Switching circuit, power integrated module and vehicle

Abstract

The present invention discloses a switching circuit, a power integrated module and a vehicle, which are applied to the technical field of electronic power devices, wherein the switching circuit includes at least one bridge arm circuit; each bridge arm circuit includes an upper bridge arm switch module and a lower bridge arm switch module; the upper bridge arm switch module and the lower bridge arm switch module are connected in series between a first power supply terminal and a second power supply terminal, and at least one of the upper bridge arm switch module and the lower bridge arm switch module includes a first switch element and a second switch element, and the semiconductor types of the first switch element and the second switch element are inconsistent. The technical solution of the present invention simultaneously seals different required switch elements in a single power integrated module, combines the advantages of low switching loss and strong large current conduction capability of different switch elements, avoids the weaknesses of insufficient conduction capability, high cost and large switching loss of each device, and realizes a low-cost and high-efficiency module solution on the premise of being compatible with the original single structure.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic power devices, and in particular to a switch circuit, a power integrated module and a vehicle. Background Art

[0002] The types of power modules currently used in new energy vehicles mainly include third-generation semiconductor power devices such as SiC MOSFET and second-generation semiconductor power devices such as Si IGBT. These semiconductor power devices have their own advantages and disadvantages. The following takes SiC MOSFET and Si IGBT as examples to introduce the advantages and disadvantages of the above semiconductor power devices. Figure 1 and Figure 2 As shown in the figure, SiC has no forward turn-on voltage, low voltage drop at low current, and small conduction loss, but its conduction loss at high current is not as good as that of IGBT; SiC's switching loss is smaller than that of IGBT at all currents, so the power module using SiC and / or IGBT integration has the following characteristics:

[0003] like Figure 3 As shown, SiC power modules have the advantages of low switching loss and high efficiency, but they are relatively expensive. In order to meet the power requirements of the entire vehicle, the SiC content of modules using pure SiC solutions is relatively large, resulting in extremely high costs.

[0004] like Figure 4 As shown, the IGBT power module has the advantages of high current capability and low cost. However, due to the forward conduction voltage of the IGBT chip, the conduction loss is large at low current, and the switching efficiency is limited by its tail current.

[0005] like Figure 5 As shown, SiC and IGBT parallel power modules can achieve the goal of taking into account both small and medium current efficiency and peak current capability by controlling the switching sequence. However, this solution uses two modules, which has high packaging costs, large space occupancy, reduced power density, increased flow resistance of the water-cooled radiator, and poor heat dissipation effect. Summary of the invention

[0006] The main purpose of the present invention is to propose a switching circuit, which aims to simultaneously encapsulate different required switching elements through a single power integrated module, combine the advantages of low switching loss and strong large current conduction capability of different switching elements, avoid the weaknesses of insufficient conduction capability, high cost and large switching loss of each device, and realize a low-cost and high-efficiency module solution while being compatible with the original single structure.

[0007] To achieve the above object, the switch circuit proposed in the present invention includes:

[0008] Each of the bridge arm circuits comprises an upper bridge arm switch module and a lower bridge arm switch module;

[0009] The upper bridge arm switch module and the lower bridge arm switch module are connected in series between a first power supply terminal and a second power supply terminal. At least one of the upper bridge arm switch module and the lower bridge arm switch module includes a first switch element and a second switch element. The semiconductor types of the first switch element and the second switch element are inconsistent.

[0010] In one embodiment, the device type of the first switch element and / or the second switch element includes GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET;

[0011] The semiconductor material of the first switch element and / or the second switch element includes SiC, Si, and GaN;

[0012] The semiconductor type of the first switching element and / or the second switching element is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET and any one of SiC, Si, GaN.

[0013] In one embodiment, the first switching element is a SiC MOSFET, and the second switching element is a Si IGBT.

[0014] In one embodiment, the upper bridge arm switch module and / or the lower bridge arm switch module further includes a third switch element, which is connected in parallel with the first switch element and the second switch element of the corresponding bridge arm switch module, and the semiconductor types of the first switch element, the second switch element and the third switch element are different from each other.

[0015] In addition, to achieve the above-mentioned purpose, the present invention further proposes a power integrated module, comprising a substrate and the switching circuit as described above, wherein the switching circuit is integrated on the substrate.

[0016] In one embodiment, the power integration module further includes:

[0017] A driving circuit, used for driving the switch circuit to be turned on or off;

[0018] A control circuit, electrically connected to the drive circuit and the switch circuit respectively;

[0019] The control circuit is used to receive the current pulse signal and control the drive circuit to drive the switch circuit to turn on or off according to the received current pulse signal.

[0020] In one embodiment, the control circuit is further used to control the first switch element of the switch circuit to turn on when receiving a small current small pulse signal, and the small current small pulse signal is a high level signal;

[0021] And / or, used to control the first switch element to turn off when a small current small pulse signal is received, and the small current small pulse signal is a low level signal.

[0022] In one embodiment, the current range of the small current small pulse signal is 0-100A, and the pulse range is 0-20%.

[0023] In one embodiment, the control circuit is further used to control the first switch element of the switch circuit to turn on when receiving the medium current medium pulse signal, and the medium current medium pulse signal is a high level signal, and after a delay of a first preset time length, control the second switch element of the switch circuit to turn on;

[0024] And / or, used to control the second switch element to turn off when a medium current medium pulse signal is received, and the medium current medium pulse signal is a low level signal, and control the first switch element to turn off after a delay of a first preset time.

[0025] In one embodiment, the medium current medium pulse signal has a current range of 100-300A and a pulse range of 20-60%.

[0026] In one embodiment, the control circuit is further used to control the second switch element of the switch circuit to turn on when receiving the first large current large pulse signal, and when the first large current large pulse signal is a high level signal, and after delaying for a second preset time length, control the first switch element of the switch circuit to turn on;

[0027] And / or, used to control the first switch element to turn off when a first large current and large pulse signal is received, and the first large current and large pulse signal is a low level signal, and control the second switch element to turn off after a delay of a second preset time.

[0028] In one embodiment, the current range of the first large current large pulse signal is 300-600A, and the pulse range is 60-90%.

[0029] In one embodiment, the control circuit is further configured to control the second switch element of the switch circuit to be turned on when receiving a second large current large pulse signal, and the second large current large pulse signal is a high level signal;

[0030] And / or, used to control the second switch element to turn off when a second large current large pulse signal is received and the second large current large pulse signal is a low level signal.

[0031] In one embodiment, the current range of the second large current large pulse signal is 600-707A, and the pulse range is 90-100%.

