A kind of A, B co-doped BaTiO3-based high-entropy dielectric film and a preparation method thereof

Abstract

The application provides a BaTiO3-based high-entropy dielectric film co-doped with A and B sites and a preparation method thereof, and relates to the field of dielectric ceramic capacitors. 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1‑x )O3, wherein x=0.05-0.2.The application introduces a certain concentration of Zr 4+ In the high-entropy dielectric film, thereby improving the dielectric energy storage performance of the BaTiO3 film material, and finally obtaining a BaTiO3-based high-entropy dielectric film material with small crystal grains, high recoverable energy density, stable dielectric constant and single-phase crystal structure.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of dielectric ceramic capacitors, in particular to an A and B co-doped BaTiO3-based high-entropy dielectric film and a preparation method thereof. BACKGROUND

[0002] Ceramic dielectric capacitors are widely used due to their fast charge and discharge rate, high power density, safety and stability and other advantages. As a typical lead-free perovskite dielectric ceramic material, barium titanate (BaTiO3) has excellent dielectric properties and is widely used in the field of capacitors. With the development of electronic devices and optoelectronic devices towards miniaturization and integration, BaTiO3 thin film materials have also been widely concerned. However, the low breakdown field strength (E b ) of BaTiO3 material seriously restricts the improvement of its recoverable energy density (W rec ). Studies have shown that the resistance value at the grain boundary is higher than that in the grain interior, so refining the grain size of BaTiO3 and increasing the interface proportion of the grain are beneficial to improving the E b of BaTiO3-based dielectric capacitors, and thus improving the recoverable energy density.

[0003] High-entropy design of BaTiO3 thin film materials can not only obtain stable single-phase solid solutions, but also can enhance existing properties and obtain unique properties due to the "cocktail effect" of mixing multiple different ions in the same lattice. In addition, the obvious lattice distortion and element retardation diffusion effect inhibit the growth of the grain, so that the interface proportion is increased. These make the BaTiO3-based high-entropy thin film material exhibit excellent performance in dielectric energy storage.

[0004] Studies have shown that Zr-doped BaTiO3-based thin film materials can slow down the diffusion rate and reduce the average grain size of the material. Zr doping can inhibit electron transition and reduce loss, thereby improving the relative dielectric constant (ε r ) and the recoverable energy density (W rec ). Therefore, different concentrations of Zr 4+ are introduced to further refine the grain size of the high-entropy thin film to improve the relative dielectric constant (ε r ) and E b of the high-entropy thin film, and thus improve W rec . This is a way to improve the dielectric energy storage performance of the high-entropy thin film.

[0005] The sol-gel method combined with a spin coating process is used to prepare the thin film, and the technical operation is safe and simple; compared with a physical vapor deposition (PVD) and a chemical vapor deposition (CVD) method for preparing a thin film, the thin film prepared by the method has better flatness and thickness uniformity, and is beneficial to element doping and control of a stoichiometric ratio of each element, and is very beneficial to preparation of a high-entropy thin film multi-component material. SUMMARY

[0006] Therefore, the application provides an A and B co-doped BaTiO3-based high-entropy dielectric thin film and a preparation method thereof. 4+ The grain refinement of the high-entropy thin film further improves the dielectric energy storage performance of the BaTiO3-based high-entropy thin film, and finally, the BaTiO3-based high-entropy dielectric thin film material with small grains, high recoverable energy density, stable dielectric constant and single-phase crystal structure is obtained.

[0007] The application is implemented by using the following technical scheme.

[0008] An A and B co-doped BaTiO3-based high-entropy dielectric thin film has the following structural formula:

[0009] (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1-x )O3, wherein x = 0.05-0.2.

[0010] A preparation method of an A and B co-doped BaTiO3-based high-entropy dielectric thin film includes the following steps.

[0011] (1) preparing a composite acetate solution:

[0012] The composite acetate solution is prepared by using barium acetate, strontium acetate, sodium acetate, calcium acetate, lanthanum acetate and glacial acetic acid;

[0013] The concentrations of the barium acetate, the strontium acetate, the sodium acetate, the calcium acetate and the lanthanum acetate in the composite acetate solution are all 0.1 mol / L;

[0014] (2) preparing a n-butyl zirconium / titanium tetrabutoxide mixed solution:

[0015] The n-butyl zirconium / titanium tetrabutoxide mixed solution is prepared by using n-butyl zirconium, titanium tetrabutoxide and ethylene glycol methyl ether;

[0016] The concentration of zirconium n-butoxide in the zirconium n-butoxide / tetrabutyl titanate mixed solution is 0.015-0.1 mol / L, and the concentration of tetrabutyl titanate is 0.4-0.475 mol / L.

