Radio frequency switch and control method of radio frequency switch

Abstract

The present application provides a radio frequency switch and a control method for the radio frequency switch, relating to the radio frequency field. The radio frequency switch has the characteristics of small insertion loss, port standing wave, and switch area. The first end of the switch link in the radio frequency switch is used to output the radio frequency signal, and the second end of the switch link is used to receive the radio frequency signal. The multiple switch links include a first link and multiple second links, and the voltage of the radio frequency signal received by the first link is greater than the voltage of the radio frequency signal received by the second link. The breakdown voltage of each second link when it is disconnected is greater than the voltage of the radio frequency signal received by the first link. The breakdown voltage of the first link when it is disconnected is greater than the voltage of the radio frequency signal received by each second link. Each second link includes a shared common link. The common link is connected to the first end of each second link. The breakdown voltage of the common link when it is disconnected is greater than zero, and the breakdown voltage of the non-common link in the second link when it is disconnected is greater than the voltage of the radio frequency signal received by the corresponding second link.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of radio frequency, and in particular to a radio frequency switch and a control method for the radio frequency switch. Background Art

[0002] RF switches are common components in RF modules. Generally speaking, an RF switch consists of multiple input ports and one or more output ports, each connected to the other by a switch link. When a switch link is connected, the corresponding input and output ports are connected; when a switch link is disconnected, the corresponding input and output ports are disconnected.

[0003] A switch link is generally composed of a stack of components such as transistors that can be turned on and off and have a certain breakdown voltage. When there are more switch links in an RF switch, the number of components such as transistors in the RF switch will also be larger, resulting in larger insertion loss, port standing wave, switch area, and insertion loss of the high-power branch in the RF switch. Summary of the Invention

[0004] The present application provides a radio frequency switch and a control method for the radio frequency switch. The radio frequency switch has the characteristics of small insertion loss, port standing wave, and switch area, and small insertion loss of a high-power branch.

[0005] In order to achieve the above objectives, the embodiments of the present application adopt the following technical solutions.

[0006] In a first aspect, a radio frequency switch is provided, comprising a plurality of switch links connected at a first end. The first end of the switch link is used to output a radio frequency signal, and the second end of the switch link is used to receive a radio frequency signal. The plurality of switch links include a first link and a plurality of second links, and the voltage of the radio frequency signal received by the first link is greater than the voltage of the radio frequency signal received by the second link. The breakdown voltage of each second link when disconnected is greater than the voltage of the radio frequency signal received by the first link. The breakdown voltage of the first link when disconnected is greater than the voltage of the radio frequency signal received by each second link. Each second link includes a shared common link. The common link is connected to the first end of each second link. The breakdown voltage of the common link when disconnected is greater than zero, and the breakdown voltage of a non-common link in the second link when disconnected is greater than the voltage of the radio frequency signal received by the corresponding second link.

[0007] Based on this solution, a shared common link is split out in a switch link with low RF power (i.e., the voltage of the received RF signal is low), which is beneficial to reducing the number of components (such as transistors) used in the switch link in the RF switch to provide breakdown voltage, thereby reducing the insertion loss of the RF switch, port standing wave, switch area, insertion loss of the high-power branch, etc.

[0008] In one possible implementation, at least one MOS transistor is connected in series between the first and second ends of the switch link. The breakdown voltage of the switch link when it is disconnected is the breakdown voltage of all MOS transistors connected in series between the first and second ends of the corresponding switch link.

[0009] In a possible implementation, the switch link further includes a third terminal connected to ground. When the second terminal and the third terminal of the switch link are disconnected, a breakdown voltage is greater than a voltage of a radio frequency signal received by the corresponding switch link.

[0010] In one possible implementation, at least one MOS transistor is connected in series between the second and third ends of the switch link. A breakdown voltage when the second and third ends of the switch link are disconnected is the breakdown voltage of all MOS transistors connected in series between the second and third ends of the corresponding switch link.

[0011] In one possible implementation, the RF switch further includes a ground link, one end of the ground link being connected to the first end of each switch link and the other end being grounded. When the ground link is disconnected, the breakdown voltage is greater than the voltage of the RF signal received by the first link. The breakdown voltage of the common link is greater than the voltage of the RF signal received by the corresponding second link.

[0012] In a possible implementation, the plurality of switch links are connected to a control circuit, which is configured to control the connection and disconnection of the switch links.

[0013] In a possible implementation, the control circuit is connected to the gate of the MOS transistor in each switch link.

[0014] In a second aspect, a method for controlling a radio frequency switch is provided, the method being applied to a control circuit connected to each switch link in the radio frequency switch according to any one of the first aspects. The method comprises: receiving a first instruction. The first instruction is used to instruct the control circuit to control the connection of a third link among multiple second links of the radio frequency switch and the disconnection of the first link. A first signal is sent to the first link and non-public links in each second link other than the third link, and a second signal is sent to the public link and non-public links of the third link. The first signal is used to indicate that the corresponding link is disconnected, and the second signal is used to indicate that the corresponding link is connected.

[0015] In one possible implementation, when the switch link includes a grounded third end, sending a first signal to the first link and non-common links among the second links, and sending a second signal to the common link and non-common links of the third link, includes: sending the first signal to the link between the first and second ends of the first link, the non-common links among the second links other than the third link, and the link between the second and third ends of the third link. Sending the second signal to the link between the second and third ends of the first link, the link between the second and third ends of the second links other than the third link, the common link, and non-common links of the third link.

[0016] In a possible implementation, when the RF switch includes a ground link, sending the first signal to the first link and the non-public links in each second link, sending the second signal to the public link and the non-public link of the third link, further includes: sending the first signal to the ground link.

[0017] In a third aspect, an electronic device is provided, comprising an antenna and one or more memories. The antenna is connected to one or more processors via a radio frequency link. The one or more memories are coupled to the one or more processors, and the one or more memories store computer instructions. When the one or more processors execute the computer instructions, the electronic device performs the radio frequency switch control method described in any one of the second aspects.

[0018] In a fourth aspect, an electronic device is provided, comprising a radio frequency chip for receiving and / or transmitting radio frequency signals, a radio frequency link for transmitting and / or processing radio frequency signals, an antenna for receiving and / or transmitting radio frequency signals, and the radio frequency switch according to any one of the first aspects. The radio frequency chip is connected to an input port of the radio frequency switch via the radio frequency link. The antenna is connected to an output port of the radio frequency switch.

[0019] It should be understood that the technical solutions provided in the second and third aspects above and their technical features can all correspond to the RF switch provided in the first aspect and its possible designs, so the beneficial effects that can be achieved are similar and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of a radio frequency module provided in an embodiment of the present application;

[0021] Figure 2 A schematic diagram of another radio frequency module provided in an embodiment of the present application;

[0022] Figure 3 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application;

[0023] Figure 4 Schematic diagram of the switch link provided for the example of this application;

[0024] Figure 5 Schematic diagram of the switch link in the RF switch provided for the implementation of this application;

[0025] Figure 6 A schematic diagram of parasitic parameters of a MOS tube provided in an embodiment of the present application;

[0026] Figure 7 A schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0027] Figure 8 A schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0028] Figure 9 A flow chart of a switch link design method provided in an embodiment of the present application;

[0029] Figure 10 A schematic diagram of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0030] Figure 11 A schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0031] Figure 12 A schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0032] Figure 13 A schematic diagram of a switch link of a radio frequency switch provided in an embodiment of the present application;

[0033] Figure 14 A schematic diagram of a switch link of another radio frequency switch provided in an embodiment of the present application;

[0034] Figure 15 A schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0035] Figure 16 A schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0036] Figure 17 A schematic diagram of a switch link of another radio frequency switch provided in an embodiment of the present application;

[0037] Figure 18 A schematic diagram of a switch link of another radio frequency switch provided in an embodiment of the present application;

[0038] Figure 19 A schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application;

[0039] Figure 20 A schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In the embodiments of the present application, the terms "first," "second," and "third" are used to distinguish different objects rather than to define a specific order. In addition, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a concrete way.

