A power driver chip

Abstract

This application relates to the technical field of power drive chips, and particularly relates to a power drive chip, including a high-voltage module that converts the power supply voltage into a required voltage, a linear voltage regulator module connected to the high-voltage module to output a reference voltage, a clock module that receives the reference voltage and outputs a maximum duty cycle signal and a diagnostic signal, a feedback module connected to the linear voltage regulator module that receives the reference voltage and the power supply peripheral voltage and outputs a high-level signal or a low-level signal, a PWM module that receives the diagnostic signal, the maximum duty cycle signal, and the high-level signal or the low-level signal and generates and outputs a pulse signal or generates a voltage regulation signal according to the maximum duty cycle signal and the high-level signal or the low-level signal, a voltage conversion module that receives the pulse signal and outputs a high-end high-voltage signal, and a signal transmission module connected to the voltage conversion module that transmits the high-end high-voltage signal to the electrical equipment of the electric vehicle. This application improves the application reliability of the electric vehicle battery.

Description

Technical Field

[0001] This application relates to the technical field of power drive chips, and particularly to a power drive chip. Background Art

[0002] A power drive chip, also known as a power management IC (Power Management IC, abbreviated as PMIC), is an integrated circuit specifically used for managing and controlling power supply. It is responsible for converting the electrical energy of a battery or other energy source into a stable voltage and current that matches the device's requirements, thus ensuring the normal operation of the device.

[0003] Currently, the mainstream power drive chip at this stage is a DCDC power drive chip, and the manufacturing process adopted is a 120V BCD process. With the increasing development of the electric vehicle industry, a voltage of 120V is no longer sufficient to meet the battery requirements of electric vehicles. At the same time, due to the complex actual application environment of electric vehicles, the upper limit requirements for voltage also fluctuate in different driving environments. Therefore, whether the application reliability of the battery can be ensured has become an important issue to be solved at present. Summary of the Invention

[0004] In order to improve the application reliability of electric vehicle batteries, this application provides a power drive chip, adopting the following technical solutions:

[0005] A power drive chip includes: a high-voltage ring generated by HVCMOS drive technology. A high-voltage field-effect transistor and a bootstrap high-voltage field-effect transistor are respectively arranged inside the high-voltage ring. The high-voltage ring also includes: a high-voltage module, a linear voltage regulator module, a clock module, a feedback module, a PWM module, a voltage conversion module, and a signal transmission module. Among them,

[0006] The high-voltage module is connected to the electric vehicle power supply and the bootstrap high-voltage field-effect transistor, and is used to receive the power supply voltage and convert the power supply voltage into the required voltages of the linear voltage regulator module and the signal transmission module;

[0007] The linear voltage regulator module is connected to the high-voltage module, and is used to receive the required voltage transmitted by the high-voltage module, perform voltage regulation processing on the required voltage, and output a reference voltage;

[0008] The clock module is connected to the linear voltage regulator module and the PWM module, and is used to receive the reference voltage, and periodically generate and output a maximum duty cycle signal and a diagnostic signal based on the electrical signal of the reference voltage;

[0009] The feedback module is connected to the linear voltage regulator module and is configured to receive the reference voltage and the peripheral power supply voltage, compare the reference voltage with the peripheral power supply voltage, and determine whether the peripheral power supply voltage is greater than the reference voltage. If it is greater, an L voltage signal with a gradually decreasing voltage within a first preset voltage range is output; otherwise, an L voltage signal with a gradually increasing voltage within a second preset voltage range is output.

[0010] The PWM module is connected to the feedback module and the clock module and is configured to receive the diagnostic signal, the maximum duty cycle signal, and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal, and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor, so that the high-voltage module receives the comparison signal and adjusts the required voltage for the signal transmission module according to the comparison signal, and send the pulse signal to the gate of the high-voltage field-effect transistor.

[0011] The voltage conversion module is connected to the high-voltage field-effect transistor. The high-voltage field-effect transistor converts the low-end signal of the pulse signal into a high-end signal. The voltage conversion module receives the converted pulse signal and outputs a high-end high-voltage signal.

[0012] The signal transmission module is connected to the voltage conversion module and is configured to receive the high-end high-voltage signal and transmit the high-end high-voltage signal to the electrical equipment of the electric vehicle.

