Method and apparatus for determining collector-emitter voltage during IGBT turn-off delay process

Abstract

This invention provides a method and apparatus for determining the collector-emitter voltage during the IGBT turn-off delay process. The method includes: determining the gate current expression based on a pre-established IGBT parasitic capacitance model using the gate-emitter capacitance current, gate-collector capacitance current, and gate-collector capacitance voltage; determining the gate-collector capacitance expression using the gate-collector capacitance voltage; obtaining the relationship between the collector-emitter voltage and the gate voltage and gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression; and solving the relationship to determine the expression for the change of the collector-emitter voltage over time. This invention, by determining the expression for the change of the collector-emitter voltage over time, enables the estimation of the collector-emitter voltage by observing the gate voltage and gate current of the IGBT device, achieving accurate and efficient monitoring of the collector-emitter voltage during the IGBT turn-off delay process, and providing a basis for IGBT turn-off process monitoring and analysis.

Description

Technical Field

[0001] This invention relates to the field of IGBT technology, and more particularly to a method and apparatus for determining the collector-emitter voltage during the IGBT turn-off delay process. Background Technology

[0002] IGBT devices combine the advantages of high switching speed of MOSFET devices and low conduction losses of bipolar devices, and have been widely used in new energy converters, flexible DC transmission equipment, and dynamic reactive power compensation equipment. However, there is currently no method to accurately and efficiently monitor the collector-emitter voltage during the IGBT turn-off delay process. Summary of the Invention

[0003] To address the problems existing in the prior art, the main objective of this invention is to provide a method and apparatus for determining the collector-emitter voltage during the IGBT turn-off delay process, thereby achieving accurate monitoring of the collector-emitter voltage during the IGBT turn-off delay process.

[0004] To achieve the above objectives, embodiments of the present invention provide a method for determining the collector-emitter voltage during the IGBT turn-off delay process, the method comprising:

[0005] Based on the pre-established IGBT parasitic capacitance model, the gate current expression is determined using the gate emitter current, gate collector current, and gate collector voltage, and the gate collector capacitance expression is determined using the gate collector voltage.

[0006] Based on the expressions for gate current and gate-collector capacitance, the relationship between collector-emitter voltage and gate voltage, and gate-collector capacitance voltage is obtained. The relationship is then solved to determine the expression for the change of collector-emitter voltage with time.

[0007] Optionally, in one embodiment of the present invention, the method further includes:

[0008] Collect monitoring data corresponding to gate-emitter capacitance current, gate voltage, and gate current during the IGBT turn-off delay process;

[0009] Based on the monitoring data corresponding to the gate-emitter capacitor current, gate voltage, and gate current, and the expression for the change of collector-emitter voltage over time, the collector-emitter voltage monitoring value is determined to monitor the collector-emitter voltage.

[0010] Optionally, in one embodiment of the present invention, the relationship between the collector-emitter voltage and the gate voltage and gate-collector capacitance voltage is obtained based on the gate current expression and the gate-collector capacitance expression, including:

[0011] By combining the expressions for gate current and gate capacitance, and using the rated voltage of the IGBT, the relationship between the collector-emitter voltage, gate voltage, and gate-collector capacitance voltage can be obtained.

[0012] Optionally, in one embodiment of the present invention, solving the relational expression to determine the expression for the change of collector-emitter voltage over time includes:

[0013] This facilitates the calculation of the relationship between the gate turn-on voltage and the capacitor voltage, and determines the expression for the change of collector-emitter voltage over time.

[0014] This invention also provides a device for determining the collector-emitter voltage during the IGBT turn-off delay process, the device comprising:

[0015] The expression module is used to determine the gate current expression based on the pre-established IGBT parasitic capacitance model, using the gate emitter capacitor current, gate collector capacitor current and gate collector capacitor voltage, and to determine the gate collector capacitor expression using the gate collector capacitor voltage.

[0016] The collector-emitter voltage module is used to obtain the relationship between the collector-emitter voltage and the gate voltage and gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression, and to solve the relationship to determine the expression of the collector-emitter voltage changing with time.

[0017] Optionally, in one embodiment of the present invention, the apparatus further includes:

[0018] The monitoring data module is used to collect monitoring data corresponding to the gate-emitter capacitor current, gate voltage and gate current during the IGBT turn-off delay process.

[0019] The voltage monitoring module is used to determine the collector-emitter voltage monitoring value based on the monitoring data corresponding to the gate-emitter capacitor current, gate voltage, and gate current, as well as the expression of the collector-emitter voltage change over time, so as to monitor the collector-emitter voltage.

