Solid oxide cell stack full coupling simulation method, system, medium, and product

Abstract

The application discloses a solid oxide cell stack full coupling simulation method, system, medium and product, relates to the field of solid oxide cell simulation and emulation, and comprises the following steps: acquiring the cell stack layer number and geometric component unit of a solid oxide cell stack; creating a geometric model of the solid oxide cell stack based on the cell stack layer number and the geometric component unit; performing mesh division on the geometric model to obtain a meshed geometric model; and performing automatic simulation on the meshed geometric model based on a step-by-step coupling calculation strategy to obtain a simulation result. The application can shorten the time for modeling and multi-field coupling calculation while ensuring the accuracy of the simulation result.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of solid oxide cell stack simulation, in particular to a solid oxide cell stack full coupling simulation method, system, medium and product. BACKGROUND

[0002] There is no full-process simulation automation design for solid oxide cell stacks (SOC) in existing invention patents, where SOC includes solid oxide fuel cells (SOFC) and solid oxide electrolysis cells (SOEC), and only simulation automation technology related to proton exchange membrane fuel cells (PEMFC) is found in the literature, and only single repeat units and single-layer PEMFC stacks are simulated automatically.

[0003] In the process of automatic simulation of single repeat units and single-layer PEMFC stacks, in order to reduce the complexity of modeling and the difficulty of calculation, two simplification methods are generally used. One is to simplify the model dimension, simplifying the three-dimensional model to two-dimensional, and the other is to simplify the model structure, only simulating single-layer stacks. These simplification methods will make the simulation results deviate from the actual industrial-grade stack operation. SUMMARY

[0004] The purpose of the present application is to provide a solid oxide cell stack full coupling simulation method, system and device, which can shorten the time for modeling and multi-field coupling calculation while ensuring the accuracy of the simulation results.

[0005] To achieve the above purpose, the present application provides the following scheme:

[0006] A solid oxide cell stack full coupling simulation method comprises:

[0007] Obtaining the stack layer number and geometric composition unit of the solid oxide cell stack;

[0008] Creating a geometric model of the solid oxide cell stack based on the stack layer number and geometric composition unit;

[0009] Grid division is performed on the geometric model to obtain a grid-based geometric model;

[0010] Automated simulation is performed on the grid-based geometric model based on a step-by-step coupling calculation strategy to obtain a simulation result.

[0011] A computer system comprises a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the solid oxide cell stack full coupling simulation method according to any one of the preceding embodiments.

[0012] A computer readable storage medium, having stored thereon a computer program, which, when executed by a processor, implements the steps of the solid oxide cell stack full coupling simulation method of any one of the preceding embodiments.

[0013] A computer program product comprising a computer program which, when executed by a processor, implements the steps of the solid oxide cell stack full coupling simulation method of any one of the preceding embodiments.

[0014] According to the specific embodiments of the present application, the following technical effects are disclosed:

[0015] The present application discloses a solid oxide cell stack full coupling simulation method, system, medium and product, the method comprising: obtaining the stack layer number and geometric composition unit of the solid oxide cell stack; creating a geometric model of the solid oxide cell stack based on the stack layer number and geometric composition unit; performing grid division on the geometric model to obtain a grid-based geometric model; and performing automatic simulation on the grid-based geometric model based on a step-by-step coupling calculation strategy to obtain a simulation result. The present application can shorten the time for modeling and multi-field coupling calculation while ensuring the accuracy of the simulation result. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0017] Figure 1 The solid oxide cell stack full coupling simulation method provided for Embodiment 1 of the present application is shown in the schematic diagram.

[0018] Figure 2 The flowchart of the solid oxide cell stack full coupling simulation method provided by the present application is shown in the schematic diagram.

[0019] Figure 3 The first schematic diagram of the specific structure disassembly of the single-layer stack of the flat-plate SOC stack model provided by the present application is shown in the schematic diagram.

