Chemical coating apparatus and method for microwave devices

Abstract

The application relates to the technical field of microwave devices, in particular to a chemical coating device and method for a microwave device. The method comprises the following steps: generating plating solution parameters to be coated according to microwave device parameters to be coated, setting working parameters of the chemical coating device according to the plating solution parameters to be coated; obtaining plating solution recovery parameters according to a preset correction time node, and judging whether the working parameters of the chemical coating device are corrected according to the plating solution recovery parameters; when the chemical coating is completed, obtaining total plating solution consumption, and setting drying parameters according to the total plating solution consumption. The plating solution flow rate and the coating sequence of various plating solutions are set according to the microwave device parameters to be coated, and the working parameters of the chemical coating device are dynamically adjusted according to the preset correction time node, so that the plating quality of a multi-layer inner cavity structure product is ensured, and the chemical plating efficiency is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of microwave devices, in particular to a chemical coating device and method for microwave devices. BACKGROUND

[0002] With the increasing complexity of microwave devices, the difficulty of surface treatment also increases. For example, the multi-layer internal cavity high-integration slot array antenna has a very narrow and complex internal structure, which shields the internal electromagnetic field, causing the electroplating process to fail, and the internal cavity of the multi-layer internal cavity high-integration slot array antenna cannot be electroplated. Therefore, chemical plating is the only choice.

[0003] Currently, the most widely used chemical plating in the communication field is conductive oxidation and chemical gold plating, both of which can achieve the purpose of plating the surface of the metal without applying electricity. However, for the multi-layer internal cavity high-integration slot array antenna, due to its narrow internal structure and the influence of the surface tension of the plating solution, the plating solution cannot flow smoothly and exchange in the internal cavity of the multi-layer internal cavity high-integration slot array antenna, resulting in a large flow resistance and affecting the quality of chemical plating.

[0004] To solve this problem, additional external force is needed to force the plating solution to flow normally after entering the internal cavity of the high-integration slot array antenna. By improving the flow of the plating solution in the cavity and solving the problem of plating solution concentration exchange, the quality of chemical plating of products with multi-layer internal cavity structure such as high-integration slot array antenna can be greatly improved. SUMMARY

[0005] The purpose of the present application is to solve the above technical problems, and the present application provides a chemical coating device and method for microwave devices, which aims to improve the quality of chemical plating of products with multi-layer internal cavity structure.

[0006] In some embodiments of the present application, the flow rate of the plating solution and the coating sequence of various types of plating solution are set according to the parameters of the microwave device to be coated, and the working parameters of the chemical coating device are dynamically adjusted according to the preset correction time node to ensure the plating quality of the multi-layer internal cavity structure product and improve the efficiency of chemical plating.

[0007] In some embodiments of the present application, the internal structure of the plating solution inlet control valve body is a parallel structure, and a plurality of water nozzle joints are provided at the plating solution inlet control valve body. According to the requirements of the chemical plating process, the water nozzle joints can be selected and arranged for single inlet or multiple inlets, which facilitates the control of chemical plating time and the recovery of plating solution during the plating process.

[0008] In some embodiments of the present application, a chemical coating method for microwave devices is provided, which includes:

[0009] The plating solution parameters to be coated are generated according to the device parameters of the microwave device to be coated, and the working parameters of the chemical coating device are set according to the plating solution parameters to be coated;

[0010] The plating solution recovery parameters are obtained according to the preset correction time node, and it is judged whether to correct the working parameters of the chemical coating device according to the plating solution recovery parameters;

[0011] When the chemical coating is completed, the total amount of the plating solution is obtained, and the drying parameters are set according to the total amount of the plating solution.

[0012] In some embodiments of the present application, when the working parameters of the chemical coating device are set according to the plating solution parameters to be coated, the following steps are included:

[0013] A demand amount sequence A of the plating solution to be coated is established, A=(a1, a2…an), wherein ai is the demand amount of the i-th plating solution to be coated, and n is the number of types of the plating solution to be coated;

[0014] The total demand f is generated, f= ;

[0015] The plating solution flow rate v is set according to the total demand f;

[0016] A plurality of first coating plans are generated according to the demand amount sequence A of the plating solution to be coated,

[0017] A first coating plan sequence B is established, B=(b1, b2…bm), wherein bi is the i-th first coating plan, and m is the number of first coating plans;

[0018] The running evaluation value of each first coating plan is generated;

[0019] A running evaluation value sequence C is established, C=(c1, c2…cm), wherein ci is the running evaluation value of the i-th first coating plan;

[0020] The first coating plan corresponding to the maximum running evaluation value in the running evaluation value sequence C is set as the second coating plan;

[0021] The working parameters of the chemical coating device are set according to the second coating plan and the plating solution flow rate.

