Perovskite quantum dot dispersions, preparation methods, printing methods, photolithographic patterning methods and applications for inkjet printing and photolithographic patterning.

Abstract

This invention relates to a perovskite quantum dot dispersion, its preparation method, printing method, photolithographic patterning method, and its applications for inkjet printing and photolithographic patterning. This dispersion synthesizes perovskite quantum dots in a one-pot process using polymer monomers, crosslinking agents, and photoinitiators, achieving high dispersibility, high stability, and high-resolution patterning of perovskite quantum dots during inkjet printing and photolithography. The perovskite quantum dot dispersion of this invention possesses excellent optical properties, chemical stability, and printability, and is widely applicable in fields such as Micro-LED, QLED displays, solar cells, and photodetectors.

Description

Technical Field

[0001] This invention relates to the field of nanotechnology, specifically to a perovskite quantum dot dispersion, its preparation method, printing method, photolithographic patterning method, and its applications for inkjet printing and photolithographic patterning. This dispersion enables high-resolution, high-precision patterning without compromising the optical properties of quantum dots, and has wide applications in Mini / Micro-LEDs, LCD backlight modules, photoelectric detection, and other fields. Background Technology

[0002] In the field of modern display technology, perovskite quantum dots are widely considered one of the key materials for next-generation display technologies due to their unique optical properties and wide color gamut coverage. The controllable size and tunable bandgap of perovskite quantum dots give them enormous application potential in fields such as light-emitting diodes (LEDs), solar cells, and photodetectors. Especially in Micro-LED and quantum dot display technologies (QLED), perovskite quantum dots can achieve high-efficiency light conversion and high color saturation, thus providing a more delicate and vivid visual experience.

[0003] However, applying perovskite quantum dots to practical inkjet printing and photolithography patterning processes presents several technical challenges. First, the stability of perovskite quantum dots is a particularly prominent issue. Due to their unique crystal structure and surface properties, perovskite quantum dots are prone to oxidation and hydrolysis in air, leading to a decrease in their luminescent properties. Furthermore, the dispersibility of quantum dots in solution is also a significant consideration. Uneven charge distribution on the surface of quantum dots can cause them to aggregate in solution, affecting uniform deposition and pattern clarity during inkjet printing and photolithography.

[0004] In inkjet printing, the viscosity and rheological properties of perovskite quantum dots directly affect print quality. Excessively high viscosity can lead to nozzle clogging, while excessively low viscosity can result in unstable ink ejection. Furthermore, temperature and humidity variations during inkjet printing can also negatively impact the stability of quantum dots. In photolithography, the photocurability of perovskite quantum dots is equally crucial. To achieve precise patterning, quantum dots need to rapidly transform from a liquid to a solid state under ultraviolet light irradiation. However, perovskite quantum dots themselves do not possess photocurability; this process requires the addition of photoinitiators and suitable photocuring monomers. This necessitates precise control of the types and proportions of these additives to ensure that the optical properties of the quantum dots are maintained while achieving rapid curing during the photocuring process.

[0005] In addition, the preparation cost of perovskite quantum dots is also a factor to consider. Although perovskite quantum dots have many advantages, their synthesis process is relatively complex and requires precise control of reaction conditions, such as temperature, time, and precursor concentration. Even small changes in these conditions can have a significant impact on the properties of the quantum dots, thus requiring extensive experimentation to optimize the preparation process.

[0006] In summary, although perovskite quantum dots hold great promise for applications in display technology, they still face numerous challenges in inkjet printing and photolithographic patterning. To overcome these challenges, in-depth research is needed on the stability mechanisms of perovskite quantum dots, dispersion optimization, inkjet printing parameter adjustments, and improvements to photopolymerization techniques. Summary of the Invention

[0007] This invention discloses a perovskite quantum dot dispersion, its preparation method, printing method, photolithographic patterning method, and its applications for inkjet printing and photolithography patterning. Through optimized formulation and preparation process, this dispersion achieves high stability and high-resolution patterning of perovskite quantum dots during inkjet printing and photolithography. The perovskite quantum dot dispersion of this invention possesses excellent optical properties, chemical stability, and printability, and can be widely used in Micro-LED, QLED displays, solar cells, photodetectors, and other fields. The preparation method of this invention is simple, efficient, and can be mass-produced, possessing excellent commercial prospects and social value.

