BGO scintillation material, its preparation method and application

Abstract

The present application relates to a kind of BGO scintillation material and its preparation method and application.The chemical general formula of the BGO scintillation material is Bi x Ge3O 6+1.5x Wherein 2≤x≤3.9999.

Description

Technical Field

[0001] This invention relates to a BGO scintillation material, its preparation method, and its applications, specifically to a method for reducing Bi content and enhancing Bi4Ge3O. 12 Materials with scintillation properties, their preparation methods, and applications belong to the field of scintillation materials technology. Background Technology

[0002] Inorganic scintillation materials are energy converters that can transform high-energy radiation (X-rays, gamma rays, etc.) into easily detectable photoelectric signals. Luminous intensity (photon yield) and resistance to radiation damage are important indicators for evaluating the performance of scintillation materials. Bi4Ge3O 12 (BGO) scintillation material is one of the most widely used scintillation materials, possessing a high density (7.13 g / cm³). 3 With its advantages such as extremely high gamma-ray detection efficiency and stable physicochemical properties, scintillators have important applications in space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety. In recent years, as the requirements for scintillation performance have continued to increase, researchers have focused on developing "better scintillators" with higher scintillation intensity and better resistance to radiation damage. For example, in the medical field, brighter and higher-resolution scintillators can enable medical imaging (such as computed tomography) to have higher resolution, lower radiation dose, and longer lifespan. Furthermore, radiation damage refers to the phenomenon that scintillators exhibit coloration, decreased transmittance, or reduced luminous efficiency after being exposed to a certain dose of radiation, mainly due to the formation of color centers. Therefore, effectively suppressing radiation damage while improving scintillation intensity is of great significance.

[0003] BGO belongs to self-activated luminescent materials, Bi 3+ Ions are optically active centers. Current methods for improving scintillation intensity and radiation damage resistance mainly include the growth of higher-quality materials (e.g., single crystals, controlled generation of defect sites) and elemental doping. However, high-quality crystal growth places stringent requirements on synthesis equipment and conditions, making it difficult to further improve its scintillation performance. Rare-earth element doping, on the other hand, easily alters its luminescence properties; Okazaki et al. reported that doping with ions such as Pr... 3+ Ions can generate new ff transitions resulting in red emission, introducing a slow decay component that affects scintillation performance (Radiat.Meas. 2022, 154, 106773). Furthermore, for example, Xie Youyu et al. found that europium-doped BGO showed significantly improved irradiation damage compared to pure BGO crystals; however, the presence of afterglow in its fluorescence decay limited its practical application (Nucl.Instrum.Methods Phys.Res.,Sect.A 1990, 297, 163). JB Shim et al. reported on Eu doping...3+ Although ions will produce origin from 5 D 0,1 -7F x The (x=0–6) radiative transition produces orange-red light emission in the 580–710 nm range, but this does not match the detection wavelength of the PMT (J. Appl. Phys. 2003, 93, 5131). Arslanlar et al. produced a wide emission range of 500–2000 nm by doping BGO with three rare-earth ions, Eu, Tm, and Nd (Spectrosc. Lett. 2013, 46, 590). This demonstrates that most dopants introduce new luminescent centers, resulting in emission at other wavelengths such as red and near-infrared light, all of which are mismatched with the detection wavelength of the PMT, thus affecting its detection performance. Summary of the Invention

[0004] To overcome the shortcomings of existing technologies, the present invention aims to provide a method for reducing Bi content and enhancing Bi4Ge3O. 12 Materials with scintillation properties, their preparation methods, and applications have led to the creation of new scintillation materials with excellent luminescence intensity and radiation damage resistance, better meeting the application needs in fields such as space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety.

[0005] In a first aspect, the present invention provides a BGO scintillation material, wherein the chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x , where 2≤x≤3.9999.

