Alsic composite material and method for producing the same

Abstract

The application relates to the technical field of metal matrix composites, and provides an AlSiC composite material and a preparation method thereof. The preparation method of the AlSiC composite material comprises the following steps: providing a silicon carbide substrate, the surface of the silicon carbide substrate is a silicon layer; removing part of silicon atoms of the silicon layer to form a plurality of grooves; filling carbon material into the grooves to form a pretreated silicon carbide substrate; dropping aluminum liquid droplets on the pretreated silicon carbide substrate and performing dynamic stretching treatment to form the AlSiC composite material. The preparation method of the AlSiC composite material provided by the application can weaken the distance edge length cooperation between Si atoms and C atoms in the silicon carbide substrate, enhance the binding force between aluminum atoms and Si atoms and C atoms in the diffusion process, thus accelerating the diffusion speed of the aluminum liquid, and further improving the wettability between the silicon carbide substrate and the aluminum liquid.

Description

Technical Field

[0001] This application belongs to the field of metal matrix composite technology, and particularly relates to an AlSiC composite material and its preparation method. Background Technology

[0002] AlSiC (aluminum-based silicon carbide) is an aluminum-based silicon carbide particle-reinforced composite material that combines the advantages of silicon carbide ceramics and metallic aluminum. It boasts high thermal conductivity, a coefficient of thermal expansion matching the chip, low density, light weight, high hardness, and high flexural strength, making it the preferred material for thermal management in microelectronics, power devices, and optoelectronic device packaging. It is widely used in important fields such as aerospace, high-speed rail, and microwaves. However, the poor wettability between SiC particles and molten aluminum makes it difficult to achieve uniform distribution of molten aluminum within the SiC particles during AlSiC composite material preparation, thus affecting the performance of the AlSiC composite material.

[0003] Therefore, it is necessary to develop a new method for preparing AlSiC composite materials to improve the wettability between SiC substrates and molten aluminum. Summary of the Invention

[0004] The purpose of this application is to provide an AlSiC composite material and its preparation method, which aims to solve the problem that existing AlSiC composite material preparation methods have poor wettability between SiC particles and molten aluminum, resulting in the molten aluminum not being uniformly distributed in the SiC substrate.

[0005] To achieve the above-mentioned objectives, the technical solution adopted in this application is as follows:

[0006] In a first aspect, this application provides a method for preparing AlSiC composite materials, comprising the following steps:

[0007] A silicon carbide substrate is provided, wherein the surface of the silicon carbide substrate is a silicon layer;

[0008] Some silicon atoms are removed from the silicon layer to form several grooves;

[0009] Carbon material is filled into the groove to form a pretreated silicon carbide substrate;

[0010] Aluminum liquid droplets are attached to the pretreated silicon carbide substrate and subjected to dynamic stretching to form an AlSiC composite material.

[0011] In this embodiment, the dynamic stretching process includes: at a deformation rate of 0.9 × 10⁻⁶. -5 nm / fs~1.1×10 -5 nm / fs, stretching the silicon carbide substrate along the x-axis.

[0012] In this embodiment, the time step for the dynamic stretching process is 0.5–1.5 fs, and the number of simulations is 10. 5 .

[0013] In one embodiment, the step of removing some silicon atoms from the silicon layer includes: using a pulsed laser to perform laser scanning on the surface of the silicon carbide substrate to remove some silicon atoms from the silicon layer.

[0014] In this embodiment, the wavelength of the laser scanning process is 800–1500 nm, the average power is 5 W / 100 kHz–8 W / 100 kHz, the pulse width is 0.35–20 ps, ​​and the pulse energy is 0.05–0.1 mJ.

[0015] In this embodiment, the volume of the aluminum droplet is 10–12 nm. 3 .

[0016] In the embodiments, the carbon material is selected from at least one of graphite, graphene, and carbon nanomaterials.

[0017] In this embodiment, the spacing between adjacent grooves is 0.15 to 10 nm.

[0018] In this embodiment, the depth of the groove is 2–3 nm;

[0019] In this embodiment, the groove is rectangular, with a length of 87–89 nm and a width of 4–6 nm.

[0020] Secondly, this application provides an AlSiC composite material, including an AlSiC composite material prepared by the method provided in this application.

