RF signal modulation circuit, RF signal generating device, and RF power supply device

Abstract

The present application provides a radio frequency signal modulation circuit, a radio frequency signal generating device, and a radio frequency power supply device. The radio frequency signal modulation circuit includes: a signal input terminal, a modulation unit, a pulse width modulation signal source, a rectifier unit, a comparison unit, and a signal output terminal. The signal input terminal is used to input an initial radio frequency signal; the modulation unit is used to modulate the initial radio frequency signal to obtain an intermediate radio frequency signal; the pulse width modulation signal source is used to output a pulse width modulation signal; the rectifier unit is used to rectify the pulse width modulation signal to obtain a direct current voltage signal; the comparison unit is used to compare the intermediate radio frequency signal with the direct current voltage signal to obtain a target radio frequency signal and output it through the output terminal; the signal output terminal is used to output the target radio frequency signal; wherein the on-duty cycle of the target radio frequency signal changes at least according to the change of the on-duty cycle of the pulse width modulation signal. The present application can flexibly adjust the on-duty cycle of the radio frequency signal.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency signal modulation circuit, a radio frequency signal generating device, and a radio frequency power supply device. Background Art

[0002] Radio frequency (RF) is a technology that uses electromagnetic waves for wireless communication and has widespread applications across multiple fields. In recent years, RF technology has rapidly developed and become widely used. With the increasing popularity of RF, requirements for the on-duty cycle of RF signals have gradually emerged. However, RF signals have high frequencies, reaching 13.56 MHz or even higher, making it difficult to adjust the on-duty cycle of RF signals. Therefore, how to flexibly adjust the on-duty cycle of RF signals to meet the required RF duty cycle has become a challenge. Summary of the Invention

[0003] The present application provides a radio frequency signal modulation circuit, a radio frequency signal generating device, and a radio frequency power supply device, which can flexibly adjust the conduction percentage of the radio frequency signal.

[0004] In a first aspect, a radio frequency signal modulation circuit is provided, which includes: a signal input terminal, a modulation unit, a pulse width modulation signal source, a rectification unit, a comparison unit and a signal output terminal. The signal input terminal is used to input an initial RF signal; the modulation unit is connected to the signal input terminal and is used to modulate the initial RF signal to obtain an intermediate RF signal; the pulse width modulation signal source is used to output a pulse width modulation signal; the rectification unit is connected to the pulse width modulation signal source and is used to rectify the pulse width modulation signal to obtain a DC voltage signal; the comparison unit includes two input terminals and an output terminal, the two input terminals being connected to the modulation unit and the rectification unit respectively; the comparison unit is used to compare the intermediate RF signal with the DC voltage signal to obtain a target RF signal and output it through the output terminal, wherein the on-duty cycle of the target RF signal is different from the on-duty cycle of the initial RF signal, and the frequency of the target RF signal is the same as the frequency of the initial RF signal; the signal output terminal is connected to the output terminal of the comparison unit and is used to output the target RF signal; wherein the on-duty cycle of the target RF signal changes at least according to the change of the on-duty cycle of the pulse width modulation signal.

[0005] In one possible implementation, the modulation unit is configured to perform waveform modulation on the initial RF signal to obtain an intermediate RF signal having a specific waveform, wherein, during at least a portion of a period within a cycle, a voltage value of the intermediate RF signal varies with time, and wherein the amplitude of the DC voltage signal varies according to a change in an on-duty cycle of the pulse width modulation signal, so that the on-duty cycle of the target RF signal varies.

[0006] In a possible embodiment, the two input ends of the comparison unit include a first input end and a second input end, the modulation unit is connected to the first input end, and the rectification unit is connected to the second input end; wherein, when the on-duty cycle of the pulse width modulation signal increases, the DC voltage signal correspondingly increases, so that the on-duty cycle of the target radio frequency signal decreases; when the on-duty cycle of the pulse width modulation signal decreases, the DC voltage signal correspondingly decreases, so that the on-duty cycle of the target radio frequency signal increases.

[0007] In a possible embodiment, the rectifier unit includes a first diode, the anode of the first diode is connected to the pulse width modulation signal source, the cathode of the first diode is connected to the second input end, and the first diode is a unidirectional conducting diode, which is used to rectify the pulse width modulation signal to obtain the DC voltage signal.

[0008] In one possible embodiment, the modulation unit includes a first resistor and a first capacitor, which are connected in series between the signal input terminal and the ground in sequence, and the connection point between the first resistor and the first capacitor is connected to the first input terminal, wherein the first capacitor is used to charge during the high level duration of the initial RF signal and discharge during the low level duration of the initial RF signal, and the first resistor is used to affect the charging speed and discharging speed of the first capacitor.

[0009] In a possible implementation, the radio frequency signal modulation circuit further includes a filtering unit connected between the rectifying unit and the second input end, and configured to filter out an AC component from the DC voltage signal.

[0010] In one possible implementation, the comparison unit includes an operational amplifier, and the first input terminal, the second input terminal, and the output terminal of the comparison unit are respectively the non-inverting input terminal, the inverting input terminal, and the output terminal of the operational amplifier. The operational amplifier is used to compare the intermediate RF signal with the DC voltage signal, and output a high level when the voltage value of the intermediate RF signal is greater than the voltage value of the DC voltage signal, and output a low level when the voltage value of the intermediate RF signal is less than the voltage value of the DC voltage signal, so as to obtain the target RF signal.

[0011] In a possible implementation, the radio frequency signal modulation circuit further includes an isolation unit, which is connected between the signal input end and the modulation unit and is used to isolate the signal input end from the modulation unit.

