An ideal diode circuit
By introducing a timing wake-up generation unit into the ideal diode circuit, the operating mode of the voltage comparator and the reference voltage generation circuit is controlled, which solves the problem of high power consumption in the traditional ideal diode circuit and achieves lower discharge cycle power consumption and higher duty cycle.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU WATECH ELECTRONICS CO LTD
- Filing Date
- 2023-10-20
- Publication Date
- 2026-06-02
Smart Images
Figure CN117595850B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of diode circuits, and more particularly to an ideal diode circuit. Background Technology
[0002] Existing ideal diode circuits based on charge pumps, such as Figure 1 and Figure 2 As shown, the circuit includes a low-voltage clock generator 1, a charge pump 2, an energy storage capacitor C, a bandgap reference circuit 3, a hysteresis comparator 4, a driver amplifier 5, a MOSFET, a reverse-biased cutoff drive circuit 6, and a high-voltage isolation circuit. The charge pump boosts the MOSFET body diode power supply VF to charge the energy storage capacitor. When the actual capacitor voltage reaches a certain value VCAPH, the hysteresis comparator determines this and sends a MOSFET-on signal, reducing the voltage drop across the MOSFET from VF to approximately I*Ron (tens of mV), achieving the function of an ideal diode. As the actual capacitor voltage is consumed down to the lower limit of the energy storage capacitor VCAPL, the hysteresis comparator flips again, turning off the MOSFET and re-entering the cycle of boosting the body diode VF power supply to charge the energy storage capacitor. When the voltage across the MOSFET reverses, the reverse-biased cutoff drive circuit discharges the MOSFET's gate charge, turning off the MOSFET.
[0003] However, in traditional schemes, the bandgap reference voltage and hysteresis comparator are always operational during the discharge cycle, constantly monitoring the actual voltage on the energy storage capacitor. Therefore, the average power consumption is relatively high, limiting further increases in the duty cycle. During normal operation, the duty cycle is high, with most of the operating cycle spent in the capacitor voltage discharge phase. The charge on the energy storage capacitor is consumed by the reference voltage circuit and the hysteresis comparator circuit, and the magnitude of their power consumption directly determines the duty cycle of the ideal diode.
[0004] Therefore, in traditional charge pump-based ideal diode circuits, the bandgap reference voltage and hysteresis comparator are always in operation during the discharge phase, resulting in high average power consumption, which is a technical problem that urgently needs to be solved by those skilled in the art.
[0005] The information disclosed in the background section is only intended to enhance the understanding of the background of this application, and therefore may contain information that is not part of the prior art known to those skilled in the art. Summary of the Invention
[0006] This application provides an ideal diode circuit to solve the technical problem that the traditional charge pump-based ideal diode circuit has a high average power consumption because the bandgap reference voltage and hysteresis comparator are always in operation during the discharge phase.
[0007] This application provides an ideal diode circuit, including a voltage conversion unit, an energy storage capacitor, a voltage comparator, a timing wake-up generation unit, a reference voltage generation circuit, a driving circuit, and a MOSFET;
[0008] The voltage conversion unit and the energy storage capacitor CAP are connected in series between the source and drain of the MOSFET. The negative input terminal of the voltage comparator is connected to the reference voltage generated by the reference voltage generation circuit, and the positive input terminal of the voltage comparator is connected to the actual voltage of the energy storage capacitor CAP. The output of the timing wake-up generation unit controls the enable terminals of the voltage comparator and the reference voltage generation circuit. The drive circuit is connected in series between the output terminal of the voltage comparator and the gate of the MOSFET.
[0009] The timed wake-up generation unit is used for:
[0010] When the MOSFET switches to the on state and enters the discharge cycle of the ideal diode circuit, the voltage comparator and the reference voltage generation circuit are turned off.
[0011] Furthermore, the voltage comparator and the reference voltage comparator V are periodically activated during the discharge cycle. 电容实际电压 and V CAPL This determines the switching on and off of the voltage comparator and the reference voltage generation circuit;
[0012] Among them, V 电容实际电压 V is the actual voltage across the energy storage capacitor. CAPL A lower limit value is preset for the capacitor voltage and used as a reference voltage.
