A cleaning method and related apparatus for semiconductor equipment

Abstract

This specification provides a method for cleaning semiconductor equipment. In the cleaning process, it avoids misjudgments caused by reading fluctuations, specifically avoiding premature termination of the cleaning process due to reading fluctuations caused by using the detection value of a gas detection device to judge the progress of the cleaning process. The rate of change can effectively characterize the change in the content of reaction products in the exhaust gas. When the rate of change remains within a preset threshold range for a duration greater than or equal to a first time threshold, it indicates that the cleaning process for the target process chamber is nearing completion. Terminating the cleaning process under these conditions allows for thorough cleaning of the reactants deposited in the target process chamber, resulting in a better cleaning effect. Furthermore, it reduces damage to the chamber sidewalls or other components caused by excessively long cleaning times in the target process chamber.

Description

Technical Field

[0001] This specification relates to the field of semiconductor technology, specifically to cleaning technology for process chambers in the field of semiconductor technology, and more specifically to a cleaning method and related apparatus for semiconductor equipment. Background Technology

[0002] Currently, in semiconductor manufacturing processes, the feature size of semiconductor devices is getting smaller and smaller. Therefore, the requirements for semiconductor processing technology are also becoming more and more stringent. Among these requirements, the control of particles in the process is a key factor in controlling device yield.

[0003] For example, during the etching process of the object to be processed (taking a wafer as an example), byproducts of the etching reaction will continuously deposit and form particles on the top and sidewalls of the process chamber. During subsequent wafer etching, these particles may fall onto the wafer during the process. These particles act as a "mask," hindering further etching of the wafer. This prevents the photoresist pattern from being completely transferred onto the wafer, causing the etching lines to overlap and create electrical connections between devices, leading to device failure and affecting device yield.

[0004] Therefore, to ensure the consistency and yield of semiconductor equipment in wafer processing, maintenance personnel may develop corresponding cleaning strategies for the semiconductor equipment. These strategies might involve performing a cleaning process once per N wafers per process chamber (N can be an integer greater than 0). The aim is to remove reactants deposited on the sidewalls of the process chamber or in component gaps during the process, thereby ensuring high process consistency and yield when processing wafers. However, currently, cleaning the process chambers of semiconductor equipment is not very effective. Summary of the Invention

[0005] This specification provides a method and related apparatus for cleaning semiconductor equipment, aiming to improve the cleaning effect of the cleaning method for semiconductor equipment.

[0006] To achieve the above technical objectives, the embodiments of this specification provide the following technical solutions:

[0007] In a first aspect, one embodiment of this specification provides a method for cleaning a semiconductor device, the semiconductor device including a process chamber and a gas detection device, the method for cleaning the semiconductor device comprising:

[0008] A cleaning process is performed on the process chamber, and the sampling value of the gas detection device is acquired in real time; the sampling value is used to characterize the content of a preset component in the exhaust gas of the process chamber;

[0009] The detection value of the gas detection device is calculated based on multiple sampled values ​​within the current time window; the multiple sampled values ​​within the current time window include: sampled values ​​collected by the gas detection device in multiple consecutive sampling periods, and the multiple consecutive sampling periods include the current sampling period;

[0010] The rate of change is calculated based on the current detection value and the historical detection value of the gas detection device. The historical detection value of the gas detection device includes the detection value of the gas detection device calculated based on multiple sampled values ​​within the previous time window.

[0011] The cleaning process ends when the duration of the change rate being within a preset threshold range is greater than or equal to a first time threshold.

[0012] Secondly, one embodiment of this specification provides a cleaning apparatus for a semiconductor device, the semiconductor device including a process chamber and a gas detection device, the cleaning apparatus for the semiconductor device comprising:

[0013] The first acquisition module is used to perform a cleaning process on the process chamber and acquire the sampling value of the gas detection device in real time; the sampling value is used to characterize the content of a preset component in the exhaust gas of the process chamber;

[0014] The detection value calculation module is used to calculate the detection value of the gas detection device based on multiple sampling values ​​within the current time window; the multiple sampling values ​​within the current time window include: sampling values ​​collected by the gas detection device in multiple consecutive sampling periods, and the multiple consecutive sampling periods include the current sampling period;

[0015] The rate of change calculation module is used to calculate the rate of change based on the current detection value of the gas detection device and the historical detection value of the gas detection device. The historical detection value of the gas detection device includes the detection value of the gas detection device calculated based on multiple sampling values ​​within the previous time window.

[0016] The condition judgment module is used to terminate the cleaning process when the duration of the change rate being within a preset threshold range is greater than or equal to a first time threshold.

[0017] Thirdly, one embodiment of this specification also provides a computing device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the semiconductor device cleaning method described above.

[0018] Fourthly, one embodiment of this specification also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the semiconductor device cleaning method described above.

[0019] Fifthly, embodiments of this specification provide a computer program product or computer program, the computer program product including a computer program stored in a computer-readable storage medium; the processor of the computer device reads the computer program from the computer-readable storage medium, and when the processor executes the computer program, it implements the steps of the above-described semiconductor device cleaning method.

