Method of manufacturing display assembly, display assembly and display chip transfer structure

Abstract

The embodiment of the present application provides a manufacturing method of a display assembly, a display assembly and a display chip transfer structure. In detail, in the embodiment, a first adhesive layer is made on a transfer substrate, a display chip is adhered to a temporary substrate provided with a second adhesive layer, then a photosensitive material layer is formed on a side surface of the display chip away from the temporary substrate, then the first adhesive layer is adhered to the photosensitive material layer formed on the display chip, finally, the temporary substrate is removed, and the display chip is transferred to a display substrate through the transfer substrate. In this way, the photosensitive material is directly made on the surface of the display chip away from the temporary substrate based on the temporary substrate where the display chip is located, so that the transfer precision when the display chip is transferred through the transfer substrate can be improved.

Description

[0001] This patent application claims domestic priority to the invention patent application filed on August 18, 2022, entitled "Method for manufacturing a display component and display component", application number "202210990972.4". Technical Field

[0002] This application relates to the field of display device manufacturing technology, and more specifically, to a method for manufacturing a display component, a display component, and a display chip transfer structure. Background Technology

[0003] With the continuous development of display technology, micro-LED display technology has become a research hotspot for next-generation display technologies due to its advantages such as high brightness, high response speed, low power consumption, and long lifespan. Currently, one of the challenges in fabricating Micro-LED displays lies in high-efficiency batch transfer technology. Laser transfer technology, with its advantages of flexible transfer size, compatibility with repair and patching techniques, and high transfer efficiency, has been widely researched and applied. However, laser transfer also has several problems, such as low transfer accuracy and difficulties in material compatibility preventing direct transfer to electrical substrates. Summary of the Invention

[0004] To overcome at least some of the technical problems mentioned in the background section, in a first aspect, embodiments of this application provide a method for manufacturing a display component, comprising:

[0005] A transfer substrate is provided, and a first adhesive layer is formed on the transfer substrate;

[0006] A temporary substrate with a second adhesive layer is provided, and a display chip is adhered to the second adhesive layer;

[0007] A photosensitive material layer is formed on the surface of the display chip facing away from the temporary substrate;

[0008] The first adhesive layer is bonded to the photosensitive material layer formed on the display chip;

[0009] The temporary substrate is removed, and the display chip is transferred to the display substrate via the transfer substrate.

[0010] Based on one possible implementation of the first aspect, the display chip is adhered to the second adhesive layer, including:

[0011] The side of the display chip containing the electrodes is attached to the second adhesive layer;

[0012] Pressure is applied to the display chip from the side opposite to the electrode to at least partially embed the display chip into the second adhesive layer;

[0013] Preferably, the display chip is embedded in the second adhesive layer to a depth greater than 2 μm;

[0014] The display chip is completely embedded in the second adhesive layer, and the surface of the display chip facing away from the temporary substrate is flush with the surface of the second adhesive layer facing away from the temporary substrate.

[0015] According to one possible implementation of the first aspect, before bonding the transfer substrate to the temporary substrate on which the display chip is disposed, the method further includes:

[0016] A photoresist layer is formed on the photosensitive material layer, and the photoresist layer is patterned to form a photoresist pattern corresponding to each of the display chips; wherein the orthographic projection of the photoresist pattern on the temporary substrate coincides with the orthographic projection of the display chip on the temporary substrate.

[0017] The photosensitive material layer and the second adhesive layer are etched to remove the photosensitive material layer and the second adhesive layer between adjacent display chips;

[0018] Remove the photoresist pattern located above the display chip.

[0019] In one possible implementation based on the first aspect, the side of the display chip facing away from the temporary substrate has a height difference with the side of the second adhesive layer facing away from the temporary substrate, and the side of the display chip facing away from the temporary substrate is higher than the side of the second adhesive layer facing away from the temporary substrate.

[0020] Preferably, the photosensitive material layer includes a first portion located on the display chip and a second portion located on the second adhesive layer, wherein the first portion and the second portion are not in contact, and the second portion is not in contact with the display chip;

[0021] Preferably, the thickness of the first adhesive layer is 0.2um-10um, and the thickness of the second adhesive layer is 0.1um-50um.