[0021] In the embodiments, the wetting angle of the AlSiC composite material is <90°C.

[0022] Compared with the prior art, this application has the following beneficial effects:

[0023] The method for preparing AlSiC composite material provided in the first aspect of this application involves, on the one hand, removing some carbon atoms from the silicon layer on the surface of a silicon carbide substrate to form several grooves, and filling the grooves with carbon material to form a pretreated silicon carbide substrate with carbon material inlay. Since the activity of carbon atoms is greater than that of silicon atoms, the probability of bonding between carbon atoms and aluminum atoms is higher than that between carbon atoms and silicon atoms. Therefore, after aluminum liquid is dropped onto the pretreated silicon carbide substrate, the carbon material inlaid on the silicon carbide surface can accelerate the migration rate of aluminum atoms, thereby dispersing the distribution of aluminum liquid to a certain extent and improving the wettability between the silicon carbide substrate and the aluminum liquid. On the other hand, by performing dynamic stretching treatment on the pretreated silicon carbide substrate with dropped aluminum liquid, the distance-side length bonding effect between Si atoms and C atoms in the silicon carbide substrate can be weakened, and the bonding force between aluminum atoms and Si atoms and C atoms during diffusion can be enhanced. Therefore, the diffusion rate of aluminum liquid can be accelerated, thereby further improving the wettability between the silicon carbide substrate and the aluminum liquid.

[0024] The AlSiC composite material provided in the second aspect of this application has advantages such as high thermal conductivity, low coefficient of thermal expansion, low density, and high strength because the Al is uniformly distributed in the SiC substrate, and the Al is prepared by the method of preparing AlSiC composite material provided in this application. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 These are curves showing the wetting angle of the AlSiC composite materials provided in the embodiments of this application and comparative examples 1 to 5 as a function of deformation.

[0027] Figure 2 These are curves showing the self-diffusion coefficient of the AlSiC composite materials provided in the embodiments of this application and comparative examples 1 to 5 as a function of deformation.

[0028] Figure 3 These are curves showing the interaction energy of the AlSiC composite materials provided in the embodiments and comparative examples 1-5 of this application as a function of deformation. Detailed Implementation

[0029] To make the technical problems, technical solutions, and beneficial effects of this application clearer, the following detailed description is provided in conjunction with embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0030] In this application, the term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0031] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0032] It should be understood that in the various embodiments of this application, the order of the above processes does not imply the order of execution. Some or all steps may be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0033] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0034] The weights of the relevant components mentioned in the embodiments of this application can refer not only to the specific content of each component, but also to the proportional relationship between the weights of the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application. Specifically, the mass described in the embodiments of this application can be a mass unit known in the chemical industry, such as μg, mg, g, or kg.

[0035] The terms "first" and "second" are used for descriptive purposes only, to distinguish objects, such as substances, from one another, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. For example, without departing from the scope of the embodiments of this application, "first XX" may also be referred to as "second XX," and similarly, "second XX" may also be referred to as "first XX." Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of that feature.

[0036] The first aspect of this application provides a method for preparing AlSiC composite materials, comprising the following steps:

[0037] S01: Provides a silicon carbide substrate, the surface of which is a silicon layer;

[0038] S02: Some silicon atoms are removed from the silicon layer to form several grooves;

[0039] S03: Fill the grooves with carbon material to form a pretreated silicon carbide substrate;

[0040] S04: Aluminum liquid droplets are attached to a pretreated silicon carbide substrate and subjected to dynamic stretching treatment to form an AlSiC composite material.

[0041] The AlSiC composite material preparation method provided in this application involves, on the one hand, removing some carbon atoms from the silicon layer on the surface of a silicon carbide substrate to form several grooves, and filling the grooves with carbon material to form a pretreated silicon carbide substrate with carbon material inlay. Since the activity of carbon atoms is greater than that of silicon atoms, the probability of bonding between carbon atoms and aluminum atoms is higher than that between carbon atoms and silicon atoms. Therefore, after aluminum liquid is dropped onto the pretreated silicon carbide substrate, the carbon material embedded on the silicon carbide surface can accelerate the migration rate of aluminum atoms, thereby dispersing the distribution of aluminum liquid to a certain extent and improving the wettability between the silicon carbide substrate and the aluminum liquid. On the other hand, by performing dynamic stretching treatment on the pretreated silicon carbide substrate with dropped aluminum liquid, the distance-side length bonding effect between Si atoms and C atoms in the silicon carbide substrate can be weakened, and the bonding force between aluminum atoms and Si atoms and C atoms during diffusion can be enhanced. Therefore, the diffusion rate of aluminum liquid can be accelerated, thereby further improving the wettability between the silicon carbide substrate and the aluminum liquid.