[0012] In a second aspect, a radio frequency signal generating device is provided, comprising a radio frequency signal modulation circuit comprising: a signal input terminal, a modulation unit, a pulse width modulation signal source, a rectification unit, a comparison unit, and a signal output terminal. The signal input terminal is used to input an initial RF signal; the modulation unit is connected to the signal input terminal and is used to modulate the initial RF signal to obtain an intermediate RF signal; the pulse width modulation signal source is used to output a pulse width modulation signal; the rectification unit is connected to the pulse width modulation signal source and is used to rectify the pulse width modulation signal to obtain a DC voltage signal; the comparison unit includes two input terminals and an output terminal, the two input terminals being connected to the modulation unit and the rectification unit respectively; the comparison unit is used to compare the intermediate RF signal with the DC voltage signal to obtain a target RF signal and output it through the output terminal, wherein the on-duty cycle of the target RF signal is different from the on-duty cycle of the initial RF signal, and the frequency of the target RF signal is the same as the frequency of the initial RF signal; the signal output terminal is connected to the output terminal of the comparison unit and is used to output the target RF signal; wherein the on-duty cycle of the target RF signal changes at least according to the change of the on-duty cycle of the pulse width modulation signal.

[0013] In a third aspect, a radio frequency power supply device is further provided, wherein the radio frequency power supply device includes a radio frequency signal generating device. The radio frequency signal generating device includes a radio frequency signal modulation circuit.

[0014] The RF signal modulation circuit, RF signal generating device and RF power supply equipment of the present application modulate the initial RF signal by setting a modulation unit to obtain an intermediate RF signal, and compare the intermediate RF signal with a DC voltage signal by setting a comparison unit to obtain a target RF signal. The on-duty cycle of the target RF signal can be made different from the on-duty cycle of the initial RF signal, and the on-duty cycle of the RF signal can be flexibly adjusted at least according to the on-duty cycle of the pulse width modulation signal to meet the on-duty cycle adjustment requirements of the RF signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0016] Figure 1 2 is a block diagram of a radio frequency signal modulation circuit in an embodiment of the present application.

[0017] Figure 2 Schematic diagram of waveforms of an intermediate radio frequency signal and a DC voltage signal of a radio frequency signal modulation circuit in an embodiment of the present application.

[0018] Figure 3 2 is a circuit diagram of a radio frequency signal modulation circuit in an embodiment of the present application.

[0019] Figure 4 This is a circuit diagram of a radio frequency signal modulation circuit in an embodiment of the present application further including an adjustment unit and a control unit.

[0020] Figure 5 FIG. 1 is a block diagram of a radio frequency signal generating device in an embodiment of the present application.

[0021] Figure 6 Schematic diagram of a radio frequency power supply device in one embodiment of the present application.

[0022] Explanation of the accompanying symbols: 10. RF signal modulation circuit, 100. Signal input terminal, RF1, initial RF signal, 200. Modulation unit, R1, first resistor, C1, first capacitor, RF2, intermediate RF signal, 300. Pulse width modulation signal source, PWM, pulse width modulation signal, 310. Rectification unit, DC, DC voltage signal, D1, first diode, 320. Filtering unit, R2, second resistor, C2, second capacitor, 400. Comparison unit, In1, first input terminal, In2, second input terminal, O1, output terminal, RF3, target RF signal, 500. Signal output terminal, 600. Isolation unit, 700. Adjustment unit, 710, first adjustment module, 720, second adjustment module, 800, control unit, GND, ground, 20. Crystal oscillator circuit, 1000. RF signal generating device, 1. RF power supply equipment, RL, load. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] In the description of the embodiments of this application, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0025] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of this application, unless otherwise specified, "plurality" means two or more.

[0026] In addition, the terms "include" and "have" and any variations thereof are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, product, or device.

[0027] See also Figure 1 , Figure 1 FIG. 1 is a block diagram of a radio frequency signal modulation circuit 10 in an embodiment of the present application. Figure 1 As shown, the present application provides a radio frequency signal modulation circuit 10, which includes: a signal input terminal 100, a modulation unit 200, a pulse width modulation signal source 300, a rectifier unit 310, a comparison unit 400, and a signal output terminal 500. The signal input terminal 100 is used to input an initial radio frequency signal RF1; the modulation unit 200 is connected to the signal input terminal 100, and is used to modulate the initial radio frequency signal RF1 to obtain an intermediate radio frequency signal RF2; the pulse width modulation signal source 300 is used to output a pulse width modulation signal PWM; the rectifier unit 310 is connected to the pulse width modulation signal source 300, and is used to rectify the pulse width modulation signal PWM to obtain a direct current voltage signal DC; the comparison unit 400 includes two input terminals and an output terminal O1, the two input terminals are connected to the modulation unit 200 and the rectifier unit 310 respectively, and the comparison unit 400 is used to output a direct current voltage signal DC. 00 is used to compare the intermediate RF signal RF2 with the DC voltage signal DC to obtain a target RF signal RF3, and output it through the output terminal O1, wherein the on-duty cycle of the target RF signal RF3 is different from the on-duty cycle of the initial RF signal RF1, and the frequency of the target RF signal RF3 is the same as the frequency of the initial RF signal RF1; the signal output terminal 500 is connected to the output terminal O1 of the comparison unit 400, and is used to output the target RF signal RF3; wherein the on-duty cycle of the target RF signal RF3 changes at least according to the change of the on-duty cycle of the pulse width modulation signal PWM.

[0028] Thus, the above-mentioned RF signal modulation circuit 10 in the present application modulates the initial RF signal RF1 by setting a modulation unit 200 to obtain an intermediate RF signal RF2, and compares the intermediate RF signal RF2 with the DC voltage signal DC by setting a comparison unit 400 to obtain a target RF signal RF3, so that the on-duty cycle of the target RF signal RF3 is different from the on-duty cycle of the initial RF signal RF1, and at the same time, the on-duty cycle of the RF signal is flexibly adjusted according to at least the on-duty cycle of the pulse width modulation signal PWM to meet the on-duty cycle adjustment requirements of the RF signal.

