A semiconductor wafer annealing furnace based on a new chamber structure

Abstract

The present application discloses a semiconductor wafer annealing furnace based on a novel chamber structure, including an annealing chamber, a chamber door, and an installation chamber installed on the top of the annealing chamber, wherein the annealing chamber has an annealing cavity, the installation chamber has an installation cavity, a wafer carrier and a heating lamp panel are fixedly installed in the annealing cavity, a movable unit is also installed in the annealing cavity, and a driving unit is installed in the installation cavity. The semiconductor wafer annealing furnace of the present application can reflect the heat radiated outward from the circumference of the heating lamp panel by setting a thermal radiation reflection unit, so that the circumferential temperature of the heating lamp panel is not easy to radiate outward, and better heating compensation is achieved for the edge of the wafer, avoiding uneven heating caused by faster heat dissipation at the edge of the wafer relative to the center of the wafer, and the height of the thermal radiation reflection unit can be adjusted, so the reflection effect of the thermal radiation at the edge of the heating lamp panel can be adjusted, and the first and second reflection units themselves have a limit matching structure to avoid incorrect temperature compensation.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor wafer processing equipment, and more specifically, to a semiconductor wafer annealing furnace based on a novel chamber structure. Background Art

[0002] Semiconductor wafer annealing furnace is a device used for rapid heat treatment of semiconductor wafers. In the annealing furnace equipment, halogen infrared lamps are usually used as heat sources. Most of the heat is transferred to the wafer by radiation. Through an extremely fast heating rate, the wafer is heated to the required temperature in a very short time to repair the damage caused by ion implantation and improve the quality of the wafer.

[0003] In the existing semiconductor wafer annealing furnace, since the wafer is round and the interior of the reaction chamber is mostly designed symmetrically, many heating lamp panels adopt a concentric circle distribution method to cope with the shape of the wafer. Although such a distribution method is adopted, since the heat dissipation of the outer edge of the wafer is faster than that of the center of the wafer, there will be uneven heating during the heating process. Therefore, in some heating lamp panels, the lamps on the outer edge of the wafer are closer to the wafer than the lamps on the inner edge. The main purpose is to increase the efficiency of thermal radiation to compensate for the heat loss caused by the larger heat dissipation area of ​​the outer edge of the wafer. However, there is a problem with this compensation method. Once the heating lamp panel is installed, the compensation effect it brings is determined and cannot be adjusted later. However, after the equipment is used for a period of time, the aging and loss of different parts are different. Therefore, the temperature difference caused by the different heat dissipation characteristics of the center and edge of the heating area will also change with the use of the equipment. In addition, in some cases, the characteristics of wafers from different batches are also different. Therefore, this unchangeable temperature compensation method has certain defects in adjusting the heating temperature of the wafer. Summary of the invention

[0004] The present invention aims to overcome the defects of the prior art and provide a semiconductor wafer annealing furnace based on a novel chamber structure.

[0005] In order to achieve the above-mentioned purpose, the present invention provides the following technical solutions: a semiconductor wafer annealing furnace, comprising an annealing chamber, a cabin door installed at the annealing chamber, and an installation chamber installed on the top of the annealing chamber, the annealing chamber having a feed port, the cabin door being capable of closing the feed port, the annealing chamber having an annealing cavity, the installation chamber having an installation cavity, the annealing chamber being connected to a gas supply unit, the gas supply unit being used to supply working gas to the annealing chamber, a wafer carrier and a heating lamp panel being fixedly installed in the annealing cavity, a movable unit being further installed in the annealing cavity, the movable unit comprising a heat radiation reflecting unit, and a driving unit capable of driving the movable unit to rise and fall being installed in the installation cavity.

[0006] Furthermore, a plurality of pyrometers are installed below the wafer stage.

[0007] The temperature is thus measured by means of a pyrometer.

[0008] Furthermore, the heating lamp panel is circular, and a plurality of heating lamps are installed on the heating lamp panel. The heating lamps except the heating lamp located at the center of the circle are divided into multiple circles, and the multiple heating lamps in the same circle are distributed in a circular shape with equal spacing.

[0009] The heating lamps can thus be distributed according to the shape of the wafer.