[0006] This invention marks the first discovery that Bi and O form [BiO6] polyhedra in BGO scintillation materials. On the one hand, reducing the Bi content will lead to the formation of Bi in the material. 3+ Hole defects increase the pathway for hole generation through thermal activation, leading to enhanced electron-hole recombination luminescence and thus improved luminescence performance. Regarding radiation damage resistance, oxygen vacancies are precursors to color center formation; they are electron-trapping defects that cause radiation damage. Bi vacancies, acting as hole traps, do not form electron color centers and may therefore improve radiation damage resistance. On the other hand, high concentrations of Bi ions in the matrix can easily cause luminescence quenching. Reducing the Bi content can suppress or reduce concentration quenching, thereby enhancing luminescence. Therefore, improving the luminescence performance and radiation resistance of BGO by reducing the Bi content is of great significance.

[0007] The better option is 3 ≤ x ≤ 3.8.

[0008] Preferably, the morphology of the BGO scintillation material is either scintillation polycrystalline powder, scintillation opaque ceramic, scintillation transparent ceramic, or scintillation single crystal.

[0009] Preferably, when the BGO scintillation material is a scintillation polycrystalline powder, the particle size of the BGO scintillation material is 500 nm to 5 μm.

[0010] Preferably, when the BGO scintillation material is a scintillation transparent glass, the relative density of the BGO scintillation material is 96-98%, and the transmittance in the 400-800nm ​​wavelength band is 60-98%.

[0011] Preferably, when the BGO scintillation material is a microcrystalline glass, the transmittance of the BGO scintillation material in the 400-800 nm wavelength band is 0-50%.

[0012] Secondly, this invention provides a method for preparing a BGO scintillation material, wherein the BGO scintillation material is a scintillation polycrystalline powder, and the general chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x , where 2≤x≤3.9999;

[0013] The method for preparing the scintillation polycrystalline powder includes:

[0014] (1) Weigh out bismuth oxide and germanium oxide according to the stoichiometric ratio and mix them to obtain a mixed powder;

[0015] (2) The mixed powder is placed directly into a muffle furnace and calcined at 500-1100°C in air for 5-100 hours. After cooling, the scintillation polycrystalline powder is obtained.

[0016] Thirdly, this invention provides a method for preparing a BGO scintillation material, wherein the BGO scintillation material is a scintillation transparent glass, and the general chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x , where 2≤x≤3.9999;

[0017] The method for preparing the scintillation transparent glass includes:

[0018] (1) Weigh out bismuth oxide and germanium oxide according to the stoichiometric ratio and mix them to obtain a mixed powder;

[0019] (2) The mixed powder is placed directly into a muffle furnace and calcined at 500-1100°C in air for 5-100 hours. After cooling, the scintillation polycrystalline powder is obtained.

[0020] (3) After pressing the obtained scintillation polycrystalline powder into shape, it is calcined in an air or vacuum atmosphere in an air suspension furnace at 500-1100°C for 1-30 minutes, and then annealed and calcined in a muffle furnace at 450-525°C for 1-10 hours. After cooling, the scintillation transparent glass is obtained.

[0021] Fourthly, the present invention provides a method for preparing a BGO scintillation material, wherein the BGO scintillation material is a microcrystalline glass, and the general chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x , where 2≤x≤3.9999;

[0022] The method for preparing the microcrystalline glass includes:

[0023] (1) Weigh out bismuth oxide and germanium oxide according to the stoichiometric ratio and mix them to obtain a mixed powder;

[0024] (2) The mixed powder is placed directly into a muffle furnace and calcined at 500-1100°C in air for 5-100 hours. After cooling, the scintillation polycrystalline powder is obtained.

[0025] (3) The obtained scintillation polycrystalline powder is placed in a muffle furnace and heated to 900-1100°C in an air atmosphere. The temperature is maintained for 0.5-5 hours. The powder is then immediately removed and poured onto an aluminum foil to obtain unprecipitated glass. The obtained glass is then annealed and calcined in a muffle furnace at 525-600°C for 1-10 hours. After cooling, the scintillation microcrystalline glass is obtained.