[0020] Optionally, in one embodiment of the present invention, the collector-emitter voltage module is also used to combine the gate current expression and the gate-collector capacitance expression, and to obtain the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage using the IGBT rated voltage.

[0021] Optionally, in one embodiment of the present invention, the collector-emitter voltage module is further used to solve the relationship using the gate voltage turn-on value and the capacitor voltage value to determine the expression for the change of collector-emitter voltage over time.

[0022] The present invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the above-described method.

[0023] The present invention also provides a computer-readable storage medium storing a computer program that performs the above-described methods by a computer.

[0024] The present invention also provides a computer program product, including a computer program / instructions, which, when executed by a processor, implement the steps of the above-described method.

[0025] This invention determines the expression for the change of collector-emitter voltage over time, enabling the estimation of collector-emitter voltage by observing the gate voltage and gate current of the IGBT device. This allows for accurate and efficient monitoring of the collector-emitter voltage during the IGBT turn-off delay process, providing a basis for IGBT turn-off process monitoring and analysis. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a flowchart illustrating a method for determining the collector-emitter voltage during the IGBT turn-off delay process according to an embodiment of the present invention.

[0028] Figure 2 This is a flowchart of collector-emitter voltage monitoring in an embodiment of the present invention;

[0029] Figure 3 This is a schematic diagram of the converter circuit structure in an embodiment of the present invention;

[0030] Figure 4 This is a schematic diagram of the IGBT turn-off transient process in an embodiment of the present invention;

[0031] Figure 5 This is a schematic diagram of the parasitic capacitance of the IGBT in an embodiment of the present invention;

[0032] Figure 6 This is a schematic diagram illustrating the variation of the gate capacitor capacitance with the gate capacitor voltage in an embodiment of the present invention;

[0033] Figure 7 This is a schematic diagram of a device for determining the collector-emitter voltage during the IGBT turn-off delay process according to an embodiment of the present invention.

[0034] Figure 8 This is a schematic diagram of the structure of the collector-emitter voltage determination device for the IGBT turn-off delay process in another embodiment of the present invention;

[0035] Figure 9 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0036] This invention provides a method and apparatus for determining the collector-emitter voltage during the IGBT turn-off delay process.

[0037] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] like Figure 1 The diagram shows a flowchart of a method for determining the collector-emitter voltage during the IGBT turn-off delay process according to an embodiment of the present invention. The execution subject of this method includes, but is not limited to, a computer. By determining the expression for the change of collector-emitter voltage over time, the present invention estimates the collector-emitter voltage by observing the gate voltage and gate current of the IGBT device, thereby achieving accurate and efficient monitoring of the collector-emitter voltage during the IGBT turn-off delay process and providing a basis for IGBT turn-off process monitoring and analysis. The method shown in the diagram includes:

[0039] Step S1: Based on the pre-established IGBT parasitic capacitance model, determine the gate current expression using the gate emitter capacitor current, gate collector capacitor current, and gate collector capacitor voltage, and determine the gate collector capacitance expression using the gate collector capacitor voltage.

[0040] Step S2: Based on the expressions for gate current and gate-collector capacitance, obtain the relationship between collector-emitter voltage and gate voltage, and gate-collector capacitance voltage, and solve the relationship to determine the expression for the change of collector-emitter voltage with time.

[0041] Among them, the IGBT parasitic capacitance model is as follows: Figure 5 As shown, the converter circuit structure is as follows: Figure 3 As shown, Figure 3 The diagram shown is a half-bridge circuit model, u GE U is the gate voltage. CE collector-emitter voltage (u) chip,CE L is the collector-emitter voltage of the chip. s,CE (for IGBT device package parasitic inductance), i C For collector current, u F FWD voltage (u chip,F L is the collector-emitter voltage of the chip. s,F (for parasitic inductance in FWD device packages), i F For FWD current, I L For the load inductor current (switching transient process, I) L L can be approximated as a constant value. s,1 L is the parasitic inductance value of the IGBT circuit. s,2 U is the parasitic inductance value of the FWD freewheeling circuit.DC The voltage across the capacitor is c. GE For the gate emitter capacitance, c GC For gate collector capacitance (Miller capacitance), c CE For a collector capacitor, the reference direction of voltage and current is at... Figure 3 The bid was successful. Specifically, the shutdown delay process is as follows: Figure 4 The t0 to t1 stages are shown.

[0042] Furthermore, using the gate emitter capacitor current, gate collector capacitor current, and gate collector capacitor voltage, the expression for the gate current is determined. Specifically, the gate current i G Including the gate emitter capacitor current i GE and gate capacitor current i GC It consists of two parts, as shown in the following formula.

