Radio frequency power amplifier, and method for controlling drain voltage of radio frequency power amplifier

Abstract

The present application discloses a radio frequency power amplifier and a control method for the drain voltage of the radio frequency power amplifier, and belongs to the field of communication technology. The radio frequency power amplifier includes: a power supply unit connected to a power amplifier unit, inputting a drain voltage to the power amplifier unit; the power amplifier unit is used to amplify the input radio frequency signal and output the amplified radio frequency signal; wherein the power supply unit determines the first output value of the drain voltage in a first time slot according to the first radio frequency output power of the power amplifier unit in a second time slot, and adjusts the drain voltage to the first output value, and in the second time slot, maintains the voltage value of the drain voltage at the first output value, the first time slot is a non-working time slot of the radio frequency power amplifier, and the second time slot is a working time slot of the radio frequency power amplifier adjacent to the first time slot after the first time slot.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of communication technology, and in particular to a radio frequency power amplifier and a method for controlling the drain voltage of the radio frequency power amplifier. Background Art

[0002] Reducing the power consumption of the RF power amplifier (PA) is the key to reducing the power consumption of wireless communication base stations. The service load of wireless communication base stations fluctuates greatly over time and is in a light load state most of the time. Wireless communication base stations mostly use linear power amplifiers. When the drain voltage and output power of the power amplifier match and the power amplifier works in a critical saturation state, the efficiency is optimal. However, in traditional technologies, the power amplifier uses a DC power supply and sets the power amplifier drain voltage with reference to the maximum RF output power. Therefore, when the RF output power of the power amplifier is low, its efficiency is not high, resulting in high power consumption of the power amplifier. Summary of the invention

[0003] The embodiments of the present application provide a radio frequency power amplifier and a method for controlling the drain voltage of the radio frequency power amplifier, which can significantly reduce the power consumption of the power amplifier.

[0004] In a first aspect, a radio frequency power amplifier is provided, comprising: a power supply unit connected to a power amplifier unit, inputting a drain voltage to the power amplifier unit; the power amplifier unit is used to amplify the input radio frequency signal and output the amplified radio frequency signal; wherein the power supply unit determines a first output value of the drain voltage in a first time slot according to a first radio frequency output power of the power amplifier unit in a second time slot, and adjusts the drain voltage to the first output value, and in the second time slot, maintains the voltage value of the drain voltage at the first output value, the first time slot is a non-working time slot of the radio frequency power amplifier, and the second time slot is a working time slot of the radio frequency power amplifier that is adjacent to the first time slot and follows the first time slot.

[0005] In a second aspect, a method for controlling the drain voltage of an RF power amplifier is provided, comprising: determining a first output value of the drain voltage input to the power amplifier unit in a first time slot according to a first RF output power of the power amplifier unit of the RF power amplifier in a second time slot, wherein the first time slot is a non-working time slot of the RF power amplifier, and the second time slot is a working time slot of the RF power amplifier that is adjacent to the first time slot and subsequent to the first time slot; in the first time slot, adjusting the drain voltage input to the power amplifier unit from the power supply unit of the RF power amplifier to the first output value, and maintaining the drain voltage input to the power amplifier unit at the first output value in the second time slot.

[0006] According to a third aspect, a communication device is provided, comprising a processor and a memory, wherein the memory stores a program or instruction that can be executed on the processor, and when the program or instruction is executed by the processor, the steps of the method described in the second aspect are implemented.

[0007] In a fourth aspect, a computer-readable storage medium is provided, characterized in that at least one computer program is stored in the computer-readable storage medium, and the computer program is loaded and executed by a processor to implement the steps of the method described in the second aspect.

[0008] In a fifth aspect, a chip is provided, comprising a processor and a communication interface, wherein the communication interface is coupled to the processor, and the processor is used to run a program or instruction to implement the steps of the method described in the second aspect.

[0009] In an embodiment of the present application, a power supply unit is connected to a power amplifier unit and inputs a drain voltage to the power amplifier unit; the power amplifier unit is used to amplify the input RF signal and output the amplified RF signal; wherein the power supply unit determines a first output value of the drain voltage in a first time slot according to a first RF output power of the power amplifier unit in a second time slot, and adjusts the drain voltage to the first output value, and in the second time slot, maintains the voltage value of the drain voltage at the first output value, the first time slot is a non-working time slot of the RF power amplifier, and the second time slot is a working time slot of the RF power amplifier after the first time slot and adjacent to the first time slot, thereby reducing the power consumption of the power amplifier.