[0020] As can be seen from the above technical solution, the semiconductor equipment cleaning method provided in the embodiments of this specification uses the duration of the change rate within a preset threshold range as the criterion for determining whether to end the cleaning process in the cleaning process targeting the target process chamber. This change rate includes the change rate of the detection value of the gas detection device, which is used to characterize the content of reaction products in the exhaust gas of the target process chamber. In this way, misjudgment of the cleaning process due to fluctuations in the detection value of the gas detection device can be avoided; that is, misjudgment of the cleaning process due to fluctuations in the detection value of the gas detection device can be avoided. The cleaning process is terminated prematurely due to fluctuations in the value; however, the rate of change can better characterize the change in the content of reaction products in the gas discharged from the process chamber. When the rate of change is within the preset threshold range for a duration greater than or equal to the first time threshold, it can indicate that the content of reaction products in the process chamber tends to stabilize, that is, it indicates that the cleaning process for the target process chamber is coming to an end. Ending the cleaning process under this condition can, on the one hand, ensure that the cleaning process can thoroughly clean the reactants deposited in the target process chamber and achieve a better cleaning effect; on the other hand, it can reduce the damage to the sidewalls or other components of the chamber caused by an excessively long cleaning process. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments or prior art of this specification, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this specification. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0022] Figure 1 A schematic flowchart illustrating a method for cleaning a semiconductor device according to one embodiment of this specification;

[0023] Figure 2A schematic flowchart of another method for cleaning a semiconductor device provided as one embodiment of this specification;

[0024] Figure 3 A schematic diagram of a time window provided for one embodiment of this specification;

[0025] Figure 4 A schematic flowchart illustrating another method for cleaning a semiconductor device, provided as one embodiment of this specification;

[0026] Figure 5 This is a schematic diagram of the structure of a computing device provided for one embodiment of this specification. Detailed Implementation

[0027] Unless otherwise defined, the technical or scientific terms used in the embodiments of this specification shall have the ordinary meaning understood by one of ordinary skill in the art to which this specification pertains. The terms "first," "second," and similar terms used in the embodiments of this specification do not indicate any order, quantity, or importance, but are merely used to avoid confusion of constituent elements.

[0028] Unless the context otherwise requires, throughout this specification, "a plurality of" means "at least two," and "including" is interpreted as open-ended or encompassing, that is, "including, but not limited to." In the description of this specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this specification. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example.

[0029] The technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this specification.

[0030] Taking semiconductor equipment, including Chemical Vapor Deposition (CVD) equipment, as an example, the process chamber of the equipment is mainly used to allow specific process gases to flow into the chamber in a vacuum environment, causing them to undergo chemical reactions on the wafer substrate and form a thin film on the target substrate surface. Plasma Enhanced Chemical Vapor Deposition (PECVD) is an important method of chemical vapor deposition. In PECVD, the process gas is ionized in the process chamber to generate plasma, enhancing the chemical activity of the process gas and enabling it to react and deposit at low temperatures. During this process, reactants are deposited not only on the wafer surface but also on the chamber walls, components within the chamber, and gaps between components. Deposits outside the wafer surface can negatively impact the chamber environment and degrade the process results. Therefore, cleaning the process chamber is a necessary means to ensure process consistency and yield.

[0031] In related technologies, RPS (Remote Plasma Source) cleaning is an effective method for cleaning process chambers. RPS cleaning utilizes remote plasma technology to effectively clean semiconductor process chambers. RPS cleaning is primarily used to remove organic, inorganic, and other impurities deposited on chamber walls, components, and wafer surfaces during the process, ensuring the cleanliness and yield of subsequent process steps. The RPS cleaning process also requires the introduction of cleaning gas and the generation of plasma under specific conditions. The generated plasma reacts with the deposits adhering to the process chamber, oxidizing, decomposing, or evaporating the deposits, causing them to exist as gaseous substances and be discharged from the process chamber along with the cleaning gas, thus achieving chamber cleaning. In the RPS cleaning process, the active particles in the plasma can penetrate microstructures, reaching areas that are difficult to access with traditional wet cleaning methods, achieving a deep cleaning effect.

[0032] However, determining the end time of cleaning in methods like RPS remains a challenge for maintenance personnel. Ending the cleaning process too early may result in incomplete removal of deposits, while ending it too late may cause damage to the chamber walls and internal components caused by the cleaning gases. Currently, the cleaning time for semiconductor equipment is mainly determined by the experience of maintenance personnel. This approach requires a high level of expertise, and because the deposit condition within the process chamber can vary at the start of each cleaning cycle, the determined cleaning time is not accurate and may still lead to incomplete or over-cleaning.

[0033] To address this issue, the inventors discovered that during the cleaning of the process chamber, the cleaning gas carries reaction products (i.e., the reaction products between the deposits and the cleaning gas) out of the chamber. A parameter reflecting the content of these reaction products in the discharged gas can be collected using gas detection devices. Whether this parameter falls below a certain value indicates whether the cleaning process can be terminated. When this parameter is below a certain value, it can be considered that the content of reaction products in the discharged gas is low, and the deposits in the process chamber have been sufficiently reacted, allowing the cleaning process to end. However, further research revealed that this parameter reflecting the content of reaction products in the discharged gas may fluctuate due to factors such as interference from the hardware's environment. Therefore, relying on this parameter to determine whether to terminate the cleaning process may lead to misjudgment.

[0034] To address this issue, the inventors further discovered that in the cleaning process of the target process chamber, the duration for which the rate of change remains within a preset threshold range can be used as the criterion for determining whether to terminate the cleaning process. This rate of change includes the rate of change of the detection value from a gas detection device, which characterizes the content of reaction products in the exhaust gas from the target process chamber. This avoids misjudgments of the cleaning process due to fluctuations in the gas detection value, specifically preventing misjudgments caused by fluctuations in the gas detection value used to determine the progress of the cleaning process. The cleaning process is considered to be nearing completion. The rate of change can effectively characterize the change in the content of reaction products in the gas discharged from the process chamber. When the rate of change remains within a preset threshold range for a duration greater than or equal to a first time threshold, it indicates that the content of reaction products in the process chamber is stabilizing, signifying that the cleaning process for the target process chamber is nearing its end. Ending the cleaning process under these circumstances allows for thorough cleaning of the deposited reactants in the target process chamber, resulting in a better cleaning effect. Furthermore, it reduces the risk of damage to the chamber sidewalls or other components caused by prolonged cleaning of the target process chamber.