[0041] The following first introduces the application background of the embodiments of the present application.

[0042] With the increasing application of communication technologies such as 4G (4-generation, fourth-generation mobile communication technology) and 5G (5-generation, fifth-generation mobile communication technology), electronic devices also need to support radio frequency signals in more and more frequency bands.

[0043] RF modules are used in electronic devices to generate and process various RF signals. RF current is used to generate electromagnetic waves through antennas, and different RF signals can generate electromagnetic waves in different frequency bands. Therefore, the term "RF signal" in a certain frequency band refers to the RF signal corresponding to the electromagnetic waves in that frequency band, and will not be further discussed.

[0044] An RF module typically includes an RF chip, a power amplifier (PA), a low-noise amplifier (LNA), an RF switch, a filter, and a control circuit. The RF chip generates RF signals in different frequency bands, the PA amplifies the power of the RF signal, the LNA is a low-noise power amplifier, and the control circuit controls the connectivity between the input and output ports of the RF switch.

[0045] The radio frequency module may include multiple radio frequency links corresponding to different frequency bands, and the radio frequency links corresponding to different frequency bands are connected to antennas or other radio frequency links through radio frequency switches. Among them, the radio frequency link corresponding to the frequency band refers to the antenna connected to the radio frequency link for transmitting and receiving radio frequency signals of the frequency band. Exemplarily, the radio frequency module may include radio frequency links corresponding to 4G frequency bands or 5G frequency bands, radio frequency links corresponding to GSM frequency bands, radio frequency links corresponding to satellite frequency bands, radio frequency links corresponding to the transmitting frequency bands of a certain frequency band, radio frequency links corresponding to the receiving frequency bands of a certain frequency band, and so on. In an embodiment of the present application, the 4G frequency band may also be referred to as the LTE (Long Term Evolution, fourth generation mobile communication technology) frequency band, and the 5G frequency band may also be referred to as the NR (New Radio, new air interface) frequency band, which will not be repeated later.

[0046] The following introduces the RF module using an example in which the RF module includes two RF links.

[0047] Please refer to Figure 1 , is a schematic diagram of a radio frequency module provided in an embodiment of the present application. Figure 1 As shown, the RF module includes two RF links corresponding to the LTE band or NR band, namely RF link a and RF link b, and also includes a RF link c corresponding to the GSM band. The first end of RF link a is connected to RF chip s, and the second end of RF link a is connected to input port p1 of RF switch p. The first end of RF link b is connected to RF chip s, and the second end is connected to input port p2 of RF switch p. The first end of RF link c is connected to RF chip s, and the second end is connected to input port p3 of RF switch p. The output port p4 of RF switch p is connected to antenna ant1. RF switch p is also connected to control circuit k. RF switch p is a single-pole double-throw switch.

[0048] It should be noted that, in order to illustrate the overall structure of the RF module, Figure 1 Specific components included in RF chain a, RF chain b, and RF chain c, such as PA and filters, are not shown.

[0049] Depend on Figure 1It can be seen from the RF module shown that when the control circuit k controls the connection between the input port p1 and the output port p4 of the RF switch p, the RF signal of the LTE or NR frequency band can be transmitted to the antenna ant1 through the RF link a to complete the transmission of the RF signal. Similarly, when the control circuit k controls the connection between the input port p2 and the output port p4 of the RF switch p, the RF signal of the LTE or NR frequency band can be transmitted to the antenna ant1 through the RF link b to complete the transmission of the RF signal. When the control circuit k controls the connection between the input port p3 and the output port p4 of the RF switch p, the RF signal of the GSM frequency band can be transmitted to the antenna ant1 through the RF link c to complete the transmission of the RF signal. In other words, the RF switch can choose to connect different RF links to the antenna to transmit the RF signal of the corresponding frequency band to the antenna to complete the transmission of the RF signal.

[0050] In some possible implementations, the RF switch in the RF module may also include multiple output ports. For example, if there are two output ports, please refer to Figure 2 , is a schematic diagram of another radio frequency module provided in an embodiment of the present application. Figure 2 As shown, the RF module includes two RF links corresponding to the LTE or NR bands, namely RF link a and RF link b, as well as a RF link c corresponding to the GSM band. RF link a has one end connected to RF chip s and the other end connected to input port q1 of RF switch q. RF link b has one end connected to RF chip s and the other end connected to input port q2 of RF switch q. RF link c has one end connected to RF chip s and the other end connected to input port q3 of RF switch q. Output port q4 of RF switch q is connected to antenna ant1. Output port q5 is connected to antenna ant2. RF switch q is also connected to control circuit k. RF switch q is a double-pole, multi-throw switch.

[0051] It can be seen that Figure 2 The RF switch q in Figure 1 Compared with the RF switch p shown in FIG, the RF switch p has an additional output port q5 connected to the antenna ant2. When the control circuit k controls the input port of the RF switch to connect to the output port q5, the RF signal of the frequency band corresponding to the input port can be transmitted to the antenna ant2 to complete the RF signal transmission.

[0052] It should be understood that Figure 1 and Figure 2 The RF module shown is only used to illustrate the structure of the RF module. In some possible implementations, the RF module may include more RF links, and the RF switch in the RF module may include more input ports and more output ports. This application does not specifically limit this.

[0053] As can be seen from the above description, RF switches play a crucial role in RF modules. However, when a switch connects to multiple RF links, it requires more components to accommodate the needs of different RF links. This results in higher insertion loss, port standing waves, switch area, and insertion loss in high-power branches, all of which affect RF module performance.

[0054] In order to solve the above problems, the present application provides a radio frequency switch and a control method for the radio frequency switch, wherein the radio frequency switch has the characteristics of small insertion loss, port standing wave, switch area, and insertion loss of the high-power branch.

[0055] The RF switch provided in the embodiment of the present application can be applied to electronic devices. In the embodiment of the present application, the electronic device refers to a communication device provided with an antenna and a RF module, such as a mobile phone, a tablet computer, a wearable device (such as a smart watch), a vehicle-mounted device, a laptop computer (Laptop), a desktop computer, etc. Exemplary embodiments of electronic devices include but are not limited to devices equipped with Or portable terminals with other operating systems.

[0056] As an example, see Figure 3 , is a structural diagram of an electronic device 300 provided in an embodiment of the present application.

[0057] like Figure 3 As shown, the electronic device 300 may include a processor 301, a communication module 302, and a display screen 303, etc.

[0058] The processor 301 may include one or more processing units. For example, the processor 301 may include an application processor (AP), a modem processor, a graphics processing unit (GPU), an image signal processor (ISP), a controller, a memory, a video stream codec, a digital signal processor (DSP), a baseband processor, and / or a neural-network processing unit (NPU). Different processing units may be independent devices or integrated into one or more processors 301.

