A method, device, equipment and storage medium for controlling crystal equal diameter growth

Abstract

The present invention discloses a crystal isodiametric growth control method, device, equipment and storage medium, the method comprising: obtaining the current isodiametric growth sequence corresponding to the current moment; determining the corresponding heating power variation range based on the current heating power at the current moment, and determining multiple heating power sequences to be selected; predicting crystal growth based on the crystal growth model, the current isodiametric growth sequence, multiple heating power sequences to be selected and the current crystal rise speed at the current moment, and determining the predicted crystal diameter sequence corresponding to each heating power sequence to be selected; determining the target heating power based on the predicted crystal diameter sequence and the target crystal diameter, and adjusting the current heating power at the current moment based on the target heating power to make the crystal grow isodiametrically. Through the technical solution of the embodiment of the present invention, the isodiametric growth of the crystal is achieved at a constant crystal rise speed, avoiding the crystal quality problem caused by the fluctuation of the crystal rise speed.

Description

Technical Field

[0001] The present invention relates to the field of computer technology, and in particular to a crystal equal-diameter growth control method, device, equipment and storage medium. Background Art

[0002] As the main raw material for manufacturing semiconductor chips and photovoltaic cells, the production of single crystal silicon materials has become increasingly important with the rapid development of the electronic information industry. In the production of single crystal silicon materials, the control of the diameter of the crystal rod has an important impact on the crystal quality and production efficiency.

[0003] At present, the traditional method of controlling the diameter of the crystal rod is to use the crystal growth rate as a direct operating variable to control the crystal rod to grow with equal diameter. However, during the crystal growth process, the fluctuation of the crystal growth rate will lead to crystal quality problems. Summary of the invention

[0004] The present invention provides a crystal equal-diameter growth control method, device, equipment and storage medium to achieve equal-diameter growth of crystals at a constant crystal growth rate and avoid crystal quality problems caused by crystal growth rate fluctuations.

[0005] In a first aspect, an embodiment of the present invention provides a method for controlling crystal equal diameter growth, comprising:

[0006] Obtaining a current isodiametric growth sequence corresponding to a current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed, and heating power;

[0007] Determine a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and perform sampling processing on the heating power variation range to determine a plurality of heating power sequences to be selected, each of which includes the sampled plurality of heating powers to be selected;

[0008] Based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, a crystal growth prediction is performed to determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process;

[0009] Based on the predicted crystal diameter sequence and the target crystal diameter, a target heating power matching the target crystal diameter is determined, and based on the target heating power, the current heating power at the current moment is adjusted to allow the crystal to grow with equal diameter.

[0010] In a second aspect, an embodiment of the present invention further provides a crystal equal-diameter growth control device, comprising:

[0011] A historical sequence acquisition module is used to acquire a current isodiametric growth sequence corresponding to a current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed, and heating power;

[0012] A module for determining a sequence to be selected, which determines a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and performs sampling processing on the heating power variation range to determine a plurality of heating power sequences to be selected, each of which includes a plurality of sampled heating powers to be selected;

[0013] A prediction sequence determination module is used to predict crystal growth based on a crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, and determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process;

[0014] The target power determination module is used to determine the target heating power that matches the target crystal diameter based on the predicted crystal diameter sequence and the target crystal diameter, and adjust the current heating power at the current moment based on the target heating power to make the crystal grow with equal diameter.

[0015] In a third aspect, an embodiment of the present invention further provides an electronic device, characterized in that the electronic device comprises: at least one processor; and

[0016] a memory communicatively connected to the at least one processor; wherein,

[0017] The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the crystal isodiameter growth control method provided in any embodiment of the present invention.

[0018] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium, characterized in that the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to execute the crystal equidiametric growth control method provided by any embodiment of the present invention when executing.

[0019] The technical solution of the embodiment of the present invention is to obtain the current isodiametric growth sequence corresponding to the current moment, and the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments. Based on the current heating power at the current moment, the heating power variation range corresponding to the current moment is determined, and the heating power variation range is sampled and processed to determine multiple candidate heating power sequences, which can cover different power variation modes. Based on the crystal growth model, the current isodiametric growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, the crystal growth prediction can be accurately determined. The predicted crystal diameter sequence corresponding to each candidate heating power sequence can improve the accuracy and reliability of the prediction. Based on the predicted crystal diameter sequence and the target crystal diameter, the target heating power matching the target crystal diameter can be determined, and the heating control at the next moment is performed based on the target heating power, so as to ensure that the growth diameter of the crystal is the target crystal diameter in real time at a constant crystal rise speed, thereby realizing the isodiametric growth of the crystal at a constant crystal rise speed and avoiding crystal quality problems caused by fluctuations in the crystal rise speed.

