Apparatus for removing backside deposits from silicon carbide wafers

Abstract

The application discloses a silicon carbide wafer growth backside deposit removing device and relates to the technical field of wafer growth. The device comprises a base, a loading disc fixed above the base, a driving seat fixed at the back of the base, a placing seat installed in the middle of the loading disc through support columns and multilayer connecting mechanisms, support frames fixed at both sides of the placing seat, a liquid injection pipe arranged in the support frames, a motor arranged on one side of the driving seat, a rotating disc installed on the output end of the motor through rotating columns, the rotating disc being opposite to the placing seat, a grinding wheel fixed at the bottom of the rotating disc, and cleaning bristles arranged on the side of the rotating disc through lifting mechanisms. The device has the advantages of simple structure, high cleaning speed and suitability for popularization. The device is used for the silicon carbide wafer produced by the method of plating metal on the back surface, corrodes the metal layer on the wafer, sweeps off the metal layer and the deposits adhered to the metal layer after corrosion, and cleans the remaining deposits by polishing after the corrosion of the metal layer.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of wafer growth, and particularly relates to a device for removing backside deposits of silicon carbide wafer growth. BACKGROUND

[0002] Silicon carbide single crystal material has the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy. In various silicon carbide epitaxial layer preparation methods, chemical vapor deposition (CVD) is the most commonly used, which is a method of generating a thin film on the surface of a substrate by chemical reaction of one or more gas phase compounds or elements containing thin film elements.

[0003] Due to the fact that the back surface (non-epitaxial growth surface) of the substrate wafer does not contact the sample holder surface tightly, and other reasons, the back surface of the wafer is also the (000-1) surface (commonly known as the "C surface or carbon surface") of the silicon carbide crystal, which will also grow a misty deposit generated by gas reaction, which is called "white spot" in the industry. The white spot can only be removed by a later polishing process. The white spot is essentially a non-uniformly distributed silicon carbide polycrystalline crystal with a Mohs hardness of 9.5, which is only second to diamond (10) which is the hardest in the world. This brings great difficulty to the polishing process. Therefore, the prior art proposes a method of depositing a dense refractory metal layer or alloy layer on the back surface of the silicon carbide single crystal substrate to isolate the growth reaction gas from the silicon carbide lattice of the back surface of the substrate, which can effectively reduce the deposition rate of silicon carbide on the back surface of the substrate. When cleaning, the metal layer can be removed by etching and dissolving, and the remaining deposits can be removed by polishing.

[0004] When removing the deposits by this method, the existing polishing instruments cannot perform etching operations before polishing, which needs to be done manually, causing inconvenience. SUMMARY

[0005] The purpose of the present application is to provide a device for removing backside deposits of silicon carbide wafer growth, which is simple in structure and suitable for silicon carbide wafers produced by plating metal on the back surface. The metal layer on the wafer is etched, the etched metal layer and the deposits adhered thereto are swept off, and the remaining deposits are cleaned by polishing after the metal layer is etched, which greatly improves the cleaning speed and is suitable for promotion.

[0006] The present application provides the following technical solution: a device for removing backside deposits of silicon carbide wafer growth, comprising a base, a loading tray is fixedly arranged above the base, a driving seat is fixedly arranged at the rear of the base, a placing seat is installed in the middle of the loading tray through a support column and a plurality of connecting mechanisms, support frames are fixedly arranged on both sides of the loading tray, a liquid injection pipe is arranged in the support frame, and the opening of the liquid injection pipe is located on the side wall of the placing seat.

[0007] The driving seat is located on one side of the carrier disc and is provided with a lifting frame, the lifting frame is fixedly provided with a motor through a fixing ring, the output end of the motor is installed with a rotating disc through a rotating column, the rotating disc is opposite to the position of the placing seat, the bottom of the rotating disc is fixedly provided with a grinding wheel, and the side of the rotating disc is installed with cleaning bristles which are surrounded inwardly through a lifting mechanism.