[0013] The embodiments of this application, by adopting the above technical solutions, have the following technical effects:
[0014] In the ideal diode circuit of this application embodiment, when the MOSFET switches to the on state and enters the discharge cycle, the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit are turned off, leaving only the timing wake-up generation unit operational. During the discharge cycle, the voltage comparator and the reference voltage comparator V are periodically turned on. 电容实际电压 and V CAPL The voltage comparator and the reference voltage generation circuit are switched on and off to determine their respective functions. During the discharge cycle of the ideal diode circuit, only the timer wake-up generation unit operates during the periodic timing period. When the timer wake-up generation unit reaches the preset timing duration, the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit will operate multiple times in a short period of time, resulting in low power consumption of the ideal diode in the discharge cycle of this embodiment. Attached Figure Description
[0015] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:
[0016] Figure 1 This is a schematic diagram of an existing ideal diode circuit based on a charge pump in the background art;
[0017] Figure 2 for Figure 1 Timing diagram of an ideal diode circuit based on a charge pump;
[0018] Figure 3 This is a schematic diagram of an ideal diode circuit according to an embodiment of this application;
[0019] Figure 4 for Figure 1 The flowchart of an ideal diode circuit is shown below;
[0020] Figure 5 for Figure 1 The timing diagram of the ideal diode circuit is shown. Detailed Implementation
[0021] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.
[0022] The duty cycle of an ideal diode circuit is equal to the discharge time / (charging time + discharge time), and the duty cycle is also equal to 1 - discharge current / charging current.
[0023] Therefore, increasing the duty cycle involves either reducing the discharge current or increasing the charging current. Increasing the charging current typically requires a larger charge pump, resulting in greater area and power consumption, leading to higher costs. The discharge current is generally limited by the accuracy of the reference voltage and the hysteresis comparator, limiting its reduction potential. Therefore, once the accuracy of the reference voltage and the hysteresis comparator reaches its current high level, improvements in the discharge and charging currents, such as 1µA, become difficult to achieve further. Consequently, the duty cycle cannot be increased significantly, especially at high temperatures, where it typically only reaches around 90%.
[0024] Through extensive creative work, the inventors of this application have found a new way to reduce power consumption during the discharge cycle, thereby improving the duty cycle.
[0025] For most ideal diode circuits, multiple discharge cycles combine to form a discharge phase, which is quite long. In existing technologies, during most of each discharge cycle, the actual voltage across the energy storage capacitor is significantly higher than the preset lower limit. Furthermore, in existing technologies, the bandgap reference voltage and hysteresis comparator remain operational during the discharge phase to monitor the actual voltage across the energy storage capacitor in real time, resulting in a high average power consumption within the discharge cycle.
[0026] The inventors of this application have undertaken extensive inventive work and discovered that the discharge phase is very long, and for most of this period, the actual voltage of the energy storage capacitor is far greater than the preset lower limit of the capacitor voltage. During this extended period when the actual voltage of the energy storage capacitor is significantly higher than the preset lower limit, real-time detection of the actual voltage by the reference voltage and the hysteresis comparator is unnecessary. We only intend to activate the reference voltage and the hysteresis comparator for detection when the voltage approaches the preset lower limit. Based on this design concept, the ideal diode circuit of this application embodiment was formed. The ideal diode circuit of this application embodiment utilizes a timed wake-up detection technique to reduce power consumption during the discharge cycle of the energy storage capacitor. Specifically, for most of the discharge cycle, the reference voltage and the hysteresis comparator are turned off, while only a timed wake-up generation unit with a fixed low power consumption is maintained. The timed wake-up generation unit periodically activates the reference voltage and the hysteresis comparator. If the actual voltage of the energy storage capacitor is still detected to be higher than the target value, the reference voltage and the hysteresis comparator are turned off again, continuing to maintain low-power operation of the ideal diode circuit, thereby extending the discharge time of the ideal diode circuit, increasing the duty cycle, and reducing the average on-state voltage drop of the system.
