Ion source, ion implantation device and ion implantation method

Abstract

The present application relates to an ion source, an ion implantation device and an ion implantation method. The ion source comprises a shell, an electron gun, an electron receiving electrode, a selenium-containing solid source, a laser and an ion extraction electrode. The shell has an ionization chamber, and the electron gun and the electron receiving electrode are arranged in the ionization chamber, opposite to each other and spaced apart along a first direction. The selenium-containing solid source is arranged in the ionization chamber and has a first side wall. The laser is arranged toward the first side wall of the selenium-containing solid source to heat the selenium-containing solid source into a selenium-containing gas. The ion extraction electrode is arranged on a side wall of the shell along a second direction and has an ion outlet connected to the ionization chamber. The electron gun comprises a cathode, and a first preset voltage is provided between the cathode and the electron receiving electrode to guide the electrons emitted by the cathode to be emitted toward the electron receiving electrode, and the selenium-containing gas is ionized into selenium-containing ions. The ion extraction electrode is configured to guide the selenium-containing ions to be emitted through the ion outlet. The startup time when the ion source is subsequently used for ion implantation can be reduced.

Description

Technical Field

[0001] The present application relates to the technical field of ion sources, and in particular to an ion source, an ion implantation device and an ion implantation method. Background Art

[0002] An ion source is a device that ionizes neutral atoms or molecules and draws out an ion beam from them. Ion sources are usually used in fields such as ion implantation. Selenium ion implantation, as a type of ion implantation, is widely used in the manufacture of semiconductor devices, such as implanting selenium into the silicide of NMOS devices to reduce the contact resistance of NMOS devices and improve their performance.

[0003] However, conventional ion sources have a long startup time when performing selenium ion implantation. Summary of the invention

[0004] Based on this, it is necessary to provide an ion source, an ion implantation device and an ion implantation method to address the problem that the traditional ion source has a long startup time when performing selenium ion implantation.

[0005] According to a first aspect of the present application, there is provided an ion source, comprising:

[0006] a housing having an ionization chamber;

[0007] The electron gun and the electron receiving electrode are arranged in the ionization chamber, facing each other and spaced apart along a first direction;

[0008] A selenium-containing solid source and a laser, wherein the selenium-containing solid source is disposed in the ionization chamber and has a first side wall, and the laser is disposed toward the first side wall of the selenium-containing solid source to heat the selenium-containing solid source into a selenium-containing gas; and

[0009] An ion extraction electrode is provided through a side wall of the housing along the second direction and has an ion outlet communicated with the ionization chamber;

[0010] wherein the first direction and the second direction intersect each other;

[0011] The electron gun comprises a cathode, and a first preset voltage is provided between the cathode and the electron receiving electrode to guide the electrons emitted by the cathode of the electron gun to be emitted toward the electron receiving electrode, thereby ionizing the selenium-containing gas flowing between the electron gun and the electron receiving electrode into selenium-containing ions;

[0012] The ion extractor is configured to guide the selenium-containing ions to exit through the ion outlet.

[0013] In one of the embodiments, the ion source further comprises an electrical connection component disposed within the ionization chamber;

[0014] The electrical connection component and the ion extraction electrode are arranged in a spaced relationship along the second direction; and along the first direction, the electrical connection component and the ion extraction electrode are located between the electron gun and the electron receiving electrode, and along the second direction, the electron gun and the electron receiving electrode are located between the electrical connection component and the ion extraction electrode;

[0015] A second preset voltage is present between the electrical connection component and the ion extraction electrode to guide the selenium-containing ions to be emitted through the ion outlet.

[0016] In one embodiment, the electrical connection component and the selenium-containing solid source are an integrated structure.

[0017] In one embodiment, the ion source further includes welding material, and the electrical connection component is welded to the selenium-containing solid source through the welding material.

[0018] In one embodiment, the selenium-containing solid source further has a second side wall disposed opposite to the first side wall along the second direction, and the electrical connection component is welded to the second side wall of the selenium-containing solid source by the welding material;

[0019] Along the second direction, a distance between the first side wall and the second side wall is greater than a preset value.

