A multi-chamber silicon carbide wafer production apparatus
By designing a multi-chamber silicon carbide wafer production device and combining air cooling and water cooling technologies, the problems of long cooling time and dangerous operation of silicon carbide crystals were solved, achieving rapid cooling and safe and efficient production.
Patent Information
- Application Number
- CN202410863991.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-30
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2044-06-30
AI Technical Summary
The current silicon carbide crystal production process involves long cooling times and dangerous operations, and cannot be cooled quickly at high temperatures, affecting production efficiency and safety.
Design a multi-chamber silicon carbide wafer production device, including an insulation chamber, an air-cooled chamber, and a water-cooled chamber. The crystal is rapidly cooled by a threaded rod and a drive mechanism. Cooling is achieved by combining air cooling and water cooling to avoid heat leakage during high-temperature operation.
Rapid cooling of silicon carbide crystals was achieved, improving production efficiency and safety, preventing heat leakage during high-temperature operations, and simplifying the operation process.
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Figure CN118600539B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of wafer production, and particularly relates to a multi-chamber silicon carbide wafer production device. BACKGROUND
[0002] Silicon carbide crystal is a preferred material for high-frequency, high-power, high-temperature-resistant and radiation-resistant semiconductor devices, and can be used in extreme environments such as monitoring of ground nuclear reactor systems, oil exploration, environmental monitoring, aviation, aerospace, radar, communication systems, high-power electronic converters and automobile motors.
[0003] There are about 1950-degree peak temperature high-temperature annealing equipment for silicon carbide devices, about 1380-degree peak temperature high-temperature oxidation furnace for silicon carbide oxidation in the market. Since the temperature required for preparing silicon carbide crystal generally needs to reach more than 2000 degrees, the highest temperature of the equipment for preparing silicon carbide crystal can generally reach more than 2500 degrees.
[0004] Since the temperature is high during the production of silicon carbide, long-time cooling is required after the formation of silicon carbide crystal. At present, the cooling methods for silicon carbide crystal include natural cooling, air cooling and water cooling, but the high-temperature silicon carbide crystal needs to be taken off from the seed crystal holder, which leads to long cooling time and dangerous operation during the production of silicon carbide crystal. SUMMARY
[0005] The application aims to provide a multi-chamber silicon carbide wafer production device, which has a simple structure, can quickly cool the produced silicon carbide crystal when the silicon carbide crystal is prepared by sublimation, can be disassembled between chambers, can effectively prevent heat overflow during high-temperature operation, does not need to disassemble the crystal during cooling, increases work efficiency and safety, and is suitable for promotion.
[0006] The application provides the following technical scheme: a multi-chamber silicon carbide wafer production device, comprising a production cylinder, a heat preservation chamber is arranged at the lower part of the production cylinder, a wind cooling chamber and a water cooling chamber are sequentially arranged above the heat preservation chamber in the production cylinder, an upper cover is detachably arranged at the top of the production cylinder, through holes are arranged on the center part of the upper cover and the bottom wall of the wind cooling chamber and the water cooling chamber and are located on the same straight line;
[0007] The production cylinder is fixed on a bottom plate, outer frames extending above the through holes are fixed on both sides of the bottom plate, threaded rods are arranged on the outer frames above the through holes through a driving mechanism, the threaded rods pass through the through holes and enter the production cylinder and are fixed at the bottom and arranged with seed crystal holders;
[0008] The opposite sides of the bottom of the water cooling cavity and the air cooling cavity are fixedly provided with symmetrical telescopic cavities, support springs are arranged in the telescopic cavities, one end of the support spring is fixed on a support rod, the support rod penetrates out of the telescopic cavity, and a blocking plate is fixedly arranged on the side of the support rod away from the telescopic cavity.
[0009] Preferably, the driving mechanism comprises a motor fixed on the outer frame, a driving gear disc connected to the output end of the motor, a rotating gear disc provided on the outer frame, an inner built-in rotating ring fixed on one side of the rotating gear disc, the inner built-in rotating ring being located in the outer frame and being slidably connected to the outer frame, the teeth of the rotating gear disc and the teeth of the driving gear disc being engaged, and a threaded hole being provided at the center of the rotating gear disc, the threaded rod penetrating through the threaded hole and being threadedly connected to the threaded hole.
[0010] Preferably, longitudinal sliding rails are arranged on the two sides of the threaded rod, and a top block is fixedly arranged on the outer frame at the penetration position of the threaded rod, the top block being clamped into the sliding rails and being slidably connected to the sliding rails.