[0022] In one possible implementation based on the first aspect, the thickness of the photosensitive material layer is 0.2 μm to 0.8 μm;

[0023] Preferably, the thickness of the photosensitive material layer is 0.7 μm, and the photosensitive material layer is formed from a non-adhesive photosensitive material.

[0024] Secondly, embodiments of this application also provide a display component, which is manufactured by the method described above.

[0025] Thirdly, embodiments of this application also provide a display chip transfer structure, including:

[0026] A transfer substrate, wherein a first adhesive layer is disposed on the transfer substrate;

[0027] The display chip has a photosensitive material layer disposed on the side surface of the display chip near the first adhesive layer. The photosensitive material layer is bonded to the first adhesive layer so as to facilitate the transfer of the display chip onto the display substrate via the transfer substrate.

[0028] In one possible implementation based on the third aspect, the thickness of the photosensitive material layer is 0.1 μm to 0.8 μm.

[0029] In one possible implementation based on the third aspect, the thickness of the photosensitive material layer is 0.7 μm.

[0030] Based on one possible implementation of the third aspect, the photosensitive material layer is formed from a non-adhesive photosensitive material.

[0031] In summary, compared with the prior art, the manufacturing method of a display component, the display component, and the display chip transfer structure provided in this application directly fabricate the photosensitive material required in the laser transfer process of the display chip on the side of the display chip away from the temporary substrate based on the temporary substrate on which the display chip is located. This ensures that the photosensitive material is only located on the surface of the display chip away from the temporary substrate, and that no photosensitive material adheres to the periphery of the display chip. This is beneficial because when the display chip is subsequently transferred through the transfer substrate, it will not be affected by the photosensitive material that may remain on the periphery of the display chip, thus avoiding the misalignment of the landing point of the display chip during transfer and improving the transfer accuracy. Attached Figure Description

[0032] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the process flow for an LED chip transfer process in the prior art.

[0034] Figure 2 This is a schematic diagram of the formation of a first adhesive layer based on a transfer substrate in the manufacturing method of the display component provided in this application embodiment;

[0035] Figure 3This is a schematic diagram of the process of manufacturing a display component according to an embodiment of this application, in which the display chip is adhered to the second adhesive layer on a temporary substrate;

[0036] Figure 4 This is one of the schematic diagrams illustrating the coating of photosensitive material from the side of the display chip away from the temporary substrate in the manufacturing method of the display component provided in this application embodiment;

[0037] Figure 5 This is a schematic diagram illustrating the bonding of the transfer substrate and the temporary substrate in the manufacturing method of the display component provided in this application embodiment;

[0038] Figure 6 The manufacturing method of the display component provided in this application embodiment removes Figure 4 A schematic diagram of the temporary substrate shown;

[0039] Figure 7 This is a schematic diagram showing the display chip completely embedded in the second adhesive layer in an alternative embodiment of the manufacturing method of the display component provided in this application.

[0040] Figure 8 This is a second schematic diagram of the method for manufacturing a display component provided in this application, in which photosensitive material is coated from the side of the display chip away from the temporary substrate;

[0041] Figure 9 This is a schematic diagram of forming photoresist patterns corresponding to each display chip on the photosensitive material layer in the manufacturing method of the display component provided in this application embodiment;

[0042] Figure 10 This is a schematic diagram of removing the photoresist pattern after etching the photosensitive material layer and the second adhesive layer in the manufacturing method of the display component provided in this application embodiment.

[0043] icon:

[0044] 100 - Transfer substrate; 110 - First adhesive layer; 200 - Temporary substrate; 210 - Second adhesive layer; 220 - Photosensitive material layer; 230 - Photoresist pattern; 300 - Display chip. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0047] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0048] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0049] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0050] As mentioned in the background section, the inventors, through research on existing laser transfer technologies, discovered that a common laser transfer technique involves depositing a photosensitive material layer (such as a photosensitive adhesive layer) on a transfer substrate (also known as an upper substrate), and then using this transfer substrate to adhere a display chip (such as a Micro-LED) to the target substrate (such as a display substrate). In this transfer method, during the transfer of the display chip, the periphery of the display chip may be partially or completely covered by the photosensitive material on the transfer substrate, thus affecting the accuracy of the landing point during the transfer.

