Pressure sensing module, pressure sensor and electronic equipment

Abstract

The present invention provides a pressure sensing module, a pressure sensor, and an electronic device, relating to the field of micro-electromechanical technology, and is used to reduce the impact of external electromagnetic interference on the performance of piezoresistors, thereby improving the accuracy of the pressure sensor. The pressure sensing module includes: a first substrate structure, a second substrate structure, and a welding ring; the first substrate structure includes a pressure-sensitive film and a plurality of piezoresistors disposed on one side of the pressure-sensitive film; the plurality of piezoresistors are electrically connected to each other; the second substrate structure is located on one side of the first substrate structure and is connected to the first substrate structure; the welding ring is located between the first and second substrate structures, connecting the first and second substrate structures; the welding ring, the first and second substrate structures form a first cavity, the pressure-sensitive film and the plurality of piezoresistors are located in the first cavity; the welding ring is grounded via a first grounding component.

Description

Technical Field

[0001] The present application relates to the field of micro-electronic machinery technology, and in particular to a pressure sensing module, a pressure sensor, and an electronic device. Background Art

[0002] Micro-Electro-Mechanical System (MEMS) pressure sensors are miniature devices with pressure detection capabilities, manufactured using MEMS technology. They are primarily classified into three types: piezoresistive, capacitive, and resonant. They are used in consumer electronics, industrial production, and other fields. Piezoresistive MEMS pressure sensors are widely used due to their advantages, such as small size, light weight, simple structure, low cost, and high measurement accuracy.

[0003] Existing pressure sensors only provide electromagnetic shielding for a limited area, but not for the entire device structure. Furthermore, some existing pressure sensors require additional processing steps to create the shielding structure, which increases costs. Summary of the Invention

[0004] The embodiments of the present application provide a pressure sensing module, a pressure sensor, and an electronic device. The pressure sensor is used to reduce the impact of external electromagnetic environment interference on the performance of the piezoresistor, thereby improving the accuracy of the pressure sensor.

[0005] In a first aspect, the present application provides a pressure sensing module. The pressure sensing module includes: a first substrate structure, a second substrate structure, and a welding ring; the first substrate structure includes a pressure-sensitive film and a plurality of pressure-sensitive resistors disposed on one side of the pressure-sensitive film; the plurality of pressure-sensitive resistors are electrically connected to each other; a second substrate structure is located on one side of the first substrate structure and is connected to the first substrate structure; the welding ring is located between the first substrate structure and the second substrate structure, and the welding ring connects the first substrate structure and the second substrate structure; the welding ring, the first substrate structure, and the second substrate structure form a first cavity, the pressure-sensitive film and the plurality of pressure-sensitive resistors are located in the first cavity; the welding ring is grounded through the first grounding component.

[0006] Some embodiments of the present application provide a pressure sensor that grounds the solder ring. This eliminates the need for additional process steps to create a shielding structure and reduces costs. The sensor can also reduce the impact of external electromagnetic interference on the performance of the varistor, thereby improving the accuracy of the pressure sensor and providing electromagnetic shielding for the device structure. Furthermore, a unique wafer-level solder vacuum sealing technology is employed. The solder ring has a certain height that automatically forms a vacuum cavity, eliminating the need for cavity etching and simplifying the process. Furthermore, because eutectic bonding is primarily made of silicon material, the bonding and packaging stress is less than that of anodic bonding, resulting in a pressure sensing module with improved accuracy.

[0007] In some embodiments, the second substrate structure includes: a second liner; the welding ring is located on the side of the second liner close to the first surface of the first substrate structure; the first grounding component includes: a first grounding pad located on the first surface of the second liner; the first grounding pad is grounded; a grounding trace located on the first surface of the second liner, the welding ring is connected to one end point of the grounding trace, and the other end of the grounding trace is electrically connected to the first grounding pad.

[0008] In some embodiments, a surface of the second substrate structure away from the first substrate structure is grounded via a third grounding component, and / or a surface of the first substrate structure away from the second substrate structure is grounded via a second grounding component.

[0009] In some embodiments, the first substrate structure further includes: a first liner, the first liner includes a first surface and a second surface relative to each other, the first surface of the first liner is away from the second substrate structure, the first surface of the first liner has a groove recessed toward the second substrate structure, and the bottom of the groove is the pressure-sensitive film; a buried oxide layer, arranged on the second surface of the first liner; the varistor is arranged on the surface of the buried oxide layer away from the first liner; the pressure-sensitive film is in contact with the buried oxide layer; wherein, the second grounding component includes a second grounding pad, arranged on the first surface of the first liner; the second grounding pad is grounded.

[0010] In some embodiments, the first substrate structure further includes: a first liner, the first liner includes a first surface and a second surface relative to each other, the first surface of the first liner is away from the second substrate structure, the first surface of the first liner has a groove recessed toward the second substrate structure, and the bottom of the groove is the pressure-sensitive film; a buried oxide layer, arranged on the second surface of the first liner; the varistor is arranged on the surface of the buried oxide layer away from the first liner; the pressure-sensitive film is in contact with the buried oxide layer; wherein, the second grounding component includes a lead, and the first surface of the first liner is grounded through the lead.

[0011] In some embodiments, the third grounding component includes: conductive glue; the second substrate structure includes: a second lining; the conductive glue is arranged on the surface of the second lining away from the first substrate structure, and the conductive glue is grounded.

[0012] In some embodiments, the second substrate structure includes a plurality of first metal lines electrically connected to the plurality of varistors so as to couple the plurality of varistors to each other; and at least one of the first metal lines is electrically connected to a readout integrated circuit.

[0013] In some embodiments, the first substrate structure further includes: a plurality of first conductive bump groups; the first conductive bump group includes two first conductive bumps, and the first conductive bump group is electrically connected to the varistor; the second substrate structure further includes: a plurality of second conductive bump groups, the second conductive bump group includes two second conductive bumps, the first end of the first metal wire is electrically connected to a second conductive bump of one second conductive bump group, and the second end of the first metal wire is electrically connected to a second conductive bump of another second conductive bump group; the plurality of second conductive bump groups are correspondingly connected to the plurality of first conductive bump groups, and the plurality of varistors, the plurality of first conductive bump groups, the plurality of second conductive bump groups and the plurality of first metal wires form a loop.