[0026] Fifthly, this invention provides an application of BGO scintillation material in the fields of radiation detection, space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety. In this invention, the material whose BGO scintillation performance is enhanced by reducing the Bi content exhibits excellent luminescence intensity and radiation damage resistance, better meeting the application requirements in fields such as space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety.

[0027] In practical applications, the material with reduced Bi content that enhances BGO scintillation performance can be coupled with one of PMT, PD, or CMOS detectors to form a small detection module. The module can be assembled into a two-dimensional or three-dimensional detection array according to the actual application requirements. The reduction of Bi content will result in stronger luminescence after passing through the detection module under the action of rays of the same energy, that is, a stronger signal. At the same time, the reduction of Bi content can reduce the mass of the detection module, which is beneficial to miniaturization and convenience. Based on this, high-energy cosmic rays, dark matter, or high-energy particles interact with the detection array module and are recorded.

[0028] Beneficial effects:

[0029] 1) This invention provides a material composition design and technical solution for reducing Bi content and enhancing BGO scintillation performance. The preparation process is simple, the preparation conditions are easy to control, and it is easy to achieve large-scale production, which is economically beneficial.

[0030] 2) In this invention, the luminescence performance of the BGO scintillation material is significantly improved after the Bi content is reduced, the fluorescence emission intensity or X-ray excitation emission intensity is strengthened, the resistance to radiation damage is enhanced, and no new emission peak position is introduced.

[0031] 3) This invention has significant practical application value in fields such as space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety. Attached Figure Description

[0032] Figure 1 To regulate Bi concentration x Ge3O 12 Images of a high-throughput sample library of polycrystalline powder (2.4≤x≤5.05) scintillation materials (A), an image of their emission under 254nm mercury lamp excitation (B), and the specific components in the high-throughput sample library (A) (C).

[0033] Figure 2 Bi with reduced Bi concentration prepared in Comparative Example 1 and Examples 2-4 x Ge3O 12 X-ray diffraction (XRD) patterns of polycrystalline powder (x = 4.0, 3.7, 3.6, and 3.5) scintillation materials, with Bi4Ge3O inserted at the bottom. 12 Standard X-ray diffraction pattern of the phase.

[0034] Figure 3 Bi with reduced Bi concentration prepared in Comparative Example 1 and Examples 2-4 x Ge3O 12 The emission spectra of polycrystalline powder (x = 4.0, 3.7, 3.6 and 3.5) scintillation materials under 267 nm ultraviolet light excitation.

[0035] Figure 4 Bi with reduced Bi concentration prepared in Comparative Example 1 and Examples 2-4 x Ge3O 12 The emission spectra of polycrystalline powder (x = 4.0, 3.7, 3.6 and 3.5) scintillation materials under X-ray excitation.

[0036] Figure 5 The emission spectra of the reduced Bi content BGO transparent glass (x = 4 and 3.6) scintillation material prepared in Example 5 under X-ray excitation.

[0037] Figure 6 The emission spectra of the reduced Bi content BGO microcrystalline glass (x = 4 and 3.6) scintillation materials prepared in Example 6 under X-ray excitation.

[0038] Figure 7 The Bi with reduced Bi concentration obtained in Example 3x Ge3O 12 The emission spectra of polycrystalline powder (x = 3.6) after irradiation with a mercury lamp for different times were used to evaluate its resistance to radiation damage.

[0039] Figure 8 Bi with reduced Bi concentration obtained in Comparative Example 1 x Ge3O 12 The emission spectra of polycrystalline powder (x = 4.0) after irradiation with a mercury lamp for different times were used to evaluate its resistance to radiation damage.

[0040] Figure 9 Bi with reduced Bi concentration obtained in Comparative Example 1 and Example 3 x Ge3O 12 A trend graph showing the change of spectral integral area of ​​polycrystalline powder (x = 4.0 (left bar chart) and x = 3.6 (right bar chart)) with irradiation time. Detailed Implementation

[0041] The present invention will be further illustrated by the following embodiments. It should be understood that the following embodiments are for illustrative purposes only and are not intended to limit the present invention.

