Binding assembly, microelectronic package, and binding backplane

Abstract

A binding assembly (10) comprises: a micro electronic device (11); a binding substrate (12); a first embedded electrode (13) arranged on one side of the micro electronic device (11) and electrically connected to the micro electronic device (11); a second embedded electrode (14) arranged on one side of the binding substrate (12) and electrically connected to the binding substrate (12); wherein the first embedded electrode (13) and the second embedded electrode (14) can be embedded with each other so that the micro electronic device (11) can be bound to the binding substrate (12); at least one of the first embedded electrode (13) and the second embedded electrode (14) is a receiving electrode (15), and the other is an insertion electrode (16); the receiving electrode (15) comprises a conductive base (151) and a containing fixing structure (152) arranged on the conductive base (151), the containing fixing structure (152) can be inserted and fixed by the insertion electrode (16). It has the characteristics of simple repair process and low repair cost.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic devices, and in particular to a binding assembly, a micro electronic component and a binding backboard. BACKGROUND

[0002] Micro LED (Micro Light Emitting Diode) display technology is currently widely used in various display devices. A Micro LED display backboard needs to be transferred and bonded with a large number of Micro LED chips. The post-bonding repair technology is a key to mass production. In related technologies, the repair method generally includes the following steps: first, power is supplied to the bonded backboard to find the position of the bad point; then, the chip at the position of the bad point is removed by laser; and finally, a new chip is bonded on the original position or the position of the spare electrode by local heating or overall heating. In this process, the quality of the solder joints of the surrounding already soldered chips is easily affected, and the repair is difficult and costly.

[0003] Therefore, there is an urgent need to provide a new solution to at least partially solve the above problems of the traditional binding process of the Micro LED display backboard. SUMMARY

[0004] Therefore, to overcome at least some of the defects in the prior art, the embodiments of the present application provide a micro electronic component, a binding backboard and a binding assembly, which have the characteristics of simple repair process and low repair cost.

[0005] In one aspect, an embodiment of the present application provides a binding assembly, comprising: a micro electronic device; a binding substrate; a first fitting electrode disposed on one side of the micro electronic device and electrically connected to the micro electronic device; and a second fitting electrode disposed on one side of the binding substrate and electrically connected to the binding substrate; wherein the first fitting electrode and the second fitting electrode can be fitted with each other so that the micro electronic device can be bound to the binding substrate; at least one of the first fitting electrode and the second fitting electrode serves as a receiving electrode, and the other serves as an insertion electrode; the receiving electrode comprises a conductive base and a containing and fixing structure disposed on the conductive base, and the containing and fixing structure can be inserted and fixed with the insertion electrode.

[0006] In one embodiment, the containing and fixing structure comprises a containing cavity or a flexible structure.

[0007] In one embodiment, the containing and fixing structure comprises a plurality of nano pillars, which are arranged at intervals, and the gaps between the plurality of nano pillars form the containing cavity for containing the insertion electrode.

[0008] In one embodiment, the first and second hybrid electrodes are of the same structure, and the gap distance between any two adjacent nanorods in the second hybrid electrode is equal to the width of each nanorod in the first hybrid electrode.

[0009] In one embodiment, the second hybrid electrode and the plurality of nanorods of the first hybrid electrode are made of the same metal material.

[0010] In one embodiment, the receiving and fixing structure comprises a conductive sidewall, a flexible structure, and a conductive sheet; the conductive sidewall encloses a filling cavity on the conductive substrate and is electrically connected to the conductive substrate; the flexible structure fills the filling cavity; and the conductive sheet covers the side of the receiving and fixing structure away from the conductive substrate, and is electrically connected to the conductive sidewall.

[0011] In one embodiment, the insertion electrode comprises a solder layer and a conductive spike disposed on one side of the solder layer, the conductive spike can penetrate the conductive sheet and pierce into the flexible structure to electrically connect the insertion electrode to the receiving electrode through the conductive sheet.

[0012] In one embodiment, the conductive substrate, the conductive sidewall, and the conductive sheet are made of the same metal material.

[0013] In one embodiment, the thickness of the conductive sheet is less than 1 micrometer.

[0014] In another aspect, one embodiment of the present application provides a micro electronic component, comprising: a micro electronic device;

[0015] a receiving electrode electrically connected to the micro electronic device, the receiving electrode having a conductive substrate and a receiving and fixing structure disposed on the conductive substrate, the receiving and fixing structure being capable of being inserted and fixed by an insertion electrode on a binding substrate; so that the micro electronic device can be bound to the binding substrate.

[0016] In one embodiment, the receiving and fixing structure comprises a conductive sidewall, a flexible structure, and a conductive sheet; the conductive sidewall encloses a filling cavity on the conductive substrate and is electrically connected to the conductive substrate; the flexible structure fills the filling cavity; and the conductive sheet covers the side of the receiving and fixing structure away from the conductive substrate, and is electrically connected to the conductive sidewall.

[0017] In one embodiment, the accommodating fixing structure further includes a plurality of nanopillars disposed on the side of the conductive substrate away from the microelectronic device; the plurality of nanopillars are spaced apart from each other, and the gaps between the plurality of nanopillars form an accommodating cavity for accommodating the inserted electrode.

[0018] Another embodiment of the present invention provides a bonding backplane, comprising: a bonding substrate; a receiving electrode electrically connected to the microelectronic device, the receiving electrode having a conductive substrate and a receiving and fixing structure disposed on the conductive substrate, the receiving and fixing structure being inserted into and fixed by an insertion electrode on the microelectronic device, so that the microelectronic device can be bonded to the bonding substrate.

[0019] In one embodiment, the accommodating fixing structure includes a conductive sidewall, a flexible structure, and a conductive sheet; the conductive sidewall surrounds a filling cavity on the conductive substrate and is electrically connected to the conductive substrate; the flexible structure fills the filling cavity; the conductive sheet covers the side of the accommodating fixing structure away from the conductive substrate, and the conductive sheet is electrically connected to the conductive sidewall.

