A DFN fast packaging process suitable for power GPP chips

Abstract

The present invention discloses a DFN fast packaging process suitable for a power GPP chip, and relates to the field of chip packaging technology. The DFN fast packaging process suitable for a power GPP chip includes the following processes: a: placing a heat dissipation pad on a substrate frame, and then placing a chip body above the heat dissipation pad; b: then symmetrically welding a plurality of leads on the chip body; c: spreading a layer of thermal conductive silicone grease on the top of the chip body, and then placing a thermal conductive plate in the middle of the top of the thermal conductive silicone grease, and then welding a heat sink on the top of the thermal conductive plate, and then symmetrically welding thermal conductive columns on both sides of the thermal conductive plate, so that the insulating colloid fills the substrate frame; d: using a heating rod to contact the insulating colloid to heat the insulating colloid, and using a vibration device to oscillate the substrate frame for 10 to 30 minutes. The present invention provides a heat dissipation structure at the top and bottom of the chip body at the same time, thereby effectively improving the heat dissipation capacity of the packaged chip and increasing the heat dissipation capacity of the chip body.

Description

Technical Field

[0001] The present invention relates to the technical field of chip packaging, and in particular to a DFN rapid packaging process suitable for a power GPP chip. Background Art

[0002] Chip packaging uses an insulator to encapsulate the outside of the chip, while also considering the chip's heat dissipation capabilities. The traditional GPP chip's DFN packaging refers to a pinless packaging process, in which the chip is only dissipated through the heat dissipation metal on one side, while the other side is protected by an insulating colloid and also dissipated through the insulating colloid.

[0003] The defects of the existing packaging process are:

[0004] 1. The prior art KR1020140099159A discloses a semiconductor packaging process and structure thereof, and discloses a method capable of reducing the overall packaging cost. The heat dissipation surface of the chip of the packaging process is dissipated through one side and the other side is encapsulated by insulating glue. The heat dissipation capacity of the insulating glue is weak. Therefore, a DFN fast packaging process suitable for power GPP chips that can increase the heat dissipation capacity of the chip is needed to solve this problem.

[0005] 2. Prior art US07432127B2 discloses chip packaging and packaging processes, and discloses a method that can effectively improve the overflow of the adhesive layer during chip packaging to prevent the adhesive layer from seeping out from the periphery of the chip, thereby enhancing the connection strength between the chip and the packaging substrate. The chip is packaged by insulating glue, and the thermal conductivity of the insulating glue is not high, resulting in weak heat dissipation capacity of the chip through the insulating glue. Therefore, a DFN rapid packaging process suitable for power GPP chips that can increase the heat dissipation efficiency of the insulating glue is needed to solve this problem.

[0006] 3. Prior art US07482204B2 discloses a chip packaging process. The chip packaging is torsion-resistant. The chip packaging process increases the overall production cost. During the production process, when the insulator is packaged on the outside of the chip, the air in the insulator is not removed. There is easily a large amount of air in the insulator, which weakens the heat dissipation capacity of the insulator. Therefore, a DFN fast packaging process suitable for power GPP chips that can reduce the air content in the insulator is needed to solve this problem.

[0007] 4. Prior art CN112420532B discloses a packaging process for leadless DFN packaging devices. The prepared devices effectively avoid the problem of reduced thermal conductivity caused by pores and thus electrical failure. The incidence of internal pores is low. The packaged chips produced by this process have no anti-compression structure. After the chip is compressed, the interface between the insulator and the chip is easily detached and a gap is formed, causing obstacles to the heat conduction of the chip to the insulator. Therefore, a DFN rapid packaging process suitable for power GPP chips that can improve the compression resistance of the packaged chip is needed to solve this problem. Summary of the invention

[0008] One purpose of the present application is to provide a DFN rapid packaging process suitable for power GPP chips, which can solve the technical problems raised in the prior art.