[0008] Preferably, the side of the rotating disc is provided with a first clamping groove which is relatively symmetrical, the side of the rotating disc is surrounded with an upper lifting ring, the inner wall of the upper lifting ring is clamped in the first clamping groove, and the upper surface of the upper lifting ring is fixedly connected with a first spring which is located in the first clamping groove, the rotating disc is surrounded with a lower lifting ring, the rotating disc is provided with a side clamping groove which is relatively symmetrical below the lower lifting ring, an extension frame is fixedly arranged below the lower lifting ring and located in the side clamping groove, the extension frame is slidably connected with the side clamping groove, the extension frame is formed into a support which extends outwardly and then downwardly below the side clamping groove, the lower end of the extension frame is fixedly provided with a mounting ring, and the cleaning bristles are fixed to the inner wall of the mounting ring.

[0009] Preferably, the upper end of the support column is provided with a bottom disc, the support column is inserted into the bottom disc, a plurality of second clamping grooves in a circumferential array are arranged in the bottom disc and located at the support column, a support block is fixedly arranged at the support column and located in the second clamping groove, the upper surface of the support block is fixedly connected with a second spring which is located in the second clamping groove, and an intermediate ring is arranged at the upper edge of the bottom disc.

[0010] Preferably, the upper surface of the bottom disc is provided with a groove bottom which is located in the intermediate ring, a plurality of spring grooves in a circumferential array are arranged in the intermediate ring, a telescopic rod is slidably arranged in the spring groove and penetrates the inner side of the spring groove, a pressing block is fixedly arranged at one end of the telescopic rod which is located outside the spring groove, and a supporting spring is fixedly arranged at the other end of the telescopic rod which is located inside the spring groove.

[0011] Preferably, the upper surface of the intermediate ring is closely attached to the placing seat when it is not subjected to downward pressure, the lower surface of the intermediate ring is closely attached to the bottom disc, the side of the intermediate ring and the bottom disc is provided with a water leakage straight groove which penetrates through, a liquid storage groove is fixedly arranged in the support frame and located below the water leakage straight groove, the liquid injection pipe is injected with a metal corrosion liquid, and a surrounding barrier wall is fixedly arranged above the placing seat.

[0012] Preferably, the upper surface of the intermediate ring which is located outside the placing seat is provided with a brush clamping groove, the position of the brush clamping groove is opposite to the mounting ring, and the size of the brush clamping groove satisfies that the cleaning bristles are bent by the inner wall of the brush clamping groove and are directed upwardly when the mounting ring is pressed in.

[0013] Preferably, the bottom of the intermediate ring is fixed with a circumferential array of hook rods, the upper surface of the bottom disc is provided with a third clamping groove corresponding to the hook rods, the hook rods are inserted into the third clamping groove and extend from one side of the bottom, a third spring is fixed at the extended support of the hook rods, the third spring is fixedly connected with the upper wall of the third clamping groove, the hook rods are tightly connected with the bottom disc at the position penetrating into the third clamping groove, and the telescopic rod is tightly connected with the intermediate ring at the position penetrating out of the spring groove.

[0014] Preferably, a control button is arranged on the base and connected with the driving seat and the motor circuit signal, the motor has two working states of fast and slow, and the driving seat has two pressing states, that is, the cleaning brush is located on the back metal layer of the silicon carbide wafer or the grinding wheel is pressed on the silicon carbide wafer to separate the placing seat, the bottom disc and the intermediate ring.

[0015] The present application has the advantages of simple structure, corrosion of the metal layer on the silicon carbide wafer produced by back plating, sweeping of the corroded metal layer and the deposited substances adhered thereto, and polishing of the remaining deposited substances after the metal layer is corroded, which greatly improves the cleaning speed.

[0016] (1) The present application is provided with cleaning brush, when the silicon carbide wafer is placed on the groove bottom, the four pressing blocks are pressed to compress the supporting spring, the four pressing blocks press the side edges of the silicon carbide wafers of different sizes to fix them, the liquid injection pipe injects the etching liquid into the placing seat, at this time, the driving seat drives the rotary disc to descend, when the cleaning brush descends to the metal layer of the silicon carbide wafer, the motor drives the cleaning brush to rotate around the silicon carbide wafer, the cleaning brush sweeps the corroded metal to accelerate the corrosion speed, and after the corrosion is completed, the rotary disc continues to press down, at this time, the mounting ring of the cleaning brush is pressed into the brush clamping groove, the cleaning brush towards the silicon carbide wafer is bent upwards, so that the grinding wheel is not affected by the cleaning brush when polishing the residual deposited substances of the silicon carbide wafer, and the extension frame connected with the cleaning brush is separated from the side clamping groove, so that the cleaning brush does not rotate with the rotary disc to prevent the cleaning brush from being worn.

