A hemispherical resonator ion beam trimming tool setting device and method based on a white light interferometer and a machine tool probe

Abstract

The application provides a hemispherical resonator ion beam trimming tool setting device and method based on a white light interferometer and a machine tool probe, and belongs to the technical field of ultra-precision trimming machining. In order to solve the problem that the traditional ion beam positioning method cannot realize the accurate removal of nanogram-level mass at a given position of a hemispherical resonator, and the positioning accuracy of the ion beam relative to the hemispherical resonator is low. In the ultra-precision trimming process of the hemispherical resonator, the white light interferometer and the machine tool probe can realize the accurate correspondence between the ion beam trimming position and the theoretically calculated mass imbalance position; to a certain extent, the influence of human subjective factors on the ultra-precision trimming of the hemispherical resonator is avoided, the labor cost is reduced, the mass consistency of the hemispherical resonator is realized, and the tool setting process of the hemispherical structure which cannot be realized by the traditional ion beam is realized.

Description

Technical Field

[0001] This invention relates to the field of ultra-precision trimming and machining technology, and more specifically, to a hemispherical harmonic oscillator ion beam trimming and tool setting device and method based on a white light interferometer and a machine tool probe. Background Technology

[0002] The hemispherical resonator gyroscope (HRG) is a promising Coriolis gyroscope characterized by high precision, small size, low mass, simple structure, stable operation, and high reliability. The HRG mainly consists of an excitation shield, a hemispherical resonator, and a readout base. The hemispherical resonator is a thin-shell hemispherical part with high hardness and brittleness, making it difficult to ensure good mass uniformity during processing, leading to frequency fragmentation. Its quality factor is also constrained by various factors. Therefore, ion beam trimming technology can be used to adjust the unbalanced mass of the ultra-precision polished hemispherical resonator. Ion beam trimming technology has very high volume removal accuracy, reaching sub-nanometer levels. Compared to other trimming technologies, ion beam processing is pollution-free and non-contact, thus avoiding mechanical damage and environmental pollution during the process. Because the hemispherical resonator is a thin-shell hemispherical part, it cannot be positioned using traditional ion beam positioning methods. This is because traditional ion beam positioning methods can only perform planar tool setting, and there is no tool setting structure or method for hemispherical resonators. The adjustment amount of sub-millihertz frequency splitting of the hemispherical resonator needs to ensure that the ion beam can accurately remove nanogram-level mass at a predetermined position of the hemispherical resonator. This places high demands on the positioning accuracy of the ion beam relative to the hemispherical resonator. Therefore, it is urgent to propose a tool setting method that can quantify the relative positional accuracy of the ion beam and the hemispherical resonator. Summary of the Invention

[0003] The technical problem to be solved by this invention is:

[0004] To address the problem that traditional ion beam positioning methods cannot accurately remove nanogram-level masses at a predetermined location on a hemispherical harmonic oscillator, resulting in low positioning accuracy of the ion beam relative to the hemispherical harmonic oscillator.

[0005] The technical solution adopted by the present invention to solve the above-mentioned technical problems is as follows:

[0006] This invention provides a hemispherical resonator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe, including an X-axis linear motion platform, a Y-axis linear motion platform, a Z-axis linear motion platform, an ion source, a precision rotary table, a pitch stage, and a three-dimensional adjustment stage.

[0007] The ion source is mounted on the Z-axis linear motion platform via a mounting arm. The ion beam emission direction of the ion source is perpendicular to the Z-axis and can move along the Z-axis. An aperture, a white light interferometer, and a machine tool probe can be mounted on the ion source. The center of the ion beam of the ion source coincides with the aperture, the white light interferometer, and the machine tool probe, respectively. The Z-axis linear motion platform is used to coarsely adjust the position of the hemispherical harmonic oscillator in the Z-axis direction.