[0035] Based on the above concept, this specification provides a method for cleaning a semiconductor device. The method for cleaning a semiconductor device provided in this specification will be described exemplarily below with reference to the accompanying drawings.

[0036] Exemplary methods

[0037] To be applied Figure 1 Taking the controller in the example, this specification provides a method for cleaning a semiconductor device, including:

[0038] S101: Perform a cleaning process on the process chamber and acquire the sampling value of the gas detection device in real time. Calculate the rate of change based on the acquired sampling value. The sampling value is used to characterize the content of a preset component in the exhaust gas of the process chamber, and the rate of change is used to characterize the rate of change of the sampling value. Optionally, the preset component may include reaction products.

[0039] S102: When the duration of the change rate being within a preset threshold range is greater than or equal to a first time threshold, the cleaning process is terminated.

[0040] In one implementation, the controller may be a lower-level device of a semiconductor device.

[0041] The number of process chambers in a semiconductor device can be one or more, and similarly, the number of controllers can also be one or more. Each controller can control at least one process chamber, and the controller can determine whether to perform a cleaning process based on the status of the process chamber it controls (which may include, for example, the time since the last cleaning process, how many wafers have been processed, etc.).

[0042] Whether a cleaning process is required in the process chamber can be determined by the controller based on preset cleaning rules. These cleaning rules may include N wafers per process, a preset duration per process, or the interval between the current time and the last cleaning time exceeding a certain period, etc., but this specification does not specify these rules.

[0043] Once the process chamber that requires cleaning has been identified, it can be used as the target process chamber for cleaning. This cleaning process includes, but is not limited to, the RPS cleaning process.

[0044] In the cleaning process, the target process chamber will discharge gas as the cleaning process proceeds. The discharged gas may include cleaning gas used for cleaning. When there are deposits in the process chamber, the discharged gas may also include reaction products of the cleaning gas and the deposits. In the cleaning process, the rate of change of the detection value of the gas detection device, which characterizes the content of reaction products in the exhaust gas, can, to a certain extent, characterize the progress of the cleaning process for the target process chamber. This is because, generally, in the early stage of the cleaning process, due to the large amount of deposits and wide adhesion area in the target process chamber, the generation rate of reaction products between the cleaning gas and the deposits is relatively fast, and the content of reaction products in the exhaust gas is relatively high. As the cleaning process progresses, the amount and adhesion area of ​​deposits in the target process chamber gradually decrease, the reaction rate between the cleaning gas and the deposits decreases, the generation rate of reaction products also decreases accordingly, and the content of reaction products in the exhaust gas decreases accordingly. This is manifested as follows: in the early and middle stages of the cleaning process, there are certain deposits in the target process chamber, and the rate of change decreases significantly as the cleaning process progresses; however, in the final stage of the cleaning process, the amount and adhesion area of ​​deposits in the target process chamber approach zero, the reaction rate between the cleaning gas and the deposits also approach zero, and the generation rate of reaction products also approach zero. This is manifested as the rate of change approaching zero in the final stage of the cleaning process and fluctuating within a small range. Therefore, the rate of change can accurately reflect the progress of the cleaning process. When the rate of change stabilizes (e.g., fluctuates within a preset threshold range), it can be considered that the deposits in the target process chamber have basically reacted with the cleaning gas, and the cleaning process is essentially complete. Meanwhile, to avoid the rate of change occasionally falling within the preset threshold range due to reading fluctuations, the target process chamber can be considered essentially cleaned and the cleaning process can be terminated only when the rate of change remains within the preset threshold range for a certain period of time.

[0045] Therefore, in this embodiment, in the cleaning process of the target process chamber, the duration for which the rate of change is within a preset threshold range is used as the criterion for determining whether to end the cleaning process. This rate of change includes the rate of change of the detection value of the gas detection device, which is used to characterize the content of reaction products in the exhaust gas of the target process chamber. In this way, misjudgment of the cleaning process due to fluctuations in the detection value of the gas detection device can be avoided, that is, the situation where the cleaning process is prematurely ended due to fluctuations in the detection value of the gas detection device, which may be possible by using the detection value of the gas detection device to judge the progress of the cleaning process. The rate of change can better characterize the change in the content of reaction products in the exhaust gas of the process chamber. When the duration for which the rate of change is within the preset threshold range is greater than or equal to a first time threshold, it can be characterized that the content of reaction products in the process chamber tends to stabilize, that is, it indicates that the cleaning process of the target process chamber is coming to an end. Ending the cleaning process in this case can, on the one hand, ensure that the cleaning process can thoroughly clean the reactants deposited in the target process chamber and obtain a better cleaning effect; on the other hand, it can reduce the damage to the sidewalls or other components of the chamber caused by an excessively long cleaning process of the target process chamber.

[0046] To avoid distortion of the rate of change caused by fluctuations in hardware sampled values, in one implementation, such as Figure 2 As shown, the cleaning method for the semiconductor device includes:

[0047] S201: Perform a cleaning process on the process chamber and acquire the sampling value of the gas detection device in real time; the sampling value is used to characterize the content of a preset component in the exhaust gas of the process chamber;

[0048] S202: Calculate the detection value of the gas detection device based on multiple sampled values ​​within the current time window; the multiple sampled values ​​within the current time window include: sampled values ​​collected by the gas detection device in multiple consecutive sampling periods, and the multiple consecutive sampling periods include the current sampling period;

[0049] S203: Calculate the rate of change based on the current detection value of the gas detection device and the historical detection value of the gas detection device, wherein the historical detection value of the gas detection device includes the detection value of the gas detection device obtained by calculating based on multiple sampled values ​​within the previous time window;

[0050] S204: When the duration of the change rate being within a preset threshold range is greater than or equal to a first time threshold, the cleaning process is terminated.

