A hermetic waveguide-microstrip transition structure based on multi-layer HTCC
By adopting a multi-layer HTCC airtight waveguide-microstrip adaptation structure in microwave chip package, the energy coupling between the metal waveguide and the microstrip line is achieved, solving the oxidation and loss problems caused by unisolated air in traditional structures. , realizes low loss and low echo microwave energy conversion.
Patent Information
- Application Number
- CN202410246750.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-05
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2044-03-05
AI Technical Summary
In the existing microwave chip package, the traditional short-circuit structure makes it difficult to achieve energy conversion between the waveguide and the chip, and the air is not isolated from the transition structure, resulting in oxidation of the subsequent circuit, shortening of the use cycle, and increasing losses.
Adopting a multi-layer HTCC-based airtight waveguide-microstrip adaptation structure, the energy coupling between the metal waveguide and the microstrip line is realized through the top metal plate, the surface vacuum cavity, the medium transmission assembly and the shielding component, and isolate the air and transition. structure, reduce loss.
It extends the use cycle, reduces losses, and achieves high-efficiency conversion and low-echo performance of microwave energy. It is suitable for W-band microwave chip packaging.
Smart Images
Figure CN118156756B_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of microwave devices, and in particular relates to an airtight waveguide-microstrip transition structure based on multi-layer HTCC. Background Art
[0002] Microwave refers to electromagnetic waves with a frequency range of 300MHz to 300GHz (wavelength of 1mm to 1m), and the frequency band is between FM broadcast radio and far infrared. Due to its special location, microwaves have the advantages of wide available frequency band, energy carrying, information transmission, and good penetration. At the same time, they also show a series of special properties of electromagnetic radiation and electromagnetic compatibility, which makes microwaves have great scientific value and broad application prospects in military fields such as radar monitoring, environmental monitoring, radio astronomy, and broadband mobile communications.
[0003] Since microwave analysis needs to comply with the distributed parameter theory and is extremely sensitive to the size of the environment, it is extremely important to reduce the loss of microwaves during transmission. The W band (75 GHz to 110 GHz) is a commonly used band in microwave technology, because most of the waveguide systems in the W band use metal waveguides, and in technologies such as W band RF chip packaging, microstrip lines need to be used as waveguide systems, which cannot directly form a benign interconnection with the traditional W band waveguide system - metal waveguide. Therefore, it is necessary to realize the energy conversion between the waveguide and the chip, that is, to study the energy transition between the chip and the waveguide.
[0004] Existing transition technologies mostly use short-circuit structures, which leads to large overall three-dimensional dimensions. In addition, the air in the waveguide is not isolated from the subsequent circuit of the transition structure, which can easily cause oxidation of the subsequent circuit, shorten the service life, increase the loss, etc. Therefore, an airtight waveguide-microstrip transition structure based on multi-layer HTCC is urgently needed to solve the problem. Summary of the invention
[0005] The object of the present invention is to provide an airtight waveguide-microstrip transition structure based on multi-layer HTCC to solve the above problems.
[0006] To achieve the above object, the present invention provides the following solutions:
[0007] A multi-layer HTCC-based airtight waveguide-microstrip transition structure, comprising: a top metal plate, the top metal plate is provided with two symmetrically arranged top metal plate slots, a second connecting slot is provided between the two top metal plate slots, two ends of the second connecting slot are respectively connected to the corresponding top metal plate slots, and a coplanar waveguide coupling portion is provided in the second connecting slot and the two top metal plate slots;
[0008] A surface vacuum cavity is fixedly connected to the top of the top metal plate, and the surface vacuum cavity covers the second connecting groove and the two grooves of the top metal plate;
[0009] The top of the dielectric transmission component is fixedly connected to the bottom of the top metal plate, and the bottom of the dielectric transmission component is respectively fixedly connected to two symmetrically arranged standard W-band waveguides;
[0010] A first shielding portion and a second shielding portion are provided below the second connecting groove, wherein the first shielding portion is located within the projection area of the second connecting groove, and the second shielding portion is located outside the projection area of the second connecting groove.
