Packaging method, system and computer readable storage medium for high bandwidth memory

Abstract

The application provides a high bandwidth memory packaging method, system and computer readable storage medium, the method comprising: (a) moving a second wafer above a first wafer, and the first wafer and the second wafer are located between an X-ray generator and an X-ray sensor; (b) obtaining a first X-ray image of the first wafer and the second wafer by the X-ray generator and the X-ray sensor; (c) when the difference between the first X-ray image and a template image exceeds a preset threshold, adjusting the position of the second wafer and returning to step (b), and when the difference between the first X-ray image and the template image is within the preset threshold range, stopping adjusting the position of the second wafer. The application forms an X-ray image by using an X-ray generator and an X-ray sensor in the high bandwidth memory packaging process, and compares the formed X-ray image with a template image to adjust the position of the wafer, so that the alignment accuracy of the stacked wafers in the high bandwidth memory can be improved.

Description

Technical Field

[0001] This invention relates to the field of chip packaging, and more specifically, to a packaging method, system, and computer-readable storage medium for a high-bandwidth memory. Background Technology

[0002] High-bandwidth memory (HBM) is a high-performance DRAM based on 3D stacking technology, suitable for applications with high memory bandwidth requirements, such as graphics processors, network switching and forwarding devices (such as routers and switches). HBM consists of multiple memory chips (bare dies) stacked vertically, and these stacked chips are electrically connected to each other via through-silicon vias (TSVs) filled with conductive material.

[0003] Currently, multilayer memory chips in high-bandwidth memory typically employ thermal compression bonding (TCB) technology. Through rapid heating, bumps on the memory chip are electrically bonded to pads on the back of adjacent memory chips, thus achieving electrical connections between the multilayer memory chips. Because signal transmission is required across the multilayer memory chips, each memory chip contains numerous through-silicon vias (TSVs), and a large number of pads and bumps are formed on the chip's surface. These pads and bumps have diameters between 10-30 μm. If alignment errors occur during the bonding process, it can lead to short circuits and other malfunctions in the bonded high-bandwidth memory. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a new packaging method, system and computer-readable storage medium for high bandwidth memory, which is prone to alignment errors in the multilayer memory chip packaging process of the above-mentioned high bandwidth memory.

[0005] The technical solution of the present invention to solve the above-mentioned technical problems is to provide a packaging method for a high-bandwidth memory, the method comprising:

[0006] (a) The second wafer is moved above the first wafer, and both the first wafer and the second wafer are located between the X-ray generator and the X-ray sensor;

[0007] (b) Acquire first X-ray images of the first wafer and the second wafer using the X-ray generator and the X-ray sensor;

[0008] (c) When the difference between the first X-ray image and the template image exceeds a preset threshold, adjust the position of the second wafer and return to step (b); and when the difference between the first X-ray image and the template image is within the preset threshold range, stop adjusting the position of the second wafer.

[0009] As a further improvement of the present invention, step (a) is further included prior to:

[0010] The first wafer is moved between the X-ray generator and the X-ray sensor;

[0011] The X-ray generator and X-ray sensor acquire second X-ray images of several regions on the first wafer, and store the second X-ray images as template images, wherein each region includes at least one complete first bare die.

[0012] As a further improvement of the present invention, the method further includes:

[0013] After the lower surface of the second wafer is attached to the upper surface of the first wafer, the hot pressing assembly abuts against the upper surface of the second wafer and heats the second wafer, so that each second bare die in the second wafer is bonded to the pad of a first bare die through a bump.

[0014] As a further improvement of the present invention, the method further includes:

[0015] During the heating of the second wafer by the heating component, at least one third X-ray image is acquired by an X-ray generator and an X-ray sensor at a preset frequency, and the heating temperature of different heating areas of the heating component is adjusted when the difference between the third X-ray image and the template image exceeds a preset range.

[0016] As a further improvement of the present invention, adjusting the heating temperature of different heating regions of the heating assembly when the difference between the third X-ray image and the template image exceeds a preset range includes:

[0017] When the movement of the third X-ray image relative to the template image in any direction exceeds the preset range, the temperature on the heating component on the same side as the movement direction of the third X-ray image relative to the template image is reduced, or the temperature on the heating component on the opposite side of the movement direction of the third X-ray image relative to the template image is increased.