[0013] By adopting the above technical solution, during the operation of the electric vehicle, to ensure the reliability of battery application and enable the battery to meet the upper limit requirement of voltage in different driving environments of the electric vehicle, the present application uses a power driver chip to change the voltage output from the battery to the electric vehicle. Specifically, the HVCMOS driving process is adopted to generate a high-voltage loop, and then a high-voltage field-effect transistor and a bootstrap high-voltage field-effect transistor are respectively arranged in the high-voltage loop. At the same time, the high-voltage loop also includes a high-voltage module, a linear voltage regulation module, a clock module, a feedback module, a PWM module, a voltage conversion module, and a signal transmission module. Among them, the high-voltage module is connected to the electric vehicle power supply and the bootstrap high-voltage field-effect transistor, and is used to receive the power supply voltage and convert the power supply voltage into the required voltages of the linear voltage regulation module and the signal transmission module. Then, the linear voltage regulation module is connected to the high-voltage module and is used to receive the required voltage transmitted by the high-voltage module, perform voltage regulation processing on the required voltage, and output a reference voltage. Then, the clock module is connected to the linear voltage regulation module and the PWM module, and is used to receive the reference voltage, and periodically generate and output a maximum duty cycle signal and a diagnostic signal based on the electrical signal of the reference voltage. Then, the feedback module is connected to the linear voltage regulation module and is used to receive the reference voltage and the power supply peripheral voltage, compare the reference voltage with the power supply peripheral voltage, and judge whether the power supply peripheral voltage is greater than the reference voltage. If it is greater, an L voltage signal with a gradually decreasing voltage within the first preset voltage range value is output; otherwise, an L voltage signal with a gradually increasing voltage within the second preset voltage range value is output. Then, the PWM module is connected to the feedback module and the clock module, and is used to receive the diagnostic signal, the maximum duty cycle signal, and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal, and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor, so that the high-voltage module receives the comparison signal and adjusts the required voltage for the signal transmission module according to the comparison signal, send the pulse signal to the gate of the high-voltage field-effect transistor. Then, the voltage conversion module is connected to the high-voltage field-effect transistor, and the high-voltage field-effect transistor converts the low-end signal of the pulse signal into a high-end signal. The voltage conversion module receives the converted pulse signal and outputs a high-end high-voltage signal. Finally, the signal transmission module is connected to the voltage conversion module and is used to receive the high-end high-voltage signal and transmit the high-end high-voltage signal to the electrical equipment of the electric vehicle.

[0014] Optionally, the high-voltage module includes a first field-effect transistor, a second field-effect transistor, and a voltage withstand diode. The drains of the first field-effect transistor and the second field-effect transistor are connected to the electric vehicle power supply to receive the electric vehicle power supply voltage. The source of the first field-effect transistor is connected to the linear voltage regulator module to provide the required voltage for the linear voltage regulator module. The gate of the first field-effect transistor is grounded. The gate of the second field-effect transistor is grounded. The source of the second field-effect transistor is connected to the positive pole of the voltage withstand diode. The negative pole of the voltage withstand diode is connected to the drain of the boost high-voltage field-effect transistor.

[0015] Optionally, the linear voltage regulator module includes a low-dropout linear regulator. The input end of the low-dropout linear regulator is connected to the source of the first field-effect transistor to receive the required voltage output by the high-voltage module, and perform voltage regulation on the required voltage to output a reference voltage.

[0016] Optionally, the clock module includes an internal oscillator and a timing system. The internal oscillator receives the reference voltage and generates an oscillation signal based on the change of the reference voltage. After receiving the reference voltage, the timing system generates a clock signal in real time according to the reference voltage and the oscillation signal, and generates and outputs a maximum duty cycle signal and a diagnostic signal based on the clock signal and the reference voltage.

[0017] Optionally, the feedback module includes a voltage sampling circuit, an error amplifier, a comparator, and a filter. The voltage sampling circuit is used to collect the peripheral voltage of the power supply. The error amplifier is connected to the output end of the voltage sampling circuit to receive the peripheral voltage of the power supply, and amplify and correct the collected peripheral voltage of the power supply to output a sampled voltage. The input end of the filter is connected to the output end of the error amplifier to receive the sampled voltage, and remove the noise and ripple in the sampled voltage to output a comparison voltage. The input end of the comparator is connected to the output end of the filter and the output end of the low-dropout linear regulator to receive the sampled voltage and the reference voltage, and compare the reference voltage with the peripheral voltage of the power supply to determine whether the peripheral voltage of the power supply is greater than the reference voltage. If it is greater, it outputs an L voltage signal with a gradually decreasing voltage within a first preset voltage range value. Otherwise, it outputs an L voltage signal with a gradually increasing voltage within a second preset voltage range value.

[0018] Optionally, the PWM module includes a PWM chip, which is connected to the high-voltage module, the feedback module, and the clock module, and is configured to receive the diagnostic signal, the maximum duty cycle signal, and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal, and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor, so that the high-voltage module receives the comparison signal and adjusts the required voltage for the signal transmission module according to the comparison signal, and send the pulse signal to the gate of the high-voltage field-effect transistor.

