Erbium and indium co-doped gallium oxide phosphor and its preparation method and application

Abstract

The present invention belongs to the technical field of luminescent materials, and specifically relates to an erbium and indium co-doped gallium oxide phosphor and its preparation method and application. The chemical formula of the erbium and indium co-doped gallium oxide phosphor is Ga 2‑x‑y Er x In y O3, wherein Ga2O3 is the matrix, Er is the doping rare earth element, and In is the doping rare element, with x ranging from 0.005 to 0.02; and y ranging from 0.005 to 0.06. Compared with existing Er-doped gallium oxide phosphors, the erbium and indium co-doped gallium oxide phosphors provided by the present invention have photoinduced green and red luminescence intensities increased by 60 times and 44 times, respectively, significantly improving the overall performance of the phosphor. The erbium and indium co-doped gallium oxide phosphors provided by the present invention have strong luminescence intensity in the green light band, a simple preparation process, and readily available materials, showing great application prospects.

Description

Technical Field

[0001] The present invention belongs to the technical field of luminescent materials, and in particular relates to an erbium and indium co-doped gallium oxide phosphor and a preparation method and application thereof. Background Art

[0002] Gallium oxide (Ga2O3) is an ultra-wide bandgap oxide semiconductor material with enormous application prospects in power electronics and optoelectronic information, and has become a hot topic of research both domestically and internationally. Gallium oxide has six crystalline phases, the most stable of which is the β phase, followed by the ε and α phases. As the most stable, the β phase offers advantages such as a stable crystal structure, a wide bandgap, a high breakdown electric field, radiation resistance, and excellent thermal and chemical stability. It has the potential to replace third-generation semiconductor silicon carbide. Its excellent physical, chemical, electrical, and optical properties can meet the emerging demands of low-energy, high-power, and integrated electronic devices. Furthermore, gallium oxide is a well-suited matrix material for rare earth element doping and an ideal host for rare earth ions. Therefore, light-emitting devices with different emission wavelengths can be fabricated by controlling the rare earth element doping level.

[0003] The potential application of rare earth element doped gallium oxide in temperature sensors, thin film electroluminescent displays and compact color displays has attracted people's attention. Guo et al. prepared rare earth erbium ions (Er) by pulsed laser deposition technology. 3+ ) doped Ga 2-x Er x O3 thin film, green luminescence was observed at 550nm. 3+ Compared with GaN thin films with ions, Ga 2-x Er x O3 thin films show low temperature sensitivity. At present, the research on the photoluminescence and electroluminescence properties of erbium-doped gallium oxide is still in its infancy. The existing erbium ion-doped gallium oxide materials generally have the problems of weak luminescence intensity and low luminescence efficiency, which are difficult to meet the requirements of practical applications. This makes it difficult to enhance the performance of rare earth Er. 3+ The luminescence performance of ion-doped gallium oxide is particularly urgent. Summary of the Invention

[0004] In order to address the shortcomings and deficiencies of the prior art, the primary purpose of the present invention is to provide a gallium oxide phosphor co-doped with erbium and indium.

[0005] Another object of the present invention is to provide a method for preparing the aforementioned erbium- and indium-co-doped gallium oxide phosphor. The phosphor prepared using this method requires minimal experimental conditions and is simple to operate. Indium (In) acts as a sensitizer, enhancing the photoluminescence intensity of Er. The resulting powder sample exhibits excellent luminescence performance, high intensity, and high efficiency.

[0006] Another object of the present invention is to provide an application of the above-mentioned erbium and indium co-doped gallium oxide phosphor.

[0007] The purpose of the present invention is achieved through the following technical solutions:

[0008] A gallium oxide phosphor co-doped with erbium and indium, the chemical formula of which is Ga 2-x-y Er x In y O3, wherein Ga2O3 is the matrix, Er is the doped rare earth element, In is the doped rare element, the value range of x is 0.005 to 0.02; the value range of y is 0.005 to 0.06.

[0009] Preferably, the value range of x is 0.01 to 0.02, and the value range of y is 0.03 to 0.04.

[0010] Most preferably, the value of x is 0.015 and the value of y is 0.035.

[0011] Preferably, the erbium and indium co-doped gallium oxide phosphor can excite green light and red light under the conditions of a laser wavelength of 980 nm and a laser power of 100-400 mW.

[0012] Preferably, the gallium oxide phosphor co-doped with erbium and indium can absorb infrared light and emit light with wavelengths in the range of 540-570 nm and 640-700 nm.