[0029] Specifically, the initial RF signal RF1 is a signal with an on-duty cycle of 50%, an extremely high frequency, and an extremely short period. However, when applied in certain fields, for example, when outputting an RF signal to a plasma load, the on-duty cycle of the initial RF signal RF1 needs to be 20%, 30%, 40%, 60%, etc., or the on-duty cycle of the initial RF signal RF1 needs to be adjusted at any time. It is currently difficult to meet the adjustment requirements of the on-duty cycle of the initial RF signal RF1. The above-mentioned RF signal modulation circuit 10 in the present application, after the modulation unit 200 modulates the initial RF signal RF1 to obtain the intermediate RF signal RF2, can compare the intermediate RF signal RF2 with the DC voltage signal DC through the comparison unit 400, so that the on-duty cycle of the obtained target RF signal RF3 is different from the on-duty cycle of the initial RF signal RF1, but the frequency of the target RF signal RF3 is still the same as the frequency of the initial RF signal RF1. The frequency of the pulse width modulation signal PWM is much smaller than the frequency of the initial RF signal RF1, which is very easy to implement. Therefore, it is equivalent to obtaining RF signals with different on-duty cycles in a simple manner. In addition, the on-duty cycle of the target RF signal RF3 can be further changed by adjusting the on-duty cycle of the pulse width modulation signal PWM to meet the on-duty cycle adjustment requirement of the RF signal and provide an RF signal with the required on-duty cycle.

[0030] In some embodiments, the initial RF signal RF1 may have an on-duty cycle of 50% and be a square wave signal. Obviously, the initial RF signal RF1 may also have any other on-duty cycle and any waveform shape. For example, the initial RF signal RF1 may have an on-duty cycle of 40% and be a sine wave signal.

[0031] The target RF signal RF3 has a different on-duty cycle from the initial RF signal RF1 , but has the same frequency and a square wave waveform.

[0032] Please also refer to Figure 2 , Figure 2 FIG. 1 is a waveform diagram of the intermediate radio frequency signal RF2 and the DC voltage signal DC of the radio frequency signal modulation circuit 10 in an embodiment of the present application. Figure 1 、 Figure 2 As shown, the modulation unit 200 is used to perform waveform modulation on the initial RF signal RF1 to obtain an intermediate RF signal RF2 having a specific waveform, wherein the voltage value of the intermediate RF signal RF2 varies with time during at least a portion of a period within a cycle, and the amplitude of the DC voltage signal DC varies according to the change of the on-duty cycle of the pulse width modulation signal PWM, so that the on-duty cycle of the target RF signal RF3 varies.

[0033] Among them, such as Figure 2As shown, in at least part of a period within a cycle, the voltage value of the intermediate radio frequency signal RF2 changes with time, that is, the intermediate radio frequency signal RF2 is not a square wave whose positive and negative amplitudes remain constant within a cycle, but a non-square wave signal. For example, Figure 2 As shown, the specific waveform of the intermediate RF signal RF2 can be an S-shaped waveform (Sigmoid function waveform) similar to a triangular wave waveform. Therefore, when the amplitude of the DC voltage signal DC changes according to the change in the on-duty cycle of the pulse width modulation signal PWM, when the comparison unit 400 compares the intermediate RF signal RF2 with the DC voltage signal DC, the time period during which the amplitude of the intermediate RF signal RF2 is greater than the amplitude of the DC voltage signal DC within a cycle of the intermediate RF signal RF2 will change accordingly, causing the time period during which the comparison unit 400 outputs a high level or a low level to change, thereby causing the ratio of the high and low levels within a cycle to change, and causing the on-duty cycle of the target RF signal RF3 to change.

[0034] in, Figure 2 In the figure, the intermediate RF signal RF2 is exemplified as a triangular-wave-like S-shaped waveform (Sigmoid function waveform). In one or more embodiments, the intermediate RF signal RF2 may also be a triangular waveform or an irregular waveform, which is different from the waveform of the initial RF signal RF1. The present application is not limited thereto.

[0035] See also Figure 3 , Figure 3 FIG. 1 is a circuit diagram of a radio frequency signal modulation circuit 10 in an embodiment of the present application. Figure 3 As shown, the two input terminals of the comparison unit 400 include a first input terminal In1 and a second input terminal In2, the modulation unit 200 is connected to the first input terminal In1, and the rectification unit 310 is connected to the second input terminal In2; wherein, when the on-duty cycle of the pulse width modulation signal PWM increases, the DC voltage signal DC correspondingly increases, so that the on-duty cycle of the target radio frequency signal RF3 decreases; when the on-duty cycle of the pulse width modulation signal PWM decreases, the DC voltage signal DC correspondingly decreases, so that the on-duty cycle of the target radio frequency signal RF3 increases.

[0036] Therefore, the above-mentioned RF signal modulation circuit 10 in the present application can make the DC voltage signal DC change in response to the change in the on-duty cycle of the pulse width modulation signal PWM. When the DC voltage signal DC increases, the on-duty cycle of the target RF signal RF3 decreases, and when the DC voltage signal DC decreases, the on-duty cycle of the target RF signal RF3 increases.

[0037] Specifically, when the DC voltage signal DC increases, the waveform of the intermediate RF signal RF2 does not change, so the on-duty cycle of the target RF signal RF3 decreases; when the DC voltage signal DC decreases, the waveform of the intermediate RF signal RF2 also does not change, and the on-duty cycle of the target RF signal RF3 increases.

[0038] like Figure 3 As shown, the rectifier unit 310 includes a first diode D1, the anode of the first diode D1 is connected to the pulse width modulation signal source 300, and the cathode of the first diode D1 is connected to the second input terminal In2. The first diode D1 is a unidirectional conducting diode, which is used to rectify the pulse width modulation signal PWM to obtain a direct current voltage signal DC.

[0039] Therefore, the radio frequency signal modulation circuit 10 in the present application utilizes the first diode D1 and the corresponding connection relationship to perform half-wave rectification on the pulse width modulation signal PWM to obtain a corresponding direct current voltage signal DC.

[0040] In one or more embodiments, the on-duty cycle of the target RF signal RF3 also changes according to changes in the resistance value and / or capacitance value of the modulation unit 200 .

[0041] Therefore, the above-mentioned RF signal modulation circuit 10 in the present application can flexibly adjust the conduction duty cycle of the RF signal according to at least the resistance value and / or capacitance value of the modulation unit 200 to meet the requirements of different conduction duty cycles of the RF signal.