[0014] In some embodiments, the second substrate structure further includes: at least one third conductive bump; the third conductive bump is electrically connected to the middle end of the first metal wire, and the middle end of the first metal wire is located between the first end and the second end of the first metal wire; the multiple first conductive bumps, the multiple second conductive bumps, the at least one third conductive bump, the multiple first metal wires and the multiple varistors form a ring-shaped Wheatstone bridge structure.

[0015] In some embodiments, the at least one third conductive bump includes: a third input conductive bump; the third input conductive bump serves as an input end of the Wheatstone bridge structure.

[0016] In some embodiments, the plurality of third conductive bumps include: a plurality of third output conductive bumps; the third output conductive bumps serve as output ends of the Wheatstone bridge structure.

[0017] In some embodiments, the at least one third conductive bump includes: a third grounding conductive bump; the third grounding conductive bump serves as a grounding end of the Wheatstone bridge structure.

[0018] In some embodiments, the first substrate structure further includes: a plurality of first conductive bump groups; the second substrate structure further includes a plurality of second conductive bump groups and at least one third conductive bump; the orthographic projections of the plurality of first conductive bump groups, the plurality of first conductive bump groups, and the plurality of varistors on the plane where the second substrate structure is located are located within an area enclosed by the orthographic projection of the solder ring on the plane where the second substrate structure is located, and the orthographic projection of the at least one third conductive bump on the plane where the second substrate structure is located is located outside the orthographic projection of the solder ring on the plane where the second substrate structure is located.

[0019] In some embodiments, the second substrate structure further includes: a second liner and a first insulating layer; the first metal wire is located on a side of the second liner close to the first substrate structure; the solder ring is arranged on a side of the first metal wire away from the second liner; the first insulating layer is located between the first metal wire and the solder ring, and the solder ring is in contact with the surface of the first insulating layer and the second insulating layer on the surface of the second liner.

[0020] In some embodiments, the first substrate structure and the second substrate structure enclose a vacuum cavity; and the plurality of piezoresistors are located inside the vacuum cavity.

[0021] In some embodiments, when the first substrate structure and the second substrate structure are combined to form a vacuum cavity, the pressure sensing module further includes a getter sheet located in the vacuum cavity.

[0022] In a second aspect, some embodiments of the present application provide a pressure sensor, comprising: the above-mentioned pressure sensing module and a readout integrated circuit; the readout integrated circuit is electrically connected to the plurality of third conductive bumps.

[0023] The beneficial effects that can be achieved by the pressure sensors provided in some embodiments of the present application are the same as the beneficial effects that can be achieved by the pressure sensing module provided by the above technical solution, and will not be repeated here.

[0024] In a third aspect, some embodiments of the present application provide an electronic device, which includes a housing and a pressure sensor disposed on the housing.

[0025] The beneficial effects that can be achieved by the electronic devices provided by some embodiments of the present application are the same as the beneficial effects that can be achieved by the pressure sensing module provided by the above technical solution, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings described herein are used to provide a further understanding of the embodiments of the present disclosure and constitute a part of the embodiments of the present disclosure. The exemplary embodiments of the present disclosure and their descriptions are used to explain the present disclosure and do not constitute an improper limitation of the present disclosure. In the drawings:

[0027] Figure 1 A structural diagram of a pressure sensor provided in some embodiments of the present disclosure;

[0028] Figure 2 A bottom view of a first substrate structure provided for some embodiments of the present disclosure;

[0029] Figure 3 A side view of a first substrate structure provided for some embodiments of the present disclosure;

[0030] Figure 4 A top view of a second substrate structure provided for some embodiments of the present disclosure;

[0031] Figure 5 Some embodiments of the present disclosure provide a Figure 4 Enlarged view of the middle region O;

[0032] Figure 6 A cross-sectional view of a portion of a second substrate structure provided for some embodiments of the present disclosure;

[0033] Figure 7 A cross-sectional view of a pressure sensor provided for some embodiments of the present disclosure;

[0034] Figure 8 A cross-sectional view of another pressure sensor provided for some embodiments of the present disclosure;

[0035] Figure 9 A structural diagram of a pressure sensing device provided in some embodiments of the present disclosure;

[0036] Figure 10 A structural diagram of an electronic device provided for some embodiments of the present disclosure. DETAILED DESCRIPTION

[0037] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the embodiments described are only some embodiments of the present application, not all embodiments. Based on the embodiments provided in this application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0038] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as having an open, inclusive meaning, that is, "including, but not limited to." In the description of the specification, the terms "one embodiment," "some embodiments," "exemplary embodiments," "examples," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0039] Micro-Electro-Mechanical System (MEMS) pressure sensors are miniature devices with pressure detection capabilities, manufactured using MEMS technology. They are primarily classified into three types: piezoresistive, capacitive, and resonant. They are used in consumer electronics, industrial production, and other fields. Piezoresistive MEMS pressure sensors are widely used due to their advantages, such as small size, light weight, simple structure, low cost, and high measurement accuracy.

[0040] A piezoresistive MEMS pressure sensor consists of a pressure-sensitive membrane (also called a strain-sensitive membrane), a piezoresistor, and an electrically connected circuit structure. The operating principle of a piezoresistive MEMS pressure sensor is as follows: a piezoresistor is formed on the strain-sensitive membrane. The strain-sensitive membrane deforms under external pressure, generating stress. The stress causes the piezoresistor to change in resistance. Finally, an interconnected structure (such as a Wheatstone bridge) converts this resistance change into a voltage output. Therefore, the voltage output reflects the magnitude of the external pressure.

[0041] In some embodiments, the substrate device includes at least two vertically stacked and electrically connected TSV conductive structures, wherein at least one of the TSV conductive structures, in addition to having a substrate and a TSV conductive hole penetrating the substrate, also includes a substrate grounding terminal arranged on the first surface of the corresponding substrate, a first dielectric layer formed on the first surface of the substrate, and a grounding ring arranged corresponding to at least one of the TSV conductive holes, the grounding ring at least surrounds a portion of the corresponding TSV conductive hole located in the first dielectric layer, and the grounding ring is grounded through the substrate grounding terminal.

