Solar cell and method of manufacturing the same

Abstract

The application relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. The stability of the solar cell is improved. The solar cell comprises a first electrode and a second electrode; a perovskite layer arranged between the first electrode and the second electrode; a first interface passivation layer arranged between the perovskite layer and the first electrode; and a second interface passivation layer arranged between the perovskite layer and the second electrode; wherein the materials of the first interface passivation layer and the second interface passivation layer both comprise inorganic materials.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. BACKGROUND

[0002] Perovskite material is suitable as a light-absorbing layer of a solar cell due to its excellent photoelectric performance and low cost. Compared with the bulk phase of the perovskite layer, the perovskite layer has more interface defects. The interface defects of the perovskite layer will increase the non-radiative recombination of the solar cell, resulting in the performance degradation of the solar cell. In addition, the interface defects of the perovskite layer are also a key factor for inducing the failure of the solar cell under working conditions. SUMMARY

[0003] Therefore, it is necessary to provide a solar cell and a preparation method thereof to improve the stability of the solar cell.

[0004] In a first aspect, a solar cell is provided, comprising:

[0005] a first electrode and a second electrode;

[0006] a perovskite layer disposed between the first electrode and the second electrode;

[0007] a first interface passivation layer disposed between the perovskite layer and the first electrode; and

[0008] a second interface passivation layer disposed between the perovskite layer and the second electrode;

[0009] wherein the materials of the first interface passivation layer and the second interface passivation layer both comprise inorganic materials.

[0010] Optionally, the material of the first interface passivation layer comprises one or more of aluminum oxide, silicon oxide and magnesium oxide; and / or

[0011] the material of the second interface passivation layer comprises one or more of aluminum oxide, silicon oxide and magnesium oxide.

[0012] Optionally, the thickness of the first interface passivation layer is 0.1 nm to 50 nm; and / or

[0013] the thickness of the second interface passivation layer is 0.1 nm to 50 nm.

[0014] Optionally, the first interface passivation layer and the second interface passivation layer both completely cover the perovskite layer.

[0015] Optionally, the solar cell further comprises an electron transport layer disposed between the second electrode and the second interface passivation layer; and / or

[0016] The solar cell further comprises a hole transport layer disposed between the first electrode and the first interface passivation layer.

[0017] Optionally, the material of the electron transport layer comprises two or more of fullerene and its derivatives, graphene and carbon nanotube.

[0018] Optionally, the thickness of the electron transport layer is 0.1 nm to 100 nm.

[0019] Optionally, the solar cell further comprises a base layer disposed on a surface of the first electrode facing away from the perovskite layer.

[0020] The electron transport layer is disposed on a surface of the second interface passivation layer facing away from the perovskite layer.

[0021] The material of the electron transport layer comprises one or more of zinc oxide, titanium oxide, tin oxide and niobium oxide.

[0022] Optionally, the thickness of the electron transport layer is 1 nm to 100 nm.

[0023] Optionally, the hole transport layer is disposed on a surface of the first interface passivation layer facing away from the perovskite layer.

[0024] The solar cell further comprises a base layer and a compact barrier layer disposed between the hole transport layer and the first electrode.

[0025] The base layer is disposed on a surface of the first electrode facing away from the perovskite layer.

[0026] The compact barrier layer is configured to allow holes to be transported between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode.

[0027] Optionally, the material of the compact barrier layer comprises one or more of aluminum oxide, silicon oxide and magnesium oxide.

[0028] Optionally, the thickness of the compact barrier layer is 0.1 nm to 5 nm.

[0029] Optionally, the solar cell comprises a first cell and a second cell stacked together, the first cell comprises the perovskite layer, the first interface passivation layer and the second interface passivation layer, and the second cell is any one of a perovskite solar cell, a silicon-based solar cell, a copper indium gallium selenide solar cell and an organic thin-film solar cell.

[0030] In a second aspect, a method for manufacturing a solar cell is provided, comprising:

[0031] forming a first electrode on a substrate layer;

[0032] stacking a first interface passivation layer, a perovskite layer, a second interface passivation layer and a second electrode on a side of the first electrode facing away from the substrate layer; wherein the perovskite layer is formed between the first electrode and the second electrode, the first interface passivation layer is formed between the first electrode and the perovskite layer, the second interface passivation layer is formed between the second electrode and the perovskite layer, and the materials of the first interface passivation layer and the second interface passivation layer each comprise inorganic material.

[0033] Optionally, the first interface passivation layer and the second interface passivation layer are independently deposited by one of the following methods:

[0034] atomic layer deposition, evaporation, magnetron sputtering and plasma chemical vapor deposition.

[0035] Optionally, the solar cell further comprises an electron transport layer; and the preparation method further comprises:

[0036] forming the electron transport layer on a surface of the second interface passivation layer facing away from the perovskite layer by evaporation before forming the second electrode on the second interface passivation layer; and the material of the electron transport layer comprises two or more of fullerene and its derivatives, graphene and carbon nanotubes.

[0037] Optionally, the evaporation method comprises at least one of the following evaporation modes: thermal evaporation, electron beam evaporation and near-space sublimation evaporation.

[0038] Optionally, the material of the electron transport layer is evaporated by multi-source co-evaporation; or

[0039] the material of the electron transport layer is physically mixed and then evaporated by single-source co-evaporation.

[0040] Optionally, the solar cell further comprises an electron transport layer; and the preparation method further comprises:

[0041] depositing the electron transport layer on a surface of the second interface passivation layer facing away from the perovskite layer by one of the following methods before forming the second electrode on the second interface passivation layer:

[0042] atomic layer deposition, reactive plasma deposition, magnetron sputtering, slot coating, blade coating, spray coating and inkjet printing.

[0043] wherein the material of the electron transport layer comprises one or more of zinc oxide, titanium oxide, tin oxide and niobium oxide.

[0044] Optionally, the solar cell further comprises a hole transport layer and a compact barrier layer; and the preparation method further comprises:

[0045] The compact barrier layer is configured to allow the holes to be transmitted between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode.

[0046] In a third aspect, a solar cell is provided, comprising:

[0047] a first electrode and a second electrode;

[0048] a perovskite layer disposed between the first electrode and the second electrode;

[0049] a hole transport layer disposed between the perovskite layer and the first electrode;

[0050] a compact barrier layer disposed between the first electrode and the perovskite layer, configured to allow the holes to be transmitted between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode.

[0051] Optionally, the material of the compact barrier layer comprises one or more of aluminum oxide, silicon oxide and magnesium oxide.

[0052] Optionally, the thickness of the compact barrier layer is 0.1 nm to 5 nm.

[0053] In a fourth aspect, a preparation method of a solar cell is provided, comprising:

[0054] forming a first electrode on a base layer;

[0055] stacking a compact barrier layer, a hole transport layer, a perovskite layer and a second electrode in sequence on a side of the first electrode away from the base layer;

[0056] The compact barrier layer is configured to allow the holes to be transmitted between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode.