[0008] A perovskite quantum dot dispersion for inkjet printing and photolithographic patterning, comprising the following key components:

[0009] Perovskite quantum dots: As the core component of ink, their chemical structure is APbX3, where A stands for MA. + FA + DMA + NH4 + Na + K + 、Rb + and Cs + At least one of them, X is F - Cl - ,Br - and I - At least one of the following. By precisely controlling the particle size and surface ligands, the high quality and stability of the nanocrystals are ensured.

[0010] Polymer monomers: Acrylic polymer monomers, including but not limited to the following: acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, isooctyl acrylate, lauryl acrylate, benzyl acrylate, cyclohexyl acrylate, perfluoroalkyl acrylate, hydroxyethyl phosphate acrylate, isobornyl acrylate, tetrahydrofuran methyl acrylate, and isobornyl methacrylate, as solvents for the synthesis of perovskite quantum dots.

[0011] Surface ligands: The dispersibility of perovskite quantum dots in acrylic monomer solutions can be improved by adding surface ligands such as tetraoctylammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate, and 3-aminopropyltrimethoxysilane.

[0012] Photoinitiator: Select a suitable photoinitiator, such as 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, phenylbenzophenone, 1-hydroxycyclohexylphenyl ketone, 2-methyl-1-(4-methylthiophenyl)-2-morpholino-1-propanone, triphenylphosphine, or benzoyl azobisisobutyronitrile, to achieve photocuring of the perovskite quantum dot dispersion.

[0013] Crosslinking agents: The mechanical strength and durability of perovskite quantum dot dispersions are enhanced by adding crosslinking agents such as 1,4-butanediol dimethacrylate, ethylene glycol dimethacrylate, trimethylolpropane trimethacrylate, dipentaerythritol tetraacrylate, and dimethacrylate tetramethacrylate.

[0014] Furthermore, based on the total mass of the quantum dot dispersion, the perovskite quantum dots comprise 1% to 60% (e.g., 1%, 5%, 10%, 20%, 30%, 40%, 50%, or 60%); the polymer monomers comprise 10% to 70% (e.g., 10%, 15%, 20%, 30%, 40%, 50%, 60%, or 70%); the surface ligands comprise 1% to 5% (e.g., 1%, 2%, 3%, 4%, or 5%); the photoinitiator comprises 1% to 10% (e.g., 1%, 2%, 3%, 4%, 5%, 7%, 9%, or 10%); and the crosslinking agent comprises 5% to 20% (e.g., 5%, 7%, 9%, 10%, 15%, 17%, or 20%).

[0015] Furthermore, CsPbX3 quantum dots are prepared by the following method, which includes the steps of: firstly, dissolving DMAPbBr3 in N,N-dimethylformamide, and then reacting it with Cs2CO3 dissolved in bis(2,4,4-trimethylpentyl)phosphonic acid to synthesize CsPbX3 quantum dots, wherein the molar ratio of DMAPbBr3 to Cs2CO3 is 3:1 to 1:3 (e.g., 3:1, 2:1, 1:1, 1:2 or 1:3), and the Cs2CO3 solution needs to be heated (e.g., heated to 120°C) during the synthesis process to ensure complete dissolution.

[0016] Furthermore, the perovskite quantum dots are CsPbX3 quantum dots, where X is selected from halogen elements bromine (Br), iodine (I), or chlorine (Cl).

[0017] Furthermore, polymer monomers, as solvents and film-forming aids for quantum dot synthesis, can form polymer layers that encapsulate quantum dots.

[0018] Furthermore, surface ligands are used to modulate the surface state of quantum dots, which helps to improve the dispersion stability and long-term stability of perovskite quantum dots.

[0019] Furthermore, photoinitiators possess photosensitive properties, enabling them to induce chemical cross-linking reactions under ultraviolet light or other suitable wavelengths of light to achieve curing.

[0020] Furthermore, the crosslinking agent enhances the strength and toughness of the internal network structure of the dispersion.

[0021] The molar ratios of the components in the dispersion are carefully designed so that the resulting perovskite quantum dot dispersion is suitable not only as an inkjet printing ink, but also as a photoresist material in the photolithography process.