[0009] To achieve the above object, the present invention provides the following technical solution: a DFN fast packaging process applicable to a power GPP chip, the DFN fast packaging process applicable to a power GPP chip comprising the following process:

[0010] a: Place the heat dissipation pad on the substrate frame, then inject a layer of silver paste on the heat dissipation pad, and then place the chip body on top of the heat dissipation pad;

[0011] b: Then, multiple leads are symmetrically welded on the chip body, and a conductive pad is welded on one end of the lead, and the conductive pad is neatly arranged on the top of the substrate frame;

[0012] c: Spread a layer of thermal grease on the top of the chip body, then place a thermal conductive plate in the middle of the top of the thermal grease, then weld a heat sink on the top of the thermal conductive plate, then symmetrically weld thermal conductive columns on both sides of the thermal conductive plate, then symmetrically place the fixing frame inside the substrate frame, and finally inject the insulating colloid into the substrate frame until the insulating colloid fills the substrate frame;

[0013] d: Use a heating rod to contact the insulating colloid to heat the insulating colloid to ensure that the insulating colloid does not solidify during the vibration process, and use a vibration device to oscillate the substrate frame for 10 to 30 minutes to make the bubbles in the insulating colloid in the substrate frame quickly overflow upward in the insulating colloid.

[0014] Preferably, in step d, the outer side of the heating rod is insulated with thermal insulation cotton to keep the portion not in contact with the insulating colloid warm.

[0015] Preferably, the vibration device in step d includes a plate body, a vibrator, a rod body, a cylinder and a vibration rod, the vibrator is installed on the top of the plate body, the rod body is symmetrically installed on the back of the plate body, multiple cylinders are symmetrically installed on both sides of the rod body, and the vibration rod is installed on the output end of the cylinder.

[0016] Preferably, in the step d, the vibration rods of the vibration device contact two sides of the substrate frame, the vibrator vibrates the conductive vibration rods, and the vibration rods vibrate the substrate frame.

[0017] Preferably, the conductive pads are symmetrically distributed on the top of the substrate frame with the heat dissipation pad as the center.

[0018] Preferably, the heat conducting plate and the heat conducting column are made of copper or aluminum.

[0019] Preferably, the preparation method of the insulating colloid is as follows:

[0020] S1. Add 1 to 3 parts of flame retardant, 10 to 20 parts of silicone grease with good thermal conductivity and 1 part of epoxy resin into a stirring device according to the weight ratio, heat the mixture to 100° C., and then slowly stir and mix it for 10 to 30 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute;

[0021] S2. Stop stirring the mixture in S1 by the stirring device to ensure that the mixture is kept at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture to make the bubbles move upward and overflow, thereby reducing the bubbles in the mixture and obtaining an insulating colloid.

[0022] Preferably, the flame retardant is one of chlorinated paraffin or octabromoether.

[0023] Preferably, the fixing frame is made of stainless steel, and the fixing frame passes through the front and back sides of the insulating colloid.

[0024] Preferably, the heat sink is made of thermally conductive silicone sheet, copper or aluminum.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] 1. The present invention arranges heat dissipation structures at the top and bottom of the chip body at the same time, thereby effectively improving the heat dissipation capacity of the packaged chip, increasing the heat dissipation capacity of the chip body, and thus improving the performance of the chip body, so that the DFN rapid packaging process suitable for power GPP chips arranges heat dissipation structures at the top and bottom of the chip body at the same time, thereby effectively improving the heat dissipation capacity of the packaged chip.

[0027] 2. The present invention arranges heat-conducting columns on both sides of the heat-conducting plate, and the heat-conducting columns are inserted into the interior of the insulating colloid, so that the heat of the insulating colloid can be transferred to the heat-conducting plate through the heat-conducting columns, and then transferred to the heat sink through the heat-conducting plate, so that the heat of the insulating colloid can be dissipated to the outside faster, further improving the heat dissipation capacity of the packaged chip, so that the DFN fast packaging process suitable for the power GPP chip can transfer the heat of the insulating colloid to the heat-conducting plate through the heat-conducting columns, and then dissipate it faster through the heat sink, thereby improving the heat dissipation efficiency of the packaged chip.

[0028] 3. In the present invention, when preparing the insulating colloid, the bubbles in the insulating colloid are made to overflow through an ultrasonic vibration device, and when injecting the insulating colloid into the substrate frame, the bubbles in the insulating colloid in the substrate frame are further vibrated and overflowed through a vibration device, thereby reducing the bubbles in the insulating colloid, reducing the air content with strong heat insulation ability in the packaged chip, and further improving the heat dissipation capacity of the packaged chip, so that the DFN rapid packaging process suitable for the power GPP chip can reduce the air content of the packaged chip through vibration, and further improve the heat dissipation capacity of the packaged chip.