[0057] The solar cell and the preparation method thereof have the following advantages:

[0058] By setting the first interface passivation layer between the first electrode and the perovskite layer, and setting the second interface passivation layer between the second electrode and the perovskite layer, since the materials of the first interface passivation layer and the second interface passivation layer both include inorganic materials, on the one hand, compared with the related art in which only one side of the perovskite layer is provided with an inorganic material for passivation, the stability of the solar cell can be further improved; on the other hand, the inorganic materials are more dense than the passivation layer formed of organic materials, so that the first interface passivation layer and the second interface passivation layer can effectively block ion migration between the perovskite layer and the metal electrode, thereby reducing the problem of stability decline caused by ion migration to the solar cell, further improving the material and performance stability of the solar cell, and reducing performance degradation. BRIEF DESCRIPTION OF DRAWINGS

[0059] Figure 1 A cross-sectional structure schematic diagram of a solar cell provided by an embodiment of the present application;

[0060] Figure 2 A cross-sectional structure schematic diagram of another solar cell provided by an embodiment of the present application;

[0061] Figure 3 A cross-sectional structure schematic diagram of another solar cell provided by an embodiment of the present application;

[0062] Figure 4 A cross-sectional structure schematic diagram of another solar cell provided by an embodiment of the present application;

[0063] Figure 5 A cross-sectional structure schematic diagram of another solar cell provided by an embodiment of the present application.

[0064] REFERENCE NUMERALS:

[0065] 10, base layer; 1, first electrode; 2, second electrode; 3, perovskite layer; 4, first interface passivation layer; 5, second interface passivation layer; 6, hole transport layer; 61, first sub-layer; 62, second sub-layer; 7, electron transport layer; 71, third sub-layer; 72, fourth sub-layer; 8, dense blocking layer. DETAILED DESCRIPTION

[0066] In order to make the above objectives, features and advantages of the present application more apparent and comprehensible, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, a large number of specific details are set forth in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application, so the present application is not limited to the specific embodiments disclosed below.

[0067] Unless otherwise required by context, the term "including" as used herein is to be interpreted as open, i.e. meaning "including, but not limited to." The phrase "one or more" as used herein is to be interpreted as including at least one. The term "example" is used herein to mean, and is used interchangeably with, an example. As used herein, the term "exemplary" or "for example" or "as an example" or "for illustration" means an instance used as a specimen for, or illustration of, something else. Unless otherwise required by context, the use herein of the terms "a," "an" or "the" to

[0068] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are schematic illustrations of idealized embodiments. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments should not be construed as limited to the particular shapes of the regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the precise shape of a region that would be formed in a device and are not intended to limit the scope of the exemplary embodiments.

[0069] "A and / or B" means "A and B" and "A or B".

[0070] In this document, "one or more" means one or more than one, unless otherwise required by context.

[0071] In this document, "for example," "for instance," "such as," and "like," and the like, are used as terms of approximation, and are not used in a restrictive sense. In this document, A (such as B) means B is one non-limiting example of A, unless otherwise required by context. A is not limited to B.

[0072] In this document, "optionally," "optional," "may" means that the event or circumstance either occurs or does not occur, and that if it does not occur, it is not required for the technology to work. If multiple occurrences of "may" occur in a claim, each such "may" is to be interpreted as independent of each other "may."

[0073] In this document, "optionally containing," "optionally comprising," and the like, mean "containing or not containing." "Optional component X" means that component X is present or not present, or that the component X is present or not present.

[0074] In this document, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features.

[0075] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0076] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0077] Compared to organic passivation materials, inorganic passivation materials have the potential to improve the stability of perovskite devices while passivating the perovskite interface due to their better chemical stability.

[0078] For example, in related technologies, there have been reports of single-sided inorganic passivation materials being used to passivate perovskite layers. Specifically, alkali metal halides are prepared on the surface of the perovskite layer facing the electron transport layer for single-sided passivation, while the surface of the perovskite layer facing the hole transport layer is still passivated with organic passivation materials. Therefore, current solar cells still have the problem of poor stability.

[0079] In view of the above technical problems, firstly, some embodiments of this application provide a solar cell, such as... Figures 1-4 As shown, the solar cell includes: a substrate layer 10, a first electrode 1, a second electrode 2, a perovskite layer 3, a first interface passivation layer 4, and a second interface passivation layer 5; the perovskite layer 3 is disposed between the first electrode 1 and the second electrode 2, the first interface passivation layer 4 is disposed between the perovskite layer 3 and the first electrode 1, and the second interface passivation layer 5 is disposed between the perovskite layer 3 and the second electrode 2.

[0080] The first electrode 1 and the second electrode 2 can be the anode and the cathode, respectively, without any specific limitation.

[0081] When the first electrode 1 is the anode and the second electrode 2 is the cathode, then, as Figures 1-4As shown, the base layer 10 can be arranged on the side of the first electrode 1 away from the perovskite layer 3, in which case the solar cell is an inverted solar cell, or the base layer 10 can be arranged on the side of the second electrode 2 away from the perovskite layer 3, in which case the solar cell is a normal solar cell.

[0082] In the case where the first electrode 1 is a cathode and the second electrode 2 is an anode, the base layer 10 can be arranged on the side of the first electrode 1 away from the perovskite layer 3, in which case the solar cell is a normal solar cell, or the base layer 10 can be arranged on the side of the second electrode 2 away from the perovskite layer 3, in which case the solar cell is an inverted solar cell.

[0083] In the present application, as shown in the drawings, Figures 1-4 only the case where the base layer 10 is arranged on the side of the first electrode 1 away from the perovskite layer 3 is shown.

[0084] In some embodiments, as shown in the drawings, Figures 1-4 the solar cell can further include a hole transport layer 6 arranged between the first electrode 1 and the first interface passivation layer 4; and / or, as shown in the drawings, Figures 1-4 the solar cell further includes an electron transport layer 7 arranged between the second electrode 2 and the second interface passivation layer 5.

[0085] In these embodiments, the solar cell is an inverted solar cell. In addition, the solar cell can include at least one of a hole transport layer 6 and an electron transport layer 7, which can facilitate better transport of holes and electrons.

[0086] In some embodiments, the solar cell can be a single-junction perovskite cell or a stacked perovskite cell.

[0087] A perovskite cell has only the "sandwich" structure of perovskite itself, which is a single-junction perovskite cell. A stacked perovskite cell refers to perovskite layers that can be stacked on top of each other or on top of a traditional crystalline silicon solar cell, forming a "series" cell that can absorb a wider spectrum of sunlight.

[0088] In some embodiments, the solar cell includes a stacked first cell and a second cell, the first cell including the first interface passivation layer, the perovskite layer, and the second interface passivation layer, and the second cell being any one of a perovskite cell, a silicon-based solar cell, a copper indium gallium selenide solar cell, and an organic thin-film solar cell.

[0089] In these embodiments, the solar cell is a stacked perovskite cell.

[0090] At this time, taking the example that the base layer is arranged on the side of the first electrode away from the perovskite layer, the first electrode can be the bottom electrode of the stacked perovskite battery, and the second electrode can be the top electrode of the stacked perovskite battery. The first battery and the second battery are arranged between the first electrode and the second electrode.

[0091] In some optional embodiments, the first battery is arranged farther from the base layer 10 than the second battery, which is conducive to making a wide-bandgap top cell and a narrow-bandgap bottom cell. The wide-bandgap top cell absorbs high-energy photons, and the narrow-bandgap bottom cell continues to absorb photon energy, thereby improving the utilization rate of photons.