[0042] In this invention, a method for reducing Bi content and enhancing Bi4Ge3O 12 The material with scintillation properties, wherein the molar number x of Bi ions ranges from 3.9999 to 2, preferably from 3 to 3.8, and more preferably from 3.4 to 3.8.

[0043] The present invention will be further illustrated by the following examples. The following exemplifies the method of reducing Bi content and enhancing Bi4Ge3O provided by the present invention. 12 A method for preparing scintillation materials with enhanced scintillation properties, wherein the resulting material with reduced Bi content and enhanced BGO scintillation properties is a polycrystalline powder, ceramic, or single crystal. The ceramic includes both opaque and transparent ceramics.

[0044] Bismuth oxide and germanium oxide were selected as raw materials according to the molar ratio of Bi:Ge = x:3 and mixed evenly to obtain a mixed powder.

[0045] Polycrystalline powder preparation. The mixed powder was placed directly into a muffle furnace and calcined at 500-1100℃ in air for 5-100 hours. After cooling, BixGe3O12 matrix polycrystalline powder was obtained.

[0046] Ceramic preparation. The obtained mixed powder is pressed into blocks under a pressure of 0.01-5 GPa, and then calcined at 500-1100℃ for 5-100 hours to obtain ceramics, or transparent ceramics are prepared by controlling the sintering process. Hot pressing sintering or vacuum sintering techniques are used to prepare transparent ceramics. The sintering temperature can be 700-1100℃, and the time can be 10-80 hours. The preferred pressing pressure is 0.01-5 GPa.

[0047] Single crystal preparation. At least one of polycrystalline powder, transparent ceramic powder, or mixed powder is used as a raw material, poured into a container, heated and melted, and then slowly crystallized from the melt to prepare a single crystal. Specific methods include the Czochralski method or the crucible lowering method.

[0048] Alternatively, the ceramics and single crystals obtained above can also be crushed and ground into polycrystalline powder.

[0049] In this invention, the novel scintillation material with reduced Bi content and enhanced BGO scintillation performance is characterized by a simple preparation process, easily controllable preparation conditions, and ease of large-scale production. Reducing the Bi content significantly improves the luminescence performance of the BGO scintillation material, resulting in stronger fluorescence emission intensity or X-ray excited emission intensity, enhanced resistance to radiation damage, and the absence of introduced new emission peaks. The reduced-Bi content BGO scintillation material obtained in this invention, when prepared as single crystals or ceramics, can be widely applied in fields such as space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety.

[0050] The following examples further illustrate the present invention in detail. It should also be understood that the following examples are only for further explanation of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-essential improvements and adjustments made by those skilled in the art based on the above description of the present invention are within the scope of protection of the present invention. The specific process parameters, etc., in the following examples are merely examples within a suitable range; that is, those skilled in the art can make appropriate selections within the appropriate range based on the description herein, and are not intended to be limited to the specific values ​​in the examples below.

[0051] Example 1 (Preparation of Bi) x Ge3O 12 A high-throughput sample library of polycrystalline powders is used for rapid screening of suitable components.

[0052] According to the molar ratio of Bi:Ge = x:3 (equivalent to Bi doping amount 2.4 ≤ x ≤ 5.05, with an interval of 0.05), 0.5 mol / L bismuth nitrate and 0.5 mol / L germanium oxide dissolved in ammonia solution were selected as raw materials, as shown in the table below. The solution was rapidly added dropwise using a high-throughput synthesis instrument for composite materials, and ultrasonically mixed and dried at 80℃ for 2 hours to obtain a uniformly mixed gel sample. The powder was then placed in a muffle furnace and sintered at 600℃ for 2 hours in air atmosphere to decompose the nitrate and ammonium salts into oxides. The powder was then ground in a micro-reaction hole with a glass rod for 30 minutes to obtain a uniformly mixed powder. After sintering at 900℃ for 6 hours in air atmosphere and cooling, Bi was obtained. x Ge3O 12 A high-throughput sample library of polycrystalline powders (2.4≤x≤5.05), such as... Figure 1 As shown, the scintillation material prepared in this embodiment exhibits Bi ion emission under 254nm ultraviolet light excitation. Furthermore, when the Bi content x < 4.0, the luminescence intensity is significantly greater than when x = 4, indicating that reducing the Bi content enhances the luminescence performance of BGO. Therefore, 3.45 ≤ x ≤ 3.65 is the optimal range.

