Metallized solar cell based on constant square resistance and control method and system

Abstract

The invention discloses a metallized solar cell based on constant square resistance and a control method and system, comprising an input unit, a voltage and surface concentration relationship establishment unit, a voltage and junction depth relationship establishment unit, an information determination unit and an output unit. In a priori metallized material diffusion process, while keeping the square resistance constant, a corresponding metallized cell is obtained by adjusting the surface phosphorus atom concentration, and a voltage and surface concentration relationship is established; a corresponding metallized cell is obtained by adjusting the junction depth, and a voltage and junction depth relationship is established; in the metallized material diffusion process, while keeping the square resistance constant, a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth are selected, and the corresponding surface phosphorus atom concentration and junction depth are equal; the invention can make the obtained solar cell sheet square resistance controllable, and thus can realize the design of high-output power solar cell sheets.

Description

Technical Field

[0001] The invention relates to a metallized solar cell based on constant square resistance and a control method and system, belonging to the technical field of solar cells. Background Art

[0002] Existing solar cells are increasingly pursuing higher power generation efficiency, and the excellent power generation efficiency comes from the diffusion process of the solar cell.

[0003] Chinese patent CN107785458A discloses a crystalline silicon diffusion process for achieving deep junction and low surface concentration. The diffusion process is to dope crystalline silicon in a diffusion furnace, including the following process: inflation - constant pressure - boat release - heating process - constant temperature process - oxidation - pre-diffusion - heating distribution - first constant temperature distribution - diffusion - second constant temperature distribution - cooling - inflation again - boat removal. The diffusion process can not only solve the uneven distribution of diffusion, but also make a deep junction with low surface concentration, make a higher square resistance, effectively improve and repair surface damage, and improve electrical performance. However, the technology achieves a high square resistance through a deep junction with low surface concentration. Due to the high square resistance, the battery output power is low.

[0004] Chinese patent CN112670353A discloses a boron-doped selective emitter cell and its preparation method, including N-type crystalline silicon, two positive electrodes arranged on the front of the N-type crystalline silicon and two negative electrodes arranged on the back of the N-type crystalline silicon, the back of the N-type crystalline silicon is provided with a SiO2 layer, and the SiO2 layer is provided with a P-doped polysilicon layer. In order to improve the efficiency of solar cells, SE structure is used to reduce the recombination rate, and the selective boron SE structure is prepared by boron slurry printing + laser propulsion, so as to achieve the characteristics of deep junction and high surface concentration in the heavily doped area, shallow junction and low surface concentration in the lightly doped area, and the process is simple and easy to operate, which greatly promotes the industrialization process of boron SE. This technology achieves deep junction and high surface concentration in the heavily doped area, shallow junction and low surface concentration in the lightly doped area, and its purpose is to form high concentration doping in the area below the gate electrode and low concentration doping in the area outside the gate electrode. Although it reduces surface recombination and improves the photoelectric conversion efficiency, the square resistance is uncontrollable and the battery output power is complex. Summary of the invention

[0005] Purpose of the invention: In order to overcome the deficiencies in the prior art, the present invention provides a metallized solar cell based on constant square resistance and a control method and system.

[0006] Technical solution: To achieve the above purpose, the technical solution adopted by the present invention is:

[0007] A metallization battery process control method based on constant square resistance includes the following steps:

[0008] Step 1: In the a priori diffusion process of the metallization material, while keeping the square resistance unchanged, the surface phosphorus atom concentration is adjusted to obtain the corresponding metallization battery. The surface phosphorus atom concentration at this time and the voltage corresponding to the corresponding metallization battery are collected.

[0009] Step 2, establishing the relationship between voltage and surface concentration based on the surface phosphorus atom concentration obtained in step 1 and the voltage corresponding to the corresponding metallized battery.

[0010] Step 3: During the diffusion process of the a priori metallization material, the corresponding metallization battery is obtained by adjusting the junction depth while keeping the square resistance unchanged. The junction depth at this time and the voltage corresponding to the corresponding metallization battery are collected.

[0011] Step 4, establishing a voltage-junction depth relationship based on the junction depth obtained in step 3 and the voltage corresponding to the corresponding metallized battery.