[0042] In step S01 above, this application uses a silicon carbide substrate with a silicon layer on its surface as a carrier for preparing AlSiC composite materials.

[0043] In step S02 above, the step of removing some silicon atoms from the silicon layer includes: using a pulsed laser to perform laser scanning on the surface of the silicon carbide substrate to remove some silicon atoms from the silicon layer. The laser can be a femtosecond laser or a picosecond laser.

[0044] In this embodiment, the wavelength of the laser scanning process is 800–1500 nm, the average power is 5 W / 100 kHz–8 W / 100 kHz, the pulse width is 0.35–20 ps, ​​and the pulse energy is 0.05–0.1 mJ. In actual operation, the laser scanning parameters of the pulsed laser can be adjusted as needed.

[0045] In this embodiment, the spacing between adjacent grooves is 0.15–10 nm. For example, 0.15 nm, 1 nm, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, etc. This groove spacing range ensures that the carbon material embedded in the groove is not interfered with by the bonding forces of other grooves, which is beneficial for improving the wetting effect between the silicon carbide substrate and the molten aluminum.

[0046] In this embodiment, the groove depth is 2–3 nm, such as 2 nm, 2.18975 nm, or 3 nm. The groove depth can be adjusted by regulating the pulse energy of the laser. This groove depth is beneficial for improving the wettability between the silicon carbide substrate and the molten aluminum, resulting in the best wetting effect between the silicon carbide substrate and the molten aluminum.

[0047] In this embodiment, the groove is rectangular, with a length of 87–89 nm (e.g., 87 nm, 87.5912 nm, 88 nm, 89 nm, etc.) and a width of 4–6 nm (e.g., 4 nm, 4.3795 nm, 5 nm, 6 nm, etc.). The length and width of this groove are obtained by expanding the cell according to the lattice constant, which is beneficial for improving the wettability between the silicon carbide substrate and the molten aluminum, resulting in the best wetting effect. Rounding the value down might remove some atoms, affecting the forces between atomic bonds and thus impairing the performance of the AlSiC composite material to some extent.

[0048] In step S03 above, the carbon material can be filled into the groove by mechanical force, and the magnitude of the mechanical force should be such that it does not damage the Si-C bonds on the surface of the silicon carbide substrate.

[0049] In the embodiments, the carbon material is selected from at least one of graphite, graphene, and carbon nanomaterials.

[0050] In step S04 above, the dynamic stretching process includes: at a deformation rate of 0.9 × 10⁻⁶. -5 nm / fs~1.1×10 - 5 nm / fs, stretching the silicon carbide substrate along the x-axis, that is, stretching 10 nm / fs per 100 steps. -3 The deformation rate is stretched along the x-axis of the silicon carbide substrate, causing the silicon carbide substrate to be stretched at 10... 5 The deformation along the x-axis is 1 nm within the calculation period of fs. The deformation rate range of this embodiment can better simulate the micro-deformation vibration state of the silicon carbide substrate, weaken the distance-side bond between Si and C atoms in the silicon carbide substrate, enhance the bonding force between aluminum atoms and Si and C atoms during diffusion, accelerate the diffusion rate of aluminum liquid, thereby improving the wettability between the silicon carbide substrate and aluminum liquid; it can also prevent atoms from squeezing or displacing each other during substrate stretching.

[0051] In this embodiment, the time step for the dynamic stretching process is 0.5–1.5 fs, such as 0.5 fs, 1 fs, 1.5 fs, etc., and the number of simulations is 10. 5 The time step and simulation number range of this embodiment can better simulate the micro-deformation vibration state of the silicon carbide substrate, weaken the distance-side bond between Si and C atoms in the silicon carbide substrate, enhance the bonding force between aluminum atoms and Si and C atoms during diffusion, accelerate the diffusion rate of aluminum liquid, thereby improving the wettability between the silicon carbide substrate and aluminum liquid; it can also prevent atoms from squeezing or displacing each other during substrate stretching.