[0020] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 This is a flow chart of a method for controlling crystal equal diameter growth provided according to the first embodiment of the present invention;

[0023] Figure 2 This is a flow chart of a method for controlling crystal equal diameter growth provided according to the second embodiment of the present invention;

[0024] Figure 3 is a schematic structural diagram of a crystal equal-diameter growth control device provided according to Embodiment 3 of the present invention;

[0025] Figure 4 It is a schematic diagram of the structure of an electronic device for implementing the crystal equal-diameter growth control method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0026] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0027] It should be noted that the terms "target", "current", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0028] Embodiment 1

[0029] Figure 1 A flow chart of a method for controlling the equal diameter growth of a crystal is provided for the first embodiment of the present invention. This embodiment is applicable to controlling the equal diameter growth during the crystal growth process. Figure 1 As shown, the method can be performed by a crystal equal-diameter growth control device, which can be implemented in the form of hardware and / or software, and can be configured in an electronic device. Figure 1 As shown, the method specifically comprises the following steps:

[0030] S110, obtaining a current isodiametric growth sequence corresponding to the current moment, the current isodiametric growth sequence including isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, the isodiametric growth data including: crystal diameter, crystal rise speed and heating power.

[0031] The current isodiametric growth sequence corresponding to the current moment may refer to an isodiametric growth sequence corresponding to the current moment and multiple historical moments closest to the current moment, with a preset length. The isodiametric growth sequence may refer to a data sequence that records the crystal diameter, crystal rise speed, and heating power at each moment during the crystal growth process.

[0032] Specifically, based on the current moment, multiple historical moments within a preset length time period closest to the current moment are determined. Based on the current moment and multiple historical moments, a data sequence of crystal diameter, crystal rise speed, and heating power recording the crystal growth process at each moment is obtained, and used as the current equal diameter growth sequence corresponding to the current moment, thereby reflecting the dynamic changes of the crystal growth process in real time.

[0033] Exemplarily, the current moment may be t, and the current isodiametric growth sequence is obtained, which includes the current moment, that is, the isodiametric growth sequence corresponding to the time period t-n+1:t with a preset length n, and the sequence includes the crystal diameter, crystal rise speed and heating power at each moment in the time period. It should be noted that the heating power P corresponding to the current moment in the current isodiametric growth sequence t In fact, it is the actual heating power performed at time t-1

[0034] S120. Determine the heating power variation range corresponding to the current moment based on the current heating power at the current moment, and perform sampling processing on the heating power variation range to determine a plurality of candidate heating power sequences, each candidate heating power sequence including the sampled plurality of candidate heating powers.

[0035] Among them, the current heating power may refer to the heating power currently being used for crystal growth. The heating power variation range may refer to the power variation range generated after floating up and down a preset value with the current heating power as the center. The sequence of heating powers to be selected may refer to a data sequence consisting of multiple possible heating power values ​​sampled within the heating power variation range corresponding to the current moment. The heating power to be selected may refer to multiple possible heating power values ​​sampled within the heating power variation range corresponding to the current moment.

[0036] Specifically, the actual heating power value at the current moment is obtained and determined as the current heating power at the current moment. The current heating power at the current moment is used as the center for fluctuations, and the heating power variation range corresponding to the current moment is determined. The determined heating power variation range is sampled to generate a plurality of candidate heating power sequences, each of which includes a plurality of sampled candidate heating powers. By sampling the heating power variation range, a more accurate and stable heating power sequence can be obtained, which helps to improve the control accuracy of the crystal growth process, reduce fluctuations and errors, and thus improve the quality and performance of the crystal.

[0037] Exemplarily, S120 may include: taking the current heating power at the current moment as the center, determining the heating power variation range corresponding to the current moment based on a preset heating power variation; performing multiple uniform sampling processes on the heating power variation range to determine multiple heating power sequences to be selected.

[0038] The preset heating power variation may refer to a preset reference value or threshold value for determining the range of the heating power variation.

[0039] Specifically, the actual heating power value at the current moment is monitored and recorded in real time by a sensor or other measuring device to obtain the current heating power. With the current heating power at the current moment as the center, a heating power variation range is determined according to a preset heating power variation, and the range is used as the heating power variation range corresponding to the current moment. According to the determined heating power variation range, multiple uniform samplings are performed to ensure the uniformity of the distribution of the sampling points, and multiple heating power sequences to be selected are generated.

[0040] For example, according to the heating power P corresponding to the current time t t Determine the range of heating power, perform multiple uniform sampling, and generate multiple candidate heating power sequences. The length of each candidate heating power sequence is T, corresponding to P t:t+T-1 , the first value in the sequence of candidate heating powers corresponds to the current moment, because the purpose of control is to give the heating power setting at the current moment.

[0041] S130, predicting crystal growth based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise rate at the current moment, and determining the predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise rate remains unchanged during the crystal growth prediction process.

[0042] Among them, the crystal growth model may refer to a mathematical model used to describe the crystal growth process, by mathematically describing the crystal growth process for prediction and analysis. The current crystal rise speed may refer to the upward pulling speed of the crystal rod at the current moment, which is a control quantity. The predicted crystal diameter sequence may refer to a predicted value sequence, which indicates the size of the crystal diameter corresponding to each selected heating power sequence at different time points.

[0043] Specifically, the current isodiameter growth sequence, multiple candidate heating power sequences, and the current crystal growth rate at the current moment are input into a pre-trained crystal growth model for crystal growth prediction, and based on the output of the crystal growth model, the predicted crystal diameter sequence corresponding to each candidate heating power sequence is determined. Through continuous iterative prediction of the crystal growth model, the future trend of crystal diameter changes can be predicted more accurately, reducing errors and fluctuations.

