Multilayer electronic components

Abstract

By preventing burnt, cracked, or short-circuited electronic components from occurring in high-voltage environments, this invention provides multilayer electronic components with excellent voltage resistance and reliability. [Solution] The multilayer ceramic capacitor, which is a multilayer electronic component, includes a body containing a first dielectric layer 111a, a second dielectric layer 111b, and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the body. The first dielectric layer mainly contains a BaTiO3-based material, and the second dielectric layer has a different main component from the first dielectric layer (α β Γ δ )Ti x O y The substance contains (β≧0, δ≧0, x>0, y>0) as its main component, where α is one or more of Ba, Er, Ca, and Sr, and Γ is one or more of Nb, Mg, Ta, In, Mn, Hf, Zr, and Al.

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-type capacitor that is mounted on printed circuit boards of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and plays a role in charging or discharging electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] On the other hand, a high-capacitance multilayer ceramic capacitor can be manufactured by thinning the dielectric layer. However, the thinner the dielectric layer becomes, the more likely the overall insulation characteristics of the multilayer ceramic capacitor are to deteriorate. Therefore, various studies, such as studies on enhancing the dielectric / insulation characteristics of the material itself, are being conducted to improve structurally and materially.

[0005] However, when the dielectric layer is excessively thinned or an additive is inappropriately added to barium titanate (BaTiO3), which is a commonly used dielectric material for multilayer ceramic capacitors, it may be accompanied by negative effects such as a decrease in process workability, frequent process defects, and a decrease in dielectric / insulation characteristics.

[0006] For example, when using thin dielectric layers, even minor factors can be vulnerable, potentially increasing the process defect rate. These defects can include various issues such as sheet folding due to static electricity, breakage and roughness defects in the dielectric / internal electrode layer, cracks, and delamination. Ultimately, these defects act as preferred sites for burnt formation when a high electric field is applied, degrading the characteristics and quality of the multilayer ceramic capacitor, or reducing its function as a capacitor. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2012-206890 [Overview of the Initiative] [Problems that the invention aims to solve]

[0008] One of the problems that the present invention aims to solve is to provide a multilayer electronic component with excellent voltage resistance and reliability by preventing the occurrence of burnt, cracked, or short-circuited circuits in a high-voltage environment by applying dielectric layers of different dielectric materials.

[0009] However, some of the problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0010] A stacked electronic component according to one embodiment of the present invention includes a body containing a first dielectric layer, a second dielectric layer, and internal electrodes, and external electrodes disposed on the body, wherein the first dielectric layer mainly contains a BaTiO3-based material, and the second dielectric layer has a different main component from the first dielectric layer (α β Γ δ )Tix O y The substance contains (β≧0, δ≧0, x>0, y>0) as its main component, where α is one or more of Ba, Er, Ca, and Sr, and Γ may be one or more of Nb, Mg, Ta, In, Mn, Hf, Zr, and Al. [Effects of the Invention]

[0011] One of the several effects of the present invention is to improve the voltage withstand characteristics and reliability of multilayer electronic components by preventing the occurrence of burnt, cracked, or short-circuited circuits in high-voltage environments.

[0012] However, the diverse yet beneficial advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0013] [Figure 1] This diagram schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view along the line I-I' in Figure 1. [Figure 3a] Figure 1 schematically shows a cross-sectional view along the line II-II' in various embodiments of the present invention. [Figure 3b] Figure 1 schematically shows a cross-sectional view along the line II-II' in various embodiments of the present invention. [Figure 3c] Figure 1 schematically shows a cross-sectional view along the line II-II' in various embodiments of the present invention. [Figure 4] This is a schematic cross-sectional view along the line II-II' in Figure 1. [Figure 5] In another embodiment of the present invention, a schematic cross-sectional view along the line II-II' in Figure 1 is shown. [Figure 6] This is a Step IR evaluation graph for the comparative example and the example. [Figure 7] (a) to (d) are images of the burnt generated in the comparative example, captured with an optical microscope (OM) and a scanning electron microscope (SEM). [Modes for carrying out the invention]

[0014] Embodiments of the present invention will be described below with reference to specific embodiments and accompanying drawings. However, embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to give a more complete explanation of the present invention to a person of the ordinary skill. Accordingly, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

[0015] Furthermore, in order to clearly illustrate the present invention in the drawings, parts unrelated to the explanation have been omitted, and the size and dimensions of each component shown in the drawings are arbitrarily shown for the convenience of explanation; therefore, the present invention is not necessarily limited to what is shown. Components with the same function within the scope of the same concept are described using the same reference numerals. Moreover, throughout the specification, when a part "includes" a component, this does not exclude other components unless otherwise stated, but rather means that it may further include other components.

[0016] In drawings, the Z direction can be defined as the thickness direction or the first direction, the X direction as the length direction or the second direction, and the Y direction as the width direction or the third direction. The lamination direction can be the thickness direction or the width direction.

[0017] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figures 3a to 3c schematically show cross-sectional views along the line II-II' in Figure 1 according to various embodiments of the present invention, Figure 4 schematically shows a cross-sectional view along the line II-II' in Figure 1, and Figure 5 schematically shows a cross-sectional view along the line II-II' in Figure 1 according to another embodiment of the present invention.

[0018] Hereinafter, with reference to Figures 1 to 5, a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0019] A stacked electronic component 100 according to one embodiment of the present invention includes a body 110 including a first dielectric layer 111a, a second dielectric layer 111b, and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the body 110, wherein the first dielectric layer 111a mainly contains a BaTiO3-based material, and the second dielectric layer 111b has a different main component from the first dielectric layer 111a (α β Γ δ )Ti x O y The substance contains (β≧0, δ≧0, x>0, y>0) as its main component, where α is one or more of Ba, Er, Ca, and Sr, and Γ may be one or more of Nb, Mg, Ta, In, Mn, Hf, Zr, and Al.