[0051] As an example, let's take the LED chip transfer process as an example, such as... Figure 1 The diagram shown illustrates a common LED chip transfer process in existing technologies. Traditional LED chip transfer processes typically include... Figure 1 The process flow for P1-P3 is shown below. The process flow for each of P1-P3 is described in an exemplary manner.

[0052] P1, the LED chip C to be transferred is disposed on a transfer substrate 100 through a dynamic release layer (DRL), wherein the dynamic release layer DRL generally includes a photosensitive material layer.

[0053] P2, perform an etching process on the dynamic release layer DRL to remove the portion between the LED chips C.

[0054] P3. After the etching process, the LED chip C is transferred from the transfer substrate 100 to the display substrate 101 by a laser transfer process.

[0055] The manufacturing process described above requires a narrow range of photosensitive materials. Firstly, the photosensitive material must possess adhesive strength. Therefore, in the P1 process, the photosensitive material in the Dynamic Release Layer (DRL) needs to be heated at high temperatures to generate the required adhesive strength; that is, the P1 process requires high-temperature treatment. Secondly, the photosensitive material must be insensitive to fluctuations in laser energy. This is necessary to ensure landing accuracy during the transfer process while reducing equipment specifications (spot energy uniformity), thereby lowering costs. Furthermore, since the layer thickness of the photosensitive material is generally ≥0.5µm, in practical applications, it is generally necessary to achieve 2-5µm to ensure sufficient adhesive strength. Therefore, in the P2 process, the photosensitive material / adhesive material between adjacent Micro-LEDs needs to be etched to avoid the influence of the adhesive layer around the LED on the laser transfer accuracy. Based on the aforementioned problems of a narrow material selection range and additional etching processes, this application provides a method for manufacturing a display component, a display component, and a display chip transfer structure to solve the problem of a narrow range of laser release materials and improve laser transfer accuracy.

[0056] The solution provided in this embodiment will be described exemplarily below with reference to the accompanying drawings.

[0057] First, please refer to Figure 2 , Figure 2 This is a schematic diagram of a manufacturing method for a display component provided in an embodiment of this application. The method includes the following steps S100-S300, which will be described exemplarily below with reference to the accompanying drawings.

[0058] Step S100, for example Figure 2 As shown, a transfer substrate 100 is provided, and a first adhesive layer 110 is formed on the transfer substrate 100.

[0059] In one possible implementation, the transfer substrate 100, also referred to as the upper substrate, is used to adsorb and transfer display chips (such as Micro-LED chips) onto the target substrate in subsequent manufacturing processes. The transfer substrate 100 can be, but is not limited to, a glass substrate, a sapphire substrate, a resin substrate, a ceramic substrate, a PI substrate, etc. For ease of subsequent use, the transfer substrate 100 is preferably a rigid substrate; for example, a glass substrate or a sapphire substrate can be selected. Furthermore, the first adhesive layer 110 can be any material with adhesive properties to facilitate subsequent pickup of the display chip through the transfer substrate 100. For example, in this embodiment, the first adhesive layer 110 can be a temporary bonding adhesive layer. In actual fabrication, an adhesive material can be directly coated to form the first adhesive layer 110, or a material with certain properties can be coated first, and then the material can be further processed to make it adhesive before forming the first adhesive layer 110. This embodiment does not limit the specific formation method of the first adhesive layer.

[0060] Exemplarily, in this embodiment, the first adhesive layer 110 can be formed by coating the transfer substrate 100 with an adhesive material using a spin coater, or by coating the transfer substrate 100 with an adhesive material using a slit coating process. The thickness of the formed first adhesive layer 110 is between 0.2 μm and 10 μm. Furthermore, this embodiment preferably uses an adhesive material that is non-reactive and non-absorbent of laser light in the 193-370 nm range.