[0022] In some embodiments of the present application, when the plating solution flow rate v is set, the following steps are included:

[0023] A first total demand interval (F1, F2), a second total demand interval (F2, F3), and a third total demand interval (F3, F4) are preset;

[0024] If the total demand f is in the preset first total demand interval, the plating solution flow rate v is set as a preset first plating solution flow rate V1, i.e. v=V1;

[0025] If the total demand f is in the preset second total demand interval, the plating solution flow rate v is set as a preset second plating solution flow rate V2, i.e., v=V2.

[0026] If the total demand f is in the preset third total demand interval, the plating solution flow rate v is set as a preset third plating solution flow rate V3, i.e., v=V3; and V1<V2<V3.

[0027] In some embodiments of the present application, when generating the running evaluation value of each primary coating plan, the following steps are included:

[0028] According to the sequence of the primary coating plans B, a target primary coating plan is selected;

[0029] The expected coating time and the plating solution coating sequence of the target primary coating plan are obtained;

[0030] A first reference evaluation value H1 is generated according to the expected coating time;

[0031] A second reference evaluation value H2 is generated according to the plating solution coating sequence;

[0032] A running evaluation value c of the target primary coating plan is generated according to the first reference evaluation value H1 and the second reference evaluation value H2;

[0033] c=e1*H1+e2*H2, wherein e1 is a preset first weight coefficient, and e2 is a preset second weight coefficient.

[0034] In some embodiments of the present application, when determining whether to correct the working parameters of the chemical coating equipment according to the plating solution recovery parameters, the following steps are included:

[0035] A plating solution model is established according to the total demand f and the plating solution flow rate v;

[0036] A plating solution expected recovery amount curve is generated according to the plating solution model;

[0037] The actual recovery amount d1 of the plating solution at the current correction time node is obtained;

[0038] The expected recovery amount d2 of the plating solution at the current correction time node is obtained according to the expected recovery amount curve;

[0039] A recovery amount difference Δd is generated, a correction coefficient g is set according to the recovery amount difference Δd, and the plating solution flow rate v between the current correction time node and the next correction time node is corrected according to the correction coefficient d;

[0040] The corrected plating solution flow rate v is g*Vi(i=1, 2, 3).

[0041] In some embodiments of the present application, when setting the correction coefficient g according to the recovery amount difference Δd, the following steps are included:

[0042] A first preset recovery amount difference interval (D1, D2) and a second preset recovery amount difference interval (D2, D3) are set.

[0043] When d1 < d2;

[0044] If the recovery amount difference Δd is in the first preset recovery amount difference interval, the correction coefficient g is set as a first preset correction coefficient g1, that is, g = g1.

[0045] If the recovery amount difference Δd is in the second preset recovery amount difference interval, the correction coefficient g is set as a second preset correction coefficient g2, that is, g = g2.

[0046] When d1 > d2;

[0047] If the recovery amount difference Δd is in the first preset recovery amount difference interval, the correction coefficient g is set as a third preset correction coefficient g3, that is, g = g3.

[0048] If the recovery amount difference Δd is in the second preset recovery amount difference interval, the correction coefficient g is set as a fourth preset correction coefficient g4, that is, g = g4.

[0049] Wherein, g4 < g3 < 1 < g1 < g2.

[0050] In some embodiments of the present application, when the drying parameters are set according to the total amount of plating solution, it includes:

[0051] The total amount of plating solution h is obtained, and the drying gas flow rate v is set according to the total amount of plating solution h;

[0052] A first preset total amount of plating solution interval (H1, H2), a second preset total amount of plating solution interval (H2, H3), and a third preset total amount of plating solution interval (H3, H4) are set.

[0053] If the total amount of plating solution h is in the first preset total amount of plating solution interval, the drying gas flow rate v is set as a first preset drying gas flow rate V1, that is, v = V1.

[0054] If the total amount of plating solution h is in the second preset total amount of plating solution interval, the drying gas flow rate v is set as a second preset drying gas flow rate V2, that is, v = V2.

[0055] If the total amount of plating solution h is in the third preset total amount of plating solution interval, the drying gas flow rate v is set as a third preset drying gas flow rate V3, that is, v = V3; and V1 < V2 < V3.

[0056] In some embodiments of the present application, a chemical coating device for a microwave device is provided, comprising:

[0057] A first frame layer is used to support the device and guide the flow of plating solution.