[0020] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately. Here, the dielectric layer 111 may include a first dielectric layer 111a and a second dielectric layer 111b, and the following description of the dielectric layer 111 can correspond to the description of the first dielectric layer 111a and the second dielectric layer 111b unless otherwise inconsistent.

[0021] More specifically, the main body 110 can include a capacitance forming portion Ac that is disposed inside the main body 110 and forms a capacitance by including a first internal electrode 121 and a second internal electrode 122 that are alternately disposed so as to face each other with the dielectric layer 111a and the dielectric layer 111 interposed therebetween. That is, the capacitance forming portion Ac can include a first dielectric layer 111a, a second dielectric layer 111b, and the first internal electrode 121 and the second internal electrode 122 that are alternately disposed with at least one of the first dielectric layer 111a and the second dielectric layer 111b interposed therebetween.

[0022] There is no particular limitation on the specific shape of the main body 110. As shown in the drawing, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a hexahedron shape with perfect straight lines, but can have a substantially hexahedron shape.

[0023] The main body 110 can have a first surface 1 and a second surface 2 that face each other in the thickness direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in the length direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in the width direction.

[0024] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to such an extent that it is difficult to confirm without using a scanning electron microscope (SEM).

[0025] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. However, in order to prevent the dielectric layer 111 from burning, cracking, or short-circuiting in a high-voltage environment, a first dielectric layer 111a mainly containing a barium titanate (BaTiO3)-based substance, and (α β Γ δ )Ti x O yA second dielectric layer 111b may be included, which mainly contains a material (β≧0, δ≧0, x>0, y>0). Here, α may be located at the A-site elemental position of a perovskite-based (ABO3) material, and Γ may be located at the B-site elemental position, but is not limited to these. In this case, the main components of the second dielectric layer 111b and the main components of the first dielectric layer 111a may be different, α may be one or more of Ba, Er, Ca, and Sr, and Γ may be one or more of Nb, Mg, Ta, In, Mn, Hf, Zr, and Al. Here, the main components of the second dielectric layer 111b and the main components of the first dielectric layer 111a are different if the main component of the first dielectric layer 111a is BaTiO3, and the main component of the second dielectric layer 111b is (α) excluding BaTiO3. β Γ δ )Ti x O y This means that it corresponds to a material (β≧0, δ≧0, x>0, y>0), and more specifically, for example, if the main component of the first dielectric layer 111a is BaTiO3, then the main component of the second dielectric layer 111b is Ba(Nb 0.02 Al 0.02 )Ti 0.96 O3 is also available.

[0026] In the present invention, "main component" can mean a component that accounts for a relatively large weight ratio or atomic ratio compared to other components, and can mean a component that accounts for more than 50 wt% of the total composition weight included in a particular configuration (for example, the first dielectric layer, the second dielectric layer), a component that accounts for more than 50 at% of the atomic number, or a component that accounts for more than 50 mol% of the mole number.

[0027] In the present invention, as an example of a more specific method for measuring the content of elements included in each component of the multilayer electronic component 100, the components can be analyzed using the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, a thin analysis sample is prepared from the region to be measured using a focused ion beam (FIB) equipment. Then, the damaged layer on the surface of the thinned sample is removed using xenon (Xe) or argon (Ar) ion milling, and then each component to be measured is mapped from the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can be expressed in terms of the content of each element, for example, mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%), and can also represent the content of other specific components with respect to the content of a specific component.

[0028] The first dielectric layer 111a can use a barium titanate (BaTiO3)-based material. The barium titanate (BaTiO3)-based material can contain BaTiO3-based ceramic particles. Examples of the ceramic particles include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1) in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved in BaTiO3, Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc.

[0029] Furthermore, the raw material for forming the first dielectric layer 111a can be ceramic particles such as barium titanate (BaTiO3) to which various ceramic additives, organic solvents, binders, dispersants, etc., can be added according to the purpose of the present invention.

[0030] The second dielectric layer 111b is (α β Γ δ )Ti x O y (β≧0, δ≧0, x>0, y>0) The substance mainly comprises a substance, and the above α may be one or more of Ba, Er, Ca and Sr, and the above Γ may be one or more of Nb, Mg, Ta, In, Mn, Hf, Zr and Al. (α β Γ δ )Ti x O y Examples of substances with (β≧0, δ≧0, x>0, y>0) include at least one of Ba(Nb,Ti)O3, Ba(Nb,Al,Ti)O3, Ba(Nb,Ti,Al,Mn)O3, Ba(Nb,Hf,Ti)O3, (Ba,Sr)(Nb,Ti)O3, and (Sr,Er)TiO3, and more specifically, Ba(Nb 0.02 Mg 0.02 )Ti 0.96 O3, Ba(Nb) 0.02 Al 0.02 )Ti 0.96 O3, (Er) 0.012 Sr 0.988 TiO3, (Ta 0.01 In 0.01 )Ti 0.98 O2, Sr(Nb) 0.05 Al 0.05 )Ti 0.90 It may contain at least one of the O3s. However, it is not limited to this, (α β Γ δ )Ti x O yAny dielectric material can be used as long as the total dopant content of the material (β≧0, δ≧0, x>0, y>0) is 10 mol% or less based on the site where the dopant is doped. However, it is preferable that the dopant content is different from the main component of the first dielectric layer 111a.