[0017] (2) The present application is provided with a placing seat, when the grinding wheel is pressed on the silicon carbide wafer, the silicon carbide wafer is pressed, the bottom disc is pressed, the supporting force of the bottom disc on the intermediate ring is reduced, the intermediate ring is lowered, the upper part thereof is separated from the placing seat to form a gap for the waste liquid to pass through, the third clamping groove on the bottom disc is lowered, the third spring in the third clamping groove is a tensile spring, the third spring is contracted to lift the hook rod, drive the intermediate ring to lift, separate the intermediate ring from the bottom disc below to form a gap for the waste liquid to pass through, after the waste liquid passes through the gap, it leaks into the liquid storage tank from the water leakage straight groove, so as to discharge the waste liquid from the placing seat, and the grinding wheel polishes and cleans the residual deposited substances on the silicon carbide wafer. BRIEF DESCRIPTION OF DRAWINGS

[0018] The accompanying drawings are used to provide further understanding of the present application, and constitute a part of the specification, and are used to explain the present application together with embodiments of the present application, and do not constitute a limitation on the present application.

[0019] In the drawings:

[0020] Figure 1 is a schematic view of the present application as a whole;

[0021] Figure 2 is a sectional view of the present application;

[0022] Figure 3 is an enlarged view of A of the present application;

[0023] Figure 4 is an enlarged view of B of the present application;

[0024] Figure 5 is a sectional view of the present application when the abrasive wheel is polishing;

[0025] In the drawings, reference signs are indicated as follows: 1, base; 2, carrier disc; 3, drive seat; 4, lifting frame; 5, placing seat; 6, support frame; 7, groove bottom; 8, fixing ring; 9, motor; 10, rotating disc; 11, cleaning bristles; 12, abrasive wheel; 13, support column; 14, bottom disc; 15, middle ring; 16, spring groove; 17, telescopic rod; 18, liquid storage groove; 19, rotating column; 20, first clamping groove; 21, first spring; 22, upper lifting ring; 23, side edge clamping groove; 24, lower lifting ring; 25, extension frame; 26, mounting ring; 27, second clamping groove; 28, liquid injection pipe; 29, second spring; 30, support spring; 31, hook rod; 32, third clamping groove; 33, third spring; 34, water leakage straight groove; 35, brush clamping groove; 36, support block; 37, pressing block; 38, silicon carbide wafer. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings of the embodiments of the present application; obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application, and all other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative labor fall within the scope of protection of the present application.

[0027] In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", "top / bottom end" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0028] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "provided with", "sleeved / connected", "connected" and the like should be understood broadly, for example, "connected" can be fixedly connected, or detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, or can be connected internally between two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0029] The structural features of the present application will be described in detail in conjunction with the accompanying drawings.

[0030] Referring to Figures 1-2 A silicon carbide wafer growth backside deposit removal device, comprising a base 1, a loading tray 2 is fixedly arranged above the base 1, a driving seat 3 is fixedly arranged at the back of the base 1, a placing seat 5 is mounted in the middle of the loading tray 2 through a support column 13 and a multi-layer connecting mechanism, a silicon carbide wafer is placed in the placing seat 5 to remove the backside deposits, support frames 6 are fixedly arranged on both sides of the placing seat 5, the placing seat 5 is fixed through the support frames 6, a liquid injection pipe 28 is arranged in the support frame 6, the opening of the liquid injection pipe 28 is located at the side wall of the placing seat 5, and the liquid injection pipe 28 is used to inject etching liquid or grinding liquid into the placing seat 5.

[0031] Referring to Figures 1-2 A lifting frame 4 is arranged at one side of the driving seat 3, a motor 9 is fixedly arranged on the lifting frame 4 through a fixing ring 8, a rotating disc 10 is mounted on the output end of the motor 9 through a rotating column 19, the rotating disc 10 is opposite to the position of the placing seat 5, a grinding wheel 12 is fixedly arranged at the bottom of the rotating disc 10, inwardly surrounding cleaning bristles 11 are mounted on the side edge of the rotating disc 10 through a lifting mechanism, and the metal corroded off is swept down through the cleaning bristles 11 to accelerate the corrosion speed.