[0019] Optionally, the voltage conversion module includes a first resistor R1, a second resistor R2, a first zener diode D1, a second zener diode D2, a third zener diode D3, and a fourth zener diode D4. The positive terminals of the third zener diode D3 and the fourth zener diode D4 are connected to the drain of the high-voltage field-effect transistor, the drain of the high-voltage field-effect transistor is grounded, the gate of the high-voltage field-effect transistor is connected to the output terminal of the PWM module, and is configured to convert the low-end signal of the pulse signal into a high-end signal. The source of the high-voltage field-effect transistor is grounded. The positive terminal of the first zener diode D1 is connected to the negative terminal of the third zener diode D3, the negative terminal of the first zener diode D1 is connected to the high-end voltage, the positive terminal of the second zener diode D2 is connected to the negative terminal of the fourth zener diode D4, the negative terminal of the second zener diode D2 is connected to the high-end voltage. The first signal output port of the voltage conversion module is arranged at the node between the third zener diode D3 and the high-voltage field-effect transistor, the second signal output port of the voltage conversion module is arranged at the node between the fourth zener diode D4 and the fifth field-effect diode. Both ends of the first resistor R1 are respectively connected to the high-end voltage and the node between the first signal output port and the third zener diode D3, and both ends of the second resistor R2 are respectively connected to the high-end voltage and the node between the second signal output port and the fourth zener diode D4.

[0020] Optionally, the specifications of the first field-effect transistor and the second field-effect transistor are JEFT17_120V&Vp=17vBVDss=250v, where JEFT17 is the model name of the first field-effect transistor, 120V is the rated voltage of the first field-effect transistor, Vp=17v indicates that the operating voltage of the first field-effect transistor is 17V, and BVDss=250v is the drain-source breakdown voltage of the first field-effect transistor.

[0021] Optionally, it further includes a sampling and comparison module. The detection end of the sampling and comparison module is connected to the peripheral power tube of the signal transmitter, and is used to sample and compare the operating current of the peripheral power tube, and adjust the drive signal of the peripheral power tube when the operating current is greater than a preset current threshold.

[0022] In summary, the present application includes at least one of the following beneficial technical effects:

[0023] During the operation of the electric vehicle, to ensure the reliability of battery application and enable the battery to meet the upper limit requirements of voltage in different driving environments of the electric vehicle, the present application uses a power driver chip to change the voltage output from the battery to the electric vehicle. Specifically, an HVCMOS driving process is used to generate a high-voltage loop, and then a high-voltage field-effect transistor and a bootstrap high-voltage field-effect transistor are respectively arranged in the high-voltage loop. At the same time, the high-voltage loop also includes a high-voltage module, a linear voltage regulator module, a clock module, a feedback module, a PWM module, a voltage conversion module, and a signal transmission module. Among them, the high-voltage module is connected to the electric vehicle power supply and the bootstrap high-voltage field-effect transistor, and is used to receive the power supply voltage and convert the power supply voltage into the required voltages for the linear voltage regulator module and the signal transmission module. Then, the linear voltage regulator module is connected to the high-voltage module, and is used to receive the required voltage transmitted by the high-voltage module, perform voltage regulation on the required voltage, and output a reference voltage. Then, the clock module is connected to the linear voltage regulator module and the PWM module, and is used to receive the reference voltage and periodically generate and output a maximum duty cycle signal and a diagnostic signal based on the electrical signal of the reference voltage. Then, the feedback module is connected to the linear voltage regulator module, and is used to receive the reference voltage and the peripheral power supply voltage, compare the reference voltage with the peripheral power supply voltage, and determine whether the peripheral power supply voltage is greater than the reference voltage. If it is greater, an L voltage signal with a gradually decreasing voltage within the first preset voltage range value is output; otherwise, an L voltage signal with a gradually increasing voltage within the second preset voltage range value is output. Then, the PWM module is connected to the feedback module and the clock module, and is used to receive the diagnostic signal, the maximum duty cycle signal, and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal, and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor, so that the high-voltage module receives the comparison signal and adjusts the required voltage for the signal transmission module according to the comparison signal, send the pulse signal to the gate of the high-voltage field-effect transistor. Then, the voltage conversion module is connected to the high-voltage field-effect transistor, and the high-voltage field-effect transistor converts the low-end signal of the pulse signal into a high-end signal. The voltage conversion module receives the converted pulse signal and outputs a high-end high-voltage signal. Finally, the signal transmission module is connected to the voltage conversion module, and is used to receive the high-end high-voltage signal and transmit the high-end high-voltage signal to the electrical equipment of the electric vehicle. Description of the Drawings

[0024] Figure 1It is a schematic diagram of the overall module structure of a power drive chip according to an embodiment of the present application;