[0018] As a further improvement of the present invention, the method further includes:

[0019] After the second bare die is bonded to the first bare die, the hot-pressing assembly is removed, and a fourth X-ray image is obtained through an X-ray generator and an X-ray sensor;

[0020] An alarm signal is output when the difference between the fourth X-ray image and the template image exceeds a preset range.

[0021] As a further improvement of the present invention, the first and second bare dies are respectively provided with a plurality of through-silicon vias, and each of the through-silicon vias is filled with a conductive material that cannot be penetrated by X-rays.

[0022] As a further improvement of the present invention, the X-ray generator includes three X-ray emitting heads, and the X-ray sensor includes three X-ray receiving units. The three X-ray emitting heads and the three X-ray receiving units are respectively corresponding to the edges of the first wafer, and the central angle between any two X-ray emitting heads is greater than 60°.

[0023] The present invention also provides a high-bandwidth memory packaging system, including a memory and a processor, wherein the memory stores a computer program executable by the processor, and the processor executes the computer program to implement the steps of the high-bandwidth memory packaging method described above.

[0024] The present invention also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the steps of the high-bandwidth memory encapsulation method described above.

[0025] The present invention has the following beneficial effects: by using an X-ray generator and an X-ray sensor to form an X-ray image during the high-bandwidth memory packaging process, and comparing the formed X-ray image with a template image to adjust the position of the wafer, the alignment accuracy of the stacked wafers in the high-bandwidth memory can be improved. Attached Figure Description

[0026] Figure 1 This is a flowchart illustrating the packaging method for a high-bandwidth memory provided in an embodiment of the present invention;

[0027] Figure 2 This is a schematic diagram illustrating the formation principle of the first X-ray image in the high-bandwidth memory packaging method provided in this embodiment of the invention;

[0028] Figure 3 This is a schematic diagram of the first X-ray image in the high-bandwidth memory packaging method provided in the embodiment of the present invention;

[0029] Figure 4 This is another schematic diagram of forming a first X-ray image in the packaging method of the high-bandwidth memory provided in the embodiment of the present invention;

[0030] Figure 5 This is a schematic diagram of the imaging region in the high-bandwidth memory packaging method provided in this embodiment of the invention;

[0031] Figure 6 This is a schematic diagram of another imaging region in the high-bandwidth memory packaging method provided in this embodiment of the invention;

[0032] Figure 7 This is a schematic diagram of a hot-pressing assembly used to bond a first wafer and a second wafer in a high-bandwidth memory packaging method provided in another embodiment of the present invention;

[0033] Figure 8 This is a schematic diagram of the third X-ray image in the high-bandwidth memory packaging method provided in the embodiment of the present invention;

[0034] Figure 9 This is a schematic diagram of another third X-ray image in the high-bandwidth memory packaging method provided in the embodiments of the present invention. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0036] The aforementioned high-bandwidth memory includes a first die and a second die stacked on top of each other. The first die and the second die each have a plurality of through-silicon vias (TSVs) filled with conductive material. The upper surface of the conductive material of each of the first die and the second die serves as a first pad, and the lower surface of the conductive material of each of the first die and the second die serves as a second pad. The first pad and the second pad are connected by a plurality of bumps (for example, the bumps may be made of solder).

[0037] This high-bandwidth memory packaging method is mainly applied to high-bandwidth memory packaging equipment and enables the alignment of two adjacent wafers. The aforementioned high-bandwidth memory packaging equipment includes a rack, an X-ray generator, an X-ray sensor, a wafer transfer device, and a control device. The rack has at least one bonding station (i.e., the position for wafer bonding). The X-ray generator and X-ray sensor are fixed at the bonding station on the rack. The transfer device can be mounted on the rack or independent of the rack and can move the wafers between positions on the rack; for example, the transfer device can be a conveyor belt, a robotic arm, etc. The X-ray generator, X-ray sensor, and transfer device are all signal-connected to the control device and perform corresponding actions under the control of the control device.

[0038] Combination Figures 1-3 As shown, the high-bandwidth memory packaging method of this embodiment can be executed by the aforementioned control device, and the method includes the following steps:

[0039] Step S11: Move the second wafer 24 above the first wafer 23, with both the first wafer 23 and the second wafer 24 positioned between the X-ray generator 21 and the X-ray sensor 22. The first wafer 23 can be fixed to a carrier plate (which can be made of an X-ray-permeable material) or suspended in the air. For ease of subsequent operation, a gap exists between the first wafer 23 and the second wafer 24 in this step; the size of the gap is not limited, as long as the second wafer 24 can move relative to the first wafer 23.

