Magnesium hexafluorozirconate near-infrared luminescent material, preparation method and application thereof

Abstract

This invention discloses a magnesium hexafluorozirconate near-infrared luminescent material, its preparation method, and its applications. The near-infrared luminescent material has the chemical composition of Mg. (1‑x‑m) Zr (1‑y‑n) F6:(x+y)Cr 3+ ,(m+n)In 3+ ; among which, 0

Description

Technical Field

[0001] This invention relates to the field of near-infrared luminescent materials technology, and in particular to a magnesium hexafluorozirconate near-infrared luminescent material, its preparation method, and its application. Background Technology

[0002] Near-infrared light, due to its deep penetration into biological tissues, harmlessness to body tissues, and the characteristic absorption of organic matter in the near-infrared band, has great application potential in fields such as biological tissue imaging, night vision imaging, plant growth, and non-destructive testing of food. Early near-infrared light sources included incandescent lamps, halogen lamps, and near-infrared light-emitting diodes (LEDs), but they suffered from large size, low efficiency, narrow spectral bands, and long response times, limiting their application range. Inspired by white LEDs, fluorescent-to-light-emitting diodes (NIR pc-LEDs) have been fabricated by combining near-infrared phosphors and blue light chips. This enables high-efficiency near-infrared emission across a wide spectral band. Furthermore, due to the small size of fluorescent-to-light-emitting diodes, they can be integrated into portable smart devices such as mobile phones, demonstrating significant application potential.

[0003] Near-infrared phosphors are a core component of NIR pc-LEDs, and their performance directly affects the spectral properties of NIR pc-LEDs. A large amount of related research revolves around the transition metal ion Cr. 3+ High-efficiency near-infrared emission can be achieved by doping oxide matrices, such as garnet-structured phosphors (Ca3Sc2Si3O4). 12 :Cr 3+ Lu3Sc2Ga3O 12 :Cr 3+ ), calcium magnesium carbonate structured phosphor (GdAl3(BO3)4:Cr 3+ YAl3(BO3)4:Cr 3+ / Yb 3+ These oxide matrix phosphors, such as those used in the near-infrared luminescence process, exhibit high efficiency and wide spectral bandwidth.

[0004] However, the synthesis of oxide-based near-infrared phosphors typically requires operating temperatures exceeding 1000 degrees Celsius, resulting in high energy consumption. Furthermore, the dopant ions are easily oxidized at high temperatures, which is detrimental to near-infrared luminescence. Research on phosphors using other matrix types is very limited. Some studies have shown the use of fluorides as a matrix, with Cr doped into it. 3+ Ions can also achieve efficient broadband near-infrared emission, exhibit good thermal stability, and can synthesize fluorides at relatively low temperatures. However, it is currently difficult to achieve near-infrared emission with wavelengths exceeding 850 nm in a fluoride matrix. The lack of near-infrared spectral band limits the application of fluoride near-infrared phosphors in food detection, human eye recognition, and other fields. These characteristics all indicate that Cr... 3+Ion-doped fluoride near-infrared phosphor is a new type of ideal near-infrared phosphor that can be applied in practice, and it is of great significance for exploring long-wavelength near-infrared phosphors with broadband and efficient emission doped with Cr 3+ ions in non-oxide matrices. Summary of the Invention

[0005] To overcome the disadvantages and deficiencies of the prior art, the purpose of the present invention is to provide a new type of trivalent chromium ion (Cr 3+ ) doped or trivalent chromium ion (Cr 3+ ) and indium ion (In 3+ ) co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material, whose near-infrared emission range is 650 - 1200 nm, the emission peak is located at 840 nm - 906 nm, and the full width at half maximum is about 200 nm, which can be applied to the fields of non-destructive food detection and human eye recognition.

[0006] The second purpose of the present invention is to provide a preparation method and application of the above-mentioned magnesium hexafluorozirconate near-infrared luminescent material.