[0043] i G =i GE +i GC (1)

[0044] The parasitic capacitance and current have the following relationship:

[0045]

[0046]

[0047] As an embodiment of the present invention, the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage is obtained according to the gate current expression and the gate-collector capacitance expression by: combining the gate current expression and the gate-collector capacitance expression, and using the IGBT rated voltage, the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage is obtained.

[0048] Specifically, by combining equations (1), (2), and (3), we obtain the expression for the gate current:

[0049]

[0050] Specifically, the gate collector capacitance expression is determined using the gate collector capacitance voltage; specifically, c... GC Is it following u GC The change in (gate collector capacitance voltage) is approximately considered to be c. GC Follow u GC Linear changes, such as Figure 6 As shown, the expression for the gate collector capacitance is given by equation (5).

[0051]

[0052] Substituting equation (5) into equation (4), we can further refine the expression for the gate current:

[0053]

[0054] Among them, U in equation (6) CES The rated voltage of the IGBT is given by equation (6). GE i G and u GC The correlation between the collector and emitter voltages is thus obtained. CE With gate voltage u GE , gate capacitor voltage u GC Relationship, u CE u GE and u GC The following relationship exists:

[0055] u CE =u GE -u GC (7)

[0056] As an embodiment of the present invention, solving the relational expression to determine the expression of the collector-emitter voltage change over time includes: using the gate turn-on voltage value and the capacitor voltage value to solve the relational expression to determine the expression of the collector-emitter voltage change over time.

[0057] To solve the relation, first transform equation (6) into:

[0058]

[0059] At time t0, there exists u GE =U G,on u CE =U DC u GC =U G,on -U DC Among them, U G,on It is the gate turn-on voltage, a circuit constant, and a fixed value.

[0060] Then, by solving the differential equation (8), we can obtain u. GC The pattern of change with time t:

[0061] u GC =g(t) (9)

[0062] Substituting equation (9) into equation (7), we get u CE The law governing the change of collector-emitter voltage u with time t. CE Expression for change over time:

[0063] u CE =u GE -g(t) (10)

[0064] Therefore, formula (10) can be used to achieve the collector-emitter voltage u. CEReal-time monitoring.

[0065] As an embodiment of the present invention, such as Figure 2 As shown, the method also includes:

[0066] Step S3: Collect monitoring data corresponding to the gate-emitter capacitor current, gate voltage, and gate current during the IGBT turn-off delay process.

[0067] Step S4: Based on the monitoring data corresponding to the gate-emitter capacitor current, gate voltage, and gate current, and the expression for the change of collector-emitter voltage over time, determine the collector-emitter voltage monitoring value to monitor the collector-emitter voltage.

[0068] In the IGBT turn-off delay process, the monitoring data corresponding to the gate-emitter capacitor current, gate voltage and gate current are collected. The monitoring data corresponding to the gate-emitter capacitor current, gate voltage and gate current are substituted into formula (10) for calculation, and the collector-emitter voltage monitoring value can be obtained, thereby realizing the accurate monitoring of the collector-emitter voltage.

[0069] Given the existing technology U CE Monitoring is difficult at the high-voltage end, and there are no relevant monitoring methods in actual engineering. (Gate voltage u) GE At the low-voltage end, waveforms are easy to obtain. This invention estimates the former through the latter, thus achieving status monitoring.

[0070] This invention determines the expression for the change of collector-emitter voltage over time, enabling the estimation of collector-emitter voltage by observing the gate voltage and gate current of the IGBT device. This allows for accurate and efficient monitoring of the collector-emitter voltage during the IGBT turn-off delay process, providing a basis for IGBT turn-off process monitoring and analysis.

[0071] like Figure 7 The figure shows a schematic diagram of a device for determining the collector-emitter voltage during the IGBT turn-off delay process according to an embodiment of the present invention. The device shown in the figure includes:

[0072] The expression module 10 is used to determine the gate current expression based on the pre-established IGBT parasitic capacitance model, using the gate emitter capacitor current, the gate collector capacitor current and the gate collector capacitor voltage, and to determine the gate collector capacitor expression using the gate collector capacitor voltage.

[0073] The collector-emitter voltage module 20 is used to obtain the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression, and solve the relationship to determine the expression of the collector-emitter voltage changing with time.

[0074] As one embodiment of the present invention, such as Figure 8 As shown, the device also includes:

[0075] The monitoring data module 30 is used to collect monitoring data corresponding to the gate-emitter capacitor current, gate voltage and gate current during the IGBT turn-off delay process.