[0025] Figure 2 It is a schematic diagram of the connection of the high-voltage module of a power drive chip according to an embodiment of the present application;

[0026] Figure 3 It is a schematic diagram of the connection of the voltage conversion module of a power drive chip according to an embodiment of the present application;

[0027] Description of reference numerals: 1. High-voltage ring; 2. High-voltage field-effect transistor; 3. Bootstrap high-voltage field-effect transistor; 4. High-voltage module; 5. Linear voltage regulator module; 6. Clock module; 7. Feedback module; 8. PWM module; 9. Voltage conversion module; 10. Signal transmission module; 11. Sampling comparison module; 12. First field-effect transistor; 13. Second field-effect transistor. Detailed implementation manners

[0028] In order to make the objectives, technical solutions and advantages of the present application clearer, the following Figures 1-3 are further described in detail with reference to the accompanying

[0029] drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application. Figure 1, including: a high-voltage ring 1 generated by an HVCMOS driving process, a high-voltage field-effect transistor 2 and a bootstrap high-voltage field-effect transistor 3 are respectively arranged inside the high-voltage ring 1, and the high-voltage ring 1 further includes: a high-voltage module 4, a linear voltage regulation module 5, a clock module 6, a feedback module 7, a PWM module 8, a voltage conversion module 9 and a signal transmission module 10. Among them, the high-voltage module 4 is connected to the electric vehicle power supply and the bootstrap high-voltage field-effect transistor 3, and is used to receive the power supply voltage and convert the power supply voltage into the required voltages of the linear voltage regulation module 5 and the signal transmission module 10. The linear voltage regulation module 5 is connected to the high-voltage module 4, and is used to receive the required voltage transmitted by the high-voltage module 4, perform voltage regulation processing on the required voltage, and output a reference voltage. The clock module 6 is connected to the linear voltage regulation module 5 and the PWM module 8, and is used to receive the reference voltage, and periodically generate and output a maximum duty cycle signal and a diagnostic signal based on the electrical signal of the reference voltage. The feedback module 7 is connected to the linear voltage regulation module 5, and is used to receive the reference voltage and the peripheral voltage of the power supply, compare the reference voltage with the peripheral voltage of the power supply, and judge whether the peripheral voltage of the power supply is greater than the reference voltage. If it is greater, an L voltage signal with a gradually decreasing voltage within the first preset voltage range value is output; otherwise, an L voltage signal with a gradually increasing voltage within the second preset voltage range value is output. The PWM module 8 is connected to the feedback module 7 and the clock module 6, and is used to receive the diagnostic signal, the maximum duty cycle signal and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor 3, so that the high-voltage module 4 receives the comparison signal and adjusts the required voltage for the signal transmission module 10 according to the comparison signal, and send the pulse signal to the gate of the high-voltage field-effect transistor 2. The voltage conversion module 9 is connected to the high-voltage field-effect transistor 2, and the high-voltage field-effect transistor 2 converts the low-end signal of the pulse signal into a high-end signal. The voltage conversion module 9 receives the converted pulse signal and outputs a high-end high-voltage signal. The signal transmission module 10 is connected to the voltage conversion module 9, and is used to receive the high-end high-voltage signal and transmit the high-end high-voltage signal to the electrical equipment of the electric vehicle.

[0030] For the embodiments of the present application, the method for preparing the high-voltage ring 1 by the HVCMOS process includes but is not limited to the following one:

[0031] 1. Wafer preparation: First, a wafer of appropriate size needs to be prepared. The wafer material is usually silicon.

[0032] 2. Oxidation: A layer of silicon dioxide is formed on the wafer surface, which is usually achieved through a thermal oxidation process. The silicon dioxide layer will serve as an insulating layer in subsequent processes.

[0033] 3. Doping: Next, through methods such as diffusion or ion implantation, the required impurities are introduced into the wafer to form N-type and P-type regions. These regions will constitute the various functional units in the power driver chip, such as transistors, resistors, and capacitors, etc.

[0034] 4. Gate fabrication: Gates are fabricated on the doped wafer. The gate is a crucial part of the transistor and is used to control the flow of current.

[0035] 5. Metallization: Metal layers are formed at the gates and other places that need to be connected to connect the various components.

[0036] 6. Dicing and packaging: Finally, the wafer is cut into individual chips and packaged to protect the chips and connect them to the external circuit to form the high-voltage ring 1.