[0011] Preferably, a crucible is arranged in the heat preservation chamber, a heating groove is arranged around the outer wall of the crucible, the connecting wall of the heat preservation chamber and the air cooling cavity is a separation wall, the side of the separation wall facing the heat preservation chamber is a heat preservation layer, and the edge of the separation wall is tightly connected to the upper opening of the heat preservation chamber.
[0012] Preferably, a closing disc is fixedly arranged on the seed crystal holder above the threaded rod, the closing disc is tightly connected to the penetration opening at the separation wall, when the closing disc is connected to the penetration opening at the separation wall, the seed crystal holder is located directly above the crucible, and the diameter of the seed crystal holder is smaller than the diameter of the closing disc.
[0013] Preferably, the blocking plate is a semicircular plate, the semicircular plate of the blocking plate can cover the penetration opening, arc-shaped inclined surfaces are arranged on the upper side and the lower side of the blocking plate, the shape of the arc-shaped inclined surfaces satisfies that, when the two blocking plates are closed, the cavities on the upper side and the lower side of the blocking plate are two conical bodies with pointed ends opposite to each other, a penetration drain groove is arranged on the upper half of the blocking plate in the water cooling cavity, and the groove bottom of the drain groove is flush with the lowest part of the arc-shaped inclined surface above the drain groove.
[0014] Preferably, blowing fans are fixedly arranged on the two sides of the air cooling cavity, and the output ends of the blowing fans face the threaded rod.
[0015] Preferably, an array of atomizing nozzles is arranged on the inner wall of the water cooling cavity, the atomizing nozzles face the threaded rod, the production cylinder is coiled with a water supply pipe at the water cooling cavity, and the atomizing nozzles and the water supply pipe are connected in communication.
[0016] The beneficial effects of the present application are as follows: simple structure, the produced silicon carbide crystal can be rapidly cooled when manufacturing the silicon carbide crystal through the sublimation method, the cavities can be separated, heat overflow can be effectively prevented when high-temperature operation is performed, the crystal does not need to be taken out during cooling, work efficiency and safety are improved, and the specific effects are as follows:
[0017] (1) The threaded rod is provided, when the production cylinder works, the motor rotates to drive the rotating gear plate to rotate, when the rotating gear plate rotates, the threaded rod cannot rotate due to the threaded rod, the threaded rod is lifted under the action of the thread, when the threaded rod descends, the closed disc below the threaded rod is in contact with the separation wall of the baffle, the baffle is squeezed to the two sides under the action of the inclined wall, the closed disc and the seed crystal holder pass through the through hole and enter the upper side of the crucible, at this time, the closed disc blocks the through hole at the separation wall to form a closed space in the heat preservation chamber, so that the heating environment in the heat preservation chamber is more stable, and the motor is reversely rotated to lift the seed crystal holder after the crystal growth is completed.
[0018] (2) The baffle is provided, when the motor drives the closed disc and the seed crystal holder to ascend, the seed crystal holder moves to the air cooling cavity, the baffle is reset under the action of the supporting spring to close the through hole below the baffle, so that the temperature in the heat preservation chamber is reduced, at this time, the air cooling fan is operated to air cool the crystal, the airflow is discharged from the through hole above, after air cooling for a period of time, the motor drives the threaded rod to continue to lift, after the closed disc squeezes the baffle above, the seed crystal holder moves to the water cooling cavity, at this time, the baffle in the water cooling cavity is reset to close the through hole between the water cooling cavity and the air cooling cavity, the atomizing nozzle is used for water cooling treatment of the crystal, and the crystal is lifted out of the production cylinder after cooling is completed, so that rapid cooling is realized, and the cavities in the production cylinder are separated by the baffle, so that the work is not affected. BRIEF DESCRIPTION OF DRAWINGS
[0019] The accompanying drawings are included to provide a further understanding of the present application, and constitute a part of the specification, and are used together with the embodiments of the present application to explain the present application, and do not constitute a limitation on the present application. In the drawings:
[0020] Figure 1 is a whole schematic view of the present application;
[0021] Figure 2 is a sectional view of the present application;
[0022] Figure 3 is a sectional view of the water cooling cavity of the present application;
[0023] Figure 4 is an enlarged view of A in the present application;
[0024] Figure 5 is an enlarged view of B in the present application;
[0025] 1, production cylinder; 2, bottom plate; 3, outer frame; 4, upper cover; 5, through hole; 6, water cooling cavity; 7, air cooling cavity; 8, heat preservation chamber; 9, heating groove; 10, crucible; 11, threaded rod; 12, motor; 13, sealing disc; 14, seed crystal holder; 15, air blowing fan; 16, water supply pipe; 17, separation wall; 18, telescopic cavity; 19, blocking plate; 20, drainage groove; 21, atomizing nozzle; 22, arc slope; 23, support rod; 24, slide rail; 25, top block; 26, rotating toothed disc; 27, threaded hole; 28, built-in rotating ring; 29, driving toothed disc; 30, supporting spring. DETAILED DESCRIPTION
[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative labor fall within the scope of the present application.