[0010] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0012] Figure 1 is a schematic diagram of the structure of an envelope tracking system in the related art;

[0013] Figure 2 It is a structural schematic diagram of a radio frequency power amplifier disclosed in an embodiment of the present application;

[0014] Figure 3 It is a schematic diagram of the principle of the radio frequency power amplifier disclosed in the embodiment of the present application;

[0015] Figure 4 It is a schematic diagram of the principle of the radio frequency power amplifier disclosed in the embodiment of the present application;

[0016] Figure 5 It is a schematic diagram of the principle of the radio frequency power amplifier disclosed in the embodiment of the present application;

[0017] Figure 6 is another structural schematic diagram of the radio frequency power amplifier disclosed in the embodiment of the present application;

[0018] Figure 7 It is another principle schematic diagram of the radio frequency power amplifier disclosed in the embodiment of the present application;

[0019] Figure 8 It is a flow chart of a method for controlling the drain voltage of a radio frequency power amplifier disclosed in an embodiment of the present application;

[0020] Fig. 9 It is a structural diagram of a communication device disclosed in an embodiment of the present application. DETAILED DESCRIPTION

[0021] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0022] Figure 1 An envelope tracking (ET) system 100 in the related art is shown. In the ET system 100, the envelope detection unit 110 detects the envelope of the radio frequency (RF) input signal as a reference voltage for the ET power supply 120; the output of the ET power supply 120 is connected to the drain of the power amplifier PA130, providing the power amplifier 130 with a drain voltage that follows the envelope change. The ET technology can significantly reduce the loss of the power amplifier, especially in the case of a high peak to average power ratio (PAPR).

[0023] However, with the continuous evolution of wireless communication technology, the bandwidth of the channel and the signal peak-to-average ratio (PAPR) continue to increase, requiring ET power supplies to achieve envelope signal tracking with larger bandwidth and swing, which significantly reduces the feasibility of ET power supplies. Moreover, since the nonlinear characteristics of the RF power amplifier will change with the drain voltage, temperature, time, etc., a digital pre-distortion (DPD) unit needs to be designed in the wireless communication base station system to achieve high linearity amplification, and the envelope tracking with larger bandwidth and swing also greatly increases the difficulty of implementing DPD. In addition, since the ET power supply needs to be arranged close to the power amplifier to reduce the influence of the electrical parasitic parameters (such as parasitic inductance, parasitic capacitance, and parasitic resistance) of the power distribution network on the quality of the power amplifier drain voltage signal, the use of ET technology in the massive multiple-input multiple-output (Massive MIMO) wireless communication base station system still has the problems of large number of power supplies, high cost, and large area.

[0024] Another existing technology is the symbol voltage regulation technology, which is similar in principle to the envelope tracking technology, but the former has a larger time granularity of voltage regulation than the latter. The symbol voltage regulation technology also has technical problems and challenges such as power supply voltage regulation bandwidth, high rate, large number of power supplies, high cost, and large area.

[0025] In view of this, the present application proposes a radio frequency power amplifier and a method for controlling the drain voltage of the radio frequency power amplifier.

[0026] Figure 2 A structural schematic diagram of a radio frequency power amplifier provided by an exemplary embodiment of the present application is shown, wherein the radio frequency power amplifier 200 comprises: a power supply unit 210, connected to a power amplifier unit 220, and inputting a drain voltage to the power amplifier unit 220; the power amplifier unit 220 is used to amplify the input radio frequency signal and output the amplified radio frequency signal; wherein the power supply unit 210 determines a first output value of the drain voltage in a first time slot according to a first radio frequency output power of the power amplifier unit 220 in a second time slot, and adjusts the drain voltage to the first output value, and in the second time slot, maintains the voltage value of the drain voltage at the first output value, the first time slot is a non-working time slot of the radio frequency power amplifier, and the second time slot is a working time slot of the radio frequency power amplifier 200 that is adjacent to the first time slot and follows the first time slot.

[0027] In the embodiment of the present application, the working time slot refers to the time limit during which the RF power amplifier 200 performs RF power amplification. For example, when the RF power amplifier 200 is applied to a base station to amplify power of a downlink signal, the working time slot (i.e., the second time slot) refers to the downlink time slot, and the non-working time slot (i.e., the first time slot) refers to the uplink time slot. If the RF power amplifier 200 is applied to a terminal to amplify power of an uplink signal sent by the terminal, the working time slot refers to the uplink time slot, and the non-working time slot refers to the downlink time slot.

