Probe unit, inspection device, inspection system, inspection method, and method for manufacturing semiconductor laser device

Abstract

The probe unit (20) includes: first and second probes (30, 40) having elastic restoring force; a probe fixing member (24) that fixes the first and second probes (30, 40); and a probe through member (23) disposed below the probe fixing member (24) away from the probe fixing member (24) and formed with first and second through holes (26a, 26b) through which the first and second probes (30, 40) pass, respectively; the probe through member (23) has an opposing surface (21u) that opposes the object to be inspected; portions of the first and second probes (30, 40) that protrude downward from the opposing surface (21u) are movable in the vertical direction; and in a state in which the first and second probes (30, 40) are not in contact with the object to be inspected, a lower end (31) of the first probe (30) is lower than a lower end (41) of the second probe (40).

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a probe unit, an inspection apparatus, an inspection system, an inspection method, and a manufacturing method of a semiconductor laser device. BACKGROUND

[0002] Conventionally, there is an inspection apparatus that checks a characteristic of an inspection object by supplying a current to the inspection object using a plurality of probes (for example, refer to Patent Literature 1 and the like). In the inspection apparatus described in Patent Literature 1, since the probes supported by a support body have an elastic restoring force, in a case where the support body is moved toward the inspection object, the probes in contact with the inspection object are deformed, and thus it is possible to suppress an excessive force from the probes acting on the inspection object. Thus, it is possible to suppress damage to the inspection object at the time of inspection.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2015-4518 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] However, in the inspection apparatus described in Patent Literature 1, there is also a case where the inspection object is damaged.

[0008] The present disclosure is made to solve such a problem, and aims to provide a probe unit and the like that can reduce damage to an inspection object at the time of inspection.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] In order to solve the above problem, a technical scheme of a probe unit of the present disclosure includes a part of a current circuit for supplying a current to an inspection object, and is provided with: a first probe and a second probe included in the current circuit and having an elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member away from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe, respectively, pass; the probe through member has an opposing surface opposite to the inspection object through which the first probe and the second probe pass; a portion of the first probe and the second probe protruding downward from the opposing surface is movable in a vertical direction; and in a state where the first probe and the second probe are not in contact with the inspection object, a lower end of the first probe is lower than a lower end of the second probe.

[0011] To solve the above problem, a technology of the inspection device of the present disclosure has the probe unit, a table having a placement surface on which the inspection object is placed, and a height adjustment member disposed between the probe unit and the table. The height adjustment member is disposed on the opposing surface of the probe unit.

[0012] To solve the above problem, a technology of the inspection system of the present disclosure has the inspection device and a conveyance device that conveys the inspection device. The inspection device is conveyed while the first probe and the second probe are in contact with the inspection object.

[0013] To solve the above problem, a technology of the inspection method of the present disclosure checks the characteristics of an inspection object by supplying a current to the inspection object. The inspection object has a sub-assembly having an upper surface and a component having a component upper surface, which is disposed on the upper surface of the sub-assembly and to which the current is supplied. The sub-assembly has a first electrode disposed on the upper surface. The component has a second electrode disposed on the component upper surface. The inspection method includes a first contact process of bringing a first probe into contact with the first electrode and a second contact process of bringing a second probe into contact with the second electrode after the first contact process while the first probe is in contact with the first electrode. The first probe and the second probe are included in a current circuit that supplies the current to the inspection object and have an elastic restoring force.

[0014] To solve the above problem, another technology of the inspection method of the present disclosure checks the characteristics of an inspection object by supplying a current to the inspection object. The inspection object has a sub-assembly having an upper surface and a component having a component upper surface, which is disposed on the upper surface of the sub-assembly and to which the current is supplied. The sub-assembly has a first electrode disposed on the upper surface. The component has a second electrode disposed on the component upper surface. The inspection method includes a supply process of supplying the current to the inspection object while a first probe is in contact with the first electrode and a second probe is in contact with the second electrode, a second separation process of separating the second probe from the second electrode after the supply process, and a first separation process of separating the first probe from the first electrode after the second separation process. The first probe and the second probe are included in a current circuit that supplies the current to the inspection object and have an elastic restoring force.