[0052] In this embodiment, the aluminum droplets can be formed by melting solid aluminum at high temperature into liquid aluminum and then re-forming the liquid aluminum droplets. The volume of the aluminum droplets is 10–12 nm. 3 For example, 10nm 3 11nm 3 12nm 3 wait.

[0053] Secondly, this application provides an AlSiC composite material, including an AlSiC composite material prepared by the method provided in this application.

[0054] The AlSiC composite material provided in the second aspect of this application has advantages such as high thermal conductivity, low coefficient of thermal expansion, low density, and high strength because the Al is uniformly distributed in the SiC substrate, and the Al is prepared by the method of preparing AlSiC composite material provided in this application.

[0055] In the embodiments, the wetting angle of the AlSiC composite material is <90°C.

[0056] The following description is based on specific embodiments.

[0057] Example 1

[0058] This embodiment provides a method for preparing AlSiC composite material, including the following steps:

[0059] S11: Provides a silicon carbide substrate with a silicon layer on the surface (size 87.59×87.59×6.57nm). 3 );

[0060] S12: A pulsed laser (wavelength 1000nm, average power 6W / 100kHz, pulse width 10ps, pulse energy 0.1mJ) is used to perform laser scanning on the surface of a silicon carbide substrate to remove some silicon atoms from the silicon layer, forming multiple rectangular grooves with a spacing of 5nm; wherein, the depth of the rectangular grooves is 2.18975nm, the length is 87.5912nm, and the width is 4.3795nm;

[0061] S13: Add graphene to the rectangular groove to form a pretreated silicon carbide substrate with graphene embedded on the surface.

[0062] S14: A volume of 10.95nm 3 Liquid aluminum droplets are attached to a pretreated silicon carbide substrate and deformed at a time step of 1 fs and a deformation rate of 10. -5 nm stretches the silicon carbide substrate along the x-axis, so that the substrate is at 10 5 The AlSiC composite material is obtained by deforming along the x-axis by 1 nm within the calculation period of fs.

[0063] Comparative Example 1

[0064] This comparative example provides a method for preparing AlSiC composite material, including the following steps:

[0065] S1: Provides a silicon carbide substrate with a silicon layer on the surface (size 87.59×87.59×6.57nm). 3 );

[0066] S2: A volume of 10.95nm 3 Aluminum droplets are attached to a silicon carbide substrate to obtain an AlSiC composite material.

[0067] Comparative Example 2

[0068] This comparative example provides a method for preparing AlSiC composite material, including the following steps:

[0069] S1: Provides a silicon carbide substrate with a silicon layer on the surface (size 87.59×87.59×6.57nm). 3 );

[0070] S2: A volume of 10.95nm 3 Liquid aluminum droplets adhere to a silicon carbide substrate and deform at a time step of 1 fs and a deformation rate of 10. -5 nm stretches the silicon carbide substrate along the x-axis, so that the substrate is at 10 5 The AlSiC composite material is obtained by deforming along the x-axis by 1 nm within the calculation period of fs.

[0071] Comparative Example 3

[0072] This comparative example provides a method for preparing AlSiC composite material, including the following steps:

[0073] S1: Provides a silicon carbide substrate with a silicon layer on the surface (size 87.59×87.59×6.57nm). 3 );

[0074] S2: A pulsed laser (wavelength 1000nm, average power 6W / 100kHz, pulse width 10ps, pulse energy 0.1mJ) is used to perform laser scanning on the surface of a silicon carbide substrate to remove some silicon atoms from the silicon layer, forming multiple rectangular grooves with a spacing of 5nm; wherein, the depth of the rectangular grooves is 2.18975nm, the length is 87.5912nm, and the width is 4.3795nm;

[0075] S3: A volume of 10.95nm 3 Aluminum liquid droplets are attached to a silicon carbide substrate with multiple rectangular grooves on its surface to obtain an AlSiC composite material.