[0028] In an optional implementation, the non-working time slot is greater than 100 microseconds. In this implementation, the power supply unit can complete the drain voltage regulation in a relatively long time, and the transient output power and device stress of the power supply unit are both low, which significantly reduces the difficulty of implementing the power supply. Compared with existing technologies such as envelope tracking, this implementation can significantly reduce the difficulty of implementing the power supply unit.

[0029] In an embodiment of the present application, the power supply unit adjusts the drain voltage to the first output value in a non-working time slot, and maintains the drain voltage at the first output value in a working time slot, thereby reducing the power consumption of the power amplifier and avoiding the problem of high power consumption caused by setting the power amplifier drain voltage with reference to the maximum RF output power. In addition, the drain voltage is maintained at the first output value in the working time slot, thereby reducing the difficulty of implementing the DPD technology, eliminating the need for a high-bandwidth power supply, without changing the traditional power supply architecture, and without increasing the number, area and cost of the power supply units.

[0030] The RF power amplifier 200 in the embodiment of the present application can be applied to a time division duplexing (TDD) system or a frequency division duplexing (FDD) system. For example, the non-working time slot and the working time slot of the RF power amplifier 200 can be determined by symbol scheduling.

[0031] In an embodiment of the present application, a communication device is further provided, the communication device comprising the above-mentioned radio frequency power amplifier, wherein the communication device may be a wireless communication base station (also referred to as a base station) or a wireless terminal (also referred to as a terminal).

[0032] Optionally, the communication device may adopt a TDD system. In this optional implementation, when the communication device is a wireless communication base station, the non-working time slot is an uplink time slot, and the working time slot is a downlink time slot; or when the communication device is a wireless terminal, the non-working time slot is a downlink time slot, and the working time slot is an uplink time slot.

[0033] Figure 3 Shows Figure 2A schematic diagram of a radio frequency power amplifier provided in an embodiment, such as Figure 3 As shown, Figure 2 The first time slot in the embodiment may be an uplink time slot. Figure 2 The second time slot in the embodiment may be the second downlink time slot, wherein the time period t1 to t2 is the first downlink time slot of a time division duplex (TDD) wireless communication base station, during which the RF output power of the power amplifier unit 220 is P1, and the drain voltage of the power amplifier unit 220 is V1 and remains unchanged; the time period t2 to t3 is an uplink time slot, during which the power supply unit 210 adjusts the drain voltage output to the power amplifier unit 220 from V1 to V2; the time period t3 to t4 is the second downlink time slot, during which the RF output power of the power amplifier unit 220 is P2, and the drain voltage of the power amplifier unit 220 is V2 and remains unchanged; and P1 <P2,V1<V2。

[0034] Figure 4 Shows Figure 2 Another schematic diagram of the principle of the radio frequency power amplifier provided in the embodiment is as follows: Figure 4 As shown, Figure 2 The first time slot in the embodiment may be an uplink time slot. Figure 2 The second time slot in the embodiment may be the second downlink time slot. The time period t1 to t2 is the first downlink time slot of the TDD wireless communication base station. During this time period, the RF output power of the power amplifier unit 220 is P2, and the drain voltage of the power amplifier unit 220 is V2 and remains unchanged; the time period t2 to t3 is an uplink time slot. During this time period, the power supply unit 210 adjusts the drain voltage output to the power amplifier unit 220 from V2 to V1; the time period t3 to t4 is the second downlink time slot. During this time period, the RF output power of the power amplifier unit 220 is P1, and the drain voltage of the power amplifier unit 220 is V1 and remains unchanged; and P1 <P2,V1<V2。

[0035] In one implementation, the first output value is positively correlated with the first RF output power.

[0036] The first output value is determined according to the first RF output power of the power amplifier unit 220 in the second time slot according to the power supply unit 210 in the first time slot. Figure 3 In the embodiment shown, the first output value of the drain voltage increases from V1 to V2, and the first RF output power increases from P1 to P2, that is, the first RF output power increases as the first output value of the drain voltage increases; Figure 4In the illustrated embodiment, the first output value of the drain voltage decreases from V1 to V2, and the first RF output power decreases from P2 to P1, that is, the first RF output power decreases as the first output value of the drain voltage decreases.