[0022] A method for preparing a perovskite quantum dot dispersion for inkjet printing and photolithographic patterning includes the following steps:

[0023] DMAPbX3 was dissolved in N,N-dimethylformamide and sonicated to ensure complete dissolution. Simultaneously, Cs₂CO₃ was dissolved in bis(2,4,4-trimethylpentyl)phosphonic acid and heated until dissolved. In a beaker, isobornyl acrylate, tetramethacrylate dimethacrylate, and oleylamine were pre-mixed, and diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and triphenylphosphine photoinitiator were added. While continuously stirring, the DMAPbBr₃ and Cs₂CO₃ solutions were added dropwise, at which point a color change occurred, preparing a perovskite quantum dot dispersion. To further improve the dispersibility and luminescence efficiency of the perovskite quantum dots, tetraoctylammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate, 3-aminopropyltrimethoxysilane, and a mixed solution prepared from deionized water, anhydrous ethanol, and ammonia were added to the aforementioned system. The mixture was heated at 25-65 °C (e.g., 55 °C). o Under condition C), the mixture is continuously stirred for 2-12 hours (e.g., 6 hours) to obtain a high-performance perovskite quantum dot dispersion with photocrosslinking properties. This dispersion is suitable for inkjet printing or photolithography processes and not only has high luminous efficiency but also excellent stability.

[0024] A method for applying a perovskite quantum dot dispersion for inkjet printing and photolithographic patterning includes the following steps:

[0025] a. Inkjet printing: The prepared perovskite quantum dot dispersion is loaded into an inkjet printer, and inkjet printing is performed according to the preset pattern and parameters. During the inkjet printing process, the ink flow rate and speed should be controlled to obtain a clear pattern.

[0026] b. Photolithographic Patterning: Perovskite quantum dot dispersion is spin-coated onto a substrate and photolithographically patterned. Exposure time and light intensity are controlled to obtain the desired patterning effect. Post-processing, such as drying and curing, is then performed on the photolithographically patterned perovskite quantum dot pattern to improve its quality and stability. The methods and conditions for post-processing should be determined according to experimental requirements.

[0027] c. Applications: The perovskite quantum dot patterns obtained through inkjet printing and photolithography can be applied to relevant fields, such as optoelectronic devices, display technology, and biosensors. The application methods and conditions should be determined based on actual needs.

[0028] The perovskite quantum dot dispersion of the present invention has the significant characteristic of having the ability to be cured by light at room temperature.

[0029] Another important feature of the perovskite quantum dot dispersion of the present invention is its superior dispersion stability and storage stability.

[0030] The perovskite quantum dot dispersion of the present invention is specifically indicated to be applicable to fields including but not limited to inkjet printing and photolithography patterning technologies.

[0031] The perovskite quantum dot dispersion preparation process of this invention emphasizes its simplicity, efficiency, cost-effectiveness, and suitability for large-scale industrial production.

[0032] The beneficial effects of this invention are:

[0033] The perovskite quantum dot dispersion of the present invention has the following advantages:

[0034] 1. High Stability: By selecting suitable acrylic monomer solvents, crosslinking agents, surface ligands, and photoinitiators, the prepared perovskite quantum dot dispersion exhibits excellent colloidal stability, ensuring the stability of perovskite quantum dots during inkjet printing and photolithography. 2. Good Dispersibility: The addition of surface ligands achieves uniform dispersion of perovskite quantum dots in organic solvents, avoiding aggregation. 3. Fast Photocuring Speed: Through the selection and optimization of photoinitiators, rapid photocuring of the perovskite quantum dot dispersion is achieved, improving production efficiency. 4. High Mechanical Strength: The addition of crosslinking agents enhances the mechanical strength and durability of the cured perovskite quantum dot dispersion film, extending the product's lifespan. Attached Figure Description

[0035] Figure 1 The fluorescence spectrum of the CsPbBr3 quantum dot dispersion in Example 1 of this invention is shown.

[0036] Figure 2 These are before and after photos of the CsPbBr3 quantum dot dispersion in Example 1 of this invention after being placed in room temperature air for one month.

[0037] Figure 3 This is a microscopic fluorescence image of the inkjet-printed CsPbBr3 quantum dot microarray in Example 1 of the present invention.

[0038] Figure 4 The fluorescence spectrum of the inkjet-printed CsPbBr3 quantum dot microarray in Example 1 of this invention is shown.