[0061] Step S200, for example Figure 3 As shown, a temporary substrate 200 with a second adhesive layer 210 is provided, and a display chip 300 is adhered to the second adhesive layer 210.

[0062] In this embodiment, the display chip 300 can be a Micro-LED chip, and the number of display chips 300 adhered to the second adhesive layer 210 can be multiple. Generally, a large number of display chips 300 can be disposed on the temporary substrate 200 through the second adhesive layer 210 for use in subsequent laser mass transfer processes. In this embodiment, the thickness of the second adhesive layer 210 is 0.1µm-50µm.

[0063] Similar to the transfer substrate 100, the temporary substrate 200 can be a sapphire substrate, a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, etc. For example, using a sapphire substrate as the temporary substrate 100, various film layers of the display chip 300 can be grown on the temporary substrate 200, and then a large number of display chips 300 meeting requirements (e.g., having suitable dimensions and types) can be formed based on each film layer. In other embodiments, the temporary substrate 200 is not limited to a sapphire substrate and can be other types of substrates.

[0064] In other embodiments, the display chip 300 may also be a mini-LED chip, which is not specifically limited in this embodiment.

[0065] Step S300, for example Figure 4 As shown, a photosensitive material layer 220 is formed on the surface of the display chip 300 facing away from the temporary substrate 200.

[0066] In one possible implementation of this embodiment, a photosensitive material layer 220 with a thickness of 0.1µm-50µm can be fabricated from the side of the display chip 300 facing away from the temporary substrate 200 using processes such as spin coating, slot coating, or inkjet printing. Based on this implementation, there is a height difference between the side of the display chip 300 facing away from the temporary substrate 200 and the side of the second adhesive layer 210 facing away from the temporary substrate 200, with the side of the display chip 300 facing away from the temporary substrate 200 being higher than the side of the second adhesive layer 210 facing away from the temporary substrate 200. Thus, further referring to… Figure 4 As shown, the photosensitive material layer 220 formed by the above method includes a first portion located on the display chip 300 and a second portion located on the second adhesive layer 210. The first portion and the second portion are not in contact, and the second portion is not in contact with the display chip.

[0067] Furthermore, the display chip 300 can be an inverted trapezoidal structure. In this way, by coating the photosensitive material on the side of the display chip 300 away from the temporary substrate 200, it is beneficial to ensure that the photosensitive material is only located on the surface of the display chip 300 away from the temporary substrate 200, and that no photosensitive material adheres to the periphery of the display chip 300. For example, no photosensitive material adheres to the four sides between the upper and lower surfaces of the display chip 300. This is beneficial because when the display chip 300 is subsequently transferred through the transfer substrate 100, it will not be affected by the photosensitive material that may remain on the periphery of the display chip 300, thus preventing a reduction in the landing accuracy of the display chip 300 during transfer.

[0068] Compared to the traditional method of applying photosensitive adhesive material to the transfer substrate 100 (upper substrate), the periphery of the display chip 300 is not covered by photosensitive material, thus not affecting the landing accuracy during subsequent laser transfer. Furthermore, by directly fabricating the photosensitive material on top of the display chip 300 and bonding the photosensitive material layer to the display chip 300 via the first adhesive layer 110 on the transfer substrate 100, the display chip 300 can be picked up and transferred. This method eliminates the need for adhesive properties in the photosensitive material, allowing for a thinner photosensitive material layer. This reduces the requirements on the properties of the photosensitive material during laser transfer (e.g., a non-adhesive photosensitive material can be used), expanding the range of photosensitive material options.

[0069] Step S400: The first adhesive layer 110 is bonded to the photosensitive material layer 220 formed on the display chip 300.

[0070] In one possible implementation of this embodiment, for example Figure 5 As shown, the transfer substrate 100 can be flipped so that the first adhesive layer 110 faces the photosensitive material layer 220 on the temporary substrate 200. Then, the transfer substrate 100 and the temporary substrate 200 are bonded together so that the first adhesive layer 110 is bonded to the photosensitive material layer 220 formed on the display chip 300.