[0017] (3) The composite acetate solution in step (1) and the zirconium n-butoxide / tetrabutyl titanate mixed solution in step (2) are mixed in equal volume to obtain a mixed solution;

[0018] (4) Acetylacetone is added to the mixed solution in step (3), and a precursor sol is formed after stirring and standing;

[0019] (5) The Pt(111) / Ti / SiO2 / Si substrate is cleaned by ultrasonic in anhydrous ethanol, and is dried for standby;

[0020] (6) The precursor sol is spin-coated on the surface of the cleaned Pt(111) / Ti / SiO2 / Si substrate, and the dropwise amount of the precursor sol is 0.05-0.1 g / cm 2 ; 2 , to obtain a single-layer high-entropy film wet film;

[0021] (7) The single-layer high-entropy film wet film is sequentially dried, pyrolyzed and pre-fired to obtain a single-layer high-entropy film;

[0022] (8) Steps (6) and (7) are repeated to obtain a multi-layer high-entropy film, and finally sintering is performed to obtain an A and B co-doped BaTiO3-based high-entropy dielectric film.

[0023] Preferably, the preparation temperature of the composite acetate solution in step (1) is 50-75°C.

[0024] Preferably, the volume ratio of the mixed solution obtained in step (3) to acetylacetone in step (4) is 60:1.

[0025] Preferably, the stirring time in step (4) is 6-10 h, and the standing time is 10-24 h.

[0026] Preferably, the spin-coating in step (6) is first spin-coated at a speed of 800-1100 rpm for 10-15 s, and then spin-coated at a speed of 3500-4000 rpm for 30-40 s.

[0027] Preferably, the drying in step (7) is first dried at 80°C for 10 min, and then dried at 130°C for 20 min; the pyrolysis temperature is 400-450°C, and the pyrolysis time is 30 min; the pre-firing temperature is 550-650°C, and the pre-firing time is 5-10 min.

[0028] Preferably, the sintering temperature in step (8) is 750 DEG C, and the sintering time is 20 min.

[0029] The A, B co-doped BaTiO3-based high-entropy dielectric film has a thickness of 300-400 nm.

[0030] The A, B co-doped BaTiO3-based high-entropy dielectric film has an average grain size of 39.93-74.69 nm.

[0031] Compared with the prior art, the present application has the following beneficial effects:

[0032] (1) The high-entropy film prepared by the present application has good uniformity, simple production equipment and process method, and low economic cost.

[0033] (2) The high-entropy film material prepared by the present application has a single-phase perovskite structure, and no impurity phase is found in the XRD pattern, and all elements are uniformly distributed in the sample without segregation.

[0034] (3) The high-entropy film sample is finally annealed and sintered in an oxygen atmosphere, reducing the generation of oxygen vacancies in the high-entropy film, improving the resistance value and thus improving the E b value of the film.

[0035] (4) The introduction of Zr element effectively reduces the grain size of the film, improves the dielectric energy storage performance of the film material, and reduces the loss. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 XRD pattern of the A, B co-doped BaTiO3-based high-entropy dielectric film after sintering;

[0037] Figure 2 SEM and element distribution map of the A, B co-doped BaTiO3-based high-entropy dielectric film after sintering;

[0038] Figure 3 Grain size distribution map of the A, B co-doped BaTiO3-based high-entropy dielectric film;

[0039] Figure 4 Dielectric spectrum map of the A, B co-doped BaTiO3-based high-entropy dielectric film;

[0040] Figure 5 Electric hysteresis loop map of the A, B co-doped BaTiO3-based high-entropy dielectric film. DETAILED DESCRIPTION

[0041] The present application will be further described in detail below in conjunction with the drawings and specific implementation examples, but the scope of protection of the present application is not limited to the described content.

