Coating tools and cutting tools

Abstract

The coated tool of the present disclosure has a substrate containing WC-based cemented carbide in which WC particles are a hard phase component and Co is a main component of a binder phase; a coating layer on the substrate; and an intermediate layer between the substrate and the coating layer. The intermediate layer contains Ti and has an average layer thickness of 1 nm or more and 15 nm or less. The coating layer has a first coating layer in contact with the intermediate layer. The first coating layer has at least one element selected from the group consisting of Al, a Group 5 element, a Group 6 element, and a Group 4 element other than Ti, at least one element selected from the group consisting of C and N, and Si and Cr.

Description

Technical Field

[0001] This disclosure relates to covering tools and cutting tools. Background Technology

[0002] As tools used in cutting processes such as turning and milling, there are known covered tools that improve wear resistance by coating the surface of substrates such as cemented carbide, cermet, and ceramic with a coating layer.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: JP Patent No. 6773287

[0006] Patent Document 2: JP Patent No. 4330859 Summary of the Invention

[0007] One aspect of the covering tool disclosed herein comprises: a substrate comprising a WC-based cemented carbide with WC particles as the hard phase and Co as the binding phase; a covering layer located on the substrate; and an intermediate layer located between the substrate and the covering layer. The intermediate layer contains Ti and has an average layer thickness of 1 nm or more and 15 nm or less. The covering layer has a first covering layer in contact with the intermediate layer. The first covering layer comprises at least one element selected from the group consisting of Al, Group 5 elements, Group 6 elements, and Group 4 elements excluding Ti, at least one element selected from the group consisting of C and N, and Si and Cr. Attached Figure Description

[0008] Figure 1 This is a perspective view showing an example of a covering tool involved in the implementation method.

[0009] Figure 2 This is a side sectional view showing an example of the covering tool 1 involved in the implementation.

[0010] Figure 3 This is a cross-sectional view showing an example of the cover layer 20 involved in the implementation.

[0011] Figure 4 yes Figure 3 An enlarged schematic diagram of section H is shown.

[0012] Figure 5 This is a schematic diagram used to illustrate the Al, Cr, and Si contents of the first and second layers.

[0013] Figure 6 It is a schematic enlarged view of the interface area between the substrate and the first cover layer.

[0014] Figure 7This is a front view showing an example of a cutting tool involved in the implementation method.

[0015] Figure 8 This is a table summarizing the manufacturing conditions of the coatings possessed by samples No.1 to No.19.

[0016] Figure 9 This is a table showing the structure of the covering layer possessed by samples No.1 to No.19.

[0017] Figure 10 It is a table summarizing the results of oxidation tests, wear tests, and peel tests on samples No.1 to No.19.

[0018] Figure 11 It is a scanning transmission electron microscope image (HAADF-STEM image) of the first covering layer involved in the implementation method.

[0019] Figure 12 It is a graph showing the changes in Al, Cr, Si, and N content along the stacking direction of the first and second layers.

[0020] Figure 13 These are scanning transmission electron microscope images of the covering tool involved in the embodiments.

[0021] Figure 14 It is the WC mapping image of the overlay tool involved in the embodiment.

[0022] Figure 15 It is the Co-mapping image of the overlay tool involved in the embodiment.

[0023] Figure 16 It is the Ti mapping image of the overlay tool involved in the embodiment.

[0024] Figure 17 This is a graph showing the extraction range on WC and the extraction range on Co.

[0025] Figure 18 This is a chart showing the results of Ti content determination within the extraction range on WC and the extraction range on Co. Detailed Implementation

[0026] Hereinafter, the methods for implementing the covering tool and cutting tool of this disclosure (hereinafter referred to as "Embodiments") will be described in detail with reference to the accompanying drawings. However, the covering tool and cutting tool of this disclosure are not limited to this embodiment. Furthermore, the various embodiments can be appropriately combined without contradicting the processing content. In addition, in the following embodiments, the same reference numerals are used to label the same parts, and repeated descriptions are omitted.

[0027] Furthermore, in the embodiments shown below, expressions such as "fixed," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these expressions do not need to be strictly "fixed," "orthogonal," "perpendicular," or "parallel." That is, the above expressions, for example, allow for deviations in manufacturing precision, setting precision, etc.

[0028] In the aforementioned prior art, there is room for further improvement in enhancing the adhesion between the coating layer and the substrate.

[0029] <Overlay Tools>

[0030] Figure 1 This is a perspective view showing an example of the covering tool involved in the implementation method. Furthermore, Figure 2 This is a side sectional view showing an example of the covering tool 1 involved in the embodiment. For example... Figure 1 As shown, the covering tool 1 involved in the embodiment has a blade body 2.

[0031] (Cutter head body 2)

[0032] The cutter head body 2, for example, has an upper surface and a lower surface (with) Figure 1 The shape of the surfaces intersecting the Z-axis shown is a parallelogram-shaped hexahedron.

[0033] One corner of the cutter head body 2 functions as a cutting edge. The cutting edge has a first surface (e.g., an upper surface) and a second surface (e.g., a side surface) connected to the first surface. In an embodiment, the first surface functions as a "front face" that scoops up the chips generated by cutting, and the second surface functions as a "rear face". The cutting edge is located at least a portion of the edge line where the first and second surfaces intersect, and the covering tool 1 cuts the workpiece by bringing the cutting edge into contact with the workpiece.