[0029] 4. The present invention installs a fixing frame on the outside of the insulating colloid, which can significantly improve the pressure resistance of the chip, thereby reducing the damage to the packaged chip when it is compressed by a large object, avoiding the formation of pores between the insulating colloid and the chip to introduce air and reduce the heat dissipation capacity, thereby increasing the life of the chip and making it suitable for the DFN rapid packaging process of power GPP chips. The present invention installs a fixing frame on the outside of the insulating colloid, which can significantly improve the pressure resistance of the chip, thereby reducing the damage to the packaged chip when it is compressed by a large object, avoiding the formation of pores between the insulating colloid and the chip to introduce air and reduce the heat dissipation capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a process flow chart of the present invention;

[0031] Figure 2 It is a schematic diagram of the insulating colloid structure of the present invention;

[0032] Figure 3 It is a schematic diagram of the chip body structure of the present invention;

[0033] Figure 4 It is a schematic diagram of the plate structure of the present invention.

[0034] In the figure: 1. substrate frame; 2. heat dissipation pad; 3. silver paste layer; 4. chip body; 5. lead; 6. conductive pad; 7. thermal grease; 8. thermal conductive plate; 9. heat sink; 10. thermal conductive column; 11. insulating colloid; 12. fixing frame; 13. board body; 14. vibrator; 15. rod body; 16. cylinder; 17. vibration rod. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0038] See also Figure 1 , Figure 2 and Figure 3 A DFN fast packaging process suitable for a power GPP chip, the DFN fast packaging process suitable for a power GPP chip comprising the following processes:

[0039] a: placing the heat dissipation pad 2 on the substrate frame 1, then injecting a layer of silver paste 3 on the heat dissipation pad 2, and then placing the chip body 4 on the heat dissipation pad 2;

[0040] b: Subsequently, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0041] c: Spread a layer of thermal grease 7 on the top of the chip body 4, then place a thermal conductive plate 8 in the middle of the top of the thermal grease 7, then weld a heat sink 9 on the top of the thermal conductive plate 8, then symmetrically weld thermal conductive columns 10 on both sides of the thermal conductive plate 8, then symmetrically place the fixing frame 12 inside the substrate frame 1, and finally inject the insulating colloid 11 into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0042] d: Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, and use a vibration device to oscillate the substrate frame 1 for 10 to 30 minutes to make the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0043] In step d, the outer side of the heating rod is insulated with heat-insulating cotton for the portion not in contact with the insulating colloid 11 .

[0044] The vibration device in step d includes a plate body 13, a vibrator 14, a rod body 15, a cylinder 16 and a vibration rod 17. The vibrator 14 is installed on the top of the plate body 13, the rod body 15 is symmetrically installed on the back of the plate body 13, and multiple cylinders 16 are symmetrically installed on both sides of the rod body 15. The vibration rod 17 is installed on the output end of the cylinder 16.

[0045] In step d, the vibration rods 17 of the vibration device contact the two sides of the substrate frame 1 , the vibrator 14 vibrates the conductive vibration rods 17 , and the vibration rods 17 vibrate the substrate frame 1 .

[0046] The conductive pads 6 are symmetrically distributed on the top of the substrate frame 1 with the heat dissipation pad 2 as the center.

[0047] The heat conducting plate 8 and the heat conducting column 10 are made of copper or aluminum.

[0048] The preparation method of the insulating colloid 11 is as follows:

[0049] S1. Add 1 to 3 parts of flame retardant, 10 to 20 parts of silicone grease with good thermal conductivity and 60 to 120 parts of epoxy resin by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it for 10 to 30 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute;

[0050] S2, stopping the stirring device from stirring the mixture in S1 to ensure that the mixture is kept at 100°C, and then using an ultrasonic vibration device to perform ultrasonic defoaming on the mixture to make the bubbles move upward and overflow, thereby reducing the bubbles in the mixture, and then obtaining an insulating colloid 11.

[0051] The flame retardant is one of chlorinated paraffin or octabromoether.

[0052] The fixing frame 12 is made of stainless steel and penetrates the front and back sides of the insulating colloid 11 .

[0053] The material of the heat sink 9 is a thermally conductive silicone sheet, copper or aluminum.

