Method and system for preparing electronic components with side metallization interconnection

Abstract

The present invention relates to the technical field of electronic component processing, and specifically discloses a method and system for preparing electronic components with side metallization interconnection, the method comprising: performing single-sided metallization processing on a cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate; etching a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate in sequence to obtain a patterned single-sided metallized ceramic substrate; cutting the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate, and performing film forming processing on the back and target side of the patterned single-sided metallized ceramic substrate to obtain a ceramic thin film substrate with three-sided metallization interconnection; heat treating and processing the ceramic thin film substrate with three-sided metallization interconnection to obtain an electronic component with side metallization interconnection. The present invention can improve the efficiency of preparing electronic components with side metallization interconnection, and is suitable for preparing electronic components of any size.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic component processing, and in particular to a method and system for preparing electronic components with side metallization interconnection. Background Art

[0002] In recent years, the demand for thin film integrated circuits in the field of multifunctional, high power, low loss and miniaturized chip packaging has been increasing, resulting in small packaging space and complex assembly structure, which has forced electronic components to develop towards miniaturization, low power consumption, intelligence and high reliability. Usually, electronic components are single-sided or double-sided metallized structures, with a long production history, simple process preparation and mature technology.

[0003] However, in order to meet the demand for miniaturization, electronic components have shifted from single-sided metallization and double-sided metallization to three-sided metallization and four-sided metallization. Three-sided metallization and four-sided metallization refer to the metallization of the front and back sides of the substrate, and then the single-sided or double-sided metallization is used to form interconnections. The difficulty of the process preparation has increased significantly. At present, the common process preparation method for achieving three-sided or four-sided metallization interconnection is: double-sided film metallization of the ceramic substrate, graphicization of the product by photolithography, and then unitization of the product by a dicing machine. Finally, the side film formation is carried out by designing a fixture to achieve the purpose of side metallization interconnection. However, the disadvantage is low efficiency and difficulty in designing and preparing fixtures for small-sized products.

[0004] Therefore, it is urgent to provide a technical solution to solve the above problems. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides a method and system for preparing electronic components with side metallization interconnection.

[0006] In a first aspect, the present invention provides a method for preparing an electronic component with side metallization interconnection, and the technical solution of the method is as follows:

[0007] Performing single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate;

[0008] Sequentially etching a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate;

[0009] Cutting the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate, and performing film forming treatment on the back side and the target side of the patterned single-sided metallized ceramic substrate to obtain a ceramic thin film substrate with three-sided metallization interconnection;

[0010] The ceramic thin film substrate with metallization interconnection on three sides is heat treated and processed to obtain electronic components with metallization interconnection on side sides.

[0011] The beneficial effects of the method for preparing an electronic component with side metallization interconnection of the present invention are as follows:

[0012] The method of the invention can improve the efficiency of preparing electronic components with side metallization interconnection, and is suitable for preparing electronic components of any size.

[0013] On the basis of the above scheme, the method for preparing an electronic component with side metallization interconnection of the present invention can also be improved as follows.

[0014] In an optional manner, the step of performing single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate includes:

[0015] The target composite metal layer is used to perform single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate.

[0016] In an optional manner, the step of sequentially etching a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate includes:

[0017] The target electrode pattern and the target resistor pattern are sequentially etched on the single-sided metallized ceramic substrate by using a photolithography machine and a mask plate to obtain the patterned single-sided metallized ceramic substrate.

[0018] In an optional manner, the step of cutting the patterned single-sided metallized ceramic substrate along the target side surface of the patterned single-sided metallized ceramic substrate comprises:

[0019] The patterned single-sided metallized ceramic substrate is cut along the target side of the patterned single-sided metallized ceramic substrate and in a target cutting manner using a dicing machine; wherein the target cutting manner is: cutting 90% of the length of the patterned single-sided metallized ceramic substrate to reserve an edge area of ​​the patterned single-sided metallized ceramic substrate.

[0020] In an optional manner, the step of cutting the patterned single-sided metallized ceramic substrate includes:

[0021] The patterned single-sided metallized ceramic substrate is cut according to a ratio of a preset width to a preset length of the original ceramic substrate.

[0022] In an optional manner, the step of performing film forming treatment on the back side and the target side of the patterned single-sided metallized ceramic substrate comprises:

[0023] The back side and the target side of the patterned single-sided metallized ceramic substrate are subjected to film forming treatment by using a sputtering device.