[0020] In one embodiment, the receiving electrode further includes: a plurality of nanopillars disposed on the side of the conductive substrate away from the microelectronic device; the plurality of nanopillars are spaced apart from each other, and the gaps between the plurality of nanopillars form the accommodating cavity for accommodating the insertion electrode.

[0021] The above embodiments of the present invention have at least one or more of the following beneficial effects: by providing a receiving electrode with a accommodating and fixing structure on the microelectronic device or bonding substrate, the receiving electrode and the insertion electrical connector can be interlocked, and the microelectronic device and the bonding substrate can be bonded without heating and welding. After repair, full-surface heating and welding or wireless heating and welding can be performed, which can reduce the adverse effects on surrounding devices during the repair process.

[0022] Other aspects and features of the invention will become apparent from the following detailed description with reference to the accompanying drawings. However, it should be understood that the drawings are for illustrative purposes only and are not intended to limit the scope of the invention. It should also be understood that, unless otherwise indicated, the drawings are not necessarily drawn to scale; they are merely intended to conceptually illustrate the structures and processes described herein. Attached Figure Description

[0023] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0024] Figure 1 This is a schematic diagram of the binding component provided in the first embodiment of the present invention.

[0025] Figure 2 A structural schematic diagram of another embodiment of the binding assembly shown in FIG. 1. Figure 1

[0026] Figure 3 A structural schematic diagram of another embodiment of the binding assembly shown in FIG. 1. Figure 2

[0027] Figure 4 A flowchart of the repair method of the binding assembly shown in FIG. 1. Figure 2

[0028] A structural schematic diagram of the binding assembly provided for the second embodiment of the present application. Figure 5

[0029] Figure 6 A structural schematic diagram of another embodiment of the binding assembly shown in FIG. 1. Figure 5

[0030] Figure 7 A flowchart of the repair method of the binding assembly shown in FIG. 1. Figure 6

[0031] A structural schematic diagram of the micro electronic component provided for the third embodiment of the present application. Figure 8

[0032] A structural schematic diagram of the micro electronic component provided for the fourth embodiment of the present application. Figure 9

[0033] A structural schematic diagram of the binding backboard provided for the fifth embodiment of the present application. Figure 10

[0034] A structural schematic diagram of the binding backboard provided for the sixth embodiment of the present application. Figure 11

BRIEF DESCRIPTION OF THE DRAWINGS

[0035] 10: binding assembly; 11: micro electronic device; 12: binding substrate; 13: first embedded electrode; 14: second embedded electrode; 15: receiving electrode; 151: conductive base; 152: accommodation fixing structure; 1521: conductive sidewall; 1522: flexible structure; 1523: conductive sheet; 1524: nanocolumn; 1525: accommodation cavity; 1526: filling cavity; 16: insertion electrode; 161: solder layer; 162: conductive spike; 20: micro electronic component; 30: binding backboard.

[0036] DETAILED DESCRIPTION

[0037] In order to make the above objectives, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. ​​​​​

[0038] In order for those skilled in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should fall within the scope of protection of the present application.

[0039] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above-described drawings are used to distinguish similar objects, and do not necessarily have to describe a specific order or sequence. It should be understood that the terms thus used can be interchanged under appropriate circumstances, so that the embodiments of the application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0040] It should also be noted that the division of the plurality of embodiments in the present application is only for the convenience of description, and should not constitute a special limitation. The features in various embodiments can be combined with each other and mutually quoted without contradiction.

[0041] In the related art, the binding of Micro LED mainly has two kinds, one is to set an adhesive layer on the driving circuit board, transfer the Micro LED to the adhesive layer, and make the adhesive material adhere to the Micro LED by heating the adhesive layer to realize the binding connection of the Micro LED and the driving circuit board. The other is to set a welding electrode on the driving circuit board, and to make the electrode of the Micro LED and the electrode on the circuit board welded together by heating welding. Both of these two binding methods have some defects in the binding repair process of the Micro LED. For example, in the method of using adhesive, since the adhesion of the adhesive layer fails after the first transfer, the failed adhesive layer on the standby electrode position needs to be removed before transferring a new chip to the standby electrode position, and new adhesive material needs to be supplemented. Since the size of the Micro LED is in microns, it is difficult to remove and supplement the adhesive material at a single point. As for the heating welding scheme, the entire panel needs to be heated and welded during the first transfer, and the repair point needs to be heated for the second time when a new chip is bound during repair. The thermal effect during heating and welding may affect the adjacent point, causing the welding point to melt, affecting the welding quality. Therefore, the present embodiment provides a new binding scheme to solve at least part of the above defects.

