A preparation system for silicon carbide-based composite phase change materials

Abstract

This invention relates to the field of material preparation equipment, and more particularly to a preparation system for silicon carbide-based composite phase change materials, comprising: a pretreatment module for preparing a silicon carbide felt precursor; a vacuum heating module for vacuum calcining the silicon carbide felt precursor and decarburizing; a pulverizing module for pulverizing the silicon carbide felt to obtain silicon carbide microparticles; a substrate preparation module for preparing a silicon carbide-based composite phase change substrate; a first detection module for detecting the preparation information of the silicon carbide microparticles; a second detection module for detecting the performance parameters of the silicon carbide-based composite phase change substrate; and a preparation determination module for determining whether the preparation of the silicon carbide microparticles and the silicon carbide-based composite phase change substrate meets preset standards, thereby improving the stability and efficiency of silicon carbide-based composite phase change material preparation.

Description

Technical Field

[0001] This invention relates to the field of materials preparation equipment, and more particularly to a preparation system for silicon carbide-based composite phase change materials. Background Technology

[0002] With the miniaturization and increasing power of electronic devices, new challenges have been posed to heat dissipation technology. If the heat generated by the device is not dissipated in time, the temperature of the entire electronic device will rise, and it may even burn out. Air cooling and liquid cooling require accessories such as fans and pumps, which not only increase the size of the system, but also consume additional energy. Therefore, more advanced silicon carbide-based composite phase change materials have emerged.

[0003] Chinese Patent Publication No. CN113953513A discloses a method and system for preparing a nano-silicon carbide particle-reinforced aluminum-based gradient composite material. The system includes, in sequence, an ultrasonic dispersion reaction cylinder, an ultrasonic disperser, a lifting and tilting clamping mechanism, a mixing reaction cylinder, a magnetic stirrer, a drying oven, an industrial planetary ball mill, a gradient powder press, a vacuum furnace, and a high-temperature furnace. The ultrasonic dispersion reaction cylinder holds the nano-silicon carbide powder to be processed; the ultrasonic disperser is used to ultrasonically disperse the nano-silicon carbide; the mixing reaction cylinder is used to mix a suspension containing silicon carbide reinforcement and a 2014Al alloy suspension; the suspension containing silicon carbide reinforcement in the ultrasonic dispersion reaction cylinder is added to the mixing reaction cylinder via the lifting and tilting clamping mechanism; the magnetic stirrer is used to stir the liquid in the mixing reaction cylinder; the drying oven is used to dry the initially mixed powder; the industrial planetary ball mill is used to grind the composite material powder; and the gradient powder press is used for extruding the nano-silicon carbide / 2014Al composite material powder. It can be seen that the system does not detect the key intermediate and final products of the composite material, leading to a large number of substandard products when the system malfunctions. Summary of the Invention

[0004] Therefore, the present invention provides a preparation system for silicon carbide-based composite phase change materials to overcome the poor stability and low preparation efficiency of the products due to the lack of necessary detection in the preparation system in the prior art.

[0005] To achieve the above objectives, the present invention provides a system comprising:

[0006] The pretreatment module, used to prepare a silicon carbide felt precursor, includes a cutting unit for cutting carbon fiber felt, a spraying unit located at the output end of the cutting unit for double-sided spraying of the carbon fiber felt, a first drying unit located at the output end of the spraying unit for shaping the sprayed material, a rolling unit located in the first drying unit for rolling and shaping the carbon fiber felt, and a second drying unit located at the output end of the rolling unit for drying the rolled carbon fiber felt; the spraying material is silica gel.

[0007] A vacuum heating module, which is connected to the pretreatment module, is used to vacuum burn the silicon carbide felt precursor and remove carbon, including a furnace body, an argon gas delivery unit and an air delivery unit respectively connected to the furnace body;

[0008] A pulverizing module, which is connected to the vacuum heating module, is used to pulverize silicon carbide felt to obtain silicon carbide microparticles.

[0009] The first detection module is connected to the vacuum heating module and the pulverizing module respectively, and is used to detect the preparation information of the silicon carbide particles, including the purity of the silicon carbide particles and the carbon dioxide concentration in the furnace.