[0054] Embodiment 1:

[0055] 1. Place the heat dissipation pad 2 on the substrate frame 1, then inject a layer of silver paste 3 on the heat dissipation pad 2, and then place the chip body 4 on the heat dissipation pad 2;

[0056] 2. Then, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0057] 3. Add a mixture of 1 part of flame retardant, 10 parts of silicone grease with good thermal conductivity and 60 parts of epoxy resin in proportion by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it for 10 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute, stop stirring the mixture in S1 by the stirring device, ensure that the mixture remains at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, reduce the bubbles in the mixture, and then obtain an insulating colloid 11;

[0058] Fourth, a layer of thermal conductive silicone grease 7 is spread on the top of the chip body 4, and then a thermal conductive plate 8 is placed in the middle of the top of the thermal conductive silicone grease 7, and then a heat sink 9 is welded on the top of the thermal conductive plate 8, and then thermal conductive columns 10 are symmetrically welded on both sides of the thermal conductive plate 8, and then the fixing frame 12 is symmetrically placed inside the substrate frame 1, and finally the insulating colloid 11 is injected into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0059] 5. Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, use the vibration rod 17 of the vibration device to contact both sides of the substrate frame 1, and then the vibrator 14 drives the vibration rod 17 to vibrate and oscillate the substrate frame 1 10, so that the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0060] Embodiment 2:

[0061] 1. Place the heat dissipation pad 2 on the substrate frame 1, then inject a layer of silver paste 3 on the heat dissipation pad 2, and then place the chip body 4 on the heat dissipation pad 2;

[0062] 2. Then, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0063] 3. Add a mixture of 3 parts of flame retardant, 10 parts of silicone grease with good thermal conductivity and 60 parts of epoxy resin in proportion by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it for 10 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute, stop stirring the mixture in S1 by the stirring device, ensure that the mixture remains at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, reduce the bubbles in the mixture, and then obtain an insulating colloid 11;

[0064] Fourth, a layer of thermal conductive silicone grease 7 is spread on the top of the chip body 4, and then a thermal conductive plate 8 is placed in the middle of the top of the thermal conductive silicone grease 7, and then a heat sink 9 is welded on the top of the thermal conductive plate 8, and then thermal conductive columns 10 are symmetrically welded on both sides of the thermal conductive plate 8, and then the fixing frame 12 is symmetrically placed inside the substrate frame 1, and finally the insulating colloid 11 is injected into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0065] 5. Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, use the vibration rod 17 of the vibration device to contact both sides of the substrate frame 1, and then the vibrator 14 drives the vibration rod 17 to vibrate the substrate frame 1 for 10 minutes, so that the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0066] Embodiment three:

[0067] 1. Place the heat dissipation pad 2 on the substrate frame 1, then inject a layer of silver paste 3 on the heat dissipation pad 2, and then place the chip body 4 on the heat dissipation pad 2;

[0068] 2. Then, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0069] 3. Add a mixture of 1 part of flame retardant, 20 parts of silicone grease with good thermal conductivity and 60 parts of epoxy resin in proportion by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it for 10 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute, stop stirring the mixture in S1 by the stirring device, ensure that the mixture remains at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, reduce the bubbles in the mixture, and then obtain an insulating colloid 11;

[0070] Fourth, a layer of thermal conductive silicone grease 7 is spread on the top of the chip body 4, and then a thermal conductive plate 8 is placed in the middle of the top of the thermal conductive silicone grease 7, and then a heat sink 9 is welded on the top of the thermal conductive plate 8, and then thermal conductive columns 10 are symmetrically welded on both sides of the thermal conductive plate 8, and then the fixing frame 12 is symmetrically placed inside the substrate frame 1, and finally the insulating colloid 11 is injected into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0071] 5. Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, use the vibration rod 17 of the vibration device to contact both sides of the substrate frame 1, and then the vibrator 14 drives the vibration rod 17 to vibrate the substrate frame 1 for 10 minutes, so that the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0072] Embodiment 4:

[0073] 1. Place the heat dissipation pad 2 on the substrate frame 1, then inject a layer of silver paste 3 on the heat dissipation pad 2, and then place the chip body 4 on the heat dissipation pad 2;

[0074] 2. Then, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0075] 3. Add a mixture of 1 part of flame retardant, 15 parts of silicone grease with good thermal conductivity and 60 parts of epoxy resin in proportion by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it for 10 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute, stop stirring the mixture in S1 by the stirring device, ensure that the mixture remains at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, reduce the bubbles in the mixture, and then obtain an insulating colloid 11;