[0092] In some embodiments, regardless of whether the above solar cell is a single-junction perovskite cell or a stacked perovskite cell, the materials of the first interface passivation layer 4 and the second interface passivation layer 5 include inorganic materials.

[0093] Unlike organic materials that use a certain functional group to passivate the interface defects of the perovskite layer, these inorganic materials can form a field interface passivation effect with fixed charges on the interface of the perovskite layer 3, thereby passivating the interface of the perovskite layer 3. In addition, compared with organic materials, inorganic materials have higher density when formed on the interface of the perovskite layer, and thus these inorganic materials can also block ion migration between the perovskite layer 3 and the metal electrode. For example, if the first interface passivation layer 4 and the second interface passivation layer 5 are not dense enough and are not fully covered between the perovskite layer 3 and the metal electrode, organic cations in the perovskite layer 3 and halide anions will pass through the electron transport layer 7 or the hole transport layer 6 to reach the metal electrode and react with the metal electrode, thereby damaging the metal electrode. At the same time, metal ions in the metal electrode will also migrate to the perovskite layer 3, causing damage to the perovskite layer 3, thereby reducing the material stability of the solar cell and causing serious performance degradation.

[0094] In the embodiments of the present application, the first interface passivation layer 4 is arranged between the first electrode 1 and the perovskite layer 3, and the second interface passivation layer 5 is arranged between the second electrode 2 and the perovskite layer 3. Since the materials of the first interface passivation layer 4 and the second interface passivation layer 5 include inorganic materials, on the one hand, compared with the related art in which inorganic materials are only arranged on one side of the perovskite layer 3 for passivation, the stability of the solar cell can be further improved. On the other hand, the inorganic materials are denser than the passivation layer formed by organic materials, and thus the first interface passivation layer 4 and the second interface passivation layer 5 can effectively block ion migration between the perovskite layer 3 and the metal electrode, thereby reducing the problem of stability reduction caused by ion migration to the solar cell, further improving the material and performance stability of the solar cell, and reducing performance degradation.

[0095] The materials of the first interface passivation layer 4 and the second interface passivation layer 5 are not specifically limited, as long as the materials of the first interface passivation layer 4 and the second interface passivation layer 5 can passivate the interfaces of the perovskite layer 3.

[0096] In some embodiments, the materials of the first interface passivation layer 4 and the second interface passivation layer 5 can be the same or different.

[0097] In some embodiments, the material of the first interface passivation layer 4 includes one or more of aluminum oxide, silicon oxide, and magnesium oxide; and / or, the material of the second interface passivation layer 5 includes one or more of aluminum oxide, silicon oxide, and magnesium oxide.

[0098] In these embodiments, the inorganic materials are adopted, on the one hand, the inorganic materials have good compactness, can effectively block the ion migration between the perovskite layer 3 and the metal electrode, and can prevent the halogen anions in the perovskite from reacting with the metal electrode to cause damage to the metal electrode, thereby improving the material and performance stability of the solar cell; on the other hand, compared with the single-sided inorganic material passivation of the halide salt of the alkali metal in the related art, the inorganic materials have better stability, and the inorganic materials can block the halogen ion migration in the perovskite layer and will not introduce new halogen ions, thereby further reducing the reaction of halogen ions with the metal electrode, and further improving the stability of the solar cell.

[0099] In some embodiments, the thickness of the first interface passivation layer 4 is 0.1 nm to 50 nm; and / or, the thickness of the second interface passivation layer 5 is 0.1 nm to 50 nm.

[0100] In these embodiments, by controlling the thickness of the first interface passivation layer 4 and / or the second interface passivation layer 5 within the above range, the ion migration between the perovskite layer 3 and the metal electrode can be effectively blocked while ensuring the smooth transport of carriers, and the passivation effect of the perovskite layer 3 can be improved, realizing good interface passivation of the perovskite double interface while hindering the migration of ions between the double interfaces.

[0101] In some embodiments, as shown in FIG. 1, the first interface passivation layer 4 and the second interface passivation layer 5 are both full-layer coverage of the perovskite layer 3. Figures 1-4

[0102] In these embodiments, the first interface passivation layer 4 and the second interface passivation layer 5 can be full-layer coverage dense layers, such as dense aluminum oxide layers, silicon oxide layers, or titanium oxide layers, which can be prepared by evaporation, atomic layer deposition, etc., and there are no holes on the layers, which can avoid incomplete coverage, thereby more effectively blocking the ion migration between the perovskite layer 3 and the metal electrode, and further improving the material and performance stability of the solar cell.​

[0103] It should be noted that in the above-mentioned solar cell, the hole transport layer 6 can be a single-layer structure or a multi-layer structure, and the electron transport layer 7 can also be a single-layer structure or a multi-layer structure; no specific limitation is made here.

[0104] When the hole transport layer 6 is a single-layer structure, the material of the hole transport layer may include any organic and / or inorganic material with hole transport functionality; when the hole transport layer 6 is a multi-layer structure, the materials of different layers in the multi-layer structure may be the same or different, and may each independently include any organic and / or inorganic material with hole transport functionality; such as Figures 1-3 As shown, this illustrates the case where the hole transport layer 6 has a single-layer structure, such as... Figure 4 As shown, the hole transport layer 6 includes a first sublayer 61 and a second sublayer 62.

[0105] When the electron transport layer 7 is a single-layer structure, the material of the electron transport layer 7 may include any organic and / or inorganic material with electron transport function; when the electron transport layer 7 is a multi-layer structure, the materials of different layers in the multi-layer structure may be the same or different, and may each independently include any organic and / or inorganic material with electron transport function; such as Figure 1 and Figure 2 As shown, this illustrates the case where the electron transport layer 7 has a single-layer structure, such as... Figure 3 and Figure 4 As shown, the electron transport layer 7 includes a third sublayer 71 and a fourth sublayer 72.

[0106] In some embodiments, the material of the perovskite layer 3 may include a perovskite material with the chemical formula ABX3, wherein A is a monovalent cation, including but not limited to cesium ions (Cs). + ), rubidium ions (Rb + ), methylamino ion (CH3NH3) + ) and formamidinium ion ((CH2(NH2)2 + One or more ions from the group consisting of B; B is a divalent cation, including but not limited to lead ions (Pb). 2+ ), copper ions (Cu) 2+ ), zinc ions (Zn) 2+ Gallium ions (Ga) 2+ ), tin ions (Sn) 2+ ) and calcium ions (Ca 2+ X is one or more ions in the group; X is a monovalent anion, including but not limited to iodide ions (I₂). - ), bromide ions (Br) - ), chloride ions (Cl) - ), fluoride ions (F)- ) and one or more of the ions of thiocyanate (SCN - ) and one or more of the ions of thiocyanate (SCN

[0107] In some embodiments, the material of the first electrode 1 and the second electrode 2 can include any material with electrically conductive properties, such as transparent conductive oxide material, metal material, etc., which are not specifically limited herein.