[0010] The substrate preparation module, connected to the pulverizing module, includes a stirring unit for mixing the silicon carbide particles and additives, a forming unit located at the output end of the stirring unit for pressure forming of the stirred material, a sintering unit located at the output end of the forming unit for sintering the formed material, and an impregnation unit located at the output end of the sintering unit for impregnating the sintered material to obtain a silicon carbide-based composite phase change substrate; the additives are a binder and magnesium powder.

[0011] The second detection module is connected to the substrate preparation module and is used to detect the performance parameters of the silicon carbide-based composite phase change substrate, including the heat storage coefficient and the thermal conductivity.

[0012] The preparation and determination module is connected to the pretreatment module, the vacuum heating module, the pulverizing module, the substrate preparation module, the first detection module, and the second detection module, respectively.

[0013] The purity of the silicon carbide particles is used to determine whether the preparation of the silicon carbide particles meets the preset standard.

[0014] The heat storage coefficient and thermal conductivity of the silicon carbide-based composite phase change substrate are used to determine whether the preparation of the silicon carbide-based composite phase change substrate meets the preset standards.

[0015] Furthermore, the operating parameters of the system are adjusted based on the determination results.

[0016] Furthermore, the preparation determination module determines that if the preparation of silicon carbide particles does not meet the preset standard based on the purity of the silicon carbide particles, it reduces the spraying flow rate of the spraying unit, or determines the reason for the preparation not meeting the preset standard based on the concentration of carbon dioxide in the furnace at the end of decarburization.

[0017] Furthermore, the reduction in the spray flow rate is positively correlated with the purity difference, which is the difference between a first preset purity threshold and the purity of the silicon carbide particles.

[0018] Furthermore, if the preparation determination module determines that the reduction in the spraying flow rate is not up to standard based on a comparison between the purity of the next batch of silicon carbide microparticles after the reduction in spraying flow rate and a second preset purity threshold, it will increase the shaping pressure of the roller pressing unit to the corresponding value.

[0019] Furthermore, the preparation determination module determines the reasons why the preparation does not meet the preset standard based on the concentration of carbon dioxide, including the air intake of the vacuum heating module for decarbonization not meeting the standard and increasing the air intake, or the firing temperature of the silicon carbide felt precursor not meeting the standard and increasing the firing temperature.

[0020] Furthermore, the preparation determination module is equipped with several adjustment methods for increasing the firing temperature, and each adjustment method has a different range for increasing the firing temperature.

[0021] Furthermore, if the preparation determination module preliminarily determines, based on the heat storage coefficient, that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard, it increases the impregnation time of the impregnation unit for the preparation of the next batch of materials, or decreases the molding pressure of the molding unit for the preparation of the next batch of materials.

[0022] Furthermore, when the preparation determination module initially determines that the preparation of the silicon carbide-based composite phase change substrate meets the preset standard based on the heat storage coefficient, it then makes a secondary determination based on the thermal conductivity to determine whether the preparation of the silicon carbide-based composite phase change substrate meets the preset standard.

[0023] Furthermore, if the preparation determination module determines that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard based on the thermal conductivity, it increases the sintering temperature of the sintering unit for the next batch of materials, or corrects the forming pressure of the forming unit.

[0024] Furthermore, the preparation determination module is equipped with several correction methods for the molding pressure correction, and each correction method has a different correction range for the molding pressure.

[0025] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0026] This invention ensures efficient system operation by setting up a first detection module for detecting key intermediate products and a second detection module for detecting final products, as well as a preparation determination module that determines whether the preparation of silicon carbide microparticles and silicon carbide-based composite phase change substrates meets preset standards based on the detection information, and adjusts the system's operating parameters according to the determination results. Through detection and feedback, the system's operating parameters are adjusted in a timely manner, thereby ensuring product stability and preparation efficiency.

[0027] Furthermore, when the purity of silicon carbide particles determines that the preparation of silicon carbide particles does not meet the preset standard, the present invention reduces the spraying flow rate of the spraying unit or determines the reason for the non-compliance of the preparation by the concentration of carbon dioxide in the furnace at the end of decarburization. Thus, the system's operating parameters are adjusted accordingly in a self-learning manner when the product purity does not meet the standard.

[0028] Furthermore, if the purity of silicon carbide particles is low due to an unreasonable ratio of carbon fiber felt and silica gel, the problem can be solved by reducing the spraying flow rate of the spraying unit. At the same time, the present invention determines the reduction range of the spraying flow rate by using the purity difference, thereby achieving precise control of the flow rate reduction.