[0042] Embodiment 1

[0043] The application discloses a preparation method of an A and B co-doped BaTiO3-based high-entropy dielectric film, and the specific steps are as follows:

[0044] (1) 0.7663 g of barium acetate, 0.6171 g of strontium acetate, 0.2461 g of sodium acetate, 0.5285 g of calcium acetate and 0.9481 g of lanthanum acetate are weighed and dissolved in 6 ml of glacial acetic acid respectively, and then magnetically stirred at 60 DEG C until completely dissolved, and then the barium acetate solution, the strontium acetate solution, the sodium acetate solution, the calcium acetate solution and the lanthanum acetate solution after complete dissolution are uniformly mixed and stirred, and then cooled to room temperature to prepare an A solution;

[0045] (2) 0.3597 g of zirconium n-butyl alcohol with a mass concentration of 80% and 4.8496 g of tetrabutyl titanate are weighed and dissolved in 15 ml of ethylene glycol methyl ether respectively, and then magnetically stirred at room temperature until completely dissolved, and then the zirconium n-butyl alcohol solution and the tetrabutyl titanate solution after complete dissolution are uniformly mixed and stirred to prepare a B solution;

[0046] (3) the B solution is slowly added to the A solution to obtain a C solution, 1 ml of acetylacetone solution is added to the C solution, and then stirred at room temperature for 8 h, and then placed for 12 h to obtain a precursor sol;

[0047] (4) a Pt(111) / Ti / SiO2 / Si substrate is selected for a film, and the substrate is cleaned in anhydrous ethanol by ultrasonic cleaning for 3 min;

[0048] (5) 0.1 g / cm 2 The precursor sol is dropped on the cleaned Pt(111) / Ti / SiO2 / Si substrate, and then spin-coated on a spin coater at a rotating speed of 1000 rpm for 10 s and then at a rotating speed of 3800 rpm for 30 s to obtain a single-layer high-entropy film wet film;

[0049] (6) the prepared wet film is sequentially dried at 80 DEG C for 10 min, dried at 130 DEG C for 20 min, pyrolyzed at 420 DEG C for 30 min, and finally pre-burned at 600 DEG C for 5 min to obtain a single-layer high-entropy film;

[0050] (7) steps (5) and (6) are repeated until the thickness of the film reaches about 350 nm, and then sintered at 750 DEG C for 20 min in an oxygen atmosphere to obtain a (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr 0.05 Ti 0.95 )O3 high-entropy film.

[0051] Example 2

[0052] A preparation method of a BaTiO3-based high-entropy dielectric film co-doped with A and B sites, and the specific steps are as follows:

[0053] (1) 0.7663 g of barium acetate, 0.6171 g of strontium acetate, 0.2461 g of sodium acetate, 0.5285 g of calcium acetate and 0.9481 g of lanthanum acetate were weighed and dissolved in 6 ml of glacial acetic acid respectively, and magnetically stirred at 60°C until completely dissolved. Then the barium acetate solution, strontium acetate solution, sodium acetate solution, calcium acetate solution and lanthanum acetate solution after complete dissolution were mixed and stirred uniformly, and cooled to room temperature to prepare A solution;

[0054] (2) 0.7194 g of zirconium n-butyl alcohol with a mass concentration of 80% and 4.5943 g of tetrabutyl titanate were weighed and dissolved in 15 ml of ethylene glycol methyl ether respectively, and magnetically stirred at room temperature until completely dissolved. Then the zirconium n-butyl alcohol solution and tetrabutyl titanate solution after complete dissolution were mixed and stirred uniformly to prepare B solution;

[0055] (3) The B solution was slowly added to the A solution to obtain C solution, 1 ml of acetylacetone solution was added to the C solution, and stirred at room temperature for 8 h, and then stood for 12 h to obtain a precursor sol;

[0056] (4) The Pt(111) / Ti / SiO2 / Si substrate was selected for the film, and the substrate was cleaned in anhydrous ethanol for 3 min by ultrasonic wave;

[0057] (5) 0.1 g / cm 2 The precursor sol was dropped on the cleaned Pt(111) / Ti / SiO2 / Si substrate, and first spin-coated at a speed of 1000 rpm for 10 s, and then spin-coated at a speed of 3800 rpm for 30 s on a spin coater to obtain a single-layer high-entropy film wet film;

[0058] (6) The prepared wet film was sequentially dried at 80°C for 10 min, dried at 130°C for 20 min, pyrolyzed at 420°C for 30 min, and finally pre-fired at 600°C for 5 min to obtain a single-layer high-entropy film;

[0059] (7) Steps (5) and (6) were repeated until the thickness of the film reached about 350 nm, and then sintered at 750°C for 20 min in an oxygen atmosphere to obtain a (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr 0.1 Ti 0.9 )O3 high-entropy film.