[0076] Comparative Example 4

[0077] This comparative example provides a method for preparing AlSiC composite material, including the following steps:

[0078] S1: Provides a silicon carbide substrate with a silicon layer on the surface (size 87.59×87.59×6.57nm). 3 );

[0079] S2: A pulsed laser (wavelength 1000nm, average power 6W / 100kHz, pulse width 10ps, pulse energy 0.1mJ) is used to perform laser scanning on the surface of a silicon carbide substrate to remove some silicon atoms from the silicon layer, forming multiple rectangular grooves with a spacing of 5nm; wherein, the depth of the rectangular grooves is 2.18975nm, the length is 87.5912nm, and the width is 4.3795nm;

[0080] S3: Add graphene to the rectangular groove to form a pretreated silicon carbide substrate with graphene embedded on the surface.

[0081] S4: A volume of 10.95nm 3 Aluminum liquid droplets are attached to a pretreated silicon carbide substrate to obtain an AlSiC composite material.

[0082] Comparative Example 5

[0083] S1: Provides a silicon carbide substrate with a silicon layer on the surface (size 87.59×87.59×6.57nm). 3 );

[0084] S2: A pulsed laser (wavelength 1000nm, average power 6W / 100kHz, pulse width 10ps, pulse energy 0.1mJ) is used to perform laser scanning on the surface of a silicon carbide substrate to remove some silicon atoms from the silicon layer, forming multiple rectangular grooves with a spacing of 5nm; wherein, the depth of the rectangular grooves is 2.18975nm, the length is 87.5912nm, and the width is 4.3795nm;

[0085] S3: A volume of 10.95nm 3 Liquid aluminum droplets adhere to a silicon carbide substrate with multiple rectangular grooves on its surface, and are distributed at a time step of 1 fs and a deformation rate of 10. -5 nm stretches the silicon carbide substrate along the x-axis, so that the substrate is at 10 5 The AlSiC composite material is obtained by deforming along the x-axis by 1 nm within the calculation period of fs.

[0086] The AlSiC composite materials prepared in Example 1 and Comparative Examples 1-5 were tested for wetting angle, self-diffusion coefficient, and interaction energy. The test results are shown in Tables 1-3. Figures 1-3 As shown.

[0087] Table 1 (Wetting Angle °)

[0088] Deformation amount (nm) Example 1 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 0 73.75 145 135 151.25 125 132.5 0.05 73.75 136.25 82.5 151.25 107.5 127.5 0.1 80 131.25 98.75 133.75 116.25 120 0.15 77.5 102.5 103.75 127.5 126.25 122.5 0.2 80 93.75 98.75 142.5 101.25 105 0.25 77.5 128.75 108.75 125 113.75 130 0.3 83.75 107.5 81.25 138.75 121.25 105 0.35 81.25 108.75 77.5 145.5 110 117.5 0.4 70 115 85 157.5 111.25 111.25 0.45 77.5 107.5 87.5 141.25 132.5 112.5 0.5 62.5 117.5 90 158.75 100 116.25 0.55 67.5 115 71.25 162.5 82.5 132.5 0.6 80 122.5 72.5 158.75 107.5 115 0.65 75 98 76.25 108.75 116 105 0.7 77.5 101.25 80 151.25 105 122.5 0.75 82.5 125 72.5 161.25 103.75 127.5 0.8 77.5 92.5 91.25 140 120 110 0.85 87.5 127.5 75 132.5 115 103.75 0.9 88.75 123.75 83.75 130 120 102.5 0.95 79 145 87.5 143.75 112.5 120 1 85 112.5 81.75 138.75 112.5 111.25

[0089] Table 2 (Self-diffusion coefficient nm) 2 )