[0029] Furthermore, in the adjusted purity testing and comparison of the next batch of materials, if the purity does not meet the standards, the present invention increases the shaping pressure of the roller pressing unit to strengthen the interfacial bonding strength between the silica gel body and the carbon fiber felt.

[0030] Furthermore, the present invention determines the reasons why the preparation does not meet the preset standards based on the concentration of carbon dioxide, and adjusts the equipment operating parameters for the next batch accordingly to further ensure the stability of the product.

[0031] Furthermore, when it is necessary to increase the firing temperature, the present invention provides several adjustment methods to achieve precise adjustment of the firing temperature.

[0032] Furthermore, when the present invention preliminarily determines that the preparation of silicon carbide-based composite phase change substrate does not meet the preset standard based on the heat storage coefficient, it increases the impregnation time of the impregnation unit for the preparation of the next batch of materials, or reduces the molding pressure of the molding unit for the preparation of the next batch of materials, thereby ensuring the stable operation of the system and the performance of the product.

[0033] Furthermore, the present invention also uses thermal conductivity as a secondary factor to determine whether the preparation of silicon carbide-based composite phase change substrates meets preset standards, thereby more accurately correcting the operating parameters of the system and further ensuring the stability of product preparation. Attached Figure Description

[0034] Figure 1 This is a schematic block diagram of the structure of the preparation system according to an embodiment of the present invention;

[0035] Figure 2 This is a schematic diagram of the preprocessing module in an embodiment of the present invention;

[0036] Figure 3 This is a schematic diagram of the substrate fabrication module according to an embodiment of the present invention;

[0037] Figure 4 This is a flowchart illustrating how to determine whether the preparation of silicon carbide microparticles meets a preset standard, as described in an embodiment of the present invention.

[0038] In the diagram: 1. Carbon fiber felt; 21. Cutting unit; 22. Spraying unit; 23. First drying unit; 24. Roll pressing unit; 25. Second drying unit; 31. Stirring unit; 32. Molding unit; 33. Sintering unit; 34. Impregnation unit. Detailed Implementation

[0039] To make the objectives and advantages of the present invention clearer, the present invention will be further described below with reference to embodiments; it should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention.

[0040] It should be noted that the data in this embodiment are all obtained by comprehensively analyzing and evaluating the historical test data and corresponding historical test results from the preparation determination module described in this invention in the three months prior to this test.

[0041] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0042] Please see Figure 1 , Figure 2 , Figure 3 as well as Figure 4 The figures shown are, respectively, a structural block diagram of the preparation system of the present invention; a structural schematic diagram of the preprocessing module of the present invention; a structural schematic diagram of the substrate preparation module of the present invention; and a flowchart of the present invention for determining whether the preparation of silicon carbide microparticles meets the preset standard.

[0043] An embodiment of the present invention discloses a preparation system for a silicon carbide-based composite phase change material, comprising:

[0044] The pretreatment module, used to prepare a silicon carbide felt precursor, includes a cutting unit for cutting carbon fiber felt, a spraying unit located at the output end of the cutting unit for double-sided spraying of the carbon fiber felt, a first drying unit located at the output end of the spraying unit for shaping the sprayed material, a rolling unit located in the first drying unit for rolling and shaping the carbon fiber felt, and a second drying unit located at the output end of the rolling unit for drying the rolled carbon fiber felt; the spraying material is silica gel.

[0045] A vacuum heating module, connected to the pretreatment module, is used for vacuum firing of the silicon carbide felt precursor and decarburization. It includes a furnace body, an argon gas delivery unit and an air delivery unit connected to the furnace body respectively. The argon gas delivery unit can deliver argon gas into the furnace body before vacuuming, and the air delivery unit is used to deliver air during the decarburization process.

[0046] A pulverizing module, which is connected to the vacuum heating module, is used to pulverize silicon carbide felt to obtain silicon carbide microparticles.

[0047] The first detection module is connected to the vacuum heating module and the pulverizing module respectively, and is used to detect the preparation information of the silicon carbide particles, including the purity of the silicon carbide particles and the carbon dioxide concentration in the furnace.