[0044] S140, based on the predicted crystal diameter sequence and the target crystal diameter, determine a target heating power that matches the target crystal diameter, and adjust the current heating power at the current moment based on the target heating power to make the crystal grow with equal diameter.

[0045] The target crystal diameter may refer to the crystal diameter that is expected to be achieved, which is a preset value and can be determined according to actual production requirements, product specifications or application requirements. The target heating power may refer to the candidate heating power corresponding to the predicted crystal diameter sequence that is closest to the target crystal diameter.

[0046] Specifically, the target crystal diameter is set according to actual production needs, product specifications or application requirements. The predicted crystal diameter sequence and the target crystal diameter are compared to screen out the candidate heating power sequence corresponding to the predicted crystal diameter sequence closest to the target value. Based on the screened candidate heating power sequence corresponding to the predicted crystal diameter sequence closest to the target value, select a suitable candidate heating power as the target heating power. The target heating power is input into the heating control system to perform heating control at the current moment. The heating control system adjusts the current heating power at the current moment according to the set target heating power to control the growth process of the crystal so that the growth diameter of the crystal is the target crystal diameter, thereby realizing the determination of the target heating power based on the predicted crystal diameter sequence and the target crystal diameter, and performing precise heating control so that the growth diameter of the crystal reaches the target value, thereby helping to improve the accuracy and stability of the production process, reduce errors and waste, and improve product quality.

[0047] Exemplarily, "determining a target heating power that matches the target crystal diameter based on the predicted crystal diameter sequence and the target crystal diameter" in S140 may include: determining a target deviation between each predicted crystal diameter sequence and the target crystal diameter, and based on the target deviation, determining a target heating power sequence from a plurality of candidate heating power sequences; and determining the first heating power in the target heating power sequence as the target heating power.

[0048] The target deviation may refer to the difference or deviation between each predicted crystal diameter sequence and the target crystal diameter. The target heating power sequence may refer to the candidate heating power sequence corresponding to the predicted crystal diameter sequence with the smallest target deviation from the target crystal diameter.

[0049] Specifically, for each predicted crystal diameter sequence, the absolute value of the difference between each predicted crystal diameter in the predicted crystal diameter sequence and the target crystal diameter is calculated, and the absolute values ​​of each difference are averaged, and the obtained average value is determined as the target deviation between the predicted crystal diameter sequence and the target crystal diameter. Based on the target deviation between each predicted crystal diameter sequence and the target crystal diameter, each target deviation is sorted. According to the sorting result of the target deviation, the selected heating power sequence corresponding to the predicted crystal diameter sequence with the smallest target deviation is selected as the target heating power sequence. In the target heating power sequence, the first heating power is selected as the target heating power. It should be noted that the selection of the target heating power based on the first heating power in the target heating power sequence has a more direct impact on controlling the growth diameter of the crystal.

[0050] Exemplarily, based on the target deviation, a target heating power sequence is determined from multiple candidate heating power sequences, including: comparing the target deviations corresponding to each predicted crystal diameter sequence to obtain a target predicted crystal diameter sequence with the smallest target deviation; and determining the candidate heating power sequence corresponding to the target predicted crystal diameter sequence as the target heating power.

[0051] The target predicted crystal diameter sequence may refer to a sequence in the predicted crystal diameter sequence that is closest to the target crystal diameter. This sequence is considered to be the most matched to the target value and is therefore selected as the target predicted crystal diameter sequence.

[0052] Specifically, the target deviations corresponding to each predicted crystal diameter sequence are compared, the sequence with the smallest target deviation is found, and the sequence is determined as the target predicted crystal diameter sequence. According to the target predicted crystal diameter sequence with the smallest target deviation, the corresponding candidate heating power sequence is determined. This sequence is the target heating power sequence.

[0053] The technical solution of the embodiment of the present invention obtains the current isodiametric growth sequence corresponding to the current moment, and the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments. Based on the current heating power at the current moment, the heating power variation range corresponding to the current moment is determined, and the heating power variation range is sampled and processed to determine multiple candidate heating power sequences, which can cover different power variation modes. Based on the crystal growth model, the current isodiametric growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, the crystal growth prediction can be accurately determined. The predicted crystal diameter sequence corresponding to each candidate heating power sequence can improve the accuracy and reliability of the prediction. Based on the predicted crystal diameter sequence and the target crystal diameter, the target heating power matching the target crystal diameter can be determined, and the current heating power at the current moment is adjusted based on the target heating power to ensure that the growth diameter of the crystal is the target crystal diameter in real time, thereby achieving isodiametric growth of the crystal at a constant crystal rise speed and avoiding crystal quality problems caused by fluctuations in the crystal rise speed.

[0054] Based on the above scheme, the crystal growth model is obtained by training the echo state network model based on the sample isodiametric growth data and the actual crystal diameter corresponding to the sample isodiametric growth data. The specific process is as follows:

[0055] 1. Collect historical crystal pulling process data. Collect multiple pieces of historical data on the equal diameter stage in the crystal pulling process. The historical data of each equal diameter stage constitutes a historical equal diameter growth sequence. Each moment of the sequence includes data related to crystal diameter, heating power, crystal rise speed, etc.