[0051] A gas detection device is a device used to detect the content of reaction products in the exhaust gas of a target process chamber. Generally, there is a one-to-one correspondence between a gas detection device and a process chamber. This correspondence means that the gas detection device is used to detect the content of reaction products between the cleaning gas and the deposits in the target process chamber. For example, when a fluoride deposition process is performed in the target process chamber, the residual deposits in the target process chamber are also fluorides, and the gas detection device can be used to detect the fluoride content in the exhaust gas.

[0052] A time window is a way to divide a data stream along a time dimension. (See reference...) Figure 3 , Figure 3 The diagram illustrates how sampled values ​​are divided into multiple time windows according to time sequence. Figure 3 In the process, the sampled values ​​obtained by the gas detection device are arranged in chronological order. Each time window can include m sampled values. For example, the historical time window includes m sampled values ​​from the nth to the nth sampled value, and the current time window includes the (n-m+1)th to the (n+1)th sampled value.

[0053] A historical time window can refer to a time window excluding the most recent sampled value from the gas detector. A current time window can refer to a time window including the most recent sampled value from the gas detector; or, in other words, the time window where the latest sampled value is the most recent sampled value from the gas detector. For example, when the most recent sampled value from the gas detector is the nth data point, the time window including the nth data point to the nth data point is the current time window. When the gas detector collects the (n+1)th data point, the current time window slides to the right, meaning the current time window now includes the (n-m+1)th data point to the (n+1)th data point, and the time window including the nth data point to the nth data point becomes the historical time window. The length of the time window (i.e., the number of sampled values ​​m within the time window) can be determined based on the actual situation.

[0054] In this embodiment, the gas detection device's detection value is calculated using multiple sampled values ​​within the current time window. This helps to mitigate the interference caused by abnormal reading fluctuations due to hardware variations or environmental interference during a single sampling. In some embodiments, the gas detection device's detection value can be calculated by averaging the multiple sampled values ​​within the current time window. In other embodiments, it can be calculated by using a weighted average of the multiple sampled values ​​within the current time window. This specification does not limit this method; the specific method depends on the actual situation. Since the gas detection value obtained in this way is based on multiple consecutive sampled values, an occasional abnormal sampled value will not cause the gas detection device's detection value to deviate significantly from the normal value. This helps to mitigate the interference caused by abnormal reading fluctuations due to hardware variations or environmental interference during a single sampling, ensuring that the gas detection device's detection value more accurately reflects the content of reaction products in the discharged gas.

[0055] When the sampling interval of a gas detection device is not fixed or fluctuates, the importance of each sample value within a time window may differ. For example, after the gas detection device obtains the nth sample value, it takes a 10-second interval to obtain the (n+1)th sample value, and a 20-second interval to obtain the (n+2)th sample value. The (n+2)th sample value can, to some extent, reflect the content of reaction products in the discharged gas during the 20 seconds between the sampling time of the (n+1)th sample value and the sampling time of the (n+2)th sample value, and is therefore relatively more important than the (n+1)th sample value. Therefore, to reflect this difference and considering the varying importance of different sample values, in an optional implementation, calculating the detection value of the gas detection device based on multiple sample values ​​within the current time window includes:

[0056] The detection value of the gas detection device is calculated based on multiple sampled values ​​within the current time window and the time weights corresponding to each of the multiple sampled values; the time weights corresponding to the sampled values ​​represent the time length between the sampling time of the sampled value and the sampling time of the previous sampled value.

[0057] In this embodiment, by using the time weights corresponding to each sample value, the time length between the sampling time of each sample value and the sampling time of the previous sample value can be considered during the calculation of the detection value of the gas detection device. This allows the calculated detection value of the gas detection device to comprehensively consider the impact of the sampling interval on the sample value while mitigating the fluctuation of a certain sample value. As a result, the detection value of the gas detection device can more accurately reflect the content of reaction products in the discharged gas.

[0058] Specifically, in one embodiment, a feasible process is provided for calculating the detection value of the gas detection device based on multiple sampled values ​​within the current time window and the time weights corresponding to each of the multiple sampled values. This process includes:

[0059] The ratio of the weighted sum corresponding to the current time window to the total sampling time interval corresponding to the current time window is used as the detection value of the gas detection device in the current time window.

[0060] The weighted sum corresponding to the current time window includes the sum of the products of each sampled value within the current time window and the time weight corresponding to the sampled value. The total sampling time interval corresponding to the current time window includes the difference between the sampling time of the first sampled value and the sampling time of the last sampled value within the current time window.

[0061] The above calculation process can be expressed using the following formula:

[0062]

[0063] in, This represents the detection value of the gas detection device within the current time window. The current time window can include the nm-th sample value to the n-th sample value. i This represents the i-th sampled value obtained from sampling, where i = nm, n-m+1, ..., n, T i T represents the sampling time of the i-th sample value. i-1 T represents the sampling time of the (i-1)th sample value (i.e., the sample value preceding the ith sample value). n -T n-m This represents the difference between the sampling time of the first sampled value and the sampling time of the last sampled value within the current time window.