[0042] In one or more embodiments, the waveform parameters of the intermediate RF signal RF2 vary at least according to the change of the resistance value and / or capacitance value of the modulation unit 200, so that the on-duty cycle of the target RF signal RF3 varies accordingly.

[0043] The waveform parameters of the intermediate RF signal RF2 include parameters such as the rate of change, amplitude, period, and frequency of a specific waveform of the intermediate RF signal RF2.

[0044] like Figure 3 As shown, the modulation unit 200 includes a first resistor R1 and a first capacitor C1, which are connected in series between the signal input terminal 100 and the ground GND in sequence, and the connection point between the first resistor R1 and the first capacitor C1 is connected to the first input terminal In1, wherein the first capacitor C1 is used to charge during the high level duration of the initial RF signal RF1 and discharge during the low level duration of the initial RF signal RF1, and the first resistor R1 is used to affect the charging speed and discharging speed of the first capacitor C1.

[0045] Thus, the RF signal modulation circuit 10 in the present application, by setting the first resistor R1, the first capacitor C1 and the corresponding connection relationship of the modulation unit 200, is charged during the high level duration of the initial RF signal RF1, and discharged during the low level duration of the initial RF signal RF1, and the charging speed and the discharging speed of the first capacitor C1 are affected by the first resistor R1, so that the initial RF signal RF1 can be modulated to obtain the following: Figure 2 The intermediate radio frequency signal RF2 is shown.

[0046] Specifically, such as Figure 2 As shown, taking the on-duty cycle of the initial RF signal RF1 as 50% as an example, the waveform of the intermediate RF signal RF2 is simulated. When the modulation unit 200 includes the first resistor R1 and the first capacitor C1, the specific waveform of the intermediate RF signal RF2 is an S-shaped waveform. The first capacitor C1 is charged during the high-level duration of the initial RF signal RF1. When charging begins, the voltage value of the intermediate RF signal RF2 rises rapidly, that is, the rate of change of the waveform parameter is large. However, as the first capacitor C1 charges, the voltage value of the intermediate RF signal RF2 gradually rises slowly until it approaches the voltage value of the initial RF signal RF1. Figure 2 Vrf is shown as the voltage value of the initial RF signal RF1. The first capacitor C1 discharges during the low-level duration of the initial RF signal RF1. Initially, the voltage value of the intermediate RF signal RF2 decreases rapidly, i.e., the rate of change of the waveform parameters is large. However, as the first capacitor C1 discharges, the voltage value of the intermediate RF signal RF2 gradually decreases until it approaches zero voltage. When the resistance value of the first resistor R1 and / or the capacitance value of the first capacitor C1 changes, the rate of change and amplitude of the waveform parameters of the intermediate RF signal RF2 change accordingly, causing the on-duty cycle of the target RF signal RF3, obtained after comparison with the DC voltage signal DC having a voltage value of Vdc, to change.

[0047] It should be noted that, since the initial RF signal RF1 periodically alternates between high and low levels, the first capacitor C1 is also periodically charged and discharged to obtain the intermediate RF signal RF2, and the period of the intermediate RF signal RF2 is the same as the period of the initial RF signal RF1. Figure 2 As shown in T1, the frequency of the intermediate radio frequency signal RF2 is also equal to the frequency of the initial radio frequency signal RF1.

[0048] In one or more embodiments, the first resistor R1 is an adjustable resistor so that the modulation unit 200 has an adjustable resistance value; wherein, when the resistance value of the first resistor R1 increases, the on-duty cycle of the target RF signal RF3 decreases, and when the resistance value of the first resistor R1 decreases, the on-duty cycle of the target RF signal RF3 increases.

[0049] Thus, in the above-mentioned RF signal modulation circuit 10 in the present application, when the first resistor R1 is an adjustable resistor, when the resistance value of the first resistor R1 increases, the on-duty cycle of the target RF signal RF3 decreases, and when the resistance value of the first resistor R1 decreases, the on-duty cycle of the target RF signal RF3 increases. The on-duty cycle of the RF signal can be adjusted by adjusting the resistance value of the first resistor R1 to meet the on-duty cycle requirement of the RF signal.

[0050] In one or more embodiments, the first resistor R1 can be an electronically adjustable resistor or a mechanically adjustable resistor, wherein the electronically adjustable resistor can be a resistor that adjusts the resistance value by adjusting the voltage or current, and the mechanically adjustable resistor can be a resistor that adjusts the resistance value by rotating or sliding.

[0051] Specifically, when the first resistor R1 is a sliding rheostat, the first resistor R1 may have an adjustment end, and the adjustment end of the first resistor R1 is connected to one end or the other end of the first resistor R1. When the adjustment end of the first resistor R1 moves, that is, when the position of the adjustment end of the first resistor R1 on the first resistor R1 changes, the resistance value of the first resistor R1 changes accordingly.

[0052] In one or more embodiments, the first capacitor C1 is an adjustable capacitor so that the modulation unit 200 has an adjustable capacitance value; wherein, when the capacitance value of the first capacitor C1 increases, the on-duty cycle of the target RF signal RF3 decreases, and when the resistance and capacitance value of the first capacitor C1 decreases, the on-duty cycle of the target RF signal RF3 increases.

[0053] Thus, in the above-mentioned RF signal modulation circuit 10 in the present application, when the first capacitor C1 is an adjustable capacitor, when the capacitance value of the first capacitor C1 increases, the on-duty cycle of the target RF signal RF3 decreases, and when the resistance capacitance value of the first capacitor C1 decreases, the on-duty cycle of the target RF signal RF3 increases. By adjusting the capacitance value of the first capacitor C1, the on-duty cycle of the RF signal can be adjusted as needed to meet the on-duty cycle requirement of the RF signal.