[0024] In the above optional manner, the back side and the side surface of the patterned single-sided metallized ceramic substrate are subjected to film forming treatment at the same time, so as to achieve the purpose of forming a film on the back side and the target side surface at the same time.

[0025] In an optional manner, the step of heat treating and processing the ceramic thin film substrate with metallization interconnection on three sides to obtain an electronic component with metallization interconnection on the side includes:

[0026] Heat-treating the ceramic thin film substrate with metallized interconnections on the side surfaces to obtain a three-sided metallized ceramic thin film substrate after heat treatment;

[0027] The three-sided metallized ceramic thin film substrate after heat treatment is cut into units by using a dicing machine, and then sorted, inspected and packaged for storage in sequence to obtain the electronic components with metallized interconnections on the side surfaces.

[0028] In a second aspect, the present invention provides a system for preparing electronic components with side metallization interconnection, and the technical solution of the system is as follows:

[0029] It includes: a first processing module, a second processing module, a third processing module and a preparation module;

[0030] The first processing module is used to: perform single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate;

[0031] The second processing module is used to: sequentially etch a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate;

[0032] The third processing module is used to: cut the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate, and perform film forming treatment on the back side and the target side of the patterned single-sided metallized ceramic substrate to obtain a ceramic thin film substrate with three-sided metallization interconnection;

[0033] The preparation module is used to: perform heat treatment and processing on the three-sided metallized ceramic thin film substrate to obtain electronic components with metallized interconnections on the side surfaces.

[0034] The beneficial effects of the electronic component manufacturing system with side metallization interconnection of the present invention are as follows:

[0035] The system of the present invention can improve the efficiency of preparing electronic components with side metallization interconnection, and is suitable for preparing electronic components of any size.

[0036] On the basis of the above solution, the system for preparing electronic components with side metallization interconnection of the present invention can also be improved as follows.

[0037] In an optional manner, the first processing module is specifically used to:

[0038] The target composite metal layer is used to perform single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate.

[0039] In an optional manner, the second processing module is specifically used to:

[0040] The target electrode pattern and the target resistor pattern are sequentially etched on the single-sided metallized ceramic substrate by using a photolithography machine and a mask plate to obtain the patterned single-sided metallized ceramic substrate.

[0041] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The accompanying drawings are only used to illustrate the embodiments and are not to be considered as limiting the present invention. In addition, the same reference symbols are used to represent the same components throughout the accompanying drawings. In the accompanying drawings:

[0043] Figure 1 A schematic flow chart of an embodiment of a method for preparing an electronic component with side metallization interconnection according to the present invention;

[0044] Figure 2 The figure is a schematic diagram of the overall process;

[0045] Figure 3 is a schematic diagram of a single-sided metallized ceramic substrate;

[0046] Figure 4 is a schematic diagram of a patterned single-sided metallized ceramic substrate;

[0047] Figure 5 A schematic diagram of a ceramic thin film substrate with side metallization;

[0048] Figure 6 A schematic diagram of an electronic component with side metallization interconnection;

[0049] Figure 7 It is a schematic structural diagram of an embodiment of a system for preparing electronic components with side metallization interconnection of the present invention. DETAILED DESCRIPTION

[0050] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein.

[0051] Figure 1 The schematic diagram of the process of an embodiment of a method for preparing an electronic component with side metallization interconnection provided by the present invention is shown. Figure 1 As shown, the following steps are included:

[0052] S1. Performing single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate. Wherein:

[0053] ① The original ceramic substrate is: any ceramic substrate selected according to user needs.

[0054] ② Single-sided metallization processing refers to: metallization processing on the front or back side of the ceramic substrate.

[0055] ③ Single-sided metallized ceramic substrate refers to a ceramic substrate obtained by metallizing the original ceramic substrate on one side.

[0056] S2, sequentially etching the target electrode pattern and the target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate.

[0057] ① In this embodiment, etching needs to be performed in the patterning process.

[0058] ② The target electrode pattern and the target resistor pattern are etched according to the user's needs.

[0059] S3, cutting the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate, and performing film forming treatment on the back side and the target side of the patterned single-sided metallized ceramic substrate to obtain a ceramic thin film substrate with three-sided metallization interconnection. Wherein:

[0060] The target side is: a side of the ceramic substrate that needs to be metallized and is preset by the user.

[0061] S4, heat-treating and processing the three-sided metallized ceramic thin film substrate to obtain electronic components with metallized interconnections on the sides.

[0062] ① Electronic components can be any electronic components such as resistors, capacitors, inductors, etc., without any restrictions.