[0059] The processor 301 may also be provided with a memory for storing instructions and data.

[0060] Electronic device 300 implements display functionality through a GPU, display screen 303, and processor 301. The GPU is a microprocessor for image processing that connects display screen 303 and the application processor. The GPU is used to perform mathematical and geometric calculations and render graphics. Display screen 303 is used to display images, video streams, and the like.

[0061] The communication module 302 may include antenna 1, antenna 2, a mobile communication module 302A, and a wireless communication module 302B. The aforementioned radio frequency module may be disposed in the mobile communication module 302A and / or the wireless communication module 302B.

[0062] The wireless communication function of the electronic device 300 can be implemented through antenna 1, antenna 2, mobile communication module 302A, wireless communication module 302B, modem processor and baseband processor.

[0063] The mobile communication module 302A can provide solutions for wireless communications, including 2G / 3G / 4G / 5G, applied to the electronic device 300. The mobile communication module 302A may include at least one filter, a switch, a power amplifier, a low-noise amplifier, etc. The mobile communication module 302A can receive electromagnetic waves from the antenna 1, filter, amplify, and perform other processing on the received electromagnetic waves, and transmit them to the modem processor for demodulation. The mobile communication module 302A can also amplify the signal modulated by the modem processor and convert it into electromagnetic waves for radiation via the antenna 1. In some embodiments, at least some of the functional modules of the mobile communication module 302A can be set in the processor 301. In some embodiments, at least some of the functional modules of the mobile communication module 302A can be set in the same device as at least some of the modules of the processor 301.

[0064] The wireless communication module 302B can provide wireless communication solutions for application in the electronic device 300, including wireless local area networks (WLAN) (such as wireless fidelity (Wi-Fi) networks), Bluetooth (BT), global navigation satellite system (GNSS), frequency modulation (FM), near field communication technology (NFC), infrared technology (IR), etc.

[0065] like Figure 3As shown, in some implementations, the electronic device 300 may also include an external memory interface 310, an internal memory 304, a universal serial bus (USB) interface 311, a battery 314, an audio module 306, a speaker 306A, a receiver 306B, a microphone 306C, a headphone interface 306D, a sensor module 305, a button 309, an indicator 308, a camera 307, and the like.

[0066] The external memory interface 310 can be used to connect an external memory card, such as a Micro SD card, to expand the storage capacity of the electronic device 300. The external memory card communicates with the processor 301 via the external memory interface 310 to implement data storage functions. For example, files such as music and video streams can be stored on the external memory card.

[0067] The internal memory 304 can be used to store computer executable program code, which includes instructions. The processor 301 executes the instructions stored in the internal memory 304 to execute various functional applications and data processing of the electronic device 300, such as the control method of the radio frequency switch provided in the embodiment of the present application.

[0068] The electronic device 300 can implement audio functions such as music playback and recording through the audio module 306 , the speaker 306A, the receiver 306B, the microphone 306C, the headphone jack 306D, and the application processor 301 .

[0069] The indicator 308 may be an indicator light, which may be used to indicate the charging status, power level change, messages, missed calls, notifications, etc.

[0070] The above describes the electronic device used in the RF switch provided in the embodiments of the present application. It should be understood that the structure illustrated in this embodiment does not constitute a specific limitation on the electronic device. In other embodiments, the electronic device may include more or fewer components than shown, or combine or separate certain components, or arrange the components differently. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

[0071] To facilitate understanding, before specifically introducing the radio frequency switch provided in the embodiments of the present application, the general structure of the radio frequency switch is first described.

[0072] In an RF switch, a link is provided between any input port and an output port that can be connected to the input port. In embodiments of the present application, such a link is referred to as a switch link. In other words, a switch link is provided between any input port and an output port that can be connected to the input port. The end of the switch link connected to the input port can be referred to as the first end, and the end connected to the output port can be referred to as the second end.

[0073] by Figure 1 Taking the RF switch p shown as an example, if each input port of the RF switch can be connected to the output port p4, a switch link is set between the input port p1 and the output port p4, a switch link is set between the input port p2 and the output port p4, and a switch link is set between the input port p3 and the output port p4.

[0074] by Figure 2 Taking RF switch q as an example, if each input port of the RF switch can be connected to each output port, then there is a switch link between input port q1 and output port q4, a switch link between input port q2 and output port q4, and a switch link between input port q3 and output port q4. Furthermore, there is a switch link between input port q1 and output port q5, a switch link between input port q2 and output port q5, and a switch link between input port q3 and output port q5. In other words, there are six switch links between the three input ports and the two output ports of RF switch p.

[0075] If a certain input port of the RF switch cannot be connected to a certain output port, a switch link may not be set between the input port and the output port. Figure 1 If the input port p1 cannot be connected to the output port p4, then no switch link may be set between the input port p1 and the output port p4. Figure 2 If the input port q1 cannot be connected to the output port q4, no switch link may be set between the input port q1 and the output port q4.

[0076] It should be understood that in an RF switch, when a switch link is disconnected, the connection between the input port and the corresponding output port of the switch link is disconnected; when the switch link is connected, the connection between the input port and the corresponding output port of the switch link is disconnected. The input port corresponding to the switch link refers to the input port to which the switch link is connected, and the output port corresponding to the switch link refers to the output port to which the switch link is connected. These details will not be repeated hereafter.

[0077] Please refer to Figure 4 , is a schematic diagram of a switch link provided in the example of this application. Figure 4As shown, the switch link may include a series link 403 and a parallel link 404. The series link 403 is connected in series between the input port 401 of the RF switch and the output port 402 of the RF switch. One end of the parallel link 404 is connected to the input port 401, and the other end is grounded. Both the series link 403 and the parallel link 404 are connected to the control circuit 405.

[0078] Both series link 403 and parallel link 404 are composed of multiple MOS transistors (Metal-Oxide-Semiconductor Field-Effect Transistors) connected in series. In the embodiments of the present application, MOS transistors can also be referred to as field-effect transistors. In the embodiments of the present application, MOS transistors can also be replaced with other components that can be connected and disconnected and have a certain breakdown voltage, which is not limited here. For ease of explanation, the following uses MOS transistors as an example and will not be repeated.

[0079] In the embodiments of the present application, "connecting MOS transistors in series" means that the source and drain of each MOS transistor are connected in series. For example, "connecting MOS transistors t1, t2, and t3 in series" means that the source of MOS transistor t1 is connected to the drain of MOS transistor t2, and the source of MOS transistor t2 is connected to the drain of MOS transistor t3. The MOS transistors in series can all be P-type or N-type, without limitation.

[0080] The connection between the series link 403 and the control circuit 405 means that the gate of each MOS transistor in the series link 403 is connected to the control circuit 405. In this way, the control circuit 405 can control the on and off of each MOS transistor in the series link 403, thereby controlling the on and off of the series link 403. It should be understood that Figure 4 In the switch link, the series link 403 is disconnected, that is, the connection between the input port 401 and the output port 402 corresponding to the switch link is disconnected, that is, the switch link is disconnected. Therefore, the control circuit 405 can control the on and off of the switch link.

[0081] The parallel link 404 is connected to the control circuit 405, which means that the gate of each MOS transistor in the parallel link 404 is connected to the control circuit 405. In this way, the control circuit 405 can control the on and off of each MOS transistor in the parallel link 404, thereby controlling the on and off of the parallel link 404.