[0032] In one embodiment, the switch circuit has a plurality of bridge arm circuits, and the plurality of bridge arm circuits are arranged in parallel and arranged sequentially along a first direction on the substrate.

[0033] In one embodiment, a plurality of upper bridge arm switch modules of the bridge arm circuits are arranged side by side along a first direction, and a plurality of lower bridge arm switch modules of the bridge arm circuits are arranged side by side along the first direction.

[0034] In one embodiment, the upper bridge arm switch module and the lower bridge arm switch module of the same bridge arm circuit are arranged at intervals along a second direction, and the second direction intersects with the first direction.

[0035] In one embodiment, the upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side along the first direction;

[0036] And / or, the lower bridge arm switch module of each of the bridge arm circuits includes a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side along the first direction.

[0037] In one embodiment, the upper bridge arm switch module and the lower bridge arm switch module of each of the bridge arm circuits are arranged side by side and adjacent to each other along the first direction.

[0038] In one embodiment, the upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side and adjacent to each other along the first direction;

[0039] And / or, the lower bridge arm switch module of each of the bridge arm circuits includes a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side and adjacent to each other along the first direction.

[0040] In one embodiment, the substrate includes a first sub-substrate and a second sub-substrate, a plurality of upper bridge arm switch modules of the bridge arm circuit are arranged on the first sub-substrate, and a plurality of lower bridge arm switch modules of the bridge arm circuit are arranged on the second sub-substrate.

[0041] In one embodiment, the upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side along the first direction;

[0042] And / or, the lower bridge arm switch module of each of the bridge arm circuits includes a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side along the first direction.

[0043] In one embodiment, the substrate includes a board body and a conductive layer disposed on one side of the board body, and the switch circuit is disposed on the conductive layer.

[0044] In one embodiment, the output end of the first switch element, the output end of the second switch element and the output end of the third switch element of the switch circuit are welded or sintered on the conductive layer;

[0045] The connection end of the first switch element is connected to the conductive layer via a copper sheet;

[0046] The input end of the first switch element, the input end and the connection end of the second switch element, and the input end of the third switch element are all connected to the conductive layer via aluminum wires.

[0047] In one embodiment, a thermistor is disposed on the conductive layer, the thermistor, the first switch element, and the second switch element are spaced apart along the third direction, and the thermistor is electrically connected to a drive circuit of the power integrated module.

[0048] In one embodiment, a Pin is further provided on the conductive layer, and the Pin is electrically connected to the driving circuit;

[0049] The input end of the first switch element, the input end and the connection end of the second switch element, and the input end of the third switch element are connected to the Pin needle in sequence through an aluminum wire and a conductive layer;

[0050] The thermistor is connected to the Pin needle through the conductive layer.

[0051] In one embodiment, the substrate, the copper sheet, the aluminum wire, and the non-connected section of the Pin needle are packaged with an insulating member.

[0052] In one embodiment, the power integrated module further includes a heat dissipation base plate, the conductive layer includes a first conductive layer and a second conductive layer, and the switching circuit, the first conductive layer, the substrate, the second conductive layer and the heat dissipation base plate are stacked in sequence along a fourth direction.

[0053] In one embodiment, the power integrated module further includes a packaging shell, which is disposed on the heat dissipation base plate and surrounds the substrate, and the packaging shell is connected to the substrate.

[0054] In addition, to achieve the above-mentioned purpose, the present invention also proposes a vehicle, comprising the switching circuit as described above; and / or, the power integrated module as described above.

[0055] The technical solution of the present invention is to set a switch circuit, a power integrated module and a vehicle, wherein the switch circuit includes at least one bridge arm circuit; each bridge arm circuit includes an upper bridge arm switch module and a lower bridge arm switch module; the upper bridge arm switch module and the lower bridge arm switch module are connected in series between a first power supply terminal and a second power supply terminal, and at least one of the upper bridge arm switch module and the lower bridge arm switch module includes a first switch element and a second switch element, and the semiconductor types of the first switch element and the second switch element are inconsistent. The technical solution of the present invention simultaneously seals the required different switch elements in a single power integrated module, combines the advantages of low switching loss and strong large current conduction capability of different switch elements, avoids the weaknesses of insufficient conduction capability, high cost and large switching loss of each device, and realizes a low-cost and high-efficiency module solution on the premise of being compatible with the original single structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0057] Figure 1 A comparison diagram of the on-state current and on-state voltage drop of SiC modules and IGBT modules in the prior art;

[0058] Figure 2 A comparison diagram of switching loss and current of SiC modules and IGBT modules in the prior art;

[0059] Figure 3 is a circuit diagram of a SiC power module in the prior art;

[0060] Figure 4 It is a circuit diagram of an IGBT power module in the prior art;

[0061] Figure 5 The circuit diagram of the SiC and IGBT parallel power module in the prior art;

[0062] Figure 6 A circuit diagram of an embodiment of a switch circuit of the present invention;

[0063] Figure 7 A schematic diagram of a circuit function module of an embodiment of a switch circuit of the present invention;

[0064] Figure 8 A timing diagram of an embodiment of a power integrated module of the present invention;

[0065] Fig. 9 A timing diagram of another embodiment of the power integrated module of the present invention;

[0066] Fig.10 A timing diagram of another embodiment of the power integrated module of the present invention;

[0067] Fig.11 A timing diagram of another embodiment of the power integrated module of the present invention;

[0068] Fig.12 A layout diagram of an embodiment of a power integrated module of the present invention;

[0069] Fig.13 A layout diagram of another embodiment of the power integrated module of the present invention;

[0070] Fig.14 A layout diagram of another embodiment of the power integrated module of the present invention;

[0071] Fig.15 A layout diagram of another embodiment of the power integrated module of the present invention;

[0072] Fig.16 It is a schematic structural diagram of an embodiment of a power integrated module of the present invention;

[0073] Fig.17 It is a structural schematic diagram of another embodiment of the power integrated module of the present invention;

[0074] Fig.18 FIG. 4 is a schematic structural diagram of another embodiment of a power integrated module of the present invention.

[0075] Description of Figure Numbers:

[0076]

[0077] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0078] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0079] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0080] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0081] It is understandable that the motor is the core component of the drive system of new energy vehicles, and its working efficiency directly affects the driving performance and cruising range of the vehicle. The higher the motor efficiency, the longer the car can be driven with the same amount of electricity, which helps to improve the car's cruising range. The existing technology mainly improves the efficiency of electric drive through power modules, and uses the conduction and switching dimensions of the power module to reduce energy loss and improve efficiency, thereby achieving the purpose of increasing the cruising range of new energy electric vehicles. Since the current national light vehicle driving conditions are CLTC, and the CLTC conditions are medium and low current conditions, what needs to be improved is the efficiency of the power module under small and medium currents. It is also worth noting that the capacity of the power module also determines the power of the entire vehicle, that is, it determines the acceleration ability of the entire vehicle, so the entire vehicle also has high requirements for the maximum current capacity of the power module.