[0020] Figure 4 The first schematic diagram of the geometric model of the complete multi-layer stack of the flat-plate SOC stack model provided by the present application is shown in the schematic diagram.

[0021] Figure 5 The first GUI graphical interface diagram of the script packaging provided by the present application is shown in the schematic diagram.

[0022] Figure 6 The second GUI graphical interface diagram of the script packaging provided by the present application is shown in the schematic diagram.

[0023] Figure 7 A third GUI graphical interface of the script package provided by the present application. DETAILED DESCRIPTION

[0024] The technical solutions in the embodiments of the present application will be apparently and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0025] The purpose of the present application is to provide a solid oxide cell stack full coupling simulation method, system, medium and product, aiming to shorten the time for modeling and multi-field coupling calculation while ensuring the accuracy of the simulation results.

[0026] The present application solves the problems of complex SOC stack modeling, tedious grid division, difficult simulation calculation convergence, and time-consuming in traditional simulation process. SOC stack multi-physical field full coupling simulation has always been a very difficult challenge in this field. The implementation of this automatic process greatly reduces the threshold for related practitioners to perform SOC stack simulation calculation, enabling researchers to easily design the structure of the SOC stack and perform parameterized calculation, thereby accelerating the research process of stack theoretical simulation.

[0027] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0028] Embodiment 1

[0029] Ansys workbench is started in the background in the form of a command line and the script is run, which includes a geometry modeling script, a mesh division script, and a simulation calculation script.

[0030] As shown in Figure 1 and Figure 2 , a solid oxide cell stack full coupling simulation method in the embodiment includes:

[0031] Step 101: Obtain the stack layer number and geometric component unit of the solid oxide cell stack.

[0032] Step 102: Create a geometric model of the solid oxide cell stack based on the stack layer number and geometric component unit.

[0033] Through Ansys SpaceClaim scripting function (based on python), the automatic creation of the geometric model of the industrial large-size flat plate type SOC stack is realized, and the automatically created SOC stack geometric model is a high-precision real stack model and can be a stack of any number of layers.

[0034] Through Ansys SpaceClaim scripting function, the geometric model of the solid oxide cell stack is created based on the number of stack layers and the geometric composition unit.

[0035] Based on the basic geometric composition unit (cuboid in the present application), a single-layer stack is automatically created by using the convenience of python script according to the periodicity of the stack structure (in the plane direction of the cell sheet).

[0036] Based on the single-layer stack, a complete multi-layer stack is also automatically created according to the periodicity of the stack structure (perpendicular to the plane direction of the cell sheet). The geometric model of the multi-layer stack is used for subsequent meshing.

[0037] Based on the complete multi-layer stack geometric model, the naming of components / boundaries is automatically completed by using the unique location attribute of the components / boundary objects in the geometry, which is used for the setting of the boundary conditions for simulation calculation.

[0038] As shown in Figure 3 : Flat plate type SOC stack model specific structure disassembly diagram, the single-layer stack shown in the figure is two inlets / three outlets (half of the complete stack after symmetry processing), which indicates the location and name of each component. As shown in Table 1, each geometric parameter in the length, width and height directions of the stack supports customization, and the corresponding edge mesh number of these geometric feature sizes also supports custom configuration.

[0039] Table 1: List of geometric dimensions that can be customized for flat plate type SOC stack model

[0040]

[0041] Based on the location attribute of each component in the multi-layer stack geometric model, each component in the multi-layer stack geometric model is named to obtain the multi-layer stack geometric model after naming the components.

[0042] Based on the multi-layer stack geometric model, the edge set naming related to meshing is automatically completed by using the unique location attribute of the edge set in the geometry to select the object, which is used for the specification of the edge mesh number / mesh density change in meshing.

[0043] The edge set of the multi-layer stack geometric model after naming the components is named to obtain the geometric model of the solid oxide cell stack.