[0020] In one embodiment, the electrical connection component passes through the shell at a side away from the selenium-containing solid source and is provided with an electrode connection portion for connecting an electrode.

[0021] In one embodiment, the electrode connecting portion is configured as a connecting slot adapted to the electrode.

[0022] In one embodiment, the material of the selenium-containing solid source includes selenium or selenium oxide.

[0023] According to a second aspect of the present application, an ion implantation device is provided, comprising:

[0024] The ion source of any of the above embodiments; and

[0025] An acceleration mechanism and an injection chamber, wherein the acceleration mechanism is used to make the ions emitted from the ion source incident on the sample in the injection chamber.

[0026] According to a third aspect of the present application, an ion implantation method is provided, wherein the ion implantation device is used to implant ions into the sample at a preset dose;

[0027] The preset dose is 4×10 16 Pieces / cm 2 -6×10 16Pieces / cm 2 ;

[0028] The sample includes a gallium oxide epitaxial wafer.

[0029] In the technical solution of the present application, when the ion source of the present application is used, a laser can be used to quickly heat a selenium-containing solid source into a selenium-containing gas. When the heated selenium-containing gas flows between the electron gun and the electron receiving electrode, it can be ionized into selenium-containing ions by the electrons emitted by the electron gun toward the electron receiving electrode. These selenium-containing ions can be emitted through the ion outlet so that they can be used for subsequent ion injection. Therefore, by using the ion source of the present application, the process of transporting the selenium-containing gas to the ionization chamber can be discarded, and a laser can be used to quickly heat the selenium-containing solid source into a selenium-containing gas, which is beneficial to reduce the startup time when the ion source is used for subsequent ion injection. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic structural diagram of an ion source in an embodiment of the present application is shown.

[0031] Figure 2 Shows Figure 1 A partial enlarged schematic diagram of .

[0032] Figure 3 A schematic structural diagram of an ion source, an acceleration mechanism and an injection chamber in an embodiment of the present application is shown.

[0033] Figure 4 A schematic structural diagram of an ion source, an acceleration mechanism and an injection chamber in another embodiment of the present application is shown.

[0034] Figure 5 A scanning electron microscope image of a sample subjected to ion implantation using the ion implantation apparatus and ion implantation method of the present application is shown.

[0035] Figure 6 A comprehensive diagram of various element surface scans of a sample subjected to ion implantation using the ion implantation apparatus and ion implantation method of the present application is shown.

[0036] Figure 7 A surface scan of selenium elements of a sample that has been ion implanted using the ion implantation apparatus and ion implantation method of the present application is shown.

[0037] Figure 8 The EDX energy spectrum of the sample after ion implantation using the ion implantation apparatus and ion implantation method of the present application is shown.

[0038] Fig. 9 The secondary ion mass spectrum of the sample after ion implantation using the ion implantation apparatus and ion implantation method of the present application is shown.

[0039] Figure numerals: 10, ion source; 100, shell; 210, electron gun; 220, electron receiving electrode; 310, selenium-containing solid source; 311, first side wall; 312, second side wall; 320, electrical connection component; 321, electrode connection part; 3211, conical groove bottom wall; 3212, cylindrical groove side wall; 322, first section; 323, second section; 330, welding material; 400, laser; 401, output end; 500, ion extraction electrode; 600, laser incident window; 700, laser adjustment seat; 710, fixed seat; 720, adjustment mechanism; 721, driving cylinder; 722, hinged seat; A, ionization chamber; B, ion outlet; C, first opening; 20, acceleration mechanism; 30, injection chamber; 31, chamber wall; 32, support platform; 40, sample; 41, surface. DETAILED DESCRIPTION

[0040] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0041] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0042] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0043] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0044] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0045] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0046] After research, it was found that in the related technology, a gas source needs to be input into the ionization chamber and ionized in the ionization chamber to generate an ion beam, which results in a long startup time of the traditional ion source when performing selenium ion implantation.