[0042] Ground rings shield the surrounding TSV transmission lines from electrical interference with surrounding structures and circuits, thereby improving integrated circuit performance. However, ground rings can only provide electromagnetic shielding for the transmission lines within the TSVs, not for the entire device structure.

[0043] In other words, existing pressure sensors only provide electromagnetic shielding for a portion of their area, but are unable to provide electromagnetic shielding for the entire device structure. Furthermore, some existing pressure sensors require additional process steps to fabricate the shielding structure, which increases costs.

[0044] Through-Silicon Via (TSV) technology is a key technology in 3D integrated circuit design. It creates vertical conductive channels between micro-ICs and wafers to achieve electrical interconnection. The primary goal of this technology is to significantly improve the performance of micro-ICs and address the issue of Moore's Law failing. TSV technology enables vertical conduction between wafers and between micro-ICs, enabling wafer and micro-IC stacking.

[0045] Based on this, some embodiments of the present application provide a pressure sensing module. Figure 1 As shown, the pressure sensing module 100 includes: a first substrate structure 10, a second substrate structure 20 and a welding ring 30 (refer to Figure 6 ).

[0046] The first substrate structure 10 includes a pressure-sensitive film 11 and a plurality of varistors 12 disposed on one side of the pressure-sensitive film 11 .

[0047] The second substrate structure 20 is located on one side of the first substrate structure 10 and is connected to the first substrate structure 10. The second substrate 20 structure includes a plurality of first metal lines 21. The plurality of first metal lines 21 are electrically connected to the plurality of varistors 12, thereby electrically connecting the plurality of varistors 12 to each other. At least one first metal line 21 is electrically connected to the readout integrated circuit.

[0048] The solder ring 30 is located between the first substrate structure 10 and the second substrate structure 20 , and the solder ring 30 connects the first substrate structure 10 and the second substrate structure 20 .

[0049] The welding ring 30, the first substrate structure 10 and the second substrate structure 20 form a first cavity N (refer to Figure 7 ), the pressure-sensitive film 11 and multiple pressure-sensitive resistors 12 are located in the first cavity; the welding ring 30 is grounded through the first grounding component.

[0050] In some embodiments, the first grounding component is a grounding pad or a grounding lead.

[0051] In some embodiments, the first cavity N may be a sealed cavity or a vacuum cavity.

[0052] Among them, the multiple varistors 12 included in the first substrate structure 10 are not connected to each other on the first substrate structure 10. The multiple varistors 12 are electrically connected to the multiple first metal wires 21. The varistors and the first metal wires are alternately electrically connected, so that the multiple varistors 12 can be connected in series in sequence and connected end to end to form a ring circuit.

[0053] For example, the first substrate structure 10 includes four varistors 12 , which are sequentially connected in series and connected end to end to form a ring circuit.

[0054] Among them, the four piezoresistors 12 are located at the center positions of the four edges of the piezoresistive film 11 (refer to Figure 2 ), the four resistor film margins remain consistent and the resistor film edge distance L0 is a value between 0-20um, the width of the four varistors 12 is the same as the total length, and the fold number can be 1-10 folds, wherein the upper and lower varistors have the same structural dimensions, and the left and right varistors have the same structural dimensions.

[0055] In some embodiments, the varistor 12 may be a doped silicon varistor, such as a P-type doped silicon varistor or an N-type doped silicon varistor; in other examples, the varistor 12 may be a metal film varistor, and the material of the metal film may be a material with a high piezoresistive strain coefficient, a low material noise factor, and a low resistance temperature coefficient, such as any one or more combinations of NiCr, Pt, FeNi, TiB, TaN, and TiN.

[0056] Exemplarily, the material of the first metal wire 21 may be a low resistivity material, such as any one or more combinations of Al, Ti / Al, Au, and Cr / Au, so that a good circuit path can be formed.

[0057] In some embodiments, the first metal wire 21 may be located on the second substrate structure 20 or on the first substrate structure 10 , and may also form a Wheatstone bridge on the first substrate structure 10 .

[0058] Electromagnetic shielding can indeed be achieved through grounding. Shield grounding is a permanent and good electrical connection made between the shield and the ground or the metal shell of the interference source in order to prevent electromagnetic interference.

[0059] Some embodiments of the present application provide a pressure sensor that grounds the solder ring. This eliminates the need for additional process steps to create a shielding structure and reduces costs. The sensor can also reduce the impact of external electromagnetic interference on the performance of the varistor, thereby improving the accuracy of the pressure sensor and providing electromagnetic shielding for the device structure. Furthermore, a unique wafer-level solder vacuum sealing technology is employed. The solder ring has a certain height that automatically forms a vacuum cavity, eliminating the need for cavity etching and simplifying the process. Furthermore, because eutectic bonding is primarily made of silicon material, the bonding and packaging stress is less than that of anodic bonding, resulting in a pressure sensing module with improved accuracy.

[0060] like Figure 1 and Figure 6As shown, the second substrate structure 20 includes: a second substrate 25, a first ground pad 27 located on a first surface of the second substrate, and a ground trace located on the first surface of the second substrate.

[0061] With reference to the above-mentioned first grounding component, it can be known that the first grounding component includes: a first grounding pad 27 and a grounding trace located on the first surface of the second substrate.

[0062] The solder ring 30 is located on the side of the second substrate 25 close to the first surface of the first substrate structure 10; the first ground pad is grounded; the solder ring is electrically connected to one end of the ground trace, and the other end of the ground trace is electrically connected to the first ground pad 27.

[0063] A surface of the second substrate structure away from the first substrate structure is grounded via the third grounding component, and / or a surface of the first substrate structure away from the second substrate structure is grounded via the second grounding component.

[0064] That is to say, the second substrate structure must be grounded, the first substrate structure must also be grounded, and the welding ring must also be grounded, so that the entire pressure sensing module is grounded.

[0065] The emphasis on surface grounding here is to illustrate that the outer surface of the entire pressure sensing module is grounded, forming a full shield for the internal varistor.

[0066] In some embodiments, the third grounding component includes: conductive glue; the conductive glue is disposed on the second surface of the second liner, and the conductive glue is grounded.

[0067] The welding ring may be directly grounded, or may be grounded by connecting to the first ground pad.