[0064] For example, suppose there are 6 sampled values: T1 to T6, with sampling times of 0 seconds, 2 seconds, 5 seconds, 8 seconds, 10 seconds, and 15 seconds, respectively. The current time window includes sampled values ​​T3 to T6. Then, the calculation process for the gas detection device's detection value in the current time window can include:

[0065]

[0066] Accordingly, in this embodiment, the rate of change can be calculated based on the following formula:

[0067]

[0068] Among them, K n Indicates the rate of change. This represents the calculated detection value of the gas detection device within the current time window. T represents the calculated gas detection value from the gas detection device in the previous time window. n T represents the sampling time of the nth sample value. n―m―1 This represents the sampling time of the (nm-1)th sample value.

[0069] Using the example above, suppose there are 6 sampled values: T1 to T6, with sampling times of 0 seconds, 2 seconds, 5 seconds, 8 seconds, 10 seconds, and 15 seconds respectively. The current time window includes sampled values ​​T3 to T6, and the previous time window includes sampled values ​​T2 to T5. Then, the calculation process of Kn can include:

[0070]

[0071]

[0072]

[0073] As mentioned earlier, this rate of change can effectively reflect the changing trend of the gas detection device's readings. A larger absolute value of the rate of change indicates a more drastic change in the reading, while a rate of change closer to 0 indicates a more gradual change. This rate of change falls within a preset threshold range (the preset threshold range could be, for example, K). High ~K Low , where K High and K Low All values ​​can be close to 0 (this value can be adjusted according to the actual situation) and the duration within which the time is greater than or equal to the first time threshold T Druation When the reading of the gas detection device is relatively flat, it indicates that the reactants generated by the cleaning process are at a stable low level, and the cleaning process is nearing completion.

[0074] In summary, by calculating the gas detection value and the rate of change using this method, the abnormal fluctuations of individual sample values ​​can be mitigated while comprehensively considering the sampling intervals between each sample value. This allows the gas detection value and the rate of change to more closely reflect the actual situation and the actual progress of the cleaning process. Consequently, the determination of whether to terminate the cleaning process can be made more accurately based on whether the rate of change is within a preset threshold range for a certain duration.

[0075] To accelerate the cleaning process and avoid damage to the process chamber, in one embodiment, the cleaning process includes: a first cleaning process and a second cleaning process executed sequentially; the chamber pressure in the first cleaning process is greater than the chamber pressure in the second cleaning process.

[0076] The calculation of the rate of change based on the current detection value and the historical detection value of the gas detection device includes:

[0077] In the second cleaning process, the rate of change is calculated based on the current detection value and the historical detection value of the gas detection device.

[0078] In this embodiment, the cleaning process is divided into two cleaning processes. The chamber pressure in the first cleaning process can be greater than that in the second cleaning process. For example, in one embodiment, the chamber pressure in the first cleaning process is typically above 0.2 Torr, while the chamber pressure in the second cleaning process is typically below 0.2 Torr. This allows for a higher reaction rate between the plasma obtained from the cleaning gas and the deposits in the first cleaning process, meeting the requirements for rapid cleaning. During this process, large areas of deposits can be removed. After the first cleaning process, a large area of ​​deposits in the target process chamber has been cleaned. At this point, the remaining deposits may be located in the gaps of the mechanical structure. The reactive area of ​​the deposits is small, requiring a long cleaning time to remove them completely. At this point, the second cleaning process begins, reducing the chamber pressure to decrease the reaction rate and corrosiveness of the plasma obtained from the cleaning gas, thus preventing excessively corrosive plasma from damaging the inner wall and components of the chamber.

[0079] Furthermore, in this embodiment, since the rate of change is a parameter for determining whether to end the cleaning process, the rate of change may not be acquired in the first cleaning process to reduce the computational burden.

[0080] Regarding the first cleaning process, in one embodiment of this specification, the cleaning method for the semiconductor device further includes: starting a timer when performing the first cleaning process, and ending the first cleaning process and starting the second cleaning process when the timer exceeds a second time threshold.

[0081] Optionally, the cleaning method for the semiconductor device further includes: starting a timer when performing the second cleaning process, and ending the second cleaning process when the timer exceeds a third time threshold; wherein the third time threshold is greater than the first time threshold.

[0082] Specifically, the aforementioned timing process can be implemented using a timer; that is, in one specific embodiment, the semiconductor device further includes a timer, and the cleaning method for the semiconductor device further includes:

[0083] When the first cleaning process begins, the timer is enabled to start counting.

[0084] In the first cleaning process, the detection value of the gas detection device is obtained. When the detection value of the gas detection device is less than a set gas threshold, or when the timing time of the timer is greater than a second time threshold, the first cleaning process ends and the second cleaning process begins.

[0085] In this embodiment, two conditions are set for ending the first cleaning process. One condition is that the detection value of the gas detection device is less than a set gas threshold. This set gas threshold can be related to the range (or maximum reading value) of the gas detection device. For example, in some embodiments, the set gas threshold can be 20% to 40% of the range of the gas detection device. In this case, if the detection value of the gas detection device is less than the set gas threshold, it indicates that a large area of ​​deposits in the target process chamber has been completely reacted. The remaining deposits are limited by factors such as the reactive area, which causes the reaction rate between the cleaning gas and the deposits to decrease, resulting in a smaller detection value of the gas detection device. In this way, it can be determined that a large area of ​​deposits in the target process chamber has been completely reacted, and the second cleaning process can begin. The second condition is that the timing time of the timer is greater than a second time threshold. The second time threshold can be a pre-set target cleaning duration of the first cleaning process (e.g., the longest duration that the first cleaning process can last). The second time threshold and the set gas threshold can be determined based on experimental methods or experience. This specification does not limit this.