[0027] Example 1
[0028] like Figure 3 , Figure 4 and Figure 5 As shown, the ideal diode circuit in this embodiment includes a voltage conversion unit ( Figure 3 The voltage transformation unit includes a clock and charge pump, a CAP energy storage capacitor, and a voltage comparator. Figure 3 The medium voltage comparator uses a hysteresis comparator, a reference voltage generation circuit (not shown in the figure), a timing wake-up generation unit, a drive circuit, and a MOSFET;
[0029] The voltage conversion unit and the energy storage capacitor CAP are connected in series between the source and drain of the MOSFET. The negative input terminal of the voltage comparator is connected to the reference voltage generated by the reference voltage generation circuit, and the positive input terminal of the voltage comparator is connected to the actual voltage of the energy storage capacitor CAP. The output of the timing wake-up generation unit controls the enable terminals of the voltage comparator and the reference voltage generation circuit. The drive circuit is connected in series between the output terminal of the voltage comparator and the gate of the MOSFET.
[0030] When the MOSFET is turned on, the voltage VF between the source and drain of the MOSFET will drop to R. ON ×I, the energy storage capacitor of the ideal diode circuit discharges, entering the discharge cycle;
[0031] Among them, R ON I is the on-resistance of the MOSFET, and I is the on-current of the MOSFET.
[0032] When the MOSFET is turned off, the voltage drop between the source and drain of the MOSFET returns to the voltage of the MOSFET body diode, thereby driving the voltage conversion unit (i.e., the clock and charge pump) to charge the energy storage capacitor.
[0033] The charge pump boosts the voltage of the MOSFET's body diode to charge the energy storage capacitor. When the energy storage capacitor voltage reaches a certain value VCAPH, the hysteresis comparator determines this and sends a MOSFET-on signal, reducing the voltage VF between the MOSFET's source and drain to R. ON ×I, where R ON I is the on-resistance of the MOSFET, I is the on-current of the MOSFET, and R is the on-resistance. ON ×I is approximately tens of mV, achieving the function of an ideal diode.
[0034] The timed wake-up generation unit is used for:
[0035] When the MOSFET switches to the on state and enters the discharge cycle of the ideal diode circuit, the voltage comparator and the reference voltage generation circuit are turned off.
[0036] Furthermore, the voltage comparator and the reference voltage comparator V are periodically activated during the discharge cycle. 电容实际电压 and V CAPL This determines the switching on and off of the voltage comparator and the reference voltage generation circuit;
[0037] Among them, V 电容实际电压 V is the actual voltage across the energy storage capacitor. CAPL A lower limit value is preset for the capacitor voltage and used as a reference voltage.
[0038] The timed wake-up generation unit is specifically used for:
[0039] In V 电容实际电压 >V CAPL At that time, the voltage comparator and reference voltage continue to be periodically turned on;
[0040] In V 电容实际电压 ≤V CAPLDuring this period, the voltage comparator and the reference voltage generation circuit remain on to continue the charging cycle of the ideal diode circuit until the next discharging cycle of the ideal diode circuit begins.
[0041] The specific working process of the timed wake-up generation unit is as follows:
[0042] When the MOSFET switches to the on state and enters the discharge cycle of the ideal diode circuit, the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit are turned off, and the timing begins.
[0043] When the timer wake-up unit reaches the preset timing duration, it activates the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit to compare V. 电容实际电压 and V CAPL :
[0044] In V 电容实际电压 >V CAPL When the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit are turned off again, the timing starts again; this prepares for the next periodic turning on of the voltage comparator and the reference voltage.
[0045] In V 电容实际电压 ≤V CAPL If the voltage comparator (i.e., hysteresis comparator) and the reference voltage generation circuit remain on during the charging cycle, they will continue to operate until the next discharging cycle begins.
[0046] It should be noted that in V 电容实际电压 ≤V CAPL Previously, there may have been multiple V's. 电容实际电压 >V CAPL The process of periodically turning on the voltage comparator and the reference voltage continues.