[0031] Here, (α β Γ δ )Ti x O y (β≧0, δ≧0, x>0, y>0) When the total content of dopant doped into a substance is 10 mol% or less based on the site where the dopant is doped, it means that when the total content of atoms that can be located at the A-site, B-site, or Ti-site of perovskite (ABO3) or titanium dioxide (TiO2) is 100 mol, the total content of dopant doped into the substance is 10 mol or less. To explain with a more specific example, Ba(Nb 0.02 Al 0.02 )Ti 0.96 In O3, Nb and Al correspond to dopants doped at the Ti-site, which corresponds to the B-site of a perovskite (ABO3) material, and the elemental site to which the dopant is doped is the Ti-site, which corresponds to the B-site. A total dopant content of 10 mol% means that when the total content of all Nb, Al, and Ti corresponding to the elemental site (site) where the dopant is doped is 100 mol, the total content of the dopants Nb and Al is 10 mol or less. That is, Ba(Nb 0.02 Al 0.02 )Ti 0.96 When the elemental position of O3 dopant is set to 100 mol (Nb 2 mol + Al 2 mol + Ti 96 mol), the total dopant content corresponds to 4 mol (Nb 2 mol + Al 2 mol).

[0032] Furthermore, the raw material for forming the second dielectric layer 111b is (α β Γδ )Ti x O y Various ceramic additives, organic solvents, binders, dispersants, etc., can be added to the material particles (β≧0, δ≧0, x>0, y>0) according to the purpose of the present invention.

[0033] In the present invention, by including the second dielectric layer 111b, burnt formation does not occur in high-voltage / high-electric-field environments, and dielectric or insulating properties can be restored when no voltage / electric field is applied, and other properties may not deteriorate. Furthermore, it can have a dielectric constant similar to or higher than that of the first dielectric layer 111a, which can contribute to an increase in nominal capacitance or effective capacitance.

[0034] The number of layers of the second dielectric layer 111b is not particularly limited, but it is preferable that it be the same as or less than the number of layers of the first dielectric layer 111a. In other words, it is preferable that the number of layers of the first dielectric layer 111a is greater than the number of layers of the second dielectric layer 111b.

[0035] This is because the second dielectric layer 111b may have a slightly higher dielectric loss (DF) than the first dielectric layer 111a, and its resistivity or insulation resistance (IR) characteristics may be slightly lower, potentially resulting in unintended characteristic resistances. Therefore, it is preferable to design the first dielectric layer 111a to have a greater number of layers than the second dielectric layer 111b.

[0036] Since the first dielectric layer 111a and the second dielectric layer 111b can be formed using a dielectric material, they can include a dielectric microstructure after firing. The dielectric microstructure can include multiple crystal grains, crystal grain boundaries located between adjacent crystal grains, and triple points located at points where three or more crystal grain boundaries meet, and can include multiple crystal grains, crystal grain boundaries, and triple points.

[0037] The average thicknesses tda and tdb of the dielectric layers 111a and 111b, i.e., the average thickness tda of the first dielectric layer 111a and the average thickness tdb of the second dielectric layer 111b, do not need to be particularly limited.

[0038] However, in order to more easily achieve miniaturization and high capacitance of multilayer electronic components and to improve the voltage withstand characteristics, the average thickness tda of the first dielectric layer 111a may be 1.0 μm or less, and the average thickness tdb of the second dielectric layer 111b may be 1.5 μm or less. That is, the average thickness (tda) of the first dielectric layer 111a can satisfy tda ≤ 1.0 μm, and the average thickness (tdb) of the second dielectric layer 111b can satisfy tdb ≤ 1.5 μm.

[0039] Here, the average thicknesses tda and tdb of the dielectric layers 111a and 111b can refer to the average thicknesses tda and tdb of the dielectric layers 111a and 111b that are placed between the first internal electrode 121 and the second internal electrode 122.

[0040] The average thicknesses tda and tdb of dielectric layers 111a and 111b refer to the average thicknesses tda and tdb of one dielectric layer 111a and 111b, or they can refer to the average thicknesses tda and tdb of multiple dielectric layers 111a and 111b, or they can refer to the average thicknesses tda and tdb of multiple dielectric layers 111a and 111b.

[0041] The average thicknesses tda and tdb of dielectric layers 111a and 111b can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thicknesses tda and tdb of a single dielectric layer 111a and 111b can represent the average value calculated by measuring the thickness of a single dielectric layer at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified by the capacitance forming section Ac. Furthermore, by extending this average value measurement to five identical dielectric layers and measuring the average values, the average thickness of multiple dielectric layers can be further generalized.

[0042] The average thickness tdb of the second dielectric layer 111b is preferably 1 to 2 times the average thickness tda of the first dielectric layer 111a. That is, the condition 1 ≤ tdb / tda ≤ 2 can be satisfied.

[0043] By ensuring that the average thickness tdb of the second dielectric layer 111b is between 1 and 2 times the average thickness tda of the first dielectric layer 111a, it is possible to achieve miniaturization and high capacitance of the multilayer electronic component while maintaining excellent voltage withstand characteristics.

[0044] If the average thickness tdb of the second dielectric layer 111b exceeds twice the average thickness tda of the first dielectric layer 111a, the average thickness of the dielectric layers may become excessively thick, potentially leading to a decrease in dielectric capacitance. If the average thickness tdb of the second dielectric layer 111b is less than one times the average thickness tda of the first dielectric layer 111a, it may become difficult to effectively prevent burnt formation in high-voltage environments.

[0045] The internal electrodes 121 and 122 may be stacked alternately with dielectric layers 111a and 111b, and more specifically, the internal electrodes 121 and 122 may be stacked alternately with at least one of the first dielectric layer 111a and the second dielectric layer 111b.

