A method for preparing quantum dot laser light source by coupling of periodically arranged optical material

Abstract

The application discloses a method for preparing a quantum dot laser light source by coupling of periodically arranged optical materials. By modulating the resonance coupling between a photonic crystal microcavity and a quantum dot light-emitting wavelength, a continuous spectrum laser light source is realized. The preparation method of the photonic crystal microcavity is as follows: a PDMS stamp with a special periodic arrangement shape is prepared in advance, HPC material is spin-coated on the light-emitting electrode side of a bottom-emitting quantum dot device, the prepared PDMS stamp is used to press a periodic arrangement pattern, then optical material is spin-coated and deposited on the pattern, and the HPC material is washed away with a solvent after spin-coating, so that a photonic crystal microcavity with a certain periodic air hole is obtained. The modulation of the optical properties of the photonic crystal microcavity can be realized by adjusting the PDMS stamp template. The method can construct a photonic crystal microcavity with a specific energy band structure on the light-emitting side of the bottom-emitting quantum dot device, so that a high-brightness and high-quality laser light source is obtained.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quantum dot device process preparation, in particular to a method for preparing a quantum dot laser light source by coupling of periodically arranged optical materials. BACKGROUND

[0002] With the continuous development of science and technology, laser light sources have high brightness, good directivity and monochromaticity, making them irreplaceable light sources in the fields of basic scientific research and industrial technology. However, in many practical applications, light sources are required to have a certain spectral width, at which time ordinary laser light sources cannot meet the application requirements. Therefore, the demand for tunable continuous spectrum laser light sources is very urgent. SUMMARY

[0003] Therefore, the purpose of the present application is to provide a method for preparing a quantum dot laser light source by coupling of periodically arranged optical materials, which can make the process of obtaining a laser light source simpler and obtain a laser light source with higher quality and higher power through a photonic crystal microcavity to save energy loss.

[0004] To achieve the above purpose, the present application adopts the following technical scheme: a method for preparing a quantum dot laser light source by coupling of periodically arranged optical materials, which deposits an optical material layer with a periodic structure on the light-emitting electrode side of a bottom-emitting quantum dot device to construct a photonic crystal microcavity with a specific energy band structure, and the preparation of the periodic structure optical material includes the following steps:

[0005] 1) A PDMS stamp with a special periodic arrangement shape is prepared in advance;

[0006] 2) An HPC film is spin-coated on the light-emitting electrode side of the bottom-emitting quantum dot device;

[0007] 3) The HPC film is imprinted on the HPC film using the PDMS stamp, and a specific shape of the HPC film is obtained;

[0008] 4) An optical material is spin-coated on the imprinted HPC film, and then the HPC is washed off with a solvent.

[0009] In a preferred embodiment, the material of the HPC film is hydroxypropyl methylcellulose.

[0010] In a preferred embodiment, the optical material is one or a mixture of several of polymethyl methacrylate PMMA, polydioxythiophene PEDOT, polyethylene PE, and polystyrene PS.

[0011] In a preferred embodiment, the solvent is water.

[0012] In a preferred embodiment, the bottom-emitting quantum dot optical device is a quantum dot light-emitting device of a normal structure, which only needs to be prepared by sequentially depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a metal cathode on the surface of a transparent conductive substrate ITO in a manner of spin coating and film plating.

[0013] In a preferred embodiment, the hole injection layer material of the bottom-emitting quantum dot optical device is one of a polymer poly 3,4-ethylenedioxythiophene PEDOT:PSS, a polypyrrole P3HT, a poly 3-hexylthiophene P3HT, molybdenum oxide, nickel oxide and cuprous thiocyanate.

[0014] In a preferred embodiment, the hole transport layer of the bottom-emitting quantum dot optical device is one or a mixture of several of a polymer TFB, TFB:CBP, PF8Cz, Poly:TPD and PVK.

[0015] In a preferred embodiment, the light-emitting layer of the bottom-emitting quantum dot optical device is one of CdSe, InP, CdS, ZnS, ZnSe, ZnCdSe and CdZnSeS.