[0010] Furthermore, a circular cylindrical enclosing unit surrounding the heating lamp panel is fixedly installed on the heating lamp panel, and a plurality of vertical first limiting slide grooves and a plurality of vertical second limiting slide grooves are provided on the outer circumferential surface of the enclosing unit; the heat radiation reflecting unit is divided into a circular first reflecting unit and a circular second reflecting unit, and the lower surfaces of the first reflecting unit and the second reflecting unit are both reflecting surfaces, and the first reflecting unit is connected to a plurality of first limiting slide blocks matched with the first limiting slide groove, and the second reflecting unit is connected to a plurality of L-shaped rods, and the end of each L-shaped rod is connected to a second limiting slide block matched with the second limiting slide groove; the upper part of the enclosing unit is provided with a first lifting ring and a first lifting ring located at the first lifting ring. A second lifting ring above the ring, each first limit slider and the first lifting ring are connected by a first vertical rod, each second limit slider and the second lifting ring are connected by a second vertical rod, the first lifting ring has a plurality of through holes passed by the second vertical rod; the first lifting ring is connected to a lifting annular plate through a plurality of first radial rods, the lifting annular plate is connected to a first lifting rod, the second lifting ring is connected to a lifting circular plate through a plurality of second radial rods, the lifting circular plate is connected to a second lifting rod, the driving unit includes a first electric telescopic rod connected to the first lifting rod for driving the first lifting rod to lift and a second electric telescopic rod connected to the second lifting rod for driving the second lifting rod to lift and lift.

[0011] Thus, the first lifting rod is driven to rise and fall by the first electric telescopic rod, thereby driving the first lifting ring to rise and fall, so that the first reflecting unit can be raised and lowered, and the second lifting rod is driven to rise and fall by the second electric telescopic rod, thereby driving the second lifting ring to rise and fall, so that the second reflecting unit can be raised and lowered, so that the heights of the first and second reflecting units can be adjusted, and then the reflecting effect can be adjusted.

[0012] Furthermore, the first electric telescopic rod and the first lifting rod each have two and they correspond one to one; the second electric telescopic rod and the second lifting rod each have two and they correspond one to one.

[0013] Therefore, the first and second reflecting units are more stable when they are raised and lowered.

[0014] Furthermore, an insulation plate is installed in the annealing chamber, and the insulation plate has a first through hole passed by the first lifting rod and a second through hole passed by the second lifting rod; the top of the annealing chamber has a third through hole passed by the movable rod of the first electric telescopic rod and a fourth through hole passed by the movable rod of the second electric telescopic rod.

[0015] Insulation is provided by the insulation board to avoid heat loss.

[0016] Further, there are two of each of the first through-hole, the second through-hole, the third through-hole and the fourth through-hole.

[0017] Furthermore, a sealing and heat-insulating unit is installed between the first through-hole and the first lifting rod, and the first lifting rod can be displaced relative to the sealing and heat-insulating unit.

[0018] Furthermore, a sealing and heat-insulating unit is installed between the second through-hole and the second lifting rod, and the second lifting rod can be displaced relative to the sealing and heat-insulating unit.

[0019] Furthermore, a sealing and heat-insulating unit is installed between the movable rod of the first electric telescopic rod and the third through hole, and the movable rod of the first electric telescopic rod can be displaced relative to the sealing and heat-insulating unit.

[0020] Furthermore, a sealing and heat-insulating unit is installed between the movable rod of the second electric telescopic rod and the fourth through hole, and the movable rod of the second electric telescopic rod can be displaced relative to the sealing and heat-insulating unit.

[0021] This achieves better thermal insulation of the installation cavity.

[0022] Furthermore, the first reflecting unit and the second reflecting unit are both horn-shaped; and the power of each heating lamp can be independently controlled.

[0023] The horn-shaped reflective unit ensures that the compensation effect meets the actual compensation needs.

[0024] Furthermore, the first reflecting unit has a plurality of grooves at its outer edge, the top of the grooves are open and the bottom is closed, and the second reflecting unit has a plurality of limit blocks at its inner edge, the number of the limit blocks is equal to the number of the grooves and the two correspond one to one.

[0025] By cooperating between the limiting block and the groove portion, the first and second reflecting units are well limited, thereby preventing the second reflecting unit from being located below the first reflecting unit.

[0026] Furthermore, the first reflecting unit and the second reflecting unit can be in a mating state and a separating state, in which, in the mating state, each limit block is embedded in the corresponding groove portion; in the separating state, each limit block is not embedded in the corresponding groove portion, and each limit block is located above the corresponding groove portion.