[0013] The method for preparing the erbium and indium co-doped gallium oxide phosphor comprises the following steps:

[0014] Step 1: Weigh gallium oxide (Ga2O3) powder, erbium oxide (Er2O3) powder, and indium oxide (In2O3) powder;

[0015] Step 2: Place the powdered raw materials weighed in step 1 into a ball mill, add liquid medium, and perform ball milling and mixing;

[0016] Step 3: Dry the powder evenly mixed by ball milling in step 2 and pre-sinter in air;

[0017] Step 4: ball milling the pre-sintered powder again;

[0018] Step 5: sintering the powder sample obtained in step 4 at 1200-1250° C. for 4-16 hours, and cooling to obtain gallium oxide phosphor co-doped with erbium and indium.

[0019] The present invention adopts erbium oxide, indium oxide and gallium oxide, and uses solid phase reaction method to prepare gallium oxide-based phosphor with excellent photoluminescence performance without impurity phase. The sintering temperature, sintering time, Er3+ Effect of ion doping concentration on Ga 2-x Er x The influence of O3 on the luminescence properties is to obtain the best sintering temperature, sintering time and Er 3+ In is introduced based on the ion doping concentration 3+ Ions improve the luminescence properties of phosphors, 3+ The introduction of ions into the lattice will lead to changes in the crystal structure and the coordination environment. These changes effectively reduce the non-radiative decay process, thereby enhancing the luminescence performance. In addition, the doping of In2O3 introduces lattice defects. Some electrons generated under 980nm laser excitation will be captured by the lattice defects, and the electrons in these defect states are then transferred to Er 3+ ions, leading to Er 3+ The luminescence intensity of the ions increases.

[0020] The amount ratio of gallium oxide, erbium oxide and indium oxide in step 1 is based on the chemical formula Ga 2-x-y Er x In y The values ​​of O3 and doping amounts x and y are determined. For example, when x = 0.015 and y = 0.035, the molar ratio of gallium oxide, erbium oxide, and indium oxide is 97.5:0.75:1.75.

[0021] The purity of gallium oxide in step 1 is preferably 99.999%; the purity of erbium oxide is preferably 99.99%; and the purity of indium oxide is preferably 99.99%.

[0022] The liquid medium in step 2 is anhydrous ethanol and / or deionized water.

[0023] The ball milling jar in step 2 is made of agate, stainless steel, nylon, polytetrafluoroethylene or alumina.

[0024] In step 3, the powder is dried and placed in a crucible (preferably an alumina crucible), and then placed in a muffle furnace for pre-calcination.

[0025] The ball milling in step 2 and step 4 is carried out in a planetary ball mill with a rotation speed of 200-500 r / min and a ball milling time of 5-10 h.

[0026] In the step 3, the drying temperature is 70-120° C. and the drying time is 180 min. The drying is carried out in an oven with a heating rate of 1-4° C. / min.

[0027] The step five comprises: heating the temperature to 1200-1550° C. at a heating rate of 2-4° C. / min.

[0028] The sintering temperature in step five is preferably 1250° C., and the holding time is preferably 8 hours.

[0029] The erbium and indium co-doped gallium oxide phosphor can be used to prepare green luminescent materials, and can be specifically applied in the fields of optoelectronics, optical communications, lasers, and bio-imaging.

[0030] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0031] 1. Compared to existing Er-only doped gallium oxide phosphors, the erbium- and indium-co-doped gallium oxide phosphors provided by this invention achieve photoluminescent green and red luminescence intensities 60 times and 44 times higher, respectively, significantly enhancing the overall performance of the phosphor. Er serves as the luminescence center and activator, while In acts as a sensitizer, boosting luminescence intensity.

[0032] 2. The erbium and indium co-doped gallium oxide phosphor provided by the present invention has strong luminous intensity in the green light band, a simple preparation process with a short cycle, simple operation, is suitable for mass production, and the materials used are easily available, thus having great application prospects.