[0060] Example 3

[0061] A preparation method of a BaTiO3-based high-entropy dielectric film co-doped with A and B sites, the specific steps are as follows:

[0062] (1) 0.7663 g of barium acetate, 0.6171 g of strontium acetate, 0.2461 g of sodium acetate, 0.5285 g of calcium acetate and 0.9481 g of lanthanum acetate are weighed and dissolved in 6 ml of glacial acetic acid respectively, and magnetically stirred at 60°C until completely dissolved, then the completely dissolved barium acetate solution, strontium acetate solution, sodium acetate solution, calcium acetate solution and lanthanum acetate solution are mixed and stirred uniformly, and cooled to room temperature to prepare an A solution;

[0063] (2) 1.0791 g of zirconium n-butyl alcohol with a mass concentration of 80% and 4.3391 g of tetrabutyl titanate are weighed and dissolved in 15 ml of ethylene glycol methyl ether respectively, and magnetically stirred at room temperature until completely dissolved, then the completely dissolved zirconium n-butyl alcohol solution and tetrabutyl titanate solution are mixed and stirred uniformly to prepare a B solution;

[0064] (3) The B solution is slowly added to the A solution to obtain a C solution, 1 ml of acetylacetone solution is added to the C solution, stirred at room temperature for 8 h, and then placed for 12 h to obtain a precursor sol;

[0065] (4) The Pt(111) / Ti / SiO2 / Si substrate is selected, and the substrate is cleaned in anhydrous ethanol for 3 min by ultrasonic wave;

[0066] (5) 0.1 g / cm 2 The precursor sol is dropped on the cleaned Pt(111) / Ti / SiO2 / Si substrate, and the wet film of the single-layer high-entropy film is obtained by spin coating at a speed of 1000 rpm for 10 s and then at a speed of 3800 rpm for 30 s on a spin coater;

[0067] (6) The prepared wet film is sequentially dried at 80°C for 10 min, dried at 130°C for 20 min, pyrolyzed at 420°C for 30 min, and finally pre-burned at 600°C for 5 min to obtain a single-layer high-entropy film;

[0068] (7) Steps (5) and (6) are repeated until the thickness of the film reaches about 350 nm, and then sintered at 750°C for 20 min in an oxygen atmosphere to obtain a (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr 0.15 Ti 0.85 )O3 high-entropy film.

[0069] Example 4

[0070] A preparation method of a BaTiO3-based high-entropy dielectric film co-doped with A and B, the specific steps are as follows:

[0071] (1) 0.7663 g of barium acetate, 0.6171 g of strontium acetate, 0.2461 g of sodium acetate, 0.5285 g of calcium acetate and 0.9481 g of lanthanum acetate were weighed and dissolved in 6 ml of glacial acetic acid respectively, and magnetically stirred at 60℃ until completely dissolved, then the completely dissolved barium acetate solution, strontium acetate solution, sodium acetate solution, calcium acetate solution and lanthanum acetate solution were mixed and stirred uniformly, and cooled to room temperature to prepare A solution;

[0072] (2) 1.4388 g of zirconium n-butyl alcohol with a mass concentration of 80% and 4.0838 g of tetrabutyl titanate were weighed and dissolved in 15 ml of ethylene glycol methyl ether respectively, and magnetically stirred at room temperature until completely dissolved, then the completely dissolved zirconium n-butyl alcohol solution and tetrabutyl titanate solution were mixed and stirred uniformly to prepare B solution;

[0073] (3) B solution was slowly added to A solution to obtain C solution, 1 ml of acetylacetone solution was added to C solution, stirred at room temperature for 8 h, and then stood for 12 h to obtain a precursor sol;

[0074] (4) Pt(111) / Ti / SiO2 / Si substrate was selected for the film, and the substrate was cleaned in anhydrous ethanol for 3 min by ultrasonic wave;

[0075] (5) 0.1 g / cm 2 The precursor sol was dropped on the cleaned Pt(111) / Ti / SiO2 / Si substrate, and was first spin-coated at a speed of 1000 rpm for 10 s and then at a speed of 3800 rpm for 30 s on a spin coater to obtain a single-layer high-entropy film wet film;

[0076] (6) The prepared wet film was sequentially dried at 80℃ for 10 min, 130℃ for 20 min and 420℃ for 30 min, and finally pre-fired at 600℃ for 5 min to obtain a single-layer high-entropy film;

[0077] (7) Steps (5) and (6) were repeated until the thickness of the film reached about 350 nm, and then sintered at 750℃ for 20 min in an oxygen atmosphere to obtain a (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr 0.2 Ti 0.8 )O3 high-entropy film.