[0047] In the related art, gas sources such as hydrogen selenide are mainly used for ion implantation. However, due to the poor thermal stability and high polarity of hydrogen selenide, this may cause condensation or decomposition in the flow control valve, thereby affecting the flow rate and flow stability of the gas, thereby hindering the stable injection of the gas source and affecting the start-up time of selenium ion injection. In addition, before the user can start the selenium injection process, the vaporizer assembly needs to be heated to the desired temperature to obtain the gas source supplied to the ionization chamber, resulting in a longer start-up time for the traditional ion source when performing selenium ion injection.

[0048] In order to solve at least one of the above technical problems, the present application designs an ion source that can use a laser to heat a selenium-containing solid source to generate a selenium-containing gas located in an ionization chamber, thereby reducing the process of transporting the selenium-containing gas to the ionization chamber, and thus helping to reduce the startup time during selenium ion injection.

[0049] Figure 1 A schematic structural diagram of an ion source 10 in an embodiment of the present application is shown.

[0050] See also Figure 1 According to the first aspect of the present application, an ion source 10 provided in an embodiment of the present application includes a housing 100 , an electron gun 210 , an electron receiving electrode 220 , a selenium-containing solid source 310 , a laser 400 and an ion extraction electrode 500 .

[0051] The shell 100 has an ionization chamber A, and the electron gun 210 and the electron receiving electrode 220 are arranged in the ionization chamber A, and are arranged opposite to each other and spaced apart along the first direction F1, wherein the electron gun 210 includes a cathode (emitter) for emitting electrons, a focusing electrode for focusing the electron beam and an anode for accelerating electrons, the cathode can be a filament, and the electron receiving electrode 220 can be grounded so that the electrons received by the electron receiving electrode 220 are grounded, thereby improving the safety of the ion source 10.

[0052] The selenium-containing solid source 310 is disposed in the ionization chamber A and has a first side wall 311. The laser 400 is disposed toward the first side wall 311 of the selenium-containing solid source 310 to heat the selenium-containing solid source 310 into a selenium-containing gas. The laser heating method can quickly heat the selenium-containing solid source 310 into a selenium-containing gas, which is beneficial to reducing the startup time when the ion source 10 is used for ion implantation later.

[0053] The material of the selenium-containing solid source 310 may be selenium oxide or selenium. Thus, the laser 400 may be used to heat the selenium-containing solid source 310 to a sufficient temperature to gasify it into saturated selenium oxide vapor or selenium vapor.

[0054] In this embodiment, the material of the selenium-containing solid source 310 is selenium.

[0055] The ion extraction electrode 500 is disposed on a side wall of the housing 100 along the second direction F2 and has an ion outlet B communicated with the ionization chamber A, wherein the first direction F1 and the second direction F2 intersect each other.

[0056] Optionally, the first direction F1 and the second direction F2 are perpendicular to each other. For example, the first direction F1 is parallel to the width direction of the housing 100 , and the second direction F2 is parallel to the length direction of the housing 100 .

[0057] The electron gun 210 includes a cathode, and there is a first preset voltage between the cathode of the electron gun 210 and the electron receiving electrode 220 to guide the electrons emitted by the cathode of the electron gun 210 to be emitted toward the electron receiving electrode 220, and the selenium-containing gas flowing between the electron gun 210 and the electron receiving electrode 220 is ionized into selenium-containing ions. The ion extraction electrode 500 is configured to be able to guide the selenium-containing ions to be emitted through the ion outlet B.

[0058] Optionally, the ion extraction electrode 500 is annular in structure, and the ion extraction electrode 500 can be better utilized to allow the selenium-containing ions to be ejected through the ion outlet B.