[0071] Furthermore, through extensive laser transfer experiments, the inventors of this application discovered that by fabricating the photosensitive material layer 220 with a thickness between 0.1 μm and 0.8 μm, the laser transfer yield can meet requirements without etching away the photosensitive material layer 220 between the display chips 300. For example, in an alternative preferred embodiment, when the thickness of the photosensitive material layer 220 is 0.7 μm, the laser transfer yield of the display chip 300 can reach a high level (e.g., above 99%). In addition, the inventors of this application have also found that... Figure 1 The conventional laser transfer process shown was validated using experimental data. If the conventional laser transfer process is adopted... Figure 1In the transfer process shown, the thickness of the photosensitive material layer 220 generally needs to be at least 1-2 μm to achieve the adhesion required in process P1. However, if the etching process in P2 is omitted and the thickness is set to 1-2 μm, the laser transfer yield in P3 will be significantly reduced, potentially failing to meet mass production requirements. Therefore, based on the process of this embodiment, the thickness of the photosensitive material layer 220 above the display chip 300 can be made thinner. This saves on the amount of photosensitive material used, reducing costs. Furthermore, since in this embodiment, after the photosensitive material layer 220 is cured onto the display chip 300, the subsequent transfer process relies on the adhesion of the first adhesive layer 110 on the transfer substrate to achieve the transfer of the display chip 300. Therefore, in this embodiment, a photosensitive material with no adhesion or low adhesion can be used, thereby increasing the range of photosensitive material selection. Additionally, since the photosensitive material layer 220 can be made thinner, after the photosensitive material layer 220 is fabricated on the display chip 300, the etching process for the photosensitive material between the display chips 300 (e.g., etching between the display chips 300) can be omitted. Figure 1 The P2 process shown further simplifies the transfer steps of the display chip 300 and improves the transfer efficiency.

[0072] Secondly, in such as Figure 1 In the traditional LED chip transfer process, the photosensitive material in process P1 needs to have a certain adhesive strength. To achieve sufficient adhesive strength, the photosensitive material needs to be heated at high temperatures; therefore, process P1 is a high-temperature process. However, in this embodiment, the photosensitive material layer 220 does not need to have adhesive strength, so a room-temperature process can replace the traditional high-temperature process, further simplifying the process flow.

[0073] In step S500, the temporary substrate 200 is removed, and the display chip 300 is transferred to the display substrate via the transfer substrate 100.

[0074] In this embodiment, the second adhesive layer 210 can be debonded, and the display chip 300 can be detached from the temporary substrate 200 by the transfer substrate 100, resulting in the following: Figure 6 The structure shown. For example, as an example, the second adhesive layer 210 can also be a temporary bonding adhesive layer. Based on step S500, the second adhesive layer 210 can be debonded by performing a debonding process on the temporary bonding adhesive layer.

[0075] Furthermore, the method of transferring the display chip 300 onto the display substrate via the transfer substrate 100 can employ a conventional laser transfer method. For example, the transfer substrate 100, which picks up the display chip 300, is placed into a laser transfer device, and the transfer substrate 100 is irradiated with a laser by the laser transfer device, causing the display chip 300 to detach from the photosensitive material layer 220 and transfer onto the display substrate, thus completing the transfer of the display chip 300.

[0076] The display component can be obtained through the above method. In this embodiment, the display component can be a display panel (such as a Micro-LED panel) or an intermediate product component before the finished display panel is manufactured by the above method. This embodiment does not specifically limit this.

[0077] Furthermore, in one possible implementation of this application embodiment, for step S200, the display chip 300 is adhered to the second adhesive layer 210, which can also be achieved in the following manner.