[0078] Comparative Example 1

[0079] A kind of preparation method of BaTiO3-based high-entropy dielectric film co-doped with A and B, the specific steps are as follows:

[0080] (1) 0.7663 g of barium acetate, 0.6171 g of strontium acetate, 0.2461 g of sodium acetate, 0.5285 g of calcium acetate and 0.9481 g of lanthanum acetate are weighed into 6 ml of glacial acetic acid, respectively, and stirred magnetically at 60°C until completely dissolved. Then the completely dissolved barium acetate solution, strontium acetate solution, sodium acetate solution, calcium acetate solution and lanthanum acetate solution are mixed and stirred uniformly. After cooling to room temperature, A solution is prepared.

[0081] (2) 5.1048 g of tetrabutyl titanate is weighed into 30 ml of ethylene glycol methyl ether and stirred magnetically at room temperature to prepare B solution.

[0082] (3) B solution is slowly added to A solution to obtain C solution. 1 ml of acetylacetone solution is added to C solution, stirred at room temperature for 8 h, and then placed for 12 h to obtain a precursor sol.

[0083] (4) Pt(111) / Ti / SiO2 / Si substrate is selected for the film, and the substrate is cleaned in anhydrous ethanol for 3 min with ultrasonic wave.

[0084] (5) 0.1 g / cm 2 The precursor sol is dropped on the cleaned Pt(111) / Ti / SiO2 / Si substrate, and a single-layer high-entropy film wet film is obtained by spinning at 1000 rpm for 10 s and then at 3800 rpm for 30 s on a spin coater.

[0085] (6) The prepared wet film is sequentially dried at 80°C for 10 min, 130°C for 20 min and 420°C for 30 min, and finally sintered at 600°C for 5 min to obtain a single-layer high-entropy film.

[0086] (7) Steps (5) and (6) are repeated until the film thickness reaches about 350 nm, and then sintered at 750°C for 20 min in an oxygen atmosphere to obtain a (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )TiO3 high-entropy film.

[0087] According to Figure 1 (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1-xXRD patterns of the sintered high-entropy thin films of (Ba

[0088] According to Figure 2 XRD patterns of the sintered high-entropy thin films of (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1-x )O3(x = 0, 0.05, 0.1, 0.15, 0.2), it can be clearly seen that the high-entropy thin films prepared in Comparative Example 1 and Examples 1-4 all form single-phase solid solutions, and no other impurity phases are detected, all being single perovskite structures. Figure 2 (a)-(e) are SEM morphology diagrams of the high-entropy thin films prepared in Comparative Example 1 and Examples 1-4, respectively, all the thin film surfaces are flat, and the thicknesses of all the thin films are about 350 nm as shown in Figure 2 (f). Figure 2 (g)-(k) are EDS element distribution diagrams of the high-entropy thin films prepared in Comparative Example 1 and Examples 1-4, respectively, all the elements are uniformly distributed in the samples, and there is no element segregation phenomenon.

[0089] According to Figure 3 XRD patterns of the sintered high-entropy thin films of (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1-x )O3(x = 0, 0.05, 0.1, 0.15, 0.2), Figure 3 (a)-(e) are grain size distribution diagrams of Comparative Example 1 and Examples 1-4, respectively, the grain sizes of Comparative Example 1 and Examples 1-4 all conform to normal distribution, and the average grain sizes are between 39.93 nm and 74.69 nm, wherein the introduction of Zr element greatly reduces the grain size of the high-entropy thin film.