[0108] In the following embodiments, the electron transport layer 7 is described as a single-layer structure, and it can be understood by those skilled in the art that the following description of the electron transport layer 7 also applies to the case where the electron transport layer 7 is a multi-layer structure.

[0109] It should be noted that in the related art, the fullerene compound can include fullerene (C60) and its derivatives, etc. The fullerene compound has high electron mobility and strong electron extraction capability and is widely used in solar cells. However, the energy level mismatch phenomenon easily occurs between the perovskite layer and the fullerene C60, resulting in an increase in the perovskite layer and the fullerene interface recombination.

[0110] In some embodiments of the present application, the material of the electron transport layer 7 includes two or more of the fullerene compound, graphene, and carbon nanotube.

[0111] Graphene is a two-dimensional carbon nanomaterial composed of carbon atoms in sp 2 hybrid orbitals, which has excellent optical, electrical, and mechanical properties. Carbon nanotubes, also known as buckytubes, are one-dimensional quantum materials with a special structure, with a radial size of nanometer order and an axial size of micrometer order. They have unique structure and excellent mechanical, electrical, and chemical properties.

[0112] In these embodiments, by selecting two or more of the fullerene compound, graphene, and carbon nanotube to prepare the hole transport layer, the energy level of the electron transport layer of the solar cell is adjusted, thereby solving the problem of energy level mismatch between the perovskite layer and C60 in the related art, and further reducing the interface recombination between the perovskite layer and the electron transport layer and reducing the open-circuit voltage loss.

[0113] In some embodiments, the material of the electron transport layer 7 at least includes graphene and / or carbon nanotube.

[0114] In these embodiments, different kinds of carbon nanomaterials can be used to further adjust the energy level of the electron transport layer of the solar cell, so that the energy level matching between the electron transport layer and the perovskite layer can be further achieved, the interface recombination between the perovskite layer and the electron transport layer can be reduced, and the open-circuit voltage loss can be reduced.

[0115] In some embodiments, when the material of the electron transport layer 7 includes two or more of fullerene compounds, graphene and carbon nanotubes, the thickness of the electron transport layer 7 can be 0.1 nm to 100 nm.

[0116] It should be further noted that in the related art, C60 is generally used as the electron transport layer in the inverted solar cell, which is mainly because C60 has high electron mobility and charge extraction capability, and can be deposited on the surface of the perovskite layer by thermal evaporation without damaging the perovskite layer. However, C60 is expensive, which hinders the commercial application of perovskite cells, and C60 has a large absorption in the short-wave band, which is not conducive to its application in perovskite / crystalline silicon and perovskite / CIGS stacked devices based on trans-perovskite. In addition, the interface bonding between C60 and the perovskite layer is weak, resulting in poor mechanical stress stability of the device. Therefore, it is necessary to develop an electron transport layer material to replace C60 to promote the commercial application of perovskite cells.

[0117] Metal oxide electron transport materials such as ZnO, TiO2 and SnO2 have been widely used in the normal solar cell due to their low cost, wide band gap, high mobility, and small absorption in the 300 nm to 1200 nm wave band. However, due to the preparation process, the performance of the metal oxide electron transport material as the electron transport layer in the inverted solar cell is poor. For example, these metal oxide electron transport materials in the inverted solar cell can be prepared by atomic layer deposition (ALD) or reactive plasma deposition (RPD). If these metal oxide electron transport materials are directly prepared on the perovskite layer, the precursors will react with the perovskite layer, resulting in poor performance. If the metal oxide electron transport material is directly deposited on the perovskite layer by RPD, the perovskite layer will be damaged due to the large ion bombardment energy.

[0118] Therefore, in some embodiments, as Figure 2As shown, the base layer 10 is arranged on the surface of the first electrode 1 away from the perovskite layer 3; the electron transport layer 7 is arranged on the surface of the second interface passivation layer 5 away from the perovskite layer 3; and the material of the electron transport layer 7 includes one or more of zinc oxide (ZnO), titanium oxide (such as TiO2), tin oxide (such as SnO2), and niobium oxide (such as Nb2O5).

[0119] In these embodiments, by arranging the electron transport layer 7 on the surface of the second interface passivation layer 5 away from the perovskite layer 3, the solar cell is an inverted solar cell. At this time, the second interface passivation layer 5 can be used to block the Br ions in the perovskite layer 3 from entering the electron transport layer 7, and can passivate the interface of the perovskite layer 3, thereby realizing the application of metal oxide electron transport materials in high-efficiency inverted solar cells and reducing the manufacturing cost of inverted solar cells.

[0120] In addition, the formation of the second interface passivation layer 5 can also effectively reduce the sputtering loss of the metal oxide electron transport material to the perovskite layer when prepared by RPD.

[0121] In order to effectively block the ion migration between the electron transport layer and the perovskite layer, improve the passivation effect, and as much as possible reduce the sputtering loss of the metal oxide electron transport material to the perovskite layer when prepared by RPD, in some optional embodiments, the thickness of the second interface passivation layer 5 is 0.1 nm to 5 nm.

[0122] In some embodiments, when the material of the electron transport layer 7 includes one or more of zinc oxide (ZnO), titanium oxide (such as TiO2), tin oxide (such as SnO2), and niobium oxide (such as Nb2O5), the thickness of the electron transport layer 7 is 1 nm to 100 nm.

[0123] In these embodiments, the thickness of the electron transport layer 7 is 1 nm to 100 nm, which can give the solar cell higher electron transport performance.

[0124] For the hole transport layer 6, similar to the above-mentioned electron transport layer 7, the hole transport layer 6 can also be a single-layer structure or a multi-layer structure. In the following embodiments, the hole transport layer 6 will be taken as an example to be described respectively.

[0125] In the related art, in the inverted solar cell, the hole transport layer 6 is arranged between the transparent conductive oxide layer and the perovskite layer, and especially for the SAM (self-assembled monolayer) layer, when prepared by using the solution method, it is difficult to completely cover the transparent conductive oxide layer and the metal oxide hole transport material, which is easy to cause the perovskite layer and the transparent conductive oxide layer to directly contact, thereby increasing the non-radiative recombination of the perovskite layer 3 interface, reducing the efficiency of the solar cell, and also causing the stability of the solar cell to be reduced.

[0126] Based on this, in some embodiments of the present application, as shown in Figure 3 The solar cell further comprises a substrate layer 10 and a dense barrier layer 8 arranged between the hole transport layer 6 and the first electrode 1, the substrate layer 10 is arranged on the surface of the first electrode 1 away from the perovskite layer 3; the dense barrier layer 8 is used to allow the hole to be transmitted between the first electrode 1 and the hole transport layer 6, and to prevent the perovskite layer 3 from contacting the first electrode 1.

[0127] In these embodiments, the solar cell is an inverted solar cell. At this time, by arranging the dense barrier layer 8 between the hole transport layer 6 and the first electrode 1, in the case that the hole transport layer 6 cannot completely cover the first electrode 1 and the first interface passivation layer 4 fails to completely cover the perovskite layer 3, since the dense barrier layer 8 allows the hole to be transmitted between the first electrode 1 and the hole transport layer 6, and prevents the perovskite layer 3 from contacting the second electrode 2, therefore, the arrangement of the dense barrier layer 8 can avoid the non-radiative recombination caused by the direct contact between the perovskite layer 3 and the transparent conductive oxide layer, and improve the efficiency and stability of the solar cell.