[0059] When the ion source 10 of the present application is used, the laser 400 can be used to quickly heat the selenium-containing solid source 310 into a selenium-containing gas. When the heated selenium-containing gas flows between the electron gun 210 and the electron receiving electrode 220, it can be ionized into selenium-containing ions by the electrons emitted by the electron gun 210 toward the electron receiving electrode 220 (when electrons bombard the selenium-containing gas, the atoms or molecules of the selenium-containing gas will lose electrons and become positive ions or molecular ions). This part of the selenium-containing ions can be emitted through the ion outlet B so that this part of the selenium-containing ions can be used for subsequent ion injection. Therefore, by using the ion source 10 of the present application, the process of transporting the external selenium-containing gas to the ionization chamber A can be abandoned, and the laser 400 can be used to quickly heat the selenium-containing solid source 310 into a selenium-containing gas, which is beneficial to reduce the startup time when the ion source 10 is used for subsequent ion injection.

[0060] In some embodiments, the ion source 10 also includes an electrical connection component 320 disposed in the ionization chamber A, and the electrical connection component 320 and the ion extraction electrode 500 are arranged at intervals along the second direction F2, and along the first direction F1, the electrical connection component 320 and the ion extraction electrode 500 are located between the electron gun 210 and the electron receiving electrode 220, and along the second direction F2, the electron gun 210 and the electron receiving electrode 220 are located between the electrical connection component 320 and the ion extraction electrode 500, and there is a second preset voltage between the electrical connection component 320 and the ion extraction electrode 500 to guide the selenium-containing ions to be emitted through the ion outlet B.

[0061] Since the electrical connection component 320 and the ion extraction electrode 500 are located between the electron gun 210 and the electron receiving electrode 220 along the first direction F1, and the electron gun 210 and the electron receiving electrode 220 are located between the electrical connection component 320 and the ion extraction electrode 500 along the second direction F2, the heated selenium-containing gas can flow between the electron gun 210 and the electron receiving electrode 220 when flowing toward the ion outlet B, and be ionized into selenium-containing ions by the electrons emitted by the electron gun 210 toward the electron receiving electrode 220, and the selenium-containing ions can be well guided to be emitted through the ion outlet B by using the electrical connection component 320 and the ion extraction electrode 500.

[0062] In some embodiments, the electrical connection component 320 and the selenium-containing solid source 310 are an integrated structure.

[0063] Improve the integrity of the electrical connection component 320 and the selenium-containing solid source 310, and facilitate the installation of the electrical connection component 320 and the selenium-containing solid source 310 in the ionization chamber A. In addition, if the selenium-containing solid source 310 uses a pure selenium rod, since the pure selenium rod has poor conductivity and is not easy to be made into a precise shape or punched, the electrical connection component 320 and the selenium-containing solid source 310 are set as an integrated structure, which is convenient for using the electrical connection component 320 to connect to an external power source, and form a second preset voltage between the electrical connection component 320 and the ion extraction electrode 500, so as to well guide the selenium-containing ions to be emitted through the ion outlet B.

[0064] In some embodiments, the ion source 10 further includes a welding material 330 , and the electrical connection component 320 is welded to the selenium-containing solid source 310 through the welding material 330 .

[0065] The material of the welding material 330 can be indium or other metal materials. By welding the electrical connection component 320 to the selenium-containing solid source 310 using the welding material 330, the strength of the integrated structure formed by the electrical connection component 320 and the selenium-containing solid source 310 can be improved, and the overall structure formed by the electrical connection component 320 and the selenium-containing solid source 310 is more stable and strong, which is conducive to improving the reliability and stability of the ion source 10.

[0066] Optionally, the selenium-containing solid source 310 is made of pure selenium with a purity of up to 99.99% to ensure the quality of the selenium ions ultimately produced.

[0067] Optionally, the electrical connection component 320 is made of copper.

[0068] In some embodiments, the selenium-containing solid source 310 further has a second side wall 312 disposed opposite to the first side wall 311 along the second direction F2, and the electrical connection component 320 is welded to the second side wall 312 of the selenium-containing solid source 310 by welding material 330. Along the second direction F2, the distance between the first side wall 311 and the second side wall 312 is greater than a preset value.

