Silicon wafer edge collapse defect visual detection device, method and system
By designing a silicon film collapse deficiency visual detection device including light sources and prism, it solves the problem of time and effort and light source interference in existing detection methods, and achieves fast and accurate collapse defect detection.
Patent Information
- Application Number
- CN202411117527.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-15
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2044-08-15
AI Technical Summary
The existing method of detecting silicon wafer edge collapse defects has problems such as time-consuming and laborious manual visual inspection and interference of light source and inconvenient debugging of tilt angles in machine vision detection.
Design a silicon wafer lareless visual detection device including first linear light sources, first linear prisms, second linear prisms and machine visual cameras. Through the combination of light sources and prisms, the detection image of the silicon wafer is tested. Determine whether there is a defect in collapse.
It achieves fast and accurate detection of silicon wafer chipping defects, avoids the time-consuming and laborious problem of manual inspection, reduces light interference by optimizing the light source configuration, and simplifies the debugging process of the device.
Smart Images

Figure CN118641479B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of silicon wafer sorting, and in particular to a device, method and system for visually detecting chipped edge defects of silicon wafers. Background Art
[0002] Currently, silicon wafer edge collapse defect detection is divided into manual visual inspection and machine vision inspection.
[0003] The disadvantages of manual visual inspection are: time-consuming and labor-intensive.
[0004] The disadvantages of machine vision inspection are: Taking the Chinese invention patent application CN117030729A "A method and device for detecting front and rear edge collapse defects of silicon wafers" (publication date: November 10, 2023) as an example, the technical solution includes: a frame, an inspection box, an image acquisition device and a light source. The image acquisition device includes a front line scan camera and a rear line scan camera installed obliquely relative to the inspection box. The front line scan camera and the rear line scan camera are used to collect image information of the front and rear edges of the silicon wafer, respectively. The light source includes a front light source and a rear light source installed in the inspection box. The front light source is located below the front line scan camera. The rear light source is located below the rear line scan camera. Due to the limited internal space of the inspection box, there is a problem that it is inconvenient to adjust the inclination angle of the front line scan camera and the rear line scan camera. In addition, since there are both front and rear light sources inside the detection box, there is mutual interference between the two. That is, the front line-scan camera is interfered by the light from the rear light source during operation, and the rear line-scan camera is also interfered by the light from the front light source during operation, which affects the algorithm detection and may cause misjudgment. Summary of the invention
[0005] The purpose of the present invention is to solve the time-consuming and laborious problem caused by manual visual inspection of front and rear edge collapse defects of silicon wafers, and to provide a novel visual inspection device, method and system for silicon wafer edge collapse defects.
[0006] In order to achieve the above-mentioned purpose, the present invention provides a technical solution: a visual detection device for chipping defects of silicon wafers, which is used to detect whether there is a chipping defect on the tested end face of the silicon wafer under test. The visual detection device for chipping defects of silicon wafers comprises: a first linear light source, a first linear prism, a second linear prism and a machine vision camera. The first linear light source is on the incident side of the first linear prism, and the tested end face of the silicon wafer under test is on the exit side of the first linear prism. The tested end face of the silicon wafer under test is on the incident side of the second linear prism, and the machine vision camera is on the exit side of the second linear prism. The first linear light source is relative to the first linear prism, and the light emitted by the first linear light source is reflected by the mirror surface of the first linear prism to the tested end face of the silicon wafer under test, and then reflected by the mirror surface of the tested end face of the silicon wafer under test to the second linear prism, and finally reflected by the mirror surface of the second linear prism to the machine vision camera. The method has the following beneficial effects: the machine vision camera can sample the detection image of the tested end surface of the tested silicon wafer, and then determine whether the tested end surface of the tested silicon wafer has edge collapse defects based on the detection image, so as to solve the time-consuming and labor-intensive problem caused by manual visual inspection of the tested end surface of the tested silicon wafer.
[0007] As a preferred solution of the visual inspection device for chipped edge defects of silicon wafers, it also includes: a second linear light source. The second linear light source is on the incident side of the chamfered surface connected to the measured end face of the silicon wafer under test, and the second linear prism is on the emitting side of the chamfered surface connected to the measured end face of the silicon wafer under test. The second linear light source is relative to the chamfered surface connected to the measured end face of the silicon wafer under test, and the light emitted by the second linear light source is reflected to the second linear prism through the mirror surface of the chamfered surface connected to the measured end face of the silicon wafer under test, and then reflected to the machine vision camera through the mirror surface of the second linear prism. It has the following beneficial effects: the machine vision camera can also sample the detection image of the chamfered surface connected to the measured end face of the silicon wafer under test, and then judge whether there is a chipped edge defect on the chamfered surface connected to the measured end face of the silicon wafer under test according to the detection image, so as to avoid the chamfered surface defect becoming a blind spot for visual inspection.