[0054] In one or more embodiments, a first resistor R1 and a first capacitor C1 are connected in series between the signal input terminal 100 and the ground GND. The first resistor R1 has an adjustment terminal, and the adjustment terminal of the first resistor R1 is connected to the first input terminal In1. The first capacitor C1 is configured to charge during a high-level duration of the initial RF signal RF1 and discharge during a low-level duration of the initial RF signal RF1. The first resistor R1 is configured to affect the charging speed and the discharging speed of the first capacitor C1. When the adjustment terminal of the first resistor R1 moves, the waveform parameters of the intermediate RF signal RF2 change accordingly, so that the on-duty cycle of the target RF signal RF3 changes.

[0055] Thus, in the above-mentioned RF signal modulation circuit 10 in the present application, when the first resistor R1 and the first capacitor C1 are connected to the signal input terminal 100 and the first input terminal In1 in the above-mentioned manner, and the first resistor R1 has an adjustment end, when the adjustment end of the first resistor R1 moves, the waveform parameters of the intermediate RF signal RF2 change accordingly, so that the on-duty cycle of the target RF signal RF3 changes. By adjusting the position of the adjustment end of the first resistor R1 on the first resistor R1, the on-duty cycle of the RF signal can be adjusted as needed to meet the on-duty cycle requirement of the RF signal.

[0056] Specifically, the first resistor R1 can be an adjustable resistor. Further, the first resistor R1 can be a sliding rheostat, but the adjustment end of the above-mentioned first resistor R1 is only connected to the first input end In1. Therefore, when the adjustment end of the first resistor R1 moves, that is, when the position of the adjustment end of the first resistor R1 on the first resistor R1 changes, the resistance value of the first resistor R1 does not change.

[0057] Furthermore, one end of the first resistor R1 is connected to the signal input terminal 100, the other end of the first resistor R1 is connected to one end of the first capacitor C1, the adjustment end of the first resistor R1 is connected to the first input terminal In1, and the other end of the first capacitor C1 is grounded GND; wherein, when the adjustment end of the first resistor R1 moves toward one end of the first resistor R1, the on-duty cycle of the target RF signal RF3 increases, and when the adjustment end of the first resistor R1 moves toward the other end of the first resistor R1, the on-duty cycle of the target RF signal RF3 decreases.

[0058] Thus, in the above-mentioned RF signal modulation circuit 10 in the present application, when the adjustment end of the first resistor R1 moves toward one end of the first resistor R1, the on-duty cycle of the target RF signal RF3 increases, and when the adjustment end of the first resistor R1 moves toward the other end of the first resistor R1, the on-duty cycle of the target RF signal RF3 decreases. The on-duty cycle of the RF signal can be adjusted as needed to meet the on-duty cycle requirement of the RF signal.

[0059] Specifically, when the adjustment end of the first resistor R1 moves toward one end of the first resistor R1, the portion of the intermediate RF signal RF2 that is higher than the DC voltage signal DC increases, and the on-duty cycle of the target RF signal RF3 increases; when the adjustment end of the first resistor R1 moves toward the other end of the first resistor R1, the portion of the intermediate RF signal RF2 that is higher than the DC voltage signal DC decreases, and the on-duty cycle of the target RF signal RF3 decreases.

[0060] like Figure 3As shown, the RF signal modulation circuit 10 further includes a filtering unit 320 . The filtering unit 320 is connected between the rectifying unit 310 and the second input terminal In2 . The filtering unit 320 is configured to filter out the AC component in the DC voltage signal DC.

[0061] Therefore, the above-mentioned RF signal modulation circuit 10 in the present application can filter the rectified DC voltage signal DC by setting the filtering unit 320 between the rectifier unit 310 and the second input terminal In2, filter out the AC component in the DC voltage signal DC, and avoid affecting the comparison result of the comparison unit 400 between the intermediate RF signal RF2 and the DC voltage signal DC.

[0062] like Figure 3 As shown, the filtering unit 320 includes a second resistor R2 and a second capacitor C2, one end of the second resistor R2 is connected to the connection point between the rectifier unit 310 and the second input terminal In2, the other end of the second resistor R2 is grounded GND, and the second capacitor C2 is connected in parallel with the second resistor R2.

[0063] Therefore, the radio frequency signal modulation circuit 10 in the present application achieves filtering of the direct current voltage signal DC by setting the second resistor R2 and the second capacitor C2 of the filtering unit 320 and the corresponding connection relationship.

[0064] like Figure 3 As shown, the comparison unit 400 includes an operational amplifier. The first input terminal In1, the second input terminal In2, and the output terminal O1 of the comparison unit 400 are respectively the non-inverting input terminal, the inverting input terminal, and the output terminal O1 of the operational amplifier. The operational amplifier is used to compare the intermediate RF signal RF2 with the DC voltage signal DC. When the voltage value of the intermediate RF signal RF2 is greater than the voltage value of the DC voltage signal DC, the operational amplifier outputs a high level. When the voltage value of the intermediate RF signal RF2 is less than the voltage value of the DC voltage signal DC, the operational amplifier outputs a low level to obtain the target RF signal RF3.

[0065] Therefore, the above-mentioned RF signal modulation circuit 10 in the present application, by setting the comparison unit 400 to include an operational amplifier, can output a high level when the voltage value of the intermediate RF signal RF2 is greater than the voltage value of the DC voltage signal DC, and output a low level when the voltage value of the intermediate RF signal RF2 is less than the voltage value of the DC voltage signal DC, so as to obtain the target RF signal RF3.

[0066] Specifically, such as Figure 2As shown in FIG, within a period T1 of the intermediate RF signal RF2 and the initial RF signal RF1, the operational amplifier sequentially outputs a low level, a high level, and a low level. However, the period T2 of the target RF signal RF3 obtained is still equal to T1. Therefore, the frequency of the target RF signal RF3 is also equal to the frequency of the initial RF signal RF1. The on-duty cycle of the initial RF signal RF1 is the first half of a period T1, while the on-duty cycle of the target RF signal RF3 is Figure 2 As shown in d2 , the on-duty cycle of the target RF signal RF3 is different from the on-duty cycle of the initial RF signal RF1 .

