Metallized battery and control method and system based on the relationship between junction depth and surface concentration

Abstract

The present invention discloses a metallized battery and a control method and system based on the relationship between junction depth and surface concentration, including an input unit, a unit for establishing the relationship between junction depth and surface concentration, a unit for determining the junction depth and surface concentration, and an output unit. In the a priori diffusion process of metallized materials, the surface phosphorus atom concentration and the depth of the junction depth are adjusted to keep the square resistance unchanged, and the surface phosphorus atom concentration and the depth of the junction depth are collected at this time; then the relationship between the junction depth and the surface concentration is established; when the diffusion process of the metallized materials is performed, the surface phosphorus atom concentration and the depth of the junction depth in the actual operation are determined by the obtained relationship between the junction depth and the surface concentration. The present invention can make the square resistance of the obtained solar cell sheet controllable, and thus can realize the design of high-output power solar cells.

Description

Technical Field

[0001] The invention relates to a metallized battery based on the relationship between junction depth and surface concentration and a control method and system, belonging to the technical field of solar cells. Background Art

[0002] Existing solar cells are increasingly pursuing higher power generation efficiency, and the excellent power generation efficiency comes from the diffusion process of the solar cell.

[0003] Chinese patent CN107785458A discloses a crystalline silicon diffusion process for achieving deep junction and low surface concentration. The diffusion process is to dope crystalline silicon in a diffusion furnace, including the following process: inflation - constant pressure - boat release - heating process - constant temperature process - oxidation - pre-diffusion - heating distribution - first constant temperature distribution - diffusion - second constant temperature distribution - cooling - inflation again - boat removal. The diffusion process can not only solve the uneven distribution of diffusion, but also make a deep junction with low surface concentration, make a higher square resistance, effectively improve and repair surface damage, and improve electrical performance. However, the technology achieves a high square resistance through a deep junction with low surface concentration. Due to the high square resistance, the battery output power is low.

[0004] Chinese patent CN112670353A discloses a boron-doped selective emitter cell and its preparation method, including N-type crystalline silicon, two positive electrodes arranged on the front of the N-type crystalline silicon and two negative electrodes arranged on the back of the N-type crystalline silicon, the back of the N-type crystalline silicon is provided with a SiO2 layer, and the SiO2 layer is provided with a P-doped polysilicon layer. In order to improve the efficiency of solar cells, SE structure is used to reduce the recombination rate, and the selective boron SE structure is prepared by boron slurry printing + laser propulsion, so as to achieve the characteristics of deep junction and high surface concentration in the heavily doped area, shallow junction and low surface concentration in the lightly doped area, and the process is simple and easy to operate, which greatly promotes the industrialization process of boron SE. This technology achieves deep junction and high surface concentration in the heavily doped area, shallow junction and low surface concentration in the lightly doped area, and its purpose is to form high concentration doping in the area below the gate electrode and low concentration doping in the area outside the gate electrode. Although it reduces surface recombination and improves the photoelectric conversion efficiency, the square resistance is uncontrollable and the battery output power is complex. Summary of the invention

[0005] Purpose of the invention: In order to overcome the deficiencies in the prior art, the present invention provides a metallized battery and a control method and system based on the relationship between junction depth and surface concentration.

[0006] Technical solution: To achieve the above purpose, the technical solution adopted by the present invention is:

[0007] A metallization battery process control method based on the relationship between junction depth and surface concentration includes the following steps:

[0008] Step 1: During the diffusion process of the metallization material in the previous experiment, the surface phosphorus atom concentration and the junction depth are adjusted to keep the square resistance unchanged, and the surface phosphorus atom concentration and the junction depth at this time are collected.

[0009] Step 2: Establish the relationship between junction depth and surface concentration based on the surface phosphorus atom concentration and junction depth obtained in step 1.

[0010] Step 3, during the diffusion process of the metallization material, the surface phosphorus atom concentration and the junction depth in actual operation are determined by the relationship between the junction depth and the surface concentration obtained in step 2.

[0011] Step 4: Diffusion of solar cell metallization materials is performed according to the surface phosphorus atom concentration and junction depth obtained in actual operation.

[0012] Preferably, the surface phosphorus atom concentration and the junction depth are dimensionally normalized to establish the relationship between the junction depth and the surface concentration as follows:

[0013] ;

[0014] in, Indicates the junction depth, represents the surface phosphorus atom concentration.

[0015] Preferably, the junction depth ranges from 0.2372 to 0.4416 um.