[0011] Preferably, the coplanar waveguide coupling portion comprises a microstrip line, the microstrip line is arranged in the second connected slot, a gap is left between the edge of the microstrip line and the inner wall of the second connected slot, two ends of the microstrip line are respectively fixedly connected to one end of the coplanar waveguide, the other end of the coplanar waveguide extends into the corresponding slot of the top metal plate, one end of the coplanar waveguide away from the microstrip line is fixedly connected to an on-board coupling plate, the on-board coupling plate is coaxially arranged in the slot of the top metal plate, and a gap is left between the edge of the on-board coupling plate and the inner wall of the slot of the top metal plate;
[0012] The top metal plate, the microstrip line, the coplanar waveguide and the on-board coupling plate are located in the same plane, and the microstrip line, the coplanar waveguide and the on-board coupling plate are fixedly connected to the top of the dielectric transmission component.
[0013] Preferably, the medium transmission component comprises a plurality of HTTC dielectric plates, an intermediate metal plate is provided between two adjacent HTTC dielectric plates, the intermediate metal plate is fixedly connected to the HTTC dielectric plates, the top of the HTTC dielectric plate located on the top surface is fixedly connected to the bottom of the top metal plate, the bottom of the HTTC dielectric plate located on the bottom surface is fixedly connected to a bottom coupling portion, and the tops of the two standard W-band waveguides are fixedly connected to the bottom of the bottom coupling portion;
[0014] The microstrip line and the on-board coupling plate are fixedly connected to the top of the HTTC dielectric board located at the top.
[0015] Preferably, the bottom coupling portion includes a bottom metal plate, the top of the bottom metal plate is fixedly connected to the bottom of the HTTC dielectric plate located at the bottom, two bottom metal plate slots are symmetrically provided on the bottom metal plate, the two bottom metal plate slots correspond one-to-one to the two standard W-band waveguides, the top of the standard W-band waveguide is fixedly connected to the bottom of the bottom metal plate, a bottom coupling plate is provided in the middle of the inner side of the bottom metal plate slot, a shielding plate is fixedly connected to the inner wall of the bottom metal plate slot, and the bottom coupling plate is fixedly connected to the bottom of the HTTC dielectric plate located at the bottom.
[0016] Preferably, the first shielding portion includes a plurality of internal metallized vias, which are distributed in a matrix within the projection area of the second connecting slot, and the internal metallized vias penetrate the plurality of HTTC dielectric plates and the plurality of intermediate metal plates located below the first layer, and the top of the internal metallized vias contacts the bottom of the top metal plate, and the bottom of the internal metallized vias contacts the top of the bottom metal plate.
[0017] Preferably, the second shielding portion includes a plurality of external metallized vias, the plurality of external metallized vias are evenly distributed along the outer side of the projection area of the second connecting slot, the external metallized vias penetrate the plurality of HTTC dielectric plates and the plurality of intermediate metal plates, the top of the external metallized vias is in contact with the bottom of the top metal plate, and the bottom of the external metallized vias is in contact with the top of the bottom metal plate.
[0018] Preferably, the middle metal plate is provided with two symmetrically arranged through slots, and the through slots are arranged corresponding to the top of the standard W-band waveguide.
[0019] Preferably, at least one of the plurality of intermediate metal plates located at the top is provided with a first connecting groove, the first connecting groove is located between the corresponding two through grooves, the first connecting groove is located directly below the second connecting groove, and the ends of the first connecting groove are respectively connected with the corresponding through grooves;
[0020] The internal metallized vias penetrate through a plurality of the HTTC dielectric plates and a plurality of the intermediate metal plates located below the first intermediate metal plate that does not have the first connecting slot.
