A gamma / vcom voltage value storage method

Abstract

The application discloses a Gamma / Vcom voltage value storage method, which comprises the following steps: receiving a plurality of voltage values generated by a first Gamma IC, converting each bit of the voltage value into a corresponding four-bit binary number, and sequentially storing the binary number into a preset position; reading the binary number, converting the binary number of every 4 bits into a decimal number, and outputting the voltage value composed of the converted decimal number by a second Gamma IC. For the Gamma / Vcom voltage value required by a customer, the application does not need to convert between two Gamma ICs, but only needs to output the Gamma / Vcom voltage value stored in the XB board EEP or FLASH, so that the application has universality and versatility, and can be used in SoCs designed by various different Gamma IC models, and has strong adaptability.

Description

Technical Field

[0001] This invention belongs to the field of display technology, specifically relating to a method for storing Gamma / Vcom voltage values. Background Technology

[0002] For TFT LCD (Thin Film Transistor Liquid Crystal Display), the traditional approach for TCONLESS models is to design the TCON function on the SOC (System on Chip). However, with the diversification of driving architectures, some SOCs also incorporate the Gamma IC.

[0003] Generally, each panel requires optimal Gamma / Vcom voltage adjustment on the production line. Different Gamma ICs output slightly different values. For example, the optimal Gamma / Vcom voltage adjusted for Panel A with Gamma IC1 will differ from the optimal voltage output by Gamma IC2 in the SOC. This makes monitoring the Gamma curve specifications difficult and may exceed the customer's preset range. Therefore, the adjusted Gamma / Vcom values ​​must be stored in XB EEP or Flash according to the SOC's specified format. This not only results in a long project verification cycle but also means that the Gamma / Vcom parameters stored in XB EEP or Flash can only be converted to a specific format from the SOC. If the Gamma IC in the SOC is changed, this format is no longer supported. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, this invention provides a method for storing Gamma / Vcom voltage values. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] This invention provides a method for storing Gamma / Vcom voltage values, applicable to on-chip systems or timing controllers (TconICs). The method includes:

[0006] Receive multiple voltage values ​​generated by a first Gamma IC, wherein the voltage values ​​are either Gamma voltage values ​​or Vcom voltage values;

[0007] Each digit of the voltage value is converted into a corresponding four-bit binary number, and the binary numbers are stored sequentially in a preset location;

[0008] Read the binary number and convert each 4-bit binary number into a decimal number;

[0009] The voltage value is composed of the decimal numbers obtained from the conversion and then output by the second Gamma IC.

[0010] In one embodiment of the present invention, the step of converting each digit of the voltage value into a corresponding four-bit binary number and sequentially storing the binary number in a preset position includes:

[0011] Starting from the most significant bit of the voltage value, each digit of the voltage value is converted into a corresponding 4-bit binary number;

[0012] The 4-bit binary number is stored in a preset byte in the horizontal circuit board XB EEP or Flash.

[0013] In one embodiment of the present invention, the step of reading the binary number and converting each 4-bit binary number into a decimal number includes:

[0014] Convert the high four binary digits and low four binary digits of each preset byte into decimal numbers respectively.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0016] This invention provides a method for storing Gamma / Vcom voltage values, comprising: receiving multiple voltage values ​​generated by a first Gamma IC; converting each bit of the voltage value into a corresponding four-bit binary number and storing the binary numbers sequentially in a preset location; reading the binary numbers and converting each 4-bit binary number into a decimal number; and using the converted decimal numbers to form a voltage value, which is then output by a second Gamma IC. For the Gamma / Vcom voltage values ​​required by the customer, this invention eliminates the need for conversion between two Gamma ICs; it only requires outputting the Gamma / Vcom voltage values ​​stored in the EEP or FLASH of the XB board. This method is universal and versatile, and can also be used with SoCs designed with various Gamma IC models, demonstrating strong adaptability.

[0017] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0018] Figure 1 This is a flowchart of a method for storing Gamma / Vcom voltage values ​​provided in an embodiment of the present invention;

[0019] Figure 2 This is a schematic diagram of a method for storing Gamma / Vcom voltage values ​​provided in an embodiment of the present invention;

[0020] Figure 3 This is a schematic diagram of a liquid crystal display device provided in an embodiment of the present invention; Detailed Implementation

[0021] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0022] Figure 1 This is a flowchart of a method for storing Gamma / Vcom voltage values ​​provided in an embodiment of the present invention. Figure 2 This is a schematic diagram of a method for storing Gamma / Vcom voltage values ​​provided in an embodiment of the present invention. Figure 1-2 As shown, this embodiment of the invention provides a method for storing Gamma / Vcom voltage values, applied to an on-chip system. The method includes:

[0023] S1. Receive multiple voltage values ​​generated by the first Gamma IC, wherein the voltage values ​​are either Gamma voltage values ​​or Vcom voltage values;

[0024] S2. Convert each digit of the voltage value into a corresponding four-bit binary number, and store the binary number in a preset position in sequence;

[0025] S3. Read the binary number and convert each 4-bit binary number into a decimal number;

[0026] S4. The voltage value is formed by using the decimal numbers obtained from the conversion and then output by the second Gamma IC.