[0058] a second frame layer arranged on top of the first frame layer;

[0059] a third frame layer arranged on top of the second frame layer;

[0060] a fourth frame layer arranged on top of the third frame layer;

[0061] a recovery part arranged at the bottom of the inside of the first frame layer, the recovery part being used for storing the backflow plating solution;

[0062] a plating solution recovery control valve and a first control module arranged at one end of the top of the first frame layer, the first control module being used for setting the state of the plating solution recovery control valve;

[0063] a plurality of recovery openings are fixedly connected to one end of the plating solution recovery control valve;

[0064] a microwave device is clamped to the bottom end of the inside of the second frame layer, and a second liquid guide pipe is connected to the middle of the top of the microwave device;

[0065] a second water nozzle connector is connected to one end of the second liquid guide pipe and the other end of the first liquid guide pipe;

[0066] a plating solution inlet control valve is connected to the first liquid guide pipe, and a first water nozzle connector part is fixedly connected to the top of the plating solution inlet control valve;

[0067] a second control module is connected to the plating solution inlet control valve, and the second control module is used for controlling the state of the plating solution inlet control valve;

[0068] the first water nozzle connector part includes a plurality of water nozzle connectors;

[0069] a central control part is arranged on the top of the fourth frame layer, and the central control part is used for setting the working parameters of the chemical coating equipment.

[0070] In some embodiments of the present application, the central control part includes:

[0071] a housing, one end of the housing being provided with a display unit;

[0072] a first water pump arranged inside the housing, the first water pump being used for controlling the flow rate of the plating solution;

[0073] a first processing module arranged inside the housing, the first processing module being used for generating the plating solution parameters to be coated according to the parameters of the microwave device to be coated, and setting the working parameters of the chemical coating equipment according to the plating solution parameters to be coated;

[0074] The first correction module is arranged in the shell and is configured to obtain plating solution recovery parameters according to a preset correction time node, and determine whether to correct the working parameters of the chemical coating device according to the plating solution recovery parameters.

[0075] The second processing module is arranged in the shell and is configured to obtain total plating solution consumption when the chemical coating is completed, and set drying parameters according to the total plating solution consumption.

[0076] In some embodiments of the present application, the first processing module is further configured to:

[0077] establish a series of required plating solution consumption A, A=(a1, a2…an), wherein ai is the required consumption of the i-th required plating solution, and n is the number of required plating solutions;

[0078] generate a total required amount f, f= ;

[0079] set a plating solution flow rate v according to the total required amount f;

[0080] generate a plurality of first coating plans according to the series of required plating solution consumption A,

[0081] establish a series of first coating plans B, B=(b1, b2…bm), wherein bi is the i-th first coating plan, and m is the number of first coating plans;

[0082] generate a running evaluation value of each first coating plan;

[0083] establish a series of running evaluation values C, C=(c1, c2…cm), wherein ci is the running evaluation value of the i-th first coating plan;

[0084] set the first coating plan corresponding to the maximum running evaluation value in the series of running evaluation values C as a second coating plan;

[0085] set the working parameters of the chemical coating device according to the second coating plan and the plating solution flow rate.

[0086] Compared with the prior art, the chemical coating device and method for microwave devices according to the embodiments of the present application have the following beneficial effects:

[0087] The plating solution flow rate and the coating sequence of various plating solutions are set according to the parameters of the microwave device to be coated, and the working parameters of the chemical coating device are dynamically adjusted according to the preset correction time node, so as to ensure the plating quality of the multi-layer inner cavity structure product and improve the efficiency of chemical plating.

[0088] The internal structure of the plating solution inlet control valve body is a parallel structure, and by setting multiple water nozzle joints at the plating solution inlet control valve body, according to the requirements of the chemical plating process, selection and arrangement can be performed, single inlet or multiple inlets can be selected, and the chemical plating time can be controlled and the plating solution can be recycled during plating. BRIEF DESCRIPTION OF DRAWINGS

[0089] Figure 1 is a flowchart of a chemical coating method for a microwave device in a preferred embodiment of the present application;

[0090] Figure 2 is a structural diagram of a chemical coating device for a microwave device in a preferred embodiment of the present application.

[0091] The first frame layer is 100; the second frame layer is 200; the second water nozzle joint is 210; the second liquid guide pipe is 220; the first water nozzle joint is 230; the first liquid guide pipe is 240; the third frame layer is 300; the fourth frame layer is 400; the recovery part is 500; the microwave device is 600; the central control part is 700; the plating solution recovery control valve body is 810; the first control module is 820; the plating solution inlet control valve body is 910; and the second control module is 920. DETAILED DESCRIPTION

[0092] The specific embodiments of the present application will be further described in detail below with reference to the accompanying drawings and embodiments. The following embodiments are used to illustrate the present application, but are not used to limit the scope of the present application.