[0032] Referring to Figures 1-3, the side of the rotating disc 10 is provided with the first clamping groove 20 which is symmetrical, the rotating disc 10 is surrounded by the upper lifting ring 22, the inner wall of the upper lifting ring 22 is clamped in the first clamping groove 20, and the upper surface of the upper lifting ring 22 is fixedly connected with the first spring 21 which is located in the first clamping groove 20, the rotating disc 10 is surrounded by the lower lifting ring 24, the lower lifting ring 24 is pressed downward by the first spring 21, the rotating disc 10 is provided with the side clamping groove 23 which is symmetrical below the lower lifting ring 24, the extension frame 25 is fixedly arranged below the side clamping groove 23, the extension frame 25 is slidably connected with the side clamping groove 23, the extension frame 25 is formed to extend outward and then downward below the side clamping groove 23, when the lower lifting ring 24 is pressed downward, the extension frame 25 is clamped in the side clamping groove 23, so that the extension frame 25 rotates with the rotating disc 10, the lower end of the extension frame 25 is fixedly provided with the mounting ring 26, and the cleaning brush 11 is fixed to the inner wall of the mounting ring 26.

[0033] Referring to Figure 2 , 4 , 5, the bottom disc 14 is arranged above the support column 13, the support column 13 is inserted into the bottom disc 14, the second clamping groove 27 in the circular array is arranged inside the bottom disc 14 and located at the support column 13, the support block 36 is fixedly arranged at the second clamping groove 27 and located at the support column 13, the bottom disc 14 cannot rotate through the support block 36, the second spring 29 is fixedly connected to the upper surface of the support block 36 and located in the second clamping groove 27, and the bottom disc 14 is lifted upward through the second spring 29, the intermediate ring 15 is arranged at the upper edge of the bottom disc 14, the upper surface of the intermediate ring 15 is attached to the placement seat 5, so that the intermediate ring 15 is kept sealed with the placement seat 5, the upper surface of the intermediate ring 15 is tightly attached to the placement seat 5 when not subjected to downward pressure, the lower surface of the intermediate ring 15 is tightly attached to the bottom disc 14, so that the intermediate ring 15 is kept sealed with the bottom disc 14, the water leakage straight groove 34 is arranged through the side of the intermediate ring 15 and the bottom disc 14, waste liquid is discharged from the water leakage straight groove 34 after the intermediate ring 15 and the bottom disc 14 are separated from the placement seat 5, the liquid storage groove 18 is fixedly arranged inside the support frame 6 and located below the water leakage straight groove 34, the metal corrosion liquid is injected into the liquid injection pipe 28, and the surrounding baffle is fixedly arranged above the placement seat 5, so as to prevent the corrosion liquid from splashing.

[0034] Referring to Figure 4, the upper surface of the bottom disc 14 is located in the middle ring 15 and is provided with a groove bottom 7, the middle ring 15 is provided with a plurality of spring grooves 16 in a circumferential array, the spring grooves 16 are slidably provided with telescopic rods 17 penetrating the inner side of the spring grooves 16, the telescopic rods 17 are fixedly provided with pressing blocks 37 at one end outside the spring grooves 16, the telescopic rods 17 are fixedly provided with supporting springs 30 at one end inside the spring grooves 16, the surfaces of the pressing blocks 37 and the groove bottom 7 are friction surfaces, the pressing blocks 37 are supported on the side wall of the silicon carbide crystal, and the supporting springs 30 are tightly pressed, so that the silicon carbide crystal in the placing seat 5 is fixed.

[0035] Referring to Figure 4 , the bottom of the middle ring 15 is fixedly provided with a circumferential array of hook rods 31, the upper surface of the bottom disc 14 is provided with a third clamping groove 32 corresponding to the hook rods 31, the hook rods 31 are inserted into the third clamping groove 32 and extend on one side of the bottom, and the extended supports are fixedly provided with third springs 33, the third springs 33 are tension springs, the third springs 33 are fixedly connected with the upper wall of the third clamping groove, when the second spring 29 is pressed and does not provide upward force, the third spring 33 is contracted, the hook rod 31 is lifted, the middle ring 15 is lifted, the hook rod 31 is tightly connected with the bottom disc 14 at the position penetrating into the third clamping groove 32, the telescopic rod 17 is tightly connected with the middle ring 15 at the position penetrating out of the spring groove 16, and the liquid is prevented from entering the third clamping groove 32 and the spring groove 16.

