A method for preparing a high-conductivity copper-based composite material

Abstract

The present invention provides a method for preparing a high-conductivity copper-based composite material, and relates to the technical field of composite material preparation. It comprises the following steps: S1, opening a regular-shaped groove on the surface of a copper foil, wherein the ratio of the groove depth to the copper foil thickness is 1:5, and the ratio of the regular-shaped groove area to the copper foil area is 3:10, to obtain a pretreated copper foil; S2, stacking the pretreated copper foil obtained in S1 and the graphene obtained by a chemical vapor deposition process into a matrix according to an area ratio of 6:1, and performing hot pressing under the conditions of a temperature of 850-1000°C, a sintering pressure of 60-130Mpa, and a sintering time of 15-22min to obtain a treated product. Through the above steps, the connection tightness between the materials can be increased, and a larger external force can be withstood, thereby improving the bearing capacity of the composite material; the thickness of the composite material can be increased, the application environment of the composite material is increased, and the overall structure is tight.

Description

Technical Field

[0001] The present invention relates to the technical field of composite material preparation, in particular to a method for preparing a high-conductivity copper-based composite material. Background Art

[0002] Copper-based composites are composite materials formed by adding other materials (such as aluminum, nickel, titanium, and ceramics) to a copper matrix. Copper-based composites exhibit excellent mechanical properties, electrical and thermal conductivity, and corrosion resistance, and are widely used in the aviation, automotive, electronics, and chemical industries.

[0003] In the related art, for example, announcement number CN 112458518 B discloses a method for preparing a high-conductivity copper-based composite material. The method uses copper foil as a substrate and utilizes an electrophoretic deposition method to deposit carbon quantum dots onto the copper foil substrate. Depending on the electrophoretic deposition parameters, an atmosphere furnace reduction treatment or a vacuum annealing treatment is selectively employed to ultimately obtain a high-conductivity carbon quantum dot-copper-based composite material.

[0004] The copper-based composite material is prepared using an electrophoretic deposition process. Although this preparation method can produce a copper-based composite material, the strength of the composite material is not ideal. Under the action of external forces, delamination and cracking are prone to occur, affecting the service life and application environment of the composite material. Summary of the Invention

[0005] (1) Technical problems solved

[0006] In response to the shortcomings of the existing technology, the present invention provides a method for preparing a high-conductivity copper-based composite material, which solves the problem that the strength of the composite material is not ideal, and it is easy to delaminate and crack under the action of external force, which affects the service life and application environment of the composite material.

[0007] (2) Technical solution

[0008] To achieve the above objectives, the present invention is implemented through the following technical solutions: A method for preparing a high-conductivity copper-based composite material, comprising the following steps:

[0009] S1. Regularly shaped grooves are formed on the surface of the copper foil, with the ratio of the groove depth to the copper foil thickness being 1:5 and the ratio of the regular shaped groove area to the copper foil area being 3:10, to obtain a pretreated copper foil;

[0010] S2. The pretreated copper foil obtained in S1 and the graphene obtained by chemical vapor deposition are stacked into a matrix in an area ratio of 6:1, and hot-pressed at a temperature of 850-1000° C., a sintering pressure of 60-130 MPa, and a sintering time of 15-22 min to obtain a treated product.

[0011] S3. For the treated product in S2, the carbon quantum dots are electrophoretically deposited onto the treated product in a carbon quantum dot aqueous dispersion having an electrolyte concentration of 12-15 mg / ml using an electrophoretic deposition process, and the deposited product is reduced in a reducing atmosphere at 450-580° C. for 0.5-1.5 hours to obtain a composite material.

[0012] Preferably, the copper foil of S1 has a thickness of 1-3 mm.

[0013] Preferably, the regularly shaped groove in S1 is one or more of a straight line shape, a cross shape, a T shape, and an N shape.

[0014] Preferably, the thickness of the graphene in S2 is 0.8-1.5 mm.

[0015] Preferably, the stacking method in S2 is center stacking or eccentric stacking.

[0016] Preferably, the electrode sheet of the electrophoretic deposition process is a platinum sheet electrode.

[0017] Preferably, the reducing atmosphere is a mixture of carbon monoxide and one or more of nitrogen, argon and helium in any proportion.

[0018] (3) Beneficial effects

[0019] The present invention provides a method for preparing a high-conductivity copper-based composite material. It has the following beneficial effects:

[0020] 1. By opening regular-shaped grooves, the connection tightness between materials can be increased, and the composite material can withstand greater external forces, thereby improving its bearing capacity.

[0021] 2. Through the compounding of graphene and carbon quantum dots, the thickness of the composite material can be increased, the application environment of the composite material is expanded, and the overall structure is compact. DETAILED DESCRIPTION

[0022] The following is a clear and complete description of the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention. Example 1:

[0023] An embodiment of the present invention provides a method for preparing a high-conductivity copper-based composite material, comprising the following steps:

[0024] S1. A T-shaped groove is formed on the surface of a copper foil having a thickness of 1-3 mm, wherein the ratio of the groove depth to the copper foil thickness is 1:5 and the ratio of the T-shaped groove area to the copper foil area is 3:10, thereby obtaining a pretreated copper foil;

[0025] S2, stacking the pretreated copper foil obtained in S1 and graphene with a thickness of 0.8 mm obtained by chemical vapor deposition into a matrix at an area ratio of 6:1, and hot pressing the matrix at a temperature of 850° C., a sintering pressure of 60 MPa, and a sintering time of 22 min to obtain a processed product;

[0026] S3. For the treated product in S2, the carbon quantum dots are electrophoretically deposited onto the treated product in a carbon quantum dot aqueous dispersion with an electrolyte concentration of 12 mg / ml using an electrophoretic deposition process using a platinum electrode, and the deposited product is reduced at 450°C for 1.5 hours in a reducing atmosphere of carbon monoxide and nitrogen to obtain a composite material.