[0076] The voltage monitoring module 40 is used to determine the collector-emitter voltage monitoring value based on the monitoring data corresponding to the gate-emitter capacitor current, the gate voltage and the gate current respectively, and the expression of the collector-emitter voltage change over time, so as to monitor the collector-emitter voltage.

[0077] As an embodiment of the present invention, the collector-emitter voltage module is also used to combine the gate current expression and the gate-collector capacitance expression, and to obtain the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage using the IGBT rated voltage.

[0078] As an embodiment of the present invention, the collector-emitter voltage module is also used to solve the relationship between the gate voltage turn-on value and the capacitor voltage value to determine the expression of the collector-emitter voltage change over time.

[0079] Based on the same concept as the aforementioned method for determining the collector-emitter voltage during IGBT turn-off delay, this invention also provides a device for determining the collector-emitter voltage during IGBT turn-off delay. Since the principle underlying this device is similar to the method for determining the collector-emitter voltage during IGBT turn-off delay, its implementation can be referenced to the implementation of the method for determining the collector-emitter voltage during IGBT turn-off delay; therefore, repetitions will not be repeated.

[0080] This invention determines the expression for the change of collector-emitter voltage over time, enabling the estimation of collector-emitter voltage by observing the gate voltage and gate current of the IGBT device. This allows for accurate and efficient monitoring of the collector-emitter voltage during the IGBT turn-off delay process, providing a basis for IGBT turn-off process monitoring and analysis.

[0081] The present invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the above-described method.

[0082] The present invention also provides a computer program product, including a computer program / instructions, which, when executed by a processor, implement the steps of the above-described method.

[0083] The present invention also provides a computer-readable storage medium storing a computer program that performs the above-described methods by a computer.

[0084] like Figure 9As shown, the electronic device 600 may also include: a communication module 110, an input unit 120, an audio processor 130, a display 160, and a power supply 170. It is worth noting that the electronic device 600 does not necessarily need to include these components. Figure 9 All components shown; in addition, the electronic device 600 may also include Figure 9 For components not shown, please refer to existing technologies.

[0085] like Figure 9 As shown, the central processing unit 100, sometimes also referred to as a controller or operating control, may include a microprocessor or other processor device and / or logic device. The central processing unit 100 receives inputs and controls the operation of various components of the electronic device 600.

[0086] The memory 140 may be, for example, one or more of a cache, flash memory, hard drive, removable media, volatile memory, non-volatile memory, or other suitable devices. It may store the aforementioned failure-related information, and also store a program for executing that information. The central processing unit 100 may execute the program stored in the memory 140 to perform information storage or processing, etc.

[0087] Input unit 120 provides input to central processing unit 100. Input unit 120 may be, for example, a keypad or touch input device. Power supply 170 provides power to electronic device 600. Display 160 displays images and text. Display may be, for example, an LCD display, but is not limited thereto.

[0088] The memory 140 can be a solid-state memory, such as a read-only memory (ROM), random access memory (RAM), a SIM card, etc. It can also be a memory that retains information even when power is off, can be selectively erased, and contains more data; examples of this type of memory are sometimes referred to as EPROMs. The memory 140 can also be some other type of device. The memory 140 includes a buffer memory 141 (sometimes referred to as a buffer). The memory 140 may include an application / function storage unit 142 for storing application programs and function programs or processes for executing the operation of the electronic device 600 via the central processing unit 100.

[0089] The memory 140 may also include a data storage unit 143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 144 of the memory 140 may include various drivers for the electronic device's communication functions and / or for performing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0090] The communication module 110 is a transmitter / receiver that transmits and receives signals via the antenna 111. The communication module (transmitter / receiver) 110 is coupled to the central processing unit 100 to provide input signals and receive output signals, which can be the same as in a conventional mobile communication terminal.

[0091] Based on different communication technologies, multiple communication modules 110 can be configured in the same electronic device, such as cellular network modules, Bluetooth modules, and / or wireless LAN modules. The communication module (transmitter / receiver) 110 is also coupled to a speaker 131 and a microphone 132 via an audio processor 130 to provide audio output via the speaker 131 and receive audio input from the microphone 132, thereby enabling typical telecommunications functions. The audio processor 130 may include any suitable buffer, decoder, amplifier, etc. Additionally, the audio processor 130 is coupled to a central processing unit 100, enabling on-device recording via the microphone 132 and on-device playback of stored audio via the speaker 131.