[0093] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0094] The terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "multiple" is two or more.

[0095] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "linking" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0096] As shown in the preferred embodiment of the present application, a chemical coating method for microwave devices comprises: Figure 1

[0097] S101: generating plating solution parameters to be coated according to device parameters of microwave devices to be coated, and setting working parameters of the chemical coating device according to the plating solution parameters to be coated;

[0098] S102: obtaining plating solution recovery parameters according to a preset correction time node, and judging whether to correct the working parameters of the chemical coating device according to the plating solution recovery parameters;

[0099] S103: when the chemical coating is completed, obtaining total amount of plating solution, and setting drying parameters according to the total amount of plating solution.

[0100] Specifically, when setting the working parameters of the chemical coating device according to the plating solution parameters to be coated, it comprises:

[0101] establishing a plating solution demand amount sequence A, A=(a1, a2…an), wherein ai is the demand amount of the i-th plating solution to be coated, and n is the type amount of the plating solution to be coated;

[0102] generating a total demand f, f= ;

[0103] setting a plating solution flow rate v according to the total demand f;

[0104] generating a plurality of first coating plans according to the plating solution demand amount sequence A,

[0105] establishing a first coating plan sequence B, B=(b1, b2…bm), wherein bi is the i-th first coating plan, and m is the number of first coating plans;

[0106] generating running evaluation values of each first coating plan;

[0107] establishing a running evaluation value sequence C, C=(c1, c2…cm), wherein ci is the running evaluation value of the i-th first coating plan;

[0108] setting the first coating plan corresponding to the maximum running evaluation value in the running evaluation value sequence C as a second coating plan;​

[0109] According to the secondary coating plan and the plating solution flow rate, the working parameters of the chemical coating equipment are set.

[0110] Specifically, according to different microwave device equipment parameters, the required coating plating solution type and amount are determined, and according to the type of the plating solution, a plurality of coating sequences are set, and a primary coating plan is generated according to a single coating sequence.

[0111] Specifically, when setting the sequence, different types of plating solution can be sequentially and individually fed, or simultaneously fed, and all coating sequences are generated by using the exhaustion method.

[0112] Specifically, when setting the plating solution flow rate v, it includes:

[0113] The first required total amount interval (F1, F2), the second required total amount interval (F2, F3) and the third required total amount interval (F3, F4) are preset;

[0114] If the required total amount f is in the preset first required total amount interval, the plating solution flow rate v is set to the preset first plating solution flow rate V1, that is, v=V1;

[0115] If the required total amount f is in the preset second required total amount interval, the plating solution flow rate v is set to the preset second plating solution flow rate V2, that is, v=V2;

[0116] If the required total amount f is in the preset third required total amount interval, the plating solution flow rate v is set to the preset third plating solution flow rate V3, that is, v=V3; and V1<V2<V3.

[0117] Specifically, the flow rate of the plating solution is dynamically adjusted according to the total required amount of the plating solution, so as to control the overall coating time, and improve the chemical coating efficiency of the multi-layer inner cavity structure product under the premise of ensuring the coating quality.

[0118] Specifically, when generating the running evaluation value of each primary coating plan, it includes:

[0119] According to the primary coating plan sequence B, a target primary coating plan is selected;

[0120] The expected coating time and plating solution coating sequence of the target primary coating plan are obtained;

[0121] A first reference evaluation value H1 is generated according to the expected coating time;

[0122] A second reference evaluation value H2 is generated according to the plating solution coating sequence;

[0123] The running evaluation value c of the target primary coating plan is generated according to the first reference evaluation value H1 and the second reference evaluation value H2;

[0124] c = e1*H1 + e2*H2, wherein e1 is a preset first weight coefficient, and e2 is a preset second weight coefficient.

[0125] Specifically, the first reference evaluation value and the second reference evaluation value have the same value range, the longer the expected coating duration, the lower the corresponding first reference evaluation value, the greater the possibility of mutual influence between adjacent plating solutions in the plating solution coating sequence, and the lower the corresponding second reference evaluation value.

[0126] Specifically, the greater the running evaluation value of the first coating plan, the higher the feasibility of the current first coating plan, and the better the coating effect of the corresponding microwave device.