[0082] The purpose of providing parallel link 404 in the switch chain is to improve the isolation between the input ports. For example, when the switch chain needs to be disconnected, control circuit 405 can control series link 403 to be disconnected and parallel link 404 to be connected. This allows the RF signal received by input port 401 to be directed to the ground terminal via parallel link 404, without interfering with the RF signals of other input ports. This improves the isolation between input port 401 and other input ports. The ground terminal of the parallel link can also be referred to as the third terminal.

[0083] It should be understood that when the switch link needs to be connected, the control link 405 can control the serial link 403 to be connected and control the parallel link 404 to be disconnected.

[0084] Figure 4 This term is used to describe the structure of a switch link, and therefore does not limit the number of MOS transistors in a series link or a parallel link. In practical applications, when the breakdown voltage of the MOS transistor is constant, the number of MOS transistors in a parallel link is determined based on the RF voltage of the RF link to which the parallel link is connected, and the number of MOS transistors in a series link is determined based on the RF voltage of other RF links in the RF switch, excluding the RF link to which the series link is connected. The breakdown voltage of a MOS transistor refers to the voltage that can break down the MOS transistor. The RF voltage of an RF link refers to the voltage of the RF signal transmitted in the RF link.

[0085] Specifically, the breakdown voltage of the parallel link, that is, the product of the breakdown voltage of the MOS tube and the number of MOS tubes in the parallel link, should be greater than the RF voltage of the RF link to which the parallel link is connected. In this way, it is possible to avoid the parallel link being broken down by the RF signal when the switch link is connected, that is, the series link is connected and the parallel link is disconnected. The breakdown voltage of the series link, that is, the product of the breakdown voltage of the MOS tube and the number of MOS tubes in the series link, should be greater than the RF voltage of other RF links. Among them, other RF links refer to RF links in the RF switch other than the RF link connected to the series link.

[0086] It should be noted that, in this solution, a MOS tube can also be provided for each of the series link and the parallel link. The breakdown voltage of the MOS tube in the parallel link is greater than the RF voltage of the RF link to which the parallel link is connected. The breakdown voltage of the MOS tube in the series link is greater than the RF voltage of other RF links. However, this may place higher requirements on the MOS tube process and result in higher costs for the RF switch. Therefore, in the embodiment of the present application, multiple general-purpose MOS tubes can be connected in series in the series link and the parallel link. The general-purpose MOS tube refers to a MOS tube with a breakdown voltage of a fixed volt, such as a silicon material MOS tube with a breakdown voltage of 2 volts, etc., which will not be described in detail later.

[0087] Below is Figure 1A structure such as the one shown is provided between the input port and the output port of the RF switch. Figure 4 The switch chain shown is used as an example to illustrate the breakdown voltage requirements of each switch chain.

[0088] Please refer to Figure 5 , is a schematic diagram of a switch link in a radio frequency switch provided for implementation of this application. Figure 1 The RF switch p shown, namely, input port p1, is connected to the RF link corresponding to the LTE band or NR band, for receiving RF signals in the LTE band or NR band. Input port p2 is also connected to the RF link corresponding to the LTE band or NR band, for receiving RF signals in the LTE band or NR band. Input port p3 is connected to the RF link corresponding to the GSM band, for receiving RF signals in the GSM band. Output port p4 is connected to antenna ant1.

[0089] In addition, a switch link y1 is provided between the input port p1 and the output port p4, a switch link y2 is provided between the input port p2 and the output port p4, and a switch link y3 is provided between the input port p3 and the output port p3.

[0090] It should be understood that when only input port p3 and output port p4 of RF switch p are connected, the RF signal received by input port p3 is transmitted from input port p3 to output port p4. The series link in switch link y3 is connected, and the parallel link is disconnected. The series link in switch link y2 is disconnected, and the parallel link is connected. The series link in switch link y1 is disconnected, and the parallel link is connected. Thus, the parallel link in switch link y3, the series link in switch link y2, and the series link in switch link y1 all need to be able to withstand the voltage of the RF signal received by input port p3, i.e., the voltage of the RF signal in the GSM band.

[0091] When only input port p1 and output port p4 are connected in RF switch p, the RF signal received at input port p1 is transmitted from input port p3 to output port p4. The series link in switch link y1 is connected, while the parallel link is disconnected. The series link in switch link y2 is disconnected, while the parallel link is connected. The series link in switch link y3 is disconnected, while the parallel link is connected. In this way, the parallel link in switch link y1, the series link in switch link y2, and the series link in switch link y3 must all be able to withstand the voltage of the RF signal received at input port p1, that is, the voltage of the RF signal in the LTE band or the NR band.

[0092] For example, the RF voltage of the RF link corresponding to the GSM band is V1. The RF voltage of the RF link corresponding to the LTE band or the NR band is V2. Figure 5As shown, the number of MOS transistors connected in series in the parallel link of switch link y3, the series link of switch link y2, and the series link of switch link y1 can be set to 14. The breakdown voltage of these 14 MOS transistors after being connected in series is greater than V1. The number of MOS transistors connected in series in the series link of switch link y3, the parallel link of switch link y2, and the parallel link of switch link y1 can be set to 10. The breakdown voltage of these 10 MOS transistors after being connected in series is greater than V2. In this way, the series link or parallel link in each switch link can be guaranteed not to be broken down by RF signals.

[0093] In the RF field, power and voltage can be converted to each other, so the RF voltage of each RF link can also be expressed in terms of power. For example, the power of the RF link corresponding to the GSM band is around 36dBm, while the power of the RF link corresponding to the LTE band or NR band is around 26.5dBm. Figure 5 The breakdown voltage of 14 MOS transistors connected in series corresponds to a power greater than 36dBm, and the breakdown voltage of 10 MOS transistors connected in series corresponds to a power greater than 26.5dBm. For ease of explanation, the subsequent description only uses voltage and does not elaborate.

[0094] MOS tubes have inherent on-resistance. An increase in the number of MOS tubes in a series link will increase the on-resistance of the series link, resulting in an increase in the insertion loss of the switch link (such as the high-power branch) in the RF switch. Among them, insertion loss can also be called insertion loss, which refers to the loss of energy or gain when a circuit device or branch circuit is added to a certain circuit. The high-power branch is a switch link in which the power (voltage) of the RF signal in the connected RF link is relatively large. For the switch link in the above-mentioned RF switch, if the attenuation of the signal after the signal flows through is small, the insertion loss of the switch link is small, and the insertion loss of the RF switch is also small. If the attenuation of the signal after the signal flows through is large, the insertion loss of the switch link is large, and the insertion loss of the RF switch is also large. Similarly, for the high-power branch in the above-mentioned RF switch, if the attenuation of the signal after the signal flows through is small, that is, the insertion loss of the high-power branch is small, and if the attenuation of the signal after the signal flows through is large, the insertion loss of the high-power branch is large.

[0095] Also, please refer to Figure 6 , is a schematic diagram of parasitic parameters of a MOS tube provided in an embodiment of the present application. Figure 6 As shown, the gate, drain, and source of the MOS transistor have inherent parasitic parameters such as R1, L1, L2, C1, C2, and C3. Therefore, when the series link of switch link y3 is turned on, the parallel link of switch link y3, the series link of switch link y2, and the series link of switch link y1 are equivalent to parasitic elements connected in parallel with the series link of switch link y3. When there are a large number of MOS transistors and the parasitic parameters are too large, the insertion loss of the RF switch will also increase.