[0086] In other embodiments, the termination condition for the first cleaning process may also be: at least one sampled value of the gas detection device is less than a set gas threshold. In this case, it can be characterized to a certain extent that the large-area deposits in the target process chamber have been completely reacted. To avoid the first cleaning process being terminated erroneously due to abnormal fluctuations in the sampled values ​​of the gas detection device caused by interference, the termination condition for the first cleaning process may be: multiple sampled values ​​of the gas detection device are less than the set gas threshold, or multiple sampled values ​​of the gas detection device are less than the set gas threshold within a certain period of time. This specification does not limit this to any particular condition; the specific condition depends on the actual situation.

[0087] In some cases, due to factors such as interference or malfunction of the gas detection device, or unreasonable setting of the gas threshold, the detection value of the gas detection device may not be lower than the set gas threshold during the first cleaning process. In this case, the timer may run for longer than the second time threshold. It can also be determined that the first cleaning process has ended and the second cleaning process can begin.

[0088] By using two conditions to determine whether the first cleaning process has ended, we can more accurately determine whether the first cleaning process has cleaned up a large area of ​​sediment, and avoid situations where the first cleaning process cannot be completed for a long time due to unexpected factors.

[0089] In one embodiment of this specification, the duration during which the rate of change is within a preset threshold range can be the total duration during which the rate of change is within the preset threshold range. In this case, the total duration during which the rate of change is within the preset threshold range in the second cleaning process can be counted. The total duration can include the sum of multiple discrete durations, and the decision to end the second cleaning process is based on the total duration.

[0090] In another embodiment of this specification, the duration for which the rate of change is within a preset threshold range can be the continuous duration for which the rate of change is within a preset threshold range. That is, the continuous duration for which the rate of change is within a preset threshold range is used as a condition for evaluating whether to end the second cleaning process. In this case, since the condition is set relatively strictly, the time for which the rate of change is within the preset threshold range due to parameter fluctuations is not included in the calculation, which is beneficial to ensure that the second cleaning process achieves a high degree of cleaning of the target process chamber.

[0091] Specifically, in this embodiment, ending the cleaning process when the duration of the change rate being within a preset threshold range is greater than or equal to a first time threshold includes:

[0092] When the second cleaning process begins, the timer is enabled to start counting from zero;

[0093] The cleaning process ends when the continuous duration of the rate of change being within a preset threshold range is greater than or equal to the first time threshold, or when the total timing time of the timer is greater than the third time threshold; the third time threshold is greater than the first time threshold.

[0094] Similarly, the first, second, and third time thresholds can be determined experimentally or based on historical experience. This manual does not impose any restrictions on this; the specific determination depends on the actual situation.

[0095] In this embodiment, similarly, in addition to setting the continuous duration of the rate of change being within the preset threshold range as a condition for ending the cleaning process, a condition is also set where the total timing time of the timer is greater than the third time threshold as another condition for ending the cleaning process. This avoids the problem that the cleaning process cannot be ended because the rate of change cannot be continuously within the preset threshold range for a long time.

[0096] Under normal circumstances, the condition for ending the first cleaning process and entering the second cleaning process should be: the detection value of the gas detection device is less than the set gas threshold, and the condition for ending the second cleaning process should be: the continuous duration of the change rate being within the preset threshold range is greater than or equal to the first time threshold. In this case, it indicates that both cleaning processes are proceeding as expected, and the deposits in the target process chamber are being normally reacted and removed during the cleaning process. If the first cleaning process ends due to the total timeout of the first cleaning process, or the second cleaning process ends due to the total timeout of the second cleaning process, it may indicate a possible software or hardware error. To remind maintenance personnel to promptly repair the equipment in such cases, in one embodiment, the semiconductor equipment cleaning method further includes:

[0097] When the first cleaning process is executed, the total duration of the first cleaning process is recorded. If the total duration of the first cleaning process exceeds the second time threshold, a first alarm message is generated. The first alarm message is used to indicate that there is an abnormality in the first cleaning process.

[0098] And / or, when performing the second cleaning process, the total duration of the second cleaning process is recorded. When the total duration of the second cleaning process exceeds a third time threshold, a second alarm message is generated. The second alarm message is used to indicate that there is an abnormality in the second cleaning process.

[0099] At least one of the first alarm information and the second alarm information may include information displayed on the controller of the semiconductor device in the form of text / symbols / graphics / images, or may include similar information sent to other terminals. This specification does not limit this.

[0100] In one specific implementation, the execution process of a feasible cleaning method is given, see [link to relevant documentation]. Figure 4 The process specifically includes:

[0101] After the cleaning begins, the first cleaning process is executed, the timer is started and kept running, and the timer records the duration of the first cleaning process.

[0102] During the first cleaning process, if the detection value of the gas detection device is greater than or equal to the set gas threshold, the first cleaning process continues. If the detection value of the gas detection device is less than the set gas threshold, the timer is turned off, the first cleaning process ends, the second cleaning process begins, and the timer is started / held to start. At this time, the timer's timing time represents the duration of the second cleaning process.

[0103] During the second cleaning process, the rate of change is calculated, and it is determined whether the duration of the rate of change within the preset threshold range is greater than or equal to the first time threshold. If so, the counter is terminated and the second cleaning process is terminated.

[0104] If not, determine whether the total timeout period is greater than the second time threshold. If yes, end the timer and terminate the second cleaning process. If no, continue executing the second cleaning process.

[0105] After the second cleaning process is completed, the entire cleaning process ends, and the cleaning method is finished.