[0021] Compared with the prior art, the present invention has the following advantages and technical effects:
[0022] When in use, the standard W-band waveguide is in contact with the dielectric transmission component, wherein one standard W-band waveguide is used for microwave input, and the other standard W-band waveguide is used for microwave output, which is transmitted by the dielectric transmission component, and energy coupling between the metal waveguide-coplanar waveguide coupling part and the coplanar waveguide coupling part-metal waveguide is realized through the coplanar waveguide coupling part. By arranging the coplanar waveguide coupling part in the surface vacuum cavity, the air in the dielectric transmission component is isolated from the coplanar waveguide coupling part, thereby avoiding oxidation of the subsequent circuit of the transition structure of the coplanar waveguide coupling part, extending the service life and reducing the loss. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative labor:
[0024] Figure 1 It is a schematic diagram of the structure of the present invention;
[0025] Figure 2 This is a schematic diagram of the top metal plate structure of the present invention;
[0026] Figure 3 For the present invention Figure 2 A partial enlarged view of the middle part;
[0027] Figure 4 This is a schematic diagram of the structure of the HTTC dielectric plate of the present invention;
[0028] Figure 5 It is a schematic diagram of the structure of the intermediate metal plate located at the top of the present invention;
[0029] Figure 6 This is a schematic diagram of the bottom metal plate structure of the present invention;
[0030] Figure 7 It is a schematic diagram of the first connecting slot structure of the middle metal plate located at the top of the present invention;
[0031] Figure 8 This is a schematic diagram of the internal metallized via structure of the present invention;
[0032] Fig. 9 It is a schematic diagram of the cross-sectional structure of each intermediate metal plate and each HTTC dielectric plate of the present invention;
[0033] Fig.10 It is a simulation result diagram of S11 and S21 in W band of the present invention;
[0034] Among them, 1. standard W-band waveguide; 2. surface vacuum cavity; 3. top metal plate; 4. microstrip line; 5. on-board coupling plate; 6. HTTC dielectric plate; 7. external metallized via; 8. first connecting slot; 9. middle metal plate; 10. bottom coupling plate; 12. internal metallized via; 13. through slot; 14. bottom metal plate; 15. shielding plate; 16. top metal plate slot; 17. second connecting slot; 18. bottom metal plate slot; 19. coplanar waveguide. DETAILED DESCRIPTION
[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0036] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0037] Reference Figures 1 to 10 The present invention discloses an airtight waveguide-microstrip transition structure based on multi-layer HTCC, comprising: a top metal plate 3, on which two symmetrically arranged top metal plate slots 16 are provided, a second connecting slot 17 is provided between the two top metal plate slots 16, two ends of the second connecting slot 17 are respectively connected to the corresponding top metal plate slots 16, and a coplanar waveguide coupling portion is provided in the second connecting slot 17 and the two top metal plate slots 16;
[0038] A surface vacuum chamber 2 is fixedly connected to the top of the top metal plate 3, and the surface vacuum chamber 2 covers the second connecting groove 17 and the two top metal plate grooves 16;
[0039] The top of the dielectric transmission component is fixedly connected to the bottom of the top metal plate 3, and the bottom of the dielectric transmission component is respectively fixedly connected to two symmetrically arranged standard W-band waveguides 1;
[0040] A first shielding portion and a second shielding portion are provided below the second connecting groove 17 . The first shielding portion is located within the projection area of the second connecting groove 17 , and the second shielding portion is located outside the projection area of the second connecting groove 17 .
[0041] When in use, the standard W-band waveguide 1 is in contact with the dielectric transmission component, wherein one standard W-band waveguide 1 is used for microwave input, and the other standard W-band waveguide 1 is used for microwave output, which is transmitted by the dielectric transmission component, and energy coupling between the metal waveguide-coplanar waveguide coupling part and the coplanar waveguide coupling part-metal waveguide is realized through the coplanar waveguide coupling part. By arranging the coplanar waveguide coupling part in the surface vacuum cavity 2, the air in the dielectric transmission component is isolated from the coplanar waveguide coupling part, thereby avoiding oxidation of the subsequent circuit of the transition structure of the coplanar waveguide coupling part, extending the service life, and reducing the loss.