[0096] Therefore, when designing a radio frequency switch, the number of MOS tubes should be reduced as much as possible while ensuring that the series link and the parallel link are not broken down.

[0097] Figure 5 The insertion loss of the RF switch shown is relatively large. In order to make the comparison of the effect before and after applying this solution more intuitive, the following is an improvement. Figure 5 The number of input ports and the number of switch links of the RF switch shown are obtained to obtain the RF switch B1, and then the RF switch B1 is simulated. For example, the RF switch B1 and Figure 5 Compared with the RF switch of , 7 new input ports are added. These 7 new input ports are connected to the RF links corresponding to the LTE band or NR band. There are 7 switch links that are exactly the same as switch link y1 or switch link y2 between the 7 new input ports and the output port p4. Take the high-power branch in RF switch B1, i.e. switch link y3, as an example. Figure 7 , is a schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application. Figure 7 As shown, the insertion loss of the switch link y3 at 1 GHz is 1.275 dB, which is a relatively large value.

[0098] The standing wave at the port of RF switch B1 is also relatively large. Please refer to Figure 8 , is a schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application. The switch link is a high-power branch in the radio frequency switch B1, namely, switch link y3. Figure 8 The port impedance of the switch link in the RF switch is illustrated by the Smith chart. For ease of understanding, the Smith chart is briefly introduced below.

[0099] The Smith chart includes a resistance line, an impedance circle, and a reactance arc. The resistance line is the horizontal axis. Multiple tangent circles are impedance circles. The point where the largest impedance circle intersects the resistance line to the left is the short-circuit point, while the point where it intersects the resistance line to the right is the open-circuit point. The center of the circle is the matching point. Arcs radiating from the open-circuit point to the circumference are reactance arcs.

[0100] Each point on the Smith chart represents a complex impedance value. Impedance refers to the ability of a circuit to block a point, and is composed of real resistance and imaginary reactance.

[0101] The resistance line and reactance arc are lines of equal imaginary parts, also called lines of equal reactance, where the reactance at all points is neither positive nor negative. The portion above the resistance line is called the inductive region, where the reactance at all points is positive. The portion below the resistance line is called the capacitive region, where the reactance at all points is negative.

[0102] The impedance circle is a line of equal real parts, also known as a line of equal resistance, where the resistance of all points on it is equal.

[0103] The resistance at the short-circuit point is 0 ohm, and the reactance is also 0 ohm. The resistance at the open-circuit point is infinite, and the reactance is 0 ohm. The resistance at the matching point is 50 ohm (it can also be 75 ohm, etc., this is just an example), and the reactance is 0 ohm.

[0104] In addition, the Smith chart also includes multiple admittance circles ( Figure 8 not shown), susceptance arc ( Figure 8 (not shown). The conductance of all points on each admittance circle is equal. The susceptance of all points on each susceptance arc is equal.

[0105] In the embodiment of the present application, the Smith chart can be understood as a graph, where each point on the graph corresponds to multiple data, including frequency, impedance, reflection coefficient, standing wave ratio, admittance, insertion loss, etc.

[0106] Figure 8 In the figure, Curve 1 shows the port impedance curve for switch link y3 of RF switch B1 between 600 MHz and 6 GHz. It can be seen that the port impedance of switch link y3 between 600 MHz and 6 GHz is far from the center of the Smith circle, that is, far from the 50 ohm matching point. Therefore, the port standing wave of switch link y3 is large, and the corresponding port standing wave of RF switch B1 is also large.

[0107] In addition, the RF switch B1 requires 240 MOS tubes. The large number of MOS tubes required will also result in a larger switch area.

[0108] Based on the above description, it can be seen that the insertion loss, port standing wave, and switch area of ​​the RF switches used in the relevant solutions are relatively large.

[0109] The radio frequency switch provided in the embodiment of the present application can be Figure 5 The RF switch shown or with Figure 5 The RF switch with a similar structure as shown (such as the RF switch B1 described above) is optimized to reduce the insertion loss, port standing wave and switch area of ​​the RF switch.

[0110] It should be understood that the RF switch provided in the embodiment of the present application can also be a newly designed RF switch with smaller insertion loss, port standing wave, and switch area based on the parameter information of the RF switch to be designed. Among them, the RF switch to be designed can also be referred to as the first RF switch, and the parameter information of the RF switch may include the number of input ports of the RF switch, the number of output ports, the connectivity relationship between each input port and each output port, and the voltage of the RF signal received by each input port. Among them, the connectivity relationship between each input port and each output port is used to indicate whether each input port can be connected to each output port. The voltage of the RF signal received by the input port is the RF voltage of the RF link to which the input port is connected in the aforementioned embodiment, which will not be elaborated here.

[0111] It should also be noted that the above-mentioned optimization of the RF switch refers to optimizing the switch link in the RF switch, and the above-mentioned design of a RF switch refers to designing the switch link in the RF switch. Optimizing the switch link in the RF switch is also a process of designing the switch link in the RF switch, so it can also be called designing the switch link in the RF switch. The embodiment of the present application does not make a strict distinction between the two scenarios, and will be uniformly referred to as designing the switch link in the RF switch, and will not be repeated here. Further, as in the aforementioned embodiment, the switch link is composed of a series link and a parallel link, and the series link and the parallel link are both composed of components that can be turned on and off and have a certain breakdown voltage, such as MOS tubes, and have their own breakdown voltage requirements. Therefore, in the embodiment of the present application, designing the switch link in the RF switch can refer to designing the connection relationship of the MOS tubes in the series link and the parallel link under the premise of meeting the breakdown voltage requirements.

[0112] The following is a detailed introduction to the method for designing the radio frequency switch provided in the embodiment of the present application.

[0113] Please refer to Figure 9 , is a flow chart of a method for designing a radio frequency switch provided in an embodiment of the present application. Figure 9 As shown, the method may include the following steps.

[0114] S901: Acquire parameter information of a first radio frequency switch.

[0115] The parameter information is used to indicate the number of input ports, the number of output ports, the connectivity between each input port and each output port, the voltage of the radio frequency signal received by each input port, and the like.

[0116] In some possible implementations, the parameter information of the first RF switch is Figure 5The parameter information of the RF switches shown is the same. S901 shows that the parameter information of the first RF switch is three input ports and one output port, all three input ports are connected to the output port, the voltage of the RF signal received by input port p1 and input port p2 is V1, and the voltage of the RF signal received by input port p3 is V2.

[0117] S902: Determine each switch link according to the parameter information.

[0118] For ease of description, any one of the above switch links is referred to as a first link, and the first link is connected to the first input port and the first output port of the first RF switch.

[0119] The first link satisfies the following conditions: the breakdown voltage of the parallel link in the first link is greater than the voltage of the RF signal received by the first input port, and the breakdown voltage of the series link in the first link is greater than the voltage of the RF signal received by the input ports that can be connected to the first output port, excluding the first input port. In other words, the breakdown voltage of the series link in the first link is greater than the maximum voltage of the RF signal received by the input ports that can be connected to the first output port, excluding the first input port.

[0120] If the parameter information of the first RF switch is the same as Figure 5 The parameter information of the RF switch shown is the same as that of the RF switch. Figure 5 The RF switch shown is similar.