[0069] Optionally, the preset value may be greater than or equal to 19 mm. For example, the distance between the first side wall 311 and the second side wall 312 is greater than 19 mm and less than 21 mm.

[0070] The laser 400 mainly heats the first side wall 311 of the selenium-containing solid source 310 , so that the laser 400 heats the selenium-containing solid source 310 and the heat generated by the selenium-containing solid source 310 is mainly concentrated on the first side wall 311 of the selenium-containing solid source 310 , and this part of heat is difficult to transfer to the welding material 330 arranged on the second side wall 312 .

[0071] The distance between the first side wall 311 and the second side wall 312 is large enough to reduce the influence of the first side wall 311 of the selenium-containing solid source 310 heated by the laser 400 on the welding material 330 arranged on the second side wall 312, reduce the probability of melting of the welding material 330, and improve the connection reliability between the electrical connection component 320 and the selenium-containing solid source 310.

[0072] In some embodiments, the electrical connection component 320 passes through the housing 100 at a side away from the selenium-containing solid source 310 and is provided with an electrode connection portion 321 for connecting an electrode.

[0073] In this way, it is convenient for the electrode connecting part 321 of the electrical connection component 320 to pass through the shell 100 and connect to the electrode electrically connected to the power supply. Specifically, the electrode connecting part 321 of the electrical connection component 320 is electrically connected to the positive electrode of the power supply, and the ion extraction electrode 500 is electrically connected to the negative electrode of the power supply, thereby being able to guide the selenium-containing ions to be emitted through the ion outlet B.

[0074] In some embodiments, the electrode connecting portion 321 is configured as a connecting slot adapted to the electrode.

[0075] Optionally, the electrical connection component 320 includes a first section 322 connected to the second side wall 312 of the selenium-containing solid source 310 along the second direction F2, and a second section 323 connected to the first section 322 along the second direction F2, a connecting slot is recessed on the second section 323, a second opening for the second section 323 to pass through is provided on the shell 100, and the outer peripheral wall of the second section 323 is bonded to the inner peripheral wall of the second opening by a sealant.

[0076] The connection slot has a conical slot bottom wall 3211 and a columnar slot side wall 3212 connected to the conical slot bottom wall 3211 , so that the connection slot can be detachably connected to the electrode and the electrical connection component 320 and the electrode can be connected more firmly.

[0077] In some embodiments, the housing 100 is provided with a first opening C communicating with the ionization chamber A. The ion source 10 further includes a laser incident window 600 sealedly connected to the first opening C, and the laser incident window 600 is disposed toward the first side wall 311 .

[0078] Optionally, the outer peripheral wall of the laser incident window 600 is bonded to the inner peripheral wall of the first opening C by means of a sealant.

[0079] Optionally, the laser incident window 600 may be made of glass, or other materials that allow laser light to pass through, which is not specifically limited herein.

[0080] In this way, an external laser 400 can be selected, and the laser emitted by the laser 400 is incident on the first side wall 311 of the selenium-containing solid source 310 through the laser incident window 600 to heat the selenium-containing solid source 310 into a selenium-containing gas. The external laser 400 is conducive to improving the flexibility of the use of the laser 400 and can also reduce the occupied volume of the housing 100.

[0081] Optionally, see Figure 2 The ion source 10 also includes a laser adjustment seat 700, which includes a fixed seat 710 and an adjustment mechanism 720. The adjustment mechanism 720 is connected to the laser 400 to adjust the direction and angle of the output end 401 of the laser 400. Specifically, the laser 400 is rotatably connected to the fixed seat 710 around an axis parallel to the third direction. The adjustment mechanism 720 includes a driving cylinder 721 and an articulated seat 722 extending along the first direction F1. The piston rod of the driving cylinder 721 is connected to the articulated seat 722. The laser 400 is rotatably connected to the articulated seat 722 around an axis parallel to the third direction. In this way, the laser 400 can be rotated relative to the articulated seat 722 around an axis parallel to the third direction by the driving cylinder 721, thereby adjusting the direction and angle of the output end 401 of the laser 400 so that the laser 400 can better heat the first side wall 311 of the selenium-containing solid source 310.