[0034] The through hole 5, which runs vertically through the main body 2, is located in the center of the main body 2. A screw 75 is inserted into the through hole 5 to mount the cover tool 1 to the retainer 70 described later (see reference). Figure 7 ).

[0035] like Figure 2 As shown, the cutter head body 2 has a base 10 and a covering layer 20.

[0036] (Matrix 10)

[0037] The matrix 10 is formed, for example, of a cemented carbide. The cemented carbide contains W (tungsten), specifically WC (tungsten carbide). In addition, the cemented carbide may also contain Ni (nickel) or Co (cobalt). Specifically, the matrix 10 is composed of a WC-based cemented carbide with WC particles as the hard phase component and Co as the main component of the bonding phase.

[0038] (Covering layer 20)

[0039] The covering layer 20 is applied to the substrate 10 for purposes such as improving its wear resistance and heat resistance. Figure 2 In this example, the cover layer 20 completely covers the substrate 10. The cover layer 20 only needs to be located at least above the substrate 10. When the cover layer 20 is located on the first surface (here, the upper surface) of the substrate 10, the first surface has high wear resistance and heat resistance. When the cover layer 20 is located on the second surface (here, the side surface) of the substrate 10, the second surface has high wear resistance and heat resistance.

[0040] Here, refer to Figure 3 as well as Figure 4 The specific structure of the cover layer 20 is explained. Figure 3 This is a cross-sectional view showing an example of the cover layer 20 involved in the embodiment. Furthermore, Figure 4 yes Figure 3 An enlarged schematic diagram of section H is shown.

[0041] like Figure 3 As shown, the cover layer 20 has a first cover layer 23 located above the intermediate layer 22 and a second cover layer 24 located above the first cover layer 23.

[0042] The first capping layer 23 has at least one element selected from the group consisting of Al, Group 5 elements, Group 6 elements and Group 4 elements excluding Ti, at least one element selected from the group consisting of C and N, and Si and Cr.

[0043] Specifically, the first capping layer 23 may also contain Al, Cr, Si, and N. That is, the first capping layer 23 may also be an AlCrSiN layer containing AlCrSiN nitrides as Al, Cr, and Si. In addition, the expression "AlCrSiN" means that Al, Cr, Si, and N exist in any proportion, and does not necessarily mean that Al, Cr, Si, and N exist in a 1:1:1:1 ratio.

[0044] Thus, by placing the first capping layer 23 containing a metal (e.g., Si) on top of the intermediate layer 22 (described later), the adhesion between the intermediate layer 22 and the capping layer 20 is high. Consequently, the capping layer 20 is difficult to peel off from the intermediate layer 22, and therefore the capping layer 20 has high durability.

[0045] When the first capping layer 23 contains Al, Cr, Si and N, the proportion of Al in the metal elements of the first capping layer 23 may be 38 atomic% or more and 55 atomic% or less, the proportion of Cr in the metal elements of the first capping layer 23 may be 33 atomic% or more and 48 atomic% or less, and the proportion of Si in the metal elements of the first capping layer 23 may be 4 atomic% or more and 15 atomic% or less.

[0046] The covering tool 1 with the first covering layer 23 having this structure has excellent oxidation resistance.

[0047] like Figure 4 As shown, the first cover layer 23 has a plurality of first layers 23a and a plurality of second layers 23b. The first cover layer 23 has a striped structure in which the first layers 23a and the second layers 23b are alternately stacked in the thickness direction. The second layers 23b are formed on the first layers 23a.

[0048] The thicknesses of the first layer 23a and the second layer 23b can be set to less than 50 nm each. The relatively thin first layer 23a and the second layer 23b have low residual stress and are less prone to peeling, cracks, etc., thus increasing the durability of the capping layer 20.

[0049] The second capping layer 24 may also contain Ti, Si, and N. That is, the second capping layer 24 may also be a nitride layer (TiSiN layer) containing Ti and Si. In addition, the description of "TiSiN layer" means that Ti, Si, and N exist in any proportion, and does not necessarily mean that Ti, Si, and N exist in a 1:1:1 ratio.

[0050] Therefore, for example, when the coefficient of friction of the second coating layer 24 is low, the corrosion resistance of the coated tool 1 can be improved. Furthermore, for example, when the hardness of the second coating layer 24 is high, the wear resistance of the coated tool 1 can be improved. Furthermore, for example, when the oxidation initiation temperature of the second coating layer 24 is high, the oxidation resistance of the coated tool 1 can be improved.

[0051] The second capping layer 24 may also have a striped structure with at least two layers located in the thickness direction. Each layer of the striped structure of the second capping layer 24 may contain, for example, Ti, Si, and N. In this case, the content of Ti (hereinafter referred to as "Ti content"), Si (hereinafter referred to as "Si content"), and N (hereinafter referred to as "N content") of the second capping layer 24 may be repeatedly increased or decreased along the thickness direction of the second capping layer 24. The total content of Ti and Si in the second capping layer 24 may be 98 atomic percent or more. Furthermore, the second capping layer 24 may also have a third and a fourth layer alternately arranged in the thickness direction.

[0052] Figure 5 This is a schematic diagram used to illustrate the Al, Cr, and Si contents of the first layer 23a and the second layer 23b.