[0015] To solve the above problems, a technical aspect of the manufacturing method of a semiconductor laser device of the present disclosure is a manufacturing method of a semiconductor laser device, including: an assembling step of assembling the semiconductor laser device; and an inspection step of inspecting the semiconductor laser device as the inspection object using the inspection method. The element is a semiconductor laser element.

[0016] Effects of Invention

[0017] According to the present disclosure, it is possible to provide a probe unit or the like that can reduce damage to an inspection object. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic side view showing the overall structure of the inspection device of Embodiment 1.

[0019] Figure 2 is a schematic plan view showing the structure of the probe unit of Embodiment 1.

[0020] Figure 3 is a schematic first cross-sectional view showing the structure of the probe unit of Embodiment 1.

[0021] Figure 4 is a schematic second cross-sectional view showing the structure of the probe unit of Embodiment 1.

[0022] Figure 5 is a schematic cross-sectional view showing the shape of the first probe in a state in which the lower end of the first probe is not subjected to a force upward in Embodiment 1.

[0023] Figure 6 is a schematic cross-sectional view showing the shape of the first probe in a state in which the lower end of the first probe is subjected to a force upward in Embodiment 1.

[0024] Figure 7 is a schematic side view explaining each step of the inspection method of Embodiment 1.

[0025] Figure 8 is a schematic side view explaining each step of the inspection method of Embodiment 1.

[0026] Figure 9 is a schematic plan view showing each step of the first position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0027] Figure 10 is a schematic plan view showing each step of the first position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0028] Figure 11is a schematic plan view showing each process of the first position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0029] Figure 12 is a schematic plan view showing each process of the first position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0030] Figure 13 is a schematic plan view showing each process of the second position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0031] Figure 14 is a schematic plan view showing each process of the second position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0032] Figure 15 is a schematic plan view showing each process of the second position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0033] Figure 16 is a schematic plan view showing each process of the second position adjustment method of the inspection object in the inspection method of Embodiment 1.

[0034] Figure 17 is a schematic side view showing each process of the inspection method of Embodiment 1.

[0035] Figure 18 is a schematic side view showing each process of the inspection method of Embodiment 1.

[0036] Figure 19 is a schematic side view showing each process of the inspection method of Embodiment 1.

[0037] Figure 20 is a schematic side view showing each process of the inspection method of Embodiment 1.

[0038] Figure 21 is a schematic side view showing each process of the inspection method of Embodiment 1.

[0039] Figure 22 is a schematic sectional view for explaining the operation of the probe unit of Embodiment 1.

[0040] Figure 23 is a schematic sectional view for explaining the operation of the probe unit of Embodiment 1.

[0041] Figure 24 is a schematic sectional view for explaining the operation of the probe unit of Embodiment 1.

[0042] Figure 25is a schematic cross-sectional view for explaining the operation of the probe unit of Embodiment 1.

[0043] Figure 26 is a schematic cross-sectional view for explaining the operation of the probe unit of Embodiment 1.

[0044] Figure 27 is a schematic cross-sectional view for explaining the operation of the probe unit of Embodiment 1.

[0045] Figure 28 is a schematic cross-sectional view for explaining the operation of the probe unit of Embodiment 1.

[0046] Figure 29 is a schematic view showing the positional relationship between the first probe and the first through-hole in the case where the first probe does not exhibit the buckling phenomenon in Embodiment 1.

[0047] Figure 30 is a schematic view showing the positional relationship between the first probe and the first through-hole in the case where the first probe exhibits the buckling phenomenon in Embodiment 1.

[0048] Figure 31 is a schematic plan view showing the overall structure of the inspection system in Embodiment 1.