[0068] like Figure 6 and Figure 7 As shown, the second substrate structure 20 also includes: a first insulating layer 26; a plurality of first metal wires 21 are located on a side of the second liner 25 close to the first substrate structure 10; a welding ring 30 is arranged on a side of the plurality of first metal wires 21 away from the second liner 25; the first insulating layer 26 is located between the first metal wires 21 and the welding ring 30, and the welding ring 30 is in contact with the surface of the first insulating layer 26 and the surface of the second liner 25.

[0069] The first insulating layer 26 is used to isolate the electrical connection between the first metal trace and the solder ring 30 .

[0070] In some embodiments, the second liner 25 is a second insulating layer 252. The second insulating layer is used to prevent the first metal wire from contacting a conductor and preventing the first metal wire from leaking electricity.

[0071] In some embodiments, the second liner 25 comprises a substrate silicon wafer 251 and a second insulating layer 252. The second insulating layer is located on a side of the silicon wafer close to the first substrate structure. The solder ring 30 contacts the surface of the first insulating layer 26 and the second insulating layer 252 on the surface of the second liner 25.

[0072] The substrate silicon wafer is a conductor, and the second insulating layer is used to isolate the first metal wire from the substrate silicon wafer.

[0073] It should be noted that the substrate silicon wafer of the second substrate structure can be placed on the conductive adhesive, and the conductive adhesive is grounded, thereby achieving grounding of the second substrate structure. The conductive adhesive also serves to fix the pressure sensing module.

[0074] In some embodiments, the first grounding pad 27 can be arranged on the punched second insulating layer 252, that is, the substrate silicon wafer of the second substrate structure is not arranged on the conductive glue, but a hole is punched on the second insulating layer 252, and the first grounding pad 27 is arranged in the hole punched in the second insulating layer 252 (there is no insulating layer in the hole), thereby realizing grounding of the second substrate structure.

[0075] In summary, when there is conductive glue between the substrate silicon wafer and the ground (a structure connected to the earth, such as the shell where the pressure sensor module is located), the substrate silicon wafer is connected to the conductive glue, and the conductive glue is connected to the ground; the substrate silicon wafer and the conductive glue together form an electromagnetic shielding structure, which plays the role of electromagnetic shielding.

[0076] In order to fix the pressure sensing module, other colloids can be set between the substrate silicon wafer and the ground (a structure connected to the earth, such as the shell where the pressure sensing module is located). The colloid is a non-conductive colloid. In this case, the substrate silicon wafer is connected to the first grounding pad, the first grounding pad is connected to the lead, and the lead is grounded; the substrate silicon wafer, the lead and the first grounding pad together form an electromagnetic shielding structure, which plays the role of electromagnetic shielding.

[0077] It's important to note that grounding in a circuit refers to connecting a portion of a power system or electrical device to the earth via a grounding wire for safety purposes. This practice primarily prevents harm from leakage. By directing the charge from potentially charged metal casings to the earth, it prevents electric shock accidents from people touching the charged parts. Grounding wires also provide lightning protection, safety protection, and electromagnetic shielding.

[0078] It should be noted that Figure 6 yes Figure 4 The cross-sectional view obtained by splitting the cross-sectional line X1 in the figure.

[0079] Reference Figure 4The first substrate structure 10 also includes: a first liner 15 and a buried oxide layer 16; the middle part of the first liner 15 is thinned to form a pressure-sensitive film; the buried oxide layer 16 is arranged on the surface of the first liner close to the second substrate structure; the varistor is arranged on the surface of the buried oxide layer away from the first liner; the pressure-sensitive film is in contact with the buried oxide layer; and the welding ring is in contact with the surface of the buried oxide layer.

[0080] In some embodiments, the first liner 15 is an SOI substrate layer. The SOI substrate layer can be etched to the buried oxide layer to form a cavity, or a portion of the substrate layer can be etched to form a cavity, and a pressure-sensitive film can be formed inside the cavity. Figure 2 The cavity is a square cavity, and the side length of the cavity can be L2: 500-2000 μm. The first surface of the first substrate is grounded through a lead.

[0081] That is, the first liner 15 includes a first surface and a second surface opposite to each other. The first surface of the first liner 15 is away from the second substrate structure. The first surface of the first liner 15 has a groove recessed toward the second substrate structure. The bottom of the groove is a pressure-sensitive film.

[0082] In some embodiments, the first substrate structure further includes a second grounding pad 17 , which is a second grounding component; that is, the surface of the first substrate structure away from the second substrate structure is grounded via the second grounding pad 17 .

[0083] The second ground pad 17 is disposed on the first surface of the first substrate 15 ; the second ground pad 17 is grounded.

[0084] In some embodiments, the first surface of the first substrate is grounded via a lead, and the lead is a silicon aluminum wire.

[0085] Among them, the first lining 15 in the first substrate structure is connected to the second ground pad 17, and the second ground pad 17 is connected to the lead; the first lining 15, the second ground pad 17 and the lead in the first substrate structure together form an electromagnetic shielding structure, which plays the role of electromagnetic shielding.

[0086] When the second substrate structure is grounded, the first substrate structure is grounded, and the welding ring is grounded, the entire pressure sensing module can be grounded.

[0087] For example, the first liner 15 may be made of silicon. The buried oxide layer 16 may be made of an insulating material, such as a combination of one or more of SiO 2 , SiN, and glass. The first liner 15 and the buried oxide layer 16 may form an SOI structure.

[0088] For example, Figure 2As shown, the size of the first liner 15 is consistent with the size of the buried oxide layer 16, and the distance L3 between the outer boundary of the solder ring 30 and the boundary of the buried oxide layer 16 is greater than or equal to 50μm, for example, 50μm, 60μm, 70μm, 75μm, 80μm or 90μm, etc. In this way, the material of the solder ring 30 can be prevented from flowing to the outside of the surface of the buried oxide layer 16 away from the first liner 15 during the packaging process.

[0089] To summarize, some embodiments of the present application provide a pressure sensor, which grounds the welding ring, the first grounding pad, and the second grounding pad. The piezoresistor is located inside the fully shielded vacuum cavity formed, and is shielded by the sensor's own structure. There is no need to add a new shielding structure, and the structure and process are simple.

[0090] Not only does it not require additional process steps to produce the shielding structure, it also does not reduce costs. It can reduce the impact of external electromagnetic environment interference on the performance of the varistor, thereby improving the accuracy of the pressure sensor, and thus electromagnetically shielding the overall structure of the device.

