A system and method for measuring dislocations of silicon wafer oxide layers using X-ray diffraction

Abstract

This invention relates to the field of materials science and technology, specifically to an X-ray diffraction measurement system for silicon wafer oxide layers. The system includes a detector body for measuring dislocations in the silicon wafer oxide layer, a support stage fixed to the front of the detector body, and a support box for carrying the silicon wafer material. It also includes a transfer mechanism located on top of the support stage and a transmission component located on the left side of the top of the support stage for transporting the support box containing the silicon wafer material. This invention improves transmission stability by using magnetic attraction to limit the position of the support box carrying the silicon wafer material during transmission. It also facilitates the limiting of support boxes of different sizes, thereby facilitating the transmission of silicon wafer materials of different sizes and enabling the detection of silicon wafer materials of different specifications. Furthermore, the cooperation between the transmission component and the transfer mechanism facilitates the transmission of support boxes of different specifications, making it convenient for practical use.

Description

Technical Field

[0001] This invention relates to the field of materials science and technology, specifically to an X-ray diffraction measurement system and detection method for silicon wafer oxide layers. Background Technology

[0002] In materials science, dislocations are a crucial factor affecting material properties. The type and distribution of dislocations directly influence a material's strength, plasticity, and toughness. X-ray diffraction (XRD) for dislocation detection works on the principle of X-ray diffraction. When X-rays irradiate a sample, scattering occurs. The angle and intensity of scattering are related to the sample's crystal structure and interatomic spacing. In the presence of dislocations, the interatomic spacing changes, leading to abnormal diffraction peaks or peak shifts in the diffraction pattern. By analyzing and processing these anomalies, the type and distribution of dislocations can be determined.

[0003] Existing X-ray diffraction detectors typically use a dedicated external conveying device to transport a carrier box containing the test material into the detector, thereby achieving automated detection and improving efficiency. However, existing X-ray diffraction detectors usually use a clamping method to transfer the carrier box into the detector body. This clamping method is inefficient when transporting carrier boxes of different sizes, requiring larger clamping devices for larger boxes, occupying significant space and proving inconvenient for practical use. To address these issues, a system and method for measuring dislocations in silicon wafer oxide layers using X-ray diffraction are proposed. Summary of the Invention

[0004] The purpose of this invention is to provide an X-ray diffraction measurement system and detection method for silicon wafer oxide layers. In order to overcome the shortcomings of the prior art, this invention provides an X-ray diffraction measurement system and detection method for silicon wafer oxide layers, which can meet the outdoor use requirements of the mounting plate while ensuring that the size of the mounting plate can be adjusted according to the actual use situation, and does not require the laying of power cords, thus achieving better performance.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution: an X-ray diffraction measurement dislocation system for silicon wafer oxide layer, comprising a detector body for measuring dislocations in silicon wafer oxide layer, a support stage fixedly disposed on the front of the detector body, and a support box for carrying silicon wafer material, wherein a mechanical claw is disposed inside the detector body on the side near the support stage, and further comprising a transfer mechanism disposed on the top of the support stage and a transmission component disposed on the left side of the top of the support stage for conveying the support box containing silicon wafer material;

[0006] The transfer mechanism includes a support platform sleeved on the top of the carrier platform, a magnetic suction component set on the top of the carrier platform for limiting the carrier box, and an adjustment component set at the center of the top of the carrier platform to assist the magnetic suction component in magnetically limiting the carrier box.

[0007] Furthermore, the magnetic suction assembly includes a first mounting base fixedly disposed on the top of the support platform and arranged in a circular array, an electromagnet fixedly disposed in the first mounting base, a conductor post fixedly connected to the electromagnet and extending to the bottom of the support platform, and a magnetic metal plate fixedly disposed on the bottom of the carrier box. The top of each first mounting base is fixedly provided with a cover plate, the top of the cover plate being horizontal with the top of the support platform. The top of the support platform is provided with mounting grooves for mounting the first mounting bases in a circular array.

[0008] The magnetic attraction assembly also includes a second mounting base disposed at the bottom of the support platform, a conductor base fixedly disposed within the second mounting base, and a mounting hole. The top of the conductor base is concave, and the sidewall of the conductor post is fitted inside the conductor base.