[0016] In a preferred embodiment, the electron transport layer of the bottom-emitting quantum dot optical device is ZnO nanoparticles, ZnMgO nanoparticles or molybdenum oxide.

[0017] In a preferred embodiment, the material of the metal cathode is silver or aluminum.

[0018] Compared with the prior art, the present application has the following beneficial effects:

[0019] (1) By using PDMS to press and imprint on HPC and then spin coating optical materials, a photonic crystal can be obtained, so that a quantum dot laser light source coupled with a photonic crystal microcavity can be obtained, which can be applied to a laser.

[0020] (2) The wavelength of the light source is easy to adjust.

[0021] (3) The preparation process is safe, pollution-free, does not generate by-products and simple and easy to operate.

[0022] (4) The PDMS stamp can be reused. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 FIG. 1 is a structure diagram of a bottom-emitting quantum dot laser light source device obtained in an embodiment of the present application;

[0024] Figure 2 FIG. 4 is a process flow diagram of the imprinting process in the embodiment of the present application. DETAILED DESCRIPTION

[0025] The application will be further described below in conjunction with the accompanying drawings and examples.

[0026] It should be noted that the following detailed description is illustrative only, and is intended to provide further description in order to provide a fuller enabling teaching of the present application. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0027] It is also important to note that the terms used herein are not intended to limit the particular embodiments of the present application which can be practiced with the examples of the present application. As used herein, unless expressly stated to the contrary, the singular term "a", "an" and "the" include the plural and the use of "or" means "and / or", i.e., the "or" is the inclusive, not the exclusive use. Furthermore, to the extent that there are any ambiguities in the meaning of any terms used herein, those ambiguities should be interpreted in a manner that best serves the full enabling teaching of the present application.

[0028] The present application provides a method for preparing a quantum dot laser light source by coupling a periodically arranged optical material, which comprises the following steps:

[0029] 1) A PDMS stamp with a special periodic arrangement shape is prepared in advance.

[0030] 2) A HPC film is spin-coated on the light-emitting electrode side of the bottom-emitting quantum dot device.

[0031] 3) The HPC film is imprinted with the PDMS stamp, and a HPC film with a specific shape is obtained.

[0032] 4) An optical material is spin-coated on the imprinted HPC film, and then the HPC is washed off with a solvent.

[0033] The HPC material is hydroxypropyl methylcellulose. The optical material is one or a mixture of several of polymethyl methacrylate (PMMA), polydioxythiophene (PEDOT), polyethylene (PE), and polystyrene (PS). The solvent is water. The material of the hole injection layer is one of the following: polymeric poly 3,4-ethylenedioxythiophene (PEDOT:PSS), polypyrrole (P3HT), poly 3-hexylthiophene (P3HT), molybdenum oxide, nickel oxide, and cuprous thiocyanate. The material of the hole transport layer is one or a mixture of several of the following: polymeric TFB, TFB:CBP, PF8Cz, Poly:TPD, and PVK. The material of the light-emitting layer is one of the following: CdSe, InP, CdS, ZnS, ZnSe, ZnCdSe, and CdZnSeS. The material of the electron transport layer is ZnO nanoparticles, ZnMgO nanoparticles, and molybdenum oxide. The material of the metal cathode is silver or aluminum.

[0034] The following takes an example to explain the process of the application in more detail.

[0035] Example 1

[0036] (1) Preparation of PDMS stamp: coating polydimethylsiloxane (PDMS) on a silicon master template, then heating for 50 min to make it in a solidified state, annealing temperature is 80℃. Then separate the solidified PDMS from the container. The area of the PDMS stamp is 0.8 cm2, and the thickness is 0.5 mm.

[0037] Wherein the PDMS is mixed with a curing agent in a mass ratio of 10:1, then stirred for 10 min, placed in a vacuum drying box to vacuumize, and taken out after standing for 1 h.