[0090] Deformation amount (nm) Example 1 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 0 0.00E+00 0 2.01948E-30 0 0 5.04871E-31 0.05 0.4537376 0.065395154 0.091269315 0.079432718 0.10378093 0.36988881 0.1 1.8953979 0.11007003 0.17138142 0.15047308 0.16610454 1.2216743 0.15 4.8987279 0.16070364 0.17188928 0.18626296 0.2577342 2.6061791 0.2 9.474571 0.24658523 0.20806504 0.20729515 0.25707266 2.9948051 0.25 16.773162 0.28926417 0.27771523 0.25181706 0.27961228 3.1885634 0.3 27.828387 0.36710389 0.30956756 0.28344799 0.29406188 3.3620061 0.35 40.73553 0.39864995 0.40531689 0.34943752 0.31445937 3.8756621 0.4 48.77613 0.38859966 0.48545746 0.41013853 0.31442258 4.9113674 0.45 53.61321 0.49394097 0.5681712 0.38497115 0.35405596 4.934877 0.5 54.231032 0.54904728 0.59678704 0.41043041 0.3921266 5.5158014 0.55 55.364243 0.57970743 0.56798627 0.38787473 0.42032946 6.3660319 0.6 54.927463 0.65431208 0.6291681 0.41497738 0.48329744 6.9909285 0.65 55.103026 0.71767356 0.6888812 0.3576796 0.5645133 6.9526419 0.7 55.818784 0.91431036 0.71210837 0.43596337 0.63746933 7.0239163 0.75 55.492891 1.2403583 0.75761496 0.42228186 0.78324308 7.1520928 0.8 55.437627 1.5902685 0.73773075 0.42660474 0.886883 7.1989682 0.85 55.229077 2.0901924 0.75538601 0.48499903 0.90565825 7.2444057 0.9 55.080514 2.5424528 0.73622748 0.46081965 0.92677162 7.3278316 0.95 54.979924 3.1624215 0.68998676 0.50398681 1.0544165 7.3964046 1 54.742383 3.8663162 0.64995528 0.46074675 1.1424263 7.4466541

[0091] Table 3 (Interaction energy kJ / mol)

[0092] Deformation amount (nm) Example 1 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 0 -26.33323 -6.0116258 -13.031204 -3.2487505 -9.3165323 -5.1683505 0.05 -24.310561 -10.093007 -10.927772 -4.5627492 -13.570552 -4.7181648 0.1 -23.944265 -10.61212 -13.468553 -5.5089373 -14.042789 -7.155174 0.15 -23.39325 -11.585012 -10.967928 -7.7104815 -15.098424 -7.5896109 0.2 -24.809442 -12.14683 -10.479363 -5.7802916 -16.572632 -8.6030226 0.25 -24.098956 -10.698835 -12.763423 -7.1035397 -17.24396 -8.1138503 0.3 -23.459015 -8.1613423 -10.87688 -6.3253974 -15.883445 -9.1563679 0.35 -21.245759 -9.4990566 -10.938716 -5.9517832 -16.517439 -7.4930406 0.4 -24.037293 -10.521819 -10.704366 -3.8413161 -15.093352 -9.3655402 0.45 -26.120102 -9.9310969 -12.05126 -3.81693 -17.801655 -9.2494061 0.5 -26.954175 -11.583797 -12.037647 -3.5118352 -17.34695 -9.2811589 0.55 -26.307749 -11.580604 -10.764068 -3.804209 -18.359741 -10.063986 0.6 -25.637188 -10.306229 -11.248985 -4.4449303 -16.718714 -9.6959873 0.65 -26.241515 -9.2741836 -10.734427 -4.8962663 -15.304441 -10.500792 0.7 -25.411737 -12.304701 -9.0698784 -6.1109553 -14.699951 -9.8977768 0.75 -24.155417 -12.692801 -11.060586 -5.1128623 -18.991325 -10.340979 0.8 -25.44217 -10.915286 -11.271365 -5.7270689 -16.710181 -10.635901 0.85 -24.644546 -12.424539 -12.254643 -5.353572 -14.620908 -11.402155 0.9 -26.084732 -11.139849 -10.264836 -6.15264 -16.468493 -11.179202 0.95 -26.101715 -11.122549 -11.185485 -5.0489406 -18.685951 -11.970825 1 -26.273379 -11.01369 -9.2882184 -5.705293 -15.269712 -11.612178