[0027] Figure 3 This is a schematic diagram of a liquid crystal display device provided in an embodiment of the present invention. Specifically, as shown... Figure 3 As shown, a typical liquid crystal display device mainly includes a source driving circuit, a gate driving circuit, an XB board (x-board, horizontal circuit board), an on-chip chip (SoC) and a tcon (timing controller) disposed on a system board or MB board. The circuit motherboard and the horizontal circuit board can be connected by an FFC (flexible flat cable) to transmit signals between them. In this embodiment, the first Gamma IC is located on the CB board and the second Gamma IC is located on the MB board.

[0028] Step S2 above, which involves converting each digit of the voltage value into a corresponding four-bit binary number and storing the binary number sequentially in a preset position, includes:

[0029] Starting from the most significant bit of the voltage value, each digit of the voltage value is converted into a corresponding 4-bit binary number;

[0030] The 4-bit binary number is stored in a preset byte in the horizontal circuit board XB EEP or Flash.

[0031] For example, taking a Gamma / Vcom voltage value composed of tens digit, units digit, one decimal place, two decimal places, and three decimal places (xx.xxxV, where x represents the value of a certain digit in decimal), the storage of this Gamma / Vcom voltage value requires 20 bits. Specifically, the tens digit, units digit, one decimal place, two decimal places, and three decimal places of the Gamma / Vcom voltage value are each converted into a 4-bit binary number. Then, the high four bits of the first preset byte store the binary number corresponding to the tens digit of the Gamma / Vcom voltage value, and the low four bits store the binary number corresponding to the units digit of the Gamma / Vcom voltage value. The high four bits of the second preset byte store the binary number corresponding to the second decimal place of the Gamma / Vcom voltage value, and the low four bits store the binary number corresponding to the first decimal place of the Gamma / Vcom voltage value. Finally, the low four bits of the third preset byte store the binary number corresponding to the third decimal place of the Gamma / Vcom voltage value.

[0032] Currently, panel manufacturers use 14 Gamma voltages and 2 Vcom voltages. After the first Gamma / Vcom voltage value is stored, each digit of the next Gamma / Vcom voltage value is converted into a 4-bit binary number. It should be noted that the storage method of the next Gamma / Vcom voltage value is the same as that of the first Gamma / Vcom voltage value, but the binary number corresponding to the tenth digit of the next Gamma / Vcom voltage value should be stored in the high four bits of the third preset byte.

[0033] Further, in step S3, the step of reading the binary number and converting each 4-bit binary number into a decimal number includes:

[0034] Convert the high four binary digits and low four binary digits of each preset byte into decimal numbers respectively.

[0035] Of course, the Gamma / Vcom voltage value is not limited to being composed of tens digit, units digit, one decimal place, two decimal places, and three decimal places. This application does not limit the number of tree digits in the Gamma / Vcom voltage value.

[0036] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0037] This invention provides a method for storing Gamma / Vcom voltage values, comprising: receiving multiple voltage values ​​generated by a first Gamma IC; converting each bit of the voltage value into a corresponding four-bit binary number and storing the binary numbers sequentially in a preset location; reading the binary numbers and converting each 4-bit binary number into a decimal number; and using the converted decimal numbers to form a voltage value, which is then output by a second Gamma IC. For the Gamma / Vcom voltage values ​​required by the customer, this invention eliminates the need for conversion between two Gamma ICs; it only requires outputting the Gamma / Vcom voltage values ​​stored in the EEP or FLASH of the XB board. This method is universal and versatile, and can also be used with SoCs designed with various Gamma IC models, demonstrating strong adaptability.

[0038] In the description of this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0039] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0040] Although this application has been described herein in conjunction with various embodiments, other variations of the disclosed embodiments can be understood and implemented by those skilled in the art in carrying out the claimed application by reviewing the accompanying drawings, the disclosure, and the appended claims.

[0041] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A method of storing gamma / vcom voltage values, comprising: The method is applied to a system on chip or a timing controller Tcon IC, and comprises the following steps: receiving a plurality of voltage values generated by a first Gamma IC, wherein the voltage values are Gamma voltage values or Vcom voltage values; converting each bit of the voltage values into a corresponding four-bit binary number, and sequentially storing the binary numbers in a preset position; reading the binary numbers, and converting each 4-bit binary number into a decimal number; outputting the voltage values composed of the converted decimal numbers by a second Gamma IC.

2. The method of storing gamma / vcom voltage values according to claim 1, wherein, The step of converting each bit of the voltage values into a corresponding four-bit binary number, and sequentially storing the binary numbers in a preset position comprises the following steps: starting from the highest bit of the voltage values, converting each bit of the voltage values into a corresponding 4-bit binary number; storing the 4-bit binary number in a preset byte in an XB EEPROM or a Flash in a horizontal direction circuit board.

3. The method of storing gamma / vcom voltage values according to claim 2, wherein, The step of reading the binary numbers, and converting each 4-bit binary number into a decimal number comprises the following steps: converting the high four-bit binary number and the low four-bit binary number in each preset byte into a decimal number, respectively.

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