[0012] Step 5, during the diffusion process of the metallization material, while keeping the square resistance unchanged, select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other and the corresponding surface phosphorus atom concentration and junction depth.

[0013] Step 6, performing metallization diffusion using the surface phosphorus atom concentration corresponding to the highest voltage and the junction depth corresponding to the highest voltage.

[0014] Preferably: the relationship between the voltage and the surface concentration is:

[0015] u1=―9.872ln(c1)+660.07;

[0016] Among them, u1 represents the voltage corresponding to the surface phosphorus atom concentration, and c1 represents the surface phosphorus atom concentration.

[0017] Preferred: Voltage and junction depth relationship:

[0018] u2=11.799ln(d1)+661.63;

[0019] Among them, u2 represents the voltage corresponding to the junction depth, and d1 represents the junction depth.

[0020] Preferably: the voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth are equal, and the corresponding surface phosphorus atom concentration and junction depth are:

[0021] u=u1=u2;

[0022]

[0023]

[0024] Among them, u is the voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth are equal, c is the surface phosphorus atom concentration corresponding to the highest voltage, and d is the junction depth corresponding to the highest voltage.

[0025] Preferably, the junction depth is in the range of 0.2372-0.4416um; the surface phosphorus atom concentration is in the range of 2.282-4.831*10 20 Pieces / cm 3 .

[0026] A metallized battery process control system based on constant square resistance includes an input unit, a voltage and surface concentration relationship establishment unit, a voltage and junction depth relationship establishment unit, an information determination unit and an output unit, wherein.

[0027] The input unit is used to obtain the corresponding metallized battery by adjusting the surface phosphorus atom concentration while keeping the square resistance unchanged during the diffusion process of the prior metallized material. The surface phosphorus atom concentration at this time and the voltage corresponding to the corresponding metallized battery are input. It is used to obtain the corresponding metallized battery by adjusting the junction depth while keeping the square resistance unchanged during the diffusion process of the prior metallized material. The junction depth at this time and the voltage corresponding to the corresponding metallized battery are input.

[0028] The voltage and surface concentration relationship establishing unit is used to establish the voltage and surface concentration relationship according to the obtained surface phosphorus atom concentration and the voltage corresponding to the corresponding metallized battery.

[0029] The voltage and junction depth relationship establishing unit is used to establish the voltage and junction depth relationship according to the obtained junction depth and the voltage corresponding to the corresponding metallized battery.

[0030] The information determination unit is used to select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other and the corresponding surface phosphorus atom concentration and junction depth while keeping the square resistance unchanged during the diffusion process of the metallization material.

[0031] The output unit is used to output the surface phosphorus atom concentration corresponding to the highest voltage and the junction depth corresponding to the highest voltage.

[0032] Preferably, the voltage-surface concentration relationship established in the voltage-surface concentration relationship establishing unit is:

[0033] u1=―9.872ln(c1)+660.07;

[0034] Among them, u1 represents the voltage corresponding to the surface phosphorus atom concentration, and c1 represents the surface phosphorus atom concentration.

[0035] Preferably, the voltage-junction-depth relationship in the voltage-junction-depth relationship establishing unit is:

[0036] u2=11.799ln(d1)+661.63;

[0037] Among them, u2 represents the voltage corresponding to the junction depth, and d1 represents the junction depth.

[0038] Preferably: the information determination unit is used to select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other while keeping the sheet resistance unchanged during the diffusion process of the metallization material, and the corresponding surface phosphorus atom concentration and junction depth are:

[0039] u=u1=u2;

[0040]

[0041]

[0042] Among them, u is the voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth are equal, c is the surface phosphorus atom concentration corresponding to the highest voltage, and d is the junction depth corresponding to the highest voltage.

[0043] A solar cell comprises a substrate and a metallized cell produced by the above-mentioned metallized cell process control method based on constant square resistance, wherein the metallized cell is arranged on the substrate.

[0044] Compared with the prior art, the present invention has the following beneficial effects:

[0045] The present invention establishes the relationship between voltage and surface concentration and the relationship between voltage and junction depth, thereby determining that while keeping the square resistance unchanged, a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth are equal, and the voltage and the corresponding surface phosphorus atom concentration and junction depth are selected. The determined surface phosphorus atom concentration and junction depth are applied in the metallization diffusion process of a solar cell, so that the square resistance of the obtained solar cell is controllable, thereby realizing the design of a high-output power solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 Schematic diagram of the relationship between voltage and surface concentration.