[0046] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, which are arranged alternately facing each other with the dielectric layers 111a and 111b constituting the main body 110 in between, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0047] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 is positioned on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and the second external electrode 132 is positioned on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0048] In other words, the first internal electrode 121 is not connected to the second external electrode 132 but is connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but is connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically isolated from each other by the dielectric layer 111 placed in between.

[0049] On the other hand, the main body 110 can be formed by alternately laminating a first ceramic green sheet printed with a paste for the first internal electrode, which will become the first internal electrode 121, and a second ceramic green sheet printed with a paste for the second internal electrode, which will become the second internal electrode 122, and then firing them. Screen printing or gravure printing can be used as the printing method for the conductive paste for the internal electrodes, but the present invention is not limited thereto.

[0050] The stacking order of the first dielectric layer 111a, the second dielectric layer 111b, and the internal electrodes 121 and 122 is not particularly limited.

[0051] More specifically, for example, as shown in Figure 2, there may be a configuration in which only one second dielectric layer 111b is interposed; as shown in Figure 3a, there may be a configuration in which the first dielectric layer 111a - first internal electrode 121 - second dielectric layer 111b - second internal electrode 122 are repeatedly stacked; as shown in Figure 3b, there may be a configuration in which only one second dielectric layer 111b is interposed, which is thicker than the average thickness tda of the first dielectric layer 111a; or as shown in Figure 3c, there may be a configuration in which the first internal electrode 121 and the second internal electrode 122 are alternately arranged with the second dielectric layer 111b in between, and then the first internal electrode 121 and the second internal electrode 122 are alternately arranged with the first dielectric layer 111a in between. Although not shown in the drawings, the configuration may also include first internal electrode 121 - first dielectric layer 111a - second dielectric layer 111b - second internal electrode 122, or first internal electrode 121 - second dielectric layer 111b - first dielectric layer 111a - second internal electrode 122.

[0052] The materials forming the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0053] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited, and in the following description of the thickness te of the internal electrodes 121 and 122, it can mean the thickness te of the first internal electrode 121 and the second internal electrode 122, respectively.

[0054] In order to achieve miniaturization and high capacitance of the stacked electronic component 100, the thickness te of the internal electrodes 121 and 122 may be 1.0 μm or less, 0.8 μm or less, or 0.6 μm or less, and in order to achieve ultra-miniaturization, it may be 0.5 μm or less, or 0.4 μm or less.

[0055] In this case, the thickness te of the internal electrodes 121 and 122 may be a concept that includes the thickness te of at least one of the multiple internal electrodes 121 and 122, or it may be a concept that includes the thickness te of all of the internal electrodes 121 and 122.

[0056] In this case, the thickness te of the internal electrodes 121 and 122 may be a concept that includes the thickness te of at least one of the multiple internal electrodes 121 and 122, or it may be a concept that includes the thickness te of each of the internal electrodes 121 and 122.

[0057] Furthermore, the thickness te of the internal electrodes 121 and 122 can mean the average thickness te of one of the internal electrodes 121 and 122, or the average thickness te of each of the multiple internal electrodes 121 and 122, or the average thickness te of the multiple internal electrodes 121 and 122.

[0058] The average thickness te of the internal electrodes 121 and 122 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness te of one internal electrode 121 or 122 may be the average value calculated by measuring the thickness of one internal electrode at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this measurement of average values ​​to three internal electrodes 121 or 122, the average thickness te of multiple internal electrodes 121 or 122 can be further generalized.

[0059] On the other hand, the main body 110 may include cover portions 112 and 113 arranged in the thickness direction of the volume forming portion Ac.

[0060] Specifically, it may include a first cover portion 112 positioned on one surface of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned on the other surface of the volume-forming portion Ac in the thickness direction. More specifically, for example, it may include a first cover portion 112 positioned at the bottom of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned at the top of the volume-forming portion Ac in the thickness direction.

[0061] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single third dielectric layer or two or more third dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0062] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion Ac. That is, the third dielectric layer included in the first cover portion 112 and the second cover portion 113 may contain a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0063] On the other hand, the thickness tc of the cover portions 112 and 113 is not particularly limited, and in the following description of the thickness tc of the cover portions 112 and 113, it can mean the thickness tc of the first cover portion 112 and the second cover portion 113, respectively, and can also mean the thickness tc including both the second dielectric layers 112b and 113b and the third dielectric layers 112a and 113a, which will be described later.

[0064] However, in order to more easily achieve miniaturization and high capacity of the stacked electronic component 100, the thickness tc of the cover portions 112 and 113 may be 100 μm or less or 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0065] Here, the thickness tc of the cover portions 112 and 113 can be said to represent the average thickness of the cover portions 112 and 113.

[0066] Furthermore, the average thickness tc of the cover portions 112 and 113 can refer to the average thickness tc of the first cover portion 112 and the second cover portion 113, respectively, or it can refer to the average thickness tc of the first cover portion 112 and the second cover portion 113.

[0067] The average thickness tc of the cover sections 112 and 113 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the thickness at five equally spaced points in the length direction in an image scanned from one cover section 112 or 113.

[0068] Furthermore, the average thickness tc of the cover portions 112 and 113 measured by the method described above can be substantially the same as the average thickness of the cover portions 112 and 113 in the cross-section in the width and thickness directions of the main body 110.

[0069] On the other hand, the cover portions 112 and 113 may include a second dielectric layer, and more specifically, at least one of the first cover portion 112 and the second cover portion 113 may include a second dielectric layer.

[0070] In other words, at least a portion of the cover parts 112 and 113 is made of a different material from barium titanate (BaTiO3) based dielectric material (α β Γ δ )Ti x O y It can contain substances with (β≧0, δ≧0, x>0, y>0) as its main component.