[0042] Further optimized solution, the coplanar waveguide coupling part includes a microstrip line 4, the microstrip line 4 is arranged in the second connecting slot 17, a gap is left between the edge of the microstrip line 4 and the inner wall of the second connecting slot 17, the two ends of the microstrip line 4 are respectively fixedly connected to one end of the coplanar waveguide 19, the other end of the coplanar waveguide 19 extends into the corresponding top metal plate slot 16, the end of the coplanar waveguide 19 away from the microstrip line 4 is fixedly connected to the on-board coupling plate 5, the on-board coupling plate 5 is coaxially arranged in the top metal plate slot 16, and a gap is left between the edge of the on-board coupling plate 5 and the inner wall of the top metal plate slot 16;
[0043] The top metal plate 3, the microstrip line 4, the coplanar waveguide 19 and the on-board coupling plate 5 are located in the same plane, and the microstrip line 4, the coplanar waveguide 19 and the on-board coupling plate 5 are fixedly connected to the top of the dielectric transmission component.
[0044] According to a further optimized solution, the dielectric transmission component includes a plurality of HTTC dielectric plates 6, an intermediate metal plate 9 is provided between two adjacent HTTC dielectric plates 6, the intermediate metal plate 9 is fixedly connected to the HTTC dielectric plate 6, the top of the HTTC dielectric plate 6 located on the top surface is fixedly connected to the bottom of the top metal plate 3, the bottom of the HTTC dielectric plate 6 located on the bottom surface is fixedly connected to a bottom coupling portion, and the tops of the two standard W-band waveguides 1 are fixedly connected to the bottom of the bottom coupling portion;
[0045] The microstrip line 4 and the on-board coupling plate 5 are fixedly connected to the top of the HTTC dielectric plate 6 located on the top.
[0046] A further optimized solution is provided, in which the bottom coupling portion comprises a bottom metal plate 14, the top of the bottom metal plate 14 is fixedly connected to the bottom of the HTTC dielectric plate 6 located at the bottom, two bottom metal plate slots 18 are symmetrically provided on the bottom metal plate 14, the two bottom metal plate slots 18 correspond one to one to two standard W-band waveguides 1, the top of the standard W-band waveguide 1 is fixedly connected to the bottom of the bottom metal plate 14, a bottom coupling plate 10 is provided in the middle of the inner side of the bottom metal plate slot 18, a shielding plate 15 is fixedly connected to the inner wall of the bottom metal plate slot 18, and the bottom coupling plate 10 is fixedly connected to the bottom of the HTTC dielectric plate 6 located at the bottom.
[0047] A further optimized solution is that the first shielding part includes a plurality of internal metallized vias 12, and the plurality of internal metallized vias 12 are distributed in a matrix within the projection area of the second connecting slot 17, and the internal metallized vias 12 penetrate a plurality of HTTC dielectric plates 6 and a plurality of intermediate metal plates 9 located below the first layer, and the top of the internal metallized via 12 contacts the bottom of the top metal plate 3, and the bottom of the internal metallized via 12 contacts the top of the bottom metal plate 14.
[0048] A further optimized solution is that the second shielding part includes a plurality of external metallized vias 7, the plurality of external metallized vias 7 are evenly distributed along the outer side of the projection area of the second connecting slot 17, the external metallized vias 7 penetrate a plurality of HTTC dielectric plates 6 and a plurality of intermediate metal plates 9, the top of the external metallized vias 7 is in contact with the bottom of the top metal plate 3, and the bottom of the external metallized vias 7 is in contact with the top of the bottom metal plate 14.
[0049] According to a further optimization scheme, two symmetrically arranged through slots 13 are provided on the middle metal plate 9 , and the through slots 13 are arranged corresponding to the top of the standard W-band waveguide 1 .
[0050] The present invention comprises a top metal plate 3, a bottom metal plate 14, a plurality of HTTC dielectric plates 6 and a plurality of intermediate metal plates 9 to form a transition structure, and an on-board coupling plate 5 and a bottom-board coupling plate 10 are respectively arranged on the upper and lower planes of the transition structure, wherein the on-board coupling plate 5 is used to access the microstrip structure, and the bottom-board coupling plate 10 is used to access the rear end of the standard W-band waveguide 1.
[0051] A preferred example provided in a specific embodiment of the present invention is applied to an on-chip integrated waveguide-microstrip transition structure in the W band, including a bottom coupling plate 10, an on-board coupling plate 5, a coplanar waveguide 19, a microstrip line 4, another coplanar waveguide 19, another on-board coupling plate 5 and another bottom coupling plate 10 connected in sequence from one end to the other end.