[0090] According to Figure 4 XRD patterns of the sintered high-entropy thin films of (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1-xFig. 2 is a diagram of dielectric spectrum of high-entropy thin film sintered from (Ba Figure 4 Fig. 3 is a diagram of dielectric constant of high-entropy thin film sintered from (Ba Figure 4 Fig. 4 is a diagram of dielectric loss of high-entropy thin film sintered from (Ba Fig. 5 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba

[0091] Fig. 6 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba Figure 5 Fig. 7 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 0.2 Fig. 8 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 0.2 Fig. 9 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 0.2 Fig. 10 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 0.2 Fig. 11 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 0.2 Fig. 12 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba x Fig. 13 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 1-x Fig. 14 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba Figure 5 Fig. 15 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba Figure 5 Fig. 16 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba Figure 5 Fig. 17 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba 3 Fig. 18 is a diagram of electric hysteresis loop of high-entropy thin film sintered from (Ba

[0092] The above merely illustrates the preferred embodiments of the present application, and it should be noted that, for those skilled in the art, some improvements and refinements can be made without departing from the principles of the present application, and these improvements and refinements should also be considered within the protection scope of the present application.

Claims

1. A A, B co-doped BaTiO3-based high-entropy dielectric thin film, characterized in that, The high-entropy dielectric film has a structure as shown in the following formula: (Ba 0.2 Sr 0.2 Na 0.2 Ca 0.2 La 0.2 )(Zr x Ti 1-x )O3, wherein x = 0.05 to 0.2; The preparation method of the A, B co-doped BaTiO3-based high-entropy dielectric film comprises the following steps: (1) preparing a composite acetate solution: The composite acetate solution is prepared by using barium acetate, strontium acetate, sodium acetate, calcium acetate, lanthanum acetate and glacial acetic acid; The concentrations of barium acetate, strontium acetate, sodium acetate, calcium acetate and lanthanum acetate in the composite acetate solution are all 0.1 mol / L; (2) preparing a zirconium n-butyl alcohol / tetrabutyl titanate mixed solution: The zirconium n-butyl alcohol / tetrabutyl titanate mixed solution is prepared by using zirconium n-butyl alcohol, tetrabutyl titanate and ethylene glycol methyl ether; The mass concentration of zirconium n-butyl alcohol in the zirconium n-butyl alcohol / tetrabutyl titanate mixed solution is 0.015 mol / L-0.1 mol / L, and the mass concentration of tetrabutyl titanate is 0.4 mol / L-0.475 mol / L; (3) mixing the composite acetate solution in step (1) and the zirconium n-butyl alcohol / tetrabutyl titanate mixed solution in step (2) in equal volume to obtain a mixed solution; (4) adding acetylacetone into the mixed solution in step (3), and stirring and standing to form a precursor sol; (5) placing a Pt(111) / Ti / SiO2 / Si substrate in anhydrous ethanol for ultrasonic cleaning, and drying to obtain a standby substrate; (6) The precursor sol is spin-coated on the surface of the cleaned Pt(111) / Ti / SiO2 / Si substrate, and the dropwise amount of the precursor sol is 0.05 g / cm 2 ~0.1 g / cm 2 A single-layer high-entropy film wet film is obtained; (7) drying, pyrolyzing and pre-burning the single-layer high-entropy film wet film in sequence to obtain a single-layer high-entropy film; (8) repeating steps (6) and (7) to obtain a multi-layer high-entropy film, and finally sintering to obtain an A, B co-doped BaTiO3-based high-entropy dielectric film. 2.The A, B co-doped BaTiO 3-based high-entropy dielectric film of claim 1, wherein, The preparation temperature of the composite acetate solution in step (1) is 50-75°C. 3.The A, B co-doped BaTiO 3-based high-entropy dielectric film of claim 1, wherein, The volume ratio of the mixed solution obtained in step (3) to acetylacetone in step (4) is 60:

1.

4. The A, B co-doped BaTi03-based high-entropy dielectric thin film according to claim 1, wherein, The stirring time in step (4) is 6-10 h, and the standing time is 10-24 h.

5. The A, B co-doped BaTi03-based high-entropy dielectric thin film of claim 1, wherein, The spin coating in step (6) is first spin coating at a rotation speed of 800-1100 rpm for 10-15 s, and then spin coating at a rotation speed of 3500-4000 rpm for 30-40 s.

6. The A, B co-doped BaTi03-based high-entropy dielectric thin film according to claim 1, wherein, The drying in step (7) is first drying at 80°C for 10 min, and then drying at 130°C for 20 min; the pyrolysis temperature is 400-450°C, and the pyrolysis time is 30 min; the pre-burning temperature is 550-650°C, and the pre-burning time is 5-10 min.

7. The BaTiO3-based high-entropy dielectric thin film co-doped at sites A and B according to claim 1, characterized in that, The sintering temperature in step (8) is 750°C, and the sintering time is 20 min.

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