[0053] The first layer 23a and the second layer 23b contain Al, Cr, Si, and N. Here, the Al content in the first layer 23a is defined as the first Al content, the Cr content in the first layer 23a is defined as the first Cr content, and the Si content in the first layer 23a is defined as the first Si content. Furthermore, the Al content in the second layer 23b is defined as the second Al content, the Cr content in the second layer 23b is defined as the second Cr content, and the Si content in the second layer 23b is defined as the second Si content.

[0054] In this case, the first Al content can be greater than the second Al content, the first Cr content can be less than the second Cr content, and the first Si content can be greater than the second Si content.

[0055] The covering tool 1 with the first covering layer 23 having this structure has high hardness and excellent resistance to damage.

[0056] Alternatively, the difference between the Al content of the first layer 23a and the Al content of the second layer 23b may be more than 1 atomic% and less than 9 atomic%; the difference between the Cr content of the first layer 23a and the Cr content of the second layer 23b may be more than 1 atomic% and less than 12 atomic%; and the difference between the Si content of the first layer 23a and the Si content of the second layer 23b may be more than 0.5 atomic% and less than 5 atomic%.

[0057] The covering tool 1 with the first covering layer 23 having this structure maintains high oxidation resistance and high hardness, and also alleviates the stress inside the coating, exhibiting excellent wear resistance.

[0058] (Manufacturing method of the cover layer)

[0059] The capping layer can be formed, for example, by physical vapor deposition. Examples of physical vapor deposition methods include ion plating and sputtering. As an example, when using ion plating to create a capping layer, the capping layer can be created by the following method.

[0060] First, an example of a method for fabricating the first capping layer by ion plating is shown. First, as an example, metal targets of Cr, Si, and Al, or composite alloy targets or sintered targets, are prepared.

[0061] Next, the target, which serves as the metal source, is evaporated and ionized using methods such as arc discharge or glow discharge. The ionized metal then reacts with nitrogen gas (N2) or a nitrogen source and is deposited onto the surface of the substrate. Through these steps, an AlCrSiN layer can be formed.

[0062] In the above steps, the temperature of the substrate can be set to 500-600℃, the nitrogen pressure to 1.0-6.0Pa, a DC bias voltage of -50 to -200V can be applied to the substrate, and the arc discharge current can be set to 100-200A.

[0063] The composition of the first capping layer can be adjusted by independently controlling the voltage / current values ​​during arc discharge / glow discharge for each of the aluminum metal target, chromium metal target, aluminum-silicon composite alloy target, and chromium-silicon composite alloy target. Furthermore, the composition of the capping layer can also be adjusted by controlling the capping time and atmospheric gas pressure. In one embodiment, the ionization amount of the target metal can be varied by changing the voltage / current values ​​during arc discharge / glow discharge. Furthermore, the ionization amount of the target metal can be periodically varied by periodically changing the current value during arc discharge / glow discharge for each target. The current value during arc discharge / glow discharge of the target is periodically changed from 0.01 to 0.5 min, thereby periodically varying the ionization amount of the target metal. Thus, the content ratio of each metal element in the thickness direction of the capping film can be configured to vary periodically.

[0064] In performing the above steps, the composition of Al, Si, and Cr is changed by reducing the amount of Al and Si and increasing the amount of Cr. Then, the composition of Al, Si, and Cr is changed by increasing the amount of Al and Si and decreasing the amount of Cr, thereby enabling the fabrication of a first capping layer having a first layer and a second layer.

[0065] Next, an example of a method for manufacturing the second capping layer as the TiSiN layer will be described.

[0066] Similar to the first capping layer, the second capping layer can also be formed by physical vapor deposition. As an example, firstly, a Ti metal target and a Ti-Si composite alloy target are prepared. Furthermore, by independently controlling the voltage / current values ​​applied to each prepared target during arc discharge / glow discharge, a second capping layer with a striped structure can be fabricated.

[0067] In the above steps, the temperature of the substrate can be set to 500-600℃, the nitrogen pressure to 1.0-6.0Pa, a DC bias voltage of -50 to -200V can be applied to the substrate, the arc discharge current can be set to 100-200A, and the arc current variation period can be set to 0.01-0.5min.

[0068] (Middle layer 22)

[0069] Intermediate layer 22 may also be located between substrate 10 and cover layer 20. Specifically, intermediate layer 22 is in contact with the upper surface of substrate 10 on one side (the lower surface in this case) and with the lower surface of cover layer 20 (first cover layer 23) on the other side (the upper surface in this case).

[0070] The intermediate layer 22 has a higher adhesion to the substrate 10 than the capping layer 20. Examples of metallic elements possessing this property include Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, Si, Y, and Ti. The intermediate layer 22 contains at least one of the aforementioned metallic elements. For example, the intermediate layer 22 may also contain Ti. Furthermore, while Si is a half-metal element, in this specification, half-metal elements are also included among metallic elements.

[0071] When the intermediate layer 22 contains Ti, the Ti content in the intermediate layer 22 can be 1.5 atomic% or more. For example, the Ti content in the intermediate layer 22 can be 2.0 atomic% or more.