[0048] The substrate preparation module, connected to the pulverizing module, includes a stirring unit for mixing the silicon carbide particles and additives, a forming unit located at the output end of the stirring unit for pressure molding the stirred material, a sintering unit located at the output end of the forming unit for sintering the formed material, and an impregnation unit located at the output end of the sintering unit for impregnating the sintered material to obtain a silicon carbide-based composite phase change substrate; the additives are a binder and magnesium powder; the impregnation material is paraffin wax;

[0049] The second detection module is connected to the substrate preparation module and is used to detect the performance parameters of the silicon carbide-based composite phase change substrate, including the heat storage coefficient and the thermal conductivity.

[0050] The preparation determination module is connected to the pretreatment module, the vacuum heating module, the pulverizing module, the substrate preparation module, the first detection module, and the second detection module, respectively. It determines whether the preparation of silicon carbide particles meets the preset standard based on the purity of the silicon carbide particles, determines whether the preparation of silicon carbide-based composite phase change substrate meets the preset standard based on the heat storage coefficient and thermal conductivity of the silicon carbide-based composite phase change substrate, and adjusts the operating parameters of the system based on the determination results.

[0051] Specifically, the carbon fiber felt, such as viscose-based silicon carbide felt, is used as a carbon source in the reaction.

[0052] Specifically, the pulverizing module, such as a spherical grinder, is used to pulverize silicon carbide felt to obtain silicon carbide microparticles.

[0053] Specifically, the heat storage coefficient is measured using a HADXRY-II heat storage coefficient tester, and the thermal conductivity is measured in accordance with GB / T 10296-2008 Determination of Steady-State Heat Transfer Properties of Insulation Layers – Circular Tube Method.

[0054] Specifically, the preparation determination module, such as an industrial computer, is not limited to any particular type. It can output the corresponding determination result based on the input parameters and the set requirements.

[0055] Please see Figure 4Specifically, the preparation determination module determines whether the preparation of the silicon carbide microparticles meets a preset standard based on the purity of the silicon carbide microparticles.

[0056] The first determination is that the preparation determination module determines that the preparation of the silicon carbide particles does not meet the preset standard, and reduces the spraying flow rate of the spraying unit based on the difference between the first preset purity threshold and the purity of the silicon carbide particles; the first determination satisfies that the purity is less than the first preset purity threshold of 92.50%.

[0057] The second determination is that the preparation determination module determines that the preparation of the silicon carbide particles does not meet the preset standard, and determines the reason for the preparation not meeting the preset standard based on the concentration of carbon dioxide in the furnace at the end of decarbonization; the second determination satisfies that the purity is greater than or equal to the first preset purity threshold and less than the second preset purity threshold of 98.55%.

[0058] The third determination is that the preparation determination module determines that the preparation of the silicon carbide microparticles meets the preset standard, and continues to run the system according to the current parameters; the third determination satisfies that the purity is greater than or equal to the second preset purity threshold.

[0059] Specifically, the reduction in spray flow rate is positively correlated with the purity difference, which is the difference between the purity of the silicon carbide particles and a first preset purity threshold. That is, the larger the purity difference, the greater the reduction in spray flow rate.

[0060] Specifically, the preparation determination module determines whether the reduction in spray flow rate meets the standard by comparing the purity of the silicon carbide particles in the next batch after the reduction in spray flow rate with the second preset purity threshold. If the purity of the silicon carbide particles is less than the second preset purity threshold, the shaping pressure of the rolling unit is increased to the corresponding value based on the difference between the purity and the second preset purity threshold. If the purity of the silicon carbide particles is greater than or equal to the second preset purity threshold, the system continues to run according to the parameters after the reduction in spray flow rate.

[0061] Specifically, the reasons why the preparation does not meet the preset standard are determined by the preparation determination module based on the concentration of carbon dioxide, including the air intake of the vacuum heating module for decarbonization not meeting the standard and increasing the air intake, or the firing temperature of the silicon carbide felt precursor not meeting the standard and increasing the firing temperature.

[0062] Specifically, the preparation determination module determines that the reason for not meeting the preset standard when the concentration is less than the preset concentration threshold is that the air intake for decarbonization of the vacuum heating module is insufficient. Furthermore, the preparation determination module determines that the reason for not meeting the preset standard when the concentration is greater than or equal to the preset concentration threshold is that the firing temperature of the silicon carbide felt precursor is insufficient. The preset concentration threshold is set to 9.50 × 10⁻⁶. 3 PPM.