[0027] Therefore, in the matched state, heat can be compensated in a larger radius. In the separated state, the second reflective unit is actually almost not involved in heat compensation due to its higher position.

[0028] Further, the outer edge of the first reflective unit is a vertical circumferential surface, the inner edge of the second reflective unit is a vertical circumferential surface, and the outer diameter of the first reflective unit is equal to the inner diameter of the second reflective unit.

[0029] Therefore, when the first and second reflecting units are in a matched state, they fit more closely.

[0030] Furthermore, the number of the first limiting sliding grooves is 6 and they are distributed in a circular shape with equal intervals.

[0031] Furthermore, the number of the first limit sliding blocks is 6 and they are distributed in a ring shape with equal intervals.

[0032] Furthermore, the number of the second limiting sliding grooves is 6, and they are distributed in a circular shape with equal intervals.

[0033] Furthermore, the number of the second limit sliding blocks is 6, and they are distributed in a ring shape with equal intervals.

[0034] Furthermore, the top end of the first limiting sliding groove is open and the bottom end is closed.

[0035] Furthermore, the second limiting sliding groove has an open top and a closed bottom.

[0036] Furthermore, the number of the first vertical rod, the second vertical rod and the through holes are all 6.

[0037] Preferably, the surrounding unit is made of quartz material.

[0038] Thereby the surrounding unit has high temperature resistance.

[0039] Furthermore, the working gas is nitrogen.

[0040] Oxygen is purged by nitrogen, protecting the wafer from oxidation reactions at high temperatures.

[0041] Furthermore, the surrounding unit is fixedly installed in the annealing chamber through the surrounding unit installation structure, so that the surrounding unit and the heating lamp panel can be fixedly installed in the annealing chamber as a whole.

[0042] In other embodiments, the heating lamp panel is fixedly installed in the annealing chamber through a lamp panel installation structure, so that the surrounding unit and the heating lamp panel can be fixedly installed in the annealing chamber as a whole.

[0043] Beneficial effects:

[0044] 1. The semiconductor wafer annealing furnace of the present application can reflect the heat radiated outward from the circumference of the heating lamp panel by setting a thermal radiation reflection unit, so that the temperature in the circumferential direction of the heating lamp panel is not easy to radiate outward, thereby achieving better heating compensation for the edge of the wafer, and thus avoiding uneven heating caused by faster heat dissipation at the edge of the wafer relative to the center of the wafer.

[0045] 2. The heat radiation reflection unit provided in the present application can be adjusted in height and has two reflection units, so the reflection effect of the heat radiation at the edge of the heating lamp panel can be adjusted within a wide adjustment range.

[0046] 3. The first and second reflecting units provided in the present application have a limiting matching structure, which can prevent the second reflecting unit from being located below the first reflecting unit, thereby avoiding incorrect temperature compensation caused by a gap formed between the second reflecting unit and the surrounding unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Schematic diagram of annealing furnace;

[0048] Figure 2 This is a schematic diagram of the positions of the first and second reflection units and the heating lamp panel in the matching state, and the limit block is at the bottom end of the groove portion at this time;

[0049] Figure 3 for Figure 2 Schematic diagram from another perspective;

[0050] Figure 4 This is a schematic diagram of the positions of the first and second reflection units and the heating lamp panel in the matching state, and the limit block is at the top of the groove portion at this time;

[0051] Figure 5 This is a schematic diagram of the positions of the first and second reflection units and the heating lamp panel in the separated state;

[0052] Figure 6 This is a schematic diagram of the disassembly of the first and second reflection units and the heating lamp panel components;

[0053] Description of reference numerals:

[0054] 1 Annealing chamber; 1.1 Feed port; 1.2 Wafer stage; 1.3 Heating lamp tray; 1.3.1 Heating lamp; 1.4 Pyrometer; 1.5 Insulation board;

[0055] 2 installation cabin; 2.1 first electric telescopic rod; 2.2 second electric telescopic rod;

[0056] 3 surrounding unit; 3.1 first limiting slide groove; 3.2 second limiting slide groove;

[0057] 4 first reflection unit; 4.1 first limit slider; 4.2 groove portion;

[0058] 5 second reflection unit; 5.1 L-shaped rod; 5.2 second limit slider; 5.3 limit block;