[0008] As a preferred solution of the visual detection device for chipped edge defects of silicon wafers, the tested end face of the tested silicon wafer is one of the front end face and the rear end face of the tested silicon wafer. The tested end face of the tested silicon wafer, the first linear light source, the first linear prism and the second linear prism are arranged horizontally and parallel. The second linear light source is arranged horizontally and parallel to the side surface of the tested silicon wafer adjacent to the tested end face. The following beneficial effects are achieved: the visual detection device for chipped edge defects of silicon wafers can only visually detect one of the front end face and the rear end face of the tested silicon wafer.
[0009] As a preferred solution of the visual inspection device for chipped edge defects of silicon wafers, it further includes: a light source chamber. The light source chamber has an upper chamber and a lower chamber. The tested end face of the tested silicon wafer, the first linear light source, the second linear prism, and the second linear light source are all inside the upper chamber. The first linear prism is inside the lower chamber. It has the following beneficial effects: the light source chamber is used to accommodate the tested end face of the tested silicon wafer, the first linear light source, the first linear prism, the second linear prism, and the second linear light source.
[0010] As a preferred embodiment of the visual inspection device for chipped edge defects of silicon wafers, the upper chamber has a chamber wall horizontally surrounding the first linear light source, the second linear light source and the second linear prism. The lower chamber has a chamber wall horizontally surrounding the first linear prism. The following beneficial effects are achieved: the chamber wall of the upper chamber is used to prevent the first linear light source, the second linear light source and the second linear prism from being disturbed by the outside world, or the first linear light source, the second linear light source and the second linear prism from interfering with the outside world. Similarly, the chamber wall of the lower chamber is used to prevent the first linear prism from being disturbed by the outside world, or the first linear prism from interfering with the outside world.
[0011] As a preferred solution of the visual inspection device for chipped edge defects of silicon wafers, the machine vision camera is above the upper chamber. The upper chamber has a chamber top wall. The chamber top wall has a linear through groove. The linear through groove is arranged in parallel with the second linear prism. The linear through groove is between the second linear prism and the machine vision camera. The field of view of the machine vision camera covers the linear through groove. It has the following beneficial effects: through the linear through groove, the machine vision camera can sample the inspection image of the tested end face of the tested silicon wafer and the inspection image of the chamfered surface connected to the tested end face of the tested silicon wafer. In addition, the machine vision camera is independent outside the light source chamber, which is convenient for installation, debugging and daily maintenance.
[0012] As a preferred solution of the visual inspection device for chipping defects of silicon wafers, the second linear prism is located directly below the linear through groove. The machine vision camera is located directly above the linear through groove. The shooting direction of the machine vision camera is vertically downward. The second linear prism is further configured to: reflect the reflected light of the second linear prism vertically upward. It has the following beneficial effects: specifically defining the optimal position relationship between the linear through groove, the second linear prism, and the machine vision camera.
[0013] Another technical solution provided by the present invention: a method for visually detecting chipped edge defects of silicon wafers, which is implemented by the visual detection device for chipped edge defects of silicon wafers, comprising: step S1, sampling a detection image of a tested end face of the tested silicon wafer: the first linear light source is triggered by the stroboscopic operation, and the light emitted by the first linear light source is reflected by the mirror surface of the first linear prism to the tested end face of the tested silicon wafer, and then reflected by the mirror surface of the tested end face of the tested silicon wafer to the second linear prism, and finally reflected by the mirror surface of the second linear prism to the machine vision camera, and the machine vision camera samples a detection image of the tested end face of the tested silicon wafer; and step S2, judging whether there is a chipped edge defect on the tested end face of the tested silicon wafer based on the sampled detection image of the tested end face of the tested silicon wafer. The method has the following beneficial effects: according to the sampled detection image of the tested end face of the tested silicon wafer, it is judged whether the tested end face of the tested silicon wafer has edge collapse defects, so as to solve the time-consuming and laborious problem caused by manual visual detection of the front and rear edge collapse defects of the silicon wafer.