[0009] Furthermore, the adjustment assembly includes a threaded rod rotatably connected to the top center of the support platform and extending to the bottom of the second mounting base, and a baffle threadedly connected to the side wall of one end of the threaded rod located at the bottom of the second mounting base. A first spring is sleeved on the top of the baffle and on the side wall of the threaded rod. A through hole for sleeved threaded rod is opened on the top of the second mounting base. A groove is opened at the top center of the support platform. One end of the threaded rod located on the top of the support platform is located in the groove. A sealing plate is sleeved on the inner side wall of the mounting groove. Insertion holes arranged in a ring array are opened at the top edge of the sealing plate.

[0010] Furthermore, the adjustment assembly also includes a fixed plate fixedly disposed on the inner wall of the bottom of the groove and mirror-symmetrical about the center point of the groove, and a pawl hinged to the fixed plate. A ratchet that meshes with the pawl is fixedly sleeved on the side wall of one end of the threaded rod located in the groove. A second spring that is fixedly connected to the fixed plate is fixedly disposed on the inner side of the pawl.

[0011] Furthermore, the transfer mechanism also includes a drive assembly disposed inside the carrier platform for driving the support platform to rotate. The drive assembly cooperates with the transmission assembly and the mechanical gripper to transport the carrier box containing silicon wafer material into the detector body.

[0012] The drive assembly includes a support rod fixedly mounted on the bottom of the support platform and arranged in a circular array, a connecting plate fixedly mounted on the bottom of the support rod, and a servo motor fixedly mounted inside the support platform. A rotating shaft is fixedly mounted on the bottom of the connecting plate, and a worm gear is fixedly mounted on the side wall of the rotating shaft. A worm gear is engaged with the side wall of the worm gear and is rotatably connected to the support platform. One end of the worm gear is fixedly connected to the output shaft of the servo motor through a coupling.

[0013] Furthermore, the mounting hole is located at the center of the bottom of the rotating shaft and extends into the second mounting base.

[0014] Furthermore, the transmission assembly includes a mounting frame disposed on the top left side of the support platform and a conveyor fixedly disposed within the mounting frame. Cylinders extending to the inside of the mounting frame are fixedly disposed on both outer sides of the mounting frame and on top of the conveyor. A limiting plate is fixedly disposed on the output shaft of the cylinder, and the bottom of the limiting plate is located on the top of the conveyor.

[0015] Furthermore, it also includes a detection unit, a control unit, and a data processing unit. The detection unit and the control unit are bidirectionally connected, and the output terminal of the control unit is connected to the input terminal of the data processing unit.

[0016] Furthermore, a detection method for an X-ray diffraction measurement system for silicon wafer oxide layers, using the aforementioned X-ray diffraction measurement system for silicon wafer oxide layers, includes the following steps;

[0017] S1: The carrier box containing silicon wafer material is transported to the entrance of the detector body through the cooperation of the transmission component and the transfer mechanism. Then, the mechanical gripper transfers the carrier box containing silicon wafer material into the detector body, and then the detector body performs detection.

[0018] S2: During the detection process, X-rays are generated and received by the detector body, and the generation and reception of X-rays are controlled by the control unit. Then, the received X-ray data is processed by the data processing unit, and the processed X-ray data is calculated to finally obtain the size and distribution of oxide layer faults in the silicon wafer material.

[0019] Beneficial effects

[0020] This invention provides an X-ray diffraction measurement system and detection method for silicon wafer oxide layers. Compared with existing technologies, it has the following advantages:

[0021] (1) The present invention uses a magnetic attraction method to limit the carrier box carrying silicon wafer material during the transmission process by using the transfer mechanism, which improves the stability of the transmission and facilitates the limiting of carrier boxes of different sizes, thereby facilitating the transmission of silicon wafer materials of different sizes and making it convenient to detect silicon wafer materials of different specifications and sizes. Furthermore, the cooperation between the transmission component and the transfer mechanism facilitates the transmission of carrier boxes of different specifications and sizes, making it convenient for practical use.

[0022] (2) The present invention ensures that the conductor seat and the conductor post are in full contact through the adjustment component of the transfer mechanism, thereby ensuring normal conduction of the electromagnet and normal conduction when the electromagnet rotates with the support platform. This allows the support platform to still magnetically limit the carrier box and silicon wafer material when it rotates, improving the stability of the transfer. In long-term use, the first spring is squeezed to improve the support effect of the first spring on the second mounting seat and the conductor seat, ensuring full contact between the conductor seat and the conductor post, ensuring the stability of the magnetic limit, and eliminating the need to frequently replace the first spring.