[0044] Figures 5-7 The GUI graphical interface encapsulated for the script has two sets of scripts corresponding to the SOFC stack and the SOEC stack respectively, and they share the same geometric and mesh model. The input parameters include geometric parameters, mesh parameters, material properties, electrochemical parameters and working condition parameters. The geometric parameters have been shown in Table 1, and the mesh parameters and the geometric parameters are one-to-one corresponding, as shown in Table 2, the mesh parameterization with maximum degree of freedom is realized. Other parameters that can be customized include: Figure 6

[0045] All the supported custom material property parameters include but are not limited to: density, specific heat, thermal conductivity, and the material properties related to the electrode porous medium, such as permeability, porosity, tortuosity factor, average pore radius, etc.

[0046] All the supported custom electrochemical parameters include but are not limited to: the activation energy, exchange current density and transport coefficient of the Butler-Volmer equation related electrochemical parameters of the functional layer of the fuel electrode and the air electrode.

[0047] All the supported custom working condition parameters include but are not limited to: fuel utilization, fuel composition molar ratio, fuel inlet temperature, excess air ratio, air inlet temperature, working current density / voltage, and ambient temperature.

[0048] In addition, as shown in Table 3, the application provides a default optimal mesh configuration and calculation related parameters (for the SOFC stack with less than or equal to 40 layers), which can help users to complete the simulation process simply and quickly if they are not familiar with the selection of related parameters. Figures 5 to 7

[0049] As shown in Table 4 and Table 5, step 103: performing mesh division on the geometric model to obtain a meshed geometric model. Figure 1 Figure 2 As shown in Table 4 and Table 5, step 103: performing mesh division on the geometric model to obtain a meshed geometric model.

[0050] Based on the geometric model obtained in step 102, the Ansys Workbench Meshing scripting function (based on python) is used to realize automatic mesh division of the SOFC stack model, and the automatically divided SOFC stack mesh supports the setting of mesh number in each direction of length, width and height of any component and the setting of mesh density variation (bias type).

[0051] The geometric model is meshed by using the Ansys Workbench Meshing scripting function to obtain a meshed geometric model.

[0052] ​​​The modification of the component region fluid properties (fluid / solid region) is automatically completed by assigning the corresponding types (fluid / solid) of different regions in the geometric model through the FluidSolidPhase attribute of the Body object, and the component fluid property modification is used for setting the region attribute in the subsequent simulation calculation.

[0053] The types of different regions in the geometric model are determined based on the inherent properties of the stack components. The types include fluid or solid.

[0054] According to the types of different regions in the geometric model, the attributes of different regions in the geometric model are modified by using the FluidSolidPhase attribute of the Body object, to obtain a modified geometric model.

[0055] The local mesh setting of each component is automatically completed by using the AddAutomaticMethod method of the Mesh object. The local mesh setting of the component includes but is not limited to the volume mesh division method and the volume mesh composition type, which are used for controlling the SOC stack mesh cell quality. The mesh quality will directly affect the accuracy and stability of the subsequent simulation calculation.

[0056] The local mesh setting of the component of the modified geometric model is completed by using the AddAutomaticMethod method of the Mesh object, to obtain the component local mesh setting.

[0057] The local mesh setting of each edge set is automatically completed by using the AddSizing method of the Mesh object. The local mesh setting of the edge set includes but is not limited to the edge mesh number and the mesh density variation, which are used for controlling the mesh density in each direction of each component of the SOC stack.

[0058] The local mesh setting of the edge set of the modified geometric model is completed by using the AddSizing method of the Mesh object, to obtain the edge set local mesh setting.

[0059] The mesh division is completed by customizing the Mesh OrderWorksheet. The customized Mesh OrderWorksheet enables the mesh division to be completed in the order of the naming selection sequence set by the script, which helps to improve the stability and efficiency of the mesh division.

[0060] The mesh division of the modified geometric model is completed based on the edge set local mesh setting and the component local mesh setting by using the Mesh OrderWorksheet, to obtain a meshed geometric model.