[0121] Each switch link in the RF switch provided in the embodiment of the present application also satisfies the following conditions: the series links in the switch links that meet the first preset condition share a common link, and the breakdown voltage of the common link is greater than zero. The first preset condition is that they are connected to the same output port, and the breakdown voltage of the series link is greater than the breakdown voltage of the parallel link. Any switch link in the switch links that meet the first preset condition is referred to as a second link, and the breakdown voltage of the series link of the second link excluding the common link is greater than or equal to the breakdown voltage of the parallel link in the second link.

[0122] For example, the parameter information of the first RF switch is Figure 5 As an example, the parameter information of the RF switch shown in FIG. 1 is the same, and the stacked MOS tube is used in the switch link to achieve the breakdown voltage requirements of the series link and the parallel link. Then the switch link in the RF switch designed in this application can be as follows Figure 10 It should be noted that the RF switch provided in this application may include any number of switch links, and here only three switch links are taken as an example and will not be described in detail.

[0123] Please refer to Figure 10, is a schematic diagram of a switch link in a radio frequency switch provided in an embodiment of the present application. It can be seen that based on Figure 5 The parameter information of the RF switch shown in the figure, the RF switch provided in the embodiment of the present application includes a first switch chain 1001, a second switch chain 1002, and a third switch chain 1003.

[0124] The first switch chain 1001 is connected between input port p1 and output port p4, the second switch chain 1002 is connected between input port p2 and output port p4, and the third switch chain 1003 is connected between input port p3 and output port p4. The gates of the MOS transistors in each switch chain are connected to the control circuit k.

[0125] The parallel links in the first switch chain 1001 include 10 MOS transistors, and the series links include 14 MOS transistors. The parallel links in the second switch chain 1002 include 10 MOS transistors, and the series links include 14 MOS transistors. The first and second switch chains 1001 and 1002 share a common link 1004, which includes 4 MOS transistors. The parallel links in the third switch chain 1003 include 14 MOS transistors, and the series links include 10 MOS transistors.

[0126] It can be seen that Figure 10 The RF switch shown is Figure 5 The RF switches shown have the same functionality.

[0127] For example, when input port p1 and output port p4 are connected and the other input ports and output port p4 are disconnected, common link 1004 is connected. In first switch chain 1001, all 10 MOS transistors whose series links are not in common link 1004 are turned on, and the parallel links are disconnected. In second switch chain 1002, all series links except common link 1004 are disconnected, and the parallel links are connected. In third switch chain 1003, the series links are disconnected, and the parallel links are turned on.

[0128] and Figure 5 Compared to the RF switch shown, Figure 10 In the RF switch shown, the series link of the first switch link 1001 and the series link of the second switch link 1002 share a common link 1004 including four MOS transistors. Therefore, the RF switch uses a small number of MOS transistors, and the insertion loss, port standing wave, switch area, and insertion loss of the high-power branch of the RF switch are all small.

[0129] To make the comparison more intuitive, Figure 5 The RF switch shown in the simulation is similar to the Figure 10The number of input ports and switch links of the RF switch shown in the figure are used to obtain the RF switch E1, and then the RF switch E1 is simulated. Figure 10 Compared to the RF switch shown in FIG. 1 , 7 new input ports are added, each of which is connected to a RF link corresponding to the LTE band or the NR band. Seven switch links identical to the first switch link 1001 or the second switch link 1002 are respectively provided between the seven new input ports and the output port p4. That is, the series link includes 10 MOS transistors and 4 MOS transistors located on the common link 1004.

[0130] The RF switch E1 includes a total of 208 MOS transistors, which is much smaller than the 240 MOS transistors in the RF switch B1. Therefore, the switching area of ​​the RF switch E1 is relatively small.

[0131] Take the high power branch in the RF switch E1, i.e. the third switch link 1003, as an example. Figure 11 , is a schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application. Figure 11 As shown, the insertion loss of the third switch link 1003 at 1 GHz is 0.369 dB, which is also much smaller than the insertion loss of the switch link y3 in the RF switch B1 at 1 GHz, which is 1.275 dB.

[0132] The RF switch E1's port standing wave is also relatively small. Figure 12 , is a schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application. The switch link is a high-power branch in the radio frequency switch E1, namely the third switch link 1003. Figure 12 As shown, Curve 2 shows the port impedance curve of the third switch chain 1003 in RF switch E1 between 600 MHz and 6 GHz. It can be seen that the port impedance of the third switch chain 1003 between 600 MHz and 6 GHz is closer to the center of the Smith circle, that is, closer to the 50 ohm matching point. Therefore, the port standing wave of the third switch chain 1003 is small, and the corresponding port standing wave of RF switch E1 is also small.

[0133] Based on the above comparison, it can be seen that the RF switch provided by the embodiments of the present application has low insertion loss, port standing wave, switch area, and high-power branch insertion loss, resulting in excellent RF performance. Further examples are provided below. To simplify the drawings, the control circuit connected to the MOS is omitted in the following figures and will not be further described.

[0134] Please refer to Figure 13 , is a schematic diagram of a switch link of a radio frequency switch provided in an embodiment of the present application. The radio frequency switch is Figure 2 The RF switch q shown is a double-pole multi-throw switch. Figure 13 As shown, two switch links are set between each input port and each output port of the RF switch, the two switch links share a parallel link, and the series links of the two switch links are connected to the output port q4 and the output port q5 respectively. Figure 5 The RF switch shown is similar, Figure 13 In the RF switch shown, each series link and parallel link should not be broken down by the RF signal during operation. For details, please refer to the description in the above embodiment and will not be repeated here. Figure 13 The annotation in .

[0135] It can be seen that Figure 13 The RF switch shown includes a total of 110 MOS tubes. The number of MOS tubes required is large, so the switch area, insertion loss, port standing wave, etc. of the RF switch are all large.

[0136] In order to further improve the related technology Figure 13 The isolation between antenna ant1 and antenna ant2 in the RF switch shown in the figure is achieved by adding grounded links at output port q4 and output port q5 respectively. The breakdown voltage of the grounded links is greater than the maximum voltage of the RF signal received by each switch link, that is, greater than the voltage of the RF signal in the maximum power branch. In this way, the switch link of the RF switch is as follows: Figure 14 As shown. Among them, Figure 14 The bold part indicates Figure 13 Compared with the newly added links.

[0137] In order to make the comparison of the effects before and after applying this solution more intuitive, Figure 14 The number of input ports and switch links of the RF switch shown in the figure are used to obtain the RF switch B2, and then the RF switch B2 is simulated. Figure 14 Compared to the RF switch, the RF switch adds seven new input ports. These seven new input ports are similar to input ports q1 and q2, and are all connected to the RF links corresponding to the LTE or NR bands. The switch link between the seven new input ports and output port q4 is the same as the switch link between input port q1 or input port q2 and output port q4. The switch link between the seven new input ports and output port q5 is the same as the switch link between input port q1 or input port q2 and output port q5.

[0138] First, it can be determined that the RF switch B2 includes 404 MOS tubes, so the switch area is relatively large.

[0139] Secondly, the insertion loss of the high-power branch in the RF switch B2, that is, the switch link between the input port q3 and the output port q4 or the input port q3 and the output port q5, is relatively large. Taking the switch link between the input port q3 and the output port q4 as an example, please refer to Figure 15 , is a schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application. Figure 15 As shown, the insertion loss of the switch link between the input port q3 and the output port q4 at 1 GHz is 1.398 dB, which is a relatively large value.