[0027] In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", "top / bottom end" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.
[0028] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "provided with", "sleeved / connected", "connected" and the like should be broadly understood, for example, "connected" can be fixedly connected, or detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium; can be internal communication of two elements. For a person of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0029] The structural features of the present application will be described in detail in conjunction with the drawings of the specification.
[0030] Reference Figures 1-3The utility model provides a kind of multi-chamber silicon carbide wafer production device, including production cylinder 1, production cylinder 1 lower part is equipped with heat preservation room 8, production cylinder 1 is located in heat preservation room 8 above and is equipped with air cooling chamber 7 and water cooling chamber 6 in sequence, production cylinder 1 top is detachably equipped with upper cover 4, upper cover 4 center part and air cooling chamber 7 and water cooling chamber 6 bottom wall are equipped with the through hole 5 located on same straight line, through the through hole 5, crystal growth mechanism is passed in each chamber in production cylinder 1, air cooling is handled by air blower 15 fixedly equipped on the both sides of air cooling chamber 7, the output end of air blower 15 is towards threaded rod 11, air cooling is handled by air blower 15, the inner wall of water cooling chamber 6 is equipped with array atomizing nozzle 21, atomizing nozzle 21 is towards threaded rod 11, water supply pipe 16 is coiled in water cooling chamber 6 of production cylinder 1, atomizing nozzle 21 and water supply pipe 16 are connected, water cooling is handled by atomizing nozzle 21, after wafer production, air cooling is handled to certain temperature first, then water cooling is handled.
[0031] Referring to Figure 1 、 2 ,4, production cylinder 1 is fixed on bottom plate 2, bottom plate 2 is located on the both sides of production cylinder 1 and is fixedly equipped with outer frame 3 extending to the above of through hole 5, outer frame 3 is located at the above of through hole 5 and is equipped with threaded rod 11 by drive mechanism, threaded rod 11 passes through through hole 5 and enters into production cylinder 1 and is fixedly equipped with seed crystal holder 14 at bottom, silicon carbide crystal is generated on seed crystal holder 14, drive mechanism includes motor 12, motor 12 is fixed on outer frame 3, the output end of motor 12 is connected with driving gear 29, driving gear 29 is rotated by motor 12, outer frame 3 is equipped with rotating gear 26, rotating gear 26 is fixedly equipped with built-in rotating ring 28 on one side of outer frame 3, built-in rotating ring 28 is located in outer frame 3 and is slidably connected, so that rotating gear 26 can rotate on outer frame 3, the teeth of rotating gear 26 and driving gear 29 are engaged, rotating gear 26 is rotated when driving gear 29 rotates, threaded hole 27 is equipped in the center of rotating gear 26, threaded rod 11 passes through threaded hole 27 and is threadedly connected, longitudinal slide rail 24 is equipped on the both sides of threaded rod 11, top block 25 is fixedly equipped on threaded rod 11 penetration of outer frame 3, top block 25 is clamped in slide rail 24 and is slidably connected, threaded rod 11 cannot rotate by top block 25, when rotating gear 26 rotates, threaded rod 11 is lifted by the movement between threads.
[0032] Referring to Figure 2 、 3, two opposite sides of the bottom of the water-cooling chamber 6 and the air-cooling chamber 7 are fixedly provided with two opposite symmetrical telescopic chambers 18, the telescopic chamber 18 is provided with a supporting spring 30, one end of the supporting spring 30 is fixed on a supporting rod 23, the supporting rod 23 penetrates out of the telescopic chamber 18, a blocking plate 19 is fixedly arranged on the side of the supporting rod 23 away from the telescopic chamber 18, the supporting spring 30 pushes the supporting rod 23 to make the two blocking plates 19 close together, the bottom of the blocking plate 19 is slidably connected with the bottom wall of the water-cooling chamber 6 and the air-cooling chamber 7, the blocking plate 19 is a semicircular plate, the semicircular plate of the blocking plate 19 can cover the penetration hole 5, the penetration hole 5 is closed by the blocking plate 19, the upper and lower sides of the blocking plate 19 are provided with arc-shaped inclined surfaces 22, the blocking plate 19 is opened to the two sides by extruding the arc-shaped inclined surfaces 22, the shape of the arc-shaped inclined surface 22 satisfies that the cavities on the upper and lower sides are two cones with opposite pointed ends, the shape can make the lower part of the two blocking plates 19 surround the penetration hole 5 when the two blocking plates 19 are closed, so that the closing effect is achieved, the upper half of the blocking plate 19 in the water-cooling chamber 6 is provided with a through drainage groove 20, the groove bottom of the drainage groove 20 is flush with the lowest part of the upper arc-shaped inclined surface 22, so that the cooling liquid accumulated in the arc-shaped inclined surface 22 is discharged therefrom.