[0127] In the preferred embodiment of the present application, when determining whether to correct the working parameters of the chemical coating equipment according to the plating solution recovery parameters, the following steps are included:

[0128] A plating solution model is established according to the total demand f and the plating solution flow rate v;

[0129] A plating solution expected recovery amount curve is generated according to the plating solution model;

[0130] The actual recovery amount d1 of the plating solution at the current correction time node is obtained;

[0131] The expected recovery amount d2 of the plating solution at the current correction time node is obtained according to the expected recovery amount curve;

[0132] A recovery amount difference Δd is generated, a correction coefficient g is set according to the recovery amount difference Δd, and the plating solution flow rate v between the current correction time node and the next correction time node is corrected according to the correction coefficient d;

[0133] The corrected plating solution flow rate v = g*Vi, (i = 1, 2, 3).

[0134] Specifically, when setting the correction coefficient g according to the recovery amount difference Δd, the following steps are included:

[0135] A preset first recovery amount difference interval (D1, D2) and a preset second recovery amount difference interval (D2, D3) are set;

[0136] When d1 < d2;

[0137] If the recovery amount difference Δd is in the preset first recovery amount difference interval, the correction coefficient g is set to a preset first correction coefficient g1, i.e., g = g1;

[0138] If the recovery amount difference Δd is in the preset second recovery amount difference interval, the correction coefficient g is set to a preset second correction coefficient g2, i.e., g = g2;

[0139] When d1 > d2;

[0140] If the recovery amount difference Δd is in the preset first recovery amount difference interval, the correction coefficient g is set as a preset third correction coefficient g3, that is, g=g3;

[0141] If the recovery amount difference Δd is in the preset second recovery amount difference interval, the correction coefficient g is set as a preset fourth correction coefficient g4, that is, g=g4;

[0142] Wherein, g4 < g3 < 1 < g1 < g2.

[0143] Specifically, when the real-time recovery amount of the plating solution is greater than the expected recovery amount, it indicates that the plating solution stays in the inner cavity structure of the microwave device for too short a time, and the liquid inlet flow rate needs to be appropriately reduced to ensure the coating effect of the plating solution on the microwave device.

[0144] Specifically, when the real-time recovery amount of the plating solution is less than the expected recovery amount, it indicates that it is difficult for the plating solution to enter the inner cavity structure of the microwave device, and the liquid inlet flow rate needs to be increased to ensure that the plating solution can smoothly enter the inside of the microwave device for coating, thereby ensuring the coating effect of the plating solution on the microwave device.

[0145] In the above embodiment, the real-time recovery amount of the plating solution is obtained through the preset correction time node, and according to the difference between the real-time recovery amount and the expected recovery amount, the correction coefficient is set to periodically adjust the liquid inlet flow rate of the plating solution, thereby improving the overall coating quality.

[0146] In the preferred embodiment of the present application, when setting the drying parameter according to the total amount of plating solution, it includes:

[0147] The total amount of plating solution h is obtained, and the drying gas flow rate v is set according to the total amount of plating solution h;

[0148] A first total amount of plating solution interval (H1, H2), a second total amount of plating solution interval (H2, H3), and a third total amount of plating solution interval (H3, H4) are preset;

[0149] If the total amount of plating solution h is in the preset first total amount of plating solution interval, the drying gas flow rate v is set as a preset first drying gas flow rate V1, that is, v=V1;

[0150] If the total amount of plating solution h is in the preset second total amount of plating solution interval, the drying gas flow rate v is set as a preset second drying gas flow rate V2, that is, v=V2;

[0151] If the total amount of plating solution h is in the preset third total amount of plating solution interval, the drying gas flow rate v is set as a preset third drying gas flow rate V3, that is, v=V3; and V1 < V2 < V3.

[0152] Specifically, in the above embodiments, the flow rate of the dry gas is dynamically adjusted according to the total amount of the plating solution, the drying efficiency for the coated microwave device is improved, and the overall coating time is controlled.