[0091] At the same time, a unique wafer-level solder vacuum sealing technology is adopted. The welding ring has a certain height to automatically form a vacuum cavity, which simplifies the process by eliminating the need to etch the cavity. In addition, since eutectic bonding is basically made of silicon material, the bonding packaging stress is less than that of anodic bonding, and the pressure sensing module has better accuracy.

[0092] like Figure 3 As shown, the first substrate structure 10 further includes: a plurality of first conductive bump groups 13 ; the first conductive bump group 13 includes two first conductive bumps 131 , and the first conductive bump group 13 is electrically connected to the varistor 12 .

[0093] For example, one end of the varistor 12 is electrically connected to one first conductive bump 131 , and the other end of the varistor 12 is electrically connected to another first conductive bump 131 .

[0094] The first conductive bump group 13 and the varistor 12 are electrically connected via a second metal wire 14. The second metal wire 14 laterally connects the varistor 12 and the first conductive bump group 13. The second metal wire 14 is less than 50 μm long and less than 15 μm wide.

[0095] Optionally, the first metal trace 3 may be made of a low resistivity material such as Al, Ti / Al, Au, or Cr / Au to form a good circuit path.

[0096] The second substrate structure 20 also includes: multiple second conductive bump groups 23, the second conductive bump group 23 includes two second conductive bumps 231, the first end of the first metal wire 21 is electrically connected to a second conductive bump 231 of one second conductive bump group 23, and the second end of the first metal wire 21 is electrically connected to a second conductive bump 231 of another second conductive bump group 23.

[0097] The plurality of second conductive bump groups 23 are connected to the plurality of first conductive bump groups 13 correspondingly, and the plurality of varistors 12 , the plurality of first conductive bump groups 13 , the plurality of second conductive bump groups 23 and the plurality of first metal wires 21 form a loop.

[0098] For example, the first bumps and the second bumps are connected correspondingly, that is, the two first bumps of a first bump group are in contact with the two second bumps of a second bump group at corresponding positions, thereby achieving electrical connection.

[0099] Among them, compared with vertical interconnection through-hole technology, bump technology and substrate wafer lateral routing have simple processes and high yields.

[0100] In some embodiments, the second substrate structure 20 further includes at least one third conductive bump 24 .

[0101] Reference Figure 1 and Figure 3 The third conductive bump 24 is electrically connected to the middle end of the first metal wire 21, and the middle end of the first metal wire 21 is located between the first end and the second end of the first metal wire; multiple first conductive bump groups 13, multiple second conductive bump groups 23, at least one third conductive bump 24, multiple first metal wires 21 and multiple varistors 12 form a ring-shaped Wheatstone bridge structure.

[0102] That is, the ring structure composed of the plurality of first conductive bump groups 13 , the plurality of second conductive bump groups 23 , the at least one third conductive bump 24 , the plurality of first metal wires 21 and the plurality of varistors 12 can be equivalent to a Wheatstone bridge structure.

[0103] It should be noted that the first conductive bump group 13 is located outside the varistor 11 and is adjacent to the corresponding varistor 12. The first conductive bumps can be square, rectangular, circular, elliptical, etc., and the side length or diameter L1 of the first conductive bump is 50-100 um.

[0104] Similarly, the second conductive bump group 23 corresponds to the first conductive bump group 13 . The second conductive bumps can be square, rectangular, circular, elliptical, etc., and the side length or diameter L1 ′ of the second conductive bump is 50-100 μm.

[0105] Optionally, the material of the first conductive bump group 13 may be Au, AuSn, AgSn, CuSn, SnAgCu, etc.

[0106] Optionally, the material of the second conductive bump group 23 may be Au, AuSn, AgSn, CuSn, SnAgCu, etc.

[0107] like Figure 3 As shown, at least one third conductive bump 24 includes: a third input conductive bump 241; the third input conductive bump serves as the input end of the Wheatstone bridge structure; and / or, at least one third conductive bump 24 includes: a third output conductive bump 242; the third output conductive bump serves as the output end of the Wheatstone bridge structure; the third output conductive bump is electrically connected to the readout integrated circuit; and / or, at least one third conductive bump 24 includes: a third ground conductive bump 243; the third ground conductive bump serves as the ground end of the Wheatstone bridge structure.

[0108] The Wheatstone bridge structure includes: an input terminal, two output terminals and a ground terminal.

[0109] In some embodiments, the third input conductive bump 241 is a metal pad. The third input conductive bump serves as the input end of the Wheatstone bridge structure. The Wheatstone bridge structure has three terminals. The third conductive bump can continue to be used as the two output terminals and a ground terminal of the Wheatstone bridge structure. Alternatively, the third conductive bump can be directly connected to the case ground by bonding a silicon aluminum wire on the second substrate structure to achieve grounding, or directly bonded to the second substrate structure as an output terminal.

[0110] like Figure 3 As shown, the plurality of third conductive bumps include: a plurality of third output conductive bumps 242; the third output conductive bumps serve as output ends of the Wheatstone bridge structure.

[0111] In some embodiments, the third output conductive bump 242 is a metal pad. The two third output conductive bumps serve as the two output terminals of the Wheatstone bridge structure. The Wheatstone bridge structure has two terminals. The third conductive bump can continue to be used as an input terminal and a ground terminal of the Wheatstone bridge structure. Alternatively, the third conductive bump can be directly connected to the case ground by bonding a silicon aluminum wire on the second substrate structure to achieve grounding, or directly bonded to the second substrate structure as an input terminal.

[0112] like Figure 3 As shown, the at least one third conductive bump includes: a third grounding conductive bump 243 ; the third grounding conductive bump serves as a grounding end of the Wheatstone bridge structure.

[0113] In some embodiments, the third grounding conductive bump 243 is a metal pad. The third grounding conductive bump serves as the ground terminal of the Wheatstone bridge structure. The Wheatstone bridge structure has three terminals. The third conductive bump can continue to be used as two output terminals and one input terminal of the Wheatstone bridge structure. Alternatively, the third conductive bump can be used as the input terminal by directly bonding a silicon aluminum wire on the second substrate structure, or as the output terminal by directly bonding a silicon aluminum wire on the second substrate structure.