[0014] As a preferred solution of the visual detection method for chipping defects of silicon wafers, in step S1, a detection image of the chamfered surface connected to the tested end face of the silicon wafer under test is also sampled: the light emitted by the second linear light source is reflected by the mirror surface of the chamfered surface connected to the tested end face of the silicon wafer under test to the second linear prism, and then reflected by the mirror surface of the second linear prism to the machine vision camera, so that the machine vision camera can also sample the detection image of the chamfered surface connected to the tested end face of the silicon wafer under test. In step S2, it is also judged whether the chamfered surface connected to the tested end face of the silicon wafer under test has a chipping defect based on the sampled detection image of the chamfered surface connected to the tested end face of the silicon wafer under test. It has the following beneficial effects: according to the sampled detection image of the chamfered surface connected to the tested end face of the silicon wafer under test, it is judged whether the chamfered surface connected to the tested end face of the silicon wafer under test has a chipping defect, so as to avoid the chamfered surface defect from becoming a blind spot of visual detection.
[0015] Another technical solution provided by the present invention is a visual detection system for chipped edge defects of silicon wafers, comprising: the visual detection devices for chipped edge defects of silicon wafers, respectively at the front and rear ends of the silicon wafer under test. One of the visual detection devices for chipped edge defects of silicon wafers is used to detect the front end face of the silicon wafer under test, and the other visual detection device for chipped edge defects of silicon wafers is used to detect the rear end face of the silicon wafer under test. The system has the following beneficial effects: the front end face and the rear end face of the silicon wafer under test are visually detected independently without the problem of mutual interference.
[0016] In addition to the technical problems solved by the present invention, the technical features that constitute the technical solution, and the beneficial effects brought about by the technical features of the technical solution described above, other technical problems that can be solved by the present invention, other technical features included in the technical solution, and the beneficial effects brought about by these technical features will be further described in detail in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a schematic structural diagram of an embodiment of a visual inspection device for silicon wafer edge collapse defects of the present invention.
[0018] Figure 2 It is a schematic structural diagram of an embodiment of a visual inspection device for chipped edge defects of silicon wafers according to the present invention (part of the peripheral wall of the light source chamber is omitted).
[0019] Figure 3 It is a schematic diagram of the principle of an embodiment of a visual inspection device for silicon wafer edge collapse defects of the present invention.
[0020] Figure 4 It is a detection image sampled by a machine vision camera in an embodiment of the visual detection device for chipping defects of silicon wafers of the present invention.
[0021] Figure 5 It is a flow chart of an embodiment of a method for visually detecting chipped edge defects of silicon wafers according to the present invention.
[0022] Figure 6 It is a schematic structural diagram of an embodiment of a silicon wafer edge collapse defect visual inspection system of the present invention. DETAILED DESCRIPTION
[0023] The present invention is further described in detail below by means of specific embodiments in combination with the accompanying drawings. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.
[0024] See also Figures 1 to 3 , shown in the figure is a visual detection device for chipping defects of silicon wafers. The visual detection device for chipping defects of silicon wafers is an important component of a silicon wafer sorting machine. The visual detection device for chipping defects of silicon wafers is used to detect whether a chipping defect exists on a tested end face 91 of a tested silicon wafer 9. The tested end face 91 of the tested silicon wafer 9 is one of the front end face and the rear end face of the tested silicon wafer 9.
[0025] The silicon chip edge chipping defect visual detection device comprises: a light source chamber 1, a first linear light source 2, a first linear prism 3, a second linear prism 4 and a machine vision camera 5, etc.
[0026] The end surface 91 of the silicon wafer 9 to be tested, the first linear light source 2, the first linear prism 3 and the second linear prism 4 are all inside the light source chamber 1, while the machine vision camera 5 is outside the light source chamber 1. The end surface 91 of the silicon wafer 9 to be tested, the first linear light source 2, the first linear prism 3, the second linear prism 4 and the machine vision camera 5 are configured as follows: Figure 2 and Figure 3 , the end face 91 of the silicon wafer 9 to be tested, the first linear light source 2, the first linear prism 3 and the second linear prism 4 are arranged in parallel. The first linear light source 2 is on the incident side of the first linear prism 3, and the end face 91 of the silicon wafer 9 to be tested is on the exit side of the first linear prism 3. The end face 91 of the silicon wafer 9 to be tested is on the incident side of the second linear prism 4, and the machine vision camera 5 is on the exit side of the second linear prism 4. The first linear light source 2 is opposite to the first linear prism 3. The light emitted by the first linear light source 2 is reflected by the first linear prism 3 to the end face 91 of the silicon wafer 9 to be tested, and then reflected by the end face 91 of the silicon wafer 9 to be tested to the second linear prism 4, and finally reflected by the second linear prism 4 to the machine vision camera 5. As a result, the machine vision camera 5 can sample the detection image of the end face 91 of the silicon wafer 9 to be tested.