[0153] As shown in Figure 2 Another preferred embodiment based on any of the above preferred embodiments for a chemical coating method for a microwave device is provided, which comprises a chemical coating device for a microwave device, comprising:

[0154] A first frame layer 100 is used to support the device and guide the flow of the plating solution;

[0155] A second frame layer 200 is arranged at the top end of the first frame layer 100;

[0156] A third frame layer 300 is arranged at the top end of the second frame layer 200;

[0157] A fourth frame layer 400 is arranged at the top end of the third frame layer 300;

[0158] A recovery part 500 is arranged at the bottom of the inside of the first frame layer 100, and the recovery part 500 is used to store the backflow of the plating solution;

[0159] A plating solution recovery control valve body 810 and a first control module 820 are arranged at one end of the top of the first frame layer 100, and the first control module 820 is used to set the state of the plating solution recovery control valve body 810;

[0160] The plating solution recovery control valve body 810 is fixedly connected with a plurality of recovery ports at one end;

[0161] A microwave device 600 is clamped at the bottom end of the inside of the second frame layer 200, and a second liquid guide pipe 220 is connected to the middle of the top end of the microwave device 600;

[0162] A second water nozzle joint 210 is connected to the second liquid guide pipe 220 at one end and connected to the first liquid guide pipe 240 at the other end;

[0163] A plating solution inlet control valve body 910 is connected to the first liquid guide pipe 240, and a first water nozzle joint part 230 is fixedly connected to the top end of the plating solution inlet control valve body 910;

[0164] A second control module 920 is connected to the plating solution inlet control valve body 910, and the second control module 920 is used to control the state of the plating solution inlet control valve body 910;

[0165] The first water nozzle joint part 230 comprises a plurality of water nozzle joints;

[0166] A central control part 700 is arranged at the top of the fourth frame layer 400, and the central control part 700 is used to set the working parameters of the chemical coating device.

[0167] Specifically, the first control module and the second control module are preferably electromagnetic valves.

[0168] Specifically, the plating solution enters the plating solution inlet control valve body 910 through the pipeline, enters the microwave device 600 through the first liquid guide pipe 240 and the second liquid guide pipe 220, flows smoothly in the microwave device 600 under the influence of the water pump pressure, and finally flows out, then flows into the funnel drainage groove of the first frame layer 100 through the filter screen of the second frame layer 200, enters the plating solution recovery control valve body 810, and the plating solution recovery control valve body 810 opens the corresponding valve core according to the program setting to allow the plating solution to flow into the corresponding recovery pipeline, and finally forms recovery. Each tank liquid reciprocates until the chemical plating is completed.

[0169] Specifically, the first water nozzle joint part 230 includes a chemical gold solution water nozzle joint, a heating drying gas water nozzle joint, a chemical copper solution water nozzle joint, a chemical nickel solution water nozzle joint, a hot pure water water nozzle joint, a sodium hydroxide solution water nozzle joint, a nitric acid solution water nozzle joint, and a conductive oxidation solution water nozzle joint. The chemical gold solution water nozzle joint is provided opposite the nitric acid solution water nozzle joint, the heating drying gas water nozzle joint is provided opposite the conductive oxidation solution water nozzle joint, the hot pure water water nozzle joint is provided opposite the chemical nickel solution water nozzle joint, and the chemical copper solution water nozzle joint is provided opposite the sodium hydroxide solution water nozzle joint.

[0170] Specifically, the recovery port fixedly connected to one end of the plating solution recovery control valve body includes, but is not limited to, a chemical copper solution recovery port, a conductive oxidation solution recovery port, a chemical nickel solution recovery port, a chemical gold solution recovery port, and a cleaning waste liquid recovery port.

[0171] Specifically, the central control part includes:

[0172] The shell is provided with a display unit at one end;

[0173] The first water pump is arranged in the shell and is used to control the flow rate of the plating solution;

[0174] The first processing module is arranged in the shell and is used to generate a required coating plating solution parameter according to a device parameter of a microwave device to be coated, and set a working parameter of the chemical coating device according to the required coating plating solution parameter;

[0175] The first correction module is arranged in the shell and is used to obtain a plating solution recovery parameter according to a preset correction time node, and judge whether to correct the working parameter of the chemical coating device according to the plating solution recovery parameter;

[0176] The second processing module is arranged in the shell and is used to obtain a total amount of the plating solution when the chemical coating is completed, and set a drying parameter according to the total amount of the plating solution.

[0177] Specifically, the first processing module is further configured to:

[0178] establish a series of required amounts of plating solution A, A=(a1, a2…an), wherein ai is the required amount of the ith type of plating solution, and n is the number of types of plating solution required;

[0179] generate a total required amount f, f= ;

[0180] set a plating solution flow rate v according to the total required amount f;

[0181] generate a plurality of first-level coating plans according to the series of required amounts of plating solution A,

[0182] establish a series of first-level coating plans B, B=(b1, b2…bm), wherein bi is the ith first-level coating plan, and m is the number of first-level coating plans;

[0183] generate a running evaluation value for each first-level coating plan;

[0184] establish a series of running evaluation values C, C=(c1, c2…cm), wherein ci is the running evaluation value of the ith first-level coating plan;

[0185] set the first-level coating plan corresponding to the maximum running evaluation value in the series of running evaluation values C as a second-level coating plan;

[0186] set the working parameters of the chemical coating equipment according to the second-level coating plan and the plating solution flow rate.