[0082] The types of power modules currently used in new energy vehicles mainly include third-generation semiconductor power devices such as SiC MOSFET and second-generation semiconductor power devices such as Si IGBT. These semiconductor power devices have their own advantages and disadvantages. The following takes SiC MOSFET and Si IGBT as examples to introduce the advantages and disadvantages of the above semiconductor power devices. Figure 1 and Figure 2 As shown in the figure, SiC has no forward turn-on voltage, low voltage drop at low current, and small conduction loss, but its conduction loss at high current is not as good as that of IGBT; SiC's switching loss is smaller than that of IGBT at all currents, so the power module using SiC and / or IGBT integration has the following characteristics:

[0083] like Figure 3 As shown, SiC power modules have the advantages of low switching loss and high efficiency, but they are relatively expensive. In order to meet the power requirements of the entire vehicle, the SiC content of modules using pure SiC solutions is relatively large, resulting in extremely high costs.

[0084] like Figure 4 As shown, the IGBT power module has the advantages of high current capability and low cost. However, due to the forward conduction voltage of the IGBT chip, the conduction loss is large at low current, and the switching efficiency is limited by its tail current.

[0085] like Figure 5 As shown, SiC and IGBT parallel power modules can achieve the goal of taking into account both small and medium current efficiency and peak current capability by controlling the switching sequence. However, this solution uses two modules, which has high packaging costs, large space occupancy, reduced power density, increased flow resistance of the water-cooled radiator, and poor heat dissipation effect.

[0086] In order to improve the above situation, the present invention proposes a switching circuit 100 for a power integrated module 10, aiming to simultaneously encapsulate the required different switching elements in a single power integrated module 10, combining the advantages of low switching loss and strong large current conducting capability of different switching elements, avoiding the weaknesses of insufficient conducting capability, high cost and large switching loss of each device, and realizing a low-cost and high-efficiency module solution while being compatible with the original single structure.

[0087] In one embodiment of the present invention, referring to Figure 6 , the switch circuit 100 includes at least one bridge arm circuit 110;

[0088] Each of the bridge arm circuits 110 includes an upper bridge arm switch module 110a and a lower bridge arm switch module 110b;

[0089] The upper bridge arm switch module 110a and the lower bridge arm switch module 110b are connected in series between a first power supply terminal DC+ and a second power supply terminal DC-, and at least one of the upper bridge arm switch module 110a and the lower bridge arm switch module 110b includes a first switch element 111 and a second switch element 112, and the semiconductor types of the first switch element 111 and the second switch element 112 are inconsistent.

[0090] In this embodiment, the switch circuit 100 includes at least one bridge arm circuit 110, that is, the switch circuit 100 may include one bridge arm circuit 110, or may include two bridge arm circuits 110, or may include three bridge arm circuits 110, and the specific number is not particularly limited here. Specifically, each bridge arm circuit 110 includes an upper bridge arm switch module 110a and a lower bridge arm switch module 110b, and the upper bridge arm switch module 110a and the lower bridge arm switch module 110b of each bridge arm circuit 110 are connected in series to the first power supply terminal DC+ and the second power supply terminal DC-, so as to receive the DC voltage output by the first power supply terminal DC+ and the second power supply terminal DC-; the output end of the upper bridge arm switch module 110a and the output end of the lower bridge arm switch module 110b of each bridge arm circuit 110 are used to connect the load respectively, and the load is a motor, and in the working state, the received DC voltage is converted into an AC voltage and then output to the motor to drive the motor to rotate.

[0091] Optionally, at least one of the upper arm switch module 110 a and the lower arm switch module 110 b of each bridge arm circuit 110 includes a first switch element 111 and a second switch element 112 , wherein the semiconductor types of the first switch element 111 and the second switch element 112 are inconsistent. That is to say, the upper bridge arm switch module 110a of a bridge arm circuit 110 may include a first switch element 111 and a second switch element 112, and the corresponding lower bridge arm switch module 110b of the bridge arm circuit 110 may also include a first switch element 111 and a second switch element 112; or, the upper bridge arm switch module 110a of a bridge arm circuit 110 may include a first switch element 111 and a second switch element 112, and the corresponding lower bridge arm switch module 110b of the bridge arm circuit 110 may only include a first switch element 111 or a second switch element 112; or, the lower bridge arm switch module 110b of a bridge arm circuit 110 may include a first switch element 111 and a second switch element 112, and the corresponding upper bridge arm switch module 110a of the bridge arm circuit 110 may only include a first switch element 111 or a second switch element 112.

[0092] In this embodiment, the upper bridge arm switch module 110a and the lower bridge arm switch module 110b of each bridge arm circuit 110 respectively include a first switch element 111 and a second switch element 112, and the semiconductor types of the first switch element 111 and the second switch element 112 of the upper bridge arm switch module 110a and the lower bridge arm switch module 110b of each bridge arm circuit 110 must be different, so as to combine the advantages of different switch elements and avoid the weaknesses of insufficient conduction capability, high cost and large switching loss of each device, thereby improving the switching efficiency of the switch circuit 100 of the present application, and then improving the driving efficiency and current capacity of the vehicle.

[0093] Optionally, the device type of the first switch element 111 and / or the second switch element 112 may be one of a gate turn-off thyristor (GTO), a power transistor (GTR), a field effect transistor (MOSFET), a conductivity modulated field effect transistor (COMFET), a high electron mobility transistor (HEMT), a static induction transistor (SIT), an insulated gate bipolar transistor (IGBT), an integrated gate commutated thyristor (IGCT) and a junction field effect transistor (JFET). These devices may be made of semiconductor materials such as silicon carbide (SiC), silicon (Si) and gallium (GaN) to form second-generation semiconductor power devices such as Si IGBT or third-generation semiconductor power devices such as SiC MOSFET and GaN HEMT.