[0007] The purpose of the present invention is achieved by the following technical solutions:

[0008] A magnesium hexafluorozirconate near-infrared luminescent material with a chemical composition of Mg (1-x-m) Zr (1-y-n) F6:(x + y)Cr 3+ ,(m + n)In 3+ ; where x is the molar percentage coefficient of the doped ion Cr 3+ relative to Mg 2+ , 0 < x ≤ 0.2; y is the molar percentage coefficient of the doped ion Cr 3+ relative to Zr 4+ , 0 < y ≤ 0.2; m is the molar percentage coefficient of the doped ion In 3+ relative to Mg 2+ , 0 ≤ m ≤ 0.2; n is the molar percentage coefficient of the doped ion In 3+ relative to Zr 4+ , 0 ≤ n ≤ 0.2.

[0009] Preferably, 0.01 ≤ x + y ≤ 0.2, m + n = 0.

[0010] Preferably, 0.01 ≤ x + y ≤ 0.2, 0.03 ≤ m + n ≤ 0.18.

[0011] Preferably, under the excitation of blue light at 400 - 510 nm, the near-infrared luminescent material can achieve broadband near-infrared luminescence with the main emission peak located at 840 nm - 906 nm.

[0012] The above-mentioned preparation method of magnesium hexafluorozirconate near-infrared luminescent material adopts a hydrothermal method and includes the following steps:

[0013] (1) Weighing materials: Weigh magnesium source, zirconium source, chromium source and indium source according to stoichiometric ratio;

[0014] (2) Add the material weighed in step (1) to the hydrofluoric acid solution, stir and mix evenly, and carry out hydrothermal reaction;

[0015] (3) The solution obtained from the hydrothermal reaction in step (2) is further processed to obtain magnesium hexafluorozirconate near-infrared luminescent material.

[0016] Preferably, the magnesium source in step (1) is magnesium acetate, the zirconium source is zirconium oxide, the chromium source is chromium fluoride, and the indium source is indium oxide;

[0017] Preferably, the hydrofluoric acid solution in step (2) is a solution with a mass fraction of 40-60%; more preferably, the hydrofluoric acid solution in step (2) is a solution with a mass fraction of 49%.

[0018] Preferably, the hydrothermal reaction in step (2) is carried out at a temperature of 200-240°C for 5-15 hours. More preferably, the hydrothermal reaction in step (2) is carried out at a temperature of 220°C for 10 hours.

[0019] Preferably, the subsequent processing in step (3) includes centrifugation, washing, and drying.

[0020] More preferably, the washing is performed using deionized water and ethanol.

[0021] More preferably, the drying temperature is 60-80℃, more preferably 70℃; and the drying time is 2-4h, more preferably 3h.

[0022] The above-mentioned magnesium hexafluorozirconate near-infrared luminescent material is used in the preparation of near-infrared luminescent devices.

[0023] The near-infrared luminescent material of this invention can be effectively excited by blue and red light, emitting highly efficient near-infrared light with tunable wavelength (840–906 nm); co-doped ln 3+ Ions have the effect of enhancing near-infrared luminescence and redshifting the spectrum of near-infrared luminescent materials; Cr 3+ ,ln 3+ The near-infrared luminescence intensity of the co-doped magnesium hexafluorozirconate phosphor is significantly stronger than that of Cr. 3+ Magnesium hexafluorozirconate phosphor.

[0024] Compared with the prior art, the advantages and positive effects of this invention are:

[0025] (1) The synthesis temperature of the present invention is lower than that of oxide near-infrared fluorescent materials, the preparation process is simple, the energy consumption is low, and it can be industrialized on a large scale.

[0026] (2) Cr synthesized in this invention 3+ Doped MgZrF6 near-infrared fluorescent materials exhibit near-infrared emission properties and good thermal stability.