[0063] Specifically, the preparation determination module determines the adjustment method for increasing the firing temperature based on the concentration difference, wherein,

[0064] The first temperature adjustment method is that the preparation determination module uses the product of a first preset temperature adjustment coefficient of 1.05 and the firing temperature to determine the adjusted firing temperature; the first temperature adjustment method satisfies that the concentration difference is less than the first preset concentration difference of 860 PPM.

[0065] The second temperature adjustment method is that the preparation determination module uses the product of the second preset temperature adjustment coefficient 1.12 and the firing temperature to determine the adjusted firing temperature; the second temperature adjustment method satisfies that the concentration difference is greater than or equal to the first preset concentration difference and less than the second preset concentration difference of 2050PPM;

[0066] The third temperature adjustment method involves the preparation determination module using the product of a third preset temperature adjustment coefficient of 1.20 and the firing temperature to determine the adjusted firing temperature; the third temperature adjustment method satisfies the condition that the concentration difference is greater than or equal to the second preset concentration difference.

[0067] The concentration difference is the difference between the concentration and the preset concentration threshold.

[0068] Specifically, the preparation determination module preliminarily determines whether the preparation of the silicon carbide-based composite phase change substrate meets the preset standard based on the heat storage coefficient, wherein,

[0069] The first preparation determination is that the preparation determination module initially determines that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard, and increases the impregnation time of the impregnation unit for the preparation of the next batch of materials; the first preparation determination satisfies that the heat storage coefficient is less than the first preset heat storage coefficient of 155W / m 2 ·K;

[0070] The second preparation determination is that the preparation determination module initially determines that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard, and reduces the molding pressure of the molding unit for the next batch of materials; the second preparation determination satisfies that the heat storage coefficient is greater than or equal to the first preset heat storage coefficient and less than the second preset heat storage coefficient of 163W / m 2·K;

[0071] The third preparation determination is that the preparation determination module initially determines that the preparation of the silicon carbide-based composite phase change substrate meets the preset standard, and makes a second determination based on the thermal conductivity whether the preparation of the silicon carbide-based composite phase change substrate meets the preset standard; the third preparation determination satisfies that the heat storage coefficient is greater than the second preset heat storage coefficient.

[0072] Specifically, the preparation determination module makes a secondary determination based on the thermal conductivity to determine whether the preparation of the silicon carbide-based composite phase change substrate meets a preset standard, wherein...

[0073] If the thermal conductivity is less than the first preset thermal conductivity of 322 W / m·K, the preparation determination module will make a second determination that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard, and increase the sintering temperature of the sintering unit for the next batch of materials.

[0074] If the thermal conductivity is greater than or equal to the first preset thermal conductivity and less than the second preset thermal conductivity of 367 W / m·K, the preparation determination module will make a second determination that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard, and will correct the molding pressure of the molding unit to the corresponding value based on the difference between the thermal conductivity and the first preset thermal conductivity.

[0075] If the thermal conductivity is greater than or equal to the second preset thermal conductivity, the system is run according to the current preparation parameters to complete the preparation of the silicon carbide-based composite phase change substrate.

[0076] Specifically, the preparation determination module determines the correction method for the molding pressure based on the difference in thermal conductivity, wherein,

[0077] The first correction method is that the preparation determination module uses the product of a first preset correction coefficient of 1.02 and the molding pressure to determine the corrected molding pressure; the first correction method is that the difference in thermal conductivity is less than the first preset thermal conductivity difference of 12.45 W / m·K;

[0078] The second correction method is that the preparation determination module uses the product of the second preset correction coefficient 1.05 and the molding pressure to determine the corrected molding pressure; the second correction method is that the thermal conductivity difference is greater than or equal to the first preset thermal conductivity difference and less than the second preset thermal conductivity difference 28.60W / m·K;

[0079] The third correction method is that the preparation determination module uses the product of a third preset correction coefficient of 1.09 and the molding pressure to determine the corrected molding pressure; the third correction method is that the difference in thermal conductivity is greater than or equal to the difference in the second preset thermal conductivity.

[0080] The difference in thermal conductivity is the difference between the thermal conductivity and the first preset thermal conductivity.

[0081] The technical solution of the present invention has been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of the present invention.