[0061] Step 104: Automatic simulation of the meshed geometric model based on the step-by-step coupling calculation strategy, to obtain a simulation result.

[0062] The simulation calculation automation of the SOC stack model is realized through Ansys Fluent tui command (based on scheme) in combination with a step-by-step coupled calculation strategy, and the calculation robustness is high. The automatically calculated SOC stack model is a three-dimensional multi-physical field fully coupled model without any physical field simplification or decoupling, and is closer to the real working condition.

[0063] The simulation result is obtained by automatically simulating the meshed geometric model through Ansys Fluent tui command based on a step-by-step coupled calculation strategy.

[0064] Based on the SOC stack mesh data of the meshed geometric model obtained in step 103, the model setting of each physical field of the SOC stack is completed through the use / define / models related tui command.

[0065] The use / define / models related tui command is used to set each physical field of the meshed geometric model, and the geometric model after the physical field setting is obtained.

[0066] The related setting of the material properties of the SOC stack is completed through the use / define / materials related tui command.

[0067] The use / define / materials related tui command is used to set the stack material properties of the geometric model after the physical field setting, and the geometric model after the stack material setting is obtained.

[0068] The related setting of the initial boundary conditions of the SOC stack is completed through the / define / boundary-conditions related tui command. The initial boundary conditions in this step are initial constant values (including electrochemical boundary, mass source term) conforming to the actual working condition, and are not the boundary conditions under the real running working condition of the stack, and are used to calculate the initial field distribution, improve the calculation efficiency, and make the calculation more stable. On the other hand, the temperature field is not calculated in the initial simulation stage, which is used to improve the calculation stability.

[0069] The use / define / boundary-conditions related tui command is used to set the initial boundary conditions of the geometric model after the stack material setting, and the geometric model after the initial boundary condition setting is obtained.

[0070] Use / solve / execute-commands / add-edit to add a first convergence monitoring condition to automatically stop iterations when the set convergence condition is reached. The first convergence monitoring condition is that the stop criterion of the gas concentration is less than a first set threshold. (For SOC stacks with 40 or fewer layers, the first set threshold can be 1e-3.) At this point, the material field calculation is basically stable.

[0071] An iterative simulation experiment is performed on the geometric model after the boundary conditions are set until the first monitoring convergence condition is met and the iteration ends to obtain an initial field; the first monitoring convergence condition is: the Stop Criterion of the gas concentration is less than a first set threshold.

[0072] The electrochemical boundary conditions (including potential boundaries and electrochemical component mass source terms) are switched to the real working conditions through the / define / boundary-conditions related tui command. This step can also be regarded as the coupling of the electrochemical field and the material transfer field in the decoupled state.

[0073] The electrochemical boundary conditions of the initial field are switched to the actual working conditions through the / define / boundary-conditions related tui command to obtain the initial field after switching; the electrochemical boundary conditions include the potential boundary and the electrochemical component mass source term.

[0074] Continue to add the second monitoring convergence condition through / solve / execute-commands / add-edit. The second monitoring convergence condition is: the Stop Criterion of the gas concentration is less than the first set threshold (the first set threshold can be selected as 1e-3) and the Stop Criterion of the average current density is less than the second set threshold (the second set threshold can be selected as 1e-4) (same as above, for the number of fuel cell layers less than or equal to 40). At this time, the material field and electrochemical field calculations are basically stable.

[0075] An iterative simulation experiment is performed on the initial field after switching until the second monitoring convergence condition is met and the iteration is terminated to obtain a second initial field; the second monitoring convergence condition is that the Stop Criterion of the gas concentration is less than the first set threshold (the first set threshold can be selected as 1e-3) and the Stop Criterion of the average current density is less than the second set threshold (the second set threshold can be selected as 1e-4).

[0076] The temperature field is added to the calculation by executing the tui command " / solve / set / equations / temperature yes". This step can also be regarded as the coupling of the temperature field in the decoupled state with other fields.