[0078] First, the side of the display chip 300 containing the electrodes is attached to the second adhesive layer 210. Then, pressure is applied to the display chip 300 from the side opposite to the electrodes, so that the display chip 300 is at least partially embedded in the second adhesive layer 210. In this embodiment, the depth to which the display chip 300 is embedded in the second adhesive layer 210 is greater than 2 μm. For example, as an optional example, please refer to... Figure 7 As shown, the display chip 300 can be completely embedded within the second adhesive layer 210, and the surface of the display chip 300 facing away from the temporary substrate 200 is flush with the surface of the second adhesive layer 210 facing away from the temporary substrate 200. Thus, in step S300, the schematic diagram after coating the photosensitive material layer 220 from the side of the display chip 300 facing away from the temporary substrate 200 to form the photosensitive material layer 220 is as follows. Figure 8 As shown, compared to Figure 4 The difference lies in that the photosensitive material layer 220 is approximately a flat material layer covering the surfaces of the display chip 300 and the second adhesive layer 210. This arrangement makes it easier to ensure that the photosensitive material is distributed only on the side of the display chip 300 opposite to the temporary substrate 200 (the side opposite to the electrode of the display chip 300), which can reduce the LED landing point deviation caused by the reaction of the photosensitive material on the LED sidewall during subsequent laser transfer, and improve transfer accuracy.

[0079] Based on the above, the manufacturing method of the display component provided in this embodiment may further include the following steps S310-S330 before bonding the transfer substrate 100 to the temporary substrate 200 on which the display chip 300 is disposed in step S400.

[0080] Step S310, as follows Figure 9 As shown, a photoresist layer is formed on the photosensitive material layer 220, and the photoresist layer is patterned to form a photoresist pattern 230 corresponding to each of the display chips 300. The orthographic projection of the photoresist pattern 230 on the temporary substrate 200 coincides with the orthographic projection of the display chip 300 on the temporary substrate 200.

[0081] Step S320: Etch the photosensitive material layer 220 and the second adhesive layer 210 from the side of the photosensitive material layer 220 away from the temporary substrate 200 to remove the photosensitive material layer 220 and the second adhesive layer 210 between adjacent display chips 300.

[0082] Step S330: Remove the photoresist pattern located above the display chip 300 to obtain... Figure 10 The structure shown. After this, step S400 can be performed to pick up the display chip 300 from the temporary substrate 200 via the transfer substrate 100, thus obtaining... Figure 6 The structure shown is then used for subsequent laser transfer processes.

[0083] Furthermore, based on the above, this application embodiment also provides a display component manufactured by the above manufacturing method. The display component can be a display panel (such as a Micro-LED panel), or an intermediate product component before the finished display panel. Alternatively, the display component can be a product having the display panel, such as a Micro-LED display screen, and the product's presentation form can be, for example, a commercial display, a television (TV), a mobile phone, a smartwatch, an automotive screen, etc.

[0084] Furthermore, this application also provides a display chip transfer structure formed during the manufacturing process of the above-described manufacturing method.

[0085] In this embodiment, the display chip transfer structure is as follows: Figure 6The structure shown is as follows. The display chip transfer structure may include a transfer substrate 100, a first adhesive layer 110, a display chip 300, and a photosensitive material layer 220. The first adhesive layer 110 is located on the transfer substrate 100; for example, the first adhesive layer 110 is located on the surface of the transfer substrate 100 closest to the display chip 300. The photosensitive material layer 220 is located on the surface of the display chip 300 closest to the first adhesive layer 110 and is bonded to the first adhesive layer 110 to facilitate the transfer of the display chip 300 onto the display substrate via the transfer substrate 100.

[0086] Furthermore, to improve the transfer effect of the display chip transfer structure during the transfer process of the subsequent display chip 300, in this embodiment, the thickness of the photosensitive material layer is 0.1 μm to 0.8 μm, and preferably 0.7 μm. In addition, the photosensitive material layer 220 can be formed of a non-adhesive photosensitive material, and the second adhesive layer 210 has a laser absorption rate of less than or equal to 1%.

[0087] In summary, the manufacturing method, display component, and display chip transfer structure of the display component provided in this application directly fabricate the photosensitive material required in the laser transfer process of the display chip on the side of the display chip away from the temporary substrate, based on the temporary substrate on which the display chip is located. This ensures that the photosensitive material is only located on the surface of the display chip away from the temporary substrate, and that no photosensitive material adheres to the periphery of the display chip. This is beneficial because when the display chip is subsequently transferred through the transfer substrate, it will not be affected by any residual photosensitive material on the periphery of the display chip, thus avoiding misalignment of the landing point of the display chip during transfer and improving transfer accuracy.