[0056] 2. Construct a crystal growth model. The crystal growth model is constructed based on the historical isodiametric growth sequence of the isodiametric stage in the historical crystal pulling process. The model adopts the structure of a nonlinear autoregressive model with exogenous (NARX), which has the following form:

[0057] y k+1 =f θ (y k-n ,…,y k ,u k-n ,…,u k )

[0058] Where y is the system output, i.e., the crystal diameter, u is the system input, including the crystal rise speed and heating power, and n is the model order. In order to better learn the behavior between historical input and output, the echo state network (ESN) is used to implement the above NARX model f θ .

[0059] The training process of the crystal growth model is as follows:

[0060] (1) Construct a training set. Construct a training set with the collected historical isodiametric growth sequence data. The input X in the i-th training sample (i) is a historical isodiametric growth sequence with a sequence length of n, which is equal to the model order.

[0061]

[0062] The kth element Contains the crystal diameter, crystal rise speed and heating power at the kth moment. Supervision target y (i) is the crystal diameter at time n+1.

[0063] (2) Set the structure and parameters of the echo state network.

[0064] a) Set the input unit size of the echo state network to 3, the output unit size to 1, and the hidden unit size to 100.

[0065] b) Initialize the weights W from the input layer to the hidden layer according to the uniform distribution Uniform(-1,1) ih and the weights W from hidden layer to hidden layer hh The bias b of the hidden layer h Initialized to 0.

[0066] c) Calculate W hh The spectral radius |λ max |, for W hh To scale,

[0067]

[0068] To ensure that the echo state properties are met.

[0069] (3) Train the echo state network. Each input sequence X in (i) Run the echo state network on it to get the final hidden state h (i) , so we get a new data set exist The least squares method is used to find the weight w from the hidden layer to the output layer hy and bias b y .

[0070] Embodiment 2

[0071] Figure 2A flow chart of a crystal isodiameter growth control method provided in Embodiment 2 of the present invention. Based on the above embodiments, this embodiment optimizes the step of "predicting crystal growth based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise rate at the current moment, and determining the predicted crystal diameter sequence corresponding to each candidate heating power sequence". The explanations of the terms that are the same or corresponding to the above embodiments are not repeated here.

[0072] See also Figure 2 Another crystal equal diameter growth control method provided in this embodiment specifically includes the following steps:

[0073] S210, obtaining a current isodiametric growth sequence corresponding to the current moment, the current isodiametric growth sequence including isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, the isodiametric growth data including: crystal diameter, crystal rise speed and heating power.

[0074] S220. Determine the heating power variation range corresponding to the current moment based on the current heating power at the current moment, and perform sampling processing on the heating power variation range to determine a plurality of candidate heating power sequences, each candidate heating power sequence including the sampled plurality of candidate heating powers.

[0075] S230. For each candidate heating power sequence, determine the target equal-diameter growth sequence corresponding to the current sampling point based on the current candidate heating power in the candidate heating power sequence, the current equal-diameter growth sequence and the current crystal rise rate at the current moment, wherein the candidate heating power in the candidate heating power sequence corresponds one-to-one to the sampling point moment.

[0076] Among them, the current candidate heating power may refer to a candidate heating power in the candidate heating power sequence. It should be noted that the first candidate heating power in the candidate heating power sequence corresponds to the current moment, and each subsequent candidate heating power added corresponds to a future moment in chronological order. The current sampling point moment may refer to the moment corresponding to the current candidate heating power. The target isodiametric growth sequence may refer to a sequence consisting of crystal diameter, crystal rise speed and heating power at the current sampling point moment.

[0077] Specifically, for each candidate heating power sequence, the current candidate heating power is determined. Based on the current candidate heating power, the current sampling point time corresponding to the current candidate heating power is determined. Based on the candidate heating power sequence, the current isodiameter growth sequence and the current crystal rise speed at the current moment, the crystal diameter, crystal rise speed and heating power at the current sampling point moment and at each moment in a period of time before the current sampling point moment and closest to the current sampling point moment are determined as the target isodiameter growth sequence corresponding to the current sampling point moment.

[0078] S240: Perform crystal growth prediction based on the crystal growth model and the target isodiameter growth sequence corresponding to the current sampling point, and determine the predicted crystal diameter corresponding to the current sampling point.

[0079] The predicted crystal diameter may refer to the predicted crystal diameter corresponding to the current sampling point.

[0080] Specifically, the target isodiametric growth sequence corresponding to the current sampling point is input into a pre-trained crystal growth model for crystal growth prediction, and the predicted crystal diameter corresponding to the current sampling point is determined based on the output of the crystal growth model. By using the crystal growth model and the target isodiametric growth sequence, the future crystal diameter can be predicted, thereby improving the accuracy and reliability of the prediction, helping to better control the crystal growth process and reduce errors and adjustment time.