[0037] During the operation of an electric vehicle, to ensure the reliability of battery application and enable the battery to meet the upper limit voltage requirements of the electric vehicle in different driving environments, this application uses a power driver chip to change the voltage output from the battery to the electric vehicle. Specifically, the HVCMOS driving process is adopted to generate a high-voltage ring 1, and then a high-voltage field-effect transistor 2 and a bootstrap high-voltage field-effect transistor 3 are respectively arranged in the high-voltage ring 1. At the same time, the high-voltage ring 1 also includes a high-voltage module 4, a linear voltage regulator module 5, a clock module 6, a feedback module 7, a PWM module 8, a voltage conversion module 9, and a signal transmission module 10. Among them, the high-voltage module 4 is connected to the electric vehicle power supply and the bootstrap high-voltage field-effect transistor 3, and is used to receive the power supply voltage and convert the power supply voltage into the required voltages for the linear voltage regulator module 5 and the signal transmission module 10. Then, the linear voltage regulator module 5 is connected to the high-voltage module 4, and is used to receive the required voltage transmitted by the high-voltage module 4, perform voltage regulation on the required voltage, and output a reference voltage. Then, the clock module 6 is connected to the linear voltage regulator module 5 and the PWM module 8, and is used to receive the reference voltage, and periodically generate and output a maximum duty cycle signal and a diagnostic signal based on the electrical signal of the reference voltage. Then, the feedback module 7 is connected to the linear voltage regulator module 5, and is used to receive the reference voltage and the peripheral voltage of the power supply, compare the reference voltage with the peripheral voltage of the power supply, and judge whether the peripheral voltage of the power supply is greater than the reference voltage. If it is greater, an L voltage signal with a gradually decreasing voltage within the first preset voltage range value is output; otherwise, an L voltage signal with a gradually increasing voltage within the second preset voltage range value is output. Then, the PWM module 8 is connected to the feedback module 7 and the clock module 6, and is used to receive the diagnostic signal, the maximum duty cycle signal, and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal, and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor 3, so that the high-voltage module 4 receives the comparison signal and adjusts the required voltage for the signal transmission module 10 according to the comparison signal, send the pulse signal to the gate of the high-voltage field-effect transistor 2. Then, the voltage conversion module 9 is connected to the high-voltage field-effect transistor 2, and the high-voltage field-effect transistor 2 converts the low-end signal of the pulse signal into a high-end signal. The voltage conversion module 9 receives the converted pulse signal and outputs a high-end high-voltage signal. Finally, the signal transmission module 10 is connected to the voltage conversion module 9, and is used to receive the high-end high-voltage signal and transmit the high-end high-voltage signal to the electrical equipment of the electric vehicle.

[0038] ,In the embodiment of the present application, when the PWM module 8 processes the maximum duty cycle signal, the diagnostic signal, and the L voltage signal to generate and output a comparison signal and a pulse signal, the specific signal processing process is as follows: the maximum duty cycle signal is converted into a threshold value, and then the L voltage signal is compared with the threshold value. When the voltage value of the L voltage signal is higher than the set threshold value, the comparison signal output by the PWM module 8 is at a low level. At this time, after the comparison signal is transmitted to the high-voltage module 4, the high-voltage module 4 stops supplying power to the signal transmission module 10. This indicates that there is no need to adjust the output of the battery voltage at present. When the voltage value of the L voltage signal is lower than or equal to the set threshold value, the comparison signal output by the PWM module 8 is at a high level. After the comparison signal is transmitted to the high-voltage module 4, the high-voltage module 4 starts to supply power to the signal transmission module 10. This indicates that the current battery voltage cannot meet the voltage upper limit requirement of the electric vehicle in the current environment, and it is necessary to amplify the current battery voltage to meet the power consumption requirement of the electric vehicle.

[0039] Meanwhile, according to the diagnostic signal, it can be determined whether there is an abnormality in the current power supply drive chip itself. When there is an abnormality, the potential of the comparison signal is adjusted so that the comparison signal is always in a low potential state, and an alarm signal is generated to control the alarm device to perform an alarm response.

[0040] In the embodiment of the present application, a pulse signal is generated according to the comparison signal. The frequency, width, and / or duty cycle of the pulse signal can be adjusted as needed. For example, if the L voltage is higher than the threshold value, the pulse signal has a low duty cycle; if the L voltage is lower than the threshold value, the pulse signal may have a high duty cycle.

[0041] In the embodiment of the present application, referring to Figure 1 and 2 , the high-voltage module 4 includes a first field-effect transistor 12, a second field-effect transistor 13, and a voltage withstand diode. The drains of the first field-effect transistor 12 and the second field-effect transistor 13 are connected to the electric vehicle power supply for receiving the electric vehicle power supply voltage. The source of the first field-effect transistor 12 is connected to the linear voltage regulator module 5 for providing the required voltage for the linear voltage regulator module 5. The gate of the first field-effect transistor 12 is grounded, the gate of the second field-effect transistor 13 is grounded, the source of the second field-effect transistor 13 is connected to the positive electrode of the voltage withstand diode, and the negative electrode of the voltage withstand diode is connected to the drain of the bootstrap high-voltage field-effect transistor 3.