[0076] Fourth, a layer of thermal conductive silicone grease 7 is spread on the top of the chip body 4, and then a thermal conductive plate 8 is placed in the middle of the top of the thermal conductive silicone grease 7, and then a heat sink 9 is welded on the top of the thermal conductive plate 8, and then thermal conductive columns 10 are symmetrically welded on both sides of the thermal conductive plate 8, and then the fixing frame 12 is symmetrically placed inside the substrate frame 1, and finally the insulating colloid 11 is injected into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0077] 5. Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, use the vibration rod 17 of the vibration device to contact both sides of the substrate frame 1, and then the vibrator 14 drives the vibration rod 17 to vibrate the substrate frame 1 for 10 minutes, so that the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0078] Embodiment five:

[0079] 1. Place the heat dissipation pad 2 on the substrate frame 1, then inject a layer of silver paste 3 on the heat dissipation pad 2, and then place the chip body 4 on the heat dissipation pad 2;

[0080] 2. Then, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0081] 3. Add a mixture of 1 part of flame retardant, 15 parts of silicone grease with good thermal conductivity and 60 parts of epoxy resin in proportion by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it with the stirring device for 20 minutes, with the stirring rod rotating at 10 revolutions per minute, stop stirring the mixture in S1 with the stirring device, ensure that the mixture remains at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, reduce the bubbles in the mixture, and then obtain an insulating colloid 11;

[0082] Fourth, a layer of thermal conductive silicone grease 7 is spread on the top of the chip body 4, and then a thermal conductive plate 8 is placed in the middle of the top of the thermal conductive silicone grease 7, and then a heat sink 9 is welded on the top of the thermal conductive plate 8, and then thermal conductive columns 10 are symmetrically welded on both sides of the thermal conductive plate 8, and then the fixing frame 12 is symmetrically placed inside the substrate frame 1, and finally the insulating colloid 11 is injected into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0083] 5. Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, use the vibration rod 17 of the vibration device to contact both sides of the substrate frame 1, and then the vibrator 14 drives the vibration rod 17 to vibrate the substrate frame 1 for 10 minutes, so that the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0084] Embodiment six:

[0085] 1. Place the heat dissipation pad 2 on the substrate frame 1, then inject a layer of silver paste 3 on the heat dissipation pad 2, and then place the chip body 4 on the heat dissipation pad 2;

[0086] 2. Then, a plurality of leads 5 are symmetrically welded on the chip body 4, and a conductive pad 6 is welded on one end of the lead 5, and the conductive pad 6 is neatly arranged on the top of the substrate frame 1;

[0087] 3. Add a mixture of 1 part of flame retardant, 15 parts of silicone grease with good thermal conductivity and 60 parts of epoxy resin in proportion by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it with the stirring device for 20 minutes, with the stirring rod rotating at 10 revolutions per minute, stop stirring the mixture in S1 with the stirring device, ensure that the mixture remains at 100° C., and then use an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, reduce the bubbles in the mixture, and then obtain an insulating colloid 11;

[0088] Fourth, a layer of thermal conductive silicone grease 7 is spread on the top of the chip body 4, and then a thermal conductive plate 8 is placed in the middle of the top of the thermal conductive silicone grease 7, and then a heat sink 9 is welded on the top of the thermal conductive plate 8, and then thermal conductive columns 10 are symmetrically welded on both sides of the thermal conductive plate 8, and then the fixing frame 12 is symmetrically placed inside the substrate frame 1, and finally the insulating colloid 11 is injected into the substrate frame 1, so that the insulating colloid 11 fills the substrate frame 1;

[0089] 5. Use a heating rod to contact the insulating colloid 11 to heat the insulating colloid 11 to ensure that the insulating colloid 11 does not solidify during the vibration process, use the vibration rod 17 of the vibration device to contact both sides of the substrate frame 1, and then the vibrator 14 drives the vibration rod 17 to vibrate the substrate frame 1 for 20 minutes, so that the bubbles in the insulating colloid 11 in the substrate frame 1 quickly overflow upward in the insulating colloid 11.

[0090] Performance Test:

[0091] 1. Thermal conductivity: Use a heating rod of equal power to heat the insulating colloid 11 from the front side, and test the temperature of the back side of the insulating colloid 11 after 3 seconds;

[0092] 2. Compression resistance: The press machine presses the product from top to bottom to test how much pressure the product is subjected to and how much it deforms.

[0093] Test data of each embodiment under the same test conditions

[0094]

[0095]

[0096] It can be seen from the experimental data that the packaged chip of this product has good pressure resistance. When subjected to external pressure, its internal structure is not easy to detach, and it is not easy to form a gap, and air is not easy to enter, thereby avoiding the situation where the thermal resistance of the air causes the chip to dissipate heat slowly. In addition, when the content of silicone grease with good thermal conductivity in the insulating colloid 11 of the packaged chip is increased, the heat dissipation capacity of the packaged chip is increased.