[0082] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A preparation system for silicon carbide-based composite phase change materials, characterized in that, include: The pretreatment module, used to prepare a silicon carbide felt precursor, includes a cutting unit for cutting carbon fiber felt, a spraying unit located at the output end of the cutting unit for double-sided spraying of the carbon fiber felt, a first drying unit located at the output end of the spraying unit for shaping the sprayed material, a rolling unit located in the first drying unit for rolling and shaping the carbon fiber felt, and a second drying unit located at the output end of the rolling unit for drying the rolled carbon fiber felt; the spraying material is silica gel. A vacuum heating module, which is connected to the pretreatment module, is used to vacuum burn the silicon carbide felt precursor and remove carbon, including a furnace body, an argon gas delivery unit and an air delivery unit respectively connected to the furnace body; A pulverizing module, which is connected to the vacuum heating module, is used to pulverize silicon carbide felt to obtain silicon carbide microparticles. The first detection module is connected to the vacuum heating module and the pulverizing module respectively, and is used to detect the preparation information of the silicon carbide particles, including the purity of the silicon carbide particles and the carbon dioxide concentration in the furnace. The substrate preparation module, connected to the pulverizing module, includes a stirring unit for mixing the silicon carbide particles and additives, a forming unit located at the output end of the stirring unit for pressure forming of the stirred material, a sintering unit located at the output end of the forming unit for sintering the formed material, and an impregnation unit located at the output end of the sintering unit for impregnating the sintered material to obtain a silicon carbide-based composite phase change substrate; the additives are a binder and magnesium powder. The second detection module is connected to the substrate preparation module and is used to detect the performance parameters of the silicon carbide-based composite phase change substrate, including the heat storage coefficient and the thermal conductivity. The preparation and determination module is connected to the pretreatment module, the vacuum heating module, the pulverizing module, the substrate preparation module, the first detection module, and the second detection module, respectively. The purity of the silicon carbide particles is used to determine whether the preparation of the silicon carbide particles meets the preset standard. The heat storage coefficient and thermal conductivity of the silicon carbide-based composite phase change substrate are used to determine whether the preparation of the silicon carbide-based composite phase change substrate meets the preset standards. And, adjust the operating parameters of the system based on the determination results; The preparation determination module determines the reason why the preparation of silicon carbide particles does not meet the preset standard based on the purity of the silicon carbide particles. The preparation determination module determines the reasons why the preparation does not meet the preset standard based on the concentration of carbon dioxide, including the air intake of the vacuum heating module for decarbonization not meeting the standard and increasing the air intake, or the firing temperature of the silicon carbide felt precursor not meeting the standard and increasing the firing temperature. The preparation determination module determines that if the reduction in spray flow rate is not up to standard, it will increase the shaping pressure of the rolling unit to the corresponding value when comparing the purity of the silicon carbide particles in the next batch after the spray flow rate reduction with the second preset purity threshold. When the preparation determination module initially determines, based on the heat storage coefficient, that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard, it increases the impregnation time of the impregnation unit for the next batch of materials, or decreases the molding pressure of the molding unit for the next batch of materials. When the preparation determination module initially determines that the preparation of the silicon carbide-based composite phase change substrate meets the preset standard based on the heat storage coefficient, it then makes a secondary determination based on the thermal conductivity to determine whether the preparation of the silicon carbide-based composite phase change substrate meets the preset standard. If the preparation determination module determines that the preparation of the silicon carbide-based composite phase change substrate does not meet the preset standard based on the thermal conductivity, it increases the sintering temperature of the sintering unit for the next batch of materials, or corrects the forming pressure of the forming unit.

2. The preparation system for a silicon carbide-based composite phase change material according to claim 1, characterized in that, The decrease in the spraying flow rate is positively correlated with the purity difference, which is the difference between a first preset purity threshold and the purity of the silicon carbide particles.

3. The preparation system for a silicon carbide-based composite phase change material according to claim 1, characterized in that, The preparation determination module is equipped with several adjustment methods for increasing the firing temperature, and each adjustment method has a different range for increasing the firing temperature.

4. The preparation system for a silicon carbide-based composite phase change material according to claim 1, characterized in that, The preparation determination module is equipped with several correction methods for the molding pressure correction, and each correction method has a different correction range for the molding pressure.

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