[0008] The X-axis linear motion platform is mounted on the Y-axis linear motion platform in a cross-stack configuration. The X-axis linear motion platform includes a precision turntable, which in turn includes a pitch stage. The pitch stage includes a three-dimensional adjustment stage for mounting a hemispherical resonator. The three-dimensional adjustment stage includes an arc-shaped slide rail. The hemispherical resonator's position along the X, Y, and Z axes can be finely adjusted via the three-dimensional adjustment stage. The precision turntable adjusts the rotation angle of the hemispherical resonator, aligning the axis of the hemispherical resonator's support rod with the rotation axis of the precision turntable in conjunction with a white light interferometer. The pitch stage adjusts the pitch angle of the hemispherical resonator, aligning the center of the hemispherical resonator with the pitch axis of the pitch stage in conjunction with the white light interferometer. The X-axis and Y-axis linear motion platforms are used for coarse adjustment of the hemispherical resonator's position along the X and Y axes, respectively.

[0009] Furthermore, the aperture is a concentric ring-shaped thin sheet structure, and the ion source is connected to the aperture through a mounting head, with the central hole of the aperture coinciding with the center of the ion beam of the ion source.

[0010] Furthermore, the aperture can be a graphite aperture or a molybdenum aperture.

[0011] Furthermore, the mounting head of the ion source is connected to the center plate of the white light interferometer, and the center hole of the white light interferometer is precisely clamped to the white light interferometer via a hole shaft. The measuring light of the probe of the white light interferometer coincides with the center of the ion beam of the ion source.

[0012] Furthermore, the white light interferometer has a resolution of <30 pm, a linearity of <±10 nm, and a maximum tilt angle of ±2°.

[0013] Furthermore, the mounting head of the ion source is connected to the centering plate of the machine tool probe, and the center hole of the centering plate of the machine tool probe is precisely clamped to the machine tool probe through a hole shaft. The probe axis of the machine tool probe coincides with the center of the ion beam of the ion source.

[0014] Furthermore, the repeatability of the machine tool probe is 2σ < 0.5 μm, and the five-axis detection directions are ±X-axis, ±Y-axis and +Z-axis.

[0015] Furthermore, when the working surface of the pitch stage is in a horizontal position, it is at a 0° position, and when the working surface of the pitch stage is pitched, the direction in which the top of the outer support rod approaches the white light interferometer is the positive direction.

[0016] A tool setting method based on a hemispherical harmonic oscillator ion beam adjustment tool setting device using a white light interferometer and a machine tool probe includes the following steps:

[0017] S1. Adjustment of the axis of the hemispherical resonator support rod: Install the hemispherical resonator on the three-dimensional adjustment stage, and install the white light interferometer on the ion source through the white light interferometer alignment plate. The measuring light of the white light interferometer probe needs to illuminate the outer support rod of the hemispherical resonator and be at a suitable measuring distance. By adjusting the rotation angle of the precision turntable and the X / Y axis displacement of the three-dimensional adjustment stage, the measurement values ​​of the four measuring points of the white light interferometer on the outer support rod of the hemispherical resonator are equal, so as to ensure that the axis of the hemispherical resonator support rod coincides with the rotation axis of the precision turntable.

[0018] S2. Adjustment of the center of the hemispherical harmonic oscillator: By adjusting the X-axis linear motion platform, Y-axis linear motion platform, and Z-axis linear motion platform, the measuring light from the probe of the white light interferometer is made to illuminate the lip of the outer spherical surface of the hemispherical harmonic oscillator at a suitable measuring distance. By adjusting the pitch angle of the pitch stage and the Z-axis displacement of the three-dimensional adjustment stage, the measuring values ​​of the three measuring points on the outer spherical surface of the hemispherical harmonic oscillator by the white light interferometer are made equal, so as to ensure that the center of the hemispherical harmonic oscillator coincides with the pitch axis of the pitch stage.

[0019] S3. During the tool setting process, obtain the Y-axis coordinates. Remove the white light interferometer centering plate from the ion source. Install the machine tool probe on the ion source through the machine tool probe centering plate. Adjust the X-axis linear motion platform, Y-axis linear motion platform, and Z-axis linear motion platform, keeping the X-axis linear motion platform fixed. Make the machine tool probe approach the hemispherical resonator from the positive and negative directions of the Y-axis at the same Z-axis height. Contact the two ends of the outer spherical surface of the hemispherical resonator through the ruby ​​probe on the machine tool probe. When the ruby ​​probe touches the hemispherical resonator and moves axially under the action of external force, the triggering mechanism generates a trigger signal. The receiver transmits the signal to the computer and records the Y-axis coordinates of the two contact positions at this time. Add the two Y-axis coordinates and take the average value. The Y-axis coordinate y0 at this time is the position where the center of the ion source intersects the hemispherical resonator support rod perpendicularly.