[0128] In other embodiments, the hole transport layer 6 can include a first sub-layer 61 and a second sub-layer 62, at this time, the first sub-layer 61 can be a metal oxide hole transport material, and the second sub-layer 62 can be a SAM layer; the first electrode 1 can be a transparent conductive oxide layer. At this time, the dense barrier layer 8 can be arranged between the first sub-layer 61 and the second sub-layer 62, or the dense barrier layer 8 can be arranged between the first sub-layer 61 and the first electrode 1; both of which can make the dense barrier layer 8 play the role of transmitting the hole and preventing the perovskite layer 3 from contacting the first electrode 1.

[0129] In some embodiments, the material of the dense barrier layer 8 includes one or more of aluminum oxide, silicon oxide and titanium oxide.

[0130] In these embodiments, when the dense barrier layer 8 is arranged between the first sub-layer 61 and the second sub-layer 62, the SAM in the second sub-layer 62 can be self-assembled through dehydration reaction of its own anchoring group (phosphoric acid group, carboxylic acid group, thiol, etc.) and the hydroxyl group on the surface of the dense barrier layer 8, and the anchoring combination between the SAM layer and the dense barrier layer 8 can be achieved.

[0131] In some embodiments, the thickness of the dense barrier layer 8 is 0.1 nm to 5 nm.

[0132] In some embodiments, the thickness of the second sub-layer 62 is 0.1 nm to 20 nm.

[0133] In a second aspect, some embodiments of the present application provide a preparation method of the solar cell according to the first aspect, and the preparation method comprises:

[0134] forming a first electrode on the base layer;

[0135] stacking a first interface passivation layer, a perovskite layer, a second interface passivation layer and a second electrode on the side of the first electrode away from the base layer; wherein the perovskite layer is formed between the first electrode and the second electrode, the first interface passivation layer is formed between the first electrode and the perovskite layer, the second interface passivation layer is formed between the second electrode and the perovskite layer, and the materials of the first interface passivation layer and the second interface passivation layer both comprise inorganic materials.

[0136] The solar cell can be a single-junction perovskite cell or a stacked perovskite cell, which is not specifically limited herein.

[0137] In the case of a single-junction perovskite cell, the first electrode, the first interface passivation layer, the perovskite layer, the second interface passivation layer and the second electrode can be sequentially stacked on the base layer of the solar cell, or the second electrode, the second interface passivation layer, the perovskite layer, the first interface passivation layer and the first electrode can be sequentially stacked on the base layer of the solar cell.

[0138] In the case of a stacked perovskite cell, the first electrode can be the bottom electrode of the stacked perovskite cell, and the second electrode can be the top electrode of the stacked perovskite cell, in which case the first electrode, the bottom cell, the top cell and the second electrode can be sequentially formed on the base layer. Alternatively, the first electrode can be the top electrode of the stacked perovskite cell, and the second electrode can be the bottom electrode of the stacked perovskite cell, in which case the second electrode, the bottom cell, the top cell and the first electrode can be sequentially formed on the base layer.

[0139] The top cell may include the aforementioned first interface passivation layer, perovskite layer, and second interface passivation layer. In this case, when the first electrode is the bottom electrode of a stacked perovskite cell, the first interface passivation layer, perovskite layer, and second interface passivation layer can be sequentially formed on the bottom cell. Similarly, when the first electrode is the bottom electrode of a stacked perovskite cell, the second interface passivation layer, perovskite layer, and first interface passivation layer can be sequentially formed on the bottom cell.

[0140] In the embodiments of this application, such as Figures 1-4 As shown, only the case where the first electrode 1, the first interface passivation layer 4, the perovskite layer 3, the second interface passivation layer 5, and the second electrode 2 are sequentially formed on the substrate layer 10 is illustrated.

[0141] The beneficial technical effects of the solar cell fabrication method provided in this application embodiment are the same as those of the solar cell provided in this application embodiment, and will not be repeated here.

[0142] The specific method for forming the first interface passivation layer 4 and the second interface passivation layer 5 is not limited, as long as the first interface passivation layer 4 and the second interface passivation layer 5 can be formed on opposite sides of the perovskite layer 3 respectively.

[0143] In some embodiments, the first interface passivation layer and the second interface passivation layer are prepared independently by atomic layer deposition, magnetron sputtering, electron beam evaporation or plasma-enhanced chemical vapor deposition (PECVD).

[0144] In all these embodiments, inorganic materials can be deposited to form the first interface passivation layer and the second interface passivation layer.

[0145] In some embodiments, such as Figure 2 As shown, the solar cell further includes: an electron transport layer 7; the fabrication method further includes:

[0146] Before forming the second electrode 2 on the second interface passivation layer 5, an electron transport layer 7 is formed on the surface of the second interface passivation layer 5 away from the perovskite layer 3 by vapor deposition. The material of the electron transport layer 7 includes two or more of the following: fullerene and its derivatives, graphene and carbon nanotubes.

[0147] In these embodiments, the solar cell is an inverted solar cell. At this time, the electron transport layer is prepared by using the evaporation method, so that the electron transport layer can be made thinner, the conformal growth of the electron transport layer on the rough surface of the perovskite / silicon stacked device can be realized, and the application of the electron transport layer in the perovskite / silicon stacked device is facilitated. At the same time, the film thickness of the large-area thin film can be accurately controlled at the nanometer level, which is conducive to the preparation of high-efficiency large-area perovskite cells.

[0148] Of course, in some embodiments, the solar cell can also be a normal solar cell, at which time the electron transport layer can also be prepared by using the evaporation method, and a thin and uniform electron transport layer can also be obtained, which is suitable for the conformal growth of the electron transport layer on the rough surface of the perovskite / silicon stacked device.

[0149] In some embodiments, the evaporation method includes at least one of the following: thermal evaporation, electron beam evaporation, and near-space sublimation evaporation.

[0150] In some embodiments, the material of the electron transport layer is evaporated by using a multi-source co-evaporation method; or

[0151] The material of the electron transport layer is physically mixed and then co-evaporated by using a single source.

[0152] In other embodiments, as shown in Figure 2 The solar cell further includes an electron transport layer 7; and the preparation method further includes:

[0153] Before the second electrode 2 is formed on the second interface passivation layer 5, the electron transport layer 7 is deposited on the surface of the second interface passivation layer 5 away from the perovskite layer 3 by using one of the following methods:

[0154] Atomic layer deposition, reactive plasma deposition (RPD), magnetron sputtering, slot coating, blade coating, spraying, and inkjet printing;

[0155] The material of the electron transport layer 7 includes one or more of the following: zinc oxide (ZnO), titanium oxide (such as TiO2), tin oxide (such as SnO2), and niobium oxide (such as Nb2O5).

[0156] In these embodiments, the application of the metal oxide electron transport material in the inverted solar cell can be realized. At the same time, due to the presence of the second interface passivation layer 5, the sputtering damage of the metal oxide electron transport material to the perovskite layer during the preparation by using the RPD can be effectively reduced.