[0027] The composite material of this embodiment has strong connection tightness and anti-delamination performance. Example 2:

[0028] An embodiment of the present invention provides a method for preparing a high-conductivity copper-based composite material, comprising the following steps:

[0029] S1. Opening an N-shaped groove on the surface of the copper foil, with a ratio of the groove depth to the copper foil thickness of 1:5 and a ratio of the N-shaped groove area to the copper foil area of ​​3:10, to obtain a pretreated copper foil;

[0030] S2, stacking the pretreated copper foil obtained in S1 and the graphene with a thickness of 1.5 mm obtained by chemical vapor deposition into a matrix at an area ratio of 6:1, and hot pressing the matrix at a temperature of 1000° C., a sintering pressure of 130 MPa, and a sintering time of 15 min to obtain a processed product;

[0031] S3. For the treated product in S2, the carbon quantum dots are electrophoretically deposited onto the treated product in a carbon quantum dot aqueous dispersion with an electrolyte concentration of 15 mg / ml using an electrophoretic deposition process using a platinum electrode, and the deposited product is reduced at 550°C for 1 hour under a reducing atmosphere to obtain a composite material.

[0032] The composite material of this embodiment has strong connection tightness and anti-delamination performance. Example 3:

[0033] An embodiment of the present invention provides a method for preparing a high-conductivity copper-based composite material, comprising the following steps:

[0034] S1. A cross-shaped groove is formed on the surface of the copper foil, wherein the ratio of the groove depth to the copper foil thickness is 1:5 and the ratio of the cross-shaped groove area to the copper foil area is 3:10, thereby obtaining a pretreated copper foil;

[0035] S2, the pretreated copper foil obtained in S1 and the graphene with a thickness of 1 mm obtained by chemical vapor deposition are eccentrically stacked into a substrate at an area ratio of 6:1, and hot pressed at a temperature of 900° C., a sintering pressure of 110 MPa, and a sintering time of 17 min to obtain a treated product;

[0036] S3. For the treated product in S2, the carbon quantum dots are electrophoretically deposited onto the treated product in a carbon quantum dot aqueous dispersion with an electrolyte concentration of 14 mg / ml using an electrophoretic deposition process using a platinum electrode, and the deposited product is reduced at 550°C for 1.2 hours under a reducing atmosphere to obtain a composite material.

[0037] The composite material of this embodiment has strong connection tightness and anti-delamination performance. Example 4:

[0038] An embodiment of the present invention provides a method for preparing a high-conductivity copper-based composite material, comprising the following steps:

[0039] S1. A straight groove is formed on the surface of the copper foil, wherein the ratio of the groove depth to the copper foil thickness is 1:5, and the ratio of the straight groove area to the copper foil area is 3:10, to obtain a pretreated copper foil;

[0040] S2, stacking the pretreated copper foil obtained in S1 and graphene with a thickness of 1.2 mm obtained by chemical vapor deposition into a substrate at an area ratio of 6:1, and hot pressing the substrate at a temperature of 1000° C., a sintering pressure of 120 MPa, and a sintering time of 20 min to obtain a treated product;

[0041] S3. For the treated product in S2, the carbon quantum dots are electrophoretically deposited onto the treated product in a carbon quantum dot aqueous dispersion with an electrolyte concentration of 13 mg / ml using an electrophoretic deposition process using a platinum electrode, and the deposited product is reduced at 500°C for 1 hour under a reducing atmosphere to obtain a composite material.

[0042] The composite material of this embodiment has strong connection tightness and anti-delamination performance.

[0043] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a high conductivity copper-based composite material, characterized in that: The following steps are involved: S1. Regularly shaped grooves are formed on the surface of the copper foil, with the ratio of the groove depth to the copper foil thickness being 1:5 and the ratio of the regular shaped groove area to the copper foil area being 3:10, to obtain a pretreated copper foil; S2. The pretreated copper foil obtained in S1 and the graphene obtained by chemical vapor deposition are stacked into a matrix in an area ratio of 6:1, and hot-pressed at a temperature of 850-1000° C., a sintering pressure of 60-130 MPa, and a sintering time of 15-22 min to obtain a treated product. S3. For the treated product in S2, the carbon quantum dots are electrophoretically deposited onto the treated product in a carbon quantum dot aqueous dispersion having an electrolyte concentration of 12-15 mg / ml using an electrophoretic deposition process, and the deposited product is reduced in a reducing atmosphere at 450-580° C. for 0.5-1.5 hours to obtain a composite material.

2. The method for preparing a high-conductivity copper-based composite material according to claim 1, wherein: The copper foil thickness of S1 is 1-3 mm.

3. The method for preparing a high-conductivity copper-based composite material according to claim 1, wherein: The regular-shaped groove in S1 is one or more of a straight-line shape, a cross shape, a T shape, and an N shape.

4. The method for preparing a high-conductivity copper-based composite material according to claim 1, wherein: The thickness of the graphene in S2 is 0.8-1.5 mm.

5. The method for preparing a high-conductivity copper-based composite material according to claim 1, wherein: The stacking method in S2 is a center stacking method or an eccentric stacking method.

6. The method for preparing a high-conductivity copper-based composite material according to claim 1, wherein: The electrode sheet of the electrophoretic deposition process is a platinum sheet electrode.

7. The method for preparing a high-conductivity copper-based composite material according to claim 1, wherein: The reducing atmosphere is a mixture of carbon monoxide and one or more of nitrogen, argon and helium in any proportion.