[0042] A first embodiment

[0043] As Figure 1 shown, the first embodiment of the present application provides a binding assembly 10, which includes a micro electronic device 11, a binding substrate 12, and a first fitting electrode 13 arranged on one side of the micro electronic device 11 and electrically connected to the micro electronic device 11, and a second fitting electrode 14 arranged on one side of the binding substrate 12 and electrically connected to the binding substrate 12. Wherein the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the micro electronic device 11 can be bound to the binding substrate 12. At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as a receiving electrode 15, and the other serves as an insertion electrode 16. The receiving electrode 15 includes a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151, and the receiving and fixing structure 152 can be inserted and fixed by the insertion electrode 16. Wherein the micro electronic device 11 is, for example, a micro light emitting device, specifically, for example, a Micro LED chip, which is a flip-chip Micro LED chip as shown in Figure 1 , which has a P-type semiconductor layer and an N-type semiconductor layer, and one first fitting electrode 13 is arranged on each of the P-type semiconductor layer and the N-type semiconductor layer. The corresponding binding substrate 12 is, for example, a Micro LED driving circuit board, and two second fitting electrodes 14 are arranged on the binding substrate 12 corresponding to one Micro LED chip position. The binding substrate 12 is provided with a plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips. Of course, Figure 1 only the structure of the micro electronic device 11 being a flip-chip Micro LED chip is shown in , the micro electronic device 11 may, for example, also be a vertical Micro LED chip, and for example, the first fitting electrode 13 is arranged on the P-type semiconductor layer of the vertical Micro LED chip, and one second fitting electrode 14 is arranged on the binding substrate 12 corresponding to one Micro LED binding position. Referring to Figure 2 , for example, the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15, and the first fitting electrode 13 on the micro electronic device 11 serves as the insertion electrode 16. Conversely, in some embodiments, referring to Figure 3The first interlocking electrode 13 on the microelectronic device 11 shown can serve as a receiving electrode 15, while the second interlocking electrode 14 on the substrate 12 can serve as an insertion electrode 16. Alternatively, the first interlocking electrode 13 and the second interlocking electrode 14 can be inserted into each other, which can be understood as both serving as receiving electrodes 15. It can also be understood that the first interlocking electrode 13 and the second interlocking electrode 14 each have a conductive substrate 151 and a receiving and fixing structure 152 disposed on the conductive substrate 151. The receiving and fixing structure 152 on the first interlocking electrode 13 can be inserted into and fixed by the second interlocking electrode 14, and the receiving and fixing structure 152 on the second interlocking electrode 14 can be inserted into and fixed by the first interlocking electrode 13. The receiving and fixing structure 152 includes a receiving cavity 1525 or a flexible structure 1522. For example, see [reference needed]. Figure 2 and Figure 3 The accommodating and fixing structure 152 includes a conductive sidewall 1521, a flexible structure 1522, and a conductive sheet 1523. The first conductive sidewall 1521 surrounds a filling cavity 1526 on the first conductive substrate 151 and is electrically connected to the conductive substrate 151. The flexible structure 1522 fills the filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating and fixing structure 152 away from the conductive substrate 151, and the conductive sheet 1523 is electrically connected to the conductive sidewall 1521. The conductive substrate 151, conductive sidewall 1521, and conductive sheet 1523 are all made of metallic materials. The material of the conductive substrate 151 can be, for example, the pad material used in conventional drive bonding backplanes, such as one or a combination of metals like copper, nickel, gold, and silver, with a thickness ranging from approximately 1 to 2 micrometers. The conductive substrate 151, conductive sidewall 1521, and conductive sheet 1523 can be made of the same or different metal materials. When they are made of the same metal material, their coefficients of thermal expansion are consistent, resulting in better bonding. The flexible structure 1522 can be made of soft materials such as silicone, resin, or photoresist, and its hardness is, for example, 40–80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is approximately 1–2 micrometers, while the thickness of the conductive sheet 1523 is less than 1 micrometer, for example, between 300 and 500 nanometers. The thinner thickness makes it easier for the insertion electrode 16 to be inserted and electrically connected. In one embodiment, the insertion electrode 16 may include a solder layer 161 and conductive spikes 162 disposed on one side of the solder layer 161. The conductive spikes 162 can penetrate the conductive sheet 1523 and pierce into the flexible structure 1522, so as to electrically connect the insertion electrode 16 and the receiving electrode 15 through the conductive sheet 1523. The conductive spikes 162 have a diameter of less than 1 micrometer, for example, between 500 nanometers and 1 micrometer, and a height of, for example, between 1 and 2 micrometers, allowing the conductive spikes 162 to better penetrate the conductive sheet 1523. The solder layer 161 can be made of conventional solder metals such as tin, nickel, copper, indium, bismuth, or their alloys. For example... Figure 2The first chimeric electrode 13 shown as the insertion electrode 16 (i.e. as the insertion electrode 16 provided on the micro electronic device 11) has a solder layer 161 provided on the P electrode and the N electrode of the Micro LED, for example. Figure 3 The second chimeric electrode 14 shown as the insertion electrode 16 (i.e. as the insertion electrode 16 provided on the binding substrate 12) has a solder layer 161 provided on the pad layer of the binding substrate 12, for example.

[0044] The preparation process of the receiving electrode 15 provided by the embodiment can include the following steps, for example: providing the binding substrate 12 (or the micro electronic device 11), reserving at least one or more standby electrode positions on the binding substrate 12 in addition to the conventional electrode positions; forming a conductive base corresponding to each electrode position; forming a conductive side wall on the side of the conductive base away from the binding substrate 12 (or the micro electronic device 11) to enclose a filling cavity on each conductive base; coating a flexible material layer (such as a silicone layer) on the side of the binding substrate 12 (or the micro electronic device 11) adjacent to the conductive base by means of spin coating or the like; etching the unnecessary part of the flexible material layer (i.e. the part other than the filling cavities); and forming a conductive sheet on the side of the flexible material layer away from the binding substrate 12. The formation process of the conductive base, the conductive side wall and the conductive sheet can be performed by means of evaporation, for example, and the growth can be performed only at the positions where growth is needed by means of a mask process. The step of removing the excess flexible material can also be performed after the formation of the conductive sheet.