[0157] In some embodiments, as shown in Figure 3 and Figure 4As shown, the solar cell also includes a hole transport layer 6 and a dense barrier layer 8; the fabrication method further includes:

[0158] Before forming the first interface passivation layer 4 on the first electrode 1, a dense barrier layer 8 and a hole transport layer 6 are formed sequentially on the first electrode 1; the dense barrier layer 8 is used to allow holes to transport between the first electrode 1 and the hole transport layer 6, while preventing the perovskite layer 3 from contacting the first electrode 1.

[0159] In these embodiments, by sequentially forming a dense barrier layer 8 and a hole transport layer 6 on the first electrode 1, the problem of direct contact between the first electrode 1 and the perovskite layer 3 caused by the subsequent fabrication of the hole transport layer 6 and the first interface passivation layer 4 not being able to completely cover the perovskite layer 3 can be avoided. This reduces non-radiative recombination at the perovskite layer 3 interface and improves the efficiency and stability of the solar cell. Simultaneously, the introduction of this dense barrier layer 8 does not affect hole transport between the first electrode 1 and the perovskite layer 3.

[0160] Among them, such as Figure 3 As shown, a dense barrier layer 8 and a hole transport layer 6 are sequentially formed on the first electrode 1, and the hole transport layer 6 is a single-layer structure.

[0161] In some embodiments of this application, the material of the dense barrier layer 8 includes one or more of aluminum oxide, silicon oxide, and magnesium oxide.

[0162] In these embodiments, the dense barrier layer 8 is a dense oxide layer.

[0163] At this time, such as Figure 4 As shown, the hole transport layer 6 can be a multilayer structure. For example, the hole transport layer 6 may include a first sublayer 61 and a second sublayer 62. The first sublayer 61 can be a metal oxide layer, and the second sublayer 62 can be a SAM layer. In this case, before forming the first interface passivation layer 4 on the first electrode 1, a dense barrier layer 8, the first sublayer 61, and the second sublayer 62 can be sequentially formed on the first electrode 1, or, as shown... Figure 4 As shown, a first sublayer 61, a dense barrier layer 8, and a second sublayer 62 are sequentially formed on the first electrode 1. Both allow the dense barrier layer 8 to transmit holes and prevent the perovskite layer 3 from contacting the first electrode 1.

[0164] Meanwhile, when the dense barrier layer 8 is disposed between the first sublayer 61 and the second sublayer 62, the SAM (self-assembled monolayer) layer can achieve self-assembly through its own anchoring groups (phosphate groups, carboxylic acid groups, thiols, etc.) and the hydroxyl groups on the surface of the dense barrier layer 8 via a dehydration reaction, thereby achieving the anchoring bond between the SAM layer and the dense barrier layer 8.

[0165] Due to the self-limiting nature of the SAM layer's own chemical reaction, the SAM material is generally several nanometers thick, thus having high optical transmittance, and can achieve conformal growth on a complex topography substrate layer, thus being suitable for perovskite solar cells on different substrate layers, such as being used in perovskite / crystalline silicon stacked devices. In addition, the SAM material has strong hole extraction capability and small non-radiative recombination with the perovskite layer, and can be used in inverted solar cells to further improve the cell efficiency.

[0166] In some embodiments, the second sub-layer can be prepared by a solution method.

[0167] That is, the SAM layer is prepared by a solution method, and in the above embodiments, the problem of direct contact between the transparent conductive oxide layer and the perovskite layer due to the SAM layer failing to completely cover the transparent conductive oxide layer can be reduced.

[0168] In some embodiments, the first sub-layer can be prepared by one of the following methods: atomic layer deposition, RPD, magnetron sputtering, slot coating, blade coating, spray coating, and inkjet printing.

[0169] In some embodiments, the perovskite layer can be prepared by one of the following methods: spin coating, blade coating, evaporation, printing, spray coating, spray pyrolysis, and slot coating.

[0170] In a third aspect, some embodiments of the present application provide a solar cell, such as Figure 5 As shown, the solar cell includes a substrate layer 10, a first electrode 1, a second electrode 2, a perovskite layer 3, a hole transport layer 6, and a dense barrier layer 8; wherein the perovskite layer 3 is disposed between the first electrode 1 and the second electrode 2, the hole transport layer 6 is disposed between the perovskite layer 3 and the first electrode 1, and the dense barrier layer 8 is disposed between the first electrode 1 and the perovskite layer 3, and the dense barrier layer 8 is used to allow the transmission of holes between the first electrode 1 and the hole transport layer 6, and to prevent the perovskite layer 3 from contacting the first electrode 1.

[0171] Wherein the first electrode 1 is an anode, and the second electrode 2 is a cathode. At this time, the substrate layer 10 can be disposed on the side of the first electrode 1 away from the perovskite layer 3, at which time the solar cell is an inverted solar cell, or the substrate layer 10 can be disposed on the side of the second electrode 2 away from the perovskite layer 3, at which time the solar cell is a normal solar cell.

[0172] In the related art, the hole transport layer 6 is arranged between the transparent conductive oxide layer and the perovskite layer, and in particular for the SAM layer, when prepared by the solution method, it is difficult to completely cover the transparent conductive oxide layer and the metal oxide hole transport material, which is likely to cause the perovskite layer 3 to directly contact the transparent conductive oxide layer, thereby increasing the non-radiative recombination of the perovskite layer 3 interface, reducing the efficiency of the solar cell, and also causing the stability of the solar cell to decrease.

[0173] In the solar cell provided in the embodiments of the present application, the dense barrier layer 8 is arranged between the hole transport layer 6 and the first electrode 1, and in the case that the hole transport layer 6 cannot completely cover the first electrode 1, since the dense barrier layer 8 allows the holes to be transported between the first electrode 1 and the hole transport layer 6 and prevents the perovskite layer 3 from contacting the first electrode 1, the arrangement of the dense barrier layer 8 can avoid the non-radiative recombination caused by the direct contact between the perovskite layer 3 and the transparent conductive oxide layer, thereby improving the efficiency and stability of the solar cell.

[0174] In some embodiments, the material of the dense barrier layer 8 includes one or more of aluminum oxide, silicon oxide and magnesium oxide.

[0175] In these embodiments, the oxides are relatively dense, can prevent the first electrode 1 from contacting the perovskite layer 3, and can transport holes.

[0176] In some embodiments, the thickness of the dense barrier layer 8 is 0.1 nm to 5 nm.

[0177] In these embodiments, the thickness of the dense barrier layer 8 is relatively thin and does not affect the transport of holes.

[0178] In other embodiments, as shown in FIG. 6, the hole transport layer 6 can have a multilayer structure, for example, the hole transport layer 6 can include a first sub-layer 61 and a second sub-layer 62, the first sub-layer 61 can be a metal oxide layer, and the second sub-layer 62 can be a SAM layer; at this time, before the first interface passivation layer 4 is formed on the first electrode 1, the dense barrier layer 8, the first sub-layer 61 and the second sub-layer 62 can be sequentially formed on the first electrode 1, or as shown in FIG. 7, the first sub-layer 61, the dense barrier layer 8 and the second sub-layer 62 are sequentially formed on the first electrode 1. Both can make the dense barrier layer 8 play a role in transporting holes and preventing the perovskite layer 3 from contacting the first electrode 1. Figure 5 Figure 5

[0179] ​​Meanwhile, when the dense barrier layer 8 is arranged between the first sub-layer 61 and the second sub-layer 62, the SAM layer can be self-assembled through dehydration reaction of the anchor groups (phosphoric acid groups, carboxylic acid groups, mercaptans, etc.) of the SAM layer and the hydroxyl groups on the surface of the dense barrier layer 8, and the anchor combination between the SAM layer and the dense barrier layer 8 can be achieved.