[0063] ② The electronic components with side metallization interconnection are: a ceramic substrate with side metallization interconnection of electronic component units evenly distributed.

[0064] Preferably, S1 includes:

[0065] The target composite metal layer is used to perform single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate.

[0066] The target composite metal layer is a composite metal layer prepared according to the user's film system requirements.

[0067] Preferably, S2 includes:

[0068] The target electrode pattern and the target resistor pattern are sequentially etched on the single-sided metallized ceramic substrate by using a photolithography machine and a mask plate to obtain the patterned single-sided metallized ceramic substrate.

[0069] Among them, the process of etching using a photolithography machine and a mask is a prior art, and its principle will not be elaborated here.

[0070] Preferably, the step of cutting the patterned single-sided metallized ceramic substrate along the target side surface of the patterned single-sided metallized ceramic substrate comprises:

[0071] The patterned single-sided metallized ceramic substrate is cut along the target side surface of the patterned single-sided metallized ceramic substrate according to a target cutting method by using a dicing machine.

[0072] The target cutting method is: cutting 90% of the length of the patterned single-sided metallized ceramic substrate to reserve 10% of the edge area of ​​the patterned single-sided metallized ceramic substrate.

[0073] Preferably, the step of cutting the patterned single-sided metallized ceramic substrate comprises:

[0074] The patterned single-sided metallized ceramic substrate is cut according to a ratio of a preset width to a preset length of the original ceramic substrate.

[0075] The preset width is 0.2 mm, and the preset length ratio is 90% of the length of the original ceramic substrate.

[0076] It should be noted that the ceramic substrate obtained by cutting the patterned single-sided metallized ceramic substrate is similar to a "comb", so the cut ceramic substrate can also be called a "comb" ceramic substrate.

[0077] Preferably, the step of performing film forming treatment on the back side and the target side of the patterned single-sided metallized ceramic substrate comprises:

[0078] The back side and the target side of the patterned single-sided metallized ceramic substrate are subjected to film forming treatment by using a sputtering device.

[0079] Among them, the sputtering equipment is a magnetron sputtering equipment, and the film forming process forms a metal film layer.

[0080] It should be noted that by utilizing the diffraction characteristics of the magnetron sputtering equipment, the unmetallized side of the "comb" ceramic substrate is filmed according to the design requirements, which can achieve the purpose of simultaneous film formation on the back and side of the "comb" ceramic substrate and ensure the side metallization interconnection of the ceramic substrate.

[0081] Preferably, the step of heat treating and processing the three-sided metallized ceramic thin film substrate to obtain the electronic components with metallized interconnections on the sides includes:

[0082] The three-side metallized ceramic thin film substrate is heat-treated to obtain the three-side metallized ceramic thin film substrate after heat treatment.

[0083] The three-sided metallized ceramic thin film substrate after heat treatment is cut by a dicing machine, and sorting, special inspection and packaging and warehousing operations are carried out in sequence to obtain the electronic components with side metallization interconnection.

[0084] Specifically, a dicing machine is used to cut the three-sided metallized ceramic thin film substrate after heat treatment, unitize the product, and then go through sorting, special inspection and packaging and warehousing operations in sequence to obtain electronic components with side metallization interconnection.

[0085] Figure 2 The overall process flow chart is shown. To better illustrate the technical solution of the present invention, the following examples are used for illustration:

[0086] S10, after cleaning the ceramic substrate selected by the user, prepare a composite metal film layer according to the film system requirements designed by the user to obtain a single-sided metallized ceramic substrate (such as Figure 3 shown).

[0087] S20, entering the patterning process for the first time, using a photolithography machine and a mask to etch a target electrode pattern on a single-sided metallized ceramic substrate.

[0088] S30, entering the patterning process for the second time, using a photolithography machine and a mask to etch a target resistor pattern on the single-sided metallized ceramic substrate, to obtain a patterned single-sided metallized ceramic substrate (such as Figure 4 shown).

[0089] S40, using a dicing machine to cut the patterned single-sided metallized ceramic substrate, cutting along the side to be metallized, the cutting length is 90% of the length of the ceramic substrate, the cutting width is 0.2 mm, and a "comb"-like patterned ceramic substrate (such as Figure 5 shown).

[0090] S50, using a sputtering device to form a film on the non-metallized side of the "comb" patterned ceramic substrate according to the design requirements, and through the diffraction characteristics of the magnetron sputtering device, the purpose of simultaneous film formation on the back and side surfaces is achieved.