[0049] Figure 32 is a schematic plan view showing the overall structure of the inspection system in the modification example of Embodiment 1.

[0050] Figure 33 is a flowchart showing the flow of the manufacturing method of the semiconductor laser device in Embodiment 1.

[0051] Figure 34 is a schematic cross-sectional view showing a part of the probe unit in Modification Example 1.

[0052] Figure 35 is a schematic cross-sectional view showing a part of the probe unit in Modification Example 2.

[0053] Figure 36 is a schematic cross-sectional view showing a part of the probe unit in Modification Example 3.

[0054] Figure 37 is a schematic cross-sectional view showing a part of the probe unit in Modification Example 4.

[0055] Figure 38 is a schematic plan view showing a part of the probe through member of the probe unit in Modification Example 5.

[0056] Figure 39 is a schematic plan view showing a part of the probe through member of the probe unit in Modification Example 6.

[0057] Figure 40 is a schematic cross-sectional view showing a part of the probe unit of Modification 7.

[0058] Figure 41 is a schematic side view showing the structure of each probe of the probe unit of Modification 8.

[0059] Figure 42 is a schematic side view showing the structure of each probe of the probe unit of Modification 8.

[0060] Figure 43 is a schematic side view showing the structure of each probe of the probe unit of Modification 8.

[0061] Figure 44 is a schematic cross-sectional view showing a part of the probe unit of Modification 9.

[0062] Figure 45 is a schematic cross-sectional view showing a part of the probe unit of Modification 10.

[0063] Figure 46 is a schematic perspective view showing a first embodiment of the through member inclined surface and the table inclined surface of Embodiment 1.

[0064] Figure 47 is a schematic cross-sectional view showing the first embodiment of the through member inclined surface and the table inclined surface of Embodiment 1.

[0065] Figure 48 is a schematic cross-sectional view showing a second embodiment of the through member inclined surface and the table inclined surface of Embodiment 1.

[0066] Figure 49 is a schematic perspective view showing a third embodiment of the through member inclined surface and the table inclined surface of Embodiment 1.

[0067] Figure 50 is a schematic cross-sectional view showing a fourth embodiment of the through member inclined surface of Embodiment 1.

[0068] Figure 51 is a schematic plan view showing the structure of the probe unit of Embodiment 2.

[0069] Figure 52 is a schematic cross-sectional view showing the structure of the probe unit of Embodiment 2.

[0070] Figure 53 is a schematic cross-sectional view showing a state in which the height adjustment member disposed in the probe unit is in contact with the table of Embodiment 2.

[0071] Figure 54 is a schematic cross-sectional view showing the structure of the probe unit of Embodiment 3.

[0072] Figure 55 is a schematic cross-sectional view showing a state in which the unit contact surface of the height adjustment member arranged in the worktable is brought into contact with the probe unit of Embodiment 3.

[0073] Figure 56 is a schematic cross-sectional view showing the structure of the probe unit of Embodiment 4.

[0074] Figure 57 is a schematic cross-sectional view showing a state in which the height adjustment member arranged in the probe unit is brought into contact with the worktable of Embodiment 4.

[0075] Figure 58 is a schematic plan view showing the structure of the probe unit of Embodiment 5.

[0076] Figure 59 is a schematic first cross-sectional view showing the structure of the probe unit of Embodiment 5.

[0077] Figure 60 is a schematic second cross-sectional view showing the structure of the probe unit of Embodiment 5.

[0078] Figure 61 is a schematic plan view showing the structure of the probe unit of Embodiment 6.

[0079] Figure 62 is a schematic first cross-sectional view showing the structure of the probe unit of Embodiment 6.

[0080] Figure 63 is a schematic second cross-sectional view showing the structure of the probe unit of Embodiment 6.

[0081] Figure 64 is a schematic plan view showing the structure of the probe unit of Embodiment 7.