[0094] Since the most commonly used semiconductor power devices in the power modules of current new energy vehicles are SiC MOSFET, SiIGBT and GaN HEMT, their conduction capabilities are from high to low in the order of Si IGBT, SiC MOSFET and GaN HEMT; the switching losses are from low to high in the order of GaN HEMT, SiC MOSFET and Si IGBT; the costs are from low to high in the order of Si IGBT, GaN HEMT and SiC MOSFET. Therefore, in order to better combine the advantages of the above-mentioned switching devices, the upper arm switch module 110a and the lower arm switch module 110b of each bridge arm circuit 110 of this embodiment only include a first switch element 111 and a second switch element 112, wherein the first switch element 111 adopts SiC MOSFET is used to realize it, and the second switching element 112 is realized by SiIGBT, thereby combining the advantages of low switching loss and high efficiency of SiC power module and strong large current capability and low cost of IGBT power module, avoiding the weakness of high cost caused by large SiC dosage of modules using pure SiC solution, and avoiding the characteristic of large conduction loss at small current caused by forward conduction voltage of IGBT power module, and realizing low-cost and high-efficiency module solution under the premise of being compatible with the original single switch circuit 100 structure.

[0095] The technical solution of the present invention is provided by setting a switch circuit 100, a power integrated module 10 and a vehicle, wherein the switch circuit 100 includes at least one bridge arm circuit 110; each bridge arm circuit 110 includes an upper bridge arm switch module 110a and a lower bridge arm switch module 110b; the upper bridge arm switch module 110a and the lower bridge arm switch module 110b are connected in series between the first power supply terminal DC+ and the second power supply terminal DC-, and at least one of the upper bridge arm switch module 110a and the lower bridge arm switch module 110b includes a first switch element 111 and a second switch element 112, and the semiconductor types of the first switch element 111 and the second switch element 112 are inconsistent. The technical solution of the present invention simultaneously seals the required different switch elements in a single power integrated module 10, combines the advantages of low switching loss and strong large current conduction capability of different switch elements, avoids the weaknesses of insufficient conduction capability, high cost and large switching loss of each device, and realizes a low-cost and high-efficiency module solution on the premise of being compatible with the original single structure.

[0096] Optionally, in one embodiment of the present invention, referring to Figure 6 , the device types of the first switch element 111 and / or the second switch element 112 include GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, and JFET;

[0097] The semiconductor material of the first switch element 111 and / or the second switch element 112 includes SiC, Si, and GaN;

[0098] The semiconductor type of the first switching element 111 and / or the second switching element 112 is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET and any one of SiC, Si, GaN.

[0099] Optionally, the device type of the first switch element 111 and / or the second switch element 112 of each bridge arm circuit 110 may include but is not limited to GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET, and the semiconductor material of the first switch element 111 and / or the second switch element 112 of each bridge arm circuit 110 may include but is not limited to SiC, Si, and GaN. In this embodiment, the semiconductor type of the first switch element 111 and / or the second switch element 112 of each bridge arm circuit 110 is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, and JFET and any one of SiC, Si, and GaN.

[0100] Optionally, in one embodiment of the present invention, referring to Figure 6 The first switch element 111 of each bridge arm circuit 110 is a SiC MOSFET, and the second switch element 112 of each bridge arm circuit 110 is a Si IGBT. The switching efficiency of the switch circuit 100 is improved, while the cost of the switch circuit 100 is reduced, by utilizing the low switching loss and low efficiency of the SiC power module and the high current capability and low cost of the IGBT power module, thereby realizing a low-cost and high-efficiency module solution.

[0101] Optionally, in one embodiment of the present invention, referring to Figure 6 and Fig.15 The upper bridge arm switch module 110a and / or the lower bridge arm switch module 110b further includes a third switch element 113, and the third switch element 113 is connected in parallel with the first switch element 111 and the second switch element 112 of the corresponding bridge arm switch module, and the semiconductor types of the first switch element 111, the second switch element 112 and the third switch element 113 are different from each other.

[0102] In this embodiment, the upper arm switch module 110a and the lower arm switch module 110b of each bridge arm circuit 110 further include a third switch element 113. The third switch element 113 is implemented by a diode, which is respectively connected in parallel with the first switch element 111 and the second switch element 112 of the corresponding bridge arm switch module, and is mainly used to stabilize the voltage output by the switch circuit 100. Optionally, the model and source of the diode are not limited here, and can be set according to the demand for voltage stabilization.

[0103] The present invention further provides a power integrated module 10, which includes a substrate 200 and a switch circuit 100. The specific structure of the switch circuit 100 refers to the above embodiment. Since the power integrated module 10 adopts all the technical solutions of all the above embodiments, it at least has all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described one by one here. The switch circuit 100 is integrated on the substrate 200.

[0104] Optionally, in one embodiment of the present invention, referring to Figure 6 and Figure 7 , the power integrated module 10 further includes:

[0105] A driving circuit 300, used to drive the switch circuit 100 to turn on or off;

[0106] The control circuit 400 is electrically connected to the driving circuit 300 and the switch circuit 100 respectively;

[0107] The control circuit 400 is used to receive the current pulse signal and control the drive circuit 300 to drive the switch circuit 100 to turn on or off according to the received current pulse signal.

[0108] In this embodiment, the driving board is implemented by a driving board, and the driving board is connected to the switch circuit 100 to drive the switch circuit 100 to turn on or off. The control circuit 400 is implemented by a control chip such as a controller or an MCU. The control circuit 400 is implemented by a control chip, which has the characteristics of small size, and can effectively reduce the volume of the power integrated module 10, so that the power integrated module 10 is easy to be installed in the whole vehicle. The first control end and the second control end of the control chip are respectively connected to the controlled end of the driving circuit 300 and the controlled end of the switch circuit 100, and are used to receive the current pulse signal output by the whole vehicle, and control the driving circuit 300 to drive the switch circuit 100 to turn on or off according to the received current pulse signal.

[0109] It is worth noting that the current pulse signal of the present embodiment specifically refers to the DC voltage signal output by the vehicle, wherein the DC voltage signal may include a small current small pulse signal, a medium current medium pulse signal, a first large current large pulse signal, and a second large current large pulse signal. It should be noted that the current range and pulse range of the small current small pulse signal, the medium current medium pulse signal, the first large current large pulse signal, and the second large current large pulse signal are mainly related to the semiconductor type of the first switching element 111 and the second switching element 112. When the semiconductor type of the first switching element 111 and the second switching element 112 changes, the current range and pulse range of the small current small pulse signal, the medium current medium pulse signal, the first large current large pulse signal, and the second large current large pulse signal that the first switching element 111 and the second switching element 112 need to turn on or off will also change accordingly.

[0110] It can be seen from the above embodiments that the first switch element 111 of the switch circuit 100 is implemented by SiC MOSFET, and the second switch element 112 of the switch circuit 100 is implemented by Si IGBT, so the power integrated module 10 of this embodiment is respectively provided with a first control mode, a second control mode, a third control mode and a fourth control mode according to the on and off characteristics of SiC MOSFET and Si IGBT.