[0114] It should be noted that the two output terminals of the Wheatstone bridge structure are located at opposite corners, and the positions of the input terminal and the ground terminal are not required. Figure 3 Only one possible case is shown.

[0115] The third conductive bump 24 is located on the second substrate structure and is disposed outside the tube shell of the pressure sensing module.

[0116] When the third conductive bump 24 is a metal pad, the pad may be square, rectangular, circular, elliptical, or other shaped structures, and the side length or straight dimension L1″ of the pad may be 50-150 μm.

[0117] The orthographic projections of the multiple first conductive bump groups, the multiple second conductive bump groups, and the multiple varistors on the plane where the second substrate structure is located are located within the area enclosed by the orthographic projection of the solder ring on the plane where the second substrate structure is located, and the orthographic projection of at least one third conductive bump on the plane where the second substrate structure is located is located outside the orthographic projection of the solder ring on the plane where the second substrate structure is located.

[0118] That is, the region where the varistor is located is opposite to the region where the pressure sensitive film is located. The orthographic projections of the multiple varistors on the first substrate are located in the region where the pressure sensitive film is located. The welding ring surrounds the multiple varistors, thereby forming a sealed or vacuum structure.

[0119] The solder ring 30 is composed of a first solder ring 31 and a second solder ring 32. The first solder ring 31 is disposed on the surface of the buried oxide layer 16 away from the first substrate 15, with a distance between the varistor 12 and the plurality of first conductive bump groups 13. The second solder ring 32 is disposed on the surface of the insulating layer 252 of the first insulating layer 26 away from the surface of the second substrate 25, and matches the shape and position of the first solder ring 31. The solder ring 30 is formed by contacting and securing the first and second solder rings 31 and 32, for example, by a high-temperature melting process.

[0120] In this case, while the first solder ring 31 and the second solder ring 32 are in contact and fixed, the second conductive bump groups 23 and the first conductive bump groups 13 are in contact and fixed accordingly, thereby achieving electrical connection between the second conductive bump groups 23 and the first conductive bump groups 13 .

[0121] As a possible implementation, the thickness of the first solder ring 31 is equal to the height of the first conductive bump group 13; and the thickness of the second solder ring 32 is equal to the sum of the height of the second conductive bump group 23 and the thickness of the second insulating layer 252. This ensures the bonding strength between the first solder ring 31 and the second solder ring 32, while also ensuring the reliability of the interconnection between the second conductive bump group 23 and the first conductive bump group 13.

[0122] For example, Figure 1 and Figure 7 As shown, when the solder ring 30 is composed of a first solder ring 31 and a second solder ring 32, the thickness of the first solder ring 31 and the thickness of the second solder ring 32 can be the same or different. The thickness L4 of the first solder ring 31 can be in the range of 10 μm to 60 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, or 60 μm. The thickness L5 of the second solder ring 32 can be in the range of 10 μm to 60 μm, for example, 10 μm, 21 μm, 30 μm, 40 μm, 50 μm, or 60 μm. In this way, the packaging effect of the first substrate structure 10 and the second substrate structure 20 can be improved.

[0123] For example, Figure 7 and Figure 8 As shown, when the solder ring 30 is composed of a first solder ring 31 and a second solder ring 32, a distance L6 between the inner edge of the first solder ring 31 and the first conductive bump group 13 is greater than or equal to 50 μm, such as 50 μm, 60 μm, 74 μm, 80 μm, 90 μm, or 100 μm. This ensures that there is no electrical connection between the first solder ring 31 and the first conductive bump group 13. A distance L7 between the inner edge of the second solder ring 32 and the second conductive bump group 23 is greater than or equal to 50 μm, such as 50 μm, 60 μm, 75 μm, 82 μm, 90 μm, or 110 μm. This ensures that there is no electrical connection between the second solder ring 32 and the second conductive bump group 23.

[0124] Exemplarily, the material of the solder ring 30 may be eutectic solder, such as a combination of one or more of AuSn, AgSn, CuSn, and SnAgCu.

[0125] For example, Figure 7 As shown, the width L8 of the solder ring 30 is greater than or equal to 600 μm, such as 600 μm, 650 μm, 700 μm, 750 μm, 810 μm or 900 μm, etc. In this way, the packaging effect of the first substrate structure 10 and the second substrate structure 20 can be improved.

[0126] It should be noted that Figure 7 is Figure 4 、 Figure 5The cross-sectional view obtained by splitting the section line X2 in . Figure 5 yes Figure 4 Magnified view of area O in FIG.

[0127] The middle portion of the first liner 15 is thinned to form the pressure-sensitive film 11, and the pressure-sensitive film 11 contacts the buried oxide layer 16. As a possible implementation, a non-through cavity (e.g., a square column-shaped cavity) is provided in the middle portion of the surface of the first liner 15 away from the buried oxide layer 16, thereby thinning the middle portion of the first liner 15 to form the pressure-sensitive film 11. In this way, the pressure-sensitive film 11 and the buried oxide layer 16 in contact therewith can together constitute the pressure sensing portion of the pressure sensing module 100.

[0128] In some embodiments, the first substrate structure and the second substrate structure enclose a vacuum cavity; and the plurality of piezoresistors are located inside the vacuum cavity.

[0129] In some embodiments, when the first substrate structure and the second substrate structure are enclosed to form a vacuum cavity, the pressure sensing module further includes a getter sheet located in the vacuum cavity.

[0130] As can be understood, by including the solder ring 30 in the pressure sensing module 100, the first substrate structure 10, the second substrate structure 20, and the solder ring 30 can enclose a main cavity N. Consequently, when the pressure-sensitive film 11 senses pressure changes, it generates stress in response to the pressure and transmits the stress to the piezoresistor 12, thereby achieving the pressure measurement function. Furthermore, this improves the feasibility of packaging the first substrate structure 10 and the second substrate structure 20.

[0131] In some embodiments, as Figure 2 As shown, the first substrate structure 10 and the second substrate structure 20 enclose a vacuum cavity N1 ; a plurality of varistors 12 are located inside the vacuum cavity N1 .

[0132] For example, when the pressure sensing module 100 further includes a solder ring 30 , the first substrate structure 10 , the second substrate structure 20 , and the solder ring 30 enclose a vacuum chamber N1 .