[0071] In the following, when the cover portions 112 and 113 include a second dielectric layer, for the sake of explanation, the reference numerals in the drawings can be expressed as second dielectric layers 112b and 113b (not shown), which can be interpreted as being identical to the second dielectric layer 111b of the capacitance forming portion Ac, and can be easily understood by an ordinary engineer.

[0072] More specifically, the cover portions 112 and 113 may include at least one of the second dielectric layers 112b and 113b and the third dielectric layers 112a and 113a. In other words, the cover portions 112 and 113 may consist of the third dielectric layers 112a and 113a, or the second dielectric layers 112b and 113b, or a portion of the cover portions 112 and 113 may include the second dielectric layers 112b and 113b and another portion may include the third dielectric layers 112a and 113a.

[0073] In this case, it is preferable that the second dielectric layers 112b and 113b included in the cover portions 112 and 113 are arranged to be in contact with the capacitance forming portion Ac.

[0074] The second dielectric layers 112b and 113b of the cover portions 112 and 113 may not contribute to capacitance formation, but by being positioned in contact with the capacitance-forming portion Ac, they can play a role in preventing burnt or dielectric breakdown due to unintended electric field concentration phenomena in high-voltage environments, and this effect may be even better when they are positioned in contact with the capacitance-forming portion Ac.

[0075] When the cover portions 112 and 113 include both the second dielectric layers 112b and 113b and the third dielectric layers 112a and 113a, the second dielectric layers 112b and 113b can be arranged so as to be in contact with the capacitance forming portion Ac, and the third dielectric layers 112a and 113a can be arranged so as to be in contact with the second dielectric layers 112b and 113b. That is, the second dielectric layers 112b and 113b of the cover portions 112 and 113 can be arranged in the direction inward of the capacitance forming portion Ac with respect to the thickness direction, and the third dielectric layers 112a and 113a can be arranged in the direction outward of the capacitance forming portion Ac with respect to the thickness direction.

[0076] On the other hand, the stacked electronic component 100 may include side margin portions 114 and 115, which are the widthwise edge regions of the internal electrodes 121 and 122.

[0077] More specifically, the side margin portions 114 and 115 may include a first side margin portion 114 positioned between the internal electrodes 121 and 122 and the fifth surface 5, and a second side margin portion 115 positioned between the internal electrodes 121 and 122 and the sixth surface 6.

[0078] As shown in the figure, the side margins 114 and 115 can refer to the region between the boundary surface of the body 110 and both ends in the width direction of the first internal electrode 121 and the second internal electrode 122, with respect to the cross-section in the width and thickness direction of the body 110.

[0079] The side margins 114 and 115 can refer to the ceramic green sheet regions excluding the internal electrodes 121 and 122 when the paste for the internal electrodes is applied to the ceramic green sheet applied to the volume forming section Ac, excluding the areas that will become the side margins 114 and 115.

[0080] However, the invention is not limited to this, and the side margin portions 114 and 115 can be formed by applying conductive paste to the ceramic green sheet applied to the capacitance forming portion Ac, except for the areas where the side margin portions 114 and 115 are formed, to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, the body 110 can be cut so that the laminated internal electrodes 121 and 122 are exposed on the fifth surface 5 and sixth surface 6 of the body 110, and then a single fourth dielectric layer or two or more fourth dielectric layers can be formed by arranging or laminating them in the width direction on both end surfaces (end-surfaces) in the width direction of the capacitance forming portion Ac.

[0081] The side margins 114 and 115 essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0082] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and may contain the same material as the first dielectric layer 111, for example, they may correspond to a part of the first dielectric layer 111. Alternatively, if the first side margin portion 114 and the second side margin portion 115 are formed by arranging or laminating a fourth dielectric layer, the fourth dielectric layer included in the first side margin portion 114 and the second side margin portion 115 may include, for example, a barium titanate (BaTiO3) based dielectric material.

[0083] On the other hand, the widths wm of the side margins 114 and 115 do not need to be particularly limited, and in the following description of the widths wm of the side margins 114 and 115, it is possible to mean the widths wm of the first side margin 114 and the second side margin 115, respectively.

[0084] To more easily achieve miniaturization and increased capacitance of the stacked electronic component 100, the width wm of the side margins 114 and 115 may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0085] Here, the width wm of the side margins 114 and 115 can be said to represent the average width wm of the side margins 114 and 115.

[0086] Furthermore, the average width wm of the side margins 114 and 115 can mean the average width wm of the first side margin 114 and the second side margin 115, respectively, or it can mean the average width wm of the first side margin 114 and the second side margin 115.

[0087] The average width wm of the side margins 114 and 115 can be measured by scanning an image of the cross-section of the main body 110 in the width and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the width at five equally spaced points in the thickness direction in an image scanned from one side margin 114 or 115.

[0088] The following description is applicable only when the first side margin portion 114 and the second side margin portion 115 are formed by arranging or stacking them in the width direction on both end surfaces (end-surfaces) in the width direction of the volume forming portion Ac.

[0089] The side margin portions 114 and 115 may include a second dielectric layer, and more specifically, at least one of the first side margin portion 114 and the second side margin portion 115 may include a second dielectric layer.

[0090] In other words, at least a portion of the side margins 114 and 115 is made of a different material from barium titanate (BaTiO3)-based dielectric material (α β Γ δ)Ti x O y It can contain substances with (β≧0, δ≧0, x>0, y>0) as its main component.

[0091] In the following, when the side margin portions 114 and 115 include a second dielectric layer, for the sake of explanation, the reference numerals in the drawings can be expressed as second dielectric layer 114b and 115b, which means that it is the same as the second dielectric layer 111b of the capacitance forming portion Ac, and this can be easily understood by an ordinary engineer.