[0039] Figure 5 This is a micro-fluorescence image of the CsPbBr3 quantum dot microarray prepared by photolithography in Example 1 of the present invention.

[0040] Figure 6 This is a scanning electron microscope image of the CsPbBr3 quantum dot microarray fabricated by photolithography in Example 1 of the present invention.

[0041] Figure 7 The fluorescence spectrum of the CsPbBr3 quantum dot dispersion in Example 2 of this invention is shown.

[0042] Figure 8 These are before and after photos of the CsPbBr3 quantum dot dispersion placed in room temperature air for two days in Example 2 of this invention.

[0043] Figure 9 The fluorescence spectrum of the CsPb(ClBr)3 quantum dot dispersion in Example 3 of this invention is shown.

[0044] Figure 10 The fluorescence spectrum of the CsPb(BrI)3 quantum dot dispersion in Example 4 of this invention is shown. Detailed Implementation

[0045] The technical solution of the present invention will be further described in detail below with reference to specific embodiments. It should be understood that the following embodiments are merely illustrative and explanatory of the present invention, and should not be construed as limiting the scope of protection of the present invention. All technologies implemented based on the above content of the present invention are covered within the scope of protection intended by the present invention.

[0046] Unless otherwise stated, the raw materials and reagents used in the following examples are commercially available products or can be prepared by known methods.

[0047] Example 1: A CsPbBr3 quantum dot dispersion

[0048] The specific preparation method of the CsPbBr3 quantum dot dispersion in this embodiment is as follows: First, 8 mmol of DMAPbBr3 was dissolved in 5 mL of N,N-dimethylformamide, and ultrasonic treatment was used to ensure complete dissolution, resulting in a DMAPbBr3 solution. Simultaneously, 1 mmol of Cs2CO3 was dissolved in an equal volume of 5 mL of bis(2,4,4-trimethylpentyl)phosphonic acid solution, and heated to 120°C. oC2CO3 solution was obtained by promoting dissolution. Separately, 1 mmol of tetraoctylammonium bromide was dissolved in 2.5 mL of toluene to obtain a tetraoctylammonium bromide solution. In a beaker, 2 mL of isobornyl acrylate, 0.5 mL of tetramethacrylate, and 0.5 mL of oleylamine were pre-mixed, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator were added to obtain mixed solution A. 100 μL of LMAPbBr3 solution and 400 μL of C2CO3 solution were added dropwise to mixed solution A, at which point a color change occurred, preparing a CsPbBr3 quantum dot dispersion. To further improve the dispersion quality and luminescence efficiency of CsPbBr3 quantum dots, 400 μL of tetraoctylammonium bromide solution, 50 μL of trimethoxysilane, 200 μL of trimethylpropyl methacrylate, 50 μL of 3-aminopropyltrimethoxysilane, and 25 μL of a specially prepared mixed solution B (composed of 1 mL deionized water, 5 mL anhydrous ethanol, and 100 mL 28 wt% ammonia) were added to the aforementioned system to obtain mixed solution C. Mixed solution C was heated at 55 °C. o After continuous stirring at C for 6 h, a high-performance CsPbBr3 perovskite quantum dot dispersion was finally obtained, such as... Figure 1 As shown, the fluorescence emission peak of this CsPbBr3 quantum dot dispersion is located at 511 nm, with a full width at half maximum (FWHM) of only 21 nm, and a high luminescence quantum yield of 91%. Furthermore, this CsPbBr3 quantum dot dispersion exhibits excellent dispersibility, showing no significant precipitation after being placed in air at room temperature for one month. Figure 2 ).