[0133] It can be understood that the vacuum cavity N1 is the aforementioned main cavity N. Moreover, when the first substrate structure 10 and the second substrate structure 20 enclose the vacuum cavity N1, the pressure sensing module 100 is an absolute pressure sensing module, which can measure the absolute value of the pressure change and has the advantages of high precision and a large measurement range.

[0134] Through flip-chip interconnection vacuum packaging technology, the first substrate structure 10 and the second substrate structure 20 are bonded to form a vacuum cavity. The varistor is located inside the vacuum cavity. There is no need to use silicone oil protection to simplify the process, improve sensor performance, and avoid interference from the external environment.

[0135] In some embodiments, as Figure 1 and Figure 7 As shown, when the first substrate structure 10 and the second substrate structure 20 enclose a vacuum cavity N1 , the pressure sensing module 100 further includes a getter sheet 40 located in the vacuum cavity N1 .

[0136] For example, Figure 1 and Figure 7 As shown, the getter sheet 40 is a square getter sheet disposed on a surface of the first insulating layer 26 away from the second liner 25. Furthermore, the area of ​​the getter sheet 40 is smaller than the area of ​​the pressure-sensitive film 11. In some examples, the geometric center of the getter sheet 40 is collinear with the geometric center of the pressure-sensitive film 11.

[0137] For example, Figure 1 and Figure 4 As shown, when the getter sheet 40 is disposed on a surface of the first insulating layer 26 away from the second liner 25, the distance L10 between the second conductive bump 231 closest to the getter sheet 40 and the getter sheet 40 is greater than or equal to 50 μm, such as 50 μm, 60 μm, 70 μm, 75 μm, 80 μm, or 100 μm. This prevents the getter sheet 40 and the second conductive bump 231 from connecting with each other during use of the pressure sensing module 100, thereby preventing the module from being used poorly.

[0138] It can be understood that since the pressure sensing module 100 also includes an air-absorbing sheet 40 located in the vacuum cavity N1, the air-absorbing sheet 40 can be used to absorb the gas that may enter the vacuum cavity N1 during the use of the pressure sensing module 100, so that the vacuum cavity N1 maintains a high vacuum degree.

[0139] The material of the getter sheet 40 is not limited; it can absorb gas that may enter the vacuum chamber N1 during use of the pressure sensing module 100 and maintain the required vacuum level within the vacuum chamber N1. By using flip-chip interconnect vacuum packaging technology, the first and second substrate structures form a vacuum chamber, with the piezoresistor located within the chamber. This eliminates the need for silicone oil protection, simplifies the process, improves sensor performance, and protects against external environmental interference.

[0140] To summarize, some embodiments of the present application provide a pressure sensor, which grounds the welding ring, the first grounding pad, and the second grounding pad. The piezoresistor is located inside the fully shielded vacuum cavity formed, and is shielded by the sensor's own structure. There is no need to add a new shielding structure, and the structure and process are simple.

[0141] Not only does it not require additional process steps to produce the shielding structure, it also does not increase costs, and can reduce the impact of external electromagnetic environment interference on the performance of the varistor, thereby improving the accuracy of the pressure sensor.

[0142] At the same time, a unique wafer-level solder vacuum sealing technology is adopted. The welding ring has a certain height to automatically form a vacuum cavity, which simplifies the process by eliminating the need to etch the cavity. In addition, since eutectic bonding is basically made of silicon material, the bonding packaging stress is less than that of anodic bonding, and the pressure sensing module has better accuracy.

[0143] The above-mentioned pressure sensing module 100 is an absolute pressure sensing module, which can measure the absolute value of pressure changes and has the advantages of high accuracy and a large measurement range. However, the absolute pressure sensing module is not suitable for some measurements related to water pressure and air pressure. Therefore, a gauge pressure sensing module is proposed as follows:

[0144] like Figure 8 As shown, in some embodiments, a through hole 50 is opened in the middle of the second lining 25; the first substrate structure 10 and the second substrate structure 20 enclose a gauge pressure cavity N2; and a plurality of varistors 12 are located inside the gauge pressure cavity N2.

[0145] Here, there is no limitation on the size of the through hole 50. In some examples, such as Figure 8 As shown, the aperture L11 of the through hole 50 ranges from 0 to 100 μm, for example, 0 μm, 10 μm, 30 μm, 50 μm, 70 μm or 100 μm.

[0146] Illustratively, a third insulating layer (not shown in the figure) may be provided on the sidewall of the through hole, thereby improving the safety and reliability of the pressure sensor.

[0147] It can be understood that the gauge pressure cavity N2 is the aforementioned main cavity N. The through hole 50 can be used to connect the gauge pressure cavity N2 to the external atmospheric environment, so that the pressure of the gauge pressure cavity N2 is equal to the external pressure. Moreover, when the first substrate structure 10 and the second substrate structure 20 are enclosed to form the gauge pressure cavity N2, the pressure sensing module 100 is a gauge pressure type pressure sensor, which can be measured with atmospheric pressure as a reference object. It has the advantage of being easy to prepare and can be used to measure the relative pressure change values ​​of media such as water pressure and air pressure.

[0148] like Figure 9As shown, some embodiments of the present disclosure further provide a pressure sensor 200. The pressure sensor 200 includes a pressure sensing module 100 and a readout integrated circuit 150 provided by the above technical solution. The readout integrated circuit is electrically connected to the two third output conductive bumps 242 of the pressure sensing module 100.

[0149] The beneficial effects that can be achieved by the pressure sensor 200 provided in some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by the pressure sensing module 100 provided by the above technical solution, and will not be repeated here.

[0150] It is understood that when the piezoresistor 12 receives pressure, it generates a voltage signal and transmits the voltage signal to the readout integrated circuit 150. The readout integrated circuit 150 can further process the voltage signal and output it as a digital signal to feedback the pressure. In this way, the transmission of pressure measurement data can be achieved.

[0151] like Figure 10 As shown, some embodiments of the present disclosure further provide an electronic device 300 . The electronic device 300 includes a housing 310 and a pressure sensor 200 disposed on the housing 310 .

[0152] The beneficial effects that can be achieved by the electronic device 300 provided in some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by the pressure sensor 200 provided by the above technical solution, and will not be repeated here.