[0020] S4. During the tool setting process, the Z-axis coordinate is obtained. After the Y-axis position is determined in step S3, the ruby ​​probe of the machine tool is moved from the negative Z-axis to the positive Z-axis below the end face of the hemispherical resonator and axially moved by the external force. At this time, the ruby ​​probe contacts the end face of the hemispherical resonator, the triggering mechanism generates a trigger signal, the receiver transmits the signal to the computer, and records the Z-axis coordinate of the contact position at this time. The Z-axis coordinate z0 obtained by adding the radius of the ruby ​​probe to the Z-axis coordinate of the contact position at this time is the position where the center of the ion source intersects the end face of the hemispherical resonator.

[0021] S5. After tool setting, adjust the position of the aperture before trimming. Remove the machine tool probe centering plate from the ion source and install the aperture. It has been proven that the ion beam material removal function is not sensitive to the target distance. Adjust the X-axis linear motion platform and determine the relative position of the aperture and the end face of the hemispherical resonator by using a 10mm gauge block. At this time, the X-axis coordinate x0 is the relative position of the ion source aperture and the hemispherical resonator in the processing state.

[0022] S6. After tool setting, adjust the X-axis linear motion platform, Y-axis linear motion platform, and Z-axis linear motion platform. Identify the location of the mass non-uniformity point using the measurement data of the laser vibration meter. Adjust the rotation angle and speed of the precision turntable to achieve circumferential adjustment of the mass non-uniformity of the hemispherical harmonic oscillator. Adjust the pitch angle of the pitch stage to achieve axial adjustment of the mass non-uniformity of the hemispherical harmonic oscillator.

[0023] Further, in step S1, the rotation angles of the precision turntable are 0°, 90°, 180° and 270° respectively; in step S2, the pitch angles of the working surface of the pitch stage are 0°, 30° and 60° respectively.

[0024] Compared with the prior art, the beneficial effects of the present invention are:

[0025] This invention discloses a hemispherical resonator ion beam adjustment and tool setting device and method based on a white light interferometer and a machine tool probe. It converts the inaccurate positioning of the ion beam into a positionable position using a white light interferometer and a machine tool probe. The white light interferometer is used for distance measurement. An SLED in the controller generates white light, which is transmitted through an optical fiber to a beam splitter, splitting into reference light and measurement light. The reference light is reflected after illuminating a reference surface, and the measurement light is reflected after illuminating the surface of the hemispherical resonator. The light reflected from the reference surface and the hemispherical resonator is received by a sensor and transmitted to the controller. The distance between the surface of the hemispherical resonator and the measurement origin is calculated using the principle of interferometry. The machine tool probe has an internal triggering mechanism. When the probe touches the hemispherical resonator and is subjected to external force causing radial or axial movement, the triggering mechanism generates a trigger signal. The receiver transmits the signal to a computer to obtain the coordinates of each axis. Based on the data from different measurement points, the relative position of the ion beam source and the hemispherical resonator is calculated, thus completing the tool setting operation for hemispherical resonator ion beam adjustment.

[0026] This invention discloses an ion beam trimming and tool setting device and method for hemispherical harmonic oscillators based on a white light interferometer and a machine tool probe. During the ultra-precision trimming of the hemispherical harmonic oscillator, the white light interferometer and machine tool probe enable precise alignment between the ion beam trimming position and the theoretically calculated mass imbalance position. This avoids, to a certain extent, the influence of human subjective factors on the ultra-precision trimming of the hemispherical harmonic oscillator, while reducing labor costs and achieving consistent hemispherical harmonic oscillator quality. It also enables tool setting processes for hemispherical structures that are impossible with traditional ion beams. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the hemispherical harmonic oscillator ion beam trimming and tool setting device based on a white light interferometer in an embodiment of the present invention;

[0028] Figure 2 This is a schematic diagram of the hemispherical resonator ion beam trimming and tool setting device based on a machine tool probe in an embodiment of the present invention. Figure 2 ;

[0029] Figure 3 This is a schematic diagram of the structure during the adjustment of the hemispherical harmonic oscillator ion beam in an embodiment of the present invention.