[0033] Referring to Figure 2 , the crucible 10 is arranged in the heat-insulating chamber 8, the heating groove 9 is arranged around the outer wall of the crucible 10, the connecting wall between the heat-insulating chamber 8 and the air-cooling chamber 7 is a separation wall 17, the side of the separation wall 17 facing the heat-insulating chamber 8 is a heat-insulating layer, the edge of the separation wall 17 is tightly connected with the upper opening of the heat-insulating chamber 8, so that the heat-insulating chamber 8 can be closed, and the separation wall 17 can be lifted from the heat-insulating chamber 8, the threaded rod 11 is fixedly arranged with a closing disc 13 above the seed crystal holder 14, the closing disc 13 is tightly connected with the penetration hole 5 at the separation wall 17, the closing disc 13 opens the blocking plate 19 and closes the penetration hole 5 on the heat-insulating chamber 8, when the closing disc 13 is connected with the penetration hole 5 at the separation wall 17, the seed crystal holder 14 is located directly above the crucible 10, the diameter of the seed crystal holder 14 is smaller than the diameter of the closing disc 13, so that the closing disc 13 and the seed crystal holder 14 can freely pass through the penetration hole 5.
[0034] The multi-chamber silicon carbide wafer production device has simple structure, can quickly cool the produced silicon carbide crystal when the silicon carbide crystal is produced by sublimation, can prevent heat overflow when high-temperature operation is performed, and does not need to disassemble the crystal when cooling, so that the working efficiency and safety are improved, and the device is suitable for promotion.
[0035] Specifically, refer to Figure 1 、 2,4, when the production cylinder 1 is working, the motor 12 is running, driving the rotating toothed disc 26 to rotate, when the rotating toothed disc 26 rotates, the threaded rod 11 cannot rotate, under the action of the thread, the threaded rod 11 is lifted, when the threaded rod 11 is lowered, the closed disc 13 below the threaded rod 11 contacts the separation wall 17 of the blocking plate 19, under the action of the inclined wall, the blocking plate 19 is squeezed to both sides, the closed disc 13 and the seed crystal holder 14 pass through the through hole 5 and enter the upper of the crucible 10, at this time, the closed disc 13 blocks the through hole 5 at the separation wall 17, forms a closed space in the heat preservation chamber 8, makes the heating environment in the heat preservation chamber 8 more stable, and the crystal growth is completed in the seed crystal holder 14, the output end of the motor 12 is reversed, the seed crystal holder 14 is lifted and taken out;
[0036] Referring to Figure 2 、 3 ,5, when the motor 12 drives the closed disc 13 and the seed crystal holder 14 to rise, the seed crystal holder 14 moves to the air cooling cavity 7, under the action of the supporting spring 30, the blocking plate 19 resets, closes the through hole 5 below, reduces the temperature dissipation in the heat preservation chamber 8, at this time, the blowing fan 15 is running, air cooling treatment is carried out on the crystal, the airflow is discharged from the through hole 5 above, after air cooling for a period of time, the motor 12 drives the threaded rod 11 to continue to lift, after the closed disc 13 squeezes the blocking plate 19 above, the seed crystal holder 14 moves to the water cooling cavity 6, at this time, the blocking plate 19 in the water cooling cavity 6 resets, closes the through hole 5 between the water cooling cavity 6 and the air cooling cavity 7, the atomizing nozzle 21 carries out water cooling treatment on the crystal, and after cooling, the crystal is lifted to the outside of the production cylinder 1, and rapid cooling is carried out.
[0037] The above only describes the preferred embodiments of the present application and is not used to limit the present application, although the foregoing embodiments of the present application are described in detail, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.