[0072] The intermediate layer 22 may also contain metallic elements other than those mentioned above (Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, Si, Y, Ti). From the viewpoint of good adhesion to the substrate 10, the intermediate layer 22 may contain at least 95 atomic% of the aforementioned metallic elements in total. More preferably, the intermediate layer 22 contains at least 98 atomic% of the aforementioned metallic elements in total. Furthermore, the proportion of metallic components in the intermediate layer 22 can be determined, for example, by analysis using an EDS (energy dispersive X-ray spectrometer) attached to a STEM (scanning transmission electron microscope).

[0073] Thus, in the covering tool 1 according to the embodiment, by providing an intermediate layer 22 between the substrate 10 and the covering layer 20, which has a higher wettability to the substrate 10 than the covering layer 20, the adhesion between the substrate 10 and the covering layer 20 can be improved. In addition, the adhesion between the intermediate layer 22 and the covering layer 20 is also high, so it is less likely that the covering layer 20 will peel off from the intermediate layer 22.

[0074] In addition, the thickness of the intermediate layer 22 can be, for example, greater than 0.1 nm and less than 20 nm.

[0075] Figure 6 This is a schematic enlarged view of the interface area between the substrate 10 and the first cover layer 23. Figure 6 The image shows the interface region between the substrate 10 and the first cover layer 23 in a cross section perpendicular to the surface of the substrate 10.

[0076] like Figure 6As shown, the intermediate layer 22 located at the interface region between the substrate 10 and the first capping layer 23 is mostly located on the WC particles 10a contained in the substrate 10 and the WC particles 10a in the binding phase 10b.

[0077] Specifically, the maximum value (atm%) of Ti obtained from elemental analysis in the direction transversely from the first capping layer 23 to the WC particles 10a is set as the Ti(WC) value, and the maximum value (atm%) of Ti obtained from elemental analysis in the direction transversely from the first capping layer 23 to the binding phase 10b is set as the Ti(Co) value. Furthermore, the ratio of the Ti(WC) value to the Ti(Co) value (Ti(Co) value / Ti(WC) value) is set as the Ti(Co / WC) ratio. In this case, the Ti(Co / WC) ratio of the capping tool 1 according to the embodiment is 0.8 or less.

[0078] Conventionally, there is room for improvement in the adhesion between the first capping layer, which includes at least one element selected from the group consisting of Al, Cr, Si, Group 5 elements, Group 6 elements, and Group 4 elements excluding Ti, and at least one element selected from the group consisting of C and N, and the WC particles. On the other hand, Ti has good adhesion to both the first capping layer and the WC particles. Therefore, as in the capping tool 1 according to the embodiment, by introducing an intermediate layer 22 including Ti between the first capping layer 23 and the WC particles 10a, the adhesion between the substrate 10 and the first capping layer 23 can be improved.

[0079] The intermediate layer 22 having the above structure can be obtained, for example, by the following manufacturing method.

[0080] (Manufacturing method of the intermediate layer)

[0081] 8×10 -3 ~1×10 -4 The substrate was heated under reduced pressure (Pa) to a surface temperature of 500–600 °C. Next, argon gas was introduced as the atmosphere gas, maintaining the pressure at 3.0 Pa. Then, the bias voltage was set to -400 V, and argon bombardment was performed for 11 minutes. Next, the pressure was reduced to 0.1 Pa, and an arc current of 130–160 A was applied to the Ti metal evaporation source for 0.3 minutes, forming a Ti-containing layer as an intermediate layer on the substrate surface.

[0082] <Argon bombardment pretreatment conditions 1>

[0083] (1) Bias voltage: -400V

[0084] (2) Pressure: 3 Pa

[0085] (3) Processing time: 11 minutes

[0086] <Film Formation Conditions Containing Ti Layer 1>

[0087] (1) Arc current: -100 to -200A

[0088] (2) Bias voltage: -380 to -430V

[0089] (3) Pressure: 0.1 Pa

[0090] (4) Processing time: 0.3 minutes

[0091] Ti-containing layers may also contain other metal elements based on diffusion. Ti-containing layers may also contain 50–95 atomic percent of metal elements other than Ti.

[0092] Furthermore, the bonding between the Co-containing binding phase and Ti is poor. Therefore, if the amount of Ti located on the Co-containing binding phase is as small as possible, the overall bonding strength between the matrix and the capping layer is improved. Therefore, as in the capping tool 1 according to the embodiment, by adopting a structure in which more Ti in the WC particles 10a contained in the matrix 10 and the binding phase 10b are located on the WC particles 10a, the bonding strength between the matrix 10 and the first capping layer 23 can be improved, thereby improving the wear resistance and chip resistance of the capping tool 1.

[0093] Furthermore, in a cross section perpendicular to the surface of the substrate 10, at least a portion of the bonding phase 10b may also be in contact with the first cover layer 23.

[0094] The adhesion between the first capping layer containing at least one element selected from the group consisting of Al, Cr, Si, Group 5 elements, Group 6 elements, and Group 4 elements excluding Ti, and the bonding phase including Co is superior to the adhesion between the bonding phase containing Co and Ti. Therefore, in the case where at least a portion of the bonding phase 10b is in contact with the first capping layer 23, the adhesion between the substrate 10 and the first capping layer 23 can be further improved, and the wear resistance and chip resistance of the capping tool 1 can be further improved.

[0095] The intermediate layer 22 having the above structure can also be manufactured, for example, under the following conditions.