[0049] When fabricating CsPbBr3 quantum dot patterns using electrohydrodynamic inkjet printing technology (SIJ-S050), the glass substrate needs to be thoroughly cleaned. This involves ultrasonic cleaning with acetone, isopropanol, and deionized water for 15 minutes each, followed by purging and drying with nitrogen. To prevent nozzle clogging, the CsPbBr3 quantum dot dispersion is pre-filtered using a 0.22 μm organic filter membrane. A printhead with a diameter of 3.8 to 4.2 μm is used for microarray printing. Figure 3 A uniform fluorescent CsPbBr3 quantum dot microarray with a coverage area of ​​1 square centimeter was demonstrated, containing 250 × 250 dots, each with a diameter of 10 μm and a spacing of 30 μm between dots. The texture of all dots remained consistent throughout the printed area, demonstrating the reliability and reproducibility of using electrohydrodynamic inkjet printing technology to fabricate large-area CsPbBr3 quantum dot microarrays. Figure 4As shown, the prepared CsPbBr3 quantum dot microarray emitted a wavelength of 512 nm and had an extremely narrow half-width at half-maximum (WHM) of 18 nm. In the photolithography fabrication of the perovskite quantum dot pattern, the glass substrate was first thoroughly cleaned, followed by ultrasonic cleaning and a 5-minute plasma treatment (Air, 100 W). The CsPbBr3 quantum dot dispersion uniformly coated on the glass substrate was then subjected to a 100 W plasma treatment. o Preheat and bake at C for 60 seconds. Expose the selected area to ultraviolet light (365 nm, 70 mJ / cm²) using a pre-designed photomask. -2 Rinse with ethanol solution for about 20 to 30 seconds, then rinse further with deionized water to obtain a refined CsPbBr3 quantum dot pattern with good luminescent properties. Figure 5 As shown, the fabricated 40 μm wide stripes and 50 μm mesh exhibit high contrast between bright green and dark areas, as well as clear and sharp edges. Furthermore, scanning electron microscopy images reveal a smooth surface and distinct interface between the exposed and unexposed areas. Cross-sectional scanning electron microscopy images further confirm that all exposed lines have been successfully cured, while the unexposed portions have been completely removed. A magnified view of a single stripe shows a pattern thickness of 8.2 μm (…). Figure 6 ).

[0050] Example 2: A CsPbBr3 quantum dot dispersion

[0051] The control sample of the CsPbBr3 quantum dot dispersion without surface ligand treatment in this embodiment was prepared as follows: First, 8 mmol of DMAPbBr3 was dissolved in 5 mL of N,N-dimethylformamide, and sonicated to ensure complete dissolution. Simultaneously, 1 mmol of Cs2CO3 was dissolved in an equal volume of 5 mL of bis(2,4,4-trimethylpentyl)phosphonic acid solution and heated to 120°C. o C is used to promote dissolution. Additionally, 1 mmol of tetraoctylammonium bromide is dissolved in 2.5 mL of toluene. In a beaker, 2 mL of isobornyl acrylate, 0.5 mL of tetramethacrylate dimethacrylate, and 0.5 mL of oleylamine are pre-mixed, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator are added to obtain mixed solution A. 100 μL of DMAPbBr3 solution and 400 μL of Cs2CO3 solution are added dropwise to the above mixed solution A. A color change occurs in the solution, preparing a CsPbBr3 quantum dot dispersion. Figure 7As shown, the fluorescence emission peak of the CsPbBr3 quantum dot dispersion is located at 510 nm, with a full width at half maximum (FWHM) of only 21 nm, and a luminescence quantum yield of only 57%. Furthermore, the CsPbBr3 quantum dot dispersion exhibits significant precipitation after being placed in air at room temperature for two days. Figure 8 This indicates that surface ligand treatment has a significant impact on the luminescence efficiency and colloidal stability of the CsPbBr3 quantum dot dispersion. The inkjet printing and photolithographic patterning of the CsPbBr3 quantum dots were performed as described in Example 1.

[0052] Example 3: A CsPb(ClBr)3 quantum dot dispersion

[0053] The specific preparation method of the CsPb(ClBr)3 quantum dot dispersion in this embodiment is as follows: First, 4 mmol of DMAPbCl3 and 4 mmol of DMAPbBr3 were dissolved in 5 mL of N,N-dimethylformamide, and the solution was sonicated to ensure complete dissolution. Simultaneously, 1 mmol of Cs2CO3 was dissolved in an equal volume of 5 mL of bis(2,4,4-trimethylpentyl)phosphonic acid solution and heated to 120°C. o C was used to promote dissolution. Additionally, 1 mmol of tetraoctylammonium bromide was dissolved in 2.5 mL of toluene. In a beaker, 2 mL of isobornyl acrylate, 0.5 mL of tetramethacrylate dimethacrylate, and 0.5 mL of oleylamine were pre-mixed, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator were added to obtain mixed solution A. 100 μL of a mixed solution of DMAPbCl3 and DMAPbBr3 and 400 μL of Cs2CO3 solution were added dropwise to the above mixed solution A. A color change occurred in the solution, preparing a CsPb(ClBr)3 quantum dot dispersion. To further improve the dispersion quality and luminescence efficiency of CsPb(ClBr)3 quantum dots, 400 μL of tetraoctylammonium bromide solution, 50 μL of trimethoxysilane, 200 μL of trimethylpropyl methacrylate, 50 μL of 3-aminopropyltrimethoxysilane, and 25 μL of a specially prepared mixed solution B (composed of 1 mL deionized water, 5 mL anhydrous ethanol, and 100 mL 28 wt% ammonia) were added to the aforementioned system to obtain mixed solution C. Mixed solution C was heated at 55 °C. o After continuous stirring at C for 6 h, a high-performance perovskite quantum dot dispersion of CsPb(ClBr)3 was finally obtained, as shown below. Figure 9 As shown, the fluorescence emission peak of the CsPb(ClBr)3 quantum dot dispersion is located at 450 nm, with a full width at half maximum (FWHM) of 19 nm and a luminescence quantum yield of 41%.