[0038] (2) The bottom-emitting quantum dot optical device structure is in turn ITO layer, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and metal cathode. The hole injection layer uses PEDOT:PSS solution, and the hole transport layer uses TFB solution, which are spin-coated into films by using a film applicator at a speed of 3000 rpm for 40 s. The light-emitting layer is a quantum dot solution, which is spin-coated into a film by using a film applicator at a speed of 2000 rpm for 40 s. The electron transport layer is a ZnO nanoparticle solution, which is spin-coated into a film by using a film applicator at a speed of 3000 rpm for 40 s. The metal cathode is a 100 nm Ag electrode deposited by a vacuum film deposition machine.

[0039] (3) Generation of photonic crystal microcavity: first, configure the HPC material into a solution, spin-coat an HPC film on the light-emitting electrode side of the device at a speed of 2000 rpm for 30 s, then press the HPC with PDMS and anneal at 60℃ for 2 min. Tear off the PDMS to obtain columnar HPC with a special periodic arrangement shape, spin-coat the optical material in the middle of the HPC, and wash away the HPC with water to obtain a photonic crystal microcavity.

[0040] In summary, the method of the application has low manufacturing cost, simple preparation process, fast preparation speed, and does not require special environment, and can be performed in an atmospheric environment at normal temperature and pressure.

[0041] The above is the preferred embodiment of the application, and any changes made according to the technical solutions of the application, as long as the resulting functions do not exceed the scope of the technical solutions of the application, are within the protection scope of the application.

Claims

1. A method for fabricating a quantum dot laser light source by coupling of periodically arranged optical materials, characterized by, The application discloses a method for preparing a photonic crystal microcavity with a specific energy band structure, which comprises the following steps: 1) preparing a PDMS stamp with a special periodic arrangement shape in advance; 2) spin-coating an HPC film on the light-emitting electrode side of a bottom-emitting quantum dot device; 3) using the PDMS stamp to press the HPC film, so that an HPC film with a specific shape is obtained; 4) spin-coating an optical material on the pressed HPC film, and then washing the HPC away with a solvent; The material of the HPC film is hydroxypropyl methyl cellulose. The optical material is one or a mixture of several of polymethyl methacrylate (PMMA), polydioxythiophene (PEDOT), polyethylene (PE) and polystyrene (PS). The bottom-emitting quantum dot device is a quantum dot light-emitting device with a normal structure, which only needs to be prepared by spin-coating and plating on the surface of a transparent conductive substrate ITO in the order of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a metal cathode.

2. The method for fabricating quantum dot laser source by periodically arranged optical material coupling according to claim 1, characterized in that, The solvent is water.

3. The method for fabricating quantum dot laser source by periodically arranging optical material coupling according to claim 1, characterized in that, The material of the hole injection layer of the bottom-emitting quantum dot device is one of a polymer poly (3, 4-ethylenedioxythiophene) (PEDOT:PSS), a polypyrrole (P3HT), a poly (3-hexylthiophene) (P3HT), molybdenum oxide, nickel oxide and copper thiocyanate.

4. The method for fabricating quantum dot laser source by periodically arranging optical material coupling according to claim 1, characterized in that, The material of the hole transport layer of the bottom-emitting quantum dot device is one or a mixture of several of a polymer TFB, TFB:CBP, PF8Cz, Poly:TPD and PVK.

5. The method for fabricating quantum dot laser source by periodically arranging optical material coupling according to claim 1, characterized in that, The material of the light-emitting layer of the bottom-emitting quantum dot device is one of CdSe, InP, CdS, ZnS, ZnSe, ZnCdSe and CdZnSeS.

6. The method for fabricating quantum dot laser source by periodically arranging optical material coupling according to claim 1, characterized in that, The material of the electron transport layer of the bottom-emitting quantum dot device is ZnO nanoparticles, ZnMgO nanoparticles or molybdenum oxide.

7. The method for fabricating quantum dot laser source by periodically arranging optical material coupling according to claim 1, characterized in that, The material of the metal cathode is silver or aluminum.

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