[0081] Exemplarily, S240 may include: if the current selected heating power is the first selected heating power in the sequence of selected heating powers, then determining the current equal-diameter growth sequence as the target equal-diameter growth sequence corresponding to the current sampling point; if the current selected heating power is not the first selected heating power in the sequence of selected heating powers, then determining the target equal-diameter growth sequence corresponding to the current sampling point based on the current equal-diameter growth sequence, the predicted crystal diameter corresponding to the historical sampling point, the historical selected heating power, and the current crystal rise speed at the current moment.

[0082] The historical sampling point time may refer to the sampling point time corresponding to the selected heating power before the current selected heating power in the sequence of the selected heating power. The predicted crystal diameter corresponding to the historical sampling point time may refer to the predicted crystal diameter corresponding to the historical sampling point time made based on the crystal growth model. The historical selected heating power may refer to the selected heating power whose sampling point time in the sequence of the selected heating power is the historical sampling point time.

[0083] Specifically, determine the position of the current candidate heating power in the candidate heating power sequence in which it is located, that is, whether the current candidate heating power is the first candidate heating power or the non-first candidate heating power. If the current candidate heating power is the first candidate heating power in the sequence, the current equal-diameter growth sequence is directly determined as the target equal-diameter growth sequence corresponding to the current sampling point. This is because there is no previous data for the first candidate heating power to be used for more complex predictions or adjustments, so the historical data is directly used as a reference. If the current candidate heating power is not the first candidate heating power in the sequence, the number of historical sampling point moments is determined based on the current equal-diameter growth sequence, the predicted crystal diameter and the historical candidate heating power corresponding to the historical sampling point moment, and the current crystal rise rate at the current moment. Based on the number of historical sampling point moments, the historical equal-diameter growth data with the same number and the previous historical moment in the current equal-diameter growth sequence are eliminated. The current equal-diameter growth sequence, the predicted crystal diameter and the historical candidate heating power corresponding to the historical sampling point moment after elimination, and the current crystal rise rate at the current moment are fused, and based on the fusion result, the target equal-diameter growth sequence corresponding to the current sampling point moment is determined.

[0084] Exemplarily, the sequence of heating powers to be selected may be (a, b, c, d), and the corresponding sampling point moments may be (T5, T6, T7, T8). The moments corresponding to the current equal-diameter growth sequence may be (T2, T3, T4, T5). If the current heating power to be selected is the first heating power a to be selected in the sequence of heating powers to be selected (a, b, c, d), the current equal-diameter growth sequence is determined as the target equal-diameter growth sequence corresponding to the current sampling point moment. If the current heating power to be selected is not the first heating power to be selected in the sequence of heating powers to be selected (a, b, c, d), such as the second heating power b to be selected, the current sampling point moment at this time is the sampling point moment T6 corresponding to the heating power b to be selected, and the sampling point moment T5 corresponding to the heating power a to be selected is the historical sampling point moment. Accordingly, the target equal-diameter growth sequence corresponding to the heating power b to be selected is the equal-diameter growth data sequence at the sampling point moment T6 and the three moments before the sampling point moment T6 and closest to the moment T6. Specifically: Based on the historical moments and historical sampling point moments corresponding to the current isodiametric growth sequence, it can be determined that the moment of the target isodiametric growth sequence corresponding to the current sampling point moment T6 is (T3, T4, T5, T6). At this time, the historical isodiametric growth data corresponding to the historical moment (T3, T4) and the historical sampling point moment T5, the predicted crystal diameter, the selected heating power and the crystal rise speed corresponding to the current sampling point moment T6 are spliced ​​in chronological order, and the spliced ​​data sequence is determined as the target isodiametric growth sequence corresponding to the current sampling point moment T6.

[0085] S250, based on the predicted crystal diameter sequence and the target crystal diameter, determine a target heating power that matches the target crystal diameter, and adjust the heating power at the current moment based on the target heating power to allow the crystal to grow with equal diameter.

[0086] The technical solution of the embodiment of the present invention determines the target isodiametric growth sequence corresponding to the current sampling point based on the current selected heating power, the current isodiametric growth sequence and the current crystal rise speed at the current moment in the selected heating power sequence for each selected heating power sequence. Crystal growth prediction is performed based on the crystal growth model and the target isodiametric growth sequence corresponding to the current sampling point, and the predicted crystal diameter corresponding to the current sampling point is determined to ensure that the growth diameter of the crystal is the target crystal diameter in real time, thereby further improving the stability of crystal growth.

[0087] Embodiment 3

[0088] Figure 3 This is a schematic diagram of the structure of a crystal equal diameter growth control device provided in the third embodiment of the present invention. Figure 3 As shown, the device includes: a historical sequence acquisition module 310, a candidate sequence determination module 320, a predicted sequence determination module 330 and a target power determination module 340.

[0089] The historical sequence acquisition module 310 is used to acquire the current isodiametric growth sequence corresponding to the current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed and heating power;

[0090] The module 320 for determining a sequence to be selected determines a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and performs sampling processing on the heating power variation range to determine a plurality of heating power sequences to be selected, each of which includes a plurality of sampled heating powers to be selected;

[0091] A prediction sequence determination module 330 is used to predict crystal growth based on a crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, and determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process;

[0092] The target power determination module 340 is used to determine the target heating power that matches the target crystal diameter based on the predicted crystal diameter sequence and the target crystal diameter, and adjust the current heating power at the current moment based on the target heating power to make the crystal grow with equal diameter.