[0045] Referring to Figure 4 , which is Figure 2 The flowchart of the repair method of the binding assembly 10 is shown. Only two groups of the second chimeric electrode 14 on the binding substrate 12 are shown in the figure, one of which is a standby electrode, but the embodiment is not limited thereto. In the embodiment, the first chimeric electrode 13 provided on the micro electronic device 11 is used as the insertion electrode 16, and the second chimeric electrode 14 provided on the binding substrate 12 is used as the receiving electrode 15. Figure 4 In step (a) of the embodiment, the micro electronic device 11 and the binding substrate 12 in the binding assembly 10 are provided respectively, the first chimeric electrode 13 provided on the micro electronic device 11 is used as the insertion electrode 16, and the second chimeric electrode 14 provided on the binding substrate 12 is used as the receiving electrode 15. The micro electronic device 11 is bound to the group of electrodes on the left side of the binding substrate 12, and the conductive spike 162 on the insertion electrode 16 is made to pierce the conductive sheet 1523 on the receiving electrode 15 and penetrate into the flexible structure 1522 by pressing the micro electronic device 11 downward, thereby obtaining Figure 4The structure after the first bonding shown in step (b), at this time the conductive spikes 162 on the insertion electrodes 16 are clamped and fixed by the conductive sheet 1523 and the flexible structure 1522, and the conductive spikes 162 and the pad layer 161 are in contact with the conductive sheet 1523 to achieve electrical connection. After the first transfer is completed, the bonding substrate 12 is powered on to drive the micro electronic device 11, and if the micro electronic device 11 emits light, the bonding is normal. If the micro electronic device 11 does not emit light, the bonding is abnormal and needs to be repaired. In step (c), the micro electronic device 11 with the first bonding abnormality is removed. In Figure 4 Before step (c), the right group of receiving electrodes 15 (i.e. spare electrodes) does not undergo the bonding process, and in step (d), a new micro electronic device 11 can be transferred to the position of the spare electrode group. The conductive spikes 162 on the insertion electrodes 16 of the new micro electronic device 11 pierce the conductive sheet 1523 on the receiving electrode 15 and penetrate into the flexible structure 1522, obtaining Figure 4 The structure after repair shown in step (d), at this time the conductive spikes 162 on the insertion electrodes 16 are clamped and fixed by the conductive sheet 1523 and the flexible structure 1522, and the conductive spikes 162 and the pad layer 161 are in contact with the conductive sheet 1523 to achieve electrical connection. The bonding of the spare electrode can be checked again, if the bonding is abnormal, the above repair steps can be continued, if the bonding is normal, the bonding substrate 12 can be heated as a whole to melt the pad layer 161 to achieve welding of all micro electronic devices 11 and the bonding substrate 12 on the entire panel. In this way, during the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating and welding in the related art, which will not affect the quality of the surrounding welds. And only the Micro LED at the bad point position needs to be removed during the repair process, without the need for the removal of the adhesive layer and the supplement of the adhesive material in the related art, and the repair process is more simple and feasible.

[0046]

Second Embodiment

[0047] Referring to Figure 5The second embodiment of the present application provides another binding assembly 10, which comprises a micro electronic device 11, a binding substrate 12, and a first embedded electrode 13 arranged on one side of the micro electronic device 11 and electrically connected to the micro electronic device 11, and a second embedded electrode 14 arranged on one side of the binding substrate 12 and electrically connected to the binding substrate 12. Wherein, the first embedded electrode 13 and the second embedded electrode 14 can be embedded with each other so that the micro electronic device 11 can be bound to the binding substrate 12. At least one of the first embedded electrode 13 and the second embedded electrode 14 is a receiving electrode 15, and the other is an insertion electrode 16. The receiving electrode 15 comprises a conductive base 151 and a containing fixing structure 152 arranged on the conductive base 151, and the containing fixing structure 152 can be inserted and fixed by the insertion electrode 16. Wherein, the micro electronic device 11 is, for example, a micro light emitting device, and specifically, for example, a Micro LED chip, such as Figure 5 The inverted Micro LED chip shown in the above is provided with a P-type semiconductor layer and an N-type semiconductor layer, and each of the P-type semiconductor layer and the N-type semiconductor layer is provided with a first embedded electrode 13. The corresponding binding substrate 12 is, for example, a Micro LED driving circuit board, and two second embedded electrodes 14 are arranged on the binding substrate 12 corresponding to a position of a Micro LED chip. The binding substrate 12 is provided with a plurality of second embedded electrodes 14 which can bind a plurality of Micro LED chips. Of course, Figure 5 The structure of the micro electronic device 11 being the inverted Micro LED chip is only shown in the above, and the micro electronic device 11 may, for example, also be a vertical Micro LED chip, and for example, a first embedded electrode 13 is arranged on the P-type semiconductor of the vertical Micro LED chip, and a second embedded electrode 14 is arranged on the binding substrate 12 corresponding to a position of a Micro LED chip. Wherein, for example, the second embedded electrode 14 on the binding substrate 12 is a receiving electrode 15, and the first embedded electrode 13 on the micro electronic device 11 is an insertion electrode 16. Conversely, in some embodiments, the first embedded electrode 13 on the micro electronic device 11 is a receiving electrode 15, and the second embedded electrode 14 on the binding substrate 12 is an insertion electrode 16. Or as Figure 6As shown in the structure of the binding assembly 10, the first embedded electrode 13 and the second embedded electrode 14 can be inserted into each other, and it can be understood that both of them are the receiving electrode 15, or it can be understood that the first embedded electrode 13 and the second embedded electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151, the receiving and fixing structure 152 on the first embedded electrode 13 can be inserted and fixed with the second embedded electrode 14, and the receiving and fixing structure 152 on the second embedded electrode 14 can be inserted and fixed with the first embedded electrode 13. The receiving and fixing structure 152 includes a receiving cavity 1525 or a flexible structure 1522.