[0111] Taking the peak current of the switch circuit 100 of this embodiment as 500 Arms as an example, using the characteristic that the peak value of the sinusoidal current is 1.414 times the rms value, the current range of the switch circuit 100 is 500×1.414=707A.

[0112] like Figure 8As shown, optionally, in one embodiment of the present invention, in the first control mode, the control circuit 400 receives a small current small pulse signal, wherein the current range of the small current small pulse signal is 0-100A and the pulse range is 0-20%.

[0113] It should be noted that the small current and small pulse signal can be a low-level signal, the corresponding current range can be set to 0-50A, and the pulse range can be set to 0-10%, or it can be a high-level signal, the corresponding current range can be set to 50-100A, and the pulse range can be set to 10-20%.

[0114] When the small current and small pulse signal received by the control circuit 400 is a high level signal, only the SiC MOSFET of the switch circuit 100 is turned on; when the small current and small pulse signal received by the control circuit 400 is a low level signal, only the SiC MOSFET of the switch circuit 100 is turned off. The switching loss of the switch circuit 100 is reduced by utilizing the characteristics of SiC MOSFET in terms of strong small current capability and low switching loss.

[0115] like Fig. 9 As shown, optionally, in one embodiment of the present invention, in the second control mode, the control circuit 400 receives a medium current medium pulse signal, wherein the medium current medium pulse signal has a current range of 100-300A and a pulse range of 20-60%.

[0116] It should be noted that the medium current medium pulse signal can also be a low-level signal, and the corresponding current range can be set to 100-200A and the pulse range can be set to 20-40%. It can also be a high-level signal, and the corresponding current range can be set to 200-300A and the pulse range can be set to 40-60%.

[0117] When the medium current medium pulse signal received by the control circuit 400 is a high level signal, the SiCMOSFET can be controlled to be turned on first, and the Si IGBT can be turned on after a first preset time t1 delay; when the medium current medium pulse signal received by the control circuit 400 is a low level signal, the Si IGBT can be controlled to be turned off first, and the SiC MOSFET can be turned off after a first preset time t1 delay. This is because the SiC MOSFET bears the conduction loss, and the voltage drop after turning on is very low. The Si IGBT is turned on at a near zero voltage after it is turned on, and when the Si IGBT is turned off, its current is transferred to the SiC MOSFET, and the forward voltage drop is very low. When the Si IGBT is turned off first, it is turned off at a near zero voltage. The Si IGBT only shares the conduction loss with the SiC MOSFET, and its switching loss is extremely low, that is, the Si IGBT is involved in parallel with the SiC MOSFET to reduce the conduction loss, making the efficiency higher, while reducing the SiC MOSFET loss and avoiding overheating.

[0118] It should be noted that the control circuit 400 controls the SiC MOSFET to turn on after the first preset time t1, or controls the Si IGBT to turn off after the first preset time t1, in order to ensure that the Si IGBT is turned on after the SiC MOSFET is fully turned on, or the SiC MOSFET is turned off after the Si IGBT is fully turned off. It can be seen that the duration range of the first preset duration t1 is usually related to the semiconductor type of the first switch element 111 and the second switch element 112.

[0119] In this embodiment, since the first switch element 111 is a SiC MOSFET and the second switch element 112 is a Si IGBT, considering the on and off characteristics of the SiC MOSFET and the Si IGBT, the duration range of the first preset duration t1 is 0-10 ms.

[0120] like Fig.10 As shown, optionally, in one embodiment of the present invention, in the third control mode, the control circuit 400 receives a first large current large pulse signal, wherein the current range of the first large current large pulse signal is 300-600A and the pulse range is 60-90%.

[0121] It should be noted that the first large current and large pulse signal can also be a low level signal, and the corresponding current range can be set to 300-450A and the pulse range can be set to 60-75%. It can also be a high level signal, and the corresponding current range can be set to 450-600A and the pulse range can be set to 75-90%.

[0122] When the first large current large pulse signal received by the control circuit 400 is a high level signal, the SiIGBT can be controlled to be turned on first, and the SiC MOSFET can be turned on after a delay of the second preset time t2; when the first large current large pulse signal received by the control circuit 400 is a low level signal, the SiC MOSFET can be controlled to be turned off first, and the Si IGBT can be turned off after a delay of the second preset time t2. This is because the Si IGBT bears the conduction loss, the voltage drop is low after the turn-on, and the SiC MOSFET is turned on after it is close to zero voltage. When the SiC MOSFET is turned off, its current is transferred to the Si IGBT, and the forward voltage drop is very low. When the SiC MOSFET is turned off first, it is close to zero voltage. It can be seen that the SiC MOSFET only shares the conduction loss with the Si IGBT, and the switching loss is extremely low, which reduces the loss of the SiC MOSFET, reduces the temperature rise of the SiC MOSFET, and improves the outflow capacity.

[0123] Based on the above, it can be known that the duration range of the second preset duration t2 is also related to the semiconductor types of the first switch element 111 and the second switch element 112. In this embodiment, the duration range of the second preset duration t2 is the same as the duration range of the first preset duration t1, specifically 0-10ms.

[0124] like Fig.11 As shown, optionally, in one embodiment of the present invention, in the fourth control mode, the control circuit 400 receives a second large current large pulse signal, wherein the current range of the second large current large pulse signal is 600-707A and the pulse range is 90-100%.

[0125] It should be noted that the second largest current large pulse signal can also be a low-level signal, the corresponding current range can be set to 600-650A, the pulse range can be set to 90-95%, and it can also be a high-level signal, the corresponding current range can be set to 650-707A, and the pulse range can be set to 95-100%.

[0126] When the second large current large pulse signal received by the control circuit 400 is a high level signal, only the Si IGBT of the switch circuit 100 is turned on; when the second large current large pulse signal received by the control circuit 400 is a low level signal, only the Si IGBT of the switch circuit 100 is turned off. The high current capability of the Si IGBT is utilized to reduce the loss of the SiC MOSFET and prevent it from overheating.

[0127] Optionally, in one embodiment of the present invention, referring to Fig.12 The switch circuit 100 has a plurality of bridge arm circuits 110 , and the plurality of bridge arm circuits 110 are arranged in parallel and arranged sequentially along a first direction on the substrate 200 .