[0059] 6 first lifting ring; 6.1 first vertical rod; 6.2 through hole; 6.3 lifting annular plate; 6.3.1 first lifting rod; 7 second lifting ring; 7.1 second vertical rod; 7.2 lifting circular plate; 7.2.1 second lifting rod. DETAILED DESCRIPTION

[0060] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0061] The present invention provides Figure 1-6 A semiconductor wafer annealing furnace based on a novel chamber structure is shown, comprising an annealing chamber 1, a cabin door installed at the annealing chamber 1, and an installation chamber 2 installed on the top of the annealing chamber 1, the annealing chamber 1 having a feed port 1.1, the cabin door being capable of closing the feed port 1.1, the annealing chamber 1 having an annealing cavity, the installation chamber 2 having an installation cavity, the annealing chamber 1 being connected to a gas supply unit, the gas supply unit being used to supply working gas to the annealing chamber 1, a wafer carrier 1.2 and a heating lamp panel 1.3 being fixedly installed in the annealing cavity, a movable unit being further installed in the annealing cavity, the movable unit comprising a heat radiation reflecting unit, and a driving unit capable of driving the movable unit to rise and fall being installed in the installation cavity.

[0062] A plurality of pyrometers 1.4 are installed under the wafer carrier 1.2; the heating lamp panel 1.3 is circular, and a plurality of heating lamps 1.3.1 are installed on the heating lamp panel 1.3. The plurality of heating lamps 1.3.1, except for the heating lamp located at the center of the circle, are divided into a plurality of circles, and the plurality of heating lamps in the same circle are distributed in a circular shape with equal spacing.

[0063] A circular cylindrical enclosing unit 3 enclosing the heating lamp panel 1.3 is fixedly installed at the heating lamp panel 1.3, and a plurality of vertical first limiting slide grooves 3.1 and a plurality of vertical second limiting slide grooves 3.2 are provided on the outer circumferential surface of the enclosing unit 3; the heat radiation reflecting unit is divided into a circular first reflecting unit 4 and a circular second reflecting unit 5, and the lower surfaces of the first reflecting unit 4 and the second reflecting unit 5 are both reflecting surfaces, the first reflecting unit 4 is connected with a plurality of first limiting sliding blocks 4.1 cooperating with the first limiting slide groove 3.1, and the second reflecting unit 5 is connected with a plurality of L-shaped rods 5.1, and the end of each L-shaped rod 5.1 is connected with a second limiting sliding block 5.2 cooperating with the second limiting slide groove 3.2; a first lifting ring 6 and a second lifting ring 7 located above the first lifting ring 6 are provided above the enclosing unit 3, and each first limiting sliding block 4.1 is connected to the second limiting slide groove 3.2. The block 4.1 and the first lifting ring 6 are connected by a first vertical rod 6.1, each second limit slider 5.2 and the second lifting ring 7 are connected by a second vertical rod 7.1, and the first lifting ring 6 has a plurality of through holes 6.2 passed by the second vertical rod 7.1; the first lifting ring 6 is connected to a lifting annular plate 6.3 through a plurality of first radial rods, and the lifting annular plate 6.3 is connected to a first lifting rod 6.3.1, and the second lifting ring 7 is connected to a lifting circular plate 7.2 through a plurality of second radial rods, and the lifting circular plate 7.2 is connected to a second lifting rod 7.2.1, and the driving unit includes a first electric telescopic rod 2.1 connected to the first lifting rod 6.3.1 for driving the first lifting rod 6.3.1 to rise and fall, and a second electric telescopic rod 2.2 connected to the second lifting rod 7.2.1 for driving the second lifting rod 7.2.1 to rise and fall.

[0064] The first electric telescopic rod 2.1 and the first lifting rod 6.3.1 each have two and the two correspond to each other; the second electric telescopic rod 2.2 and the second lifting rod 7.2.1 each have two and the two correspond to each other; an insulation board 1.5 is installed in the annealing chamber, and the insulation board 1.5 has a first through hole passed by the first lifting rod 6.3.1 and a second through hole passed by the second lifting rod 7.2.1; the top of the annealing chamber 1 has a third through hole passed by the movable rod of the first electric telescopic rod and a fourth through hole passed by the movable rod of the second electric telescopic rod; the first reflecting unit 4 and the second reflecting unit 5 are both trumpet-shaped; each heating lamp 1.3.1 can independently control the power.