[0042] In the embodiment of the present application, referring to Figure 1 , the linear voltage regulator module 5 includes a low-dropout linear regulator. The input end of the low-dropout linear regulator is connected to the source of the first field-effect transistor 12 for receiving the required voltage output by the high-voltage module 4 and performing voltage regulation processing on the required voltage to output a reference voltage.

[0043] In the embodiment of the present application, with reference to Figure 1 , the clock module 6 includes an internal oscillator and a timing system. The internal oscillator receives a reference voltage and generates an oscillation signal based on the change of the reference voltage. After receiving the reference voltage, the timing system generates a clock signal in real time according to the reference voltage and the oscillation signal, and generates and outputs a maximum duty cycle signal and a diagnostic signal based on the clock signal and the reference voltage.

[0044] In the embodiment of the present application, with reference to Figure 1 , the feedback module 7 includes a voltage sampling circuit, an error amplifier, a comparator and a filter. The voltage sampling circuit is used to collect the voltage around the power supply. The error amplifier is connected to the output end of the voltage sampling circuit, and is used to receive the voltage around the power supply, amplify and correct the collected voltage around the power supply, and output a sampled voltage. The input end of the filter is connected to the output end of the error amplifier, and is used to receive the sampled voltage, remove the noise and ripple in the sampled voltage, and output a comparison voltage. The input end of the comparator is connected to the output end of the filter and the output end of the low dropout linear regulator, and is used to receive the sampled voltage and the reference voltage, compare the reference voltage with the voltage around the power supply, and judge whether the voltage around the power supply is greater than the reference voltage. If it is greater, an L voltage signal with a gradually decreasing voltage within the first preset voltage range value is output. Otherwise, an L voltage signal with a gradually increasing voltage within the second preset voltage range value is output.

[0045] In the embodiment of the present application, with reference to Figure 1 , the PWM module 8 includes a PWM chip. The PWM chip is connected to the high-voltage module 4, the feedback module 7 and the clock module 6, and is used to receive the diagnostic signal, the maximum duty cycle signal and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal and the L voltage signal, send the comparison signal to the gate of the bootstrap high-voltage field-effect transistor 3, so that the high-voltage module 4 receives the comparison signal and adjusts the required voltage for the signal transmission module 10 according to the comparison signal, and send the pulse signal to the gate of the high-voltage field-effect transistor 2.

[0046] In the embodiment of the present application, with reference to Figure 3, the voltage conversion module 9 includes a first resistor R1, a second resistor R2, a first zener diode D1, a second zener diode D2, a third zener diode D3, and a fourth zener diode D4. The positive terminals of the third zener diode D3 and the fourth zener diode D4 are connected to the drain of the high-voltage field-effect transistor 2. The drain of the high-voltage field-effect transistor 2 is grounded. The gate of the high-voltage field-effect transistor 2 is connected to the output terminal of the PWM module 8, which is used to convert the low-end signal of the pulse signal into a high-end signal. The source of the high-voltage field-effect transistor 2 is grounded. The positive terminal of the first zener diode D1 is connected to the negative terminal of the third zener diode D3, and the negative terminal of the first zener diode D1 is connected to the high-end voltage. The positive terminal of the second zener diode D2 is connected to the negative terminal of the fourth zener diode D4, and the negative terminal of the second zener diode D2 is connected to the high-end voltage. The first signal output port of the voltage conversion module 9 is set at the node between the third zener diode D3 and the high-voltage field-effect transistor 2. The second signal output port of the voltage conversion module 9 is set at the node between the fourth zener diode D4 and the fifth field-effect diode. The two ends of the first resistor R1 are respectively connected to the high-end voltage and the node between the first signal output port and the third zener diode D3. The two ends of the second resistor R2 are respectively connected to the high-end voltage and the node between the second signal output port and the fourth zener diode D4.

[0047] In the embodiment of the present application, referring to Figure 1 , the signal transmission module 10 includes a signal transmitter. The power supply terminal of the signal transmitter is connected to the source of the boost high-voltage field-effect transistor 3. The receiving terminal of the signal transmitter is connected to the first signal output port and the second signal output port. The signal transmitter transmits the high-end high-voltage signals output from the first signal output port and the second signal output port to the electrical equipment of the electric vehicle. In addition, the power supply drive chip further includes a sampling and comparison module 11. The sampling and comparison module 11 includes a comparator. The detection terminal of the comparator is connected to the peripheral power transistor of the signal transmitter, which is used to sample and compare the working current of the peripheral power transistor, and when the working current is greater than the preset current threshold, adjust the drive signal of the peripheral power transistor to reduce the drive signal of the peripheral power transistor and lower the working current.