[0027] (3) Cr synthesized in this invention 3+ ,ln 3+ Heterovalent co-doped MgZrF6 near-infrared fluorescent materials can achieve wider and longer near-infrared emission compared to most reported fluoride near-infrared fluorescent materials, and can be applied in the fields of non-destructive testing of food and human eye recognition. Attached Figure Description

[0028] Figure 1 (MgZr) prepared in Example 4 0.93 F6:0.07Cr 3+ 0.07ln 3+ XRD pattern of near-infrared luminescent material.

[0029] Figure 2 (MgZr) prepared in Example 1 0.965 F6:0.07Cr 3+ Excitation-emission spectra of near-infrared luminescent materials.

[0030] Figure 3 (MgZr) prepared in Example 4 0.93 F6:0.07Cr 3+ 0.07ln 3+ Excitation-emission spectra of near-infrared luminescent materials.

[0031] Figure 4 (MgZr) prepared in Example 4 0.93 F6:0.07Cr 3+ 0.07ln 3+ Temperature-dependent spectra of near-infrared luminescent materials.

[0032] Figure 5 (MgZr) prepared in Example 1 0.965 F6:0.07Cr 3+ Near-infrared luminescent materials and (MgZr) prepared in Example 4 0.93 F6:0.07Cr 3+ 0.07ln 3+ Comparison of emission spectra of near-infrared luminescent materials. Detailed Implementation

[0033] The technical solutions of the present invention will be further described below with reference to specific embodiments and accompanying drawings. However, the following embodiments are only for enhancing the illustration of the technical solutions of the present invention and should not be construed as any limitation on the scope of the claimed invention. Furthermore, the described embodiments are merely some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, any modifications, equivalent substitutions, improvements, etc., made by those skilled in the art without creative effort to obtain all other embodiments should be included within the protection scope of the present invention.

[0034] Example 1

[0035] A type of Cr 3+ Solely doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3+ Preparation of )

[0036] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.6556 g, 7.72 mmol), zirconium oxide (ZrO₂) (0.9513 g, 7.72 mmol), and chromium fluoride (CrF₃) (0.061 g, 0.56 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until dissolved. The reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The resulting solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ Near-infrared luminescent materials.

[0037] Near-infrared luminescent material MgZrF6:0.07Cr 3+ Under the excitation of a GaN blue light chip, its excitation-emission spectrum is as follows: Figure 2 As shown, this indicates that MgZrF6:0.07Cr 3+ When excited by 474nm blue light, it can emit a broadband near-infrared spectral band with an emission peak at 840nm and a half-width at half-maximum of 143nm. This near-infrared luminescent material has good thermal stability and retains 73% of its initial emission intensity at 100℃.

[0038] Example 2

[0039] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.03ln 3+ Preparation of )

[0040] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.6298 g, 7.6 mmol), zirconium oxide (ZrO₂) (0.9365 g, 7.6 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.0333 g, 0.12 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.03ln 3+ Near-infrared luminescent materials.

[0041] The excitation spectrum of this near-infrared luminescent material consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.03ln 3+ Under blue light excitation, it produces broadband near-infrared emission with a peak position of 894 nm and a full width at half maximum (FWHM) of 205 nm. Furthermore, this near-infrared luminescent material exhibits good thermal stability, retaining 60.8% of its initial emission intensity at 100 °C.

[0042] Example 3

[0043] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.05ln 3+ Preparation of )

[0044] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.6127 g, 7.52 mmol), zirconium oxide (ZrO₂) (0.9266 g, 7.52 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.0555 g, 0.2 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.05ln 3+ Near-infrared luminescent materials.

[0045] The excitation spectrum of this near-infrared luminescent material consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.05ln 3+ Under blue light excitation, it produces broadband near-infrared emission with a peak position of 896 nm and a full width at half maximum (FWHM) of 205 nm. Furthermore, this near-infrared luminescent material exhibits good thermal stability, retaining 54.4% of its initial emission intensity at 100 °C.

[0046] Example 4

[0047] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.07ln 3+ Preparation of )

[0048] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.5955 g, 7.44 mmol), zirconium oxide (ZrO₂) (0.9168 g, 7.44 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.0777 g, 0.28 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.07ln 3+ Near-infrared luminescent materials.