[0027] Furthermore, all the light emitted by the first linear light source 2 falls on the first linear prism 3 , all the reflected light from the tested end surface 91 of the tested silicon wafer 9 falls on the second linear prism 4 , and all the reflected light from the second linear prism 4 falls on the machine vision camera 5 .
[0028] Furthermore, the silicon wafer 9 to be tested (including the end face 91 to be tested) and the second linear prism 4 both avoid the optical path between the first linear light source 2 and the first linear prism 3 , so as not to affect the light emitted by the first linear light source 2 from reaching the first linear prism 3 .
[0029] Furthermore, the first linear light source 2 and the first linear prism 3 both avoid the light path between the measured end surface 91 of the measured silicon wafer 9 and the second linear prism 4, so as not to affect the reflected light from the measured end surface 91 of the measured silicon wafer 9 reaching the second linear prism 4.
[0030] Furthermore, the first linear light source 2 , the first linear prism 3 and the silicon wafer 9 to be measured (including the end face 91 to be measured) all avoid the optical path between the second linear prism 4 and the machine vision camera 5 , so as not to affect the reflected light of the second linear prism 4 reaching the machine vision camera 5 .
[0031] Furthermore, the light source chamber 1 has an upper chamber and a lower chamber.
[0032] The first linear light source 2 and the second linear prism 4 are disposed inside the upper chamber 101. The wall of the upper chamber 101 is used to prevent the first linear light source 2 or the second linear prism 4 from being disturbed by the outside world, or the first linear light source 2 and the second linear prism 4 from disturbing the outside world. Preferably, the wall of the upper chamber 101 includes: a chamber peripheral wall horizontally surrounding the first linear light source 2 and the second linear prism 4, and a chamber top wall located above the first linear light source 2 and the second linear prism 4.
[0033] The first linear prism 3 is disposed inside the lower chamber 102. The wall of the lower chamber is used to prevent the first linear prism 3 from being disturbed by the outside world, or the first linear prism 3 disturbs the outside world. Preferably, the lower chamber 102 has a chamber peripheral wall horizontally surrounding the first linear prism 3 and a bottom wall located below the first linear prism 3.
[0034] In a specific implementation, the silicon wafer 9 to be tested is arranged horizontally. The first linear light source 2 is higher than the end surface 91 to be tested of the silicon wafer 9 to be tested. The first linear prism 3 is lower than the end surface 91 to be tested of the silicon wafer 9 to be tested. The second linear prism 4 is flush with or higher than the end surface 91 to be tested of the silicon wafer 9 to be tested. The horizontal distance from the first linear prism 3 to the end surface 91 to be tested of the silicon wafer 9 to be tested is smaller than the horizontal distance from the second linear prism 4 to the end surface 91 to be tested of the silicon wafer 9 to be tested.
[0035] In a specific implementation, the top wall of the chamber has a linear through groove 10. The linear through groove 10 is through from top to bottom. That is, the linear through groove 10 connects the inside and outside of the light source chamber 1. The linear through groove 10 is located directly above the second linear prism 4 and the two are arranged in parallel. The machine vision camera 5 is located directly above the linear through groove. The shooting direction of the machine vision camera 5 is vertically downward. The field of view of the machine vision camera 5 (the triangular area in the figure) covers the linear through groove 10. The second linear prism 4 is further configured to: reflect the reflected light of the second linear prism 4 vertically upward, so that the reflected light of the second linear prism 4 can pass through the linear through groove to reach the machine vision camera 5.
[0036] During specific implementation, the machine vision camera 5 can be an area array camera or a line scan camera.
[0037] During specific implementation, the setting angles of the first linear light source 2, the first linear prism 3 and the second linear prism 4 can be adjusted as needed.