[0096] <Argon bombardment pretreatment conditions 2>

[0097] (1) Bias voltage: -400V

[0098] (2) Pressure: 3 Pa

[0099] (3) Processing time: 11 minutes

[0100] <Film Formation Conditions Containing Ti Layer 2>

[0101] (1) Arc current: 100~200A

[0102] (2) Bias voltage: -380 to -430V

[0103] (3) Pressure: 0.1 Pa

[0104] (4) Processing time: 0.3 minutes

[0105] <Argon bombardment post-treatment conditions 2>

[0106] (1) Bias voltage: -200V

[0107] (2) Pressure: 3 Pa

[0108] (3) Processing time: 1 minute

[0109] The film formation condition 2 containing the Ti layer and the post-treatment condition 2 with argon bombardment were alternately repeated more than once.

[0110] Furthermore, the thickness of the intermediate layer 22 on the WC particle 10a, including the Ti region in the interface region, can be greater than 1 nm and less than 15 nm.

[0111] If the thickness of the intermediate layer 22 is 1 nm or more, the adhesion between the first capping layer 23 and the WC particles 10a can be further enhanced. If the thickness of the intermediate layer 22 is 15 nm or less, the generation and development of cracks from the intermediate layer 22 can be suppressed. Therefore, by setting the thickness of the intermediate layer 22 on the WC particles 10a to be 1 nm or more and 15 nm or less, the adhesion between the substrate 10 and the first capping layer 23 can be further improved, and the wear resistance and damage resistance of the covering tool 1 can be further improved.

[0112] The intermediate layer 22 having the above structure can be manufactured, for example, under the following conditions.

[0113] <Argon bombardment pretreatment conditions 3>

[0114] (1) Bias voltage: -400V

[0115] (2) Pressure: below 3 Pa

[0116] (3) Processing time: 11 minutes

[0117] <Film Formation Conditions Containing Ti Layer 3>

[0118] (1) Arc current: 100A to 180A and below

[0119] (2) Bias voltage: -400V

[0120] (3) Pressure: 0.1 Pa

[0121] (4) Processing time: 0.3 minutes

[0122] <Argon bombardment post-treatment condition 3>

[0123] (1) Bias voltage: -200V

[0124] (2) Pressure: 3 Pa

[0125] (3) Processing time: 1 minute

[0126] The film formation condition 3 containing the Ti layer and the argon bombardment post-treatment condition 3 were alternately repeated more than once and less than 20 times.

[0127] <Cutting Tools>

[0128] Next, refer to Figure 7 The structure of the cutting tool having the aforementioned covering tool 1 will be described. Figure 7 This is a front view showing an example of a cutting tool involved in the implementation method.

[0129] like Figure 7 As shown, the cutting tool 100 according to the embodiment has a covering tool 1 and a retainer 70 for fixing the covering tool 1.

[0130] Cage 70 is from the first end ( Figure 7 The upper end of the middle) faces the second end ( Figure 7 A rod-shaped member extending from the lower end of the cage. The cage 70 is made of, for example, steel or cast iron. High-toughness steel is particularly preferred for these components.

[0131] The retainer 70 has a pocket 73 at its first end. The pocket 73 is for mounting the cover tool 1 and has a seat surface intersecting the rotation direction of the material being cut and a constraint side inclined relative to the seat surface. A screw hole for screwing in the screw 75, which will be described later, is provided on the seat surface.

[0132] The cover tool 1 is located in the pocket 73 of the retainer 70 and is mounted to the retainer 70 by a screw 75. That is, the screw 75 is inserted into the through hole 5 of the cover tool 1, and the front end of the screw 75 is inserted into the threaded hole formed in the seat surface of the pocket 73, so that the threads are screwed together. Thus, the cover tool 1 is mounted to the retainer 70 with its cutting edge portion protruding outward from the retainer 70.

[0133] In the embodiment, a cutting tool for so-called turning is illustrated. Examples of turning include internal diameter machining, external diameter machining, and grooving. However, the cutting tool is not limited to tools used in turning. For example, the cover tool 1 can be used as a cutting tool in milling. Examples of cutting tools for milling include end mills, face mills, side mills, grooving mills, single-flute end mills, multi-flute end mills, tapered end mills, ball end mills, etc.

[0134] Example

[0135] The embodiments of this disclosure will be described in detail below. However, this disclosure is not limited to the embodiments shown below.

[0136] Samples No. 1 to No. 19, with a capping layer on a substrate containing WC-based cemented carbide, were prepared. The presence or absence of a striped structure, and the Al, Cr, and Si contents were determined. The preparation conditions for the intermediate layer of samples No. 2 to No. 19 are as follows: Figure 8 As shown. Furthermore, among samples No. 1 to No. 19, samples No. 2 to No. 5 and No. 7 to No. 14 correspond to embodiments of this disclosure, while samples No. 1, No. 6, and No. 15 to No. 19 correspond to comparative examples. In addition, Figure 8 The manufacturing conditions of the intermediate layer shown, namely the "coverage time", are equivalent to the "processing time" under the film formation conditions containing the Ti layer mentioned above.