[0033] 3. The present invention enhances the luminescence performance of erbium (Er) doped gallium oxide by introducing indium (In) ions, and also has the following advantages: 1) Enhanced luminescence intensity: By introducing indium ions, the luminescence intensity at 555nm is increased by up to 60 times. This is attributed to the fact that indium ion doping reduces the non-radiative attenuation process and introduces lattice defects to enhance the energy transfer from indium ions to erbium ions, which significantly improves the luminescence intensity. 2) Suppressing non-radiative processes: In doping can suppress non-radiative processes, such as multi-level transitions and cross-hybridization, which can lead to energy loss. By limiting these non-radiative processes, In-enhanced Er-doped gallium oxide materials can improve the photoluminescence intensity. 3) Increasing photon lifetime: The introduction of indium ions increases the lifetime of Ga 1.985-y Er 0.015 In y The photon lifetime of O3 phosphors, such as Ga 1.95 Er 0.015 In 0.035 The photon lifetime of green and red light of O3 phosphor is shorter than that of Ga 1.985 Er 0.015 The photon lifetimes of the green and red light of the O3 phosphor increased by 235% and 271%, respectively, providing strong evidence for the efficient energy transfer between indium and erbium ions. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1The XRD patterns of Er-doped and Er- and In-co-doped gallium oxide phosphors prepared in Example 1 of the present invention are shown in Figure 1, where (a) shows the XRD patterns of Er-doped and Er- and In-co-doped gallium oxide phosphors prepared in Comparative Examples 1-8. 3+ Ga ion doping concentration (x) 2-x Er x Powder X-ray diffraction (XRD) pattern of O3 phosphor; (b) is the powder X-ray diffraction (XRD) pattern of Ga prepared in Comparative Example 6. 1.985 Er 0.015 O3 phosphor (y=0), different In phosphors prepared in Examples 1-12 3+ Ga ion doping concentration (y) 1.985-y Er 0.015 In y Powder X-ray diffraction (XRD) pattern of O3 phosphor.

[0035] Figure 2 Different Er prepared in Comparative Examples 1-8 3+ Ga ion doping concentration (x) 2-x Er x The luminescence spectrum of O3 phosphor under laser excitation with a wavelength of 980nm and a power of 400mW.

[0036] Figure 3 GaNs with different sintering temperatures obtained in Comparative Examples 6 and 9-15 1.985 Er 0.015 The luminescence spectrum of O3 phosphor under laser excitation with a wavelength of 980nm and a laser power of 400mW.

[0037] Figure 4 Ga prepared in Comparative Examples 6 and 16-21 1.985 Er 0.015 The curve of the luminous intensity of O3 phosphor changing with sintering time.

[0038] Figure 5 Ga prepared in Comparative Example 6 1.985 Er 0.015 O3 phosphor (y=0), different In phosphors prepared in Examples 2-12 3+ Ga ion doping concentration (y) 1.985-y Er 0.015 In y The luminescence spectrum of O3 phosphor under laser excitation with a wavelength of 980nm and a power of 100mW.

[0039] Figure 6 Ga prepared in Comparative Example 6 1.985 Er 0.015 O3 phosphor (y=0) and different In phosphors prepared in Example 4, Example 6, Example 1, Example 9, and Example 113+ Ga ion doping concentration (y) 1.985-y Er 0.015 In y Fluorescence photos of O3 phosphor taken under laser excitation with a wavelength of 980nm and a power of 100mW.

[0040] Figure 7 Ga 1.985 Er 0.015 O3 and Ga 1.95 Er 0.015 In 0.035 Photon lifetime decay curves of O3 phosphor at 555 and 673 nm.

[0041] Figure 8 Ga prepared in Comparative Example 6 1.985 Er 0.015 O3 phosphor (Er single doped Ga2O3 phosphor) and Ga2O3 phosphor prepared in Example 1 1.95 Er 0.015 In 0.035 The luminescence spectrum of O3 phosphor (In / Er co-doped Ga2O3 phosphor) under laser excitation with a wavelength of 980nm and a power of 100mW. 1.985 Er 0.015 The luminous intensity of O3 phosphor has been multiplied by 20 times. DETAILED DESCRIPTION

[0042] The present invention will be described in further detail below with reference to the examples and accompanying drawings, but the embodiments of the present invention are not limited thereto. The raw materials involved in the present invention can be purchased directly from the market. For process parameters not specifically noted, conventional techniques can be used.