[0048] In this embodiment, the receiving and fixing structure 152 includes a plurality of nanometer columns 1524, which are arranged at intervals, and the gap between the plurality of nanometer columns 1524 forms a receiving cavity 1525 for inserting the electrode 16. Among the plurality of nanometer columns 1524, the height of each nanometer column 1524 is, for example, 2-3 microns (the overall thickness of the receiving electrode 15 is 3-4 microns), and the width (or diameter) of each nanometer column 1524 is, for example, between 200-500 nanometers, and the gap between the adjacent two nanometer columns 1524 is substantially equal to the width of each nanometer column 1524, that is, the gap between the adjacent two nanometer columns 1524 is about 200-500 nanometers. In some embodiments, the structures of the first embedded electrode 13 and the second embedded electrode 14 are the same, and the gap distance between the adjacent two nanometer columns in the first embedded electrode 13 is equal to the width of each nanometer column 1524 on the second embedded electrode 14. The gap distance between the adjacent two nanometer columns in the second embedded electrode 14 is equal to the width of each nanometer column 1524 on the first embedded electrode 13. So that the plurality of nanometer columns 1524 of the first embedded electrode 13 and the second embedded electrode 14 can be in contact with each other and fixed. Specifically, the plurality of nanometer columns 1524 are, for example, of metal material, and specifically can be, for example, copper, nickel metal, etc. The metal material has better ductility, so that the first embedded electrode 13 and the second embedded electrode 14 can slightly deform during mutual insertion to better combine without being easily damaged. More specifically, the plurality of nanometer columns 1524 on the first embedded electrode 13 and the second embedded electrode 14 are, for example, of the same metal. Or the nanometer columns 1524 of one of the first embedded electrode 13 and the second embedded electrode 14 are of a weldable material such as tin, nickel, copper, indium, bismuth or an alloy thereof, and the nanometer columns 1524 of the other are of a metal such as copper or nickel that can be inter-melted with the weldable material, so that the first embedded electrode 13 and the second embedded electrode 14 can be heated and welded.

[0049] In the embodiment, the preparation process of the receiving electrode 15 can include the following steps: providing the binding substrate 12 (or the micro electronic device 11), reserving at least one spare electrode position on the binding substrate 12 except for the conventional electrode positions; forming a conductive base corresponding to each electrode position; and forming a plurality of nano pillars on the side of the conductive base away from the binding substrate 12 (or the micro electronic device 11). The conductive base and the plurality of nano pillars can be formed by evaporation or chemical plating. Alternatively, in some embodiments, a whole metal block can be formed on each electrode position by using metal, and then a plurality of nano pillars can be formed on the metal block by etching or other processes. The above formation processes are only illustrative, and the embodiment is not limited thereto.

[0050] As shown in FIG. 1, the binding assembly 10 is a binding assembly for repairing the binding assembly 10 shown in FIG. 2. Figure 7 As shown in FIG. 1, the binding assembly 10 is a binding assembly for repairing the binding assembly 10 shown in FIG. 2. Figure 6 As shown in FIG. 1, the binding assembly 10 is a binding assembly for repairing the binding assembly 10 shown in FIG. 2. Figure 7 In step (a), the micro electronic device 11 and the binding substrate 12 in the binding assembly 10 are provided respectively, the first embedded electrode 13 provided on the micro electronic device 11 and the second embedded electrode 14 on the binding substrate 12 both have a receiving structure 152, that is, the first embedded electrode 13 and the second embedded electrode 14 are a receiving electrode 15 and an insertion electrode 16. In step (a), the micro electronic device 11 is bound to the left group of electrodes on the binding substrate 12, and the plurality of nano pillars 1524 of the first embedded electrode 13 and the second embedded electrode 14 are inserted into each other by pressing the micro electronic device 11, as shown in FIG. 3. Figure 7 As shown in FIG. 1, the binding assembly 10 is a binding assembly for repairing the binding assembly 10 shown in FIG. 2. Figure 7 In step (c), the micro electronic device 11 of the first binding failure is removed. Before step (c), the right group of spare electrodes has not been bound, and in step (d), a new micro electronic device 11 can be transferred to the spare electrode position, so that the first embedded electrode 13 of the new micro electronic device 11 is inserted into the second embedded electrode 14 on the spare electrode position, as shown in FIG. 5. Figure 8The repaired structure is shown in step (d). The binding of the spare electrode position can be checked again, and if the binding is abnormal, the above repair steps can be continued. If the binding is normal, the "spike" shape of the nanorod 1524 can already make the micro electronic device 11 and the binding substrate 12 stably combined, so that the binding is completed without heating and welding, and the effect of heating and welding can be reduced. Of course, if necessary, the nanorod 1524 of one of the first embedded electrode 13 and the second embedded electrode 14 can be selected as a welding material, and the nanorod 1524 of the other can be a metal material that can be inter-melted with the welding material, so that the entire micro electronic device 11 on the entire binding substrate 12 can be integrally heated and welded after the last transfer. In this way, heating and welding can only be performed after the last transfer in the entire transfer and repair process, without the need for single-point heating and welding in the related art, which will not affect the quality of the surrounding welding points. Moreover, only the Micro LED at the bad point position needs to be removed in the repair process, without the need for the removal of the adhesive layer and the supplement of the adhesive material in the related art, and the repair process is simpler and more feasible.

[0051]

Third Embodiment

[0052] As shown in Figure 8 , the third embodiment of the present application provides a micro electronic component 20, which includes a micro electronic device 11 and a receiving electrode 15. The receiving electrode 15 is electrically connected to the micro electronic device 11. The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 disposed on the conductive base 151, and the receiving and fixing structure 152 can be inserted and fixed by an insertion electrode on a binding substrate, so that the micro electronic device 11 can be bound to the binding substrate.