[0049] The XRD pattern of the near-infrared luminescent material is as follows: Figure 1 As shown in the figure, the XRD pattern of this near-infrared luminescent material matches the standard pattern of MgZrF6, indicating that the prepared material is a pure phase target material. The excitation-emission spectrum of this near-infrared luminescent material is as follows: Figure 3 As shown, the excitation spectrum consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.07ln 3+Broadband near-infrared emission with a peak position of 900 nm and a full width at half maximum (FWHM) of 206 nm is generated under blue light excitation. Furthermore, this near-infrared luminescent material exhibits good thermal stability, retaining 52.1% of its initial emission intensity at 100 °C. Figure 4 ).

[0050] (MgZr) prepared in Example 1 0.965 F6:0.07Cr 3+ Near-infrared luminescent materials and (MgZr) prepared in Example 4 0.93 F6:0.07Cr 3+ 0.07ln 3+ A comparison of the emission spectra of near-infrared luminescent materials is shown below. Figure 5 As shown in the figure, it can be seen that co-doping ln 3+ Able to regulate Cr 3+ The crystal field environment weakens Cr 3+ -Cr 3+ This has an effect, thus making (MgZr) 0.93 F6:0.07Cr 3+ 0.07ln 3+ Near-infrared luminescent materials relative to (MgZr) 0.965 F6:0.07Cr 3+ The near-infrared emission integral intensity of the near-infrared luminescent material is increased by 5.3 times, and the emission peak position is redshifted from 840nm to 900nm, while the full width at half maximum (FWHM) is broadened from 143nm to 200nm.

[0051] Example 5

[0052] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.09ln 3+ Preparation of )

[0053] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.5784 g, 7.36 mmol), zirconium oxide (ZrO₂) (0.9069 g, 7.36 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.1 g, 0.36 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.09ln3+ Near-infrared luminescent materials.

[0054] The excitation spectrum of this near-infrared luminescent material consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.09ln 3+ Under blue light excitation, this material exhibits broadband near-infrared emission with a peak at 900 nm and a full width at half maximum (FWHM) of 205 nm. Furthermore, it demonstrates good thermal stability, retaining 51.3% of its initial emission intensity at 100 °C.

[0055] Example 6

[0056] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.12ln 3+ Preparation of )

[0057] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.5526 g, 7.24 mmol), zirconium oxide (ZrO₂) (0.8921 g, 7.24 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.133 g, 0.48 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.12ln 3+ Near-infrared luminescent materials.

[0058] The excitation spectrum of this near-infrared luminescent material consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.12ln 3+ Under blue light excitation, this material exhibits broadband near-infrared emission with a peak position of 900 nm and a full width at half maximum (FWHM) of 204 nm. Furthermore, it demonstrates good thermal stability, retaining 53.7% of its initial emission intensity at 100 °C.

[0059] Example 7

[0060] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.15ln 3+ Preparation of )

[0061] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.5269 g, 7.12 mmol), zirconium oxide (ZrO₂) (0.8773 g, 7.12 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.1666 g, 0.6 mmol) were weighed and dissolved in 10 mL of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.15ln 3+ Near-infrared luminescent materials.

[0062] The excitation spectrum of this near-infrared luminescent material consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.15ln 3+ Under blue light excitation, it produces broadband near-infrared emission with a peak position of 904 nm and a full width at half maximum (FWHM) of 207 nm. Furthermore, this near-infrared luminescent material exhibits good thermal stability, retaining 55% of its initial emission intensity at 100 °C.