[0040] The aforementioned X-ray generator 21 is a device that generates X-rays (X-ray frequency range of 30PHz to 300EHz, corresponding wavelength of 0.01nm to 10nm, energy of 100eV to 10MeV, and penetrating power), while the X-ray sensor 22 is a device that forms image signals under X-ray irradiation, and the X-ray sensor 22 is located on the path of the beam emitted by the X-ray generator 21. The planes of the aforementioned first wafer 23 and second wafer 24 are perpendicular to the X-rays generated by the X-ray generator 21. The aforementioned X-ray generator 21 and X-ray sensor 22 can directly use existing equipment, and will not be described in detail here.

[0041] The first and second wafers mentioned above are products after back-side grinding or wafer thinning processes, and the first wafer is moved between the X-ray generator and the X-ray sensor before the second wafer. The first wafer 23 includes a plurality of first bare dies arranged in an array, and the second wafer 24 includes a plurality of second bare dies arranged in an array. The first and second bare dies have the same dimensions and the same first pads 233 and 243 (i.e., the upper surface of the conductive material), second pads 232 and 242 (i.e., the lower surface of the conductive material), and bumps 234 (which may be made of solder and may be located on the upper surface of the first bare die or the lower surface of the second bare die). The distribution of the first bare dies on the first wafer is the same as the distribution of the second bare dies on the second wafer. Specifically, the first and second wafers may be composed of two identical wafers, and the first and second bare dies are used to implement data storage, respectively. The pads and bumps 234 on the first and second bare dies used for bonding are made of conductive materials that cannot be penetrated by X-rays, such as materials containing copper, platinum, lead, etc.

[0042] Specifically, the first and second bare dies each have a plurality of through-silicon vias, and each through-silicon via is filled with conductive material 231, 241 that cannot be penetrated by X-rays, and the first or second pad has bumps 234.

[0043] Optionally, the bump 234 can be pre-set onto the first pad 233 of the first bare die, and the bump 234 can be made of a metal material that is permeable to X-rays (such as materials containing gold, tin, copper-nickel-gold, etc.). The first and second bare dies are respectively filled with a number of conductive materials 231 and 241 that are not permeable to X-rays. The use of a light-transmitting material for the bump 234 can make the conductive materials 231 and 241 aligned. If the bump 234 is a non-permeable material, if there is an error in the alignment accuracy between the bump 234 and the first pad of the first wafer during the fabrication of the bump 234, after the second pad 242 of the second bare die is aligned with the bump 234, the second wafer will have a secondary error when bonding with the first wafer, resulting in misalignment after bonding, or even short circuit. The use of a conductive material that is permeable to X-rays for the bump 234 can ensure the accuracy of the alignment.

[0044] Step S12: Acquire first X-ray images 31 of the first wafer and the second wafer using the X-ray generator 21 and the X-ray sensor 22. Specifically, a control signal is first sent to the X-ray generator 21 to generate X-rays, and the output signal of the X-ray sensor 22 is acquired. Furthermore, the intensity and duration of the X-rays output by the X-ray generator 21 can be adjusted to ensure that the output signal of the X-ray sensor 22 meets the requirements for the clarity of the X-ray image.

[0045] In this step, since the main body of the first and second wafers is made of an X-ray permeable semiconductor material (the plating within the semiconductor material is too thin to block X-ray penetration), while the pads and bumps 234 on the first and second wafers are made of an X-ray impenetrable material, the X-rays passing through the main body of the semiconductor material cause the corresponding portion of the X-ray sensor 22 to output different electrical signals relative to the portion that did not receive X-rays (i.e., the portion blocked by the pads and bumps), thus forming a... Figure 3 The first X-ray image 31 is shown. For example, in Figure 3 In the image, the shaded areas correspond to the parts that are not penetrated by X-rays (corresponding to the pads and bumps 234 on the wafer), and the unshaded areas correspond to the parts that are penetrated by X-rays.

[0046] Step S13: Obtain the template image and the preset threshold, and determine whether the difference between the first X-ray image 31 and the template image 41 exceeds the preset threshold. If the difference between the first X-ray image 31 and the template image 41 exceeds the preset threshold, execute step S14. If the difference between the first X-ray image 31 and the template image 41 is within the preset threshold range, execute step S15.