[0067] In particular, when designing the voltage value and period of the initial RF signal RF1, the capacitance value of the first capacitor C1, the resistance value of the first resistor R1, the on-duty cycle of the pulse width modulation signal PWM, and the voltage value of the DC voltage signal DC, in order to avoid the on-duty cycle of the output target RF signal RF3 being zero, as shown in FIG. Figure 2 As shown, the voltage amplitude of the intermediate radio frequency signal RF2 can be at least greater than the voltage value of the DC voltage signal DC, and the minimum voltage value that can be reached by discharging the first capacitor C1 should be at least less than the voltage value of the DC voltage signal DC, that is, according to the characteristics of the RC charge-discharge circuit composed of the first capacitor C1 and the first resistor R1, in the case of Figure 2 During the period T1 shown, the voltage amplitude that can be reached by charging the first capacitor C1 can be at least greater than the voltage value of the DC voltage signal DC, and the minimum voltage that can be reached by discharging the first capacitor C1 can be at least less than the voltage value of the DC voltage signal DC.

[0068] In one or more embodiments, the RF signal modulation circuit 10 may further include a phase shift unit connected between the comparison unit 400 and the signal output terminal 500, configured to shift the phase of the target RF signal RF3 so that the phase difference with the initial RF signal RF1 is zero. The phase shift angle of the phase shift unit may be set based on the angle corresponding to the time required for the first capacitor C1 to charge to reach the voltage value of the DC voltage signal DC.

[0069] In one or more embodiments, the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the on-duty cycle of the pulse width modulation signal PWM can be adjusted individually, or simultaneously, or in any order. The present application is not limited thereto. When the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the on-duty cycle of the pulse width modulation signal PWM are increased simultaneously, the on-duty cycle of the target RF signal RF3 is reduced; when the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the on-duty cycle of the pulse width modulation signal PWM are decreased simultaneously, the on-duty cycle of the target RF signal RF3 is increased. Thus, the desired on-duty cycle of the target RF signal RF3 can be obtained more quickly.

[0070] In one or more embodiments, in actual use, since the on-duty cycle of the pulse width modulation signal PWM has a greater impact on the on-duty cycle of the target RF signal RF3 when it changes than the impact of the resistance value and / or capacitance value of the modulation unit 200 when it changes on the on-duty cycle of the target RF signal RF3, the on-duty cycle of the pulse width modulation signal PWM is first adjusted, and then the resistance value and / or capacitance value of the modulation unit 200 are further adjusted, that is, the resistance value of the first resistor R1 and / or the capacitance value of the first capacitor C1 are further adjusted. Thus, the on-duty cycle of the target RF signal RF3 can be coarsely adjusted first, and then the on-duty cycle of the target RF signal RF3 can be fine-tuned to more accurately obtain the desired on-duty cycle of the RF signal.

[0071] like Figure 3 As shown, the RF signal modulation circuit 10 further includes an isolation unit 600 , which is connected between the signal input terminal 100 and the modulation unit 200 and is used to isolate the signal input terminal 100 from the modulation unit 200 .

[0072] Therefore, the above-mentioned RF signal modulation circuit 10 in the present application, by setting the RF signal modulation circuit 10 to also include an isolation unit 600 connected between the signal input terminal 100 and the modulation unit 200, can isolate the signal input terminal 100 from the modulation unit 200, so as to isolate the initial RF signal RF1 and the intermediate RF signal RF2, thereby preventing the intermediate RF signal RF2 from affecting the output of the initial RF signal RF1.

[0073] In one or more embodiments, the isolation unit 600 includes an operational amplifier, the positive input terminal of the operational amplifier is connected to the signal input terminal 100, the negative input terminal of the operational amplifier is grounded GND, the output terminal of the operational amplifier is connected to the modulation unit 200, the non-inverting input terminal of the operational amplifier inputs the initial RF signal RF1, and the output terminal outputs the initial RF signal RF1.

[0074] See also Figure 4 , Figure 4 FIG. 1 is a circuit diagram of the radio frequency signal modulation circuit 10 in an embodiment of the present application, which further includes an adjustment unit 700 and a control unit 800. Figure 4 As shown, the RF signal modulation circuit 10 further includes an adjustment unit 700 , which is connected to the modulation unit 200 and is configured to adjust the resistance value and / or capacitance value of the modulation unit 200 .

[0075] like Figure 4 As shown, the adjustment unit 700 includes a first adjustment module 710 and a second adjustment module 720, the first adjustment module 710 is connected to the first resistor R1, and the second adjustment module 720 is connected to the first capacitor C1, wherein the first adjustment module 710 is used to adjust the resistance value of the first resistor R1, and the second adjustment module 720 is used to adjust the capacitance value of the first capacitor C1.

[0076] In one or more embodiments, depending on the selected types of the first resistor R1 and the first capacitor C1, the first adjustment module 710 and the second adjustment module 720 can be rotating motors or other adjustment circuits composed of electronic components. The present application is not limited to this, as long as the resistance value of the first resistor R1 and the capacitance value of the first capacitor C1 can be adjusted.

[0077] In one or more embodiments, when the first resistor R1 has an adjustment terminal, the first adjustment module 710 adjusts the resistance value of the first resistor R1 by adjusting the adjustment terminal of the first resistor R1. Specifically, the first adjustment module 710 adjusts the resistance value of the first resistor R1 by adjusting the position of the adjustment terminal of the first resistor R1 on the first resistor R1.

[0078] like Figure 4 As shown, the RF signal modulation circuit 10 further includes a control unit 800 , which is connected to at least the adjustment unit 700 . The control unit 800 is at least configured to output a control signal to control the adjustment unit 700 to adjust the resistance value and / or capacitance value of the modulation unit 200 .

[0079] In one or more embodiments, the control unit 800 is connected to both the first adjustment module 710 and the second adjustment module 720, and is configured to output corresponding control signals to control the first adjustment module 710 to adjust the resistance value of the first resistor R1, and to control the second adjustment module 720 to adjust the capacitance value of the first capacitor C1. When the first adjustment module 710 and the second adjustment module 720 are rotating motors, the corresponding control signals may be pulse signals.