[0093] The technical solution of this embodiment is to obtain the current isodiametric growth sequence corresponding to the current moment, and the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments. Based on the current heating power at the current moment, the heating power variation range corresponding to the current moment is determined, and the heating power variation range is sampled and processed to determine multiple heating power sequences to be selected, which can cover different power variation modes. Crystal growth prediction is performed based on the crystal growth model, the current isodiametric growth sequence, multiple heating power sequences to be selected, and the current crystal rise speed at the current moment, so that the predicted crystal diameter sequence corresponding to each heating power sequence to be selected can be accurately determined, thereby improving the accuracy and reliability of the prediction. Based on the predicted crystal diameter sequence and the target crystal diameter, the target heating power matching the target crystal diameter can be determined, and the heating power at the current moment is adjusted based on the target heating power to achieve isodiametric growth of the crystal at a constant crystal rise speed, thereby avoiding crystal quality problems caused by fluctuations in the crystal rise speed.

[0094] Optionally, the module 320 for determining the sequence to be selected is specifically used to: determine the heating power variation range corresponding to the current moment based on a preset heating power variation amount and with the current heating power at the current moment as the center; perform multiple uniform sampling processes on the heating power variation range to determine multiple heating power sequences to be selected.

[0095] Optionally, the prediction sequence determination module 330 includes:

[0096] a target sequence determination unit, for each candidate heating power sequence, based on the current candidate heating power in the candidate heating power sequence, the current isodiametric growth sequence and the current crystal rise speed at the current moment, determining the target isodiametric growth sequence corresponding to the current sampling point moment, wherein the candidate heating power in the candidate heating power sequence corresponds to the sampling point moment one by one;

[0097] The predicted diameter determination unit is used to predict crystal growth based on the crystal growth model and the target isodiameter growth sequence corresponding to the current sampling point, and determine the predicted crystal diameter corresponding to the current sampling point.

[0098] Optionally, the predicted diameter determination unit is specifically used to: if the current selected heating power is the first selected heating power in the sequence of selected heating powers, then determine the current equal-diameter growth sequence as the target equal-diameter growth sequence corresponding to the current sampling point; if the current selected heating power is not the first selected heating power in the sequence of selected heating powers, then determine the target equal-diameter growth sequence corresponding to the current sampling point based on the current equal-diameter growth sequence, the predicted crystal diameter corresponding to the historical sampling point and the historical selected heating power, as well as the current crystal rise rate at the current moment.

[0099] Optionally, the target power determination module includes:

[0100] a first target power determination unit, configured to determine a target deviation between each of the predicted crystal diameter sequences and a target crystal diameter, and determine a target heating power sequence from a plurality of heating power sequences to be selected based on the target deviation;

[0101] The second target power determination unit is used to determine the first heating power in the target heating power sequence as the target heating power.

[0102] Optionally, the first target power determination unit is specifically used to: compare the target deviations corresponding to each of the predicted crystal diameter sequences to obtain a target predicted crystal diameter sequence with the smallest target deviation; and determine the candidate heating power sequence corresponding to the target predicted crystal diameter sequence as the target heating power sequence.

[0103] Optionally, the crystal growth model is obtained by training an echo state network model based on sample isodiametric growth data and actual crystal diameters corresponding to the sample isodiametric growth data in advance.

[0104] The crystal equal-diameter growth control device provided in the embodiment of the present invention can execute the crystal equal-diameter growth control method provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0105] Figure 4 A schematic diagram of the structure of an electronic device 12 that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as desktop computers, workstations, servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0106] like Figure 4 As shown, the electronic device 12 is in the form of a general purpose computing device. The components of the electronic device 12 may include, but are not limited to: one or more processors or processing units 16, a system memory 28, and a bus 18 that connects various system components (including the system memory 28 and the processing unit 16).

[0107] Bus 18 represents one or more of several types of bus structures, including a memory bus or memory controller, a peripheral bus, an accelerated graphics port, a processor or a local bus using any of a variety of bus architectures. By way of example, these architectures include, but are not limited to, an Industry Standard Architecture (ISA) bus, a Micro Channel Architecture (MAC) bus, an Enhanced ISA bus, a Video Electronics Standards Association (VESA) local bus, and a Peripheral Component Interconnect (PCI) bus.

[0108] The electronic device 12 typically includes a variety of computer system readable media. These media can be any available media that can be accessed by the electronic device 12, including volatile and non-volatile media, removable and non-removable media.