[0091] S60, after heat treatment of the ceramic thin film resistor substrate with metallization on three sides, use a dicing machine to cut the product into units, sort, inspect, package and store, and obtain ceramic thin film resistors with metallization interconnection on the side (such as Figure 6 shown).

[0092] The technical solution of this embodiment can improve the efficiency of preparing electronic components with side metallization interconnections, and is applicable to the preparation of electronic components of any size.

[0093] Figure 7 FIG. 2 is a schematic diagram showing a structure of an embodiment of a system 200 for preparing electronic components with side metallization interconnection provided by the present invention. Figure 7 As shown, the system 200 includes: a first processing module 210, a second processing module 220, a third processing module 230 and a preparation module 240;

[0094] The first processing module 210 is used to: perform single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate;

[0095] The second processing module 220 is used to: sequentially etch a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate;

[0096] The third processing module 230 is used to: cut the patterned single-sided metallized ceramic substrate along the target side surface of the patterned single-sided metallized ceramic substrate, and perform film forming processing on the back surface and the target side surface of the patterned single-sided metallized ceramic substrate to obtain a ceramic thin film substrate with three-sided metallization interconnection;

[0097] The preparation module 240 is used to: perform heat treatment and processing on the ceramic thin film substrate with metallization interconnection on three sides to obtain electronic components with metallization interconnection on side sides.

[0098] Preferably, the first processing module 210 is specifically used for:

[0099] The target composite metal layer is used to perform single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate.

[0100] Preferably, the second processing module 220 is specifically used for:

[0101] The target electrode pattern and the target resistor pattern are sequentially etched on the single-sided metallized ceramic substrate by using a photolithography machine and a mask plate to obtain the patterned single-sided metallized ceramic substrate.

[0102] Preferably, the third processing module 230 is specifically used for:

[0103] The patterned single-sided metallized ceramic substrate is cut along the target side of the patterned single-sided metallized ceramic substrate and in a target cutting manner using a dicing machine; wherein the target cutting manner is: cutting 90% of the length of the patterned single-sided metallized ceramic substrate to reserve an edge area of ​​the patterned single-sided metallized ceramic substrate.

[0104] Preferably, the third processing module 230 is specifically used for:

[0105] The patterned single-sided metallized ceramic substrate is cut according to a ratio of a preset width to a preset length of the original ceramic substrate.

[0106] Preferably, the third processing module 230 is specifically used for:

[0107] The back side and the target side of the patterned single-sided metallized ceramic substrate are subjected to film forming treatment by using a sputtering device.

[0108] Preferably, the preparation module 240 is specifically used for:

[0109] Heat-treating the ceramic thin film substrate with metallized interconnections on the side surfaces to obtain a three-sided metallized ceramic thin film substrate after heat treatment;

[0110] The three-sided metallized ceramic thin film substrate after heat treatment is cut into units by using a dicing machine, and then sorted, inspected and packaged for storage in sequence to obtain the electronic components with metallized interconnections on the side surfaces.

[0111] The technical solution of this embodiment can improve the efficiency of preparing electronic components with side metallization interconnections, and is applicable to the preparation of electronic components of any size.

[0112] The above parameters in the system 200 for preparing electronic components with side metallization interconnection and the steps for each module to implement corresponding functions can refer to the parameters and steps in the embodiment of the method for preparing electronic components with side metallization interconnection mentioned above, and will not be elaborated here.

[0113] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. Similarly, in order to simplify the present invention and help understand one or more of the various inventive aspects, in the above description of exemplary embodiments of the present invention, the various features of the embodiments of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. Wherein, the claims that follow the specific embodiment are hereby expressly incorporated into the specific embodiment, wherein each claim itself is a separate embodiment of the present invention.

[0114] It should be noted that the above embodiments illustrate the present invention rather than limit it, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets shall not be construed as a limitation on the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "one" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present invention may be implemented by means of hardware comprising a number of different elements and by means of a suitably programmed computer. In a unit claim enumerating a number of devices, several of these devices may be embodied by the same hardware item. The use of the words first, second, and third, etc. does not indicate any order. These words may be interpreted as names. The steps in the above embodiments, unless otherwise specified, should not be understood as limitations on the order of execution.