[0030] Explanation of reference numerals in the attached figures:

[0031] 1. X-axis linear motion platform; 2. Y-axis linear motion platform; 3. Z-axis linear motion platform; 4. Ion source; 5. Mounting arm; 6. Precision turntable; 7. Pitch stage; 8. 3D adjustment stage; 9. White light interferometer alignment plate; 10. White light interferometer; 11. Machine tool probe; 12. Machine tool probe alignment plate; 13. Aperture; 14. Hemispherical harmonic oscillator. Detailed Implementation

[0032] In the description of this invention, it should be noted that the terms used in the various embodiments, such as "upper," "lower," "front," "rear," "left," and "right," which indicate orientation, are only used to simplify the description of the positional relationships based on the accompanying drawings and do not mean that the components and devices referred to must be operated in accordance with the specific orientations and defined operations, methods, and structures in the specification. Such directional terms do not constitute a limitation of this invention.

[0033] In the description of this invention, it should be noted that the terms "first," "second," and "third" mentioned in the embodiments of this invention are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," and "third" may explicitly or implicitly include one or more of that feature.

[0034] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0035] Specific Implementation Plan 1: Combining Figures 1 to 3 As shown, this invention provides a hemispherical resonator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe, including an X-axis linear motion platform 1, a Y-axis linear motion platform 2, a Z-axis linear motion platform 3, an ion source 4, a precision rotary table 6, a pitch stage 7, and a three-dimensional adjustment stage 8.

[0036] The ion source 4 is mounted on the Z-axis linear motion platform 3 via the mounting arm 5. The ion beam emission direction of the ion source 4 is perpendicular to the Z-axis and can move along the Z-axis. The ion source 4 can be used to mount the aperture 13, the white light interferometer 10, and the machine tool probe 11. The center of the ion beam of the ion source 4 coincides with the aperture 13, the white light interferometer 10, and the machine tool probe 11, respectively. The Z-axis linear motion platform 3 is used to coarsely adjust the position of the hemispherical harmonic oscillator 14 in the Z-axis direction.

[0037] The X-axis linear motion platform 1 is mounted on the Y-axis linear motion platform 2 in a cross-stack configuration. The X-axis linear motion platform 1 has a precision turntable 6, which in turn has a pitch stage 7. The pitch stage 7 has a three-dimensional adjustment stage 8, on which a hemispherical resonator 14 is mounted. The three-dimensional adjustment stage 8 includes an arc-shaped slide rail. The position of the hemispherical resonator 14 along the X, Y, and Z axes can be finely adjusted via the three-dimensional adjustment stage 8. The precision turntable 6 is used to adjust the rotation angle of the hemispherical resonator 14, cooperating with the white light interferometer 10 to align the axis of the support rod of the hemispherical resonator 14 with the rotation axis of the precision turntable 6. The pitch stage 7 is used to adjust the pitch angle of the hemispherical resonator 14, cooperating with the white light interferometer 10 to align the center of the hemispherical resonator 14 with the pitch axis of the pitch stage 7. The X-axis linear motion platform 1 and the Y-axis linear motion platform 2 are used for coarse adjustment of the position of the hemispherical resonator 14 along the X and Y axes, respectively.

[0038] It should be noted that the X-axis linear motion platform 1, Y-axis linear motion platform 2, Z-axis linear motion platform 3, ion source 4, precision rotary table 6, pitch stage 7, and three-dimensional adjustment stage 8 are all existing devices. Therefore, the specific structure of the above devices is not described in detail in this invention. The white light interferometer is the Micro-Epsilon IMP-DS19 distance sensor, the machine tool probe 11 can be the PL20 wired machine tool probe from Shenzhen Zhongtu Instrument Co., Ltd., the linear stage, rotary table, and pitch stage are products of PI Corporation, and the three-dimensional adjustment stage is the Sigma TSD-405C.