[0128] Optionally, the number of the bridge arm circuits 110 may be 2 or 3, etc. In the present embodiment, the number of the bridge arm circuits 110 is set to 3. The three bridge arm circuits 110 are arranged in parallel. In order to reasonably layout the three bridge arm circuits 110 to reduce the volume of the power integrated module 10, in the present embodiment, the three bridge arm circuits 110 are arranged on the substrate 200 in sequence along the first direction, wherein the first direction is the length direction of the substrate 200. For example, the upper bridge arm switch modules 110a of the three bridge arm circuits 110 are arranged side by side along the first direction, and the lower bridge arm switch modules 110b of the three bridge arm circuits 110 are arranged side by side in the first direction; or, the upper bridge arm switch modules 110a of the three bridge arm circuits 110 are arranged side by side and adjacently along the first direction, and the lower bridge arm switch modules 110b of the three bridge arm circuits 110 are arranged side by side and adjacently along the first direction, and the specific situation is similar to the above situation, and no further elaboration is made here.

[0129] Optionally, in one embodiment of the present invention, referring to Fig.12 , multiple upper bridge arm switch modules 110a of the bridge arm circuit 110 are arranged side by side along the first direction, and multiple lower bridge arm switch modules 110b of the bridge arm circuit 110 are arranged side by side along the first direction.

[0130] In this embodiment, the number of the bridge arm circuits 110 is set to 3. The upper bridge arm switch modules 110a of the three bridge arm circuits 110 are arranged side by side along the first direction, and the lower bridge arm switch modules 110b of the three bridge arm circuits 110 are arranged side by side along the first direction. Such an arrangement can make the layout of the multiple bridge arm circuits 110 more reasonable, thereby reducing the volume of the substrate 200, and further reducing the volume of the power integrated module 10.

[0131] Optionally, in one embodiment of the present invention, referring to Fig.12 The upper bridge arm switch module 110a and the lower bridge arm switch module 110b of the same bridge arm circuit 110 are arranged at intervals along a second direction, and the second direction intersects with the first direction.

[0132] In this embodiment, the upper bridge arm switch module 110a and the lower bridge arm switch module 110b of the same bridge arm circuit 110 are arranged side by side along the second direction, wherein the second direction intersects with the first direction, and the second direction is specifically the width direction of the substrate 200. Such an arrangement can make the layout of the multiple bridge arm circuits 110 more reasonable, thereby reducing the volume of the substrate 200, and further reducing the volume of the power integrated module 10.

[0133] Optionally, in one embodiment of the present invention, referring to Fig.12 The upper bridge arm switch module 110a of each of the bridge arm circuits 110 includes a first switch element 111 and a second switch element 112. The first switch element 111 and the second switch element 112 of the upper bridge arm switch module 110a are arranged side by side along the first direction, so that the layout of the upper bridge arm switch module 110a of each of the bridge arm circuits 110 is more reasonable, reducing the occupied area of ​​each of the bridge arm circuits 110 on the substrate 200, and effectively reducing the volume of the switch circuit 100, that is, reducing the volume of the power integrated module 10.

[0134] Optionally, in one embodiment of the present invention, referring to Fig.12The lower bridge arm switch module 110b of each of the bridge arm circuits 110 includes a first switch element 111 and a second switch element 112. The first switch element 111 and the second switch element 112 of the lower bridge arm switch module 110b are arranged side by side along the first direction, so that the layout of the lower bridge arm switch module 110b of each of the bridge arm circuits 110 is more reasonable, and the occupied area of ​​each of the bridge arm circuits 110 on the substrate 200 can also be reduced, effectively reducing the volume of the switch circuit 100, that is, reducing the volume of the power integrated module 10.

[0135] Optionally, in one embodiment of the present invention, referring to Fig.13 The upper bridge arm switch module 110a and the lower bridge arm switch module 110b of each bridge arm circuit 110 are arranged side by side and adjacent to each other along the first direction to compress the volume of the switch circuit 100 in width, that is, to compress the volume of the power integrated module 10 in width.

[0136] Optionally, in one embodiment of the present invention, referring to Fig.13 The upper bridge arm switch module 110a of each of the bridge arm circuits 110 includes a first switch element 111 and a second switch element 112. The first switch element 111 and the second switch element 112 of the upper bridge arm switch module 110a are arranged side by side and adjacent to each other along the first direction, so that the layout of the upper bridge arm switch module 110a of each of the bridge arm circuits 110 is more reasonable, reducing the occupied area of ​​each of the bridge arm circuits 110 on the substrate 200, and effectively reducing the volume of the switch circuit 100, that is, reducing the volume of the power integrated module 10.

[0137] Optionally, in one embodiment of the present invention, referring to Fig.13 The lower bridge arm switch module 110b of each of the bridge arm circuits 110 includes a first switch element 111 and a second switch element 112. The first switch element 111 and the second switch element 112 of the lower bridge arm switch module 110b are arranged side by side and adjacent to each other along the first direction, so that the layout of the lower bridge arm switch module 110b of each of the bridge arm circuits 110 is more reasonable, and the occupied area of ​​each of the bridge arm circuits 110 on the substrate 200 can also be reduced, effectively reducing the volume of the switch circuit 100, that is, reducing the volume of the power integrated module 10.

[0138] Optionally, in one embodiment of the present invention, referring to Fig.14 The substrate 200 includes a first sub-substrate 200a and a second sub-substrate 200b, and the upper bridge arm switch modules 110a of the plurality of bridge arm circuits 110 are arranged on the first sub-substrate 200a, and the lower bridge arm switch modules 110b of the plurality of bridge arm circuits 110 are arranged on the second sub-substrate 200b.

[0139] In this embodiment, the substrate 200 includes a first sub-substrate 200a and a second sub-substrate 200b arranged side by side along the second direction, the upper bridge arm switch modules 110a of the multiple bridge arm circuits 110 are arranged on the first sub-substrate 200a, and the lower bridge arm switch modules of the multiple bridge arm circuits 110 are arranged on the second sub-substrate 200b, thereby improving the convenience of arranging each bridge arm circuit 110 and further improving the packaging efficiency of the power integrated module 10.

[0140] Optionally, in one embodiment of the present invention, referring to Fig.14 The upper bridge arm switch module 110a of each of the bridge arm circuits 110 includes a first switch element 111 and a second switch element 112. The first switch element 111 and the second switch element 112 of the upper bridge arm switch module 110a are arranged side by side along the first direction, so that the layout of the upper bridge arm switch module 110a of each of the bridge arm circuits 110 is more reasonable, reducing the occupied area of ​​each of the bridge arm circuits 110 on the first sub-substrate 200a, and effectively reducing the volume of the switch circuit 100, that is, reducing the volume of the power integrated module 10.