[0092] More specifically, the side margin portions 114 and 115 may include at least one of the second dielectric layers 114b, 114b and the fourth dielectric layers 114a and 115a. In other words, the side margin portions 114 and 115 may consist of the fourth dielectric layers 114a and 115a, or the second dielectric layers 114b and 115b, or a portion of the side margin portions 114 and 115 may include the second dielectric layers 114b and 115b and another portion may include the fourth dielectric layers 114a and 115a.

[0093] In this case, it is preferable that the second dielectric layers 114b and 115b included in the side margin portions 114 and 115 be arranged in contact with the capacitance forming portion Ac.

[0094] The second dielectric layers 114b and 115b of the side margin portions 114 and 115 may not contribute to capacitance formation, but by being positioned in contact with the capacitance-forming portion Ac, they can play a role in preventing burnt or dielectric breakdown due to unintended electric field concentration phenomena in high-voltage environments, and this effect may be even better when they are positioned in contact with the capacitance-forming portion Ac.

[0095] When the side margin portions 114 and 115 include both the second dielectric layers 114b and 115b and the fourth dielectric layers 114a and 115a, the second dielectric layers 114b and 115b can be arranged so as to be in contact with the capacitance forming portion Ac, and the fourth dielectric layers 114a and 115a can be arranged so as to be in contact with the second dielectric layers 114b and 115b. That is, the second dielectric layers 114b and 115b of the side margin portions 114 and 115 can be arranged in the direction inward of the capacitance forming portion Ac with respect to the width direction, and the fourth dielectric layers 114a and 115a can be arranged in the direction outward of the capacitance forming portion Ac with respect to the width direction.

[0096] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 or other purposes.

[0097] The external electrodes 131 and 132 are positioned on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0098] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132, which are arranged on the third surface 3 and the fourth surface 4 of the main body 110, respectively, and connected to a first internal electrode 121 and a second internal electrode 122, respectively. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0099] Furthermore, the external electrodes 131 and 132 may extend and be arranged on parts of the first surface 1 and the second surface 2 of the main body 110, or on parts of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body 110 and on parts of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body 110 and on parts of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110.

[0100] The external electrodes 131 and 132 may include connecting portions located on the third surface 3 and fourth surface 4 of the main body 110, and band portions extending from the connecting portions to parts of the first surface 1 and second surface 2 of the main body 110.

[0101] More specifically, the first external electrode 131 may include a first connecting portion located on the third surface 3 of the main body 110, and a first band portion extending from the first connecting portion to a portion of the first surface 1 and the second surface 2, and the second external electrode 132 may include a second connecting portion located on the fourth surface 4 of the main body 110, and a second band portion extending from the second connecting portion to a portion of the first surface 1 and the second surface 2.

[0102] The first band portion may include a 1-1 band portion extending from the first connection portion to a part of the first surface 1, and a 1-2 band portion extending from the first connection portion to a part of the second surface 2. The second band portion may include a 2-1 band portion extending from the second connection portion to a part of the first surface 1, and a 2-2 band portion extending from the second connection portion to a part of the second surface 2.

[0103] In the present invention, unless otherwise contradictory, a description of the band portion can correspond to a description of the first band portion and the second band portion, and further, it can correspond to a description of the 1-1 band portion, the 1-2 band portion, the 2-1 band portion, and the 2-2 band portion, respectively.

[0104] The external electrodes 131 and 132 may be formed using any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc. Furthermore, they may have a multilayer structure.

[0105] For example, the external electrodes 131 and 132 may include first electrode layers 131a and 132a placed on the main body 110, second electrode layers 131b and 132b placed on the first electrode layers 131a and 132a, and further may include third electrode layers 131c and 132c placed on the second electrode layers 131b and 132b.

[0106] Here, it is preferable that the first electrode layers 131a, 132a, the second electrode layers 131b, 132b, and the third electrode layers 131c, 132c correspond to layers that are distinct from each other. However, it is not limited to this, and they may be divided according to the order of the manufacturing process, and at least two of the first electrode layers 131a, 132a, the second electrode layers 131b, 132b, and the third electrode layers 131c, 132c may be observed as a single layer without being distinguished from each other.

[0107] In this invention, "distinguished" can mean, but is not limited to, two layers being distinguishable by physical differences, chemical differences, and / or simple optical differences, however, the distinction between layers can be made by the presence or absence of an "interface." An interface can mean a surface in which two layers in contact with each other are distinguishable from one another, for example, a state in which they are distinguishable by differences in components determined by EDS analysis using equipment such as a scanning electron microscope (SEM).

[0108] The first electrode layers 131a and 132a may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by dipping the main body 110 in a conductive paste for external electrodes containing a conductive metal, but are not limited to these methods.

[0109] As a more specific example for the first electrode layers 131a and 132a, the first electrode layers 131a and 132a may be fired electrodes containing a conductive metal and glass.

[0110] The conductive metal contained in the first electrode layers 131a and 132a can be a material with excellent electrical conductivity. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0111] Furthermore, the glass contained in the first electrode layers 131a and 132a can play a role in improving the bonding with the main body 110.

[0112] The second electrode layers 131b, 132b and the third electrode layers 131c, 132c can play a role in improving mounting characteristics, and may be plated layers formed on the first electrode layers 131a, 132a by a plating method, but are not particularly limited thereto.

[0113] The types of the second electrode layers 131b, 132b and the third electrode layers 131c, 132c are not particularly limited and may include, for example, at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof.

