallel conversion unit configured to perform serial-to-parallel conversion on the data represented by the third electrical signal from the photonic integrated circuit chip 110 to generate a plurality of the fourth electrical signals.

[0050] In some embodiments, the plurality of memory chips 120 are disposed around the photonic integrated circuit chip 110 .

[0051] In some embodiments, the semiconductor package includes a substrate; the photonic integrated circuit chip 110, the plurality of memory chips 120, and the first chip 130 are disposed on the same side of the substrate, and the photonic integrated circuit chip 110 is disposed between the first chip 130 and the substrate.

[0052] In some embodiments, the semiconductor package includes a substrate, the substrate includes a first conductive wiring structure, the photonic integrated circuit chip 110 includes a second conductive wiring structure, and the electrical connection path from at least one of the multiple memory chips 120 to the first chip 130 includes a conductive path that passes through the first conductive wiring structure and the second conductive wiring structure in sequence to transmit at least one of the first electrical signals.

[0053] In some embodiments, the photonic integrated circuit chip 110 includes a first surface and a second surface, wherein the first surface and the second surface face the first chip 130 and the substrate, respectively, and the second conductive wiring structure extends between the first surface and the second surface of the photonic integrated circuit chip 110.

[0054] An exemplary embodiment of the present invention provides a data transmission method for a semiconductor package, wherein the semiconductor package includes: a photonic integrated circuit chip 110, a plurality of memory chips 120, and a first chip 130; the method includes: the first chip 130 receiving a plurality of first electrical signals from the plurality of memory chips 120; the first chip 130 converting the plurality of first electrical signals into a second electrical signal, wherein a data transmission rate of the second electrical signal is greater than a data transmission rate of each of the plurality of first electrical signals; the photonic integrated circuit chip 110 receiving the second electrical signal; and the photonic integrated circuit chip 110 converting the second electrical signal into a second optical signal.

[0055] In some embodiments, the photonic integrated circuit chip 110 outputs the second optical signal.

[0056] In some embodiments, the first chip 130 performs parallel-to-serial conversion on the data represented by the plurality of first electrical signals from the plurality of memory chips to generate the second electrical signal.

[0057] In some embodiments, the photonic integrated circuit chip outputs the second optical signal.

[0058] In addition, in describing the semiconductor package 100 provided by the embodiment of the present invention, the transmission method of electrical signals and optical signals and other related features have been described, which are also applicable to the semiconductor package data transmission method and will not be repeated here.

[0059] Those skilled in the art should understand that what is disclosed above is merely an embodiment of the present invention, and certainly cannot be used to limit the scope of rights for which the present invention is requested for patent protection. Equivalent changes made based on the embodiment of the present invention still fall within the scope covered by the claims of the present invention.

Claims

1. A semiconductor package, comprising: Photonic integrated circuit chips; multiple memory chips; a first chip electrically connected to the photonic integrated circuit chip so as to transmit data with the photonic integrated circuit through electrical signals; and The first chip is electrically connected to each of the plurality of memory chips, so as to transmit data to each of the plurality of memory chips through electrical signals; The first chip is configured to convert a plurality of first electrical signals from the plurality of memory chips into a second electrical signal that is transmitted to the photonic integrated circuit chip, and a data transmission rate of the second electrical signal is greater than a data transmission rate of each of the plurality of first electrical signals; The first chip includes a parallel-to-serial conversion unit, which is configured to perform parallel-to-serial conversion on data represented by a plurality of first electrical signals from the plurality of memory chips to generate the second electrical signal. 2 . The semiconductor package of claim 1 , wherein the photonic integrated circuit chip is configured to convert the second electrical signal into a second optical signal. 3 . The semiconductor package of claim 2 , wherein the photonic integrated circuit chip is configured to output the second optical signal.

4. The semiconductor package of claim 1 , wherein the photonic integrated circuit chip is configured to convert a first optical signal into a third electrical signal; and the first chip is configured to convert one of the third electrical signals from the photonic integrated circuit chip into a plurality of fourth electrical signals that are transmitted to the plurality of memory chips, and a data transmission rate of the third electrical signal is greater than a data transmission rate of each of the plurality of fourth electrical signals.

5. The semiconductor package according to claim 4, wherein the first chip comprises a serial-to-parallel conversion unit, and the serial-to-parallel conversion unit is configured to perform serial-to-parallel conversion on the data represented by the third electrical signal from the photonic integrated circuit chip to generate a plurality of the fourth electrical signals. The semiconductor package according to claim 1 , wherein the plurality of memory chips are arranged around the photonic integrated circuit chip.

7. The semiconductor package according to any one of claims 1 to 6, wherein the semiconductor package comprises a substrate; the photonic integrated circuit chip, the plurality of memory chips, and the first chip are arranged on the same side of the substrate, and the photonic integrated circuit chip is arranged between the first chip and the substrate.

8. The semiconductor package of claim 7, wherein the substrate comprises a first conductive wiring structure, the photonic integrated circuit chip comprises a second conductive wiring structure, and the electrical connection path from at least one of the plurality of memory chips to the first chip comprises a conductive path that passes through the first conductive wiring structure and the second conductive wiring structure in sequence to transmit at least one of the first electrical signals.

9. The semiconductor package according to claim 8, wherein the photonic integrated circuit chip comprises a first surface and a second surface, wherein the first surface and the second surface face the first chip and the substrate respectively, and the second conductive wiring structure extends between the first surface and the second surface of the photonic integrated circuit chip.

10. A data transmission method for a semiconductor package, the semiconductor package comprising: a photonic integrated circuit chip, a plurality of memory chips, and a first chip; The method comprises: The first chip receives a plurality of first electrical signals from the plurality of memory chips; The first chip converts the plurality of first electrical signals into a second electrical signal, wherein a data transmission rate of the second electrical signal is greater than a data transmission rate of each of the plurality of first electrical signals; The photonic integrated circuit chip receives the second electrical signal; The photonic integrated circuit chip converts the second electrical signal into a second optical signal; The first chip performs parallel-to-serial conversion on the data represented by the plurality of first electrical signals from the plurality of memory chips to generate the second electrical signal.

11. The data transmission method according to claim 10, wherein: The photonic integrated circuit chip outputs the second optical signal.

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