[0187] According to the first concept of the present application, the plating solution flow rate and the coating sequence of each type of plating solution are set according to the parameters of the microwave device to be coated, and the working parameters of the chemical coating equipment are dynamically adjusted according to the preset correction time node, thereby ensuring the plating quality of the multi-layer inner cavity structure product and improving the efficiency of chemical plating.

[0188] According to the second concept of the present application, the internal structure of the plating solution inlet control valve body is a parallel structure, and a plurality of water nozzle joints are arranged at the plating solution inlet control valve body. According to the requirements of the chemical plating process, the water nozzle joints can be selected and arranged for single inlet or multiple inlets, which facilitates the control of the chemical plating time and the recovery of the plating solution during the plating process.

[0189] The above only describes the preferred embodiments of the present application. It should be noted that those skilled in the art can make several improvements and replacements without departing from the technical principles of the present application, and these improvements and replacements should also be considered as the protection scope of the present application.

Claims

1. A chemical coating apparatus for use in a chemical coating method for a microwave device, characterized by, The method comprises: According to the parameters of the microwave device to be coated, the parameters of the plating solution to be coated are generated, and the working parameters of the chemical coating device are set according to the parameters of the plating solution to be coated; According to the preset correction time node, the plating solution recovery parameters are obtained, and whether the working parameters of the chemical coating device are corrected is judged according to the plating solution recovery parameters; When the chemical coating is completed, the total amount of plating solution is obtained, and the drying parameters are set according to the total amount of plating solution; When the working parameters of the chemical coating device are set according to the parameters of the plating solution to be coated, it comprises: A demand quantity series A of the plating solution to be coated is established, A=(a1, a2…an), wherein ai is the demand quantity of the i-th plating solution to be coated, and n is the number of types of plating solution to be coated; The total demand f, f = ∑fi is generated ; The flow rate v of the plating solution is set according to the total demand f; a plurality of first coating plans are generated according to the demand quantity series A of the plating solution to be coated, A first coating plan series B is established, B=(b1, b2…bm), wherein bi is the i-th first coating plan, and m is the number of first coating plans; The running evaluation value of each first coating plan is generated; A running evaluation value series C is established, C=(c1, c2…cm), wherein ci is the running evaluation value of the i-th first coating plan; The first coating plan corresponding to the maximum running evaluation value in the running evaluation value series C is set as the second coating plan; The working parameters of the chemical coating device are set according to the second coating plan and the flow rate of the plating solution; When the flow rate v of the plating solution is set, it comprises: The first demand total interval (F1, F2), the second demand total interval (F2, F3) and the third demand total interval (F3, F4) are preset; If the total demand f is in the preset first demand total interval, the flow rate v of the plating solution is set as the preset first flow rate V1, i.e. v=V1; If the total demand f is in the preset second demand total interval, the flow rate v of the plating solution is set as the preset second flow rate V2, i.e. v=V2; if the total demand f is in the preset third demand total interval, the flow rate v of the plating solution is set as the preset third flow rate V3, i.e. v=V3; and V1<V2<V3; When the running evaluation value of each first coating plan is generated, it comprises: The target first coating plan is selected according to the first coating plan series B; The expected coating time and the plating solution coating sequence of the target first coating plan are obtained; The first reference evaluation value H1 is generated according to the expected coating time; The second reference evaluation value H2 is generated according to the plating solution coating sequence; The running evaluation value c of the target first coating plan is generated according to the first reference evaluation value H1 and the second reference evaluation value H2; c=e1*H1+e2*H2, wherein e1 is a preset first weight coefficient, and e2 is a preset second weight coefficient; When whether the working parameters of the chemical coating device are corrected is judged according to the plating solution recovery parameters, it comprises: A plating solution model is established according to the total demand f and the flow rate v of the plating solution; The plating solution expected recovery amount curve is generated according to the plating solution model; The actual recovery amount d1 of the plating solution at the current correction time node is obtained; The expected recovery amount d2 at the current correction time node is obtained according to the expected recovery amount curve; A recovery amount difference Δd is generated, and a correction coefficient g is set according to the recovery amount difference Δd, and the plating solution flow rate v between the current correction time node and the next correction time node is corrected according to the correction coefficient d; The corrected plating solution flow rate v=g*Vi, (i=1, 2, 3); When setting the correction coefficient g according to the recovery amount difference Δd, it includes: A first recovery amount