[0036] Referring to Figure 5 , the upper surface of the middle ring 15 outside the placing seat 5 is provided with a brush clamping groove 35, the position of the brush clamping groove 35 is opposite to the mounting ring 26, and the size of the brush clamping groove 35 satisfies that the mounting ring 26 is pressed into the brush clamping groove 35, the cleaning brush 11 is bent and directed upward by the inner wall of the brush clamping groove 35 when the mounting ring 26 is pressed into the brush clamping groove 35, and the cleaning brush 11 directed to the silicon carbide wafer is bent upward.

[0037] Referring to Figures 1-2 , the base 1 is provided with a control button and is connected with the driving seat 3 and the circuit signal of the motor 9, the motor 9 has two working states of fast and slow, the driving seat 3 has two pressing states, and the cleaning brush 11 is located on the back metal layer of the silicon carbide wafer and the grinding wheel 12 is pressed on the silicon carbide wafer 38, respectively.

[0038] The silicon carbide wafer growth back depositing device has the advantages of simple structure, high cleaning speed, and is suitable for popularization.

[0039] Specifically, in use, referring to Figures 1-5When the silicon carbide wafer is placed at the bottom 7 of the groove, the four pressing blocks 37 press the silicon carbide wafer of different sizes by extruding the four pressing blocks 37, and the support spring 30 is compressed, the four pressing blocks 37 press the side edges of the silicon carbide wafer of different sizes, and the silicon carbide wafer is fixed, the liquid injection pipe 28 injects the etching liquid into the placement seat 5, at this time the drive seat 3 drives the rotating disc 10 to descend, when the cleaning brush 11 descends to the metal layer of the silicon carbide wafer, the motor drives the cleaning brush 11 to rotate around the silicon carbide wafer, the cleaning brush 11 sweeps the etched metal downward to speed up the etching speed, and after the etching is completed, the rotating disc 10 continues to press down, at this time the mounting ring 26 of the cleaning brush 11 is pressed into the brush clamping groove 35, the cleaning brush 11 of the silicon carbide wafer is bent upward, so that the abrasive wheel 12 is not affected by the cleaning brush 11 when grinding the residual deposits on the silicon carbide wafer, and the extension frame 25 connected with the cleaning brush 11 is separated from the side clamping groove 23, so that the cleaning brush 11 does not rotate with the rotating disc 10;

[0040] After the metal layer is etched, the abrasive wheel 12 is pressed onto the silicon carbide wafer, the silicon carbide wafer is pressed, the bottom disc 14 is pressed, the support force of the middle ring 15 is reduced, the middle ring 15 is lowered, and the upper part is separated from the placement seat 5 to form a gap for the waste liquid to pass through, the third clamping groove 32 on the bottom disc 14 is lowered, the third spring 33 inside is a tension spring, the third spring 33 is contracted, the hook rod 31 is lifted, the middle ring 15 is lifted, the lower part of the middle ring 15 is separated from the bottom disc 14 to form a gap for the waste liquid to pass through, and the waste liquid passes through the gap and leaks into the storage tank 18 from the water leakage straight groove 34. In this way, the waste liquid is discharged from the placement seat 5, and the abrasive wheel 12 grinds and cleans the residual deposits on the silicon carbide wafer.