[0082] Figure 65 is a schematic cross-sectional view showing the structure of the probe unit of Embodiment 7.

[0083] Figure 66 is a schematic cross-sectional view showing a state in which the height adjustment member arranged in the probe unit is brought into contact with the worktable of Embodiment 7. DETAILED DESCRIPTION

[0084] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below shows one specific example of the present disclosure. Thus, numerical values, shapes, materials, configurations, and the like shown in the following embodiments are shown as one example and are not intended to limit the present disclosure.

[0085] Further, each drawing is a schematic view and is not necessarily strictly illustrated. Thus, the scale and the like are not necessarily consistent in each drawing. In each drawing, the same reference numeral is given to substantially the same structure, and repeated description is omitted or simplified.

[0086] Further, in the present specification, relational terms not only represent the relationship of the elements in question but also represent the shape, and the like of the elements, and numerical ranges, and the like, are not only represent the strict meaning but also mean a substantially equivalent range, for example, a range including a difference of several percent or so.

[0087] Further, in the present specification, the terms "upper" and "lower" do not necessarily refer to the vertical upper and lower in the absolute spatial recognition, but are used as terms to define the relative positional relationship of the constituent elements. Further, the terms "upper" and "lower" are applied not only to the case where two constituent elements are arranged apart from each other with a space between the two constituent elements, but also to the case where two constituent elements are arranged in a state of contacting each other.

[0088] (Embodiment 1)

[0089] The probe unit, the inspection apparatus, the inspection system, the inspection method, and the manufacturing method of the semiconductor laser device of Embodiment 1 will be described.

[0090] [1-1. Overall structure of inspection apparatus]

[0091] First, the use of the terms "upper" and "lower" will be described. Figure 1 The overall structure of the inspection apparatus of the present embodiment will be described. Figure 1 is a schematic side view showing the overall structure of the inspection apparatus 10 of the present embodiment. Further, in each drawing, the X-axis, the Y-axis, and the Z-axis orthogonal to each other are shown. The X-axis, the Y-axis, and the Z-axis are a right-handed orthogonal coordinate system. Further, in the drawings, in order to explain the relative position in the Z-axis direction, "upper" is used as a term indicating the positive side in the Z-axis direction, and "lower" is used as a term indicating the negative side in the Z-axis direction, with respect to a certain position in the Z-axis direction. Figure 1 In the drawings, a semiconductor laser device 80, which is an example of an inspection target of the inspection apparatus 10, is also shown. Further, in each drawing, in order to explain the relative position in the Z-axis direction, "upper" is used as a term indicating the positive side in the Z-axis direction, and "lower" is used as a term indicating the negative side in the Z-axis direction, with respect to a certain position in the Z-axis direction.

[0092] The inspection apparatus 10 is an apparatus that inspects the characteristics of an inspection target by supplying a current to the inspection target. As shown in Figure 1As shown, the inspection device 10 of this embodiment includes a probe unit 20, a worktable 70, a height adjustment component 50, a base 11, a support column 12, sliding rails 13, 15, and 17, an up-and-down moving component 14, a unit moving component 16, a connecting spring 18, and a unit support component 19.

[0093] The base 11 is a platform on which other components of the inspection device 10 are mounted. The worktable 70 and the support column 12 are mounted on the base 11.

[0094] The worktable 70 is a component having a mounting surface 70a for placing the object to be inspected. In this embodiment, the mounting surface 70a includes surfaces relative to the vertical direction (…). Figure 1 A flat surface perpendicular to the Z-axis direction is provided on the mounting surface 70a, and an inspection object is placed on this flat surface. An adsorption hole 72 is formed at the position where the inspection object is placed on the mounting surface 70a. The inspection object placed on the mounting surface 70a is adsorbed using the adsorption hole 72, thereby temporarily fixing the inspection object to the mounting surface 70a without damaging it.