[0077] A temperature field is added to the second initial field by executing the tui command " / solve / set / equations / temperature yes", to obtain a processed second initial field.

[0078] A third monitoring convergence condition is added by continuing to add / edit the / solve / execute-commands, and the third monitoring convergence condition is that the ratio of the net energy source to the total heat source of the stack is less than a certain set value (as described above, for a stack layer number less than or equal to 40 layers, the third set threshold value can be taken as 0.1%), at which time the temperature field calculation is basically stable. At this point, the SOC stack simulation calculation is completed.

[0079] An iterative simulation experiment is performed on the processed second initial field until the third monitoring convergence condition is met, and the simulation result is obtained; the third monitoring convergence condition is that the ratio of the net energy source to the total heat source of the stack is less than a third set threshold value.

[0080] Embodiment 2

[0081] A computer system comprises a memory, a processor, and a computer program stored on the memory and executable on the processor, and the processor executes the computer program to implement the steps of the solid oxide cell stack full coupling simulation method in embodiment 1.

[0082] Embodiment 3

[0083] A computer readable storage medium has a computer program stored thereon, and the computer program is executed by a processor to implement the steps of the solid oxide cell stack full coupling simulation method in embodiment 1.

[0084] Embodiment 4

[0085] A computer program product comprises a computer program, and the computer program is executed by a processor to implement the steps of the solid oxide cell stack full coupling simulation method in embodiment 1.

[0086] Advantages of the present application:

[0087] 1. The SOC stack simulation process automation of any number of layers can be realized, and the geometric model adopted is a high-precision industrial-grade size stack model without any simplification, as shown in Figure 3 and Figure 4 Therefore, the simulation result obtained by the present application is more close to the real situation in principle.

[0088] 2. The multi-physical field full coupling simulation simulation of the real three-dimensional model is adopted, without any decoupling or simplification of the physical field, so the result is also closer to the actual model.

[0089] 3. The geometric modeling and meshing of the model support parameterization of all geometric feature edges, ensuring maximum freedom in model construction.

[0090] 4. It can significantly shorten the debugging time for modeling and simulation calculations, and provides default optimal grid configuration and calculation-related parameters to facilitate researchers to quickly reproduce simulation results.

[0091] 5. Supports the simulation of flat-plate SOFC and SOEC stacks in the same modeling system, broadening the application value of the tool.

[0092] It should be noted that the object information (including but not limited to object device information, object personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in the present invention are all information and data authorized by the object or fully authorized by all parties, and the collection, use and processing of relevant data must comply with the relevant laws, regulations and standards of relevant countries and regions.

[0093] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, the processes of the above-mentioned embodiments of the methods can be included. Any reference to memory, database or other medium used in the embodiments provided by the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided by the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided by the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0094] Any combination of the technical features of the above embodiments can be made. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combination of the technical features does not exist, it should be considered as the scope of the present application.

[0095] The principles and implementation modes of the present application are described by using specific examples. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation mode and application range can be changed. In conclusion, the content of the present application should not be understood as a limitation.