[0053] Among them, the micro electronic device 11 is, for example, a micro light emitting device, specifically, for example, a Micro LED chip, as shown in Figure 8 , which is a flip-chip Micro LED chip, has a P-type semiconductor layer and an N-type semiconductor layer, and each of the P-type semiconductor layer and the N-type semiconductor layer is provided with a receiving electrode 15. Among them, the conductive base 151 is, for example, a P electrode or an N electrode of a conventional Micro LED chip, and the thickness ranges from about 1 to 2 microns. Of course, Figure 8 , only the structure of the micro electronic device 11 as a flip-chip Micro LED chip is shown, and the micro electronic device 11 may, for example, also be a vertical Micro LED chip, and the receiving electrode 15 is provided on the P-type semiconductor layer of the vertical Micro LED chip. Among them, the receiving and fixing structure 152 includes a receiving cavity 1525 or a flexible structure 1522. For example, refer to Figure 9The accommodation fixing structure 152 includes a conductive side wall 1521, a flexible structure 1522, and a conductive sheet 1523. The first conductive side wall 1521 is formed on the first conductive substrate 151 to enclose a filling cavity 1526, and is electrically connected to the conductive substrate 151. The flexible structure 1522 is filled in the filling cavity 1526. The conductive sheet 1523 is covered on the side of the accommodation fixing structure 152 away from the conductive substrate 151, and the conductive sheet 1523 is electrically connected to the conductive side wall 1521. The conductive substrate 151, the conductive side wall 1521, and the conductive sheet 1523 are all metal materials, for example, one or a combination of copper, nickel, gold, silver, and the like. The conductive substrate 151, the conductive side wall 1521, and the conductive sheet 1523 can be the same metal material or different metal materials. When they are the same metal material, the thermal expansion coefficients are consistent, and the binding effect is better. The flexible structure 1522 can be, for example, a soft material such as silicone, resin, or photoresist, and the hardness of the flexible structure 1522 is, for example, 40-80 HA (Shore A hardness). The thickness of the conductive side wall 1521 and the flexible structure 1522 is about 1-2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300-500 nanometers. The thinner thickness makes it easy to be inserted and electrically connected by the insertion electrode on the binding substrate. The insertion electrode on the binding substrate is arranged in a sharp spike shape, which is combined more simply. The micro electronic component 20 provided in the embodiment can realize the repair method similar to the first embodiment described above. In the entire transfer repair process, only the last transfer can be heated and welded, and the single-point heating and welding in the related art does not need to be performed, which does not affect the quality of the surrounding welding points. In the repair process, only the Micro LED at the bad point position needs to be removed, and the removal of the adhesive layer and the supplement of the adhesive material in the related art do not need to be performed, and the repair process is more simple and feasible.

[0054]

Fourth Embodiment

[0055] As shown in Figure 9 , the fourth embodiment of the present application provides a micro electronic component 20 including a micro electronic device 11 and a receiving electrode 15. The receiving electrode 15 is electrically connected to the micro electronic device 11. The receiving electrode 15 has a conductive substrate 151 and an accommodation fixing structure 152 arranged on the conductive substrate 151. The accommodation fixing structure 152 can be inserted and fixed by an insertion electrode on a binding substrate, so that the micro electronic device 11 can be bound to the binding substrate.

[0056] The micro electronic device 11 is, for example, a micro light emitting device, specifically, for example, a Micro LED chip, as shown in Figure 9The flip-chip Micro LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and each of the P-type semiconductor layer and the N-type semiconductor layer is provided with a receiving electrode 15. The conductive base 151 is, for example, a P electrode or an N electrode of a conventional Micro LED chip, and the thickness is about 1-2 microns. Of course, Figure 9 In the embodiment, only the structure in which the micro electronic device 11 is a flip-chip Micro LED chip is shown, and the micro electronic device 11 may, for example, also be a vertical Micro LED chip, and the receiving electrode 15 is provided on the P-type semiconductor layer of the vertical Micro LED chip.

[0057] Referring to Figure 10 In the embodiment, the accommodation fixing structure 152 includes a plurality of nanometer pillars 1524, which are arranged on the side of the conductive base 151 away from the micro electronic device 11. The plurality of nanometer pillars 1524 are arranged at intervals, and the gaps between the plurality of nanometer pillars 1524 form accommodation cavities 1525 for accommodating the insertion electrodes on the binding substrate. Among the plurality of nanometer pillars 1524, the height of each nanometer pillar 1524 is, for example, 2-3 microns (the overall thickness of the receiving electrode 15 is 3-4 microns), and the width (or diameter) of each nanometer pillar 1524 is, for example, between 200-500 nanometers. The gap between the adjacent two nanometer pillars 1524 is substantially equal to the width of each nanometer pillar 1524, that is, the gap between the adjacent two nanometer pillars 1524 is about 200-500 nanometers. Specifically, the plurality of nanometer pillars 1524 are, for example, metal materials, and specifically can be copper, nickel, and the like. The metal material has good ductility, and can slightly deform during the binding process to better combine and not be easily damaged. The micro electronic component 20 provided in the embodiment has the structure of the plurality of nanometer pillars 1524, which can be matched with the insertion electrodes on the binding substrate to have the same structure as the receiving electrode 15 in the embodiment, and can be stably bound by the mutual penetration between the nanometer pillars, realizing the repair scheme similar to the second embodiment. The plurality of nanometer pillars 1524 of the accommodation fixing structure 152 in the embodiment can be copper, nickel, or other metal materials, or solderable materials such as tin, nickel, copper, indium, bismuth, or alloys thereof. The insertion electrodes on the binding substrate can be matched to realize soldering binding without heating or soldering binding with heating, and the actual needs are set, which is not limited in the embodiment. By using the structure of the micro electronic component 20 provided in the embodiment, the heating soldering can be performed only after the last transfer in the entire transfer repair process, or the soldering is not required, and the single-point heating soldering in the related art is not required, which does not affect the quality of the surrounding soldering points. Moreover, only the Micro LED at the bad point position needs to be removed in the repair process, and the process of removing the adhesive layer and supplementing the adhesive material in the related art is not required, and the repair process is more simple and feasible.