[0095] The probe unit 20 includes a portion of a current circuit for supplying current to the object being inspected, and includes a first probe 30, etc. The detailed structure of the probe unit 20 will be described later. The probe unit 20 is fixed to the unit support member 19.

[0096] The height adjustment member 50 is a member disposed between the probe unit 20 and the table 70. The height adjustment member 50 is a member that can be handled as a rigid body, and functions as a spacer that defines the minimum interval between the probe unit 20 and the table 70. In the present embodiment, the height adjustment member 50 is a plate-shaped member having a thickness corresponding to the minimum interval between the probe unit 20 and the table 70, and is fixed to the probe unit 20. The height adjustment member 50 has a unit contact surface 50b that contacts the probe unit 20, and a table contact surface 50a that contacts the table 70. The table contact surface 50a is a rough surface. In the present embodiment, the table contact surface 50a is a rough surface. Thereby, the frictional force between the table contact surface 50a and the table 70 can be increased, so that the positional displacement of the height adjustment member 50 and the probe unit 20 with respect to the table 70 can be suppressed by pressing the height adjustment member 50 against the table 70 (the placement surface 70a). The rough surface can be defined, for example, by a surface having an arithmetic mean roughness Ra of 0.2 μm or more. The arithmetic mean roughness Ra of the table contact surface 50a and the unit contact surface 50b can be, for example, 0.8 μm or more and 1.6 μm or less. In the present embodiment, the height adjustment member 50 is formed of SUS440C, and the arithmetic mean roughness Ra of the table contact surface 50a is 1.2 μm. Note that the material forming the height adjustment member 50 is not particularly limited as long as it is a material that can be handled as a rigid body. Further, the arithmetic mean roughness Ra of the placement surface 70a of the table 70 can be, for example, 0.1 μm or more and 2.0 μm or less. In the present embodiment, the material forming the table 70 is a WC-Co alloy (sintered body of tungsten carbide and cobalt), and the arithmetic mean roughness Ra of the placement surface 70a is 0.15 μm. With such a configuration, a frictional force sufficient to suppress the positional displacement of the height adjustment member 50 with respect to the table 70 can be obtained between the table contact surface 50a and the placement surface 70a.

[0097] The support column 12 is a columnar member erected on the base 11. The support column 12 extends in the vertical direction.

[0098] The slide rail 13 is a rail-shaped member fixed to the support column 12. The slide rail 13 has a fixed portion and a slide portion, and the slide portion is supported so as to be slidable with respect to the fixed portion in the vertical direction. The fixed portion of the slide rail 13 is fixed to the support column 12, and the slide portion of the slide rail 13 is fixed to the vertical movement member 14.

[0099] The up-and-down moving member 14 is a member that moves in the up-and-down direction with respect to the support 12. In the present embodiment, the up-and-down moving member 14 is fixed to the slide rail 13 and moves in the up-and-down direction. In more detail, the up-and-down moving member 14 is fixed to the slide portion of the slide rail 13 and moves in the up-and-down direction with respect to the fixed portion of the slide rail 13. The up-and-down moving member 14 has a portion that extends in the up-and-down direction and a portion that extends in the horizontal direction. The portion of the up-and-down moving member 14 that extends in the up-and-down direction is fixed to the slide portion of the slide rail 13. The portion of the up-and-down moving member 14 that extends in the horizontal direction extends in the Y-axis direction in the example shown. Figure 1 The slide rail 15 is fixed to the portion of the up-and-down moving member 14 that extends in the horizontal direction.

[0100] The slide rail 15 is a rail-shaped member that is fixed to the up-and-down moving member 14. The slide rail 15 has a fixed portion and a slide portion, and the slide portion is supported so as to be slidable with respect to the fixed portion in the horizontal direction. In the present embodiment, the slide portion is supported so as to be slidable with respect to the fixed portion of the slide rail 15 in the Y-axis direction. The fixed portion of the slide rail 15 is fixed to the portion of the up-and-down moving member 14 that extends in the horizontal direction, and the slide portion of the slide rail 15 is fixed to the unit moving member 16.