[0053] Example 2 (Preparation of Bi) 3.7 Ge3O 12 Polycrystalline powder)

[0054] Based on Example 1, a concentration was selected for solid-state synthesis on a large scale. Bismuth oxide and germanium oxide were selected as raw materials according to the molar ratio of Bi:Ge:Mn = 3.7:3 (equivalent to a Bi doping amount x = 3.7). Ethanol was added and the mixture was thoroughly ground in an agate mortar for 1 hour to obtain a homogeneous powder. The powder was then placed in a muffle furnace and sintered at 900°C for 6 hours in air. After cooling, Bi was obtained. 3.7 Ge3O 12 (x = 3.7) Polycrystalline powder. The synthesized powder has high crystallinity, see... Figure 3 The XRD diffraction phase analysis results are shown. The detection revealed that the scintillation material prepared in this embodiment exhibits characteristic emission of Bi ions under 276 nm ultraviolet light excitation, with an emission peak at 455 nm. Figure 4 The emission spectrum analysis results are shown. Under X-ray excitation, its emission peak is at 482 nm. Figure 3 The X-ray excitation spectral analysis results are shown. Furthermore, the luminescence intensity of both ultraviolet and X-ray excitation is enhanced compared to Comparative Example 1.

[0055] Example 3 (Preparation of Bi) 3.6 Ge3O 12 Polycrystalline powder)

[0056] In Example 3, the preparation process of the BGO scintillation material with reduced Bi content is the same as in Example 2, except that x = 3.6. The synthesized powder has high crystallinity. Figure 2 The XRD diffraction phase analysis results are shown. The detection revealed that the scintillation material prepared in this embodiment exhibits characteristic emission of Bi ions under 276 nm ultraviolet light excitation, with an emission peak at 455 nm. Figure 3 The emission spectrum analysis results are shown. Under X-ray excitation, its emission peak is at 482 nm. Figure 4 The X-ray excitation spectral analysis results are shown. The luminescence intensity is significantly enhanced compared to Comparative Example 1. Furthermore, the luminescence intensity of both ultraviolet excitation and X-ray excitation is significantly enhanced compared to Comparative Example 1.

[0057] Example 4 (Preparation of Bi) 3.5 Ge3O 12 Polycrystalline powder)

[0058] The preparation process of the BGO scintillation material with reduced Bi content in Example 4 is the same as in Example 2, except that x = 3.5. The synthesized powder has high crystallinity. Figure 2 The XRD diffraction phase analysis results are shown. The detection revealed that the scintillation material prepared in this embodiment exhibits characteristic emission of Bi ions under 276 nm ultraviolet light excitation, with an emission peak at 455 nm. Figure 3 The emission spectrum analysis results are shown. Under X-ray excitation, its emission peak is at 482 nm. Figure 4 The X-ray excitation spectral analysis results are shown. The luminescence intensity is significantly enhanced compared to Comparative Example 1. Furthermore, the luminescence intensity of both ultraviolet excitation and X-ray excitation is significantly enhanced compared to Comparative Example 1.