[0043] Example 1

[0044] A method for preparing erbium and indium co-doped gallium oxide phosphor comprises the following steps:

[0045] Step 1: Use a high-precision electronic scale to weigh gallium oxide (Ga2O3) powder, erbium oxide (Er2O3) powder, and indium oxide (In2O3) powder; the molar ratio of gallium oxide, erbium oxide, and indium oxide is 97.5:0.75:1.75; the purity of gallium oxide is 99.999%; the purity of erbium oxide is 99.99%; and the purity of indium oxide is 99.99%;

[0046] Step 2: Place the powdered raw material weighed in step 1 into a container, add anhydrous ethanol, and place in a planetary ball mill for ball milling; the ball mill speed is 300 r / min, and the ball milling time is 5 h; the container is an agate ball mill jar with a container capacity of 500 ml;

[0047] Step 3: drying the powder obtained by ball milling in step 2, placing it in an oven, placing it in an alumina crucible, and then pre-calcining it in a muffle furnace; the oven temperature is set to 70°C for 180 minutes; the oven heating rate is 1-4°C / min; the pre-calcination includes heating the sample to 1200°C at a rate of 4-6°C / min, holding the temperature for 12-18 hours, and then cooling it in the furnace;

[0048] Step 4: The pre-sintered powder is placed in a planetary ball mill for secondary ball milling at a speed of 300 r / min and a ball milling time of 10 h.

[0049] Step 5: The powder sample obtained in step 4 was heated to 1250°C at a heating rate of 4°C / min and kept at this temperature for 8 hours. After cooling, erbium and indium co-doped gallium oxide phosphor (Ga 2-x-y Er x In y O3, x=0.015, y=0.035).

[0050] Examples 2 to 12

[0051] Example 2-12 Prepare Ga by referring to the preparation steps of Example 1 2-x-y Er x In y O3, which differs from Example 1 in the amount ratio of gallium oxide, erbium oxide and indium oxide. See the parameters listed in Table 1 for details.

[0052] Table 1

[0053] x y Sintering temperature / ℃ Sintering time / h Example 2 0.015 0.005 1250 8 Example 3 0.015 0.01 1250 8 Example 4 0.015 0.015 1250 8 Example 5 0.015 0.02 1250 8 Example 6 0.015 0.025 1250 8 Example 7 0.015 0.03 1250 8 Example 8 0.015 0.04 1250 8 Example 9 0.015 0.045 1250 8 Example 10 0.015 0.05 1250 8 Example 11 0.015 0.055 1250 8 Example 12 0.015 0.06 1250 8

[0054] Comparative Examples 1 to 15

[0055] Comparative Examples 1-15 Ga was prepared by referring to the preparation steps of Example 1. 2-x Er x O3 is different from Example 1 in that it is not doped with indium oxide, and the difference also lies in the erbium ion doping concentration, sintering temperature and sintering time. See the parameters listed in Table 2 for details.

[0056] Table 2

[0057] x Sintering temperature / ℃ Sintering time / h Comparative Example 1 0.0025 1250 8 Comparative Example 2 0.005 1250 8 Comparative Example 3 0.0075 1250 8 Comparative Example 4 0.01 1250 8 Comparative Example 5 0.0125 1250 8 Comparative Example 6 0.015 1250 8 Comparative Example 7 0.0175 1250 8 Comparative Example 8 0.02 1250 8 Comparative Example 9 0.015 1200 8 Comparative Example 10 0.015 1300 8 Comparative Example 11 0.015 1350 8 Comparative Example 12 0.015 1400 8 Comparative Example 13 0.015 1450 8 Comparative Example 14 0.015 1500 8 Comparative Example 15 0.015 1550 8 Comparative Example 16 0.015 1250 0.5 Comparative Example 17 0.015 1250 1 Comparative Example 18 0.015 1250 2 Comparative Example 19 0.015 1250 4 Comparative Example 20 0.015 1250 16 Comparative Example 21 0.015 1250 32

[0058] The characterization data of the phosphor samples prepared in the above examples and comparative examples are as follows: Figures 1 to 8 shown.

[0059] Figure 1The XRD patterns of Er-doped and Er- and In-co-doped gallium oxide phosphors prepared in Example 1 of the present invention are shown in Figure 1, where (a) shows the XRD patterns of Er-doped and Er- and In-co-doped gallium oxide phosphors prepared in Comparative Examples 1-8. 3+ Ga ion doping concentration 2-x Er x Powder X-ray diffraction (XRD) pattern of O3 phosphor; (b) is the powder X-ray diffraction (XRD) pattern of Ga prepared in Comparative Example 6. 1.985 Er 0.015 O3 phosphor (y=0) and different In phosphors prepared in Examples 1-12 3+ Ga ion doping concentration 1.985-y Er 0.015 In y The powder X-ray diffraction (XRD) pattern of O3 phosphor shows that the sample has only the diffraction peak of β-Ga2O3, indicating that the sample has no impurity phase.