[0140] Finally, the port standing wave of RF switch B2 is relatively large. Taking the high power branch of RF switch B2 as an example, please refer to Figure 16 , is a schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application. Figure 16 As shown in Figure 3, Curve 3 shows the port impedance curve for the switch link between input port q3 and output port q4 in RF switch B2 between 600 MHz and 6 GHz. It can be seen that the port impedance of the switch link between input port q3 and output port q4 between 600 MHz and 6 GHz is far from the center of the Smith circle, that is, far from the 50 ohm matching point. Therefore, the port standing wave of the switch link between input port q3 and output port q4 is large, and the corresponding port standing wave of RF switch B2 is also large.

[0141] The following Figure 13 and Figure 14 The RF switch shown in FIG. 1 is optimized to obtain the RF switch provided in the embodiment of the present application. Figure 13 The RF switch optimization process is shown.

[0142] First, get Figure 13 The RF switch parameter information shown is as follows. It should be understood that the RF switch parameter information is: 3 input ports, 2 output ports, and connectivity between all 3 input ports and 2 output ports. The voltage of the RF signal received by input ports p1 and p2 is V1, and the voltage of the RF signal received by input port p3 is V2.

[0143] Next, each switch link is determined based on the parameter information. Any switch link in the switch link is referred to as a first link, and the first link is connected to the first input port and the first output port. The first link satisfies the following conditions: the breakdown voltage of the parallel link in the first link is greater than the voltage of the RF signal received by the first input port, and the breakdown voltage of the series link in the first link is greater than the voltage of the RF signal received by the input ports that can be connected to the first output port, except for the first input port. In addition, the switch link connected to the first input port shares the parallel link of the first link.

[0144] In this way, we can get Figure 13 However, the RF switch provided in the embodiment of the present application also has the following requirements.

[0145] Among the determined switch links, the series links in the switch links that meet the first preset condition share a common link, and the breakdown voltage of the common link is greater than zero. The first preset condition is that they are connected to the same output port, and the breakdown voltage of the series link is greater than the breakdown voltage of the parallel link. Any switch link in the switch links that meet the first preset condition is referred to as a second link, and the breakdown voltage of the series links of the second link, excluding the common link, is greater than or equal to the breakdown voltage of the parallel links in the second link.

[0146] In this way, we can get Figure 17 The switching link of the RF switch is shown in FIG. Figure 17 The series link between input port q1 and output port q4 includes 14 MOS transistors, 4 of which are located in a common link and are shared with the series link between input port q2 and output port q4. Similarly, the series link between input port q1 and output port q5 includes 14 MOS transistors, 4 of which are located in a common link and are shared with the series link between input port q2 and output port q5.

[0147] Figure 17 The RF switch shown includes 82 MOS tubes, which is much smaller than Figure 13 Therefore, the RF switch provided by the embodiment of the present application has the characteristics of small insertion loss, port standing wave, and switch area.

[0148] The following introduces Figure 14 The RF switch optimization process is shown.

[0149] because Figure 14 The parameter information of the RF switch shown is the same as Figure 13 The parameter information of the RF switch shown is the same. Therefore, the switch link designed by the method of the RF switch provided by the embodiment of the present application can be Figure 17 I will not elaborate on this here.

[0150] In order to improve the isolation between antenna ant1 and antenna ant2, the embodiment of the present application Figure 17The RF switch shown is further optimized. For example, a ground link can be established between the output port q4 and the ground, and the breakdown voltage of the ground link is greater than the voltage of the RF signal received by each input port connected to the output port q4. A ground link can be established between the output port q5 and the ground, and the breakdown voltage between the ground link and the ground is greater than the voltage of the RF signal received by each input port connected to the output port q5. In this way, the breakdown voltage of the common link needs to be greater than the voltage of the RF signal received by the switch link where the common link is located, that is, Figure 17 In the example, the breakdown voltage of the common link between the input port q1 and the output port q5 is greater than the voltage of the RF signal received by the input port q1 or the input port q2. Figure 17 The number of MOS tubes in the public link should be expanded to 10, and the following is obtained: Figure 18 The switching chain of the RF switch is shown.

[0151] Please refer to Figure 18 , it can be seen that when input port q1 and output port q4 are connected and the other input ports and output ports are disconnected, the common link between input port q1 and output port q5 can withstand the voltage of the RF signal received by input port q1. The series link between input port q1 and output port q5 that is not in the common link is connected. Therefore, the common link between input port q1 and output port q5 should be able to withstand the voltage of the RF signal received by input port q1. Therefore, 10 MOS transistors are set on this common link. The common link between input port q1 and output port q4 is similar and will not be described in detail here.

[0152] In order to compare with the RF switch B2 in the above embodiment, the Figure 18 The number of input ports and the number of switch links of the RF switch shown are used to obtain the RF switch E2, and then the RF switch E2 is simulated. Figure 18 Compared to the RF switch shown in Figure 1, the new RF switch has seven additional input ports. These seven additional input ports are similar to input ports q1 and q2, and are all connected to RF links corresponding to the LTE or NR bands. The switch link between the seven additional input ports and output port q4 is the same as the switch link between input port q1 or input port q2 and output port q4. The switch link between the seven additional input ports and output port q5 is the same as the switch link between input port q1 or input port q2 and output port q5.

[0153] First, it can be determined that the RF switch E2 includes 262 MOS transistors, which is much smaller than the 404 MOS transistors in the RF switch B2. Therefore, the switching area of ​​the RF switch E2 is relatively small.

[0154] Secondly, the insertion loss of the high-power branch in the RF switch E2, that is, the switch link between the input port q3 and the output port q4 or the input port q3 and the output port q5, is relatively small. Take the switch link between the input port q3 and the output port q4 as an example, please refer to Figure 19 , is a schematic diagram of the insertion loss of a switch link in a radio frequency switch provided in an embodiment of the present application. Figure 19 As shown, the insertion loss of the switch link between the input port q3 and the output port q4 at 1 GHz is 0.5 dB, which is much smaller than the 1.398 dB in RF switch B.

[0155] Finally, the port standing wave of RF switch E2 is relatively small. Taking the high power branch of RF switch E2 as an example, please refer to Figure 20 , is a schematic diagram of the port impedance of a switch link in a radio frequency switch provided in an embodiment of the present application. Figure 20 As shown, Curve 4 shows the port impedance curve for the switch link between input port q3 and output port q4 in RF switch E2 between 600 MHz and 6 GHz. It can be seen that the port impedance of the switch link between input port q3 and output port q4 between 600 MHz and 6 GHz is close to the center of the Smith circle, that is, it is close to the 50 ohm matching point. Therefore, the port standing wave of the switch link between input port q3 and output port q4 is small, and the corresponding port standing wave of RF switch E2 is also small.

[0156] It should be noted that the RF switch provided in the embodiment of the present application does not limit the number of switch chains. The above is only an example for a clearer introduction to the present solution.

[0157] In summary, the RF switch provided in the embodiment of the present application has the characteristics of small insertion loss, port standing wave, switch area, and insertion loss of the high-power branch, and has good RF performance.