[0058] [Fifth Embodiment]

[0059] like Figure 10 As shown, a fifth embodiment of the present invention provides a bonding backplane 30, which includes a bonding substrate 12 and a receiving electrode 15. The receiving electrode 15 is electrically connected to a microelectronic device 11. The receiving electrode 15 has a conductive substrate 151 and a receiving and fixing structure 152 disposed on the conductive substrate 151. The receiving and fixing structure 152 can be inserted into and fixed to an insertion electrode 16 on a microelectronic device, so that the microelectronic device can be bonded to the bonding substrate 12.

[0060] The bonding substrate 12 is, for example, a Micro LED driver circuit board. When used for bonding flip-chip Micro LEDs, two receiving electrodes 15 are provided on the bonding substrate 12 corresponding to each Micro LED chip position. The bonding substrate 12 has multiple receiving electrodes 15 capable of bonding multiple Micro LED chips. When used for bonding vertical Micro LED chips, one receiving electrode 15 is provided on the bonding substrate 12 corresponding to each Micro LED bonding position. Figure 10 The diagram shows only two sets of receiving electrode 15 on the bonding substrate 12 for bonding two Micro LEDs, one set serving as a spare electrode for the other. The conductive substrate 151 can be, for example, a bonding pad material found on Micro LED driver circuit boards, such as one or a combination of metals like copper, nickel, gold, and silver, with a thickness ranging from approximately 1 to 2 micrometers. The accommodating and fixing structure 152 includes an accommodating cavity 1525 or a flexible structure 1522. For example, see [reference needed]. Figure 11The accommodating fixing structure 152 includes a conductive side wall 1521, a flexible structure 1522, and a conductive sheet 1523. The first conductive side wall 1521 is formed on the first conductive base 151 to enclose a filling cavity 1526, and is electrically connected to the conductive base 151. The flexible structure 1522 is filled in the filling cavity 1526. The conductive sheet 1523 is arranged on the side of the accommodating fixing structure 152 away from the conductive base 151, and the conductive sheet 1523 is electrically connected to the conductive side wall 1521. The conductive base 151, the conductive side wall 1521, and the conductive sheet 1523 are all metal materials, such as one or a combination of copper, nickel, gold, silver, and the like. The conductive base 151, the conductive side wall 1521, and the conductive sheet 1523 can be the same metal material or different metal materials. When they are the same metal material, the thermal expansion coefficients are consistent, and the binding effect is better. The flexible structure 1522 can be a soft material such as silicone, resin, or photoresist, and the hardness of the flexible structure 1522 is, for example, 40-80 HA (Shore A hardness). The thickness of the conductive side wall 1521 and the flexible structure 1522 is about 1-2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300-500 nanometers. The thinner thickness makes it easy to be inserted and electrically connected by the insertion electrode on the micro electronic device. The insertion electrode on the micro electronic device is arranged in a sharp shape, which is combined more simply. The binding backplane 30 provided in the embodiment can realize the repair method similar to the first embodiment described above. In the whole transfer repair process, only the last transfer can be heated and welded, and the single-point heating and welding in the related art does not need to be performed, which does not affect the quality of the surrounding welding points. In the repair process, only the Micro LED at the bad point position needs to be removed, and the removal of the adhesive layer and the supplement of the adhesive material in the related art do not need to be performed, and the repair process is more simple and feasible.

[0061]

Sixth Embodiment

[0062] As shown in Figure 11 , the sixth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15. The receiving electrode 15 is electrically connected to a micro electronic device 11. The receiving electrode 15 has a conductive base 151 and an accommodating fixing structure 152 arranged on the conductive base 151. The accommodating fixing structure 152 can be inserted and fixed by the insertion electrode 16 on the micro electronic device, so that the micro electronic device can be bound to the binding substrate 12.

[0063] The binding substrate 12 is, for example, a Micro LED driving circuit board, for example, for binding flip-chip Micro LED, the binding substrate 12 is provided with two receiving electrodes 15 corresponding to a position of a Micro LED chip. The binding substrate 12 is provided with a plurality of receiving electrodes 15 for binding a plurality of Micro LED chips. For binding a vertical Micro LED chip, the binding substrate 12 is provided with one receiving electrode 15 corresponding to a binding position of a Micro LED. As shown in Figure 11 FIG. 18, only two groups of receiving point electrodes 15 for binding two Micro LED on the binding substrate 12 are shown, one of which is, for example, a standby electrode of the other group. The conductive base 151 may, for example, adopt a binding pad material on a Micro LED driving circuit board, such as one or a combination of metals such as copper, nickel, gold, silver, etc., with a thickness ranging from about 1 to 2 microns.

[0064] Referring to ​The accommodation fixing structure 152 in the embodiment includes a plurality of nano pillars 1524, for example, arranged on the side of the conductive substrate 151 away from the micro electronic device 11. The plurality of nano pillars 1524 are arranged at intervals, and the gaps between the plurality of nano pillars 1524 form accommodation cavities 1525 for accommodating the insertion electrodes on the micro electronic device. Each nano pillar 1524 in the plurality of nano pillars 1524 has a height of, for example, 2-3 microns (the overall thickness of the receiving electrode 15 is 3-4 microns), and a width (or diameter) of, for example, 200-500 nanometers. The gap between two adjacent nano pillars 1524 is substantially equal to the width of each nano pillar 1524, i.e., the gap between two adjacent nano pillars 1524 is about 200-500 nanometers. The plurality of nano pillars 1524 are made of a metal material, for example, copper, nickel, or the like. The metal material has good ductility and can slightly deform during binding to better combine without being easily damaged. The structure of the binding backplane 30 provided in the embodiment includes the plurality of nano pillars 1524, which can be arranged in the same structure as the insertion electrodes on the micro electronic device and the receiving electrode 15 in the embodiment. The insertion electrodes on the micro electronic device can be stably bound by penetrating between the plurality of nano pillars 1524, achieving a repair scheme similar to the second embodiment. The plurality of nano pillars 1524 of the accommodation fixing structure 152 in the embodiment can be made of a metal material such as copper, nickel, tin, nickel, copper, indium, bismuth, or an alloy thereof. The insertion electrodes on the micro electronic device can be bound by welding without heating or by heating, which is set according to actual needs and is not limited in the embodiment. The structure of the binding backplane 30 provided in the embodiment can be heated and welded only after the last transfer in the entire transfer and repair process, or can be bound without welding and without single-point heating and welding in the related art, without affecting the quality of the surrounding welding points. In the repair process, only the Micro LED at the bad point position needs to be removed, and the process of removing the adhesive layer and supplementing the adhesive material in the related art is not required, so that the repair process is simpler and more feasible.