[0023] (3) The present invention uses an X-ray diffraction measurement system to measure the size and distribution of oxide stacking faults through the detector body. It can perform the measurement efficiently and is applicable to samples of different types and states. It can provide real-time measurement results, which is convenient for researchers to perform real-time analysis and adjustment. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0025] Figure 2 This is a schematic diagram of the transfer mechanism structure of the present invention;

[0026] Figure 3 This is a cross-sectional view of the transfer mechanism of the present invention;

[0027] Figure 4 This is an exploded view of the transfer mechanism of the present invention;

[0028] Figure 5 This is a bottom view of the worm gear, worm, and second mounting base of the present invention.

[0029] Figure 6 This is a schematic diagram of part of the adjustment component structure of the present invention;

[0030] Figure 7 This is a schematic diagram of the transmission component structure of the present invention;

[0031] Figure 8 This is a schematic diagram of the carrier box and magnetic metal plate structure of the present invention;

[0032] Figure 9 This is a schematic diagram of the connection structure of the detection unit, control unit and data processing unit of the present invention.

[0033] In the diagram, 1. Detector body; 2. Transmission assembly; 21. Limiting plate; 22. Cylinder; 23. Mounting bracket; 24. Conveyor; 3. Transfer mechanism; 31. Support platform; 32. Magnetic suction assembly; 321. Cover plate; 322. Conductor post; 323. Conductor seat; 324. Second mounting seat; 325. Mounting hole; 326. Electromagnet; 327. First mounting seat; 328. Magnetic metal plate; 33. Drive assembly; 331. Worm gear; 332. Servo motor; 333. Worm wheel; 334. Connecting plate; 335. Support rod; 34. Adjustment assembly; 341. Baffle; 342. Threaded rod; 343. First spring; 344. Sealing plate; 345. Ratchet; 346. Fixing plate; 347. Second spring; 348. Pawl; 4. Carrier platform; 5. Mechanical claw; 6. Carrier box. Detailed Implementation

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0035] Example 1

[0036] Please see Figure 1 , Figure 2 and Figure 9 An X-ray diffraction measurement system for silicon wafer oxide layers includes a detector body 1 for measuring dislocations in the silicon wafer oxide layer, a support stage 4 fixedly disposed on the front of the detector body 1, and a support box 6 for carrying the silicon wafer material. The detector body 1 has a mechanical claw 5 disposed inside on the side near the support stage 4. It also includes a transfer mechanism 3 disposed on the top of the support stage 4 and a transmission component 2 disposed on the top left side of the support stage 4 for transporting the support box 6 containing the silicon wafer material.

[0037] Please see Figure 9 An X-ray diffraction measurement system for silicon wafer oxide layers further includes a detection unit, a control unit, and a data processing unit. The detection unit and the control unit are bidirectionally connected, and the output of the control unit is connected to the input of the data processing unit.

[0038] In practice, X-rays are generated and received by the detector body 1 of the detection unit, and the generation and reception of X-rays are controlled by the control unit. Then, the received X-ray data is processed by the data processing unit, and the processed X-ray data is calculated to finally obtain the size and distribution of oxide layer faults in the silicon wafer material.

[0039] Example 2

[0040] Please see Figure 2 and Figure 3 The transfer mechanism 3 includes a support platform 31 sleeved on the top of the carrier platform 4, a magnetic suction component 32 set on the top of the carrier platform 4 for limiting the carrier box 6, and an adjustment component 34 set at the center of the top of the carrier platform 4 for assisting the magnetic suction component 32 in magnetically limiting the carrier box 6.

[0041] Please see Figure 3 , Figure 4 and Figure 8 The magnetic attraction assembly 32 includes a first mounting base 327 fixedly mounted on the top of the support platform 31 and arranged in a circular array, an electromagnet 326 fixedly mounted in the first mounting base 327, a conductor post 322 fixedly connected to the electromagnet 326 and extending to the bottom of the support platform 31, and a magnetic metal plate 328 fixedly mounted on the bottom of the carrier box 6. The top of the first mounting base 327 is fixedly provided with a cover plate 321 to shield the electromagnet 326 for easy use. The top of the cover plate 321 is horizontal with the top of the support platform 31 to avoid affecting the transport of the carrier box 6. The top of the support platform 31 has a mounting groove for mounting the first mounting base 327 in a circular array for easy installation. The magnetic attraction assembly 32 also includes a second mounting base 324 located at the bottom of the support platform 31, a conductor seat 323 fixedly mounted in the second mounting base 324, and a mounting hole 325. The top of the conductor seat 323 is concave, and the side wall of the conductor post 322 is fitted inside the conductor seat 323.