[0063] Example 8

[0064] A type of Cr 3+ ,ln 3+ Heterovalently co-doped magnesium hexafluorozirconate long-wavelength broadband near-infrared luminescent material (MgZrF6:0.07Cr) 3 + 0.18ln 3+ Preparation of )

[0065] Magnesium acetate (Mg(C₂H₃O₂)₂) (1.5012 g, 7 mmol), zirconium oxide (ZrO₂) (0.8625 g, 7 mmol), chromium fluoride (CrF₃) (0.061 g, 0.56 mmol), and indium oxide (ln₂O₃) (0.1999 g, 0.72 mmol) were weighed and dissolved in 10 ml of hydrofluoric acid (49 wt.%). The mixture was stirred at room temperature for 30 minutes until the raw materials were dissolved. The mixed reaction solution was transferred to a hydrothermal oven and reacted at 220 °C for 10 hours. The reacted solution was washed twice with deionized water and once with ethanol by centrifugation, and then dried at 70 °C for 3 hours to obtain MgZrF₆:0.07Cr 3+ 0.18ln 3+ Near-infrared luminescent materials.

[0066] The excitation spectrum of this near-infrared luminescent material consists of three broadband bands at 308 nm, 480 nm, and 718 nm. The strongest excitation band (480 nm) perfectly matches the blue light emitted by the GaN blue LED chip. Therefore, the near-infrared luminescent material MgZrF6:0.07Cr... 3+ 0.18ln 3+ Under blue light excitation, it produces broadband near-infrared emission with a peak position of 906 nm and a full width at half maximum (FWHM) of 210 nm. Furthermore, this near-infrared luminescent material exhibits good thermal stability, retaining 51.3% of its initial emission intensity at 100 °C.

[0067] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments described above. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. A magnesium hexafluorozirconate near-infrared luminescent material, characterized in that, The chemical composition is Mg (1-x-m) Zr (1-y-n) F6:(x + y)Cr 3+ , (m + n)In 3+ ; where x is the molar percentage coefficient of the doping ion Cr 3+ relative to Mg 2+ , 0 < x ≤ 0.2; y is the molar percentage coefficient of the doping ion Cr 3+ relative to Zr 4+ , 0 < y ≤ 0.2; m is the molar percentage coefficient of the doping ion In 3+ relative to Mg 2+ , 0 ≤ m ≤ 0.2; n is the molar percentage coefficient of the doping ion In 3+ relative to Zr 4+ , 0 ≤ n ≤ 0.2; 0.01 ≤ x + y ≤ 0.2, 0.03 ≤ m + n ≤ 0.

18.

2. The magnesium hexafluorozirconate near-infrared luminescent material according to claim 1, characterized in that, When excited by blue light at 400-510 nm, the near-infrared luminescent material can achieve broadband near-infrared emission with the main emission peak located at 840 nm-906 nm.

3. The method for preparing the magnesium hexafluorozirconate near-infrared luminescent material according to any one of claims 1-2, characterized in that, The preparation method is hydrothermal, and includes the following steps: (1) Weighing materials: Weigh magnesium source, zirconium source, chromium source and indium source according to stoichiometric ratio; (2) Add the material weighed in step (1) to the hydrofluoric acid solution, stir and mix evenly, and carry out hydrothermal reaction; (3) The solution obtained from the hydrothermal reaction in step (2) is further processed to obtain magnesium hexafluorozirconate near-infrared luminescent material.

4. The preparation method according to claim 3, characterized in that, The magnesium source in step (1) is magnesium acetate, the zirconium source is zirconium oxide, the chromium source is chromium fluoride, and the indium source is indium oxide; The hydrofluoric acid solution in step (2) is a solution with a mass fraction of 40-60%.

5. The preparation method according to claim 3, characterized in that, The hydrothermal reaction in step (2) is carried out at a temperature of 200-240℃ for 5-15 hours.

6. The preparation method according to claim 3, characterized in that, The subsequent processing in step (3) includes centrifugation, washing, and drying.

7. The preparation method according to claim 6, characterized in that, The washing process involves washing with deionized water and ethanol; the drying process is carried out at a temperature of 60-80°C for 2-4 hours.

8. The application of the magnesium hexafluorozirconate near-infrared luminescent material according to any one of claims 1-2 in the preparation of near-infrared luminescent devices.

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