[0106] As mentioned above, the termination condition of the first cleaning process can also be that the sampled value of the gas detection device is less than a set gas threshold. Therefore, in one embodiment, the execution process of the cleaning method includes:

[0107] After the cleaning begins, the first cleaning process is executed, the timer is started and kept running, and the timer records the duration of the first cleaning process.

[0108] During the first cleaning process, if the sampled value of the gas detection device is greater than or equal to the set gas threshold, the first cleaning process continues. If the sampled value of the gas detection device is less than the set gas threshold, the timer is turned off, the first cleaning process ends, the second cleaning process begins, and the timer is started / held to start. At this time, the timer's timing time represents the duration of the second cleaning process.

[0109] During the second cleaning process, the rate of change is calculated, and it is determined whether the duration of the rate of change within the preset threshold range is greater than or equal to the first time threshold. If so, the counter is terminated and the second cleaning process is terminated.

[0110] If not, determine whether the total timeout period is greater than the second time threshold. If yes, end the timer and terminate the second cleaning process. If no, continue executing the second cleaning process.

[0111] After the second cleaning process is completed, the entire cleaning process ends, and the cleaning method is finished.

[0112] Exemplary related devices

[0113] In one exemplary embodiment of this specification, a cleaning apparatus for a semiconductor device is also provided, applied to a controller of a semiconductor device, the cleaning apparatus comprising:

[0114] The first acquisition module is used to acquire the rate of change in the cleaning process of the target process chamber; the rate of change includes the rate of change of the detection value of the gas detection device, the detection value of the gas detection device is used to characterize the content of reaction products in the exhaust gas of the target process chamber;

[0115] The condition judgment module is used to terminate the cleaning process when the duration of the change rate being within a preset threshold range is greater than or equal to a first time threshold.

[0116] Specific limitations regarding the cleaning apparatus for semiconductor equipment can be found in the limitations regarding the cleaning methods for semiconductor equipment described above, and will not be repeated here. Each module in the aforementioned cleaning apparatus for semiconductor equipment can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in hardware or independently of the processor in a computer device, or stored in software in the memory of a computer device, so that the processor can call and execute the operations corresponding to each module.

[0117] In one exemplary embodiment of this specification, a semiconductor device is also provided, including: a process chamber, an inlet assembly, a gas detection device, and a controller; wherein,

[0118] The controller includes at least one processor and at least one memory, the memory storing a computer program that, when executed by the processor, implements the semiconductor device cleaning method described in any of the above embodiments.

[0119] The controller includes, but is not limited to, the lower-level machine of the semiconductor device.

[0120] For relevant limitations on the cleaning methods for semiconductor equipment, please refer to the descriptions above; these will not be repeated here.

[0121] Exemplary computing device

[0122] Another embodiment of this specification also proposes a computing device, see [link to documentation]. Figure 5 As shown, an exemplary embodiment of this specification also provides a computing device, including: a memory and a processor, the memory storing a computer program, the processor executing the computer program to perform the steps in the cleaning method for a semiconductor device according to various embodiments of this specification as described in the above embodiments.

[0123] The internal structure of the computing device can be as follows: Figure 5As shown, the computing device includes a processor, memory, network interface, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it follows the steps of the semiconductor device cleaning method according to various embodiments of this specification as described in the above embodiments.

[0124] The processor may include the main processor, as well as baseband chips, modems, etc.

[0125] The memory stores a program that executes the technical solution of this invention, and may also store an operating system and other critical business functions. Specifically, the program may include program code, which includes computer operation instructions. More specifically, the memory may include read-only memory (ROM), other types of static storage devices capable of storing static information and instructions, random access memory (RAM), other types of dynamic storage devices capable of storing information and instructions, disk storage, flash memory, etc.

[0126] The processor can be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits used to control the execution of the program of the present invention. It can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0127] Input devices may include devices that receive data and information input by the user, such as keyboards, mice, cameras, scanners, light pens, voice input devices, touch screens, pedometers, or gravity sensors.

[0128] Output devices may include devices that allow information to be output to the user, such as displays, printers, speakers, etc.

[0129] The communication interface may include any transceiver-like device for communicating with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0130] The processor executes programs stored in memory and calls other devices, which can be used to implement the various steps of the cleaning method for any semiconductor device provided in the above embodiments of this specification.

[0131] The computing device may also include a display component and a voice component. The display component may be a liquid crystal display screen or an e-ink display screen. The input device of the computing device may be a touch layer covering the display component, or a button, trackball or touchpad set on the casing of the computing device, or an external keyboard, touchpad or mouse, etc.

[0132] Those skilled in the art will understand that Figure 5 The structures shown are merely block diagrams of some structures related to the solutions in this specification and do not constitute a limitation on the computing devices on which the solutions in this specification are applied. Specific computing devices may include more or fewer components than those shown in the figures, or combine certain components, or have different component arrangements.

[0133] Exemplary computer program products and storage media

[0134] In addition to the methods and devices described above, the semiconductor device cleaning methods provided in the embodiments of this specification can also be computer program products, which include computer program instructions that, when executed by a processor, cause the processor to perform the steps in the semiconductor device cleaning methods according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0135] The aforementioned computer program product can be implemented through hardware, software, or a combination thereof. In one optional embodiment, the computer program product is specifically embodied in a computer storage medium; in another optional embodiment, the computer program product is specifically embodied in a software product, such as a software development kit (SDK), etc.