[0153] In some examples, the electronic device 300 may be a mobile phone, a computer, or a portable electronic device, so that the pressure sensing module 100 can be applied to technical scenarios such as automobiles and process production that require pressure measurement.

[0154] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A pressure sensing module, characterized in that: include: A first substrate structure includes a pressure-sensitive film and a pressure-sensitive resistor disposed on one side of the pressure-sensitive film; a second substrate structure, located on one side of the first substrate structure; a welding ring, the welding ring being located between the first substrate structure and the second substrate structure, the welding ring connecting the first substrate structure and the second substrate structure; The welding ring, the first substrate structure and the second substrate structure form a first cavity, and the pressure-sensitive film and the plurality of pressure-sensitive resistors are located in the first cavity; a first grounding component, the welding ring is grounded through the first grounding component; A surface of the first substrate structure away from the second substrate structure is grounded via a second grounding component, and / or a surface of the second substrate structure away from the first substrate structure is grounded via a third grounding component.

2. The pressure sensing module according to claim 1, wherein: The second substrate structure includes: a second liner; the welding ring is located on a side of the second liner close to the first surface of the first substrate structure; The first grounding component includes: A first grounding pad is located on the first surface of the second substrate; the first grounding pad is grounded; A ground trace is located on the first surface of the second liner, the solder ring is electrically connected to one end of the ground trace, and the other end of the ground trace is electrically connected to the first ground pad.

3. The pressure sensing module according to claim 1, wherein: The first substrate structure further includes: a first liner, the first liner comprising a first surface and a second surface opposite to each other, the first surface of the first liner being away from the second substrate structure, the first surface of the first liner having a groove recessed toward the second substrate structure, the bottom of the groove being the pressure-sensitive film; A buried oxide layer is provided on the second surface of the first liner; the varistor is provided on a surface of the buried oxide layer away from the first liner; the varistor is in contact with the buried oxide layer; The second grounding component includes a second grounding pad disposed on the first surface of the first substrate; the second grounding pad is grounded.

4. The pressure sensing module according to claim 1, wherein: The first substrate structure further includes: a first liner, the first liner comprising a first surface and a second surface opposite to each other, the first surface of the first liner being away from the second substrate structure, the first surface of the first liner having a groove recessed toward the second substrate structure, the bottom of the groove being the pressure-sensitive film; A buried oxide layer is provided on the second surface of the first liner; the varistor is provided on a surface of the buried oxide layer away from the first liner; the varistor is in contact with the buried oxide layer; The second grounding component includes a lead, and the first surface of the first substrate is grounded through the lead.

5. The pressure sensing module according to claim 1, wherein: The third grounding component includes: conductive glue; the second substrate structure includes: a second lining; The conductive adhesive is disposed on a surface of the second liner away from the first substrate structure, and the conductive adhesive is grounded.

6. The pressure sensing module according to any one of claims 1 to 5, characterized in that: The second substrate structure includes a plurality of first metal lines, which are electrically connected to the plurality of piezoresistors so as to electrically connect the plurality of piezoresistors to each other; at least one of the first metal lines is electrically connected to a readout integrated circuit.

7. The pressure sensing module according to claim 6, characterized in that: The first substrate structure further includes: a plurality of first conductive bump groups; the first conductive bump group includes two first conductive bumps, and the two first conductive bumps of the first conductive bump group are electrically connected to two ends of the varistor respectively; The second substrate structure further includes: a plurality of second conductive bump groups; the second conductive bump groups include two second conductive bumps, the first end of the first metal wire is electrically connected to one second conductive bump of one second conductive bump group, and the second end of the first metal wire is electrically connected to one second conductive bump of another second conductive bump group; The plurality of second conductive bump groups are connected to the plurality of first conductive bump groups correspondingly, and the plurality of varistors, the plurality of first conductive bump groups, the plurality of second conductive bump groups, and the plurality of first metal wires form a loop.

8. The pressure sensing module according to claim 7, wherein: The second substrate structure further includes: at least one third conductive bump; The third conductive bump is electrically connected to the middle end of the first metal wire, and the middle end of the first metal wire is located between the first end and the second end of the first metal wire; The plurality of first conductive bumps, the plurality of second conductive bumps, the at least one third conductive bump, the plurality of first metal wires and the plurality of varistors form a ring-shaped Wheatstone bridge structure.

9. The pressure sensing module according to claim 8, characterized in that: The at least one third conductive bump includes: a third input conductive bump; the third input conductive bump serves as an input end of the Wheatstone bridge structure; And / or, the at least one third conductive bump includes: a third output conductive bump; the third output conductive bump serves as an output end of the Wheatstone bridge structure; the third output conductive bump is electrically connected to the readout integrated circuit; And / or, the at least one third conductive bump includes: a third grounding conductive bump; the third grounding conductive bump serves as a grounding end of the Wheatstone bridge structure.

10. The pressure sensing module according to claim 9, characterized in that: The orthographic projections of the multiple first conductive bump groups, the multiple first conductive bump groups, and the multiple varistors on the plane where the second substrate structure is located are located within an area enclosed by the orthographic projection of the solder ring on the plane where the second substrate structure is located, and the orthographic projection of the at least one third conductive bump on the plane where the second substrate structure is located is located outside the orthographic projection of the solder ring on the plane where the second substrate structure is located.

11. The pressure sensing module according to claim 6, wherein: The second substrate structure further includes: a second liner, wherein the plurality of first metal wires are located on a side of the second liner close to the first substrate structure; and the welding ring is provided on a side of the plurality of first metal wires away from the second liner; A first insulating layer is located between the first metal line and the solder ring, and the solder ring contacts a surface of the first insulating layer and a second insulating layer on a surface of the second liner.

12. The pressure sensing module according to claim 1, wherein: The first substrate structure, the second substrate structure, and the welding ring form a vacuum cavity; the multiple varistors are located inside the vacuum cavity.

13. The pressure sensing module according to claim 12, wherein: The pressure sensing module further includes an air getter plate located in the vacuum cavity.

14. A pressure sensor, characterized in that: The pressure sensing module according to any one of claims 6 to 13 further comprises: A readout integrated circuit; the readout integrated circuit is electrically connected to at least one first metal line.

15. An electronic device, characterized in that: The device comprises a housing and the pressure sensor according to claim 14 arranged on the housing.

Images