[0093] From Table 1 and Figure 1 It can be seen that the wetting angle of the AlSiC composite material prepared in Example 1 of this application is significantly smaller than that of the AlSiC composite materials prepared in Comparative Examples 2 and 5. This indicates that by removing some carbon atoms from the silicon layer on the surface of the silicon carbide substrate to form several grooves, the carbon material filled in the grooves can accelerate the migration rate of aluminum atoms, disperse the distribution of molten aluminum to a certain extent, and improve the wettability between the silicon carbide substrate and the molten aluminum. The wetting angle of the AlSiC composite material prepared in Example 1 of this application is significantly smaller than that of the AlSiC composite materials prepared in Comparative Examples 1, 3, and 4. This indicates that by performing dynamic stretching treatment on the pretreated silicon carbide substrate with added molten aluminum, the distance-side length bonding effect between Si atoms and C atoms in the silicon carbide substrate can be weakened, and the bonding force between aluminum atoms and Si atoms and C atoms during diffusion can be enhanced. Therefore, the diffusion rate of molten aluminum is accelerated, thereby further improving the wettability between the silicon carbide substrate and the molten aluminum. Furthermore, compared with the wetting angles of the AlSiC composite materials prepared in Comparative Examples 1 to 5, the wetting angle of the AlSiC composite material prepared in Example 1 of this application fluctuates less during dynamic tensile treatment, and the wetting angles are all below 90°, indicating that the aluminum liquid completely wets the surface of the silicon carbide substrate, and the wettability between the silicon carbide substrate and the aluminum liquid is good.

[0094] From Table 2 and Figure 2 It can be seen that the self-diffusion coefficient of the AlSiC composite material prepared in Example 1 of this application is significantly greater than that of the AlSiC composite materials prepared in Comparative Examples 1 to 5. This indicates that by performing dynamic stretching treatment along the x-axis direction on the pretreated silicon carbide substrate with added aluminum liquid in this application, the diffusion of aluminum liquid on the silicon carbide substrate can be significantly promoted. As the time of aluminum liquid droplets attached to the silicon carbide substrate increases, the wettability between the silicon carbide substrate and the aluminum liquid is significantly improved. Furthermore, the wetting angle of the AlSiC composite material prepared in Example 1 of this application is all below 90°, indicating that the aluminum liquid diffuses well on the surface of the silicon carbide substrate.

[0095] From Table 3 and Figure 3 It can be seen that the average interaction energy of the AlSiC composite material prepared in Example 1 of this application is significantly less than that of the AlSiC composite materials prepared in Comparative Examples 1 to 5. This indicates that by performing dynamic stretching treatment along the x-axis direction on the pretreated silicon carbide substrate with added aluminum liquid in the embodiments of this application, the diffusion of aluminum liquid on the silicon carbide substrate can be significantly promoted, and the wettability of the silicon carbide substrate surface can be enhanced.

[0096] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for preparing an AlSiC composite material, characterized in that, Includes the following steps: A silicon carbide substrate is provided, wherein the surface of the silicon carbide substrate is a silicon layer; Some silicon atoms are removed from the silicon layer to form several grooves; Carbon material is filled into the groove to form a pretreated silicon carbide substrate; Aluminum liquid droplets are attached to the pretreated silicon carbide substrate and subjected to dynamic stretching to form an AlSiC composite material. The dynamic stretching process includes: a deformation rate of 0.9 × 10⁻⁶. -5 nm / fs ~ 1.1 × 10 -5 nm / fs, stretching the silicon carbide substrate along the x-axis direction; The time step for the dynamic stretching process is 0.5~1.5fs, and the number of simulations is 10. 5 .

2. The preparation method according to claim 1, characterized in that, The step of removing some silicon atoms from the silicon layer includes: using a pulsed laser to perform laser scanning on the surface of the silicon carbide substrate to remove some silicon atoms from the silicon layer.

3. The preparation method according to claim 2, characterized in that, The laser scanning process has a wavelength of 800~1500nm, an average power of 5W / 100kHz~8W / 100kHz, a pulse width of 0.35~20ps, and a pulse energy of 0.05~0.1mJ.

4. The preparation method according to any one of claims 1 to 3, characterized in that, The volume of the aluminum droplet is 10~12 nm. 3 .

5. The preparation method according to any one of claims 1 to 3, characterized in that, The carbon material is selected from at least one of graphite, graphene, and carbon nanomaterials.

6. The preparation method according to any one of claims 1 to 3, characterized in that, The spacing between adjacent grooves is 0.15~10nm; And / or, the depth of the groove is 2~3nm; And / or, the groove is rectangular, with a length of 87~89nm and a width of 4~6nm.

7. An AlSiC composite material, characterized in that, The AlSiC composite material prepared by the method described in any one of claims 1 to 6 includes AlSiC composite materials.

8. The AlSiC composite material as described in claim 7, characterized in that, The wetting angle of the AlSiC composite material is <90°C.

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