[0047] During the discharge cycle, when V is detected 电容实际电压 ≤V CAPL At that time, that is, the actual voltage V of the energy storage capacitor. 电容实际电压 The capacitor voltage reaches the preset lower limit value V. CAPL This is the last detection of the current discharge cycle. After turning on the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit, it will not be turned off to enter the charging cycle until the next charging cycle begins.
[0048] In the ideal diode circuit of this application embodiment, when the MOSFET switches to the on state and enters the discharge cycle, the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit are turned off. Only the timing wake-up generation unit remains operational. The timing wake-up generation unit turns on the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit when the preset timing duration is reached, and the actual voltage V of the energy storage capacitor is measured.电容实际电压 Perform the test, if V 电容实际电压 >V CAPL That is, the distance from the preset lower limit value V of the capacitor voltage CAPL If the distance is too far, then the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit are turned off again, continuing to operate only with an extremely low-power clock, periodically waking up the generation unit to start timing again. Thus, if... Figure 5 As shown, within one discharge cycle, the timed wake-up unit periodically turns on the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit multiple times to measure the actual voltage V of the energy storage capacitor. 电容实际电压 The detection process determines whether the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit are turned on and off. During the discharge cycle of the ideal diode circuit, only the timer wake-up generation unit operates during the periodic timing period. When the timer wake-up generation unit reaches the preset timing duration, the voltage comparator (i.e., the hysteresis comparator) and the reference voltage generation circuit will operate multiple times in a short period of time, resulting in low power consumption of the ideal diode in this embodiment during the discharge cycle.
[0049] Specifically, the current of the timed wake-up generation unit is much smaller than the current of the reference voltage generation circuit and the hysteresis comparator. For example, the current of the timed wake-up generation unit is 0.1uA.
[0050] Therefore, the average discharge current over the entire discharge cycle is:
[0051] The power consumption of the low-power timed wake-up generation unit × the percentage of sleep time + the current of the reference circuit and hysteresis comparator × the percentage of operating time.
[0052] For example: the current of the reference circuit and hysteresis comparator is 1uA, the current of the timed wake-up generation unit is 0.1uA; the percentage of sleep time is 90%, and the percentage of working time is 10%. Then the average discharge current of the discharge cycle is 0.1uA×90%+1uA×10%=0.19uA.
[0053] In the traditional scheme of the background technology, the average discharge current of the discharge cycle is 1uA × 100% = 1uA.
[0054] The average current of the discharge cycle in the embodiments of this application is reduced by 81% compared with the conventional solutions in the prior art.
[0055] If the ideal diode circuit of this application embodiment has a charging current of 20uA, the duty cycle of the conventional solution in the background art is 95%, while the ideal diode circuit of this application embodiment is 99%.
[0056] The ideal diode circuit in this application embodiment switches the traditional continuous operation mode of reference voltage and hysteresis comparison within each discharge cycle to a discrete operation mode of reference voltage and hysteresis comparison timed operation, which is a change in control method. Through timed wake-up and sampling detection, the average current of the discharge cycle is further reduced, and the system duty cycle is improved.
[0057] In practice, during the discharge cycle of each ideal diode circuit, the generation unit is periodically woken up to work for K working cycles, where K is greater than or equal to 3.
[0058] Each working cycle of the timed wake-up generation unit activates the hysteresis comparator and reference circuit once, monitoring the actual voltage of the energy storage capacitor through the hysteresis comparator and reference circuit. This achieves multiple (K times) monitoring of the actual voltage of the energy storage capacitor through the hysteresis comparator and reference circuit within each discharge cycle of the ideal diode circuit.
[0059] In practice, the output of the hysteresis comparator controls the timed wake-up generation unit;
[0060] When the output of the hysteresis comparator is high, it triggers the timed wake-up generation unit to start the next working cycle and controls the MOSFET to remain on, entering the discharge cycle.
[0061] In the ideal diode circuit, only the timed wake-up generation unit is always working during the discharge cycle, while the hysteresis comparator and reference voltage generation circuit only work periodically, that is, the hysteresis comparator and reference voltage generation circuit indicate a short start-up time.