[0059] Example 5 (Preparation of Bi) 3.6 Ge3O 12 (transparent glass)

[0060] Bismuth oxide and germanium oxide were selected as raw materials according to the molar ratio of Bi:Ge = 3.6:3 (equivalent to Bi doping amount x = 3.6). Ethanol was added and the mixture was thoroughly ground in an agate mortar for 1 hour to obtain a uniform powder. The mixture was then pressed into blocks under a pressure of 10 MPa and calcined in an air-suspended furnace at 500–1300 °C for 2 minutes. Following this, it was annealed and calcined in a muffle furnace at 500 °C for 1.5 hours. After cooling, the scintillation transparent glass was obtained. The transmittance of this BGO scintillation material in the 400–800 nm wavelength range is 95%–98%. Testing revealed that the scintillation material prepared in this embodiment has an emission spectrum peak at 484 nm under X-ray excitation, exhibiting high luminescence intensity. Figure 6 The emission spectrum analysis results are shown.

[0061] Example 6 (Preparation of Bi) 3.6 Ge3O 12 Microcrystalline glass)

[0062] Bismuth oxide and germanium oxide were selected as raw materials according to the molar ratio of Bi:Ge = 3.6:3 (equivalent to Bi doping amount x = 3.6). Ethanol was added and the mixture was thoroughly ground in an agate mortar for 1 hour to obtain a homogeneous powder. The powder was then placed directly into a muffle furnace and calcined at 900°C for 6 hours in air. After cooling, the scintillation polycrystalline powder was obtained. The obtained scintillation polycrystalline powder was placed in a muffle furnace and heated to 1050°C in air, held for 0.5 hours, and immediately poured onto aluminum foil to obtain unprecipitated glass. The glass was then annealed and calcined at 550°C in a muffle furnace for 2 hours. After cooling, the scintillation microcrystalline glass was obtained. The transmittance of this BGO scintillation material in the 400-800nm ​​wavelength range was 2%-5%. Detection showed that the scintillation material prepared in this embodiment had an emission spectrum peak at 484nm under X-ray excitation, exhibiting high luminescence intensity. Figure 6 The emission spectrum analysis results are shown.

[0063] Comparative Example 1

[0064] Bismuth oxide and germanium oxide were selected as raw materials according to the molar ratio of Bi:Ge = 4:3 (equivalent to a reduction of 0 in Bi). Ethanol was added and the mixture was thoroughly ground in an agate mortar for 1 hour to obtain a homogeneous powder. The powder was then placed in a muffle furnace and sintered at 900°C for 6 hours in air. After cooling, Bi₄Ge₃O₃ was obtained. 12 Matrix polycrystalline powder. The synthesized powder has high crystallinity, see... Figure 1 The XRD diffraction phase analysis results are shown. The detection revealed that the scintillation material prepared in this embodiment exhibits characteristic emission of Bi ions under 276 nm ultraviolet light excitation, with an emission peak at 455 nm. Figure 2 The emission spectrum analysis results are shown. Under X-ray excitation, its emission spectrum peak is located at 484 nm, exhibiting high luminescence intensity.

[0065] Figure 1 To regulate Bi concentration x Ge3O 12 Images of a high-throughput sample library of polycrystalline powder (2.4≤x≤5.05) scintillation materials and images of their emission under 254nm mercury lamp excitation. The images clearly show that reducing the Bi content significantly enhances the luminescence intensity.

[0066] Figure 2The X-ray diffraction (XRD) patterns of the reduced Bi content BGO polycrystalline powders (x = 4, 3.7, 3.6, and 3.5%) scintillation materials prepared in Comparative Examples 1 and Examples 2-4 are shown, with Bi4Ge3O inserted at the bottom of the figures. 12 The standard X-ray diffraction spectrum of the phase shows that the diffraction peaks of the synthesized sample correspond well with the standard card, indicating that the synthesized sample is a pure phase.

[0067] Figure 3 The emission spectra of the reduced Bi content BGO polycrystalline powder (x = 4, 3.7, 3.6 and 3.5%) scintillation materials prepared in Comparative Example 1 and Examples 2-4 under 267 nm ultraviolet light excitation are shown in the figure. It can be seen from the figure that the emission peak is located in a broad spectrum at 455 nm, and the emission intensity first increases and then decreases with the doping concentration.