[0065] The first reflecting unit 4 has a plurality of groove portions 4.2 at its outer edge, the groove portions 4.2 are open at the top and closed at the bottom, the second reflecting unit 5 has a plurality of limit blocks 5.3 at its inner edge, the number of the limit blocks 5.3 is equal to the number of the groove portions 4.2 and the two correspond one to one, the first reflecting unit 4 and the second reflecting unit 5 can be in a mating state and a separation state, in the mating state, each limit block 5.3 is embedded in the corresponding groove portion 4.2; in the separation state, each limit block 5.3 is not embedded in the corresponding groove portion 4.2, and each limit block 5.3 is located above the corresponding groove portion 4.2; the outer edge of the first reflecting unit 4 is a vertical circumferential surface, the inner edge of the second reflecting unit 5 is a vertical circumferential surface, and the outer diameter of the first reflecting unit 4 is equal to the inner diameter of the second reflecting unit 5.

[0066] The number of the first limit slide grooves 3.1 is 6 and they are distributed in a circular shape with equal spacing; the number of the first limit sliders 4.1 is 6 and they are distributed in a circular shape with equal spacing; the number of the second limit slide grooves 3.2 is 6 and they are distributed in a circular shape with equal spacing; the number of the second limit sliders 5.2 is 6 and they are distributed in a circular shape with equal spacing; the top end of the first limit slide groove 3.1 is open and the bottom end is closed; the top end of the second limit slide groove 3.2 is open and the bottom end is closed; the number of the first vertical rod 6.1, the second vertical rod 7.1 and the through hole 6.2 are all 6.

[0067] Working principle: The semiconductor wafer annealing furnace of the present application can reflect the heat radiated outward from the circumference of the heating lamp disk by setting a heat radiation reflection unit, so that the temperature in the circumferential direction of the heating lamp disk is not easy to radiate outward, and better heating compensation for the edge of the wafer is achieved, thereby avoiding uneven temperature rise caused by faster heat dissipation of the edge of the wafer relative to the center of the wafer. The height of the heat radiation reflection unit can be adjusted. When the height of the reflection unit is high, the compensation effect is small. When the position of the reflection unit is low, the compensation effect is large, so that the actual temperature compensation effect can be adjusted. And there are two reflection units, and the lower surfaces of the first and second reflection units are both reflection surfaces. Therefore, the reflection effect of the edge heat radiation of the heating lamp disk can be adjusted, and the adjustment range is large. The first and second reflection units themselves have a limit matching structure. Through the cooperation of the limit block and the groove part, it can avoid the situation where the second reflection unit is located below the first reflection unit, thereby avoiding incorrect temperature compensation caused by the formation of a gap between the second reflection unit and the surrounding unit.

[0068] When adjusting the heat radiation reflection unit, the first lifting rod is driven to rise and fall by the first electric telescopic rod, thereby driving the first lifting ring to rise and fall, and the first vertical rod drives the first limit slider to move up and down in the first limit slide slot, so that the first reflection unit is in a suitable position, and the second lifting rod is driven to rise and fall by the second electric telescopic rod, thereby driving the second lifting ring to rise and fall, and the second vertical rod drives the second limit slider to move up and down in the second limit slide slot, so that all the limit blocks at the second reflection unit are inserted into the bottom of the corresponding groove portion, and after the adjustment is completed, the annealing furnace is operated to perform the annealing process. After the adjustment is completed, the positions of the first and second reflection units do not need to be adjusted for a long period of time, unless the specifications and batches of the annealed wafers are different, or when the annealing furnace is regularly maintained, it is detected that the temperature rise situation has changed when the annealing furnace is heated, and the positions of the first and second reflection units need to be readjusted. In addition, although the first and second electric telescopic rods can be controlled by the program to avoid the situation where the second reflection unit is located below the first reflection unit, the limit structure between the first and second reflection units further avoids the above situation from a physical structure, and the limit effect is better.

[0069] Although the present invention has been illustrated and described with respect to the preferred embodiments, it will be appreciated by those skilled in the art that various changes and modifications may be made to the present invention without departing from the scope of the present invention as defined by the claims.