[0082] See also Figure 3 According to the second aspect of the present application, an ion implantation device provided in one embodiment of the present application comprises an ion source 10, an acceleration mechanism 20 and an implantation chamber 30 as in any of the above embodiments, wherein the acceleration mechanism 20 is used to make the ions emitted from the ion source 10 incident on a sample 40 in the implantation chamber 30.

[0083] The ion implantation device can be used to implant selenium ions into the sample 40 .

[0084] Optionally, the ion implantation device may further include an ion screener located between the acceleration mechanism 20 and the implantation chamber 30 . The ion screener may be used to remove unnecessary ions, thereby better implanting selenium-containing ions into the sample 40 .

[0085] According to a third aspect of the present application, an ion implantation method is provided, wherein the ion implantation device is used to implant ions into a sample 40 at a preset dose, wherein the preset dose is 4×10 16 Pieces / cm 2 -6×10 16 Pieces / cm 2 , the samples include gallium oxide epitaxial wafers.

[0086] Sample 40 is a semiconductor wafer. In the present embodiment, sample 40 is a gallium oxide epitaxial wafer. The gallium oxide epitaxial wafer includes an aluminum oxide substrate and a gallium oxide epitaxial layer (β-GaO) stacked together. The thickness of the aluminum oxide substrate is 430 microns, and the thickness of the gallium oxide epitaxial layer is 1 micron. The selenium-containing solid source 310 is specifically a selenium rod. The laser 400 is first started to preheat the selenium rod, and then the selenium rod is exposed to the laser beam so that the selenium rod can generate enough selenium vapor at the beginning of the ion implantation process. The selenium vapor is ionized by the electrons emitted by the electron gun 210 toward the electron receiving electrode 220 to form selenium-containing ions for ion implantation. The ion beam formed by the selenium-containing ions is used by the acceleration mechanism 20 to make the ions emitted by the ion source 10 incident on the sample 40 in the implantation chamber 30 at a preset dose, wherein the preset dose is 5×10 16 Pieces / cm 2 , the injection angle is 10°-90°, the injection angle is the angle between the emission direction of the ions emitted by the ion source 10 (the emission direction of the ions emitted by the ion source 10 is the horizontal direction) and the surface 41 of the sample 40, and illustratively, the injection angle is 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80° or 90°, specifically as follows Figure 3 In the embodiment shown, the injection angle is 90°. Figure 4 In the embodiment shown, the injection angle is 10°, the injection chamber 30 includes a chamber wall 31 and a support table 32 disposed in the chamber wall 31, and the sample 40 is fixed on the support table 32, so that a corresponding injection angle is formed between the ions emitted by the ion source 10 and the surface 41 of the sample 40. In this embodiment, the injection angle is 10°. Since this part of the ion beam has a higher energy, they can penetrate the surface of the semiconductor wafer and enter the interior of the semiconductor wafer. Specifically, this part of the ion beam can be incident on the interior of the gallium oxide wafer.

[0087] The ion implantation method of the present application also includes annealing the sample 40. After the ion implantation, the lattice structure of the sample 40 can be repaired by thermal annealing, thereby reducing the impact of the ion implantation on the lattice structure of the sample 40 and allowing the impurity atoms to occupy the preset positions of the lattice.

[0088] Compared with traditional heating methods, the laser heating method using the laser 400 in the present application can reach the temperature required for evaporation of the selenium-containing solid source 310 more quickly. In addition, after the selenium ion injection is completed using the ion source 10 of the present application, the laser 400 can be turned off in time to achieve sufficient cooling of the selenium-containing solid source 310.

[0089] Therefore, the ion implantation device and the ion implantation method of the present application improve the efficiency, safety and reliability of the selenium ion implantation process.