[0141] Optionally, in one embodiment of the present invention, referring to Fig.14 The lower bridge arm switch module 110b of each of the bridge arm circuits 110 includes a first switch element 111 and a second switch element 112. The first switch element 111 and the second switch element 112 of the lower bridge arm switch module 110b are arranged side by side along the first direction, so that the layout of the lower bridge arm switch module 110b of each of the bridge arm circuits 110 is more reasonable, reducing the occupied area of ​​each of the bridge arm circuits 110 on the second sub-substrate 200b, and effectively reducing the volume of the switch circuit 100, that is, reducing the volume of the power integrated module 10.

[0142] Optionally, in one embodiment of the present invention, referring to Figures 15 to 18 The substrate 200 includes a board body 210 and a conductive layer 220 disposed on one side of the board body 210 , and the switch circuit 100 is disposed on the conductive layer 220 .

[0143] Optionally, the substrate 200 may be a ceramic substrate 200 or a metal substrate 200. The ceramic substrate 200 is an electronic material with ceramic as the main component, and has the characteristics of high thermal conductivity, high insulation, low thermal expansion coefficient, etc., which can effectively improve the heat dissipation performance of the switch circuit 100 thereon, and improve the durability and reliability of the power integrated module 10. The metal substrate 200 may be an aluminum substrate 200, a copper substrate 200, or an iron substrate 200. When the power integrated module 10 of this embodiment is applied to a scene with low outflow capacity, the substrate 200 may be implemented by an aluminum substrate 200. Compared with the ceramic substrate 200, the aluminum substrate 200 has a lower cost, which can effectively reduce the cost of the power integrated module 10.

[0144] In this embodiment, the conductive layer 220 is implemented by conductive copper foil. The conductive copper foil as the conductive layer 220 on the board body 210 can provide lower resistance and faster signal transmission speed, thereby ensuring efficient connection and stable operation between the switch devices of the switch circuit 100.

[0145] Optionally, in one embodiment of the present invention, referring to Figures 15 to 18 , the output end of the first switch element 111, the output end of the second switch element 112 and the output end of the third switch element 113 of the switch circuit 100 are welded or sintered on the conductive layer 220;

[0146] The connection end of the first switch element 111 is connected to the conductive layer 220 via a copper sheet 500;

[0147] The input end of the first switch element 111 , the input end and the connection end of the second switch element 112 , and the input end of the third switch element 113 are all connected to the conductive layer 220 via an aluminum wire 600 .

[0148] It can be seen from the above embodiments that the first switch element 111 is implemented by SiC MOSFET, the second switch element 112 is implemented by Si IGBT, and the third switch element 113 is implemented by a diode.

[0149] In this embodiment, the output end, the connection end and the input end of the first switch element 111 are the drain, the gate and the source of the SiC MOSFET, respectively; the output end, the connection end and the input end of the second switch element 112 are the collector, the emitter and the base of the Si IGBT, respectively. The output end and the input end of the third switch element 113 are the anode and the cathode of the diode, respectively. The drain of the SiC MOSFET, the collector of the Si IGBT and the anode of the diode are all welded / sintered on the conductive layer 220, and the source of the SiC MOSFET is connected to the conductive layer 220 via the copper sheet 500, the emitter of the Si IGBT and the cathode of the diode are connected to the conductive layer 220 via the aluminum wire 600, and the gate and source of the SiC MOSFET and the base of the Si IGBT are all connected to the conductive layer 220 via the aluminum wire 600.

[0150] Optionally, in one embodiment of the present invention, referring to Figures 15 to 18 A thermistor 700 is disposed on the conductive layer 220 . The thermistor 700 , the first switch element 111 , and the second switch element 112 are spaced apart along a third direction. The thermistor 700 is electrically connected to the drive circuit 300 of the power integrated module 10 .

[0151] Optionally, in one embodiment of the present invention, a Pin 800 is further welded on the conductive layer 220, and the thermistor 700 is connected to the Pin 800 through the conductive copper layer. It can be seen from the above embodiment that the first switch element 111 of the switch circuit 100 is implemented by SiCMOSFET, and the second switch element 112 is implemented by Si IGBT. In this embodiment, the gate and source of the SiC MOSFET and the base of the Si IGBT are connected to the conductive layer 220 and the Pin 800 via the aluminum wire 600; the emitter of the Si IGBT is connected to the Pin 800 via the aluminum wire 600 and the conductive layer 220; the first power supply terminal DC+ is connected to the Pin via the aluminum wire 600 and the conductive layer 220.

[0152] Optionally, in one embodiment of the present invention, referring to Figures 15 to 18 The substrate 200 , the copper sheet 500 , the aluminum wire 600 and the non-connected section of the pin needle 800 are packaged with an insulating member 1100 .

[0153] Optionally, in one embodiment of the present invention, referring to Figures 15 to 18 The power integrated module 10 also includes a heat dissipation base plate 900, the conductive layer 220 includes a first conductive layer 221 and a second conductive layer 222, and the switch circuit 100, the first conductive layer 221, the substrate 200, the second conductive layer 222 and the heat dissipation base plate 900 are stacked in sequence along a fourth direction.

[0154] With such a configuration, the heat dissipation base plate 900 can dissipate heat from the switch circuit 100 on the substrate 200, so as to alleviate the problem of thermal expansion and contraction between the switch components of the switch circuit 100, and improve the durability and reliability of the switch circuit 100. Moreover, the switch circuit 100 can establish an electrical connection with the substrate 200 through the first conductive layer 221, and the heat dissipation base plate 900 can establish an electrical connection with the substrate 200 through the second conductive layer 222, thereby reducing the line connection of the power integrated module 10, thereby reducing the volume of the power integrated module 10, and making it easier to install in the vehicle.

[0155] Optionally, in one embodiment of the present invention, referring to Figures 15 to 18 The power integrated module 10 further includes a packaging shell 1000 , which is disposed on the heat dissipation base plate 900 and surrounds the substrate 200 , and the packaging shell 1000 is connected to the substrate 200 .

[0156] In this embodiment, the power integrated module 10 further includes a packaging shell 1000, which is an annular structure, and is attached to the heat dissipation base plate 900 by a sealant, and is disposed around the substrate 200. The packaging shell 1000 is connected to the substrate 200 on one side facing the substrate 200, so as to limit the substrate 200, and further limit the switch circuit 100 on the substrate 200, thereby improving the stability of the substrate 200 and the switch circuit 100 in installation.

[0157] The present invention also proposes a vehicle, which includes a switching circuit 100 and / or a power integrated module 10. The specific structures of the switching circuit 100 and the power integrated module 10 refer to the above-mentioned embodiments. Since the vehicle adopts all the technical solutions of all the above-mentioned embodiments, it has at least all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be repeated here one by one.