[0180] Due to the self-limiting nature of the chemical reaction of the SAM layer, the thickness of the SAM material is generally several nanometers thick, thus the optical transmittance is high, and conformal growth on a complex topography substrate layer can be achieved, thus being suitable for perovskite solar cells with different substrate layers, such as being used in perovskite / crystalline silicon stacked devices. In addition, the SAM material has strong hole extraction capability, and small non-radiative recombination with perovskite contact, and can be used in inverted solar cells to further improve the efficiency of the solar cells.

[0181] Of course, in some embodiments, the solar cell can also include an electron transport layer 7, which can be a single-layer structure or a multi-layer structure. As shown in FIG. 6, a case where the electron transport layer 7 is a multi-layer structure and the electron transport layer 7 includes a third sub-layer 71 and a fourth sub-layer 72 is shown. Figure 5

[0182] In a fourth aspect, some embodiments of the present application provide a method for manufacturing a solar cell, comprising:

[0183] forming a first electrode on a substrate layer;

[0184] stacking a dense barrier layer, a hole transport layer, a perovskite layer and a second electrode in sequence on a side of the first electrode away from the substrate layer; the dense barrier layer is used to allow the transmission of holes between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode. The solar cell provided by the embodiments of the present application is an inverted solar cell, and by stacking the dense barrier layer on the first electrode, the problem of direct contact between the first electrode and the perovskite layer caused by the fact that the subsequently prepared hole transport layer cannot completely cover the perovskite layer can be avoided, especially for the SAM (self-assembled monolayer) layer, which cannot completely cover the transparent conductive oxide layer and the metal oxide hole transport material, and is prone to cause direct contact between the perovskite layer and the transparent conductive oxide layer, thereby increasing the non-radiative recombination of the perovskite layer interface, reducing the efficiency of the solar cell, and also reducing the stability of the solar cell. At the same time, the introduction of the dense barrier layer will not affect the transmission of holes between the first electrode and the perovskite layer.

[0185] In order to objectively evaluate the technical effects of the embodiments of the present application, the present application will be described in detail by the following examples and comparative examples. ​

[0186] In the following examples and comparative examples, all raw materials can be obtained by commercial forms, and in order to keep the reliability of the experiment, the raw materials used in the following examples and comparative examples all have the same physical and chemical parameters or are prepared by the same treatment method.

[0187] Example 1

[0188] The preparation method of the perovskite battery provided in Example 1 is as follows:

[0189] Step 1), providing a transparent glass with a thickness of 1.1 mm;

[0190] Step 2), using magnetron sputtering to prepare an ITO (Indium tin oxide) layer on the transparent glass as a first electrode, and the thickness is 100 nm;

[0191] Step 3), using magnetron sputtering to prepare a hole transport layer NiO on the first electrode, and the thickness is 20 nm;

[0192] Step 4), using magnetron sputtering to prepare a first interface passivation layer SiO x on the hole transport layer, and the thickness is 1 nm;

[0193] Step 5), using slot coating to prepare a perovskite layer on the first interface passivation layer, and the thickness is 500 nm;

[0194] Step 6), using atomic layer deposition to prepare a second interface passivation layer AlO x on the perovskite layer, and the thickness is 1 nm;

[0195] Step 7), using thermal evaporation to prepare an electron transport layer C60 on the second interface passivation layer, and the thickness is 30 nm;

[0196] Step 8), using thermal evaporation to prepare BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) on the electron transport layer C60, and the thickness is 6 nm;

[0197] Step 9), using thermal evaporation to prepare an Ag electrode on the BCP, and the thickness is 150 nm.

[0198] Example 2

[0199] The preparation method of the perovskite battery provided in Example 2 is basically the same as the preparation method of the perovskite battery provided in Example 1, and the difference is that:

[0200] Step 4) is replaced by using atomic layer deposition to prepare a dense barrier layer AlO x; step 4) is followed by a slit coating of a dense barrier layer of AlO x A SAM layer 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid) is prepared thereon, having a thickness of 2 nm.

[0201] Example 3

[0202] The method of preparing the perovskite cell provided in Example 3 is basically the same as the method of preparing the perovskite cell provided in Example 1, except that:

[0203] In step 4), a first interface passivation layer of AlO x ;

[0204] Steps 7) and 8) are replaced by atomic layer deposition of a second interface passivation layer of AlO x SnO2 is prepared thereon, having a thickness of 30 nm.

[0205] Example 4

[0206] The method of preparing the perovskite cell provided in Example 4 is basically the same as the method of preparing the perovskite cell provided in Example 1, except that:

[0207] Step 4) is replaced by atomic layer deposition of a dense barrier layer of AlO x ; step 4) is followed by a slit coating of a dense barrier layer of AlO x A SAM layer 2PACz is prepared thereon, having a thickness of 2 nm;

[0208] Step 7) is replaced by double source co-evaporation of C60 and PCBM ([6,6]-phenyl-C61- butyric acid methyl ester), having a mass ratio of 1:1, having a thickness of 30 nm.

[0209] Example 5

[0210] The method of preparing the perovskite cell provided in Example 5 is basically the same as the method of preparing the perovskite cell provided in Example 1, except that:

[0211] Step 4) is replaced by atomic layer deposition of a first interface passivation layer of AlO x , having a thickness of 1 nm;

[0212] Step 7) is replaced by double source co-evaporation of an electron transport layer on the second interface passivation layer, the electron transport layer comprising: C60 and PCBM, having a mass ratio of 1:1, having a thickness of 30 nm.

[0213] Comparative Example 1

[0214] The preparation method of the perovskite solar cell provided by Comparative Example 1 is basically the same as the preparation method of the perovskite solar cell provided by Example 1, except that:

[0215] Step 4) and step 6) are removed.

[0216] Test Example

[0217] The perovskite solar cells provided by Examples 1-5 and Comparative Example 1 are tested for performance, and the specific test results are shown in Table 1 below:

[0218] Table 1

[0219] Example Voc (V) Jsc (mA cm-2) -2 )]]> FF (%) PCE (%) Comparative Example 1 1.190 20.53 75.58 18.46 Example 1 1.221 20.52 79.49 19.92 Example 2 1.244 20.66 82.56 21.22 Example 3 1.224 20.41 79.44 19.85 Example 4 1.250 20.82 83.49 21.73 Example 5 1.237 20.88 81.84 21.14

[0220] As can be seen from Table 1, by preparing inorganic passivation layers (such as first interface passivation layer and second interface passivation layer) on both sides of the perovskite layer, or by setting a dense barrier layer between the perovskite layer and the metal oxide hole transport layer, the open circuit voltage, fill factor and photoelectric conversion efficiency of the solar cell can be greatly improved. In Example 3, tin oxide is prepared by atomic layer deposition as an electron transport layer, which can improve the open circuit voltage of the solar cell to some extent compared with the use of C60 to prepare the electron transport layer in Example 1, and the photoelectric conversion efficiency is not much different from Example 1, which shows that the introduction of the second interface passivation layer can realize the application of the metal oxide electron transport material in the high-efficiency inverted solar cell, and the electromagnetic transport performance of the metal oxide electron transport material is improved. In Example 5, C60 and PCBM are prepared by double-source co-evaporation, which can further improve the open circuit voltage, short circuit current, fill factor and photoelectric conversion efficiency of the solar cell to some extent.