[0037] Through the above Figure 3 and Figure 4 The illustrated embodiment illustrates the working principle of a radio frequency power amplifier 200 proposed in the present application. By adjusting the power amplifier drain voltage in the first time slot, the magnitude of the power amplifier drain voltage in the second time slot is positively correlated with the radio frequency output power of the power amplifier unit 220, thereby reducing the power consumption of the power amplifier unit 220. Furthermore, since the drain voltage remains unchanged in the second time slot, the difficulty of implementing the DPD technology is reduced.

[0038] In an embodiment of the present application, a power supply unit 210 is connected to a power amplifier unit 220, and a drain voltage is input to the power amplifier unit 220; the power amplifier unit 220 is used to amplify the input RF signal and output the amplified RF signal; wherein, the power supply unit 210 determines a first output value of the drain voltage in a first time slot according to a first RF output power of the power amplifier unit in a second time slot, and adjusts the drain voltage to the first output value, and in the second time slot, maintains the voltage value of the drain voltage at the first output value, the first time slot is a non-working time slot of the RF power amplifier, and the second time slot is a working time slot of the RF power amplifier after the first time slot and adjacent to the first time slot, which can reduce the difficulty of implementing the DPD technology, thereby eliminating the need for a high-bandwidth power supply, maintaining the traditional power supply architecture, and increasing the number, area, and cost of power supply units, and can significantly reduce the power consumption of the wireless communication base station power amplifier.

[0039] In one implementation, the second time slot includes multiple symbols, the first output value is determined according to the first RF output power of the power amplifier unit 220 in the first symbol, and the first symbol is the symbol with the largest corresponding first RF output power among the multiple symbols.

[0040] In specific applications, such as Figure 5 As shown, the first time slot may be an uplink time slot, and the second time slot may be a second downlink time slot. The second downlink time slot is composed of a plurality of symbols, namely Figure 5 In the second downlink time slot, the first RF output power corresponding to the symbol B3 is the largest and is P2, and the first output value of the drain voltage of the power amplifier unit 220 is set to V2, corresponding to P2.

[0041] In one implementation, the power supply unit 210 maintains the voltage value of the drain voltage as a second output value in a third time slot, wherein the third time slot is a working time slot before the first time slot and adjacent to the first time slot.

[0042] In another implementation, the second output value is positively correlated with the second RF output power of the power amplifier unit in the third time slot.

[0043] In yet another implementation, the power supply unit 210 maintains the voltage value of the drain voltage as a second output value in a third time slot, wherein the third time slot is a working time slot before the first time slot and adjacent to the first time slot.

[0044] Continue to see Figure 5 , the first time slot may be an uplink time slot, and the third time slot may be the first downlink time slot. The first downlink time slot is composed of multiple symbols, that is, Figure 5 Symbol A1, symbol A2, symbol A3 ... symbol An in the first downlink time slot. The second RF output power corresponding to symbol A2 in the first downlink time slot is the largest and is P1, then the second output value of the drain voltage of the power amplifier unit 220 is set to V1, corresponding to P1, that is, the second output value is positively correlated with the second RF output power of the power amplifier unit 220 in the third time slot.

[0045] Figure 6 Another structural schematic diagram of an RF power amplifier provided by an exemplary embodiment of the present application is shown, and the RF power amplifier 200 also includes: a control unit 230, used to schedule target symbols in multiple target working time slots to the same target working time slot, wherein the target symbol is the N symbols with the largest corresponding RF output power in the multiple target working time slots, and N is an integer greater than 0.

[0046] like Figure 6 As shown, the power supply unit 210 is connected to the power amplifier unit 220 and outputs a drain voltage thereto. The upper control unit 230 can schedule the order of different symbols in the first downlink time slot and the second downlink time slot, or schedule the order of different symbols in the first downlink time slot and the subsequent multiple downlink time slots, so as to reduce the RF output power fluctuation range (peak-to-average ratio) of the power amplifier unit 220 in each downlink time slot, thereby reducing the power amplifier RF output power of multiple downlink time slots.