[0048] In the embodiment of the present application, referring to Figure 2 , the specifications of the first field-effect transistor 12 and the second field-effect transistor 13 are JEFT17_120V&Vp = 17v BVDss = 250v, where JEFT17 is the model name of the first field-effect transistor 12, 120V is the rated voltage of the first field-effect transistor 12, Vp = 17v is used to indicate that the working voltage of the first field-effect transistor 12 is 17V, and BVDss = 250v is used for the drain-source breakdown voltage of the first field-effect transistor 12 to be 250V.

[0049] For the embodiments of the present application, the first field effect transistor 12 and the second field effect transistor 13 with the specifications of JEFT17_120V&Vp=17vBVDss=250v are used to replace the power supply power transistor of the system, and the 30V withstand voltage diode and the parasitic diode controlled by the PWM chip are simulated to be a 120V high-voltage Schottky, which improves the withstand voltage and reliability of the power supply driver chip.

[0050] The above are all preferred embodiments of the present application. Without limiting the protection scope of the present application accordingly, any feature disclosed in this specification (including the abstract and drawings), unless specifically described, can be replaced by other equivalent or similar-purpose alternative features. That is, unless specifically described, each feature is only an example in a series of equivalent or similar features.

Claims

1. A power driver chip, characterized in that: include: A high voltage loop (1) generated by an HVCMOS driving process, wherein the high voltage loop (1) comprises: a high voltage module (4), a linear voltage regulation module (5), a clock module (6), a feedback module (7), a PWM module (8), a voltage conversion module (9) and a signal transmission module (10), wherein: The high-voltage module (4) is connected to the electric vehicle power supply, and is used to receive the power supply voltage, and convert the power supply voltage into the required voltage of the linear voltage regulator module (5), and convert the power supply voltage into the required voltage of the signal transmission module (10) through the bootstrap high-voltage field effect transistor (3) inside the high-voltage module (4); The linear voltage stabilization module (5) is connected to the high-voltage module (4), and is used to receive the required voltage transmitted by the high-voltage module (4), perform voltage stabilization processing on the required voltage, and output a reference voltage; The clock module (6) is connected to the linear voltage regulator module (5) and the PWM module (8), and is used to receive the reference voltage, and periodically generate and output a maximum duty cycle signal and a diagnostic signal based on an electrical signal of the reference voltage; The feedback module (7) is connected to the linear voltage stabilization module (5), and is used to receive the reference voltage and the power supply peripheral voltage, and compare the reference voltage with the power supply peripheral voltage to determine whether the power supply peripheral voltage is greater than the reference voltage; if so, an L voltage signal with a gradually decreasing voltage within a first preset voltage range is output; otherwise, an L voltage signal with a gradually increasing voltage within a second preset voltage range is output; The PWM module (8) is connected to the feedback module (7) and the clock module (6), and is used to receive the diagnostic signal, the maximum duty cycle signal and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal and the L voltage signal, and send the comparison signal to the gate of the bootstrap high-voltage field effect transistor (3), so that the high-voltage module (4) receives the comparison signal, adjusts the required voltage for the signal transmission module (10) according to the comparison signal, and sends the pulse signal to the gate of the high-voltage field effect transistor (2); The voltage conversion module (9) comprises the high-voltage field effect transistor (2), and when the pulse signal is converted from a low level to a high level, the voltage conversion module (9) receives the converted pulse signal and outputs a high-end high-voltage signal; The signal transmission module (10) is connected to the voltage conversion module (9) and is used to receive the high-end high-voltage signal and transmit the high-end high-voltage signal to the electrical equipment of the electric vehicle.

2. A power driver chip according to claim 1, characterized in that: The high-voltage module (4) further comprises a first field effect transistor (12), a second field effect transistor (13) and a withstand voltage diode. The drains of the first field effect transistor (12) and the second field effect transistor (13) are connected to an electric vehicle power supply for receiving the electric vehicle power supply voltage. The source of the first field effect transistor (12) is connected to a linear voltage regulator module (5) for providing a required voltage to the linear voltage regulator module (5). The gate of the first field effect transistor (12) is grounded. The gate of the second field effect transistor (13) is grounded. The source of the second field effect transistor (13) is connected to the positive electrode of the withstand voltage diode. The negative electrode of the withstand voltage diode is connected to the drain of the bootstrap high-voltage field effect transistor (3). The source of the bootstrap high-voltage field effect transistor (3) is connected to a signal transmission module (10).

3. A power driver chip according to claim 2, characterized in that: The linear voltage stabilization module (5) comprises a low voltage difference linear voltage regulator, the input end of the low voltage difference linear voltage regulator is connected to the source of the first field effect transistor (12), and is used to receive the required voltage output by the high voltage module (4), perform voltage stabilization processing on the required voltage, and output a reference voltage.