Claims

1. A fully coupled simulation method for a solid oxide battery stack, characterized in that: The fully coupled simulation method for the solid oxide battery stack includes: Obtain the number of battery layers and geometrical components of the solid oxide battery stack; Creating a geometric model of a solid oxide battery stack based on the number of battery stack layers and geometric component units; Meshing the geometric model to obtain a meshed geometric model; The meshed geometric model is automatically simulated based on the step-by-step coupling calculation strategy to obtain simulation results, including: The gridded geometric model is automatically simulated based on the step-by-step coupling calculation strategy through the Ansys Fluent tui command to obtain the simulation results; The meshed geometric model is automatically simulated using the Ansys Fluent tui command based on a step-by-step coupling calculation strategy to obtain simulation results, including: Use the / define / models related tui commands to set the physical fields of the meshed geometric model to obtain the geometric model after the physical fields are set; Use the / define / materials related tui command to set the battery stack material properties of the geometric model after the physical field is set to obtain the geometric model after the battery stack material is set; Use the / define / boundary-conditions related tui command to set the initial boundary conditions of the battery stack of the geometric model after the battery stack material is set, and obtain the geometric model after the initial boundary conditions are set; An iterative simulation experiment is performed on the geometric model after the initial boundary conditions are set until the first monitoring convergence condition is met and the iteration ends to obtain the initial field; the first monitoring convergence condition is that the stop criterion of the gas concentration is less than a first set threshold; Switch the electrochemical boundary conditions of the initial field to the actual working conditions through the / define / boundary-conditions related tui command to obtain the initial field after switching; the electrochemical boundary conditions include the potential boundary and the electrochemical component mass source term; An iterative simulation experiment is performed on the initial field after switching until the second monitoring convergence condition is met and the iteration ends to obtain a second initial field; the second monitoring convergence condition is: the Stop Criterion of the gas concentration is less than the first set threshold and the Stop Criterion of the average current density is less than the second set threshold; By executing the tui command " / solve / set / equations / temperature yes", the temperature field is added to the second initial field to obtain the processed second initial field; An iterative simulation experiment is performed on the processed second initial field until the iteration is terminated when a third monitoring convergence condition is met, and a simulation result is obtained; the third monitoring convergence condition is that the ratio of the net energy source to the total heat source of the fuel cell stack is less than a third set threshold.

2. The fully coupled simulation method for a solid oxide battery stack according to claim 1, characterized in that: A geometric model of the solid oxide battery stack is created based on the number of battery stack layers and geometric component units, specifically including: The geometric model of the solid oxide battery stack is created based on the number of battery stack layers and geometric component units using Ansys SpaceClaim scripting function.

3. The fully coupled simulation method for a solid oxide battery stack according to claim 2, characterized in that: The geometric model of the solid oxide battery stack is created based on the number of battery stack layers and geometric components using Ansys SpaceClaim scripting, including: Use Python scripts to create a single-layer battery stack based on the periodicity and geometric composition of the battery stack structure; Combine single-layer stacks according to the periodicity of the stack structure to create a multi-layer stack geometric model; Naming each component in the multi-layer battery stack geometric model based on the position attribute of each component in the multi-layer battery stack geometric model to obtain the multi-layer battery stack geometric model after the component is named; The edge sets of the multilayer battery stack geometric model after the components are named are named to obtain the geometric model of the solid oxide battery stack.

4. The fully coupled simulation method for a solid oxide battery stack according to claim 1, characterized in that: Meshing the geometric model to obtain a meshed geometric model specifically includes: The geometric model is meshed by using the Ansys Workbench Meshing scripting function to obtain a meshed geometric model.

5. The fully coupled simulation method for a solid oxide battery stack according to claim 4, characterized in that: The geometric model is meshed using the Ansys Workbench Meshing scripting function to obtain a meshed geometric model, specifically including: Determine the type of different regions in the geometric model based on the FluidSolidPhase property of the Body object; the type includes fluid or solid; Modifying the properties of different regions in the geometric model according to the types of different regions in the geometric model to obtain a modified geometric model; Using the AddAutomaticMethod method of the Mesh object, local mesh settings are performed on the components of the modified geometric model to obtain the component local mesh settings; Performing local mesh settings on the edge set of the modified geometric model using the AddSizing method of the Mesh object to obtain the local mesh settings of the edge set; The modified geometric model is meshed using the Mesh Order Worksheet based on the edge set local mesh settings and the component local mesh settings to obtain a meshed geometric model.

6. A computer system comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the fully coupled simulation method for a solid oxide battery stack according to any one of claims 1 to 5.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the solid oxide battery stack fully coupled simulation method according to any one of claims 1 to 5 are implemented.

8. A computer program product comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the solid oxide battery stack fully coupled simulation method according to any one of claims 1 to 5 are implemented.

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