[0052] The plurality of internal metallized vias 12 and the plurality of external metallized vias 7 form an electromagnetic shielding area.
[0053] The microstrip transition structure is affected by the top-layer coupling matching structure and adopts a microstrip structure with a larger width. Therefore, the electromagnetic radiation in the W band cannot be ignored. An internal metallized via 12 is added near the microstrip line 4 to reduce the electromagnetic energy radiation of the microstrip line 4. At the same time, the internal metallized via 12 does not penetrate the top metal plate 3 to ensure the sealing of the surface vacuum cavity 2.
[0054] Among them, for the convenience of testing, this embodiment is a symmetrical structure. From the surface layer, a single transition structure consists of a bottom coupling plate 10, an on-board coupling plate 5, a plurality of HTTC dielectric plates 6 between the bottom coupling plate 10 and the on-board coupling plate 5, an intermediate metal plate 9 between two HTTC dielectric plates 6, a plurality of internal metallized vias 12 arranged within the range of the surface vacuum cavity 2, a plurality of external metallized vias 7 arranged outside the range of the surface vacuum cavity 2, a coplanar waveguide 19 and a microstrip line 4.
[0055] The back-to-back structure is obtained by mirroring the above-mentioned single transition structure, and together they realize the waveguide-microstrip transition structure of the back-to-back structure.
[0056] In addition, the standard W-band waveguide 1 does not extend into a plurality of HTTC dielectric plates 6, but is pre-placed on the lower surface of the HTTC dielectric plate 6 located at the bottom, and a suitable closed surface is cut through the conductor surface to form a semi-closed field with the waveguide wall itself, thereby preventing electromagnetic energy from leaking from the interface. The setting of the shielding sheet 15 can also better concentrate the electromagnetic energy.
[0057] The geometric center of the bottom coupling plate 10 is located at the center of the cross section of the standard W-band waveguide 1, and is directly coupled with the electromagnetic energy in the standard W-band waveguide 1 through the air; the geometric center of the on-board coupling plate 5 is also located at the center of the cross section of the standard W-band waveguide 1, and the electromagnetic energy in the standard W-band waveguide 1 and the electromagnetic energy of the bottom coupling plate 10 are coupled to the on-board coupling plate 5 through a number of HTTC dielectric plates 6. By adjusting the spacing between the top metal plate 3 and the on-board coupling plate 5, it is possible to prevent the electromagnetic energy from leaking from the top gap of the HTTC dielectric plate 6 as much as possible, and the length and width of the bottom coupling plate 10 and the on-board coupling plate 5 can be adjusted to adjust the energy coupling efficiency. Since the back-to-back structure is a mirror-symmetrical structure, the symmetrical part structure is not repeated.
[0058] According to a further optimization scheme, at least one of the plurality of intermediate metal plates 9 located at the top is provided with a first connecting groove 8, the first connecting groove 8 is located between the two corresponding through grooves 13, the first connecting groove 8 is located directly below the second connecting groove 17, and the ends of the first connecting groove 8 are respectively connected with the corresponding through grooves 13;
[0059] The internal metallized vias 12 penetrate through the plurality of HTTC dielectric plates 6 and the plurality of intermediate metal plates 9 located below the first intermediate metal plate 9 without the first connecting slot 8 .
[0060] A first connecting slot 8 is provided in the middle of the intermediate metal plate 9 at the top. The first connecting slot 8 is provided to minimize the microwave loss from the coplanar waveguide 19 to the microstrip line 4. Fig.10 The middle curve S(2,1) achieves the minimum transition line loss by adjusting the slot width around the microstrip line 4, which can be obtained through simulation scanning.