[0080] like Figure 4 As shown, the control unit 800 is also connected to the pulse width modulation signal source 300, and the control unit 800 is also used to control the on-duty cycle of the pulse width modulation signal PWM.

[0081] In one or more embodiments, the control unit 800 can also be used to simultaneously increase the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the on-duty cycle of the pulse width modulation signal PWM, or simultaneously decrease the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the on-duty cycle of the pulse width modulation signal PWM.

[0082] In one or more embodiments, the control unit 800 can also be used to first adjust the on-duty cycle of the pulse width modulation signal PWM, and then further adjust the resistance value and / or capacitance value of the modulation unit 200, that is, further adjust the resistance value of the first resistor R1 and / or the capacitance value of the first capacitor C1.

[0083] In one or more embodiments, the control unit 800 can be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic devices, discrete gate logic devices, transistor logic devices and other logic control devices, or a microprocessor such as a micro control unit (MCU).

[0084] The RF signal modulation circuit 10 of the present application, through the above-mentioned structure, can make the on-duty cycle of the obtained target RF signal RF3 different from the on-duty cycle of the initial RF signal RF1, but the frequency of the target RF signal RF3 is still the same as the frequency of the initial RF signal RF1. It can also further change the on-duty cycle of the target RF signal RF3 through a variety of adjustment methods to accurately obtain the required on-duty cycle of the RF signal, so as to meet the on-duty cycle adjustment requirements of the RF signal and provide the RF signal with the required on-duty cycle.

[0085] See also Figure 5 , Figure 5 FIG. 1 is a block diagram of a radio frequency signal generating device in an embodiment of the present application. Figure 5 As shown, the present application further provides a radio frequency signal generating device 1000 , which includes the radio frequency signal modulation circuit 10 in any of the aforementioned embodiments.

[0086] Please refer again Figure 1 .like Figure 1 As shown, the RF signal modulation circuit 10 includes: a signal input terminal 100, a modulation unit 200, a pulse width modulation signal source 300, a rectifier unit 310, a comparison unit 400 and a signal output terminal 500. The signal input terminal 100 is used to input an initial RF signal RF1; the modulation unit 200 is connected to the signal input terminal 100 and is used to modulate the initial RF signal RF1 to obtain an intermediate RF signal RF2; the pulse width modulation signal source 300 is used to output a pulse width modulation signal PWM; the rectifier unit 310 is connected to the pulse width modulation signal source 300 and is used to rectify the pulse width modulation signal PWM to obtain a DC voltage signal DC; the comparison unit 400 includes two input terminals and an output terminal O1, the two input terminals are connected to the modulation unit 200 and the rectifier unit 310 respectively, and the comparison unit 400 is used to output a DC voltage signal DC. 00 is used to compare the intermediate RF signal RF2 with the DC voltage signal DC to obtain a target RF signal RF3, and output it through the output terminal O1, wherein the on-duty cycle of the target RF signal RF3 is different from the on-duty cycle of the initial RF signal RF1, and the frequency of the target RF signal RF3 is the same as the frequency of the initial RF signal RF1; the signal output terminal 500 is connected to the output terminal O1 of the comparison unit 400, and is used to output the target RF signal RF3; wherein the on-duty cycle of the target RF signal RF3 changes at least according to the change of the on-duty cycle of the pulse width modulation signal PWM.

[0087] The more specific structure of the RF signal modulation circuit 10 can be found in the relevant content of the RF signal modulation circuit 10 in any of the aforementioned embodiments, which will not be described in detail here.

[0088] like Figure 5As shown, the RF signal generating device 1000 may further include a crystal oscillator circuit 20, which is connected to the RF signal modulation circuit 10. The crystal oscillator circuit 20 is used to output an initial RF signal RF1. The RF signal generating device 1000 is used to be connected to a load RL to output a target RF signal RF3 to the load RL.

[0089] The crystal oscillator circuit 20 may be a quartz crystal oscillator having a piezoelectric effect. The generated initial radio frequency signal RF1 has a conduction duty cycle of 50% and is a square wave signal.

[0090] The RF signal modulation circuit 10 and the RF signal generating device 1000 of the present application, through the above-mentioned structure, can make the on-duty cycle of the obtained target RF signal RF3 different from the on-duty cycle of the initial RF signal RF1, but the frequency of the target RF signal RF3 is still the same as the frequency of the initial RF signal RF1. It is also possible to further change the on-duty cycle of the target RF signal RF3 through a variety of adjustment methods to accurately obtain the required on-duty cycle of the RF signal, so as to meet the on-duty cycle adjustment requirements of the RF signal and provide the RF signal with the required on-duty cycle for better output to the load RL.

[0091] See also Figure 6 , Figure 6 FIG. 1 is a block diagram of a radio frequency power supply device in an embodiment of the present application. Figure 6 As shown, the present application further provides a radio frequency power supply device 1, which includes the radio frequency signal generating device 1000 in any of the aforementioned embodiments.

[0092] Please refer again Figure 5 .like Figure 5 As shown, the radio frequency signal generating device 1000 includes a radio frequency signal modulation circuit 10 .

[0093] The more specific structure of the radio frequency signal generating device 1000 can be found in the relevant content of the radio frequency signal generating device 1000 in any of the aforementioned embodiments, which will not be repeated here.

[0094] In one or more embodiments, the RF power supply device 1 may also include a power supply device, an RF signal amplifying device, an RF signal detecting device, an impedance matching network and other devices. The RF power supply device 1 is used to be connected to the load RL to output an RF signal obtained based on the target RF signal RF3 to the load RL.

[0095] Among them, the RF signal generating device 1000 can be connected between the power supply device and the load RL. When the RF power supply device 1 includes a RF signal amplifying device, a RF signal detecting device, an impedance matching network and other devices, the RF power supply device 1 includes a RF signal amplifying device, a RF signal detecting device, an impedance matching network and other devices, which can be connected in sequence between the RF signal generating device 1000 and the load RL.