[0221] In Example 2, a dense barrier layer AlO x is prepared between the SAM and the hole transport layer NiO, which can further improve the open circuit voltage, short circuit current, fill factor and photoelectric conversion efficiency of the solar cell to some extent. And the improvement effect in Example 2 is better than that in Example 1 where the first interface passivation layer is prepared on the hole transport layer. In Example 4, a dense barrier layer AlO x is prepared between the SAM and the hole transport layer NiO, and at the same time, C60 and PCBM are prepared by double-source co-evaporation, which can further improve the open circuit voltage and short circuit current, fill factor and photoelectric conversion efficiency of the solar cell to some extent. And compared with Example 5, Example 4 is also better than the case where the first interface passivation layer is prepared on the hole transport layer in Example 5.

[0222] Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, it is to be understood that the application embraces all such possible combinations.

[0223] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, some modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A solar cell, characterized by, The solar cell comprises: a first electrode and a second electrode; a perovskite layer disposed between the first electrode and the second electrode; a first interface passivation layer disposed between the perovskite layer and the first electrode; and a second interface passivation layer disposed between the perovskite layer and the second electrode; wherein the solar cell is a single-junction perovskite cell or a stacked perovskite cell, the first interface passivation layer and the second interface passivation layer both completely cover the perovskite layer, and the materials of the first interface passivation layer and the second interface passivation layer are both selected from aluminum oxide; the solar cell further satisfies one of the following features: (1) the solar cell further comprises a hole transport layer disposed between the first electrode and the first interface passivation layer, the hole transport layer comprises a first sub-layer and a second sub-layer, the first sub-layer is a metal oxide layer, and the second sub-layer is a self-assembled monolayer; (2) the solar cell further comprises an electron transport layer disposed between the second electrode and the second interface passivation layer, and the material of the electron transport layer comprises two or more of fullerene and its derivatives, graphene, and carbon nanotubes. The thickness of the first interface passivation layer is 0.1 nm to 50 nm; and / or 2. The solar cell according to claim 1, characterized in that, The thickness of the second interface passivation layer is 0.1 nm to 50 nm. The thickness of the electron transport layer is 0.1 nm to 100 nm.

3. The solar cell of claim 1, wherein The solar cell further comprises a base layer and a dense barrier layer disposed between the hole transport layer and the first electrode; 4. The solar cell according to any one of claims 1 to 3, wherein The base layer is disposed on the surface of the first electrode away from the perovskite layer; The dense barrier layer is used to allow the transmission of holes between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode. The material of the dense barrier layer comprises one or more of aluminum oxide, silicon oxide, and magnesium oxide.

5. The solar cell according to claim 4, characterized in that, The thickness of the dense barrier layer is 0.1 nm to 5 nm.

6. The solar cell of claim 4, wherein, The stacked perovskite cell comprises a first cell and a second cell stacked together; 7. The solar cell according to any one of claims 1 to 3, 5 to 6, wherein The first cell comprises the perovskite layer, the first interface passivation layer, and the second interface passivation layer, and satisfies at least one of the features of claim 1; The second cell is any one of a perovskite cell, a silicon-based solar cell, a copper indium gallium selenide solar cell, and an organic thin-film solar cell. The method comprises:

8. A method for producing a solar cell, characterized by, forming a first electrode on a base layer; stacking a first interface passivation layer, a perovskite layer, a second interface passivation layer, and a second electrode on the side of the first electrode away from the base layer to obtain a solar cell; wherein the perovskite layer is formed between the first electrode and the second electrode, the first interface passivation layer is formed between the first electrode and the perovskite layer, and the second interface passivation layer is formed between the second electrode and the perovskite layer; the materials of the first interface passivation layer and the second interface passivation layer are both selected from aluminum oxide; the solar cell further satisfies at least one of the following features: ​ (1) the solar cell further comprises a hole transport layer, the hole transport layer is arranged between the first electrode and the first interface passivation layer, the hole transport layer comprises a first sub-layer and a second sub-layer, the first sub-layer is a metal oxide layer, and the second sub-layer is a self-assembled monolayer; (2) the solar cell further comprises an electron transport layer, the electron transport layer is arranged between the second electrode and the second interface passivation layer, and materials of the electron transport layer include two or more than two of fullerene and derivatives thereof, graphene and carbon nanotubes.

9. The preparation method according to claim 8, characterized in that, The first interface passivation layer and the second interface passivation layer are independently obtained by one of the following methods: atomic layer deposition, evaporation method, magnetron sputtering and plasma chemical vapor deposition.

10. The production method according to claim 8 or 9, characterized by, The preparation method of the electron transport layer comprises: Before forming the second electrode on the second interface passivation layer, the electron transport layer is formed on the surface of the second interface passivation layer away from the perovskite layer by using an evaporation method.

11. The method of claim 10, wherein, The evaporation method includes at least one of the following: thermal evaporation, electron beam evaporation and near-space sublimation evaporation.

12. The method of claim 10, wherein, The materials of the electron transport layer are evaporated by using a multi-source co-evaporation method; or The materials of the electron transport layer are physically mixed and then evaporated by using a single-source co-evaporation method.

13. The production method according to claim 8 or 9, characterized by, The solar cell further comprises a dense barrier layer; and the preparation method further comprises: Before forming the first interface passivation layer on the first electrode, the dense barrier layer and the hole transport layer are sequentially formed on the first electrode; and the dense barrier layer is used to allow holes to be transmitted between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode.

14. A solar cell, characterized by, Comprise: a first electrode and a second electrode; a perovskite layer arranged between the first electrode and the second electrode; a hole transport layer arranged between the perovskite layer and the first electrode; the hole transport layer comprises a first sub-layer and a second sub-layer, the first sub-layer is arranged on the first electrode, the first sub-layer is a metal oxide layer, and the second sub-layer is a self-assembled monolayer; a dense barrier layer arranged between the first sub-layer and the second sub-layer; the dense barrier layer is used to allow holes to be transmitted between the first electrode and the hole transport layer, and to prevent the perovskite layer from contacting the first electrode; and the material of the dense barrier layer is selected from aluminum oxide.

15. The solar cell of claim 14, wherein, The thickness of the dense barrier layer is 0.1 nm to 5 nm.

16. A method of producing a solar cell as claimed in any one of claims 14 to 15, characterised in that, Comprise: forming a first electrode on a base layer; forming the dense barrier layer, the hole transport layer, the perovskite layer and the second electrode on the side of the first electrode away from the base layer.

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