[0038] Furthermore, the visual inspection device for chipped edge defects of silicon wafers also includes: a second linear light source 6. The second linear light source 6 is inside the light source chamber 1. The second linear light source 6 is on the incident side of the chamfered surface connected to the end face 91 of the silicon wafer 9 under test, and the second linear prism 4 is on the exit side of the chamfered surface connected to the end face 91 of the silicon wafer 9 under test. The second linear light source 6 is opposite to the side of the silicon wafer 9 under test that is adjacent to the end face 91 of the silicon wafer 9 under test. The light emitted by the second linear light source 6 is reflected by the mirror surface of the chamfered surface connected to the end face 91 of the silicon wafer 9 under test to the second linear prism 4, and then reflected by the mirror surface of the second linear prism 4 to the machine vision camera 5. With such a design, the machine vision camera 5 can sample both the inspection image of the end face 91 of the silicon wafer 9 under test and the inspection image of the chamfered surface connected to the end face 91 of the silicon wafer 9 under test (see for details). Figure 4 ) to avoid chamfer surface defects becoming blind spots in visual inspection.
[0039] In a specific implementation, the second linear light source 6 is arranged parallel to the side surface of the silicon wafer 9 to be tested that is adjacent to the end surface 91 to be tested (i.e., the left side surface and the right side surface of the silicon wafer 9 to be tested). The second linear light source 6 is flush with or slightly lower than the side surface of the silicon wafer 9 to be tested that is adjacent to the end surface 91 to be tested.
[0040] See also Figure 5 , the figure shows a method for visually detecting chipping defects of silicon wafers. The visual detection of chipping defects of silicon wafers is realized by the visual detection device for chipping defects of silicon wafers. The visual detection device for chipping defects of silicon wafers can be combined with Figures 1 to 3 The method for visually detecting chipping defects of silicon wafers comprises:
[0041] Step S1, sampling a detection image of the end face 91 of the silicon wafer 9 to be tested: the first linear light source 2 is triggered by stroboscopic operation. The light emitted by the first linear light source 2 is reflected by the first linear prism 3 to the end face 91 of the silicon wafer 9 to be tested, and then reflected by the end face 91 of the silicon wafer 9 to be tested to the second linear prism 4, and finally reflected by the second linear prism 4 to the machine vision camera 5. The machine vision camera 5 samples a detection image of the end face 91 of the silicon wafer 9 to be tested.
[0042] Step S2, based on the sampled detection image of the detected end face 91 of the silicon wafer 9 to be tested, determine whether the detected end face 91 of the silicon wafer 9 to be tested has a chipping defect: if there is a penetration or partial pixel loss in the overexposed area of the image in the detection image and the grayscale value is lower than the grayscale setting value and the area is larger than the area setting value, then it is determined that the detected end face 91 of the silicon wafer 9 to be tested has a chipping defect. Further, in step S1, the detection image of the chamfered surface connected to the detected end face 91 of the silicon wafer 9 to be tested is also sampled: the light emitted by the second linear light source 6 is reflected by the mirror surface of the chamfered surface connected to the detected end face 91 of the silicon wafer 9 to be tested to the second linear prism 4, and then reflected by the mirror surface of the second linear prism 4 to the machine vision camera 5, thereby the machine vision camera 5 can also sample the detection image of the chamfered surface connected to the detected end face 91 of the silicon wafer 9 to be tested. In step S2, based on the sampled detection image of the chamfered surface connected to the measured end face 91 of the silicon wafer 9 under test, it is judged whether the chamfered surface connected to the measured end face 91 of the silicon wafer 9 under test has a chipping defect: the judgment method is the same as the measured end face 91.
[0043] See also Figure 6 , shown in the figure is a visual detection system for chipping defects of silicon wafers. The visual detection system for chipping defects of silicon wafers is used to visually detect whether there are chipping defects on the front and rear surfaces of the silicon wafer 9 under test at the same time. The visual detection system for chipping defects of silicon wafers comprises: two visual detection devices for chipping defects of silicon wafers. The two visual detection devices for chipping defects of silicon wafers are respectively located at the front and rear ends of the silicon wafer 9 under test. The two visual detection devices for chipping defects of silicon wafers are independent of each other (the light source chamber 1 in one of the visual detection devices for chipping defects of silicon wafers is not connected to the light source chamber 1 in the other visual detection device for chipping defects of silicon wafers). One of the visual detection devices for chipped edge defects of silicon wafers is used to detect the front end face of the silicon wafer 9 under test (i.e., the front end face of the silicon wafer 9 under test is inside the light source chamber 1 in one of the visual detection devices for chipped edge defects of silicon wafers, and is sampled by the machine vision camera 5 in one of the visual detection devices for chipped edge defects of silicon wafers), while the other visual detection device for chipped edge defects of silicon wafers is used to detect the rear end face of the silicon wafer 9 under test (i.e., the rear end face of the silicon wafer 9 under test is inside the light source chamber 1 in another of the visual detection devices for chipped edge defects of silicon wafers, and is sampled by the machine vision camera 5 in another of the visual detection devices for chipped edge defects of silicon wafers). The two visual detection devices for chipped edge defects of silicon wafers can independently perform visual detection tasks without affecting each other, and there is no light interference problem.