[0109] The system memory 28 may include computer system readable media in the form of volatile memory, such as random access memory (RAM) 30 and / or cache memory 32. The electronic device 12 may further include other removable / non-removable, volatile / non-volatile computer system storage media. By way of example only, the storage system 34 may be used to read and write non-removable, non-volatile magnetic media ( Figure 4 not shown, usually called a "hard drive"). Although Figure 4 Not shown in the figure, a disk drive for reading and writing to a removable non-volatile disk (e.g., a "floppy disk"), and an optical disk drive for reading and writing to a removable non-volatile optical disk (e.g., a CD-ROM, a DVD-ROM, or other optical media) may be provided. In these cases, each drive may be connected to the bus 18 via one or more data medium interfaces. The system memory 28 may include at least one program product having a set (e.g., at least one) of program modules that are configured to perform the functions of the various embodiments of the present invention.

[0110] A program / utility 40 having a set (at least one) of program modules 42 may be stored, for example, in system memory 28, such program modules 42 including, but not limited to, an operating system, one or more application programs, other program modules, and program data, each of which or some combination may include an implementation of a network environment. Program modules 42 generally perform the functions and / or methods of the embodiments described herein.

[0111] The electronic device 12 may also communicate with one or more external devices 14 (e.g., keyboards, pointing devices, displays 24, etc.), may communicate with one or more devices that enable a user to interact with the electronic device 12, and / or may communicate with any device that enables the electronic device 12 to communicate with one or more other computing devices (e.g., network cards, modems, etc.). Such communication may be performed via an input / output (I / O) interface 22. Furthermore, the electronic device 12 may also communicate with one or more networks (e.g., local area networks (LANs), wide area networks (WANs), and / or public networks, such as the Internet) via a network adapter 20. As shown, the network adapter 20 communicates with other modules of the electronic device 12 via a bus 18. It should be understood that, although not shown in the figure, other hardware and / or software modules may be used in conjunction with the electronic device 12, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems.

[0112] The processing unit 16 executes various functional applications and data processing by running the program stored in the system memory 28, for example, implementing a crystal equal diameter growth control method provided by the embodiment of the present invention, the method comprising:

[0113] Obtaining a current isodiametric growth sequence corresponding to a current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed, and heating power;

[0114] Determine a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and perform sampling processing on the heating power variation range to determine a plurality of heating power sequences to be selected, each of which includes the sampled plurality of heating powers to be selected;

[0115] Based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, a crystal growth prediction is performed to determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process;

[0116] Based on the predicted crystal diameter sequence and the target crystal diameter, a target heating power matching the target crystal diameter is determined, and based on the target heating power, the current heating power at the current moment is adjusted to allow the crystal to grow with equal diameter.

[0117] Of course, those skilled in the art can understand that the processor can also implement the technical solution of the crystal equal-diameter growth control method provided by any embodiment of the present invention.

[0118] This embodiment provides a computer-readable storage medium having a computer program stored thereon. When the program is executed by a processor, the steps of the crystal equal-diameter growth control method provided in any embodiment of the present invention are implemented. The method includes:

[0119] Obtaining a current isodiametric growth sequence corresponding to a current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed, and heating power;

[0120] Determine a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and perform sampling processing on the heating power variation range to determine a plurality of heating power sequences to be selected, each of which includes the sampled plurality of heating powers to be selected;

[0121] Based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, a crystal growth prediction is performed to determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process;

[0122] Based on the predicted crystal diameter sequence and the target crystal diameter, a target heating power matching the target crystal diameter is determined, and based on the target heating power, the current heating power at the current moment is adjusted to allow the crystal to grow with equal diameter.

[0123] The computer storage medium of the embodiment of the present invention can adopt any combination of one or more computer-readable media. The computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. The computer-readable storage medium can be, for example, but not limited to: an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples (non-exhaustive list) of computer-readable storage media include: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this document, a computer-readable storage medium can be any tangible medium containing or storing a program, which can be used by an instruction execution system, device or device or used in combination with it.

[0124] Computer-readable signal media may include data signals propagated in baseband or as part of a carrier wave, which carry computer-readable program code. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium other than a computer-readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device.

[0125] The program code embodied on the computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.

[0126] Computer program code for performing the operation of the present invention may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0127] It should be understood by those skilled in the art that the modules or steps of the present invention described above can be implemented by a general-purpose computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, optionally, they can be implemented by a program code executable by a computer device, so that they can be stored in a storage device and executed by the computing device, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0128] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for controlling crystal equal diameter growth, characterized in that: include: Obtaining a current isodiametric growth sequence corresponding to a current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed, and heating power; Determine a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and perform sampling processing on the heating power variation range to determine a plurality of candidate heating power sequences, each candidate heating power sequence comprising a plurality of sampled candidate heating powers, wherein the candidate heating power sequence refers to a data sequence consisting of a plurality of possible heating power values ​​sampled within the heating power variation range corresponding to the current moment; Based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, a crystal growth prediction is performed to determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process; Based on the predicted crystal diameter sequence and the target crystal diameter, a target heating power matching the target crystal diameter is determined, and based on the target heating power, a current heating power at the current moment is adjusted to allow the crystal to grow with equal diameter; The method of predicting crystal growth based on the crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal growth rate at the current moment, and determining a predicted crystal diameter sequence corresponding to each candidate heating power sequence, includes: For each candidate heating power sequence, based on the current candidate heating power in the candidate heating power sequence, the current isodiametric growth sequence and the current crystal rise speed at the current moment, the target isodiametric growth sequence corresponding to the current sampling point moment is determined, wherein the candidate heating power in the candidate heating power sequence corresponds to the sampling point moment one by one; Based on the crystal growth model and the target isodiameter growth sequence corresponding to the current sampling point, the crystal growth prediction is performed to determine the predicted crystal diameter corresponding to the current sampling point; The step of determining a target isodiametric growth sequence corresponding to a current sampling point based on the current selected heating power in the selected heating power sequence, the current isodiametric growth sequence and the current crystal rise speed at the current moment, comprises: If the current candidate heating power is the first candidate heating power in the candidate heating power sequence, the current equal-diameter growth sequence is determined as the target equal-diameter growth sequence corresponding to the current sampling point; If the current selected heating power is not the first selected heating power in the selected heating power sequence, the target equal-diameter growth sequence corresponding to the current sampling point is determined based on the current equal-diameter growth sequence, the predicted crystal diameter corresponding to the historical sampling point, and the current crystal rise rate at the current moment.