[0047] Figure 2 Schematic diagram of the relationship between voltage and junction depth.

[0048] Figure 3 Schematic diagram of the relationship between voltage, junction depth, and surface concentration. DETAILED DESCRIPTION

[0049] The present invention is further explained below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not used to limit the scope of the present invention. After reading the present invention, various equivalent forms of modifications to the present invention by those skilled in the art all fall within the scope defined by the claims attached to this application.

[0050] A metallization battery process control method based on constant square resistance includes the following steps:

[0051] Step 1: In the a priori diffusion process of metallization materials, the corresponding metallization battery is obtained by adjusting the surface phosphorus atom concentration while keeping the square resistance unchanged. In this embodiment, the square resistance is 190Ω / sq, as shown in Table 1, and the surface phosphorus atom concentration and the corresponding voltage of the corresponding metallization battery are collected at this time.

[0052] Table 1 Experimental data of surface concentration and voltage when the square resistance remains unchanged

[0053]

[0054] Step 2, according to the surface phosphorus atom concentration obtained in step 1 and the voltage corresponding to the corresponding metallized battery, such as Figure 1 As shown in , the surface phosphorus atom concentration and the voltage corresponding to the corresponding metallized battery are dimensionally normalized to establish the relationship between voltage and surface concentration:

[0055] u1=―9.872ln(c1)+660.07;

[0056] Wherein, u1 represents the voltage corresponding to the surface phosphorus atom concentration, and c1 represents the surface phosphorus atom concentration. The optimal range of the surface phosphorus atom concentration is: 2.282-4.831*10 20 Pieces / cm 3 .

[0057] In addition, it should be noted that under different sheet resistances, the relationship between voltage and surface concentration only needs to be shifted, that is, under different sheet resistances, the direction and shape of the relationship between voltage and surface concentration are similar.

[0058] Step 3: During the diffusion of the prior metallization material, the corresponding metallization battery is obtained by adjusting the junction depth while keeping the square resistance unchanged. In this embodiment, the square resistance is 190Ω / sq, as shown in Table 2, and the junction depth and the voltage corresponding to the corresponding metallization battery are collected.

[0059] Table 2 Experimental data of junction depth and voltage when square resistance remains unchanged

[0060]

[0061] Step 4, according to the junction depth obtained in step 3 and the voltage corresponding to the corresponding metallized battery, such as Figure 2 As shown, the junction depth and the voltage corresponding to the corresponding metallized battery are dimensionally normalized to establish the relationship between voltage and junction depth:

[0062] u2=11.799ln(d1)+661.63;

[0063] Wherein, u2 represents the voltage corresponding to the junction depth, d1 represents the junction depth. The optimal range of the junction depth is: 0.2372-0.4416um.

[0064] In addition, it should be noted that under different square resistances, the relationship between voltage and junction depth only needs to be shifted, that is, under different square resistances, the direction and shape of the relationship between voltage and junction depth are similar.

[0065] Step 5, such as Figure 3 As shown, during the diffusion of the metallization material, while keeping the square resistance unchanged, select the voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth to be equal to each other, and the corresponding surface phosphorus atom concentration and junction depth:

[0066] u=u1=u2;

[0067]

[0068]

[0069] Among them, u is the voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth are equal, c is the surface phosphorus atom concentration corresponding to the highest voltage, and d is the junction depth corresponding to the highest voltage.

[0070] Step 6, performing metallization diffusion using the surface phosphorus atom concentration corresponding to the highest voltage and the junction depth corresponding to the highest voltage.

[0071] A metallized battery process control system based on constant square resistance includes an input unit, a voltage and surface concentration relationship establishment unit, a voltage and junction depth relationship establishment unit, an information determination unit and an output unit, wherein.

[0072] The input unit is used to obtain the corresponding metallized battery by adjusting the surface phosphorus atom concentration while keeping the square resistance unchanged during the diffusion process of the prior metallized material. The surface phosphorus atom concentration at this time and the voltage corresponding to the corresponding metallized battery are input. It is used to obtain the corresponding metallized battery by adjusting the junction depth while keeping the square resistance unchanged during the diffusion process of the prior metallized material. The junction depth at this time and the voltage corresponding to the corresponding metallized battery are input.