[0044] The above only expresses the implementation mode of the present invention, and its description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.
Claims
1. A visual inspection system for silicon chip edge collapse defects, characterized in that: include: Two visual detection devices for chipping edges of silicon wafers are respectively located at the front and rear ends of the silicon wafer to be tested, and the two visual detection devices for chipping edges of silicon wafers are independent of each other; the front end face of the silicon wafer to be tested is inside the light source chamber of one of the visual detection devices for chipping edges of silicon wafers, one of the visual detection devices for chipping edges of silicon wafers is used to detect the front end face of the silicon wafer to be tested, and the rear end face of the silicon wafer to be tested is inside the light source chamber of the other visual detection device for chipping edges of silicon wafers, and the other visual detection device for chipping edges of silicon wafers is used to detect the rear end face of the silicon wafer to be tested; The visual detection device for chipping defects of silicon wafers is used to detect whether there is a chipping defect on the tested end face of the silicon wafer under test, and the visual detection device for chipping defects of silicon wafers comprises: a first linear light source, a first linear prism, a second linear prism and a machine vision camera; the first linear light source is on the incident side of the first linear prism, and the tested end face of the silicon wafer under test is on the exit side of the first linear prism; the tested end face of the silicon wafer under test is on the incident side of the second linear prism, and the machine vision camera is on the exit side of the second linear prism; the first linear light source is relative to the first linear prism, and the light emitted by the first linear light source is reflected by the mirror surface of the first linear prism to the tested end face of the silicon wafer under test, and then reflected by the mirror surface of the tested end face of the silicon wafer under test to the second linear prism, and finally reflected by the mirror surface of the second linear prism to the machine vision camera, so that the machine vision camera can sample a detection image of the tested end face of the silicon wafer under test; The silicon wafer chipping defect visual inspection device further includes: a second linear light source, the second linear light source is on the incident side of the chamfered surface connected to the measured end face of the silicon wafer under test, and the second linear prism is on the emitting side of the chamfered surface connected to the measured end face of the silicon wafer under test; the second linear light source is relative to the chamfered surface connected to the measured end face of the silicon wafer under test, and the light emitted by the second linear light source is reflected by the mirror surface of the chamfered surface connected to the measured end face of the silicon wafer under test to the second linear prism, and then reflected by the mirror surface of the second linear prism to the machine vision camera, so that the machine vision camera can also sample the detection image of the chamfered surface connected to the measured end face of the silicon wafer under test; The measured end face of the measured silicon wafer, the first linear light source, the first linear prism and the second linear prism are arranged horizontally and parallelly; the second linear light source and the side face of the measured silicon wafer adjacent to the measured end face are arranged horizontally and parallelly; The light source chamber in the silicon wafer edge collapse defect visual inspection device comprises an upper chamber and a lower chamber, wherein the tested end face of the tested silicon wafer, the first linear light source, the second linear prism, and the second linear light source are all inside the upper chamber, and the first linear prism is inside the lower chamber; The upper chamber has a chamber peripheral wall horizontally surrounding the first linear light source, the second linear light source and the second linear prism; the lower chamber has a chamber peripheral wall horizontally surrounding the first linear prism.
2. The silicon wafer edge collapse defect visual inspection system according to claim 1, characterized in that: The machine vision camera is above the upper chamber, the upper chamber has a chamber top wall, the chamber top wall has a linear through groove, the linear through groove is arranged parallel to the second linear prism, the linear through groove is between the second linear prism and the machine vision camera, and the field of view of the machine vision camera covers the linear through groove.
3. The silicon wafer edge collapse defect visual inspection system according to claim 2, characterized in that: The second linear prism is located directly below the linear through-groove, the machine vision camera is located directly above the linear through-groove, the shooting direction of the machine vision camera is vertically downward, and the second linear prism is further configured to: reflect the reflected light of the second linear prism vertically upward.
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