[0039] Preferably, the aperture 13 is a concentric annular thin sheet structure. The ion source 4 is connected to the aperture 13 via a mounting head. The central hole of the aperture 13 coincides with the center of the ion beam of the ion source 4. The alignment of the central hole of the aperture 13 with the center of the ion beam of the ion source 4 is adjusted by the assembly precision; that is, the higher the assembly precision, the higher the degree of coincidence between the central hole of the aperture 13 and the center of the ion beam of the ion source 4. The aperture 13 can be a graphite aperture or a molybdenum aperture. The coaxiality of the central hole of the aperture 13 relative to the outer ring is 0.01 mm.

[0040] Preferably, the mounting head of the ion source 4 is connected to the center plate 9 of the white light interferometer. The center hole of the white light interferometer center plate 9 is precisely clamped to the white light interferometer 10 through a hole shaft. Similarly, the assembly precision ensures that the measuring light of the probe of the white light interferometer 10 coincides with the center of the ion beam of the ion source 4. The white light interferometer 10 is used for distance measurement. The resolution of the white light interferometer 10 is <30pm, the linearity is <±10nm, and the maximum tilt angle is ±2°.

[0041] Preferably, the mounting head of the ion source 4 is connected to the machine tool probe alignment plate 12, and the center hole of the machine tool probe alignment plate 12 is precisely clamped to the machine tool probe 11 through a hole shaft. Similarly, the assembly precision ensures that the probe axis of the machine tool probe 11 coincides with the center of the ion beam of the ion source 4. The repeatability of the machine tool probe 11 is 2σ < 0.5μm, and the five-axis detection directions are ±X-axis, ±Y-axis, and +Z-axis.

[0042] Preferably, when the working surface of the pitch stage 7 is in a horizontal position, it is at a 0° position, and when the working surface of the pitch stage 7 is pitched, the direction in which the top of the outer support rod of the hemispherical harmonic oscillator 14 is close to the white light interferometer 10 is the positive direction.

[0043] Specific Implementation Plan Two: Combining Figures 1 to 3 As shown, this invention provides a hemispherical harmonic oscillator ion beam adjustment and tool setting method based on a white light interferometer and a machine tool probe, comprising the following steps:

[0044] S1. Adjustment of the axis of the support rod of the hemispherical resonator 14: Install the hemispherical resonator 14 on the three-dimensional adjustment stage 8, and install the white light interferometer 10 on the ion source 4 through the white light interferometer alignment plate 9. The measuring light of the probe of the white light interferometer 10 needs to be irradiated on the outer support rod of the hemispherical resonator 14 and at a suitable measuring distance. Rotate the precision turntable 6 to 0°, 90°, 180° and 270° respectively. By adjusting the XY axis displacement of the three-dimensional adjustment stage 8, the measuring values ​​of the four measuring points of the white light interferometer 10 on the outer support rod of the hemispherical resonator 14 are equal, so as to ensure that the axis of the support rod of the hemispherical resonator 14 coincides with the rotation axis of the precision turntable 6.

[0045] The measurement distance refers to the distance between the measuring surface and the probe, which is approximately 20 mm, with a reading range within 2.1 mm. In other words, the appropriate measurement distance is the distance from the outer support rod of the hemispherical resonator to the white light interferometer, which is 20 to 22.1 mm.

[0046] S2. Adjustment of the center of the hemispherical resonator 14: By adjusting the X-axis linear motion platform 1, Y-axis linear motion platform 2, and Z-axis linear motion platform 3, the measuring light from the probe of the white light interferometer 10 is made to illuminate the lip of the outer spherical surface of the hemispherical resonator 14 at a suitable measuring distance. By adjusting the elevation platform 7, the working surface of the elevation platform 7 is tilted to 0°, 30°, and 60° respectively. By adjusting the Z-axis displacement of the three-dimensional adjustment platform 8, the measuring values ​​of the three measuring points on the outer spherical surface of the hemispherical resonator 14 by the white light interferometer 10 are made equal, so as to ensure that the center of the hemispherical resonator 14 coincides with the elevation axis of the elevation platform 7.