difference interval (D1, D2) and a second recovery amount difference interval (D2, D3) are preset; When d1 If the recovery amount difference Δd is in the preset first recovery amount difference interval, the correction coefficient g is set to the preset first correction coefficient g1, that is, g=g1; If the recovery amount difference Δd is in the preset second recovery amount difference interval, the correction coefficient g is set to the preset second correction coefficient g2, that is, g=g2; When d1>d2; If the recovery amount difference Δd is in the preset first recovery amount difference interval, the correction coefficient g is set to the preset third correction coefficient g3, that is, g=g3; If the recovery amount difference Δd is in the preset second recovery amount difference interval, the correction coefficient g is set to the preset fourth correction coefficient g4, that is, g=g4; wherein g4 When setting the drying parameter according to the total amount of plating solution, it includes: The total amount of plating solution h is obtained, and the drying gas flow rate v is set according to the total amount of plating solution h; A first total amount of plating solution interval (H1, H2), a second total amount of plating solution interval (H2, H3), and a third total amount of plating solution interval (H3, H4) are preset; If the total amount of plating solution h is in the preset first total amount of plating solution interval, the drying gas flow rate v is set to the preset first drying gas flow rate V1, that is, v=V1; If the total amount of plating solution h is in the preset second total amount of plating solution interval, the drying gas flow rate v is set to the preset second drying gas flow rate V2, that is, v=V2; If the total amount of plating solution h is in the preset third total amount of plating solution interval, the drying gas flow rate v is set to the preset third drying gas flow rate V3, that is, v=V3; and V1 The chemical coating equipment includes: A first frame layer for supporting the device and guiding the plating solution; A second frame layer arranged at the top end of the first frame layer; A third frame layer arranged at the top end of the second frame layer; A fourth frame layer arranged at the top end of the third frame layer; A recovery part arranged at the bottom of the inside of the first frame layer, the recovery part is used for storing the backflow plating solution; A plating solution recovery control valve body and a first control module are arranged at one end of the top of the first frame layer, the first control module is used for setting the state of the plating solution recovery control valve body; One end of the plating solution recovery control valve body is fixedly connected with a plurality of recovery ports; The bottom end of the inside of the second frame layer is clamped with a microwave device, and the top end of the microwave device is connected with a second liquid guide pipe; A second water nozzle joint is connected with the second liquid guide pipe at one end and connected with a first liquid guide pipe at the other end; A plating solution inlet control valve body is connected with the first liquid guide pipe, and the top end of the plating solution inlet control valve body is fixedly connected with a first water nozzle joint part; A second control module is connected with the plating solution inlet control valve body, and the second control module is used for controlling the state of the plating solution inlet control valve body; The first water nozzle joint part comprises a plurality of water nozzle joints; A central control part is arranged on the top of the fourth frame layer, and is used for setting the working parameters of the chemical coating equipment; The central control part comprises: A shell is provided with a display unit at one end; A first water pump is arranged in the shell, and is used for controlling the flow rate of the plating solution; A first processing module is arranged in the shell, and is used for generating plating solution parameters to be coated according to the parameters of the microwave device to be coated, and setting the working parameters of the chemical coating equipment according to the plating solution parameters to be coated; A first correction module is arranged in the shell, and is used for acquiring plating solution recovery parameters according to a preset correction time node, and judging whether to correct the working parameters of the chemical coating equipment according to the plating solution recovery parameters; A second processing module is arranged in the shell, and is used for acquiring the total amount of the plating solution when the chemical coating is completed, and setting the drying parameters according to the total amount of the plating solution; The first processing module is further used for: A plating solution demand quantity sequence A is established, A=(a1, a2…an), wherein ai is the demand quantity of the i-th plating solution to be coated, and n is the type quantity of the plating solution to be coated; generating a total demand f, f = f1 + f2 + f3 ; The plating solution flow rate v is set according to the total demand f; A plurality of first-level coating plans are generated according to the plating solution demand quantity sequence A, A first-level coating plan sequence B is established, B=(b1, b2…bm), wherein bi is the i-th first-level coating plan, and m is the number of the first-level coating plans; The running evaluation value of each first-level coating plan is generated; A running evaluation value sequence C is established, C=(c1, c2…cm), wherein ci is the running evaluation value of the i-th first-level coating plan; The first-level coating plan corresponding to the maximum running evaluation value in the running evaluation value sequence C is set as a second-level coating plan; The working parameters of the chemical coating equipment are set according to the second-level coating plan and the plating solution flow rate.

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