[0042] Mounting hole 325 is located at the center of the bottom of the shaft and extends into the second mounting base 324.

[0043] In practical implementation, the wire is connected to the conductor seat 323 through the mounting hole 325, thereby energizing the conductor seat 323. That is, the electromagnet 326 is energized through the conductor seat 323 and the conductor post 322, causing the electromagnet 326 to generate magnetic attraction, thereby magnetically attracting and limiting the carrier box 6 containing the magnetic metal plate 328. This allows the carrier box 6 to rotate when the subsequent drive assembly 33 drives the support platform 31 to rotate, thus facilitating the transfer of silicon wafer materials. Furthermore, the magnetic attraction method for limiting the carrier box 6 facilitates the magnetic attraction and limiting of carrier boxes 6 with different gears, thereby facilitating the transfer of silicon wafer materials of different sizes and, consequently, facilitating the inspection of silicon wafer materials of different sizes.

[0044] Both the first mounting base 327 and the second mounting base 324 are made of insulating material to prevent electrical conduction and facilitate the installation of the electromagnet 326 and the conductor base 323. The magnetic metal sheet is made of magnetic metal such as iron and cooperates with the electromagnet 326 for easy magnetic fixation.

[0045] As one embodiment, an electric heating wire can be installed inside the cover plate 321, and the electric heating wire can be connected to the conductor post 322 through a wire to supply power to the electric heating wire, thereby heating the cover plate 321. Then, the carrier box 6 and silicon wafer material can be heated according to the actual situation, which is convenient for actual testing. This technology is existing technology and will not be described in detail here. It is not shown in the figure.

[0046] Please see Figure 3 , Figure 4 and Figure 6 The adjusting assembly 34 includes a threaded rod 342 rotatably connected to the top center of the support platform 31 and extending to the bottom of the second mounting base 324, and a baffle 341 threadedly connected to one end of the threaded rod 342 located at the bottom side wall of the second mounting base 324. A first spring 343 is sleeved on the top of the baffle 341 and on the side wall of the threaded rod 342. The top of the second mounting base 324 has a through hole for sleeved threaded rod 342, and a groove is formed at the top center of the support platform 31. The threaded rod 342 is located on the top of the support platform 31. One end is located in the groove, and the inner wall of the mounting groove is fitted with a sealing plate 344. The top edge of the sealing plate 344 is provided with a ring array of insertion holes. The adjustment assembly 34 also includes a fixing plate 346 fixedly installed on the inner wall of the bottom of the groove and mirror-symmetrical about the center point of the groove, and a pawl 348 hinged to the fixing plate 346. The threaded rod 342 is fixedly fitted with a ratchet 345 that meshes with the pawl 348 on the side wall of one end located in the groove. The inner side of the pawl 348 is fixedly provided with a second spring 347 that is fixedly connected to the fixing plate 346.

[0047] In practical implementation, the elastic force of the first spring 343 ensures full contact between the conductor seat 323 and the conductor post 322, thereby guaranteeing normal conductivity of the electromagnet 326. This also ensures normal conductivity of the electromagnet 326 as it rotates with the support platform 31, allowing the support platform 31 to continue magnetically attracting and limiting the carrier box 6 and the silicon wafer material during rotation, thus improving the stability of the transport. During long-term use, wear may occur due to the continuous rotation of the conductor post 322 within the conductor seat 323, potentially leading to poor contact between the conductor post 322 and the conductor seat 323. The elastic force of the first spring 343 prevents this from affecting the connection between the conductor post 322 and the conductor seat 323. The limiting mechanism for the carrier box 6 and the silicon wafer material is affected by the plastic deformation of the spring during long-term compression, which can affect the elastic support effect. To address this, the sealing plate 344 is opened to disengage the pawl 348 from the ratchet 345. Then, the threaded rod 342 is rotated. As the threaded rod 342 rotates, it drives the baffle 341 to move upward, thereby compressing the first spring 343. This improves the support effect of the first spring 343 on the second mounting base 324 and the conductor base 323, ensuring full contact between the conductor base 323 and the conductor post 322, guaranteeing the stability of the magnetic limiting mechanism, and eliminating the need for frequent replacement of the first spring 343.

[0048] The self-locking direction of the pawl 348 and the ratchet 345 is opposite to the rotation direction of the support platform 31, thereby ensuring that the support platform 31 will not drive the ratchet 345 and the threaded rod 342 to rotate through the pawl 348 when rotating, and the threaded rod 342 is limited by the ratchet 345 and the pawl 348 to ensure the stability of the threaded rod 342.