[0047] The template image 41 and the preset threshold can be stored in advance. For example, the template image 41 can be constructed according to the design position and size of the bumps 234, while the preset threshold can be set according to the size of the bumps 234 and the spacing between the bumps 234. In particular, the preset threshold setting method can set a preset range for the template image of the bare die, or it can set a preset range for the bumps 234 of the bare die.

[0048] Since the first wafer and the second wafer have the same structure, and the X-rays travel in a straight line, when the first wafer and the second wafer are accurately aligned, the conductive materials 231, 241 and bumps 234 on the first wafer and the second wafer are in the same position. The rays generated by the X-ray generator 21 are completely blocked by the pads and bumps 234 on the second wafer 24 and cannot irradiate the conductive materials 231 and bumps 234 on the first wafer 23. The shape and size of the shadow area on the first X-ray image 31 must be the same as the shape and size of the shadow area on the template image 41. However, when the first wafer and the second wafer are not accurately aligned, part of the rays generated by the X-ray generator 21 are blocked by the conductive materials 241 and bumps 234 on the second wafer 24 and cannot reach the X-ray sensor 22, and part of the rays are blocked by the conductive materials 231 and bumps 234 on the first wafer 23 and cannot reach the X-ray sensor 22. Correspondingly, the shape of the shadow area on the first X-ray image 31 must change relative to the template image 41, and the area of ​​the shadow area will also increase. Specifically, this step involves comparing the shape and shadow area size of the first X-ray image 31 with the template image 41 to determine whether the difference between the first X-ray image 31 and the template image 41 exceeds a preset threshold. For example, it can be based on... Figure 3 The spacing and length of the two shaded blocks in the middle (i.e., Figure 3 Dimensions in the horizontal direction), width (i.e.) Figure 3 The differences between the first X-ray image 31 and the module image 41 are determined by factors such as the vertical dimension and the distance between the shadow and the border. Specifically, the shadow areas on the first X-ray image 31 and the shadow areas on the template image 41 can actually be white (light color), while other areas can be black (dark color). In practical applications, the shadow areas and other areas can also be different colors. Figure 3 The shadows in the image are only for demonstrating the imaging effect and will not be discussed further here.

[0049] Step S14: Adjust the position of the second wafer 24, that is, move the second wafer 24 in a plane perpendicular to the X-ray, and return to step S12 after the position adjustment is completed.

[0050] Specifically, the position of the second wafer 24 can be adjusted based on the difference between the first X-ray image 31 and the template image. Figure 8 , Figure 9 As shown, specifically, it can be determined based on the length of the two columns of shadow blocks on the first X-ray image 31 (i.e., Figure 8 , Figure 9 (Dimensions in the horizontal direction) Adjust the moving direction and distance of the second wafer 24. For example, when the length of the shadow block on the right is less than the length of the shadow block on the left, the second wafer 24 needs to be moved to the left; when the length of the shadow block on the left is greater than the length of the shadow block on the left, the second wafer 24 needs to be moved to the right.

[0051] Step S15: Stop adjusting the position of the second wafer 24, that is, stop moving the second wafer 24 in the plane perpendicular to the X-rays. Furthermore, the second wafer can be moved in a direction perpendicular to the X-rays so that the lower surface of the second wafer is in contact with the upper surface of the first wafer.

[0052] After the bonding of the second wafer 24 is completed, the above steps S11-S15 can be repeated to move another wafer above the second wafer 24, and obtain an X-ray image through an X-ray generator and an X-ray sensor. Then, the position of the wafer above the second wafer 24 is adjusted by comparing the X-ray image with the preset template pattern.

[0053] The aforementioned high-bandwidth memory packaging method improves the alignment accuracy of stacked wafers in the high-bandwidth memory by using an X-ray generator and X-ray sensor to form an X-ray image during the packaging process and comparing the formed X-ray image with a template image to adjust the wafer position. Compared to laser positioning, this packaging method eliminates the need for drilling holes in the wafer, and the resulting X-ray image is less susceptible to the effects of natural light. Furthermore, the intensity and duration of the X-rays output by the X-ray generator 21 can be adjusted to ensure that the output signal of the X-ray sensor 22 meets requirements such as the clarity of the X-ray image.

[0054] In one embodiment of the present invention, the steps prior to step S11 may include: moving the first wafer 23 between the X-ray generator 21 and the X-ray sensor 22, acquiring second X-ray images of several regions on the first wafer 21 through the X-ray generator 21 and the X-ray sensor 22, storing the second X-ray images as template images, and each region including at least one complete first bare die.