[0114] More specifically, for example, the second electrode layers 131b and 132b may be nickel (Ni) electrode layers and the third electrode layers 131c and 132c may be tin (Sn) electrode layers, or the second electrode layers 131b and 132b may be tin (Sn) electrode layers and the third electrode layers 131c and 132c may be nickel (Ni) electrode layers.

[0115] There is no particular limit to the size of the stacked electronic component 100.

[0116] However, in order to achieve both miniaturization and high capacitance simultaneously, the thickness of the dielectric layer and internal electrodes must be reduced and the number of layers increased. Therefore, the effects of the present invention may be more pronounced in a multilayer electronic component 100 having a size of 1005 (length × width: 1.0 mm × 0.5 mm, where the length and width satisfy an error of ±10%) or less. Furthermore, the width of the multilayer electronic component 100 may be greater than the length.

[0117] The present invention will be described in more detail below with reference to test examples, but this is intended to aid in a concrete understanding of the invention, and the scope of the present invention is not limited by the test examples.

[0118] (Example test) Table 1 below shows the insulation resistance (IR), step-IR, dielectric breakdown voltage (BDV), and dielectric capacitance characteristics of 20 chips fabricated in 1005 size under the conditions of Comparative Examples 1 and 2, and Examples 1 to 4.

[0119] Comparative Examples 1 and 2 were fabricated by repeatedly stacking a first dielectric layer containing barium titanate (BaTiO3) with the internal electrodes, without including a second dielectric layer, resulting in 500 stacked layers. In this case, the average thickness of the first dielectric layer was 1.0 μm.

[0120] Example 1 is a first dielectric layer containing barium titanate (BaTiO3), Ba(Nb 0.02 Al 0.02 )Ti 0.96 The apparatus includes a second dielectric layer containing O3 and internal electrodes. In this case, the second dielectric layer consists of only one layer in the center of the thickness direction of the capacitance forming portion, and the average thickness of the first dielectric layer and the average thickness of the second dielectric layer were both set to 1.0 μm. Except for this, the apparatus was fabricated in the same manner as Comparative Example 1.

[0121] Example 2 is a first dielectric layer containing barium titanate (BaTiO3), Ba(Nb 0.02 Al 0.02 )Ti 0.96The device includes a second dielectric layer containing O3 and internal electrodes. In this case, the layers are stacked in the order of first dielectric layer - first internal electrode - second dielectric layer - second internal electrode, and the second dielectric layer contains 10 layers in the center of the thickness direction of the capacitance forming portion. The average thickness of the first dielectric layer and the average thickness of the second dielectric layer are both 1.0 μm. Except for this, the device was manufactured in the same manner as in Comparative Example 1.

[0122] Example 3 is a first dielectric layer containing barium titanate (BaTiO3), Ba(Nb 0.02 Al 0.02 )Ti 0.96 The apparatus includes a second dielectric layer containing O3 and internal electrodes. In this case, the second dielectric layer consists of only one layer in the center of the thickness direction of the capacitance forming portion, and the average thickness of the first dielectric layer was 1.0 μm, and the average thickness of the second dielectric layer was 1.5 μm. Except for this, the apparatus was fabricated in the same manner as in Comparative Example 1.

[0123] Example 4 is a first dielectric layer containing barium titanate (BaTiO3), Ba(Nb 0.02 Al 0.02 )Ti 0.96 The device includes a second dielectric layer containing O3 and internal electrodes. In this case, the layers are stacked in the order of first dielectric layer - first internal electrode - second dielectric layer - second internal electrode, and the second dielectric layer contains 10 layers in the center of the thickness direction of the capacitance forming portion. The average thickness of the first dielectric layer is 1.0 μm, and the average thickness of the second dielectric layer is 1.5 μm. Except for this, the device was manufactured in the same manner as in Comparative Example 1.

[0124] The insulation resistance (IR) characteristics are recorded by measuring the resistance values ​​of 20 sample chips per test example when a voltage of 6.3V was applied, and then averaging these values.

[0125] Step-IR characteristics were measured by increasing the voltage by 0.13V (corresponding to 0.02Vr) in 3-hour increments at a temperature of 120°C. If a burn occurred, it was evaluated as "Fail," and the stage at which it occurred was also noted. If no burn occurred, it was evaluated as "Pass," and a dash (-) was used for test examples where Step-IR characteristics evaluation was not performed.

[0126] The dielectric breakdown voltage (BDV) characteristic is calculated by measuring the voltage at which a short circuit occurred when a voltage was applied to 20 sample chips, and then averaging these values.

[0127] The dielectric capacitance characteristics are described by measuring the capacitance values ​​obtained when 20 sample chips were subjected to conditions of 1 kHz and 1 V, and then averaging these values.

[0128] [Table 1]

[0129] Examples 1 to 4 exhibit slightly lower insulation resistance (IR) characteristics compared to Comparative Examples 1 and 2. This is thought to be due to the application of a second dielectric layer with low resistivity characteristics.

[0130] Figure 6 shows the Step IR evaluation graphs for Comparative Example 1, Comparative Example 2, and Examples 2 and 4. Figures 7(a) and (b) are images of the burnt generated in Comparative Example 1, taken with an optical microscope (OM) and a scanning electron microscope (SEM), respectively, while Figures 7(c) and (d) are images of the burnt generated in Comparative Example 2, taken with an optical microscope (OM) and a scanning electron microscope (SEM), respectively.

[0131] In Comparative Examples 1 and 2, burnt events occurred at steps 4 and 5, respectively. In contrast, in Examples 2 and 4, no burnt events occurred even when the voltage was increased up to step 5. Therefore, it can be confirmed that Examples 2 and 4, which incorporate a second dielectric layer, exhibit superior reliability even under high-voltage conditions.