[0047] like Figure 7As shown, the upper control unit 230 schedules symbol A2 from the first downlink time slot to the second downlink time slot, and symbol B1 from the second downlink time slot to the first downlink time slot. Denote the maximum transmit power of each symbol in the first downlink time slot after scheduling as P1s, and it can be known that P1s < P1. After the above symbol scheduling, in the first downlink time slot, that is, in the time period from t1 to t2, the drain voltage output by the power supply unit 210 to the power amplifier unit 220 is set to V1s and remains unchanged within the first downlink time slot, and V1s < V1. In the uplink time slot, that is, in the time period from t2 to t3, the power supply unit 210 starts and completes the adjustment of the magnitude of the drain voltage output to the power amplifier unit 220, that is, the drain voltage is adjusted from V1s to V2. In the second downlink time slot after the above uplink time slot, that is, in the time period from t3 to t4, the drain voltage output by the power supply unit 210 to the power amplifier unit 220 remains unchanged, and the magnitude of the drain voltage is positively correlated with the output power magnitude of the power amplifier unit 220 within the second downlink time slot.

[0048] In this implementation manner, after symbol scheduling, the drain voltage in the first downlink time slot is reduced from V1 to V1s, further reducing the loss of the power amplifier unit 220.

[0049] It should be noted that as long as the maximum radio frequency output power of the power amplifier in a single downlink time slot is reduced after symbol scheduling, the set value of the drain voltage of the power amplifier can be correspondingly reduced, thereby reducing the loss of the power amplifier unit 220 in this downlink time slot.

[0050] Figure 8 Disclosed is a method for controlling the drain voltage of a radio frequency power amplifier provided by an embodiment of the present application. This method can be executed by an electronic device, and the electronic device may include: a base station and / or a terminal device. In other words, this method can be executed by software or hardware installed in the electronic device. The method includes the following steps:

[0051] Step 810: Determine a first output value of the drain voltage input to the power amplifier unit 220 according to the first radio frequency output power of the power amplifier unit 220 of the radio frequency power amplifier in a second time slot within a first time slot.

[0052] Wherein, the first time slot is a non-working time slot of the radio frequency power amplifier, and the second time slot is a working time slot of the radio frequency power amplifier adjacent to the first time slot after the first time slot.

[0053] In an optional implementation manner, the duration of the non-working time slot is greater than 100 microseconds. In this implementation manner, the power supply unit can complete the drain voltage adjustment within a relatively long time, and the transient output power and device stress of the power supply unit are both low, significantly reducing the implementation difficulty of the power supply. Compared with existing technologies such as envelope tracking, this implementation manner can significantly reduce the implementation difficulty of the power supply unit.

[0054] In a specific application, step 810 can be performed by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0055] Step 820: In the first time slot, the drain voltage input from the power supply unit 210 of the RF power amplifier to the power amplifier unit 220 is adjusted to the first output value, and in the second time slot, the drain voltage input to the power amplifier unit 220 is maintained at the first output value.

[0056] In a specific application, step 820 can be performed by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0057] In an embodiment of the present application, a first output value of a drain voltage input to the power amplifier unit 220 is determined in a first time slot according to a first RF output power of the power amplifier unit 220 of the RF power amplifier in a second time slot, wherein the first time slot is a non-working time slot of the RF power amplifier, and the second time slot is a working time slot of the RF power amplifier that is adjacent to the first time slot and after the first time slot; in the first time slot, the drain voltage input to the power amplifier unit 220 by the power supply unit 210 of the RF power amplifier is adjusted to the first output value, and in the second time slot, the drain voltage input to the power amplifier unit 220 is maintained at the first output value, thereby reducing the difficulty of implementing the DPD technology. In this way, there is no need for a high-bandwidth power supply, the traditional power supply architecture is not changed, the number, area and cost of power supply units are not increased, and the power consumption of the power amplifier of the wireless communication base station can be significantly reduced.

[0058] In one implementation, the first output value is positively correlated with the first RF output power.

[0059] In a specific application, this embodiment can be implemented by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0060] In one implementation, in a first time slot, a first output value of a drain voltage input to the power amplifier unit 220 is determined based on the first RF output power of the power amplifier unit 220 of the RF power amplifier in a second time slot, including: determining the first output value of the drain voltage input to the power amplifier unit 220 based on the first RF output power of the power amplifier unit 220 in a first symbol, wherein the first symbol is a symbol having the largest corresponding first RF output power among multiple symbols.

[0061] In a specific application, this embodiment can be implemented by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0062] In one implementation, the method for controlling the drain voltage of the RF power amplifier also includes: controlling the drain voltage input from the power supply unit 210 to the power amplifier unit 220 to be maintained at a second output value within a third time slot, wherein the third time slot is a working time slot that is before the first time slot and adjacent to the first time slot.