[0055] Specifically, after the first wafer 23 is moved between the X-ray generator 21 and the X-ray sensor 22, the X-ray generator 21 can be controlled to generate X-rays first, and then the output signal can be obtained from the X-ray sensor 22 to form a second X-ray image. That is, the template image is generated instantly by the X-ray generator 21 and the X-ray sensor 22 after the first wafer 23 is moved between them. Furthermore, to improve the subsequent alignment accuracy, the size of each X-ray generator 21 and the X-ray sensor 22 is larger than the size of a first bare die, that is, the irradiation area of ​​the X-rays generated by each X-ray generator 21 covers the size of a first bare die, and the imaging size of each X-ray sensor 22 is greater than or equal to the size of a first bare die.

[0056] Compared to the method of using a pre-stored template image, which requires continuously acquiring X-ray images of the first wafer 23 through the X-ray generator 21 and X-ray sensor 22 after the first wafer 23 is moved between the X-ray generator 21 and the X-ray sensor 22, and adjusting the position of the first wafer 23 based on the acquired X-ray images and the pre-stored template image, the above method of forming a template image in real time with the first wafer does not require precise adjustment of the position of the first wafer 23, thus simplifying the steps and saving time.

[0057] In one embodiment of the present invention, the template image can be dynamically updated. That is, when bonding the upper wafer layer, the X-ray images of all the wafers bonded below can be used as the new template image, so that the difference between the newly generated X-ray image and the template image is relatively small (e.g., color difference), which facilitates the comparison of X-ray image differences. Of course, in practical applications, the same pre-stored template image can also be used for comparison to adjust the position of the corresponding wafer when bonding each wafer layer.

[0058] In particular, combined Figure 4 As shown, in one embodiment of the present invention, the X-ray generator 21 includes three X-ray emitting heads 211, and the X-ray sensor 22 also includes three X-ray receiving units 221. That is, the first X-ray image obtained in step S12 is generated based on the output signals of the three X-ray receiving units 221 respectively. Correspondingly, the template image is also composed of three independent parts. When judging the difference, the image formed by the output signal of each X-ray receiving unit 221 needs to be compared with the three independent parts of the template image respectively, thereby improving the accuracy of alignment.

[0059] The three X-ray emitting heads 211 and three X-ray receiving units 221 are arranged in a triangular pattern, and the three X-ray emitting heads 211 and three X-ray receiving units 221 correspond to the edges of the wafers at the bonding stations. That is to say, as... Figure 5As shown, the first X-ray image obtained by the X-ray generator 21 and the X-ray sensor 22 is an image of three regions 231 on the first wafer, which are located at the edges of the first wafer. Furthermore, to improve alignment accuracy, the central angle between any two regions 231 is greater than 60°. The second X-ray image is similar to the first X-ray image.

[0060] In practical applications, the X-ray generator 21 may also include four X-ray emitting heads 211, and the X-ray sensor 22 may also include four X-ray receiving units 221, correspondingly, such as Figure 6 The first X-ray image obtained by the X-ray generator 21 and the X-ray sensor 22 is an image of four regions 231 on the first wafer, which are located at the edges of the first wafer.

[0061] Combination Figure 7 As shown, in one embodiment of the present invention, after step S14 of the above-described high-bandwidth memory packaging method, the method further includes: after the lower surface of the second wafer 24 is attached to the upper surface of the first wafer 23, a hot-pressing assembly 25 is pressed against the upper surface of the second wafer 24, and the second wafer 24 is heated, so that each second die in the second wafer 24 is bonded to the pad 233 of a first die through a bump 234. That is, by heating the second wafer 24, the bump 234 on the lower surface of each second die is melted, and after cooling, it is bonded to the corresponding pad 233 of the attached first die.

[0062] Considering that the heating area of ​​the hot-pressing component 25 may be uneven, and that the bumps 234 under the second wafer 24 may have individual differences, resulting in different melting rates of the bumps 234 on each second bare die, which may cause the second wafer to tilt and affect the bonding quality of the first wafer 23 and the second wafer 24, the above-mentioned high-bandwidth memory packaging method further includes:

[0063] During the heating of the second wafer 24 by the heating component 25, at least one third X-ray image is acquired by the X-ray generator 21 and the X-ray sensor 22 at a preset frequency, and the heating temperature of different heating areas of the heating component is adjusted when the difference between the third X-ray image and the template image exceeds the preset range.