[0132] Furthermore, Examples 1 to 4, which applied the second dielectric layer, showed improved dielectric breakdown voltage (BDV) characteristics compared to Comparative Examples 1 and 2, which did not apply the second dielectric layer, confirming that the dielectric properties were also improved.

[0133] Although embodiments and test examples of the present invention have been described in detail above, the present invention is not limited by the embodiments and accompanying drawings described above, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0134] Furthermore, the term "embodiment" as used in this invention does not mean that each "embodiment" is the same as another, but is provided to highlight and describe the unique and distinct features of each. However, the above-presented embodiments do not preclude their realization in combination with features of another embodiment. For example, even if a matter described in one particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description in the other embodiment that contradicts or is contrary to that matter.

[0135] The terms used in this invention are used solely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions may include plural expressions unless the context clearly indicates otherwise. [Explanation of Symbols]

[0136] 100: Stacked Electronic Components 110: Main unit 111a: First dielectric layer 111b, 112b, 113b, 114b, 115b: Second dielectric layer 112, 113: Cover section 114, 115: Side margin section 121, 122: Internal electrode 131, 132: External electrodes

Claims

1. A main body including a first dielectric layer, a second dielectric layer, and internal electrodes, The body includes an external electrode disposed on the main body, The first dielectric layer is BaTiO ３ It contains systemic substances as its main component, The second dielectric layer has a different main component from the first dielectric layer (α β Γ δ ) Ti ｘ O ｙ A multilayer electronic component comprising a substance (β≧0, δ≧0, x>0, y>0) as its main component, wherein α is one of Ba, Er, Ca, and Sr, and Γ is one or more of Nb, Mg, Ta, In, Mn, Hf, Zr, and Al.

2. The above BaTiO ３ series materials are BaTiO ３ , (Ba １－ｘ Ca ｘ )TiO ３ (0 < x < 1), Ba(Ti １－ｙ Ca ｙ )O ３ (0 < y < 1), (Ba １－ｘ Ca ｘ )(Ti １－ｙ Zr ｙ )O ３ (0 < x < 1, 0 < y < 1) and Ba(Ti １－ｙ Zr ｙ )O ３ (0 < y < 1), and the multilayer electronic component according to claim 1 includes at least one of them.

3. The aforementioned (α β Γ δ ) Ti ｘ O ｙ The multilayer electronic component according to claim 1, wherein the total content of the dopant doped into the substance (β≧0, δ≧0, x>0, y>0) is 10 mol% or less based on the elemental site where the dopant is doped.

4. The aforementioned (α β Γ δ ) Ti ｘ O ｙ (β≧0, δ≧0, x>0, y>0) The substance is Ba(Nb,Ti)O ３ , Ba(Nb, Al, Ti)O ３ , Ba(Nb, Ti, Al, Mn)O ３ , Ba(Nb, Hf, Ti)O ３ , (Ba, Sr) (Nb, Ti) O ３ and (Sr, Er)TiO ３ A stacked electronic component according to claim 1, comprising at least one of the following.

5. The aforementioned (α β Γ δ ) Ti ｘ O ｙ (β≧0, δ≧0, x>0, y>0) A substance is Ba(Nb ０．０２ Mg ０．０２ ) Ti ０．９６ O ３ , Ba(Nb ０．０２ Al ０．０２ ) Ti ０．９６ O ３ (Er) ０．０１２ Sr ０．９８８ TiO ３ , (Ta ０．０１ In ０．０１ ) Ti ０．９８ O ２ , Sr(Nb ０．０５ Al ０．０５ ) Ti ０．９０ O ３ A stacked electronic component according to claim 1, comprising at least one of the following.

6. The stacked electronic component according to claim 1, wherein the number of stacked first dielectric layers is greater than the number of stacked second dielectric layers.

7. The stacked electronic component according to claim 1, wherein when the average thickness of the first dielectric layer is tda and the average thickness of the second dielectric layer is tdb, the condition 1 ≤ tdb / tda ≤ 2 is satisfied.

8. The stacked electronic component according to claim 1, wherein the average thickness (tda) of the first dielectric layer satisfies tda ≤ 1.0 μm, and the average thickness (tdb) of the second dielectric layer satisfies tdb ≤ 1.5 μm.

9. The main body includes the first dielectric layer, the second dielectric layer, a capacitance forming portion including internal electrodes arranged alternately in the thickness direction with at least one of the first dielectric layer and the second dielectric layer, and a cover portion arranged in the thickness direction of the capacitance forming portion. The stacked electronic component according to any one of claims 1 to 8, wherein the cover portion includes the second dielectric layer.

10. The stacked electronic component according to claim 9, wherein the second dielectric layer included in the cover portion is arranged to be in contact with the capacitance forming portion.

11. The cover portion is BaTiO ３ It further includes a third dielectric layer containing as the main component, The stacked electronic component according to claim 10, wherein the third dielectric layer is arranged in contact with the second dielectric layer.

12. The main body includes a first dielectric layer, a second dielectric layer, and a capacitance forming section which includes internal electrodes that are alternately arranged in the thickness direction with at least one of the first and second dielectric layers. The stacked electronic component further includes side margin portions arranged in the width direction of the capacitance forming portion, The stacked electronic component according to any one of claims 1 to 8, wherein the side margin portion includes the second dielectric layer.

13. The stacked electronic component according to claim 12, wherein the second dielectric layer included in the side margin portion is arranged to be in contact with the capacitance forming portion.

14. The aforementioned side margin portion is BaTiO ３ It further includes a fourth dielectric layer containing as the main component, The stacked electronic component according to claim 13, wherein the fourth dielectric layer is arranged in contact with the second dielectric layer.

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