[0063] In a specific application, this embodiment can be implemented by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0064] In one implementation, the second output value is positively correlated with the second RF output power of the power amplifier unit 220 in the third time slot.

[0065] In a specific application, this embodiment can be implemented by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0066] In one implementation, before controlling the drain voltage input from the power supply unit 210 to the power amplifier unit 220 to be maintained at a second output value in the third time slot, the method for controlling the drain voltage of the RF power amplifier also includes: determining the second output value based on the second RF output power of the power amplifier unit 220 in the second symbol, wherein the second symbol is a symbol having the largest corresponding second RF output power among multiple symbols included in the third time slot.

[0067] In a specific application, this embodiment can be implemented by Figure 2 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0068] In one implementation, before determining the first output value of the drain voltage input to the power amplifier unit 220 in the first time slot based on the first RF output power of the power amplifier unit 220 of the RF power amplifier in the second time slot, the method for controlling the drain voltage of the RF power amplifier also includes: scheduling target symbols in multiple target working time slots to the same target working time slot, wherein the target symbols are N symbols with the largest corresponding RF output powers in the multiple target working time slots, and N is an integer greater than 0.

[0069] In a specific application, this embodiment can be implemented by Figure 6 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0070] In one implementation, the non-working time slot of the radio frequency power amplifier is determined by symbol scheduling.

[0071] In a specific application, this embodiment can be implemented by Figure 6 The RF power amplifier 200 shown is executed. The specific implementation method can refer to the description in the above-mentioned RF power amplifier embodiment, which will not be repeated here.

[0072] Optional, such as Fig. 9 As shown, an embodiment of the present application also provides a communication device 900, including a processor 910 and a memory 920, wherein the memory 920 stores programs or instructions that can be executed on the processor 910, and when the programs or instructions are executed by the processor 910, the various processes of the embodiment of the control method of the drain voltage of the above-mentioned radio frequency power amplifier are implemented, and the same technical effect can be achieved. To avoid repetition, they are not repeated here.

[0073] An embodiment of the present application also provides a computer-readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, each process of the above-mentioned method for controlling the drain voltage of the RF power amplifier is implemented, and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.

[0074] The processor is the processor in the communication device described in the above embodiment. The readable storage medium includes a computer readable storage medium, such as a computer read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0075] An embodiment of the present application further provides a chip, which includes a processor and a communication interface, wherein the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the various processes of the above-mentioned embodiment of the method for controlling the drain voltage of the RF power amplifier. To avoid repetition, they are not described here.

[0076] It should be understood that the chip mentioned in the embodiments of the present application can also be called a system-level chip, a system chip, a chip system or a system-on-chip chip, etc.

[0077] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0078] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, a magnetic disk, or an optical disk), and includes a number of instructions for a terminal (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in each embodiment of the present application.

[0079] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A radio frequency power amplifier, characterized in that: include: A power supply unit, connected to the power amplifier unit, inputting a drain voltage to the power amplifier unit; The power amplifier unit is used to amplify the input radio frequency signal and output the amplified radio frequency signal; Among them, the power supply unit determines the first output value of the drain voltage in the first time slot according to the first RF output power of the power amplifier unit in the second time slot, and adjusts the drain voltage to the first output value. In the second time slot, the voltage value of the drain voltage is maintained at the first output value. The first time slot is a non-working time slot of the RF power amplifier, and the second time slot is a working time slot of the RF power amplifier after the first time slot and adjacent to the first time slot. The first output value is positively correlated with the first RF output power, and the working time slot is a time slot in which the RF power amplifier performs RF power amplification.

2. The radio frequency power amplifier according to claim 1, characterized in that: The second time slot includes multiple symbols, the first output value is determined according to the first RF output power of the power amplifier unit in the first symbol, and the first symbol is a symbol with the largest corresponding first RF output power among the multiple symbols.

3. The radio frequency power amplifier according to claim 1, characterized in that: The power supply unit maintains a voltage value of the drain voltage as a second output value in a third time slot, wherein the third time slot is a working time slot before the first time slot and adjacent to the first time slot.

4. The radio frequency power amplifier according to claim 3, characterized in that: The second output value is positively correlated with the second RF output power of the power amplifier unit in the third time slot.