Claims

1. A semiconductor wafer annealing furnace based on a novel chamber structure, characterized in that: The invention comprises an annealing chamber, a door installed at the annealing chamber, and an installation chamber installed at the top of the annealing chamber, the annealing chamber has a feed port, the door can close the feed port, the annealing chamber has an annealing chamber, the installation chamber has an installation chamber, the annealing chamber is connected to a gas supply unit, the gas supply unit is used to supply working gas to the annealing chamber, a wafer carrier and a heating lamp panel are fixedly installed in the annealing chamber, a movable unit is also installed in the annealing chamber, the movable unit comprises a heat radiation reflecting unit, and a driving unit capable of driving the movable unit to rise and fall is installed in the installation chamber; an annular cylindrical surrounding unit surrounding the heating lamp panel is fixedly installed at the heating lamp panel, and a plurality of vertical first limiting sliding grooves and a plurality of vertical second limiting sliding grooves are provided on the outer circumferential surface of the surrounding unit; the heat radiation reflecting unit is divided into a first annular reflecting unit and a second annular reflecting unit, the lower surfaces of the first reflecting unit and the second reflecting unit are both reflecting surfaces, and the first reflecting unit is a reflecting surface. The reflecting unit is connected to a plurality of first limiting sliding blocks that cooperate with the first limiting sliding groove, and the second reflecting unit is connected to a plurality of L-shaped rods, and the end of each L-shaped rod is connected to a second limiting sliding block that cooperates with the second limiting sliding groove; the upper part of the surrounding unit is provided with a first lifting ring and a second lifting ring located above the first lifting ring, each first limiting sliding block and the first lifting ring are connected by a first vertical rod, and each second limiting sliding block and the second lifting ring are connected by a second vertical rod, and the first lifting ring has a plurality of through holes passed by the second vertical rod; the first lifting ring is connected to a lifting annular plate through a plurality of first radial rods, the lifting annular plate is connected to the first lifting rod, the second lifting ring is connected to a lifting circular plate through a plurality of second radial rods, and the lifting circular plate is connected to the second lifting rod, and the driving unit includes a first electric telescopic rod connected to the first lifting rod for driving the first lifting rod to lift and a second electric telescopic rod connected to the second lifting rod for driving the second lifting rod to lift and lift.

2. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: A plurality of pyrometers are installed below the wafer stage.

3. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: The heating lamp plate is circular, and a plurality of heating lamps are installed on the heating lamp plate. The heating lamps except the heating lamp located at the center of the circle are divided into a plurality of circles, and the plurality of heating lamps in the same circle are distributed in a circular shape with equal spacing.

4. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: There are two first electric telescopic rods and two first lifting rods, and the two correspond to each other; there are two second electric telescopic rods and two second lifting rods, and the two correspond to each other.

5. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: An insulation plate is installed in the annealing chamber, and the insulation plate has a first through hole passed by the first lifting rod and a second through hole passed by the second lifting rod; the top of the annealing chamber has a third through hole passed by the movable rod of the first electric telescopic rod and a fourth through hole passed by the movable rod of the second electric telescopic rod.

6. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: The first reflecting unit and the second reflecting unit are both horn-shaped; and the power of each heating lamp can be independently controlled.

7. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: The first reflecting unit has a plurality of groove portions at its outer edge, the top of the groove portion is open and the bottom is closed, the second reflecting unit has a plurality of limit blocks at its inner edge, the number of the limit blocks is equal to the number of the groove portions and the two correspond one to one, the first reflecting unit and the second reflecting unit can be in a mating state and a separation state, in the mating state, each limit block is embedded in the corresponding groove portion; in the separation state, each limit block is not embedded in the corresponding groove portion, and each limit block is located above the corresponding groove portion.

8. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 7, characterized in that: The outer edge of the first reflecting unit is a vertical circumferential surface, the inner edge of the second reflecting unit is a vertical circumferential surface, and the outer diameter of the first reflecting unit is equal to the inner diameter of the second reflecting unit.

9. The semiconductor wafer annealing furnace based on the novel chamber structure according to claim 1, characterized in that: The number of the first limiting slide grooves is 6 and they are distributed in a circular shape with equal spacing; the number of the first limiting sliders is 6 and they are distributed in a circular shape with equal spacing; the number of the second limiting slide grooves is 6 and they are distributed in a circular shape with equal spacing; the number of the second limiting sliders is 6 and they are distributed in a circular shape with equal spacing; the top end of the first limiting slide groove is open and the bottom end is closed; the top end of the second limiting slide groove is open and the bottom end is closed; the number of the first vertical rod, the second vertical rod and the through hole are all 6.

Images