[0016] Preferably: the range of the surface phosphorus atom concentration is 2.282*10 20 -4.831*10 20 Pieces / cm 3 .

[0017] A metallization battery process control system based on the relationship between junction depth and surface concentration includes an input unit, a junction depth and surface concentration relationship establishment unit, a junction depth and surface concentration determination unit, and an output unit, wherein:

[0018] The input unit is used to input the surface phosphorus atom concentration and the junction depth at this time by adjusting the surface phosphorus atom concentration and the junction depth to keep the square resistance unchanged during the diffusion process of the metallization material in the previous experiment.

[0019] The junction depth and surface concentration relationship establishing unit is used to establish the junction depth and surface concentration relationship according to the obtained surface phosphorus atom concentration and junction depth.

[0020] The junction depth and surface concentration determination unit is used to determine the surface phosphorus atom concentration and junction depth in actual operation by obtaining the relationship between the junction depth and the surface concentration when performing the metallization material diffusion process.

[0021] The output unit is used to output the surface phosphorus atom concentration and junction depth obtained in actual operation.

[0022] Preferably, in the junction depth and surface concentration relationship establishment unit, the surface phosphorus atom concentration and the junction depth are dimensionally normalized to establish the junction depth and surface concentration relationship as follows:

[0023] ;

[0024] in, Indicates the junction depth, represents the surface phosphorus atom concentration.

[0025] A solar cell comprises a substrate and a metallized cell produced by the above-mentioned metallized cell process control method based on the relationship between junction depth and surface concentration, wherein the metallized cell is arranged on the substrate.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] The present invention establishes a relationship between junction depth and surface concentration, thereby determining the surface phosphorus atom concentration and the junction depth. The determined surface phosphorus atom concentration and the junction depth are applied in a solar cell metallization diffusion process, so that the obtained solar cell sheet resistance is controllable, thereby enabling the design of a high-output power solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic diagram of the relationship between junction depth and surface concentration. DETAILED DESCRIPTION

[0029] The present invention is further explained below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not used to limit the scope of the present invention. After reading the present invention, various equivalent forms of modifications to the present invention by those skilled in the art all fall within the scope defined by the claims attached to this application.

[0030] A metallization battery process control method based on the relationship between junction depth and surface concentration includes the following steps:

[0031] Step 1, in the diffusion process of the metallization material in the previous experiment, the surface phosphorus atom concentration and the junction depth are adjusted to keep the square resistance unchanged. In this embodiment, the square resistance is 190Ω / sq. As shown in Table 1, the surface phosphorus atom concentration and the junction depth at this time are collected.

[0032] Table 1 Experimental data of surface concentration and junction depth when the square resistance remains unchanged

[0033]

[0034] Step 2, according to the surface phosphorus atom concentration and junction depth obtained in step 1, as Figure 1 As shown, the surface phosphorus atom concentration and the junction depth are dimensionally normalized to establish the relationship between junction depth and surface concentration:

[0035] ;

[0036] in, Indicates the junction depth, represents the surface phosphorus atom concentration.

[0037] In the above relationship between junction depth and surface concentration, the optimal range of junction depth is: 0.2372-0.4416um. The optimal range of surface phosphorus atom concentration is: 2.282*10 20 -4.831*10 20 Pieces / cm 3 .

[0038] In addition, it should be noted that, under different sheet resistances, the relationship curve between junction depth and surface concentration only needs to be translated, that is, under different sheet resistances, the direction and shape of the relationship curve between junction depth and surface concentration are similar.

[0039] Step 3, during the diffusion process of the metallization material, the surface phosphorus atom concentration and the junction depth in actual operation are determined by the relationship between the junction depth and the surface concentration obtained in step 2.

[0040] Step 4: Diffusion of solar cell metallization materials is performed according to the surface phosphorus atom concentration and junction depth obtained in actual operation.

[0041] A metallization battery process control system based on the relationship between junction depth and surface concentration includes an input unit, a junction depth and surface concentration relationship establishment unit, a junction depth and surface concentration determination unit, and an output unit, wherein:

[0042] The input unit is used to input the surface phosphorus atom concentration and the junction depth at this time by adjusting the surface phosphorus atom concentration and the junction depth to keep the square resistance unchanged during the diffusion process of the metallization material in the previous experiment.

[0043] The junction depth and surface concentration relationship establishing unit is used to establish the junction depth and surface concentration relationship according to the obtained surface phosphorus atom concentration and junction depth.