[0062] Therefore, the power consumption of an ideal diode circuit during the discharge cycle can be further reduced, the discharge cycle duration can be further increased, the system duty cycle can be improved, and the average on-state voltage drop of the system can be reduced.
[0063] In implementation, when the output of the hysteresis comparator is low, the timing wake-up generation unit stops working, and the MOSFET remains off, entering the charging cycle of the ideal diode circuit. A low-voltage clock drives the charge pump to charge the energy storage capacitor. During the charging cycle of the ideal diode circuit, the hysteresis comparator and the reference circuit remain in operating mode until V... 电容实际电压 >V CAPL Then, it enters the discharge cycle of the ideal diode circuit.
[0064] After entering the discharge cycle of the ideal diode circuit, the timed wake-up unit periodically wakes up the hysteresis comparator and the reference voltage generation circuit to monitor the actual voltage of the energy storage capacitor.
[0065] In this circuit, the hysteresis comparator and the reference voltage generation circuit remain in operating mode throughout the charging cycle of the ideal diode circuit, until V... 电容实际电压 >V CAPL Then, it enters the discharge cycle of the ideal diode circuit.
[0066] In practice, the ideal diode circuit in the embodiments of this application further includes:
[0067] A high-voltage isolation circuit is connected between the energy storage capacitor CAP and the drain of the MOSFET.
[0068] In practice, the ideal diode circuit in the embodiments of this application further includes:
[0069] A reverse bias detection shutdown circuit is connected between the drive circuit and the high voltage isolation circuit, and is connected in parallel between the source and drain of the MOSFET;
[0070] The reverse bias detection shutdown circuit is used to shut off the electrical connection between the MOSFET and the energy storage capacitor when the voltage across the MOSFET is greater than a preset safe voltage.
[0071] In practice, the low-voltage clock and charge pump are connected in series;
[0072] The negative input terminal of the hysteresis comparator is connected to the reference voltage generated by the reference voltage generation circuit.
[0073] The low-voltage clock is used to drive the charge pump when the voltage signal of the energy storage capacitor is less than the reference voltage.
[0074] The operation of the ideal diode circuit in the embodiments of this application is as follows: Figure 4 As shown, it includes the following steps:
[0075] Wait for the ideal diode circuit to enter the discharge cycle;
[0076] After the ideal diode circuit enters the discharge cycle, the timer wake-up generation unit starts timing;
[0077] Determine V 电容实际电压 Is it greater than V? CAPL :
[0078] V 电容实际电压 >V CAPL If the hysteresis comparator and reference circuit are turned off again, the timer will wake up the generation unit and start timing again to continue monitoring.
[0079] V 电容实际电压 Not greater than V CAPL If the MOSFET is turned off, charging will begin, and the charging cycle will begin.
[0080] In the description of this application and its embodiments, it should be understood that the terms "top", "bottom", "height", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0081] In this application and its embodiments, unless otherwise expressly specified and limited, the terms "set," "install," "connect," "link," "fix," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0082] In this application and its embodiments, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0083] The foregoing disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described above. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.
[0084] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.
[0085] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.
Claims
1. An ideal diode circuit, characterized in that, It includes a voltage conversion unit, an energy storage capacitor, a voltage comparator, a timing wake-up generation unit, a reference voltage generation circuit, a drive circuit, and a MOSFET; The voltage conversion unit and the energy storage capacitor CAP are connected in series between the source and drain of the MOSFET. The negative input terminal of the voltage comparator is connected to the reference voltage generated by the reference voltage generation circuit, and the positive input terminal of the voltage comparator is connected to the actual voltage of the energy storage capacitor CAP. The output of the timing wake-up generation unit controls the enable terminals of the voltage comparator and the reference voltage generation circuit. The drive circuit is connected in series between the output terminal of the voltage comparator and the gate of the MOSFET. The timed wake-up generation unit is used for: When the MOSFET switches to the on state and enters the discharge cycle of the ideal diode circuit, the voltage comparator and the reference voltage generation circuit are turned off. Furthermore, the voltage comparator and the reference voltage comparator V are periodically activated during the discharge cycle. 电容实际电压 and V CAPL This determines the switching on and off of the voltage comparator and the reference voltage generation circuit; Among them, V 电容实际电压 V is the actual voltage across the energy storage capacitor. CAPL A lower limit value is preset for the capacitor voltage and used as a reference voltage; The timed wake-up generation unit is specifically used for: In V 电容实际电压 > V CAPL At that time, the voltage comparator and reference voltage continue to be periodically turned on; In V 电容实际电压 ≤V CAPL During this period, the voltage comparator and the reference voltage generation circuit remain on to continue the charging cycle of the ideal diode circuit until the next discharging cycle of the ideal diode circuit begins.