[0090] See also Figure 5-Figure 8The present application uses X-ray energy spectrum analysis technology (EDX) to test the surface of the sample 40 that is ion-implanted using the ion implantation method of the present application. The test results show that the distribution of selenium (Se) ions on the surface of the sample 40 is extremely uniform, and gallium (Ga) ions, oxygen (O) ions, and aluminum (Al) ions also exist in the sample 40.

[0091] See also Fig. 9 The present application also uses secondary ion mass spectrometry (SIMS) to test the sample 40 that is ion-implanted using the ion implantation method of the present application. The test results show that selenium ions have successfully penetrated into the epitaxial layer of gallium oxide (GaO).

[0092] The above test results indicate that the ion implantation apparatus and the ion implantation method of the present application can achieve accurate and uniform selenium ion implantation, and meet the requirement for accurate control of the depth of selenium ion implantation.

[0093] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0094] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. An ion source, characterized in that: include: a housing having an ionization chamber; The electron gun and the electron receiving electrode are arranged in the ionization chamber, facing each other and spaced apart along a first direction; A selenium-containing solid source and a laser, wherein the selenium-containing solid source is disposed in the ionization chamber and has a first side wall, and the laser is disposed toward the first side wall of the selenium-containing solid source to heat the selenium-containing solid source into a selenium-containing gas; as well as An ion extraction electrode is provided through a side wall of the housing along the second direction and has an ion outlet communicated with the ionization chamber; wherein the first direction and the second direction intersect each other; The electron gun comprises a cathode, and a first preset voltage is provided between the cathode and the electron receiving electrode to guide the electrons emitted by the cathode of the electron gun to be emitted toward the electron receiving electrode, thereby ionizing the selenium-containing gas flowing between the electron gun and the electron receiving electrode into selenium-containing ions; The ion extraction electrode is configured to guide the selenium-containing ions to exit through the ion outlet; The ion source also includes an electrical connection component disposed in the ionization chamber; The electrical connection component and the ion extraction electrode are arranged in a spaced relationship along the second direction; and along the first direction, the electrical connection component and the ion extraction electrode are located between the electron gun and the electron receiving electrode, and along the second direction, the electron gun and the electron receiving electrode are located between the electrical connection component and the ion extraction electrode; A second preset voltage is present between the electrical connection component and the ion extraction electrode to guide the selenium-containing ions to be emitted through the ion outlet.

2. The ion source according to claim 1, characterized in that The electrical connection component and the selenium-containing solid source are an integrated structure.

3. The ion source according to claim 2, characterized in that The ion source further comprises welding material, and the electrical connection component is welded to the selenium-containing solid source through the welding material.

4. The ion source according to claim 3, characterized in that The selenium-containing solid source further has a second side wall disposed opposite to the first side wall along the second direction, and the electrical connection component is welded to the second side wall of the selenium-containing solid source by the welding material; Along the second direction, a distance between the first side wall and the second side wall is greater than a preset value.

5. The ion source according to claim 2, characterized in that The electrical connection component passes through the shell at a side away from the selenium-containing solid source and is provided with an electrode connection portion for connecting an electrode.

6. The ion source according to claim 5, characterized in that The electrode connecting portion is configured as a connecting slot matched with the electrode.

7. The ion source according to any one of claims 1 to 6, characterized in that: The material of the selenium-containing solid source includes selenium or selenium oxide.

8. An ion implantation device, characterized in that: include: The ion source according to any one of claims 1 to 7; and An acceleration mechanism and an injection chamber, wherein the acceleration mechanism is used to make the ions emitted from the ion source incident on the sample in the injection chamber.

9. An ion implantation method, characterized in that: Using the ion implantation device according to claim 8 to implant ions into the sample at a preset dose; The preset dose is 4×10 16 Pieces / cm 2 -6×10 16 Pieces / cm 2 ; The sample includes a gallium oxide epitaxial wafer.

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