5. The radio frequency power amplifier according to claim 4, characterized in that: The third time slot includes multiple symbols, the second output value is determined according to the second RF output power of the power amplifier unit in the second symbol, and the second symbol is the symbol with the largest corresponding second RF output power among the multiple symbols included in the third time slot.

6. The radio frequency power amplifier according to claim 1, characterized in that: The non-working time slot time is greater than 100 microseconds.

7. The radio frequency power amplifier according to any one of claims 1 to 6, characterized in that: Also includes: A control unit is used to schedule target symbols in multiple target working time slots to the same target working time slot, wherein the target symbols are N symbols with the largest corresponding RF output power in the multiple target working time slots, and N is an integer greater than 0.

8. The radio frequency power amplifier according to any one of claims 1 to 6, characterized in that: The non-working time slot of the radio frequency power amplifier is determined by symbol scheduling.

9. A communication device, characterized in that: A radio frequency power amplifier comprising any one of claims 1 to 8.

10. The communication device according to claim 9, characterized in that The communication device adopts the time division duplex TDD system. When the communication device is a wireless communication base station, the non-working time slot is an uplink time slot, and the working time slot is a downlink time slot; or when the communication device is a wireless terminal, the non-working time slot is a downlink time slot, and the working time slot is an uplink time slot.

11. A method for controlling the drain voltage of a radio frequency power amplifier, characterized in that: include: Determine, in a first time slot, a first output value of a drain voltage input to the power amplifier unit according to a first RF output power of the power amplifier unit of the RF power amplifier in a second time slot, wherein the first time slot is a non-working time slot of the RF power amplifier, and the second time slot is a working time slot of the RF power amplifier that is adjacent to the first time slot and follows the first time slot, and the working time slot is a time slot in which the RF power amplifier performs RF power amplification; In the first time slot, the drain voltage input to the power amplifier unit from the power supply unit of the RF power amplifier is adjusted to the first output value, and in the second time slot, the drain voltage input to the power amplifier unit is maintained at the first output value, and the first output value is positively correlated with the first RF output power.

12. The method according to claim 11, characterized in that Determining a first output value of a drain voltage input to the power amplifier unit in the first time slot according to a first RF output power of the power amplifier unit of the RF power amplifier in the second time slot includes: A first output value of a drain voltage input to the power amplifier unit is determined according to a first RF output power of the power amplifier unit in a first symbol, wherein the first symbol is a symbol having a maximum corresponding first RF output power among the plurality of symbols.

13. The method according to claim 12, characterized in that The method further comprises: The drain voltage input from the power supply unit to the power amplifier unit is controlled to be maintained at a second output value in a third time slot, wherein the third time slot is a working time slot before the first time slot and adjacent to the first time slot.

14. The method according to claim 13, characterized in that The second output value is positively correlated with the second RF output power of the power amplifier unit in the third time slot.

15. The method according to claim 14, characterized in that Before controlling the drain voltage input from the power supply unit to the power amplifier unit to be maintained at a second output value in the third time slot, the method further includes: The second output value is determined according to the second RF output power of the power amplifier unit in a second symbol, wherein the second symbol is a symbol having the largest corresponding second RF output power among a plurality of symbols included in the third time slot.

16. The method according to claim 11, characterized in that The non-working time slot time is greater than 100 microseconds.

17. The method according to any one of claims 11 to 16, characterized in that: Before determining a first output value of a drain voltage input to the power amplifier unit according to a first RF output power of the power amplifier unit of the RF power amplifier in a second time slot in the first time slot, the method further includes: The target symbols in multiple target working time slots are scheduled to the same target working time slot, wherein the target symbols are N symbols with the largest corresponding RF output power in the multiple target working time slots, and N is an integer greater than 0.

18. The method according to any one of claims 11 to 16, characterized in that The non-working time slot of the radio frequency power amplifier is determined by symbol scheduling.

19. A communication device, characterized in that: It includes a processor and a memory, the memory stores a program or instruction that can be run on the processor, and when the program or instruction is executed by the processor, the steps of the method for controlling the drain voltage of the radio frequency power amplifier as described in any one of claims 11 to 18 are implemented.

20. A computer-readable storage medium, characterized in that: At least one computer program is stored in the computer-readable storage medium, and the computer program is loaded and executed by the processor to implement the method for controlling the drain voltage of the radio frequency power amplifier as described in any one of claims 11 to 18.

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