2. The ideal diode circuit according to claim 1, characterized in that, The timed wake-up generation unit is specifically used for: When the MOSFET switches to the on state and enters the discharge cycle of the ideal diode circuit, the voltage comparator and the reference voltage generation circuit are turned off, and timing begins. When the timer wake-up unit reaches the preset timing duration, the voltage comparator and the reference voltage are activated to compare V. 电容实际电压 and V CAPL : When V 电容实际电压 > V CAPL At that time, the voltage conversion unit and the reference voltage are turned off again, and the timing starts again.
3. The ideal diode circuit according to claim 2, characterized in that, Within each discharge cycle of an ideal diode circuit, the timed wake-up generation unit operates for K operating cycles, where K is greater than or equal to 3.
4. The ideal diode circuit according to claim 3, characterized in that, The output of the voltage comparator controls the timing wake-up generation unit; When the output of the voltage comparator is high, it triggers the timing wake-up generation unit to start the next working cycle and controls the MOSFET to remain on, entering the discharge cycle of the ideal diode circuit. In the ideal diode circuit, only the timed wake-up generation unit is always working during the discharge cycle, while the voltage comparator and the reference voltage generation circuit only work periodically.
5. The ideal diode circuit according to claim 4, characterized in that, When the output of the voltage comparator is low, the timing wake-up generation unit is controlled to stop working, and the MOSFET is controlled to remain off, entering the charging cycle of the ideal diode circuit. In this ideal diode circuit, the voltage comparator and reference voltage generation circuit remain in operating mode throughout the charging cycle, until V... 电容实际电压 >V CAPL Then, it enters the discharge cycle of the ideal diode circuit.
6. The ideal diode circuit according to claim 5, characterized in that, When the MOSFET is turned on, the voltage VF between the source and drain of the MOSFET will drop to RON×I, and the energy storage capacitor of the ideal diode circuit will start to discharge and enter the discharge cycle. Where RON is the on-resistance of the MOSFET, and I is the on-current of the MOSFET.
7. The ideal diode circuit according to claim 6, characterized in that, When the MOSFET is turned off, the voltage drop between the source and drain of the MOSFET returns to the voltage of the MOSFET body diode, thereby enabling the voltage conversion unit to charge the energy storage capacitor.
8. The ideal diode circuit according to claim 6, characterized in that, The voltage conversion unit includes a low-voltage clock and a charge pump connected in series; The voltage comparator is a hysteresis comparator, and the negative input terminal of the hysteresis comparator is connected to the reference voltage generated by the reference voltage generation circuit. The low-voltage clock is used to drive the charge pump when the voltage signal of the energy storage capacitor is less than the reference voltage.
9. The ideal diode circuit according to claim 6, characterized in that, Also includes: A high-voltage isolation circuit is connected between the energy storage capacitor CAP and the drain of the MOSFET.
10. The ideal diode circuit according to claim 9, characterized in that, Also includes: A reverse bias detection shutdown circuit is connected between the drive circuit and the high voltage isolation circuit, and is connected in parallel between the source and drain of the MOSFET. The reverse bias detection shutdown circuit is also connected between the MOSFET and the energy storage capacitor CAP. The reverse bias detection shutdown circuit is used to shut off the electrical connection between the MOSFET and the energy storage capacitor CAP when the voltage across the MOSFET is greater than a preset safe voltage.