[0137] Figure 9 This is a table showing the structure of the covering layer possessed by samples No.1 to No.19. For example... Figure 9 As shown, sample No. 1 does not have an intermediate layer between the substrate and the first capping layer. In contrast, samples No. 2 to No. 19 have an intermediate layer between the substrate and the first capping layer. Among them, samples No. 2 to No. 18 have an intermediate layer containing Ti, and sample No. 19 has an intermediate layer containing Cr. The thickness (average thickness) of the intermediate layers of samples No. 2 to No. 19 are as follows: sample No. 2 is 0.1 nm, sample No. 3 is 1 nm, sample No. 4 is 8 nm, sample No. 5 is 15 nm, sample No. 6 is 18 nm, samples No. 7 to No. 14 are 8 nm, sample No. 15 is 5 nm, sample No. 16 is 3 nm, sample No. 17 is 5 nm, sample No. 18 is 10 nm, and sample No. 19 is 2 nm.

[0138] Samples No. 1 to No. 14 have a first capping layer (AlCrSiN layer) containing Al, Cr, Si, and N. The average composition of the AlCrSiN layer in samples No. 1 to No. 14 is (Al50 Cr 39 Si 11 N. The first covering layer of these samples has a striped structure with alternating first and second layers.

[0139] The first capping layer of samples No. 15 to No. 19 does not have a striped structure. The composition of the first capping layer of samples No. 15 to No. 19 is as follows: Sample No. 15 is (Al... 50 Cr 50 N, sample No. 16 is (Ti 50 Al 50 N, sample No. 17 is (Ti 50 Al 40 Si 10 Sample No. 18 is TiN, and sample No. 19 is (Al) N. 55 CTi 25 Cr 15 Si3Y2)N.

[0140] For samples No.1 to No.14 with striped structures, the difference between the Al content in the first layer and the Al content in the second layer (Al content difference) are 6 atomic%, 6 atomic%, 6 atomic%, 6 atomic%, 6 atomic%, 6 atomic%, 2 atomic%, 4 atomic%, 6 atomic%, 8 atomic%, 9 atomic%, 10 atomic%, 9 atomic%, and 6 atomic%, respectively.

[0141] For samples No.1 to No.14 with striped structures, the difference between the Cr content in the first layer and the Cr content in the second layer (Cr content difference) are 8 atomic%, 8 atomic%, 8 atomic%, 8 atomic%, 8 atomic%, 8 atomic%, 3 atomic%, 6 atomic%, 9 atomic%, 12 atomic%, 11 atomic%, 11 atomic%, 13 atomic%, and 12 atomic%, respectively.

[0142] For samples No.1 to No.14 with striped structures, the difference between the Si content in the first layer and the Si content in the second layer (Si content difference) are 2 atomic%, 2 atomic%, 2 atomic%, 2 atomic%, 2 atomic%, 2 atomic%, 1 atomic%, 2 atomic%, 3 atomic%, 4 atomic%, 2 atomic%, 1 atomic%, 4 atomic%, and 6 atomic%.

[0143] Figure 10 This table summarizes the results of oxidation, wear, and peel tests on samples No. 1 through No. 19. The test conditions for oxidation, wear, and peel tests are as follows.

[0144] <Oxidation Test>

[0145] For the AlCr-based coatings of samples No.1 to No.15, the following oxidation test was performed: the platinum wire was subjected to a given intermediate layer formation treatment, and then a film was formed with a coating thickness of 3 μm. The resulting coated platinum wire was kept in the atmosphere at 1000°C for 1 hour.

[0146] For the Ti-based coatings of samples No.16 to No.19, the following oxidation test was performed: a given intermediate layer formation treatment was performed on the platinum wire, and then a film was formed with a coating thickness of 3 μm. The resulting coated platinum wire was kept in the atmosphere at 800°C for 1 hour.

[0147] The platinum wire after the experiment was cross-sectioned, and the film state was observed from the cross-section to determine the thickness of the oxide film. Furthermore, a smaller oxide film thickness indicates better oxidation resistance.

[0148] Wear Test

[0149] The wear test was conducted using a 2-flute carbide ball end mill (model: 2KMBL0200-0800-S4) under the following conditions.

[0150] (1) Cutting method: Hole-making

[0151] (2) Material to be cut: SKD11H

[0152] (3) Feed rate fz: 1320 mm / min

[0153] (4) Incision: ap 0.08mm × ae 0.20mm

[0154] (5) Evaluation method: The wear width of the side face after cutting 20m was measured with a microscope.

[0155] <Peeling Test>

[0156] Peel tests were performed using a scratch testing machine. The load range was 20–150 N, and the evaluation was based on the load at which peeling occurred.

[0157] For samples No. 2 to No. 5 and No. 7 to No. 14, which have a Ti-containing intermediate layer of 1 nm or more and 15 nm or less, and contain at least one element selected from the group consisting of Al, Group 4 elements, Group 5 elements, and Group 6 elements, Si, and Cr, they exhibit superior adhesion to the capping layer compared to samples No. 1 and No. 19. Furthermore, they demonstrate high wear resistance compared to samples No. 1, No. 6, and No. 15 to No. 19. In particular, samples No. 2 to No. 5 and No. 7 to No. 11, which have a first and second layer alternately arranged in the thickness direction as the first capping layer, a difference of 1 atomic% or more and 9 atomic% or less between the Al content of the first layer and the Al content of the second layer, a difference of 1 atomic% or more and 12 atomic% or less between the Cr content of the first layer and the Cr content of the second layer, and a difference of 0.5 atomic% or more and 5 atomic% or less between the Si content of the first layer and the Si content of the second layer, exhibit excellent oxidation resistance and wear resistance.