[0054] The inkjet printing and photolithographic patterning of CsPb(ClBr)3 quantum dots are the same as described in Example 1.

[0055] Example 4: A CsPb(BrI)3 quantum dot dispersion

[0056] The specific preparation method of the CsPb(BrI)3 quantum dot dispersion in this embodiment is as follows: First, 4 mmol of DMAPbBr3 and 4 mmol of DMAPbI3 were dissolved in 5 mL of N,N-dimethylformamide, and ultrasonic treatment was used to ensure complete dissolution. Simultaneously, 1 mmol of Cs2CO3 was dissolved in an equal volume of 5 mL of bis(2,4,4-trimethylpentyl)phosphonic acid solution, and heated to 120°C. o C was used to promote dissolution. Additionally, 1 mmol of tetraoctylammonium bromide was dissolved in 2.5 mL of toluene. In a beaker, 2 mL of isobornyl acrylate, 0.5 mL of tetramethacrylate dimethacrylate, and 0.5 mL of oleylamine were pre-mixed, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator were added to obtain mixed solution A. 100 μL of a mixed solution of DMAPbBr3 and DMAPbI3 and 400 μL of Cs2CO3 solution were added dropwise to the above mixed solution A. A color change occurred in the solution, preparing a CsPb(BrI)3 quantum dot dispersion. To further improve the dispersion quality and luminescence efficiency of CsPb(BrI)3 quantum dots, 400 μL of tetraoctylammonium bromide solution, 50 μL of trimethoxysilane, 200 μL of trimethylpropyl methacrylate, 50 μL of 3-aminopropyltrimethoxysilane, and 25 μL of a specially prepared mixed solution B (composed of 1 mL deionized water, 5 mL anhydrous ethanol, and 100 mL 28 wt% ammonia) were added to the aforementioned system to obtain mixed solution C. Mixed solution C was heated at 55 °C. o After continuous stirring at C for 6 h, a high-performance CsPb(BrI)3 perovskite quantum dot dispersion was finally obtained, such as... Figure 10 As shown, the fluorescence emission peak of the CsPb(BrI)3 quantum dot dispersion is located at 625 nm, with a full width at half maximum (FWHM) of 33 nm and a luminescence quantum yield of 38%.

[0057] The inkjet printing and photolithographic patterning of CsPb(BrI)3 quantum dots are the same as described in Example 1.

[0058] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Those skilled in the art can make equivalent substitutions or modifications based on the above description, and all such substitutions and modifications should be included within the scope of protection of the present invention.

Claims

1. A perovskite quantum dot dispersion for inkjet printing and lithographic patterning, characterized in that, The quantum dot dispersion liquid comprises the following components: (a) perovskite quantum dots: as the core component of ink, the chemical structure is APbX3, wherein A is Cs + , X is at least one of Cl - , Br - and I - ; (b) polymer monomer, the polymer monomer is selected from one or more of isobornyl acrylate and isobornyl methacrylate; (c) surface ligand, the surface ligand is selected from one or more of tetraoctyl ammonium bromide, trimethoxysilane, tris (trimethoxysilyl) propyl methacrylate and 3-aminopropyl trimethoxysilane; and (d) photoinitiator, the photoinitiator is a mixture of 2,4,6-trimethylbenzoyl-diphenyl phosphine oxide and triphenyl phosphine; (E) crosslinking agent, the crosslinking agent is dipentaerythritol tetraacrylate; the mass percentage content of perovskite quantum dots is 1% to 50% based on the total mass of the quantum dot dispersion liquid; the mass percentage content of polymer monomer is 10% to 70%; the mass percentage content of surface ligand is 1% to 5%; the mass percentage content of photoinitiator is 1% to 10%; and the mass percentage content of crosslinking agent is 5% to 20%.