[0061] like Fig.10 As shown, it is a simulation result diagram of S11 and S21 when a preferred embodiment of the present invention is applied to the W band, from which it can be known that:
[0062] The standard W-band waveguide 1, the coplanar waveguide 19 and the microstrip line 4 determine the center frequency of the electromagnetic energy. By adjusting the appropriate line width w of the microstrip line 4 and the spacing between the center guide strip of the coplanar waveguide 19 and the grounding layer of the coplanar waveguide 19, as well as the side lengths of the coupling plate 5 on the board and the coupling plate 10 at the bottom of the board, and the spacing between the coupling plate 5 on the board and the metal surface, the electromagnetic energy coupling between the W-band standard waveguide and the microstrip line 4 with a wider actual bandwidth can be achieved in the W band. Finally, through optimization and reference to the HTCC process, the line width w of the microstrip line 4 is 0.1 mm, the spacing between the center guide strip of the coplanar waveguide 19 (i.e., the edge of the microstrip line 4) and the grounding layer of the coplanar waveguide 19 (i.e., the edge of the connection between the top metal plate slot 16 and the second connecting slot 17) is 0.097 mm, and the board The coupling plate 5 is 0.62 mm long and 0.48 mm wide, the coupling plate 10 at the bottom of the board is 1.16 mm long and 0.15 mm wide, the spacing m between the coupling plate 5 on the board and the top metal plate 3 is 0.12 mm, the external metallized via 7 and the internal metallized via 12 are conical with a front diameter of 70 um and a back diameter of 62 um, the total thickness of the transition structure (including the top metal plate 3, the bottom metal plate 14, several HTTC dielectric plates 6 and several intermediate metal plates 9) is 0.49 mm, wherein the thickness of the top metal plate 3, the bottom metal plate 14 and the intermediate metal plate 9 are all 0.01 mm, the top metal plate 3, the bottom metal plate 14 and the several intermediate metal plates 9 are nine in total, and the thickness of the single-layer HTTC dielectric plate 6 is 0.05 mm.
[0063] According to the above analysis and optimization data, the simulation results are obtained: in the frequency range of 90.57-96.25GHz, the echo is better than 15dB and the insertion loss is better than 5dB, while the commonly used one-way transition only considers the one-side transition and does not need to consider the back-to-back structure, that is, the loss and echo of the actual one-side structure will be further optimized. It shows that the present invention can be applied to the field of W-band microwave chip packaging, and has the performance of low loss, low echo, simple structure and convenient processing.
[0064] Beneficial effects of the present invention:
[0065] 1. The waveguide-microstrip coupling transition structure is adopted to realize the transition from microstrip line 4 to standard microwave waveguide, which can be applied to the field of microwave chip packaging and has the advantages of low loss, wide frequency band, high transition efficiency, simple structure and convenient processing;
[0066] 2. Using HTCC itself as the medium to isolate the air in the vacuum cavity and waveguide solves the key problems of low air tightness and short service life of the traditional short-circuit structure;
[0067] 3. The new HTCC coupling structure is adopted, which utilizes the coupling between parallel surfaces and the shielding of metallized vias and conductor planes to efficiently transfer the electromagnetic energy in the waveguide to the subsequent microstrip circuit, solving the problem of large three-dimensional volume in traditional short-circuit surface structures and providing a reference for achieving small volume and high density in the field of microwave chip packaging.
[0068] In the description of the present invention, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0069] The embodiments described above are only descriptions of the preferred modes of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should all fall within the protection scope determined by the claims of the present invention.