[0096] The RF signal modulation circuit 10, RF signal generating device 1000 and RF power supply device 1 of the present application, through the above-mentioned structure, can make the on-duty cycle of the obtained target RF signal RF3 different from the on-duty cycle of the initial RF signal RF1, but the frequency of the target RF signal RF3 is still the same as the frequency of the initial RF signal RF1. It is also possible to further change the on-duty cycle of the target RF signal RF3 through a variety of adjustment methods to accurately obtain the required on-duty cycle of the RF signal, so as to meet the on-duty cycle adjustment requirements of the RF signal and provide the RF signal with the required on-duty cycle for better output to the load RL.

[0097] The above description is only a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by any person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application; the embodiments of this application and the features of the embodiments can be combined with each other unless there is a conflict. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A radio frequency signal modulation circuit, characterized in that: include: A signal input terminal, used for inputting an initial radio frequency signal; a modulation unit connected to the signal input end, and configured to modulate the initial radio frequency signal to obtain an intermediate radio frequency signal; A pulse width modulation signal source, used for outputting a pulse width modulation signal; a rectifier unit connected to the pulse width modulation signal source, and configured to rectify the pulse width modulation signal to obtain a DC voltage signal; a comparison unit, comprising two input terminals and an output terminal, the two input terminals being connected to the modulation unit and the rectification unit, respectively, the comparison unit being configured to compare the intermediate RF signal with the DC voltage signal to obtain a target RF signal, and output the target RF signal through the output terminal, wherein an on-duty cycle of the target RF signal is different from an on-duty cycle of the initial RF signal, and a frequency of the target RF signal is the same as a frequency of the initial RF signal; a signal output terminal connected to the output terminal of the comparison unit, and configured to output the target radio frequency signal; wherein the on-duty cycle of the target radio frequency signal changes at least according to a change in the on-duty cycle of the pulse width modulation signal; The two input terminals of the comparison unit include a first input terminal and a second input terminal, the rectifier unit is connected to the second input terminal, the modulation unit includes a first resistor and a first capacitor, the first resistor and the first capacitor are sequentially connected in series between the signal input terminal and the ground, the first resistor has an adjustment terminal, the adjustment terminal of the first resistor is connected to the first input terminal, the first capacitor is used to charge during the high level duration of the initial RF signal and discharge during the low level duration of the initial RF signal, and the first resistor is used to affect the charging speed and the discharging speed of the first capacitor; When the adjustment end of the first resistor moves, the waveform parameters of the intermediate RF signal change accordingly, so that the on-duty cycle of the target RF signal changes; One end of the first resistor is connected to the signal input end, the other end of the first resistor is connected to one end of the first capacitor, and the other end of the first capacitor is grounded; when the adjustment end of the first resistor moves toward the one end of the first resistor, the on-duty cycle of the target RF signal increases, and when the adjustment end of the first resistor moves toward the other end of the first resistor, the on-duty cycle of the target RF signal decreases; The RF signal modulation circuit further includes a phase shift unit, which is connected between the comparison unit and the signal output end and is used to shift the phase of the target RF signal so that the phase difference with the initial RF signal is zero; wherein the phase shift angle of the phase shift unit is set according to the angle corresponding to the time when the first capacitor is charged to reach the voltage value of the DC voltage signal.

2. The radio frequency signal modulation circuit according to claim 1, wherein: The modulation unit is configured to perform waveform modulation on the initial RF signal to obtain an intermediate RF signal having a specific waveform, wherein, during at least a portion of a period within a cycle, a voltage value of the intermediate RF signal varies with time, and wherein the amplitude of the DC voltage signal varies according to a change in the on-duty cycle of the pulse width modulation signal, so that the on-duty cycle of the target RF signal varies.

3. The radio frequency signal modulation circuit according to claim 2, wherein: When the on-duty cycle of the pulse width modulation signal increases, the DC voltage signal increases accordingly, so that the on-duty cycle of the target radio frequency signal decreases; when the on-duty cycle of the pulse width modulation signal decreases, the DC voltage signal decreases accordingly, so that the on-duty cycle of the target radio frequency signal increases.

4. The radio frequency signal modulation circuit according to claim 3, characterized in that: The rectifier unit includes a first diode, the anode of the first diode is connected to the pulse width modulation signal source, the cathode of the first diode is connected to the second input end, and the first diode is a unidirectional conducting diode, which is used to rectify the pulse width modulation signal to obtain the DC voltage signal.

5. The radio frequency signal modulation circuit according to claim 3, wherein: The modulation unit includes a first resistor and a first capacitor, which are connected in series between the signal input terminal and the ground in sequence, and the connection point between the first resistor and the first capacitor is connected to the first input terminal, wherein the first capacitor is used to charge during the high level duration of the initial RF signal and discharge during the low level duration of the initial RF signal, and the first resistor is used to affect the charging speed and discharging speed of the first capacitor.

6. The radio frequency signal modulation circuit according to claim 3, characterized in that: The radio frequency signal modulation circuit further includes a filtering unit connected between the rectifying unit and the second input end, and configured to filter out an AC component from the DC voltage signal.

7. The radio frequency signal modulation circuit according to claim 3, wherein: The comparison unit includes an operational amplifier, wherein the first input terminal, the second input terminal, and the output terminal of the comparison unit are respectively the non-inverting input terminal, the inverting input terminal, and the output terminal of the operational amplifier. The operational amplifier is used to compare the intermediate RF signal with the DC voltage signal, and output a high level when the voltage value of the intermediate RF signal is greater than the voltage value of the DC voltage signal, and output a low level when the voltage value of the intermediate RF signal is less than the voltage value of the DC voltage signal, so as to obtain the target RF signal.

8. The radio frequency signal modulation circuit according to claim 1, wherein: The radio frequency signal modulation circuit further includes an isolation unit, which is connected between the signal input end and the modulation unit and is used to isolate the signal input end from the modulation unit.

9. A radio frequency signal generating device, characterized in that: The method comprises the radio frequency signal modulation circuit according to any one of claims 1 to 8.

10. A radio frequency power supply device, characterized in that: It comprises the radio frequency signal generating device as claimed in claim 9.

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