2. The perovskite quantum dot dispersion according to claim 1, characterized in that, The CsPbX3 quantum dots are prepared by a method comprising the following steps: firstly dissolving DMAPbX3 in N,N-dimethylformamide, and then reacting with Cs2CO3 dissolved in bis(2,4,4-trimethylpentyl) phosphinic acid to synthesize CsPbX3 quantum dots, wherein the molar ratio of DMAPbX3 to Cs2CO3 is 3:1-1:3, and the Cs2CO3 solution needs to be heated during the synthesis to ensure complete dissolution.

3. A perovskite quantum dot dispersion for inkjet printing and lithographic patterning, characterized in that, The quantum dot dispersion liquid comprises the following components: (a) perovskite quantum dots: as the core component of ink, the chemical structure is APbX3, wherein A is Cs + , X is at least one of Cl - , Br - and I - ; (b) polymer monomers, the polymer monomers are selected from one or more of isobornyl acrylate and isobornyl methacrylate; (c) surface ligands, the surface ligands comprise tetraoctyl ammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate, 3-aminopropyl trimethoxysilane, and a mixed solution composed of deionized water, anhydrous ethanol and ammonia water; wherein the volume ratio of tetraoctyl ammonium bromide:trimethoxysilane:tris(trimethoxysilyl)propyl methacrylate:3-aminopropyl trimethoxysilane:mixed solution = (100-600 μL):(10-100 μL):(50-600 μL):(10-100 μL):(20-100 μL); and (d) a photoinitiator, the photoinitiator is a mixture of 2,4,6-trimethylbenzoyl-diphenyl phosphine oxide and triphenyl phosphine; (E) a crosslinking agent, the crosslinking agent is dipentaerythritol tetraacrylate; the mass percentage of perovskite quantum dots is 1% to 50% of the total mass of the quantum dot dispersion liquid; the mass percentage of polymer monomers is 10% to 70%; the mass percentage of surface ligands is 1% to 5%; the mass percentage of photoinitiators is 1% to 10%; and the mass percentage of crosslinking agents is 5% to 20%.

4. A method for preparing the perovskite quantum dot dispersion liquid according to claim 3, characterized by, comprising the following steps: firstly, pre-mixing the polymer monomer and crosslinking agent, while adding diphenyl (2,4,6-trimethylbenzoyl) phosphine oxide and triphenyl phosphine photoinitiator; then, dropwise adding the dissolved DMAPbBr3 and Cs2CO3 solution; further adding the dissolved surface ligand tetraoctylammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate, 3-aminopropyl trimethoxysilane, and a mixed solution formed by mixing deionized water, anhydrous ethanol and ammonia water; the mixed solution is stirred at a constant temperature of 25-65 o C for 2-12 hours to complete the preparation of high-quality perovskite quantum dot dispersion.

5. An inkjet printing method based on the perovskite quantum dot dispersion liquid according to claim 1 or 3, characterized by, The method comprises the following steps: firstly cleaning the glass substrate, filtering the dispersion liquid by using an organic filter membrane, and precisely inkjet printing the microarray by using a nozzle with a diameter in the range of 1.3-4.2 microns.

6. A photolithographic patterning method based on the perovskite quantum dot dispersion liquid according to claim 1 or 3, characterized in that, The method comprises the following steps: The substrate is cleaned and subjected to a plasma surface activation treatment; the dispersion liquid is coated to form a uniform perovskite quantum dot film, and pre-baking is performed; The film is selectively exposed by using 365 nm wavelength ultraviolet light to pass through a mask plate; After exposure, the film is washed by using a solvent, so that a fine perovskite quantum dot pattern is obtained.

7. Use of the perovskite quantum dot dispersion liquid according to claim 1 or 3, characterized in that, The method is applied to the manufacture of Micro-LED, quantum dot light emitting diode display, solar cell or photoelectric detector electronic and optoelectronic devices.

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