4. A power driver chip according to claim 3, characterized in that: The clock module (6) comprises an internal oscillator and a timing system. The internal oscillator receives the reference voltage and generates an oscillation signal based on the change of the reference voltage. After receiving the reference voltage, the timing system generates a clock signal in real time according to the reference voltage and the oscillation signal, and generates and outputs a maximum duty cycle signal and a diagnostic signal based on the clock signal and the reference voltage.

5. A power driver chip according to claim 4, characterized in that: The feedback module (7) comprises a voltage sampling circuit, an error amplifier, a comparator and a filter. The voltage sampling circuit is used to collect the peripheral voltage of the power supply. The error amplifier is connected to the output end of the voltage sampling circuit and is used to receive the peripheral voltage of the power supply, amplify and correct the collected peripheral voltage of the power supply, and output the sampling voltage. The input end of the filter is connected to the output end of the error amplifier and is used to receive the sampling voltage, remove noise and ripple in the sampling voltage, and output a comparison voltage. The input end of the comparator is connected to the output end of the filter and the output end of the low voltage difference linear regulator and is used to receive the sampling voltage and the reference voltage, and compare the reference voltage with the peripheral voltage of the power supply to determine whether the peripheral voltage of the power supply is greater than the reference voltage. If greater than, an L voltage signal with a voltage gradually decreasing within a first preset voltage range is output; otherwise, an L voltage signal with a voltage gradually increasing within a second preset voltage range is output.

6. A power driver chip according to claim 5, characterized in that: The PWM module (8) comprises a PWM chip, which is connected to the high-voltage module (4), the feedback module (7) and the clock module (6), and is used to receive the diagnostic signal, the maximum duty cycle signal and the L voltage signal, generate and output a comparison signal and a pulse signal according to the maximum duty cycle signal, the diagnostic signal and the L voltage signal, and send the comparison signal to the gate of the bootstrap high-voltage field effect transistor (3), so that the high-voltage module (4) receives the comparison signal, adjusts the required voltage for the signal transmission module (10) according to the comparison signal, and sends the pulse signal to the gate of the high-voltage field effect transistor (2).

7. A power driver chip according to claim 6, characterized in that: The voltage conversion module (9) comprises a first resistor R1, a second resistor R2, a first voltage zener diode D1, a second voltage zener diode D2, a third voltage zener diode D3 and a fourth voltage zener diode D4, the positive terminal of the third voltage zener diode D3 and the positive terminal of the fourth voltage zener diode D4 are connected to the drain of the high-voltage field effect transistor (2), the source of the high-voltage field effect transistor (2) is grounded, the gate of the high-voltage field effect transistor (2) is connected to the output end of the PWM module (8), and is used for converting the low-end signal of the pulse signal into a high-end signal, the source of the high-voltage field effect transistor (2) is grounded, the positive terminal of the first voltage zener diode D1 is connected to the negative terminal of the third voltage zener diode D3, and the negative terminal of the first voltage zener diode D1 is connected to the output end of the PWM module (8). The first resistor R1 is connected to the high-end voltage and the node between the first signal output port and the third voltage zener diode D3, and the second resistor R2 is connected to the high-end voltage and the node between the second signal output port and the fourth voltage zener diode D4.

8. A power driver chip according to claim 7, characterized in that: The signal transmission module (10) comprises a signal transmitter, wherein a power supply end of the signal transmitter is connected to a source of a bootstrap high-voltage field effect transistor (3), and a receiving end of the signal transmitter is connected to the first signal output port and the second signal output port. The signal transmitter transmits high-end high-voltage signals outputted from the first signal output port and the second signal output port to electrical equipment of the electric vehicle.

9. A power driver chip according to claim 8, characterized in that: The specifications of the first field effect transistor (12) and the second field effect transistor (13) are JEFT17_120V&Vp=17v, BVDss=250v, wherein JEFT17 is the model name of the first field effect transistor (12) and the second field effect transistor (13), 120V is the rated voltage of the first field effect transistor (12) and the second field effect transistor (13), Vp=17v is used to indicate that the operating voltage of the first field effect transistor (12) and the second field effect transistor (13) is 17V, and BVDss=250v is used to indicate that the drain-source breakdown voltage of the first field effect transistor (12) and the second field effect transistor (13) is 250V.

10. A power driver chip according to claim 8, characterized in that: It also includes a sampling comparison module (11), wherein: The detection end of the sampling and comparison module (11) is connected to the peripheral power tube of the signal transmitter, and is used to sample and compare the working current of the peripheral power tube, and adjust the driving signal of the peripheral power tube when the working current is greater than a preset current threshold.

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