[0158] An embodiment of the present application also provides a control method for a radio frequency switch, which is applied to a control circuit, wherein the control circuit is connected to each switch link in the radio frequency switch of any one of the first aspects, and the method includes: receiving a first instruction. The first instruction is used to instruct the control circuit to control the third link of multiple second links of the radio frequency switch to be connected and the first link to be disconnected. A first signal is sent to the first link and the non-public links in each second link except the third link, and a second signal is sent to the public link and the non-public link of the third link. The first signal is used to indicate that the corresponding link is disconnected, and the second signal is used to indicate that the corresponding link is connected.

[0159] In one possible implementation, when the switch link includes a grounded third end, sending a first signal to the first link and non-common links among the second links, and sending a second signal to the common link and non-common links of the third link, includes: sending the first signal to the link between the first and second ends of the first link, the non-common links among the second links other than the third link, and the link between the second and third ends of the third link. Sending the second signal to the link between the second and third ends of the first link, the link between the second and third ends of the second links other than the third link, the common link, and non-common links of the third link.

[0160] In a possible implementation, when the RF switch includes a ground link, sending the first signal to the first link and the non-public links in each second link, sending the second signal to the public link and the non-public link of the third link, further includes: sending the first signal to the ground link.

[0161] An embodiment of the present application further provides an electronic device, comprising an antenna and one or more memories. The antenna is connected to one or more processors via a radio frequency link. The one or more memories are coupled to the one or more processors, and the one or more memories store computer instructions. When the one or more processors execute the computer instructions, the electronic device executes the radio frequency switch control method according to any one of the second aspects.

[0162] An embodiment of the present application further provides an electronic device, comprising a radio frequency chip for receiving and / or transmitting radio frequency signals, a radio frequency link for transmitting and / or processing radio frequency signals, an antenna for receiving and / or transmitting radio frequency signals, and the radio frequency switch according to any one of the first aspects. The radio frequency chip is connected to an input port of the radio frequency switch via the radio frequency link. The antenna is connected to an output port of the radio frequency switch.

[0163] The technical features of the above methods and electronic devices can all be applied to the radio frequency switch provided in the aforementioned embodiments, and thus similar beneficial effects can be achieved, which will not be described in detail here.

[0164] The above describes the design method of the switch link and the radio frequency switch provided by the present application in combination with specific features and embodiments thereof. Obviously, various modifications and combinations of the above features can be made without departing from the spirit and scope of the present application. Accordingly, this specification and the drawings are merely exemplary illustrations of the present application as defined by the appended claims, and are deemed to have covered any and all modifications, variations, combinations or equivalents within the scope of the present application. Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A radio frequency switch, characterized in that: comprising at least two groups of switch links; each group of switch links comprising a plurality of switch links connected at first ends, wherein the first ends of switch links in different groups of switch links are not connected, the first ends of the switch links being used to output radio frequency signals, and the second ends of the switch links being used to receive radio frequency signals; The multiple switch links in each group of switch links include a first link and multiple second links, the voltage of the radio frequency signal received by the first link is greater than the voltage of the radio frequency signal received by the second link, the breakdown voltage of each of the second links when disconnected is greater than the voltage of the radio frequency signal received by the first link, and the breakdown voltage of the first link when disconnected is greater than the voltage of the radio frequency signal received by each of the second links; The at least two groups of switch links include a first group of switch links and a second group of switch links, and the second end of at least one second link in the first group of switch links is identical to the second end of at least one second link in the second group of switch links in a one-to-one correspondence; The second links connected to the first ends include a common link; the common link is connected to the first ends of the second links, and a breakdown voltage of the common link when disconnected is greater than zero; The second links connected at the first end include a non-common link, and the second links with the same second end share the non-common link. The breakdown voltage of the non-common link when disconnected is greater than the voltage of the RF signal received by the corresponding second link.

2. The radio frequency switch according to claim 1, wherein: At least one MOS transistor is connected in series between the first and second ends of the switch link; the breakdown voltage of the switch link when it is disconnected is the breakdown voltage of all MOS transistors connected in series between the first and second ends in the corresponding switch link.

3. The radio frequency switch according to any one of claims 1 to 2, wherein: The switch link further includes a third terminal connected to ground; When the second end and the third end of the switch link are disconnected, the breakdown voltage is greater than the voltage of the radio frequency signal received by the corresponding switch link.

4. The radio frequency switch according to claim 3, characterized in that: At least one MOS transistor is connected in series between the second end and the third end of the switch chain; the breakdown voltage when the second end and the third end of the switch chain are disconnected is the breakdown voltage of all MOS transistors connected in series between the second end and the third end in the corresponding switch chain.

5. The radio frequency switch according to any one of claims 1 to 4, characterized in that: The RF switch further includes a ground link, one end of the ground link being connected to the first end of each switch link and the other end being grounded; a breakdown voltage of the ground link when disconnected is greater than a voltage of the RF signal received by the first link; The breakdown voltage of the common link is greater than the voltage of the radio frequency signal received by the corresponding second link.

6. The radio frequency switch according to any one of claims 1 to 5, characterized in that: The multiple switch links are all connected to a control circuit; the control circuit is used to control the connection and disconnection of the switch links.

7. The radio frequency switch according to claim 6, characterized in that: The control circuit is connected to the gate of the MOS tube in each switch link.

8. A method for controlling a radio frequency switch, characterized in that: Applied to a control circuit, the control circuit being connected to each switch link in the radio frequency switch according to any one of claims 1 to 7, the method comprising: Receive a first instruction; the first instruction is used to instruct the control circuit to control the third link of the multiple second links of the radio frequency switch to be connected and the first link to be disconnected; A first signal is sent to the first link and each non-public link in the second link except the third link, and a second signal is sent to the public link and the non-public link of the third link; the first signal is used to indicate that the corresponding link is disconnected, and the second signal is used to indicate that the corresponding link is connected.

9. The control method of the radio frequency switch according to claim 8, characterized in that: When the switch link includes a grounded third terminal, sending the first signal to the first link and the non-common link of each of the second links, and sending the second signal to the common link and the non-common link of the third link, includes: The first signal is sent to the link between the first end and the second end of the first link, the non-public links in each of the second links except the third link, and the link between the second end and the third end of the third link; and the second signal is sent to the link between the second end and the third end of the first link, the link between the second end and the third end of each of the second links except the third link, the public link, and the non-public link of the third link.

10. The control method of the radio frequency switch according to claim 9, characterized in that: When the RF switch includes a ground link, the sending of the first signal to the first link and the non-public link of each of the second links, and the sending of the second signal to the public link and the non-public link of the third link, further includes: The first signal is sent to the ground link.

11. An electronic device, characterized in that: The system comprises an antenna, a radio frequency link, one or more processors, and one or more memories; the antenna is connected to the one or more processors via the radio frequency link; the one or more memories are coupled to the one or more processors, and the one or more memories store computer instructions; When the one or more processors execute the computer instructions, the electronic device executes the method for controlling the radio frequency switch according to any one of claims 8 to 10.

12. An electronic device, characterized in that: The electronic device includes a radio frequency chip for receiving and / or sending radio frequency signals, a radio frequency link for transmitting and / or processing radio frequency signals, an antenna for receiving and / or transmitting radio frequency signals, and the radio frequency switch according to any one of claims 1 to 7; the radio frequency chip is connected to the input port of the radio frequency switch through the radio frequency link; and the antenna is connected to the output port of the radio frequency switch.

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