[0047] S3. During the tool setting process, obtain the Y-axis coordinates. Remove the white light interferometer centering plate 9 from the ion source 4. Install the machine tool probe 11 on the ion source 4 through the machine tool probe centering plate 12. Adjust the X-axis linear motion platform 1, Y-axis linear motion platform 2, and Z-axis linear motion platform 3 to keep the X-axis linear motion platform fixed. Make the machine tool probe 11 approach the hemispherical resonator 14 from the positive and negative directions of the Y-axis at the same Z-axis height. The ruby ​​probe on the machine tool probe 11 contacts the two ends of the outer spherical surface of the hemispherical resonator 14. When the ruby ​​probe touches the hemispherical resonator 14 and moves axially under the action of external force, the triggering mechanism generates a trigger signal. The receiver transmits the signal to the computer and records the Y-axis coordinates of the two contact positions at this time. Add the two Y-axis coordinates and take the average value. The Y-axis coordinate y0 at this time is the position where the center of the ion source 4 intersects the support rod of the hemispherical resonator 14 perpendicularly.

[0048] S4. During the tool setting process, the Z-axis coordinate is obtained. After the Y-axis position is determined in step S3, the ruby ​​probe of the machine tool probe 11 is moved from the negative Z-axis to the positive Z-axis below the end face of the hemispherical resonator 14 and is subjected to external force to generate axial movement. At this time, the ruby ​​probe contacts the end face of the hemispherical resonator 14, the trigger mechanism generates a trigger signal, the receiver transmits the signal to the computer, and records the Z-axis coordinate of the contact position at this time. The Z-axis coordinate z0 obtained by adding the radius of the ruby ​​probe to the Z-axis coordinate of the contact position at this time is the position where the center of the ion source 4 intersects the end face of the hemispherical resonator 14.

[0049] S5. Before tool setting, adjust the position of the aperture 13 before trimming. Remove the machine tool probe centering plate 12 from the ion source 4 and install the aperture 13. It has been proven that the ion beam material removal function is not sensitive to the target distance. Adjust the X-axis linear motion platform 1 and determine the relative position of the aperture 13 and the end face of the hemispherical resonator 14 by using a 10mm gauge block. The X-axis coordinate x0 at this time is the relative position of the ion source aperture 13 and the hemispherical resonator 14 in the processing state.

[0050] The reference demonstrating that the removal function of ion beam materials is insensitive to the target distance is Liao Wenlin. Fundamental Research on Ion Beam Shaping of Sub-nanometer Precision Optical Surfaces [D]. National University of Defense Technology, 2015, section 4.3.4.1, Influence of Target Distance on Removal Function;

[0051] The gauge block is positioned between the hemispherical resonator 14, the ion source 4, and the aperture 3. When the gauge block is about to contact the hemispherical resonator and the aperture, the distance between the hemispherical resonator and the aperture is 10mm.

[0052] S6. After tool setting, adjust the X-axis linear motion platform 1, Y-axis linear motion platform 2, and Z-axis linear motion platform 3 to (x0, y0, z0). Identify the location of the mass non-uniformity point using the measurement data of the laser vibrometer. Adjust the rotation angle and speed of the precision turntable 6 to achieve circumferential adjustment of the mass non-uniformity of the hemispherical harmonic oscillator 14. Adjust the pitch angle of the pitch platform 7 to achieve axial adjustment of the mass non-uniformity of the hemispherical harmonic oscillator 14.

[0053] The other combinations and connections in this implementation scheme are the same as in Specific Implementation Scheme 1.

[0054] While the present invention has been disclosed above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, and all such changes and modifications will fall within the scope of protection of the present invention.