[0064] Specifically, to facilitate the imaging of the third X-ray image, the aforementioned hot-pressing assembly 25 may be made of an X-ray-permeable material, or locally (e.g., in the area corresponding to the X-ray generator 21 and the X-ray sensor 22) may be made of an X-ray-permeable material. Furthermore, the X-ray emission head 211 of the X-ray generator 21 may also be integrated onto the hot-pressing assembly 25.

[0065] In one embodiment of the present invention, adjusting the heating temperature of different heating regions of the heating component according to the third X-ray image specifically includes:

[0066] When the movement of the third X-ray image relative to the template image in any direction exceeds the preset range, the temperature on the heating component on the same side as the movement direction of the third X-ray image relative to the template image is reduced, or the temperature on the heating component on the opposite side of the movement direction of the third X-ray image relative to the template image is increased.

[0067] Specifically, since the range of the X-ray images acquired by the X-ray generator 21 and the X-ray sensor 22 is a fixed value, the total width of the resulting third X-ray image is the same as the total width of the template image. When the bump 234 on the right side of the lower surface of the second wafer 24 melts first, the second wafer 24 tilts to the right due to the reduced support force on the right side, thereby increasing the width of the shadow block in the third X-ray image. Simultaneously, the distance between the shadow of the right column and the right edge is less than the distance between the shadow of the left column and the left edge on the template image. Figure 8 As shown, the third X-ray image moves to the right relative to the template image. At this point, the heating temperature of the right region on the heating assembly 25 needs to be reduced, or the heating temperature of the left region on the heating assembly 25 needs to be increased to balance the heating temperature of the second wafer 24 and prevent the second wafer 24 from tilting during hot pressing, which could lead to bonding errors. When the bump 234 on the left side of the lower surface of the second wafer 24 melts first, the second wafer 24 tilts to the left due to the reduced support force on the left side. This results in an increase in the width of the shadow block in the third X-ray image. Simultaneously, the distance between the shadow in the left column and the left edge is less than the distance between the shadow in the right column and the right edge on the template image. Figure 9 As shown, when the third X-ray image moves to the left relative to the template image, the heating temperature of the left region of the heating component 25 needs to be reduced, or the heating temperature of the right region of the heating component 25 needs to be increased, in order to balance the heating temperature of the second wafer 24 and prevent the second wafer 24 from tilting during hot pressing, which could lead to bonding errors. The operation when the third X-ray image moves in other directions is similar to the above and will not be described again here.

[0068] In one embodiment of the present invention, the packaging method for the high-bandwidth memory may further include: removing the hot-pressing assembly 25 after the second bare die 24 and the first bare die 23 are bonded, acquiring a fourth X-ray image through an X-ray generator 21 and an X-ray sensor 22, and outputting an alarm signal when the difference between the fourth X-ray image and the template image exceeds a preset range, and continuing subsequent packaging operations when the difference between the fourth X-ray image and the template image is within the preset range. This method ensures that the bonded first and second wafers meet quality requirements.

[0069] The present invention also provides a high-bandwidth memory packaging system, including a memory and a processor, wherein the memory stores a computer program executable by the processor, and the processor executes the computer program to implement the steps of the high-bandwidth memory packaging method described above.

[0070] The high-bandwidth memory packaging system in this embodiment is the same as described above. Figure 1-9 The packaging methods for high-bandwidth memory in the corresponding embodiments belong to the same concept. The specific implementation process can be found in the corresponding method embodiments. The technical features in the method embodiments are also applicable to this device embodiment, and will not be repeated here.

[0071] The present invention also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the steps of the high-bandwidth memory encapsulation method described above.

[0072] The computer-readable storage medium in this embodiment is the same as described above. Figure 1-9 The packaging methods for high-bandwidth memory in the corresponding embodiments belong to the same concept. The specific implementation process can be found in the corresponding method embodiments. The technical features in the method embodiments are also applicable to this device embodiment, and will not be repeated here.

[0073] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0074] Those skilled in the art will understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the functions can be assigned to different functional units and modules as needed. The functional units and modules in the embodiments can be integrated into a single processor, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated units can be implemented in hardware or as software functional units. Furthermore, the specific names of the functional units and modules are merely for easy differentiation and are not intended to limit the scope of protection of this application. The specific working processes of the units and modules in the above system can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0075] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0076] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0077] In the embodiments provided in this application, it should be understood that the disclosed high-bandwidth memory packaging method and system can be implemented in other ways. For example, the high-bandwidth memory packaging system embodiments described above are merely illustrative.