Claims

1. A method for preparing an electronic component with side metallization interconnection, characterized in that: include: Performing single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate; Sequentially etching a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate; The patterned single-sided metallized ceramic substrate is cut along the target side of the patterned single-sided metallized ceramic substrate, and the back side and the target side of the patterned single-sided metallized ceramic substrate are subjected to film forming treatment to obtain a ceramic thin film substrate with three-sided metallization interconnection; wherein the target side is at the edge of the single-sided metallized ceramic substrate; Heat treating and processing the ceramic thin film substrate with metallization interconnection on three sides to obtain electronic components with metallization interconnection on side sides; The step of cutting the patterned single-sided metallized ceramic substrate along the target side surface of the patterned single-sided metallized ceramic substrate comprises: Using a dicing machine, cutting the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate and in a target cutting manner; wherein the target cutting manner is used to reserve an edge area of ​​the patterned single-sided metallized ceramic substrate; The step of cutting the patterned single-sided metallized ceramic substrate comprises: The patterned single-sided metallized ceramic substrate is cut into a comb shape according to a preset width and a preset length ratio of the original ceramic substrate; wherein the preset width is 0.2 mm, and the preset length ratio is 90% of the length of the original ceramic substrate; the ceramic substrate after cutting the patterned single-sided metallized ceramic substrate is a comb-shaped ceramic substrate.

2. The method for preparing an electronic component with side metallization interconnection according to claim 1, characterized in that: The step of performing single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate comprises: The target composite metal layer is used to perform single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate.

3. The method for preparing an electronic component with side metallization interconnection according to claim 1, characterized in that: The step of sequentially etching a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate comprises: The target electrode pattern and the target resistor pattern are sequentially etched on the single-sided metallized ceramic substrate by using a photolithography machine and a mask plate to obtain the patterned single-sided metallized ceramic substrate.

4. The method for preparing an electronic component with side metallization interconnection according to claim 1, characterized in that: The step of performing film forming treatment on the back side and the target side of the patterned single-sided metallized ceramic substrate comprises: The back side and the target side of the patterned single-sided metallized ceramic substrate are subjected to film forming treatment by using a sputtering device.

5. The method for preparing electronic components with side metallization interconnection according to claim 1, characterized in that: The step of heat treating and processing the ceramic thin film substrate with metallization interconnection on three sides to obtain electronic components with metallization interconnection on the side sides comprises: Heat-treating the ceramic thin film substrate with metallized interconnections on the side surfaces to obtain a three-sided metallized ceramic thin film substrate after heat treatment; The three-sided metallized ceramic thin film substrate after heat treatment is cut into units by using a dicing machine, and then sorted, inspected and packaged for storage in sequence to obtain the electronic components with metallized interconnections on the side surfaces.

6. A system for preparing electronic components with side metallization interconnection, characterized in that: include: a first processing module, a second processing module, a third processing module and a preparation module; The first processing module is used to: perform single-sided metallization processing on the cleaned original ceramic substrate to obtain a single-sided metallized ceramic substrate; The second processing module is used to: sequentially etch a target electrode pattern and a target resistor pattern on the single-sided metallized ceramic substrate to obtain a patterned single-sided metallized ceramic substrate; The third processing module is used to: cut the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate, and perform film forming processing on the back side and the target side of the patterned single-sided metallized ceramic substrate to obtain a ceramic thin film substrate with three-sided metallization interconnection; wherein the target side is at the edge of the single-sided metallized ceramic substrate; The preparation module is used to: heat treat and process the three-sided metallized ceramic thin film substrate to obtain electronic components with metallized interconnections on the side surfaces; The third processing module is specifically used for: Using a dicing machine, cutting the patterned single-sided metallized ceramic substrate along the target side of the patterned single-sided metallized ceramic substrate and in a target cutting manner; wherein the target cutting manner is used to reserve an edge area of ​​the patterned single-sided metallized ceramic substrate; The third processing module is specifically used for: The patterned single-sided metallized ceramic substrate is cut into a comb shape according to a preset width and a preset length ratio of the original ceramic substrate; wherein the preset width is 0.2 mm, and the preset length ratio is 90% of the length of the original ceramic substrate; the ceramic substrate after cutting the patterned single-sided metallized ceramic substrate is a comb-shaped ceramic substrate.

7. The electronic component manufacturing system with side metallization interconnection according to claim 6, characterized in that: The first processing module is specifically used for: The target composite metal layer is used to perform single-sided metallization processing on the cleaned original ceramic substrate to obtain the single-sided metallized ceramic substrate.

8. The electronic component manufacturing system with side metallization interconnection according to claim 7, characterized in that: The second processing module is specifically used for: The target electrode pattern and the target resistor pattern are sequentially etched on the single-sided metallized ceramic substrate by using a photolithography machine and a mask plate to obtain the patterned single-sided metallized ceramic substrate.

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