[0136] The computer program product described herein can be written in any combination of one or more programming languages ​​to perform the operations of the embodiments described herein. These programming languages ​​include object-oriented programming languages ​​such as Java and C++, as well as conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0137] Furthermore, embodiments of this specification also provide a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor of the steps in the cleaning methods for semiconductor devices according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0138] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this specification can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0139] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0140] The embodiments described above are merely illustrative of several implementation methods outlined in this specification. While the descriptions are specific and detailed, they should not be construed as limiting the scope of the solutions provided in this specification. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this specification, and these all fall within the scope of protection of this specification. Therefore, the scope of protection for this patent should be determined by the appended claims.

Claims

1. A cleaning method for a semiconductor device, the semiconductor device comprising a process chamber and a gas detection device; characterized in that, The cleaning method includes: A cleaning process is performed on the process chamber, and the sampling value of the gas detection device is acquired in real time; the sampling value is used to characterize the content of a preset component in the exhaust gas of the process chamber; The detection value of the gas detection device is calculated based on multiple sampled values ​​within the current time window; the multiple sampled values ​​within the current time window include: sampled values ​​collected by the gas detection device in multiple consecutive sampling periods, and the multiple consecutive sampling periods include the current sampling period; Based on the current detection value and the historical detection value of the gas detection device, the rate of change is calculated. The historical detection value of the gas detection device includes the detection value of the gas detection device obtained by calculating based on multiple sampled values ​​within the previous time window. The cleaning process ends when the duration for which the rate of change is within a preset threshold range is greater than or equal to a first time threshold; the duration for which the rate of change is within the preset threshold range is the continuous duration for which the rate of change is within the preset threshold range.

2. The cleaning method according to claim 1, characterized in that, The calculation of the detection value of the gas detection device based on multiple sampled values ​​within the current time window includes: The detection value of the gas detection device is calculated based on multiple sampled values ​​within the current time window and the time weights corresponding to each of the multiple sampled values; the time weights corresponding to the sampled values ​​represent the time length between the sampling time of the sampled value and the sampling time of the previous sampled value.

3. The cleaning method according to claim 2, characterized in that, The calculation of the detection value of the gas detection device based on multiple sampled values ​​within the current time window and the time weights corresponding to each of the multiple sampled values ​​includes: The ratio of the weighted sum corresponding to the current time window to the total sampling time interval corresponding to the current time window is used as the detection value of the gas detection device in the current time window. The weighted sum corresponding to the current time window includes the sum of the products of each sampled value within the current time window and the time weight corresponding to the sampled value. The total sampling time interval corresponding to the current time window includes the difference between the sampling time of the first sampled value and the sampling time of the last sampled value within the current time window.

4. The cleaning method according to claim 2, characterized in that, The calculation of the detection value of the gas detection device based on multiple sampled values ​​within the current time window and the time weights corresponding to each of the multiple sampled values ​​includes: Substitute multiple sampled values ​​within the current time window and their respective time weights into the first preset formula to calculate the detection value of the gas detection device. The first preset formula includes: in, This represents the detection value from the gas detection device. The current time window includes the nm-th sample value to the n-th sample value. This represents the i-th sampled value, where i = nm, n-m+1, ..., n. This represents the sampling time of the i-th sample value. This represents the sampling time of the (i-1)th sample value. This represents the difference between the sampling time of the first sampled value and the sampling time of the last sampled value within the current time window.

5. The cleaning method according to claim 4, characterized in that, The calculation of the rate of change based on the current and historical detection values ​​of the gas detection device includes: The current detection value and the historical detection value of the gas detection device are substituted into the second preset formula to calculate the rate of change. The second preset formula includes: in, Indicates the rate of change. This represents the current detection value of the gas detection device within the calculated current time window. This represents the historical detection value of the gas detection device in the previous time window, calculated from the previous time window. This represents the sampling time of the nth sample value. This represents the sampling time of the (nm-1)th sample value.

6. The cleaning method according to claim 1, characterized in that, Perform a cleaning process on the process chamber, including: The first cleaning process and the second cleaning process are executed sequentially, wherein the chamber pressure used in the first cleaning process is greater than the chamber pressure used in the second cleaning process; The calculation of the rate of change based on the current and historical detection values ​​of the gas detection device includes: In the second cleaning process, the rate of change is calculated based on the current detection value and the historical detection value of the gas detection device.

7. The cleaning method according to claim 6, characterized in that, Also includes: When performing the first cleaning process, the detection value of the gas detection device is obtained. When the detection value of the gas detection device is less than a set gas threshold, the first cleaning process ends and the second cleaning process begins.

8. The cleaning method according to claim 6, characterized in that, Also includes: When the first cleaning process is executed, a timer is started. When the timer exceeds the second time threshold, the first cleaning process ends and the second cleaning process begins.

9. The cleaning method according to claim 6, characterized in that, Also includes: When performing the second cleaning process, a timer is started, and the second cleaning process ends when the timer exceeds a third time threshold. The third time threshold is greater than the first time threshold.

10. The cleaning method according to any one of claims 1 to 9, characterized in that, The cleaning process includes: a first cleaning process and a second cleaning process executed sequentially; the cleaning method further includes: When the first cleaning process is executed, the total duration of the first cleaning process is recorded. If the total duration of the first cleaning process exceeds the second time threshold, a first alarm message is generated. The first alarm message is used to indicate that there is an abnormality in the first cleaning process. And / or, when performing the second cleaning process, the total duration of the second cleaning process is recorded. When the total duration of the second cleaning process exceeds a third time threshold, a second alarm message is generated. The second alarm message is used to indicate that there is an abnormality in the second cleaning process.

11. A semiconductor device, comprising a process chamber, an inlet assembly, a gas detection device, and a controller, characterized in that, The controller includes at least one processor and at least one memory, the memory storing a computer program that, when executed by the processor, implements the cleaning method as described in any one of claims 1-10.

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