[0078] Furthermore, the functional units in the various embodiments of this application can be integrated into a single processor, or each unit can exist physically separately, or two or more units can be integrated into a single unit. The integrated units described above can be implemented in hardware or as software functional units.

[0079] If the integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or interface switching device capable of carrying the computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium, etc.

[0080] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made within the scope of knowledge possessed by those skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. A packaging method for a high-bandwidth memory, characterized in that, The method includes: (a) The second wafer is moved above the first wafer, and both the first wafer and the second wafer are located between the X-ray generator and the X-ray sensor; the main body of the first wafer and the second wafer is made of an X-ray permeable semiconductor material, and the first wafer and the second wafer are respectively provided with a plurality of through-silicon vias, each through-silicon via being filled with a conductive material that cannot be penetrated by X-rays. (b) Acquire first X-ray images of the first wafer and the second wafer using the X-ray generator and the X-ray sensor; (c) When the difference between the first X-ray image and the template image exceeds a preset threshold, adjust the position of the second wafer and return to step (b); and when the difference between the first X-ray image and the template image is within the preset threshold range, stop adjusting the position of the second wafer. The procedure preceding step (a) also includes: The first wafer is moved between the X-ray generator and the X-ray sensor; The X-ray generator and X-ray sensor acquire second X-ray images of several regions on the first wafer, and store the second X-ray images as template images, wherein each region includes at least one complete first bare die; Step (c) is followed by: after the bonding of the second wafer is completed, moving another wafer above the second wafer, obtaining an X-ray image through an X-ray generator and an X-ray sensor, and then adjusting the position of the other wafer by comparing the X-ray image with the first X-ray image.

2. The packaging method for a high-bandwidth memory according to claim 1, characterized in that, The method further includes: After the lower surface of the second wafer is attached to the upper surface of the first wafer, the hot pressing assembly abuts against the upper surface of the second wafer and heats the second wafer, so that each second bare die in the second wafer is bonded to the pad of a first bare die through a bump.

3. The packaging method for a high-bandwidth memory according to claim 2, characterized in that, The method further includes: During the heating of the second wafer by the heating component, at least one third X-ray image is acquired by an X-ray generator and an X-ray sensor at a preset frequency, and the heating temperature of different heating areas of the heating component is adjusted when the difference between the third X-ray image and the template image exceeds a preset range.

4. The packaging method for a high-bandwidth memory according to claim 3, characterized in that, The step of adjusting the heating temperature of different heating areas of the heating component when the difference between the third X-ray image and the template image exceeds a preset range includes: When the movement of the third X-ray image relative to the template image in any direction exceeds the preset range, the temperature on the heating component on the same side as the movement direction of the third X-ray image relative to the template image is reduced, or the temperature on the heating component on the opposite side of the movement direction of the third X-ray image relative to the template image is increased.

5. The packaging method for a high-bandwidth memory according to claim 2, characterized in that, The method further includes: After the second bare die is bonded to the first bare die, the hot-pressing assembly is removed, and a fourth X-ray image is obtained through an X-ray generator and an X-ray sensor; An alarm signal is output when the difference between the fourth X-ray image and the template image exceeds a preset range.

6. The packaging method for a high-bandwidth memory according to claim 2, characterized in that, The first and second bare dies each have a plurality of through-silicon vias, and each through-silicon via is filled with a conductive material that cannot be penetrated by X-rays.

7. The packaging method for a high-bandwidth memory according to claim 1, characterized in that, The X-ray generator includes three X-ray emitting heads, and the X-ray sensor includes three X-ray receiving units. The three X-ray emitting heads and the three X-ray receiving units correspond to the edges of the first wafer, and the central angle between any two X-ray emitting heads is greater than 60°.

8. A packaging system for a high-bandwidth memory, characterized in that, The device includes a memory and a processor, wherein the memory stores a computer program executable by the processor, and the processor executes the computer program to implement the steps of the high-bandwidth memory packaging method as described in any one of claims 1-7.

9. A computer-readable storage medium, characterized in that, The storage medium stores a computer program, which, when executed by a processor, implements the steps of the high-bandwidth memory packaging method as described in any one of claims 1 to 7.

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