[0041] The above only describes the preferred embodiments of the present application and is not used to limit the present application, although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent replacement of part of the technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A device for removing backside deposits during silicon carbide wafer growth, comprising a base (1), a carrier disk (2) fixedly disposed above the base (1), and a drive seat (3) fixedly disposed behind the base (1), characterized in that, The tray (2) is equipped with a placement seat (5) in the middle through a support column (13) and a multi-layer connection mechanism. The tray (2) is fixedly provided with a support frame (6) on both sides of the placement seat (5). An injection tube (28) is installed inside the support frame (6). The opening of the injection tube (28) is located on the side wall of the placement seat (5). The drive seat (3) is located on one side of the carrier plate (2) and is provided with a lifting frame (4). The lifting frame (4) is fixed with a motor (9) by a fixing ring (8). The output end of the motor (9) is equipped with a rotating disk (10) through a rotating column (19). The rotating disk (10) is opposite to the placement seat (5). The bottom of the rotating disk (10) is fixed with a grinding wheel (12). The side of the rotating disk (10) is equipped with cleaning bristles (11) that circulate inward through a lifting mechanism. The rotating disk (10) has a symmetrical first clamping groove (20) on its side. The rotating disk (10) is surrounded by an upper lifting ring (22). The inner wall of the upper lifting ring (22) is stuck in the first clamping groove (20), and its upper surface is fixedly connected to a first spring (21) located in the first clamping groove (20). The rotating disk (10) is surrounded by a lower lifting ring (24) on the upper lifting ring (22). The rotating disk (10) is provided with a symmetrical side clamping groove (23) below the lower lifting ring (24). An extension frame (25) is fixedly provided below the lower lifting ring (24) at the side clamping groove (23). The extension frame (25) is slidably connected to the side clamping groove (23). The extension frame (25) is located below the side clamping groove (23) to form a support that extends outward and then downward. An installation ring (26) is fixedly provided at the lower end of the extension frame (25). The cleaning brush bristles (11) are fixed to the inner wall of the installation ring (26). A bottom plate (14) is provided above the support column (13). The support column (13) is inserted into the bottom plate (14). The bottom plate (14) has a second clamping groove (27) arranged in a circular array at the support column (13). The support column (13) is fixedly provided with a support block (36) inserted into the second clamping groove (27) at the second clamping groove (27). A second spring (29) located in the second clamping groove (27) is fixedly connected to the upper surface of the support block (36). An intermediate ring (15) is placed at the upper edge of the bottom plate (14). The upper surface of the intermediate ring (15) is attached to the placement seat (5). The middle ring (15) is provided with a brush slot (35) on the upper surface outside the placement seat (5). The position of the brush slot (35) is opposite to the mounting ring (26), and its size is such that when the mounting ring (26) is pressed in, the cleaning bristles (11) are bent by the inner wall of the brush slot (35) and face upward.

2. The apparatus for removing backside deposits during silicon carbide wafer growth according to claim 1, characterized in that, The upper surface of the bottom plate (14) is provided with a groove bottom (7) inside the middle ring (15). The middle ring (15) is provided with a plurality of spring grooves (16) arranged in a circular array. A telescopic rod (17) that passes through the inner side of the spring groove (16) is slidably provided in the spring groove (16). A pressing block (37) is fixedly provided at one end of the telescopic rod (17) located outside the spring groove (16). A support spring (30) is fixedly provided at one end of the telescopic rod (17) located inside the spring groove (16). The surfaces of the pressing block (37) and the groove bottom (7) are both friction surfaces.

3. The apparatus for removing backside deposits during silicon carbide wafer growth according to claim 2, characterized in that, The upper surface of the intermediate ring (15) is in close contact with the placement seat (5) when it is not under downward pressure, and its lower surface is in close contact with the bottom plate (14). The intermediate ring (15) and the bottom plate (14) are provided with a through-flow straight drainage groove (34). The inner side of the support frame (6) is fixedly provided with a liquid storage tank (18) located below the straight drainage groove (34). The injection pipe (28) is injected with metal corrosion liquid. The placement seat (5) is fixedly provided with a surrounding baffle.

4. The apparatus for removing backside deposits during silicon carbide wafer growth according to claim 3, characterized in that, The bottom of the intermediate ring (15) is fixed with a circular array of hook rods (31). The upper surface of the bottom plate (14) is provided with a third clamping groove (32) corresponding to the hook rods (31). The hook rods (31) are inserted into the third clamping groove (32) and extend to one side of the bottom. A third spring (33) is fixed at the support of the extension. The third spring (33) is fixedly connected to the upper wall of the third clamping groove. The hook rods (31) are located at the point where they penetrate into the third clamping groove (32) and are tightly connected to the bottom plate (14). The telescopic rod (17) is located at the point where it penetrates out of the spring groove (16) and is tightly connected to the intermediate ring (15).

5. The apparatus for removing backside deposits during silicon carbide wafer growth according to claim 1, characterized in that, The base (1) is equipped with a control button and is connected to the circuit signals of the drive seat (3) and the motor (9). The motor (9) has two working states: fast and slow. The drive seat (3) has two pressing states: the cleaning brush (11) is located on the metal layer on the back of the silicon carbide wafer and the abrasive wheel (12) is pressed on the silicon carbide wafer (38) and separates the placement seat (5), the bottom plate (14), and the middle ring (15).

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