Claims

1. A hemispherical harmonic oscillator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe, characterized in that: It includes an X-axis linear motion platform (1), a Y-axis linear motion platform (2), a Z-axis linear motion platform (3), an ion source (4), a precision turntable (6), a pitch stage (7), and a three-dimensional adjustment stage (8). The ion source (4) is mounted on the Z-axis linear motion platform (3) via the mounting arm (5). The ion beam emission direction of the ion source (4) is perpendicular to the Z-axis and can move along the Z-axis. The ion source (4) can be used to mount the aperture (13), the white light interferometer (10), and the machine tool probe (11). The center of the ion beam of the ion source (4) coincides with the aperture (13), the white light interferometer (10), and the machine tool probe (11), respectively. The Z-axis linear motion platform (3) is used to coarsely adjust the position of the hemispherical harmonic oscillator (14) in the Z-axis direction. The Y-axis linear motion platform (2) is mounted on the X-axis linear motion platform (1) in a cross-stack configuration. The Y-axis linear motion platform (2) is equipped with a precision turntable (6), which in turn is equipped with a pitch stage (7). The pitch stage (7) is equipped with a three-dimensional adjustment stage (8). The three-dimensional adjustment stage (8) is used to mount a hemispherical resonator (14). The three-dimensional adjustment stage (8) includes an arc-shaped slide rail. The position of the hemispherical resonator (14) along the X-axis, Y-axis, and Z-axis can be finely adjusted via the three-dimensional adjustment stage (8). The precision turntable (6) is used to adjust the rotation angle of the hemispherical resonator (14) and to work with the white light interferometer (10) to make the axis of the support rod of the hemispherical resonator (14) coincide with the axis of rotation of the precision turntable (6); the pitch stage (7) is used to adjust the pitch angle of the hemispherical resonator (14) and to work with the white light interferometer (10) to make the center of the hemispherical resonator (14) coincide with the pitch axis of the pitch stage (7); the X-axis linear motion platform (1) and the Y-axis linear motion platform (2) are used to coarsely adjust the position of the hemispherical resonator (14) along the X-axis and Y-axis directions, respectively. The aperture (13) is a concentric ring-shaped thin sheet structure. The ion source (4) is connected to the aperture (13) through the mounting head. The central hole of the aperture (13) coincides with the center of the ion beam of the ion source (4). The mounting head of the ion source (4) is connected to the center plate (9) of the white light interferometer. The center hole of the white light interferometer center plate (9) is precisely clamped to the white light interferometer (10) through the hole shaft. The measuring light of the probe of the white light interferometer (10) coincides with the center of the ion beam of the ion source (4). The mounting head of the ion source (4) is connected to the machine tool probe alignment plate (12). The center hole of the machine tool probe alignment plate (12) is precisely clamped to the machine tool probe (11) through the hole shaft. The probe axis of the machine tool probe (11) coincides with the center of the ion beam of the ion source (4).

2. The hemispherical harmonic oscillator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe according to claim 1, characterized in that: The aperture (13) can be a graphite aperture or a molybdenum aperture.

3. The hemispherical harmonic oscillator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe according to claim 1, characterized in that: The white light interferometer (10) has a resolution of <30 pm, linearity of <±10 nm, and a maximum tilt angle of ±2°.

4. The hemispherical harmonic oscillator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe according to claim 1, characterized in that: The repeatability of the machine tool probe (11) is 2σ < 0.5μm, and the five-axis detection directions are ±X-axis, ±Y-axis and +Z-axis.

5. The hemispherical harmonic oscillator ion beam trimming and tool setting device based on a white light interferometer and a machine tool probe according to claim 1, characterized in that: When the working surface of the pitch stage (7) is in a horizontal position, it is at the 0° position. When the working surface of the pitch stage (7) is pitched, the direction in which the top of the outer support rod is close to the white light interferometer (10) is the positive direction.