[0060] Figure 2 Shows Ga 2-x Er x The luminescence spectrum of O3 (0.0025≤x≤0.02) phosphor sintered at 1250℃ for 8 hours under laser excitation with a wavelength of 980nm and a power of 400mW. The luminescence peaks centered at 524, 555 and 673nm correspond to 2 H 11 / 2 - 4 I15 / 2, 4 S 3 / 2 - 4 I 15 / 2 and 4 F 9 / 2 - 4 I 15 / 2 Transition. The green and red luminescence intensities increase with Er 3+ The luminescence intensity (543, 555 and 673 nm) changes significantly with the increase of Er ion concentration. 3+ The relationship between ion concentrations is as follows Figure 2 The luminous intensity of the three bands (543, 555 and 673nm) is 3+ The ion concentration reaches the maximum value when it is 0.015, and increases with the 3+ The further increase of ion concentration, the lower the value, that is, x = 0.015 is the best 3+ Ion doping concentration.

[0061] On this basis, in order to further improve the luminescence performance, we sintered a series of Ga 1.985 Er 0.015 O3 phosphor. Figure 3 Shows Ga sintered at different temperatures 2-xEr x The luminescence spectrum of O3 (x=0.015) phosphor under the excitation of a laser with a wavelength of 980nm and a power of 400mW. When the sintering temperature increases from 1200℃ to 1550℃, the green and red luminescence intensities change significantly. Figure 3 The inset shows the relationship between the luminescence intensity at 543, 555 and 673 nm and the sintering temperature, and the optimal sintering temperature is 1250 °C.

[0062] On this basis, in order to further improve the luminescence performance, we sintered at 1250℃ for different times to prepare a series of Ga 1.985 Er 0.015 O3 phosphor. Figure 4 Shows Ga 1.985 Er 0.015 The curve of the luminescence intensity of O3 phosphor changing with sintering time. When the sintering time increases from 0.5 hours to 32 hours, the intensity of both the green and red luminescence peaks changes. Figure 4 The illustration shows the relationship between the luminescence intensity at 543, 555 and 673 nm and the sintering time. When the sintering time is 8 hours, the phosphor shows the strongest luminescence intensity, so it can be concluded that the optimal sintering time is 8 hours.

[0063] Therefore, determine Ga 1.985 Er 0.015 Best Er for O3 phosphor 3+ The ion doping concentration, sintering temperature and sintering time are x=0.015, 1250°C and 8 hours, respectively.

[0064] On this basis, in order to obtain the best 3+ Ion doping concentration, at the optimal sintering temperature, sintering time and Er 3+ A series of different In doping concentrations (1250 ° C, 8 hours, x = 0.015) were prepared. 3+ Ga ion doping concentration 1.985- y Er 0.015 In y O3 phosphor.

[0065] Figure 5 Shows In 3+ Ion-doped Ga 1.985-y Er 0.015 In y The luminescence spectrum of O3 phosphor under the laser excitation of 980nm wavelength and 400mW power. All samples showed green luminescence at 543nm and 555nm, and red luminescence at 673nm, which is consistent with In 3+ Ion-undoped Ga2-x Er x The luminescence peak position of O3 phosphor is consistent, but the luminescence intensity is different when doped with In. 3+ ions changed, indicating that In 3+ The introduction of ions into the sample does not change Er 3+ ions, but strongly changes the wavelength of Er 3+ The luminescence intensity of the ions. Figure 5 The inset shows the luminescence intensity (543, 555 and 673 nm) versus In 3 + The relationship between ion doping concentration. As y increases, the luminous intensity of the three bands gradually increases, reaches the maximum value when y = 0.035, and decreases as y further increases. 3+ The effect of ion concentration on luminescence intensity can be distinguished intuitively by the naked eye, such as Figure 6 As shown in the photo. Therefore, Ga 1.985-y Er 0.015 In y Best In 3+ The ion doping concentration is y=0.035.

[0066] Figure 7 Ga 1.985 Er 0.015 O3 and Ga 1.95 Er 0.015 In 0.035 The photon lifetime decay curve of O3 phosphor at 555 and 673nm. The results show that at a wavelength of 555nm, Ga 1.985 Er 0.015 O3 and Ga 1.95 Er 0.015 In 0.035 The photon lifetimes of O3 are 0.020ms and 0.067ms respectively. Indium doping increases the photon lifetime of this wavelength by 235%. At a wavelength of 673nm, Ga 1.985 Er 0.015 O3 and Ga 1.95 Er 0.015 In 0.035 The photon lifetimes of O3 are 0.029ms and 0.1076ms respectively, and indium doping increases the photon lifetime of this wavelength by 271%. These results show that under the same sample preparation conditions, the introduction of In 3+ ions, the fluorescence decay time increased significantly, which is attributed to the 3+ The interaction between ions and lattice defects reduces non-radiative recombination and decay processes, allowing more electrons to transition from the excited state back to the ground state, thereby extending the fluorescence lifetime.