[0049] Please see Figure 2 , Figure 3 , Figure 4 and Figure 5 The transfer mechanism 3 also includes a drive assembly 33 installed inside the support platform 4 for driving the support platform 31 to rotate. The drive assembly 33 cooperates with the transfer assembly 2 and the mechanical claw 5 to transport the carrier box 6 containing silicon wafer material to the detector body 1.

[0050] The drive assembly 33 includes a support rod 335 fixedly mounted on the bottom of the support platform 31 and arranged in a circular array, a connecting plate 334 fixedly mounted on the bottom of the support rod 335, and a servo motor 332 fixedly mounted inside the support platform 4. A rotating shaft is fixedly mounted on the bottom of the connecting plate 334, and a worm gear 333 is fixedly mounted on the side wall of the rotating shaft. A worm 331 that is rotatably connected to the support platform 4 is engaged on the side wall of the worm gear 333. One end of the worm 331 is fixedly connected to the output shaft of the servo motor 332 through a coupling.

[0051] In practical implementation, the servo motor 332 is started, and the output shaft of the servo motor 332 drives the worm gear 331 to rotate. The worm gear 331 drives the worm wheel 333 to rotate, the worm wheel 333 drives the rotating shaft to rotate, the rotating shaft drives the connecting plate 334 to rotate, and the connecting plate 334 drives the support platform 31 to rotate through the support rod 335. In this way, the magnetic suction assembly 32 drives the carrier box 6 and the silicon wafer material to rotate, thereby transferring them.

[0052] Please see Figure 2 and Figure 7 The transmission component 2 includes a mounting frame 23 located on the top left side of the support platform 4 and a conveyor 24 fixedly installed in the mounting frame 23. On both sides of the outer side of the mounting frame 23 and on the top of the conveyor 24, cylinders 22 extending to the inner side of the mounting frame 23 are fixedly installed. The output shaft of the cylinder 22 is fixedly provided with a limiting plate 21, and the bottom of the limiting plate 21 is located on the top of the conveyor 24.

[0053] In practice, the conveyor 24 is started to transport the carrier box 6 containing silicon wafer material to the support platform 31. When transporting carrier boxes 6 of different sizes to transport silicon wafer material of different sizes, the output shaft of the cylinder 22 drives the baffle 341 to move, thereby restricting the transport path of the carrier box 6 on the conveyor 24. This allows for the transport of carrier boxes 6 of different sizes and silicon wafer material. The baffle 341 also limits the two sides of the carrier box 6, improving the stability of the transport.

[0054] The center position of the conveyor 24 is on the same horizontal line as the center position of the support platform 31, so that when conveying carrier boxes 6 and silicon wafers of different sizes, the carrier boxes 6 and silicon wafers fall onto the cover plate 321 via the conveyor 24, which facilitates magnetic attraction and limiting.

[0055] A method for detecting dislocations using an X-ray diffraction measurement system for silicon wafer oxide layers, comprising the following steps:

[0056] S1: The carrier box 6 containing silicon wafer material is transported to the entrance of the detector body 1 by the cooperation of the transmission component 2 and the transfer mechanism 3. Then, the mechanical claw 5 transfers the carrier box 6 containing silicon wafer material into the detector body 1, and then the detector body 1 performs the detection.

[0057] S2: During the detection process, X-rays are generated and received by the detector body 1, and the generation and reception of X-rays are controlled by the control unit. Then, the received X-ray data is processed by the data processing unit, and the processed X-ray data is calculated to finally obtain the size and distribution of oxide layer faults in the silicon wafer material.

[0058] The servo motor 332, robotic arm, and conveyor 24 of this invention are all connected to a power supply and controller for easy actual control.

[0059] Furthermore, any content not described in detail in this specification is existing technology known to those skilled in the art.