6. A tool setting method for a hemispherical harmonic oscillator ion beam adjustment tool setting device based on a white light interferometer and a machine tool probe according to any one of claims 1-5, characterized in that, Includes the following steps: S1. Adjustment of the axis of the support rod of the hemispherical resonator (14): Install the hemispherical resonator (14) on the three-dimensional adjustment stage (8), and install the white light interferometer (10) on the ion source (4) through the white light interferometer core plate (9). The measuring light of the probe of the white light interferometer (10) needs to be irradiated on the outer support rod of the hemispherical resonator (14) and at a suitable measuring distance. By adjusting the rotation angle of the precision turntable (6) and the X / Y axis displacement of the three-dimensional adjustment stage (8), the measurement values ​​of the four measuring points of the white light interferometer (10) on the outer support rod of the hemispherical resonator (14) are equal, so as to ensure that the axis of the support rod of the hemispherical resonator (14) coincides with the rotation axis of the precision turntable (6). S2. Adjustment of the center of the hemispherical harmonic oscillator (14): By adjusting the X-axis linear motion platform (1), Y-axis linear motion platform (2) and Z-axis linear motion platform (3), the measuring light of the probe of the white light interferometer (10) is irradiated on the lip of the outer spherical surface of the hemispherical harmonic oscillator (14) and at a suitable measuring distance. By adjusting the pitch angle of the pitch stage (7) and the Z-axis displacement of the three-dimensional adjustment stage (8), the three measuring points of the white light interferometer (10) on the outer spherical surface of the hemispherical harmonic oscillator (14) are equal, so as to ensure that the center of the hemispherical harmonic oscillator (14) coincides with the pitch axis of the pitch stage (7). S3. During the tool setting process, obtain the Y-axis coordinates, remove the white light interferometer centering plate (9) from the ion source (4), and install the machine tool probe (11) on the ion source (4) through the machine tool probe centering plate (12). Adjust the X-axis linear motion platform (1), Y-axis linear motion platform (2), and Z-axis linear motion platform (3) to achieve the desired results. The X-axis linear motion platform (3) keeps the X-axis linear motion platform (1) fixed and makes the machine tool probe (11) approach the hemispherical resonator (14) from the positive and negative directions of the Y-axis at the same Z-axis height. The ruby ​​probe on the machine tool probe (11) contacts the two ends of the outer spherical surface of the hemispherical resonator (14). When the ruby ​​probe touches the hemispherical resonator (14) and is subjected to external force to move axially, the triggering mechanism generates a trigger signal. The receiver transmits the signal to the computer and records the Y-axis coordinates of the two contact positions at this time. The two Y-axis coordinates are added together and the average value is taken. The Y-axis coordinate y0 at this time is the position where the center of the ion source (4) intersects the support rod of the hemispherical resonator (14) perpendicularly. S4. During the tool setting process, the Z-axis coordinate is obtained. After the Y-axis position determined in step S3, the ruby ​​probe of the machine tool probe (11) is moved from the negative Z-axis to the positive Z-axis below the end face of the hemispherical resonator (14) and is subjected to external force to generate axial movement. At this time, the ruby ​​probe contacts the end face of the hemispherical resonator (14), the trigger mechanism generates a trigger signal, the receiver transmits the signal to the computer, and records the Z-axis coordinate of the contact position at this time. The Z-axis coordinate z0 obtained by adding the radius of the ruby ​​probe to the Z-axis coordinate of the contact position at this time is the position where the center of the ion source (4) intersects the end face of the hemispherical resonator (14). S5. Adjust the position of the aperture (13) before tool setting and trimming. Remove the machine tool probe centering plate (12) from the ion source (4) and install the aperture (13). It has been proven that the ion beam material removal function is not sensitive to the target distance. Adjust the X-axis linear motion platform (1) and determine the relative position of the aperture (13) and the end face of the hemispherical resonator (14) by using a 10mm gauge block. The X-axis coordinate x0 at this time is the relative position of the aperture (13) and the hemispherical resonator (14) of the ion source (4) in the processing state. S6. After tool setting, adjust the X-axis linear motion platform (1), Y-axis linear motion platform (2) and Z-axis linear motion platform (3) to (x0, y0, z0). Identify the position of the mass non-uniformity point by the measurement data of the laser vibration meter. Adjust the rotation angle and speed of the precision turntable (6) to achieve circumferential adjustment of the mass non-uniformity of the hemispherical harmonic oscillator (14). Adjust the pitch angle of the pitch platform (7) to achieve axial adjustment of the mass non-uniformity of the hemispherical harmonic oscillator (14).

7. The tool setting method according to claim 6, characterized in that: In step S1, the rotation angles of the precision turntable (6) are 0°, 90°, 180° and 270° respectively; in step S2, the pitch angles of the working surface of the pitch table (7) are 0°, 30° and 60° respectively.

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