[0073] The voltage and surface concentration relationship establishing unit is used to establish the voltage and surface concentration relationship according to the obtained surface phosphorus atom concentration and the voltage corresponding to the corresponding metallized battery.

[0074] The relationship between voltage and surface concentration established in the voltage and surface concentration relationship establishment unit is:

[0075] u1=―9.872ln(c1)+660.07;

[0076] Among them, u1 represents the voltage corresponding to the surface phosphorus atom concentration, and c1 represents the surface phosphorus atom concentration.

[0077] The voltage and junction depth relationship establishing unit is used to establish the voltage and junction depth relationship according to the obtained junction depth and the voltage corresponding to the corresponding metallized battery.

[0078] The voltage and junction depth relationship in the voltage and junction depth relationship establishment unit is:

[0079] u2=11.799ln(d1)+661.63;

[0080] Among them, u2 represents the voltage corresponding to the junction depth, and d1 represents the junction depth.

[0081] The information determination unit is used to select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other and the corresponding surface phosphorus atom concentration and junction depth while keeping the square resistance unchanged during the diffusion process of the metallization material.

[0082] The information determination unit is used to select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other while keeping the sheet resistance unchanged during the diffusion process of the metallization material, and the corresponding surface phosphorus atom concentration and junction depth are:

[0083] u=u1=u2;

[0084]

[0085]

[0086] Among them, u is the voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth are equal, c is the surface phosphorus atom concentration corresponding to the highest voltage, and d is the junction depth corresponding to the highest voltage.

[0087] The output unit is used to output the surface phosphorus atom concentration corresponding to the highest voltage and the junction depth corresponding to the highest voltage.

[0088] A solar cell comprises a substrate and a metallized cell produced by the above-mentioned metallized cell process control method based on constant square resistance, wherein the metallized cell is arranged on the substrate.

[0089] In order to verify the validity of the relationship between junction depth and surface concentration, this embodiment uses a square resistance of 190Ω / sq and a surface phosphorus atom concentration of 3.25*10 20 Pieces / cm 3 , then its voltage is 649.06mV. The corresponding junction depth is 0.3263um through the above relationship. The actual measured square resistance is 190.01Ω / sq, and the surface phosphorus atom concentration is 3.246*10 20 Pieces / cm 3 , the junction depth is 0.3345um, the square resistance error is 0.01Ω / sq, and the surface phosphorus atom concentration error is 0.004*10 20 Pieces / cm 3 ,The junction depth error is 0.082um, which is within the range allowed by the experiment.

[0090] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A metallization battery process control method based on constant square resistance, characterized in that: The following steps are involved: Step 1, in the a priori diffusion process of the metallization material, while keeping the square resistance unchanged, the corresponding metallization battery is obtained by adjusting the surface phosphorus atom concentration; collecting the surface phosphorus atom concentration at this time and the voltage corresponding to the corresponding metallization battery; Step 2, establishing a relationship between voltage and surface concentration based on the surface phosphorus atom concentration obtained in step 1 and the voltage corresponding to the corresponding metallized battery; Step 3, in the a priori diffusion process of the metallization material, while keeping the square resistance unchanged, the corresponding metallization battery is obtained by adjusting the junction depth; the junction depth at this time and the voltage corresponding to the corresponding metallization battery are collected; Step 4, establishing a voltage-junction depth relationship based on the junction depth obtained in step 3 and the voltage corresponding to the corresponding metallized battery; Step 5, during the diffusion process of the metallization material, while keeping the square resistance unchanged, selecting a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other and the corresponding surface phosphorus atom concentration and junction depth; Step 6, performing metallization diffusion using the surface phosphorus atom concentration corresponding to the highest voltage and the junction depth corresponding to the highest voltage.

2. The metallization battery process control method based on constant square resistance according to claim 1 is characterized in that: The surface phosphorus atom concentration and the voltage corresponding to the corresponding metallized battery are dimensionally normalized to establish the relationship between voltage and surface concentration. The relationship between voltage and surface concentration is: ; in, represents the voltage corresponding to the surface phosphorus atom concentration, represents the surface phosphorus atomic concentration, and the range of the surface phosphorus atomic concentration is 2.282*10 20 -4.831*10 20 Pieces / cm 3 .