[0088] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0089] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for manufacturing a display component, characterized in that, The method includes: A transfer substrate is provided, and a first adhesive layer is formed on the transfer substrate; A temporary substrate with a second adhesive layer is provided, and a display chip is adhered to the second adhesive layer; A photosensitive material layer is formed on the surface of the display chip facing away from the temporary substrate. The photosensitive material layer is made of a non-adhesive photosensitive material. The display chip has an inverted trapezoidal structure. The photosensitive material layer is located only on the light-emitting side of the display chip. The first adhesive layer is bonded to the photosensitive material layer formed on the display chip; The temporary substrate is removed, and the display chip is transferred to the display substrate via the transfer substrate.

2. The method for manufacturing a display component according to claim 1, characterized in that, The process of adhering the display chip to the second adhesive layer includes: The side of the display chip containing the electrodes is attached to the second adhesive layer; Pressure is applied to the display chip from the side opposite to the electrode to at least partially embed the display chip within the second adhesive layer.

3. The method for manufacturing a display component according to claim 1, characterized in that, The display chip is embedded in the second adhesive layer to a depth greater than 2 μm.

4. The method for manufacturing a display component according to claim 1, characterized in that, The display chip is completely embedded in the second adhesive layer, and the surface of the display chip facing away from the temporary substrate is flush with the surface of the second adhesive layer facing away from the temporary substrate.

5. The method for manufacturing a display component according to claim 2, characterized in that, Before bonding the transfer substrate to the temporary substrate on which the display chip is disposed, the method further includes: A photoresist layer is formed on the photosensitive material layer, and the photoresist layer is patterned to form a photoresist pattern corresponding to each of the display chips; wherein the orthographic projection of the photoresist pattern on the temporary substrate coincides with the orthographic projection of the display chip on the temporary substrate; The photosensitive material layer and the second adhesive layer are etched to remove the photosensitive material layer and the second adhesive layer between adjacent display chips; Remove the photoresist pattern located above the display chip.

6. The method for manufacturing a display component according to claim 1, characterized in that, The display chip has a height difference between the side facing away from the temporary substrate and the side of the second adhesive layer facing away from the temporary substrate, and the side of the display chip facing away from the temporary substrate is higher than the side of the second adhesive layer facing away from the temporary substrate.

7. The method for manufacturing a display component according to claim 1, characterized in that, The photosensitive material layer includes a first portion located on the display chip and a second portion located on the second adhesive layer. The first portion and the second portion are not in contact, and the second portion is not in contact with the display chip.

8. The method for manufacturing a display component according to claim 1, characterized in that, The thickness of the first adhesive layer is 0.2um-10um, and the thickness of the second adhesive layer is 0.1um-50um.

9. A method for manufacturing a display component according to any one of claims 1-8, characterized in that, The thickness of the photosensitive material layer is 0.2 μm to 0.8 μm.

10. A method for manufacturing a display component according to any one of claims 1-8, characterized in that, The thickness of the photosensitive material layer is 0.7 μm.

11. A display component, characterized in that, The display component is manufactured by the method described in any one of claims 1-10.

12. A display chip transfer structure, characterized in that, include: A transfer substrate, wherein a first adhesive layer is disposed on the transfer substrate; The display chip has a photosensitive material layer disposed on one side of its surface near the first adhesive layer. The photosensitive material layer is bonded to the first adhesive layer to facilitate the transfer of the display chip onto the display substrate via the transfer substrate. The photosensitive material layer is made of a non-adhesive photosensitive material. The display chip has an inverted trapezoidal structure, and the photosensitive material layer is located only on the light-emitting side of the display chip.

13. The display chip transfer structure according to claim 12, characterized in that, The thickness of the photosensitive material layer is 0.1 μm to 0.8 μm.

14. The display chip transfer structure according to claim 13, characterized in that, The thickness of the photosensitive material layer is 0.7 μm.

15. The display chip transfer structure according to any one of claims 12-14, characterized in that, The photosensitive material layer is formed from a non-adhesive photosensitive material.

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