Claims
1. An airtight waveguide-microstrip transition structure based on multi-layer HTCC, characterized in that: include: A top metal plate (3), wherein the top metal plate (3) is provided with two symmetrically arranged top metal plate slots (16), a second connecting slot (17) is provided between the two top metal plate slots (16), two ends of the second connecting slot (17) are respectively connected to the corresponding top metal plate slots (16), and a coplanar waveguide coupling portion is provided in the second connecting slot (17) and the two top metal plate slots (16); A surface vacuum cavity (2) is fixedly connected to the top of the top metal plate (3), and the surface vacuum cavity (2) covers the second connecting groove (17) and the two top metal plate grooves (16); The top end of the dielectric transmission component is fixedly connected to the bottom of the top metal plate (3), and the bottom end of the dielectric transmission component is respectively fixedly connected to two symmetrically arranged standard W-band waveguides (1); A first shielding portion and a second shielding portion are provided below the second connecting groove (17), the first shielding portion being located within a projection area of the second connecting groove (17), and the second shielding portion being located outside the projection area of the second connecting groove (17); The coplanar waveguide coupling portion comprises a microstrip line (4), the microstrip line (4) is arranged in the second connecting slot (17), a gap is left between the edge of the microstrip line (4) and the inner wall of the second connecting slot (17), the two ends of the microstrip line (4) are respectively fixedly connected to one end of the coplanar waveguide (19), the other end of the coplanar waveguide (19) extends into the corresponding top metal plate slot (16), the end of the coplanar waveguide (19) away from the microstrip line (4) is fixedly connected to an on-board coupling plate (5), the on-board coupling plate (5) is coaxially arranged in the top metal plate slot (16), and a gap is left between the edge of the on-board coupling plate (5) and the inner wall of the top metal plate slot (16); The top metal plate (3), the microstrip line (4), the coplanar waveguide (19) and the on-board coupling plate (5) are located in the same plane, and the microstrip line (4), the coplanar waveguide (19) and the on-board coupling plate (5) are fixedly connected to the top of the dielectric transmission component; The dielectric transmission component comprises a plurality of HTTC dielectric plates (6), an intermediate metal plate (9) is provided between two adjacent HTTC dielectric plates (6), the intermediate metal plate (9) is fixedly connected to the HTTC dielectric plate (6), the top of the HTTC dielectric plate (6) located on the top surface is fixedly connected to the bottom of the top metal plate (3), the bottom of the HTTC dielectric plate (6) located on the bottom surface is fixedly connected to a bottom coupling portion, and the tops of the two standard W-band waveguides (1) are fixedly connected to the bottom of the bottom coupling portion; The microstrip line (4) and the on-board coupling plate (5) are fixedly connected to the top of the HTTC dielectric plate (6) located at the top; The bottom coupling portion comprises a bottom metal plate (14), the top of the bottom metal plate (14) is fixedly connected to the bottom of the HTTC dielectric plate (6) located at the bottom, two bottom metal plate slots (18) are symmetrically provided on the bottom metal plate (14), the two bottom metal plate slots (18) correspond to the two standard W-band waveguides (1) one by one, the top of the standard W-band waveguide (1) is fixedly connected to the bottom of the bottom metal plate (14), a bottom coupling plate (10) is provided at the middle of the inner side of the bottom metal plate slot (18), a shielding plate (15) is fixedly connected to the inner wall of the bottom metal plate slot (18), and the bottom coupling plate (10) is fixedly connected to the bottom of the HTTC dielectric plate (6) located at the bottom; The first shielding portion comprises a plurality of internal metallized vias (12), the plurality of internal metallized vias (12) being distributed in a matrix within the projection area of the second connecting slot (17), the internal metallized vias (12) penetrating the plurality of HTTC dielectric plates (6) and the plurality of intermediate metal plates (9) located below the first layer, the top of the internal metallized vias (12) being in contact with the bottom of the top metal plate (3), and the bottom of the internal metallized vias (12) being in contact with the top of the bottom metal plate (14); The second shielding portion comprises a plurality of external metallized vias (7), the plurality of external metallized vias (7) being evenly distributed along the outer side of the projection area of the second connecting slot (17), the external metallized vias (7) penetrating the plurality of HTTC dielectric plates (6) and the plurality of intermediate metal plates (9), the top of the external metallized vias (7) being in contact with the bottom of the top metal plate (3), and the bottom of the external metallized vias (7) being in contact with the top of the bottom metal plate (14); The middle metal plate (9) is provided with two symmetrically arranged through slots (13); At least one of the plurality of intermediate metal plates (9) located at the top is provided with a first connecting groove (8), the first connecting groove (8) being located between two corresponding through grooves (13), the first connecting groove (8) being located directly below the second connecting groove (17), and the ends of the first connecting groove (8) being respectively connected to the corresponding through grooves (13); The internal metallized vias (12) penetrate through a plurality of the HTTC dielectric plates (6) and a plurality of the intermediate metal plates (9) located below the first intermediate metal plate (9) that is not provided with the first connecting slot (8).
2. The airtight waveguide-microstrip transition structure based on multi-layer HTCC according to claim 1, characterized in that: The through slot (13) is arranged corresponding to the top of the standard W-band waveguide (1).