[0097] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, from all points of view, the embodiments should be regarded as exemplary and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention, and any reference signs in the claims should not be regarded as limiting the rights involved.

Claims

1. A DFN rapid packaging process suitable for power GPP chips, characterized by: The DFN rapid packaging process suitable for power GPP chips includes the following processes: a: placing a heat dissipation pad (2) on a substrate frame (1), then injecting a layer of silver paste (3) above the heat dissipation pad (2), and then placing a chip body (4) above the heat dissipation pad (2); b: Subsequently, a plurality of leads (5) are symmetrically welded on the chip body (4), and a conductive pad (6) is welded on one end of the lead (5), and the conductive pad (6) is neatly arranged on the top of the substrate frame (1); c: spreading a layer of thermal grease (7) on the top of the chip body (4), then placing a thermal conductive plate (8) in the middle of the top of the thermal grease (7), then welding a heat sink (9) on the top of the thermal conductive plate (8), then symmetrically welding thermal conductive columns (10) on both sides of the thermal conductive plate (8), then symmetrically placing a fixing frame (12) inside the substrate frame (1), and finally injecting an insulating colloid (11) into the substrate frame (1) so that the insulating colloid (11) fills the substrate frame (1); d: using a heating rod to contact the insulating colloid (11) to heat the insulating colloid (11), ensuring that the insulating colloid (11) does not solidify during the vibration process, and using a vibration device to vibrate the substrate frame (1) for 10 to 30 minutes, so that bubbles in the insulating colloid (11) in the substrate frame (1) quickly overflow upward in the insulating colloid (11); The preparation method of the insulating colloid (11) is as follows: S1. Add 1 to 3 parts of flame retardant, 10 to 20 parts of silicone grease with good thermal conductivity and 60 to 120 parts of epoxy resin by weight into a stirring device, heat the mixture to 100° C., and then slowly stir and mix it for 10 to 30 minutes using the stirring device, with the stirring rod rotating at 10 revolutions per minute; S2, stopping the stirring device from stirring the mixture in S1, ensuring that the mixture is kept at 100°C, and then using an ultrasonic vibration device to ultrasonically defoam the mixture, so that the bubbles move upward and overflow, thereby reducing the bubbles in the mixture, and then obtaining an insulating colloid (11).

2. The DFN rapid packaging process suitable for power GPP chips according to claim 1, characterized in that: In step d, the outer side of the heating rod is insulated with thermal insulation cotton for the portion that is not in contact with the insulating colloid (11).

3. The DFN rapid packaging process suitable for power GPP chips according to claim 2, characterized in that: The vibration device in step d comprises a plate body (13), a vibrator (14), a rod body (15), a cylinder (16) and a vibration rod (17), wherein the vibrator (14) is mounted on the top of the plate body (13), the rod body (15) is symmetrically mounted on the back of the plate body (13), a plurality of cylinders (16) are symmetrically mounted on both sides of the rod body (15), and the vibration rod (17) is mounted on the output end of the cylinder (16).

4. The DFN rapid packaging process suitable for power GPP chips according to claim 3, characterized in that: In the step d, the vibration rod (17) of the vibration device contacts two sides of the substrate frame (1), the vibrator (14) vibrates the conductive vibration rod (17), and the vibration rod (17) vibrates the substrate frame (1).

5. The DFN rapid packaging process suitable for power GPP chips according to claim 4, characterized in that: The conductive pads (6) are symmetrically distributed on the top of the substrate frame (1) with the heat dissipation pad (2) as the center.

6. The DFN rapid packaging process suitable for power GPP chips according to claim 5, characterized in that: The material of the heat conducting plate (8) and the heat conducting column (10) is copper or aluminum.

7. The DFN rapid packaging process suitable for power GPP chips according to claim 1, characterized in that: The flame retardant is one of chlorinated paraffin or octabromoether.

8. The DFN rapid packaging process suitable for power GPP chips according to claim 7, characterized in that: The fixing frame (12) is made of stainless steel, and the fixing frame (12) penetrates the front and back sides of the insulating colloid (11).

9. The DFN rapid packaging process suitable for power GPP chips according to claim 8, characterized in that: The material of the heat sink (9) is one of a thermally conductive silicone sheet, copper or aluminum.

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