3. The metallization battery process control method based on constant square resistance according to claim 2 is characterized in that: The junction depth and the voltage corresponding to the corresponding metallized battery are dimensionally normalized to establish the relationship between voltage and junction depth. The relationship between voltage and junction depth is as follows: ; in, Indicates the voltage corresponding to the junction depth, It represents the junction depth, and the junction depth ranges from 0.2372-0.4416um.

4. The metallization battery process control method based on constant square resistance according to claim 3 is characterized in that: The voltage corresponding to the surface phosphorus atom concentration and the voltage corresponding to the junction depth are equal, and the corresponding surface phosphorus atom concentration and junction depth are: ; ; ; in, The voltage corresponding to the surface phosphorus atom concentration is equal to the voltage corresponding to the junction depth. is the surface phosphorus atom concentration corresponding to the highest voltage, is the junction depth corresponding to the highest voltage.

5. A metallized battery process control system based on constant square resistance, characterized in that: It includes an input unit, a voltage and surface concentration relationship establishment unit, a voltage and junction depth relationship establishment unit, an information determination unit and an output unit, wherein: The input unit is used to obtain the corresponding metallized battery by adjusting the surface phosphorus atom concentration while keeping the square resistance unchanged during the diffusion process of the prior metallized material; input the surface phosphorus atom concentration at this time and the voltage corresponding to the corresponding metallized battery; used to obtain the corresponding metallized battery by adjusting the junction depth while keeping the square resistance unchanged during the diffusion process of the prior metallized material; input the junction depth at this time and the voltage corresponding to the corresponding metallized battery; The voltage and surface concentration relationship establishing unit is used to establish the voltage and surface concentration relationship according to the obtained surface phosphorus atom concentration and the voltage corresponding to the corresponding metallized battery; The voltage and junction depth relationship establishing unit is used to establish the voltage and junction depth relationship according to the obtained junction depth and the voltage corresponding to the corresponding metallized battery; The information determination unit is used to select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other and the corresponding surface phosphorus atom concentration and junction depth while keeping the square resistance unchanged during the diffusion process of the metallization material; The output unit is used to output the surface phosphorus atom concentration corresponding to the highest voltage and the junction depth corresponding to the highest voltage.

6. According to claim 5, the metallized battery process control system based on constant square resistance is characterized in that: In the voltage and surface concentration relationship establishment unit, the surface phosphorus atom concentration and the voltage corresponding to the corresponding metallized battery are dimensionally normalized to establish the voltage and surface concentration relationship. The established voltage and surface concentration relationship is: ; in, represents the voltage corresponding to the surface phosphorus atom concentration, represents the surface phosphorus atomic concentration, and the range of the surface phosphorus atomic concentration is 2.282*10 20 -4.831*10 20 Pieces / cm 3 .

7. The metallized battery process control system based on constant square resistance according to claim 6 is characterized in that: In the voltage and junction depth relationship establishment unit, the junction depth and the voltage corresponding to the corresponding metallized battery are dimensionally normalized to establish the voltage and junction depth relationship. The established voltage and junction depth relationship is: ; in, Indicates the voltage corresponding to the junction depth, It represents the junction depth, and the junction depth ranges from 0.2372-0.4416um.

8. The metallized battery process control system based on constant square resistance according to claim 7 is characterized in that: The information determination unit is used to select a voltage corresponding to the surface phosphorus atom concentration and a voltage corresponding to the junction depth that are equal to each other while keeping the sheet resistance unchanged during the diffusion process of the metallization material, and the corresponding surface phosphorus atom concentration and junction depth are: ; ; ; in, The voltage corresponding to the surface phosphorus atom concentration is equal to the voltage corresponding to the junction depth. is the surface phosphorus atom concentration corresponding to the highest voltage, is the junction depth corresponding to the highest voltage.

9. A solar cell, characterized in that: It comprises a substrate and a metallized battery produced by the metallized battery process control method based on constant square resistance according to claim 1, wherein the metallized battery is arranged on the substrate.

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