[0158] <Elemental Analysis of the First Cover Layer>

[0159] Elemental analysis based on EDX analysis was performed on the first capping layer of sample No. 4. Specifically, a range spanning multiple first and second layers was extracted from the EDX analysis data. For the extracted range, the changes in Al, Cr, Si, and N content along the stacking direction of the first and second layers (scanning direction) were measured. The analytical conditions are as follows.

[0160] (1) Sample pretreatment: using FIB method (μ-sampling method) for thinning.

[0161] (2) Elemental analysis (surface analysis)

[0162] (3) Scanning transmission electron microscope: JEM-ARM 200F, manufactured by Nippon Electron.

[0163] (4) Accelerating voltage: 200kV

[0164] (5) Beam diameter: approximately 0.2 nmφ

[0165] (6) Elemental analysis apparatus: JED-2300T manufactured by Nippon Electronics Co., Ltd.

[0166] (7) X-ray detector: Si drift detector

[0167] (8) Energy resolution: approximately 140 eV

[0168] (9) X-ray extraction angle: 21.9°

[0169] (10) Solid angle: 0.98sr

[0170] (11) Number of pixels to be input: 256×256

[0171] Figure 11 This is a scanning transmission electron microscope image (HAADF-STEM image) of the first covering layer involved in the implementation method. For example... Figure 11 As shown, the first covering layer involved in the embodiment has a striped structure with alternating first and second layers.

[0172] Figure 12 It is a graph showing the changes in Al, Cr, Si, and N content along the stacking direction of the first and second layers. Figure 12 The horizontal axis of the chart shown is... Figure 11 The scanning direction shown corresponds to this. That is, Figure 11 The starting point of the scan direction shown ( Figure 11 The “0nm” shown is the same as Figure 12 The horizontal axis of the chart shown corresponds to "0nm". Figure 11 The end point of the scan direction shown ( Figure 11 The “50nm” shown is the same as the Figure 12 The horizontal axis of the chart shown corresponds to "50nm".

[0173] like Figure 12 As shown, the Al and Cr contents vary periodically along the scanning direction (i.e., the stacking direction of the first and second layers). Specifically, the Al content increases in the first layer and decreases in the second layer. Furthermore, the Cr content decreases in the first layer and increases in the second layer.

[0174] Furthermore, the Si content also varies periodically along the scanning direction. Specifically, like the Al content, the Si content increases in the first layer and decreases in the second layer.

[0175] Thus, in the first covering layer involved in the embodiment, the Al content (first Al content) in the first layer is greater than the Al content (second Al content) in the second layer, the first Cr content in the first layer is less than the second Cr content in the second layer, and the first Si content in the first layer is greater than the second Si content in the second layer.

[0176] In addition, such as Figure 12 As shown, the difference between the first Al content and the second Al content is more than 1 atomic% and less than 9 atomic%; the difference between the first Cr content and the second Cr content is more than 1 atomic% and less than 12 atomic%; and the difference between the first Si content and the second Si content is more than 0.5 atomic% and less than 5 atomic%.

[0177] <Elemental Analysis of the Interface Region Between the Matrix and the First Cover Layer>

[0178] Elemental analysis based on EDX analysis was performed on the interface region between the matrix and the first capping layer in the sample manufactured by the above-described manufacturing method. The analytical conditions were the same as those for the EDX analysis of the first capping layer described above.

[0179] Figure 13 These are scanning transmission electron microscope images of the covering tool involved in the embodiments. Specifically, Figure 13 The image shows a scanning transmission electron microscope (HAADF-STEM) image of the interface region between the substrate and the first capping layer in a cross section perpendicular to the surface of the substrate.

[0180] also, Figures 14-16 Showing with Figure 13 The image shown is a scanning transmission electron microscope image of the elemental mapping in the same region. Specifically, Figure 14 It is the WC mapping image of the overlay tool involved in the embodiment. Figure 15 It is the Co-mapping image of the overlay tool involved in the embodiment. Figure 16 It is the Ti mapping image of the overlay tool involved in the embodiment.

[0181] like Figures 14-16 As shown, in the covering tool involved in the embodiment, Ti located at the interface region between the substrate and the first covering layer is mostly located above the WC in the WC and Co included in the substrate.

[0182] In addition, such as Figure 15 As shown, in the covering tool involved in the embodiment, at least a portion of the Co-containing binding phase is in contact with the first covering layer.

[0183] <Comparison of Ti Quantities>

[0184] For sample No. 2, the range from the line transversely cut to the WC particles from the first capping layer (hereinafter referred to as "extraction range on WC") and the range from the line transversely cut to the binding phase from the first capping layer (hereinafter referred to as "extraction range on Co") were extracted from the EDX analysis data (area analysis data), and the Ti content was determined for each extraction range. The analytical conditions for the extracted EDX analysis data were the same as those for the EDX analysis of the first capping layer described above.