[0158] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the inventive concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A power integrated module, characterized in that: include: substrate; A switch circuit, wherein the switch circuit is integrated on the substrate; The switch circuit includes at least one bridge arm circuit; Each of the bridge arm circuits comprises an upper bridge arm switch module and a lower bridge arm switch module; The upper bridge arm switch module and the lower bridge arm switch module are connected in series between a first power supply terminal and a second power supply terminal, at least one of the upper bridge arm switch module and the lower bridge arm switch module includes a first switch element and a second switch element, and the semiconductor type of the first switch element and the second switch element are inconsistent; the device type of the first switch element and / or the second switch element includes GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET; the semiconductor material of the first switch element and / or the second switch element includes SiC, Si, GaN; the semiconductor type of the first switch element and / or the second switch element is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET and any one of SiC, Si, GaN; The number of the bridge arm circuits of the switch circuit is multiple, and the multiple bridge arm circuits are arranged in parallel and arranged in sequence along the first direction on the substrate; A plurality of upper bridge arm switch modules of the bridge arm circuit are arranged side by side along a first direction, and a plurality of lower bridge arm switch modules of the bridge arm circuit are arranged side by side along the first direction; The upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side along the first direction; And / or, the lower bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side along the first direction; The upper bridge arm switch module and the lower bridge arm switch module of each bridge arm circuit are arranged side by side and adjacent to each other along the first direction; The upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side and adjacent to each other along the first direction; And / or, the lower bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side and adjacent to each other along the first direction; The substrate comprises a first sub-substrate and a second sub-substrate, a plurality of upper bridge arm switch modules of the bridge arm circuit are arranged on the first sub-substrate, and a plurality of lower bridge arm switch modules of the bridge arm circuit are arranged on the second sub-substrate.

2. The power integrated module according to claim 1, characterized in that: The first switching element is a SiC MOSFET, and the second switching element is a Si IGBT.

3. The power integrated module according to claim 1, characterized in that: The upper bridge arm switch module and / or the lower bridge arm switch module further includes a third switch element, which is connected in parallel with the first switch element and the second switch element of the corresponding bridge arm switch module, and the semiconductor types of the first switch element, the second switch element and the third switch element are different from each other.

4. The power integrated module according to claim 3, characterized in that: The power integrated module also includes: A driving circuit, used for driving the switch circuit to be turned on or off; A control circuit, electrically connected to the drive circuit and the switch circuit respectively; The control circuit is used to receive the current pulse signal and control the drive circuit to drive the switch circuit to turn on or off according to the received current pulse signal.

5. The power integrated module according to claim 4, characterized in that: The control circuit is also used to control the first switch element of the switch circuit to turn on when receiving a small current small pulse signal, and the small current small pulse signal is a high level signal; And / or, used to control the first switch element to turn off when a small current small pulse signal is received, and the small current small pulse signal is a low level signal.

6. The power integrated module according to claim 5, characterized in that: The current range of the small current small pulse signal is 0-100A, and the pulse range is 0-20%.

7. The power integrated module according to claim 4, characterized in that: The control circuit is further used to control the first switch element of the switch circuit to turn on when receiving a medium current medium pulse signal, and the medium current medium pulse signal is a high level signal, and after a delay of a first preset time length, control the second switch element of the switch circuit to turn on; And / or, used to control the second switch element to turn off when a medium current medium pulse signal is received, and the medium current medium pulse signal is a low level signal, and control the first switch element to turn off after a delay of a first preset time.

8. The power integrated module according to claim 7, characterized in that: The medium current medium pulse signal has a current range of 100-300A and a pulse range of 20-60%.

9. The power integrated module according to claim 4, characterized in that: The control circuit is also used to control the second switch element of the switch circuit to turn on when receiving the first large current large pulse signal, and when the first large current large pulse signal is a high level signal, and after delaying for a second preset time length, control the first switch element of the switch circuit to turn on; And / or, used to control the first switch element to turn off when a first large current and large pulse signal is received, and the first large current and large pulse signal is a low level signal, and control the second switch element to turn off after a delay of a second preset time.

10. The power integrated module according to claim 9, characterized in that: The current range of the first large current large pulse signal is 300-600A, and the pulse range is 60-90%.

11. The power integrated module according to claim 4, characterized in that: The control circuit is also used to control the second switch element of the switch circuit to turn on when receiving a second large current large pulse signal, and the second large current large pulse signal is a high level signal; And / or, used to control the second switch element to turn off when a second large current large pulse signal is received and the second large current large pulse signal is a low level signal.

12. The power integrated module according to claim 11, characterized in that: The current range of the second large current large pulse signal is 600-707A, and the pulse range is 90-100%.

13. The power integrated module according to any one of claims 1 to 12, characterized in that: The substrate includes a board body and a conductive layer arranged on one side of the board body, and the switch circuit is arranged on the conductive layer.

14. The power integrated module according to claim 13, characterized in that: The output end of the first switch element, the output end of the second switch element and the output end of the third switch element of the switch circuit are welded or sintered on the conductive layer; The connection end of the first switch element is connected to the conductive layer via a copper sheet; The input end of the first switch element, the input end and the connection end of the second switch element, and the input end of the third switch element are all connected to the conductive layer via aluminum wires.

15. The power integrated module according to claim 14, characterized in that: A thermistor is disposed on the conductive layer. The thermistor, the first switch element, and the second switch element are spaced apart along the third direction. The thermistor is electrically connected to a drive circuit of the power integrated module.

16. The power integrated module according to claim 15, characterized in that: The conductive layer is also provided with a Pin needle, and the Pin needle is electrically connected to the driving circuit; The input end of the first switch element, the input end and the connection end of the second switch element, and the input end of the third switch element are connected to the Pin needle in sequence through an aluminum wire and a conductive layer; The thermistor is connected to the Pin needle through the conductive layer.

17. The power integrated module according to claim 16, characterized in that: The substrate, the copper sheet, the aluminum wire and the non-connected section of the Pin needle are packaged with an insulating member.

18. The power integrated module according to claim 14, characterized in that: The power integrated module further includes a heat dissipation base plate, the conductive layer includes a first conductive layer and a second conductive layer, and the switch circuit, the first conductive layer, the substrate, the second conductive layer and the heat dissipation base plate are sequentially stacked along a fourth direction.

19. The power integrated module according to claim 18, characterized in that: The power integrated module further comprises a packaging shell, which is arranged on the heat dissipation bottom plate and surrounds the substrate, and is connected to the substrate.

20. A vehicle, characterized in that: Comprising a power integrated module as claimed in any one of claims 1 to 19.

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