[0044] In the junction depth and surface concentration relationship establishment unit, the surface phosphorus atom concentration and the junction depth are dimensionally normalized to establish the junction depth and surface concentration relationship as follows:

[0045] ;

[0046] in, Indicates the junction depth, represents the surface phosphorus atom concentration.

[0047] The junction depth and surface concentration determination unit is used to determine the surface phosphorus atom concentration and junction depth in actual operation by obtaining the relationship between the junction depth and the surface concentration when performing the metallization material diffusion process.

[0048] The output unit is used to output the surface phosphorus atom concentration and junction depth obtained in actual operation.

[0049] A solar cell comprises a substrate and a metallized cell produced by the metallized cell process control method based on the relationship between junction depth and surface concentration, wherein the metallized cell is arranged on the substrate.

[0050] In order to verify the validity of the relationship between junction depth and surface concentration, this embodiment uses the premise that the square resistance is 190Ω / sq and the surface phosphorus atomic concentration is 3.25*10 20 Pieces / cm 3 According to the above relationship between junction depth and surface concentration, the corresponding junction depth is 0.3263um, the actual measured square resistance is 190.01Ω / sq, and the surface phosphorus atom concentration is 3.246*10 20 Pieces / cm 3 , the junction depth is 0.3345um, the square resistance error is 0.01Ω / sq, and the surface phosphorus atom concentration error is 0.004*10 20 Pieces / cm 3 ,The junction depth error is 0.082um, which is within the range allowed by the experiment.

[0051] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A metallization battery process control method based on the relationship between junction depth and surface concentration, characterized in that: The following steps are involved: Step 1, in the diffusion process of the metallization material in the previous experiment, the surface phosphorus atom concentration and the junction depth are adjusted to keep the sheet resistance unchanged, and the surface phosphorus atom concentration and the junction depth at this time are collected; Step 2, establishing a relationship between junction depth and surface concentration based on the surface phosphorus atom concentration and the junction depth obtained in step 1; Step 3, during the diffusion process of the metallization material, the surface phosphorus atom concentration and the junction depth in actual operation are determined by the relationship between the junction depth and the surface concentration obtained in step 2; Step 4: Diffusion of solar cell metallization materials is performed according to the surface phosphorus atom concentration and junction depth obtained in actual operation.

2. The metallization battery process control method based on the relationship between junction depth and surface concentration according to claim 1 is characterized in that: The surface phosphorus atom concentration and junction depth are dimensionally normalized to establish the relationship between junction depth and surface concentration: ; in, Indicates the junction depth, represents the surface phosphorus atom concentration.

3. The metallization battery process control method based on the relationship between junction depth and surface concentration according to claim 2 is characterized in that: The junction depth ranges from 0.2372 to 0.4416 um.

4. The metallization battery process control method based on the relationship between junction depth and surface concentration according to claim 3 is characterized in that: The range of the surface phosphorus atom concentration is 2.282*10 20 -4.831*10 20 Pieces / cm 3 .

5. A metallization battery process control system based on the relationship between junction depth and surface concentration, characterized in that: It includes an input unit, a junction depth and surface concentration relationship establishment unit, a junction depth and surface concentration determination unit, and an output unit, wherein: The input unit is used to keep the square resistance unchanged by adjusting the surface phosphorus atom concentration and the junction depth during the diffusion process of the metallization material in the previous experiment, and input the surface phosphorus atom concentration and the junction depth at this time; The junction depth and surface concentration relationship establishing unit is used to establish the junction depth and surface concentration relationship according to the obtained surface phosphorus atom concentration and junction depth; The junction depth and surface concentration determination unit is used to determine the surface phosphorus atom concentration and junction depth in actual operation by obtaining the relationship between the junction depth and the surface concentration during the metallization material diffusion process; The output unit is used to output the surface phosphorus atom concentration and junction depth obtained in actual operation.

6. The metallization battery process control system based on the relationship between junction depth and surface concentration according to claim 5, characterized in that: In the junction depth and surface concentration relationship establishment unit, the surface phosphorus atom concentration and the junction depth are dimensionally normalized to establish the junction depth and surface concentration relationship as follows: ; in, Indicates the junction depth, represents the surface phosphorus atom concentration.

7. A solar cell, characterized in that: It comprises a substrate and a metallized battery produced by the metallized battery process control method based on the relationship between junction depth and surface concentration as claimed in claim 1, wherein the metallized battery is arranged on the substrate.

Images