[0068] Figure 4 The figures show the emission spectra of the reduced Bi content BGO polycrystalline powder (x = 4, 3.7, 3.6 and 3.5%) scintillation materials prepared in Comparative Example 1 and Examples 2-4 under X-ray excitation. It can be seen from the figures that the emission peak is located in a broad spectrum at 484 nm, and the reduction of Bi content significantly enhances the X-ray excitation emission intensity.

[0069] Figure 5 The figure shows the emission spectra of the reduced Bi content BGO transparent glass (x=4 and 3.6) scintillation material prepared in Example 5 under X-ray excitation. It can be seen from the figure that its emission peak is located in a broad spectrum at 484 nm, and the reduction of Bi content significantly enhances the X-ray excitation emission intensity.

[0070] Figure 6 The figure shows the emission spectra of the reduced Bi content BGO microcrystalline glass (x=4 and 3.6) scintillation material prepared in Example 6 under X-ray excitation. It can be seen from the figure that its emission peak is located in a broad spectrum at 484 nm, and the reduction of Bi content significantly enhances the X-ray excitation emission intensity.

[0071] Figure 7-9 Bi with reduced Bi concentration obtained in Comparative Example 1 and Example 3 x Ge3O 12 The emission spectra of polycrystalline powders (x = 4.0 and 3.6) after irradiation with a UV mercury lamp for different times show that the sample with reduced Bi content has significantly enhanced resistance to radiation damage, and the intensity is still more than 80% of the initial intensity after 50 hours of irradiation.

[0072] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A BGO scintillation material, characterized in that, The chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x Where 2≤x≤3.9999; the BGO scintillation material is in the form of scintillation transparent glass or scintillation microcrystalline glass; when the BGO scintillation material is scintillation transparent glass, the relative density of the BGO scintillation material is 96-98%, and the transmittance in the 400-800nm ​​band is 60-98%; when the BGO scintillation material is scintillation microcrystalline glass, the transmittance of the BGO scintillation material in the 400-800nm ​​band is 0-50%.

2. The BGO scintillation material according to claim 1, characterized in that, 3≤x≤3.8。 3. A method for preparing a BGO scintillation material, characterized in that, The BGO scintillation material is a scintillation transparent glass, and the general chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x , where 2≤x≤3.9999; The method for preparing the scintillation transparent glass includes: (1) Weigh out bismuth oxide and germanium oxide according to the stoichiometric ratio and mix them to obtain a mixed powder; (2) The mixed powder is directly placed into a muffle furnace and calcined at 500-1100°C in air for 5-100 hours. After cooling, the scintillation polycrystalline powder is obtained. (3) After pressing the obtained scintillation polycrystalline powder into shape, it is calcined in an air or vacuum atmosphere in an air suspension furnace at 500-1300°C for 1-30 minutes, and then annealed and calcined in a muffle furnace at 450-525°C for 1-10 hours. After cooling, the scintillation transparent glass is obtained.

4. A method for preparing a BGO scintillation material, characterized in that, The BGO scintillation material is a scintillation microcrystalline glass, and the general chemical formula of the BGO scintillation material is Bi. x Ge3O 6+1.5x , where 2≤x≤3.9999; The method for preparing the scintillation microcrystalline glass includes: (1) Weigh out bismuth oxide and germanium oxide according to the stoichiometric ratio and mix them to obtain a mixed powder; (2) The mixed powder is directly placed into a muffle furnace and calcined at 500-1100°C in air for 5-100 hours. After cooling, the scintillation polycrystalline powder is obtained. (3) The obtained scintillation polycrystalline powder is placed in a muffle furnace and heated to 900-1100°C in an air atmosphere. The temperature is maintained for 0.5-5 hours. The powder is then immediately removed and poured onto an aluminum foil to obtain unprecipitated glass. The obtained glass is then annealed and calcined in a muffle furnace at 525-600°C for 1-10 hours. After cooling, the scintillation microcrystalline glass is obtained.

5. The application of the BGO scintillation material as described in claim 1 or 2 in the fields of X-ray detection, space exploration, medical imaging, non-destructive testing, high-energy physics, and nuclear safety.

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