[0060] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0061] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. An X-ray diffraction measurement system for silicon wafer oxide layers, comprising a detector body for measuring dislocations in the silicon wafer oxide layer, a support stage fixedly disposed on the front side of the detector body, and a support box for supporting the silicon wafer material, wherein a mechanical gripper is disposed inside the detector body on the side near the support stage, characterized in that: It also includes a transfer mechanism located on top of the support platform and a transmission component located on the left side of the top of the support platform for transporting the carrier box containing silicon wafer material; The transfer mechanism includes a support platform sleeved on the top of the carrier platform, a magnetic suction component set on the top of the carrier platform for limiting the carrier box, and an adjustment component set at the center of the top of the carrier platform for assisting the magnetic suction component in magnetically limiting the carrier box. The magnetic attraction assembly includes a first mounting base fixedly disposed on the top of the support platform and arranged in a circular array, an electromagnet fixedly disposed in the first mounting base, a conductor post fixedly connected to the electromagnet and extending to the bottom of the support platform, and a magnetic metal plate fixedly disposed on the bottom of the carrier box. The top of the first mounting base is fixedly provided with a cover plate, the top of the cover plate is horizontal with the top of the support platform, and the top of the support platform is provided with mounting grooves for mounting the first mounting bases in a circular array. The magnetic attraction assembly also includes a second mounting base disposed at the bottom of the support platform, a conductor base fixedly disposed in the second mounting base, and a mounting hole. The top of the conductor base is concave, and the sidewall of the conductor post is sleeved inside the conductor base. The adjustment assembly includes a threaded rod rotatably connected to the top center of the support platform and extending to the bottom of the second mounting base, and a baffle threaded to the side wall of one end of the threaded rod located at the bottom of the second mounting base. A first spring is sleeved on the top of the baffle and on the side wall of the threaded rod. A through hole for sleeved threaded rod is opened on the top of the second mounting base. A groove is opened at the top center of the support platform. One end of the threaded rod located on the top of the support platform is located in the groove. A sealing plate is sleeved on the inner side wall of the mounting groove. A ring array of insertion holes is opened at the top edge of the sealing plate. The adjustment assembly also includes a fixed plate that is fixedly disposed on the inner wall of the bottom of the groove and is mirror-symmetrical about the center point of the groove, and a pawl that is hinged to the fixed plate. A ratchet that engages with the pawl is fixedly sleeved on the side wall of one end of the threaded rod located in the groove. A second spring that is fixedly connected to the fixed plate is fixedly disposed on the inner side of the pawl.

2. The X-ray diffraction measurement system for silicon wafer oxide layers according to claim 1, characterized in that: The transfer mechanism also includes a drive component installed inside the support platform for driving the support platform to rotate. The drive component works with the transmission component and the mechanical gripper to transport the carrier box containing silicon wafer material into the detector body. The drive assembly includes a support rod fixedly mounted on the bottom of the support platform and arranged in a circular array, a connecting plate fixedly mounted on the bottom of the support rod, and a servo motor fixedly mounted inside the support platform. A rotating shaft is fixedly mounted on the bottom of the connecting plate, and a worm gear is fixedly mounted on the side wall of the rotating shaft. A worm gear is engaged with the side wall of the worm gear and is rotatably connected to the support platform. One end of the worm gear is fixedly connected to the output shaft of the servo motor through a coupling.

3. The X-ray diffraction measurement system for silicon wafer oxide layers according to claim 1, characterized in that: The mounting hole is located at the center of the bottom of the rotating shaft and extends into the second mounting base.

4. The X-ray diffraction measurement system for silicon wafer oxide layers according to claim 1, characterized in that: The transmission assembly includes a mounting frame located on the top left side of the support platform and a conveyor fixedly installed inside the mounting frame. Cylinders extending into the inside of the mounting frame are fixedly installed on both sides of the outer side of the mounting frame and on the top of the conveyor. A limiting plate is fixedly installed on the output shaft of the cylinder, and the bottom of the limiting plate is located on the top of the conveyor.

5. The X-ray diffraction measurement system for silicon wafer oxide layers according to claim 1, characterized in that: It also includes a detection unit, a control unit, and a data processing unit. The detection unit and the control unit are bidirectionally connected, and the output of the control unit is connected to the input of the data processing unit.

6. A method for detecting dislocations in an X-ray diffraction measurement system for silicon wafer oxide layers, characterized in that: The method of measuring dislocations using an X-ray diffraction system for silicon wafer oxide as described in claim 5 includes the following steps; S1: The carrier box containing silicon wafer material is transported to the entrance of the detector body through the cooperation of the transmission component and the transfer mechanism. Then, the mechanical gripper transfers the carrier box containing silicon wafer material into the detector body, and then the detector body performs detection. S2: During the detection process, X-rays are generated and received by the detector body, and the generation and reception of X-rays are controlled by the control unit. Then, the received X-ray data is processed by the data processing unit, and the processed X-ray data is calculated to finally obtain the size and distribution of oxide layer faults in the silicon wafer material.

Images