[0185] Figure 17 This is a graph showing the extraction range on WC and the extraction range on Co. For example... Figure 17 As shown, a region with a length of 50.0 nm along the direction transverse from the first capping layer to the WC particle is defined as the extraction range on the WC. The starting point (0.0 nm) of the extraction range on the WC is located in the first capping layer, and the ending point (50.0 nm) is located on the WC particle.

[0186] Furthermore, a range of 50.0 nm in length along the direction from the first capping layer to the binding phase including Co is defined as the extraction range on Co. The starting point (0.0 nm) of the extraction range on Co is located in the first capping layer, and the ending point (50.0 nm) is located in the binding phase.

[0187] Figure 18 This is a graph showing the determination results of Ti content within the extraction range on WC and the extraction range on Co. Figure 18 In the figure, white circles represent the amount of Ti measured in the WC extraction range, and black circles represent the amount of Ti measured in the Co extraction range.

[0188] Here, the maximum value of Ti amount (atm%) obtained by elemental analysis of the extraction range on WC is set as the Ti(WC) value, and the maximum value of Ti amount (atm%) obtained by elemental analysis of the extraction range on Co is set as the Ti(Co) value. For example... Figure 18 As shown, the Ti(WC) value is approximately 2.55 atm%, and the Ti(Co) value is 1.35 atm%. Furthermore, the ratio of the Ti(WC) value to the Ti(Co) value (Ti(Co) value / Ti(WC) value) is approximately 0.53.

[0189] Thus, in the covering tool involved in the embodiment, the ratio of Ti(WC) value to Ti(Co) value (Ti(Co / WC) ratio) is less than 0.8.

[0190] As described above, the covering tool involved in the embodiment (covering tool 1, for example) comprises: a substrate (substrate 10, for example) containing a WC-based cemented carbide, wherein the WC-based cemented carbide has WC particles (WC particles 10a, for example) as the hard phase component and Co as the main component of the binding phase (binding phase 10b, for example); a covering layer (covering layer 20, for example) located on the substrate; and an intermediate layer (intermediate layer 22, for example) located between the substrate and the covering layer. The intermediate layer contains Ti and has an average layer thickness of 1 nm or more and 15 nm or less. The covering layer has a first covering layer (first covering layer 23, for example) in contact with the intermediate layer. The first covering layer has at least one element selected from the group consisting of Al, Group 5 elements, Group 6 elements and Group 4 elements other than Ti, at least one element selected from the group consisting of C and N, and Si and Cr.

[0191] Therefore, the covering tool according to the embodiment can improve the adhesion between the covering layer and the substrate.

[0192] in addition, Figure 1The shape of the covering tool 1 shown is merely an example and does not limit the shape of the covering tool of this disclosure. The covering tool of this disclosure may also have, for example, a rod-shaped body with a rotation axis extending from a first end to a second end; a cutting edge located at the first end of the body; and a groove extending spirally from the cutting edge toward the second end of the body.

[0193] Those skilled in the art can readily derive further effects and variations. Therefore, the invention is not limited to the specific details and representative embodiments shown and described above. Thus, various modifications can be made without departing from the spirit or scope of the general invention as defined by the appended claims and their equivalents.

[0194] -Explanation of Figure Markers-

[0195] 1. Overlay tool

[0196] 2. Cutter head body

[0197] 5 Through holes

[0198] 10 Matrix

[0199] 10A WC particles

[0200] 10b binding phase

[0201] 20 Covering layers

[0202] 22 Intermediate Layer

[0203] 23 First Covering Layer

[0204] 24 Second Covering Layer

[0205] 70 Cage

[0206] 73 pockets

[0207] 75 screws

[0208] 100 Cutting tools.

Claims

1. An overlay tool, comprising: The matrix comprises a WC-based cemented carbide with WC particles as the hard phase and Co as the binding phase as the main component. A covering layer, located on the substrate; and The intermediate layer is located between the substrate and the cover layer. The intermediate layer contains Ti and has an average layer thickness of more than 1 nm and less than 15 nm. The cover layer has a first cover layer that is in contact with the intermediate layer. The first capping layer has at least one element selected from the group consisting of Al, Group 5 elements, Group 6 elements, and Group 4 elements excluding Ti, at least one element selected from the group consisting of C and N, and Si and Cr. The first cover layer has a striped structure in which a first layer and a second layer are alternately stacked in the thickness direction. The first layer and the second layer contain Al, Cr, Si and N. The first layer has a higher Al content than the second layer. The first layer has a lower Cr content than the second layer. The first layer has a higher Si content than the second layer.

2. The covering tool according to claim 1, wherein, The proportion of Al in the first capping layer is more than 38 atomic% and less than 55 atomic% of the metallic elements. The proportion of Cr in the first capping layer is more than 33 atomic% and less than 48 atomic% of the metallic elements. The proportion of Si in the first capping layer is more than 4 atomic% and less than 15 atomic% of the metal elements.

3. The covering tool according to claim 1, wherein, The difference between the Al content of the first layer and the Al content of the second layer is more than 1 atomic% and less than 9 atomic%. The difference between the Cr content of the first layer and the Cr content of the second layer is more than 1 atomic% and less than 12 atomic%. The difference between the Si content of the first layer and the Si content of the second layer is more than 0.5 atomic% and less than 5 atomic%.

4. A cutting tool, comprising: A rod-shaped retainer with pockets at the ends; and The covering tool according to any one of claims 1 to 3 is located inside the pocket.

Images