[0067] Figure 8 Ga prepared in Comparative Example 6 1.985 Er 0.015 O3 phosphor (Er single doped Ga2O3 phosphor) and Ga2O3 phosphor prepared in Example 1 1.95 Er 0.015 In 0.035 The luminescence spectrum of O3 phosphor (In / Er co-doped Ga2O3 phosphor) under laser excitation with a wavelength of 980nm and a power of 100mW. It can be seen that Er 3+ Ion-doped gallium oxide phosphor emits green light with a wavelength of 555nm under laser excitation. Its luminous intensity is still weak after multiplying by 20 times, while Er 3+ ions and In 3+ The luminescence intensity of the ion-co-doped gallium oxide phosphor at a wavelength of 555 nm is greatly enhanced, and its luminescence intensity is Er 3+ The luminescence intensity of the single-ion doped gallium oxide phosphor is 60 times that of the In 3+ Ion doping can effectively transfer energy to Er 3+ ions, thereby improving the luminescence intensity of Er-doped gallium oxide phosphor.

[0068] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be considered as equivalent replacement methods and are included in the scope of protection of the present invention.

Claims

1. A gallium oxide phosphor co-doped with erbium and indium, characterized in that: Its chemical formula is Ga 2-x-y Er x In y O3, where Ga2O3 is the matrix, Er is the doping rare earth element, and In is the doping rare element. x The value range is 0.005~0.02; y The value range is 0.005~0.

06.

2. The erbium and indium co-doped gallium oxide phosphor according to claim 1, characterized in that: x The value range is 0.01~0.02, y The value range is 0.03~0.

04.

3. The erbium and indium co-doped gallium oxide phosphor according to claim 1, characterized in that: x is 0.015; y is 0.

035.

4. The erbium and indium co-doped gallium oxide phosphor according to claim 1, characterized in that: The erbium and indium co-doped gallium oxide phosphor can excite green light and red light under the conditions of a laser wavelength of 980 nm and a laser power of 100-400 mW.

5. The erbium and indium co-doped gallium oxide phosphor according to claim 1, characterized in that: The gallium oxide phosphor co-doped with erbium and indium can absorb infrared light and emit light with wavelengths in the range of 540-570 nm and 640-700 nm.

6. The method for preparing the erbium and indium co-doped gallium oxide phosphor according to any one of claims 1 to 5, characterized in that: The following steps are involved: Step 1: Weigh gallium oxide powder, erbium oxide powder, and indium oxide powder; Step 2: Place the powdered raw materials weighed in step 1 into a ball mill, add liquid medium, and perform ball milling and mixing; Step 3: Dry the powder evenly mixed by ball milling in step 2 and pre-sinter in air; Step 4: ball mill the powder pre-sintered in step 3 again; Step 5: sintering the powder sample obtained in step 4 at 1200-1550° C. for 4-16 hours, and cooling the powder to obtain gallium oxide phosphor co-doped with erbium and indium.

7. The preparation method according to claim 6, characterized in that The amount ratio of gallium oxide, erbium oxide and indium oxide in step 1 is 2- x - y : x : y ; The liquid medium in step 2 is anhydrous ethanol and / or deionized water.

8. The preparation method according to claim 6, characterized in that The ball milling in step 2 and step 4 is carried out in a planetary ball mill, the rotation speed of the planetary ball mill is 200-500 r / min, and the ball milling time is 5-10 h; In the step 3, the drying temperature is 70-120° C. and the drying time is 180 min. The drying is carried out in an oven with a heating rate of 1-4° C. / min.

9. The preparation method according to claim 6, characterized in that In the step 5, the temperature is raised to 1200-1550° C. at a heating rate of 2-4° C. / min.

10. The preparation method according to claim 6, characterized in that The sintering temperature in step 5 is 1250° C. and the sintering time is 8 hours.

11. Use of the erbium and indium co-doped gallium oxide phosphor according to any one of claims 1 to 5 in the technical field of preparing green luminescent materials.

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