Claims
1. A multi-chamber silicon carbide wafer production apparatus comprising a production cylinder (1), characterized in that, The production cylinder (1) lower part is equipped with heat preservation room (8), the production cylinder (1) inside is located heat preservation room (8) above in turn is equipped with air cooling chamber (7) and water cooling chamber (6), the production cylinder (1) top detachably is equipped with upper cover (4), the upper cover (4) center part and air cooling chamber (7) and water cooling chamber (6) bottom wall are equipped with the through hole (5) located on the same straight line; Production cylinder (1) is fixed on the bottom plate (2), the bottom plate (2) is located production cylinder (1) both sides and is fixed with the outer frame (3) extending to the through hole (5) above, the outer frame (3) is located the through hole (5) above and is equipped with threaded rod (11) through drive mechanism, the threaded rod (11) passes through the through hole (5) and enters into the production cylinder (1) and is fixed with seed crystal support (14) at the bottom; The water cooling chamber (6) and air cooling chamber (7) cavity bottom's both sides are fixed with the symmetrical telescopic cavity (18), the telescopic cavity (18) is equipped with support spring (30), one end of the support spring (30) is fixed on the support rod (23), the support rod (23) penetrates out of the telescopic cavity (18), the support rod (23) is fixed with the blocking plate (19) on the side away from the telescopic cavity (18), the bottom of the blocking plate (19) is slidably connected with the bottom wall of the water cooling chamber (6) and the air cooling chamber (7) cavity.
2. A multi-chamber silicon carbide wafer production apparatus according to claim 1, wherein The drive mechanism includes motor (12), the motor (12) is fixed on the outer frame (3), the output end of the motor (12) is connected with drive gear (29), the outer frame (3) is equipped with rotary gear (26), the rotary gear (26) is fixed with built-in rotating ring (28) on one side of the outer frame (3), the built-in rotating ring (28) is located in the outer frame (3) and is slidably connected therewith, the rotary gear (26) and the drive gear (29) are engaged, the rotary gear (26) is provided with a threaded hole (27) at the center, and the threaded rod (11) penetrates the threaded hole (27) and is threadedly connected therewith.
3. A multi-chamber silicon carbide wafer production apparatus according to claim 2, wherein The threaded rod (11) is provided with a longitudinal slide rail (24) on both sides, and the outer frame (3) is provided with a top block (25) at the penetration position of the threaded rod (11), the top block (25) is clamped into the slide rail (24) and is slidably connected therewith.
4. A multi-chamber silicon carbide wafer production apparatus according to claim 1, wherein The heat preservation room (8) is provided with a crucible (10), the outer wall of the crucible (10) is provided with a heating groove (9) around, the connecting wall between the heat preservation room (8) and the air cooling chamber (7) is a separation wall (17), one side of the separation wall (17) facing the heat preservation room (8) is a heat preservation layer, and the edge of the separation wall (17) is tightly connected with the upper opening of the heat preservation room (8).
5. A multi-chamber silicon carbide wafer production apparatus according to claim 4, wherein The threaded rod (11) is fixed with a closing disc (13) above the seed crystal support (14), the closing disc (13) is tightly connected with the through hole (5) at the separation wall (17), when the closing disc (13) is connected with the through hole (5) at the separation wall (17), the seed crystal support (14) is located directly above the crucible (10), and the diameter of the seed crystal support (14) is smaller than the diameter of the closing disc (13).
6. A multi-chamber silicon carbide wafer production apparatus according to claim 1, wherein The blocking plate (19) is a semicircular plate, the semicircular plate of the blocking plate (19) can cover the through port (5), the blocking plate (19) is provided with arc-shaped inclined surfaces (22) on the upper and lower sides, the shape of the arc-shaped inclined surfaces (22) satisfies that when the two blocking plates (19) are closed, the cavities on the upper and lower sides are two cones with pointed ends opposite to each other, the upper half of the blocking plate (19) located in the water cooling cavity (6) is provided with a through drainage groove (20), and the groove bottom of the drainage groove (20) is flush with the lowest part of the upper arc-shaped inclined surface (22).
7. A multi-chamber silicon carbide wafer production apparatus according to claim 1, wherein The air cooling cavity (7) is fixedly provided with blowing fans (15) on the two sides, and the output ends of the blowing fans (15) face the threaded rod (11).
8. A multi-chamber silicon carbide wafer production apparatus according to claim 1, wherein The inner wall of the water cooling cavity (6) is provided with an array of atomizing nozzles (21), the atomizing nozzles (21) face the threaded rod (11), the production cylinder (1) is coiled with a water supply pipe (16) at the water cooling cavity (6), and the atomizing nozzles (21) and the water supply pipe (16) are connected in communication.
Citation Information
Patent Citations
High-efficiency silicon carbide crystal growth method and device
CN111962147A
Double-crucible silicon carbide crystal growth device and method
CN117737835A