2. The method according to claim 1, characterized in that Based on the current heating power at the current moment, a heating power variation range corresponding to the current moment is determined, and the heating power variation range is sampled and processed to determine a plurality of heating power sequences to be selected, including: Taking the current heating power at the current moment as the center, determining the heating power variation range corresponding to the current moment based on the preset heating power variation; The heating power variation range is uniformly sampled multiple times to determine multiple heating power sequences to be selected.

3. The method according to claim 1, characterized in that Based on the predicted crystal diameter sequence and the target crystal diameter, determining a target heating power matching the target crystal diameter comprises: Determining a target deviation between each of the predicted crystal diameter sequences and a target crystal diameter, and determining a target heating power sequence from a plurality of heating power sequences to be selected based on the target deviation; The first heating power in the target heating power sequence is determined as the target heating power.

4. The method according to claim 3, characterized in that Based on the target deviation, determining a target heating power sequence from a plurality of candidate heating power sequences comprises: Comparing the target deviations corresponding to each of the predicted crystal diameter sequences to obtain a target predicted crystal diameter sequence with the smallest target deviation; The candidate heating power sequence corresponding to the target predicted crystal diameter sequence is determined as the target heating power sequence.

5. The method according to any one of claims 1 to 4, characterized in that: The crystal growth model is obtained by training the echo state network model in advance based on sample isodiametric growth data and the actual crystal diameter corresponding to the sample isodiametric growth data.

6. A crystal equal diameter growth control device, characterized in that: include: A historical sequence acquisition module is used to acquire a current isodiametric growth sequence corresponding to a current moment, wherein the current isodiametric growth sequence includes isodiametric growth data at the current moment and isodiametric growth data at multiple historical moments, wherein the isodiametric growth data includes: crystal diameter, crystal rise speed, and heating power; A module for determining a sequence to be selected, which determines a heating power variation range corresponding to the current moment based on the current heating power at the current moment, and performs sampling processing on the heating power variation range to determine a plurality of heating power sequences to be selected, each of which comprises a plurality of sampled heating powers to be selected, wherein the heating power sequence to be selected refers to a data sequence consisting of a plurality of possible heating power values ​​sampled within the heating power variation range corresponding to the current moment; A prediction sequence determination module is used to predict crystal growth based on a crystal growth model, the current isodiameter growth sequence, multiple candidate heating power sequences and the current crystal rise speed at the current moment, and determine a predicted crystal diameter sequence corresponding to each candidate heating power sequence, wherein the current crystal rise speed remains unchanged during the crystal growth prediction process; A target power determination module is used to determine a target heating power that matches the target crystal diameter based on the predicted crystal diameter sequence and the target crystal diameter, and adjust the current heating power at the current moment based on the target heating power to make the crystal grow with equal diameter; The predicted sequence determination module comprises: a target sequence determination unit, for each candidate heating power sequence, based on the current candidate heating power in the candidate heating power sequence, the current isodiametric growth sequence and the current crystal rise speed at the current moment, determining the target isodiametric growth sequence corresponding to the current sampling point moment, wherein the candidate heating power in the candidate heating power sequence corresponds to the sampling point moment one by one; A predicted diameter determination unit, used to predict crystal growth based on a crystal growth model and a target isodiameter growth sequence corresponding to a current sampling point, and determine a predicted crystal diameter corresponding to the current sampling point; The predicted diameter determination unit is specifically used to: if the current selected heating power is the first selected heating power in the sequence of selected heating powers, then determine the current equal-diameter growth sequence as the target equal-diameter growth sequence corresponding to the current sampling point; if the current selected heating power is not the first selected heating power in the sequence of selected heating powers, then determine the target equal-diameter growth sequence corresponding to the current sampling point based on the current equal-diameter growth sequence, the predicted crystal diameter corresponding to the historical sampling point, the historical selected heating power, and the current crystal rise speed at the current moment.

7. An electronic device, characterized in that: The electronic device comprises: at least one processor; and a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the crystal isodiameter growth control method according to any one of claims 1 to 5.

8. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the crystal isodiameter growth control method according to any one of claims 1 to 5 when executed.

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