[0065] The above description is only a preferred embodiment of the present application and does not limit the present application in any form. Although the present application has been disclosed as above, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content without departing from the scope of the technical solution of the present application to obtain equivalent embodiments with equivalent changes. Any simple modification, equivalent change, and modification of the above embodiments based on the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. A binding component (10), characterized in that, include: Microelectronic devices (11); Bonding substrate (12); The first interlocking electrode (13) is disposed on one side of the microelectronic device (11) and electrically connected to the microelectronic device (11). The second interlocking electrode (14) is disposed on one side of the bonding substrate (12) and electrically connected to the bonding substrate (12). The first interlocking electrode (13) and the second interlocking electrode (14) can be interlocked to allow the microelectronic device (11) to be bonded to the bonding substrate (12); at least one of the first interlocking electrode (13) and the second interlocking electrode (14) serves as a receiving electrode (15), and the other serves as an insertion electrode (16); the receiving electrode (15) includes a conductive substrate (151) and a receiving and fixing structure (152) disposed on the conductive substrate (151), the receiving and fixing structure (152) can be inserted into and fix the insertion electrode (16) by the insertion electrode (16). The accommodating and fixing structure (152) includes a conductive sidewall (1521), a flexible structure (1522), and a conductive sheet (1523). The conductive sidewall (1521) surrounds the conductive substrate (151) to form a filling cavity (1526) and is electrically connected to the conductive substrate (151). The flexible structure (1522) fills the filling cavity (1526). The conductive sheet (1523) covers the side of the accommodating and fixing structure (152) away from the conductive substrate (151) and is electrically connected to the conductive sidewall (1521). The insertion electrode (16) includes: Solder layer (161); A conductive spike (162) is disposed on one side of the solder layer (161). The conductive spike (162) can pierce the conductive sheet (1523) and insert into the flexible structure (1522) after the microelectronic device (11) is pressed down, so that the conductive spike (162) is fixed by the flexible structure (1522). The solder layer (161) contacts the conductive sheet (1523) to be electrically connected to the receiving electrode (15) through the conductive sheet (1523) and the conductive sidewall (1521). The conductive sheet (1523) has a thickness of less than 1 micrometer, and the conductive spike (162) has a diameter of less than 1 micrometer.

2. The binding component (10) as described in claim 1, characterized in that, The conductive substrate (151), the conductive sidewall (1521), and the conductive sheet (1523) are made of the same metal material.

3. A microelectronic component (20), characterized in that, include: Microelectronic devices (11); A receiving electrode (15) is electrically connected to the microelectronic device (11). The receiving electrode (15) has a conductive substrate (151) and a receiving and fixing structure (152) disposed on the conductive substrate (151). The receiving and fixing structure (152) can be inserted into and fixed by an insertion electrode on a bonding substrate, so that the microelectronic device (11) can be bonded to the bonding substrate. The receiving and fixing structure (152) includes a conductive sidewall (1521), a flexible structure (1522), and a conductive sheet (1523). The conductive sidewall (1521) surrounds a filling cavity (1526) on the conductive substrate (151) and is electrically connected to the conductive substrate (151). The flexible structure (1522) The conductive sheet (1523) is filled in the filling cavity (1526); the conductive sheet (1523) covers the side of the receiving and fixing structure (152) away from the conductive substrate (151), the conductive sheet (1523) is electrically connected to the conductive sidewall (1521), and the thickness of the conductive sheet (1523) is less than 1 micrometer; wherein, the conductive sheet (1523) can be pierced by the insertion electrode after the microelectronic device (11) is pressed down to contact the insertion electrode, so that the insertion electrode is electrically connected to the receiving electrode (15) through the conductive sheet (1523) and the conductive sidewall (1521); the flexible structure (1522) is used to fix the portion of the insertion electrode that passes through the conductive sheet (1523).

4. A bonding backplate (30), characterized in that, include: Bonding substrate (12); A receiving electrode (15) is electrically connected to the bonding substrate (12). The receiving electrode (15) has a conductive substrate (151) and a receiving and fixing structure (152) disposed on the conductive substrate (151). The receiving and fixing structure (152) can be inserted into and fixed by an insertion electrode on a microelectronic device, so that the microelectronic device can be bonded to the bonding substrate (12). The receiving and fixing structure (152) includes a conductive sidewall (1521), a flexible structure (1522), and a conductive sheet (1523). The conductive sidewall (1521) surrounds a filling cavity (1526) on the conductive substrate (151) and is electrically connected to the conductive substrate (151). The flexible structure (1521) 22) Filled in the filling cavity (1526); the conductive sheet (1523) covers the side of the receiving and fixing structure (152) away from the conductive substrate (151), and the conductive sheet (1523) is electrically connected to the conductive sidewall (1521); the thickness of the conductive sheet (1523) is less than 1 micrometer; wherein, the conductive sheet (1523) can be pierced by the insertion electrode after the microelectronic device is pressed down to contact the insertion electrode, so that the insertion electrode is electrically connected to the receiving electrode (15) through the conductive sheet (1523) and the conductive sidewall (1521); the flexible structure (1522) is used to fix the portion of the insertion electrode that passes through the conductive sheet (1523).

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