[0092] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0093] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0094] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0095] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0096] Specific embodiments have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this invention. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A method for determining the collector-emitter voltage during the IGBT turn-off delay process, characterized in that, The method includes: Based on the pre-established IGBT parasitic capacitance model, the gate current expression is determined using the gate emitter capacitor current, the gate collector capacitor current, and the gate collector capacitor voltage, and the gate collector capacitor expression is determined using the gate collector capacitor voltage. Based on the gate current expression and the gate-collector capacitance expression, the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage is obtained, and the relationship is solved to determine the expression of the collector-emitter voltage changing with time. Collect monitoring data corresponding to gate-emitter capacitance current, gate voltage, and gate current during the IGBT turn-off delay process; Based on the monitoring data corresponding to the gate emitter capacitor current, gate voltage, and gate current, and the expression for the change of the collector-emitter voltage over time, the collector-emitter voltage monitoring value is determined to monitor the collector-emitter voltage. The process of obtaining the relationship between the collector-emitter voltage and the gate voltage and gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression, and solving the relationship to determine the expression for the change of collector-emitter voltage with time includes: Gate current expression: （4） in, C GE The gate-collector capacitance is used; the expression for the gate-collector capacitance is determined using the gate-collector capacitance voltage. The expression for the gate-collector capacitance is: （5） Substituting equation (5) into equation (4), we can further refine the expression for the gate current: （6） in, U CES For the rated voltage of the IGBT, equation (6) is established u GE , i G and u GC The correlation between the collector and emitter voltages is thus obtained. u CE With gate voltage u GE , gate capacitor voltage u GC Relationship, u CE , u GE and u GC The following relationship exists: （7） To solve the relation, first transform equation (6) into: （8） exist t At time 0, there exists u GE = U G,on , u CE = U DC , u GC = U G,on - U DC ,in, U DC The voltage across the capacitor. U G,on It is the gate turn-on voltage, a circuit constant, and a fixed value. Then, by solving the differential equation (8), we obtain... u GC Over time t The pattern of change: （9） Substituting equation (9) into equation (7), we get u CE Over time t The changing pattern of collector-emitter voltage u CE Expression for change over time: （10） Therefore, formula (10) can be used to achieve the collector-emitter voltage. u CE Real-time monitoring.

2. A device for determining the collector-emitter voltage during the IGBT turn-off delay process, characterized in that, The device includes: The expression module is used to determine the gate current expression based on the pre-established IGBT parasitic capacitance model, using the gate emitter capacitor current, the gate collector capacitor current, and the gate collector capacitor voltage, and to determine the gate collector capacitor expression using the gate collector capacitor voltage. The collector-emitter voltage module is used to obtain the relationship between the collector-emitter voltage and the gate voltage and the gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression, and to solve the relationship to determine the expression of the collector-emitter voltage changing with time. The monitoring data module is used to collect monitoring data corresponding to the gate-emitter capacitor current, gate voltage and gate current during the IGBT turn-off delay process. The voltage monitoring module is used to determine the collector-emitter voltage monitoring value based on the monitoring data corresponding to the gate-emitter capacitor current, the gate voltage, and the gate current, as well as the expression for the change of the collector-emitter voltage over time, so as to monitor the collector-emitter voltage. The process of obtaining the relationship between the collector-emitter voltage and the gate voltage and gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression, and solving the relationship to determine the expression for the change of collector-emitter voltage with time includes: Gate current expression: （4） in, C GE The gate-collector capacitance is used; the expression for the gate-collector capacitance is determined using the gate-collector capacitance voltage. The expression for the gate-collector capacitance is: （5） Substituting equation (5) into equation (4), we can further refine the expression for the gate current: （6） in, U CES For the rated voltage of the IGBT, equation (6) is established u GE , i G and u GC The correlation between the collector and emitter voltages is thus obtained. u CE With gate voltage u GE , gate capacitor voltage u GC Relationship, u CE , u GE and u GC The following relationship exists: （7） To solve the relation, first transform equation (6) into: （8） exist t At time 0, there exists u GE = U G,on , u CE = U DC , u GC = U G,on - U DC ,in, U DC The voltage across the capacitor. U G,on It is the gate turn-on voltage, a circuit constant, and a fixed value. Then, by solving the differential equation (8), we obtain... u GC Over time t The pattern of change: （9） Substituting equation (9) into equation (7), we get u CE Over time t The changing pattern of collector-emitter voltage u CE Expression for change over time: （10） Therefore, formula (10) can be used to achieve the collector-emitter voltage. u CE Real-time monitoring.

3. An electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the method of claim 1.

4. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that enables a computer to execute the method of claim 1.

5. A computer program product, comprising a computer program / instructions, characterized in that, When the computer program / instructions are executed by the processor, they implement the steps of the method of claim 1.

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