[0101] The unit moving member 16 is a member that moves the unit support member 19. In the present embodiment, the unit moving member 16 moves in the horizontal direction with respect to the up-and-down moving member 14. The unit moving member 16 is fixed to the slide rail 15 and moves in the Y-axis direction. In more detail, the unit moving member 16 is fixed to the slide portion of the slide rail 15 and moves in the Y-axis direction with respect to the fixed portion of the slide rail 15. The unit moving member 16 has a portion that extends in the horizontal direction and a portion that extends in the up-and-down direction. The portion of the unit moving member 16 that extends in the horizontal direction is fixed to the slide portion of the slide rail 15. The portion of the unit moving member 16 that extends in the up-and-down direction has the slide rail 17 and one end of the connecting spring 18 fixed thereto.

[0102] The slide rail 17 is a rail-shaped member that is fixed to the unit moving member 16. The slide rail 17 has a fixed portion and a slide portion, and the slide portion is supported so as to be slidable with respect to the fixed portion in the up-and-down direction. The fixed portion of the slide rail 17 is fixed to the portion of the unit moving member 16 that extends in the up-and-down direction, and the slide portion of the slide rail 17 is fixed to the unit support member 19. That is, the slide rail 17 connects the unit support member 19 so as to be slidable with respect to the unit moving member 16 in the up-and-down direction.

[0103] The connecting spring 18 is an elastic member that connects the unit moving member 16 and the unit supporting member 19. In the present embodiment, one end of the connecting spring 18 is connected to the unit moving member 16, and the other end is fixed to the unit supporting member 19.

[0104] The unit supporting member 19 is a member that supports the probe unit 20. The unit supporting member 19 is fixed to the slide rail 17. In the present embodiment, the unit supporting member 19 is fixed to the slide portion of the slide rail 17. Further, in the unit supporting member 19, the other end of the connecting spring 18 is fixed. In this way, by connecting the unit supporting member 19 and the unit moving member 16 with the connecting spring 18 and the slide rail 17, the relative positions of the unit supporting member 19 and the unit moving member 16 in the vertical direction are restricted.

[0105] In the present embodiment, the unit supporting member 19 supports the probe unit 20 to which the height adjustment member 50 is fixed. That is, the unit supporting member 19 is integrated with the probe unit 20 and the height adjustment member 50.

[0106] Here, a case where a force is applied to the unit moving member 16 in a direction in which the unit moving member 16 is further moved downward in a state where the height adjustment member 50 is in contact with the table 70 will be described. In this case, since the height adjustment member 50 integrated with the unit supporting member 19 is in contact with the table 70, the unit supporting member 19 cannot be moved downward. When the force to move the unit moving member 16 downward becomes larger than the elastic force of the connecting spring 18, the connecting spring 18 is extended, and the unit moving member 16 is moved downward with respect to the unit supporting member 19. In this way, by connecting the unit supporting member 19 and the unit moving member 16 via the connecting spring 18 and the slide rail 17, it is possible to push the height adjustment member 50 against the table 70 with a force corresponding to the spring constant of the connecting spring 18 while suppressing the application of an excessive force to the probe unit 20 and the height adjustment member 50 supported by the unit supporting member 19. In other words, by the above structure, it is possible to easily maintain the force to fix the probe unit 20 to the table 70 while maintaining the positional relationship between the probe unit 20 and the table 70.

[0107] In the present embodiment, the distance between the lower end of the pillar 12 that does not substantially vibrate with respect to the base 11 and the height adjustment member 50 is long by being connected to the base 11. Further, there are a plurality of members between the pillar 12 and the height adjustment member 50. Therefore, vibrations are likely to occur in the height adjustment member 50. In particular, as described above, the height adjustment member 50 is likely to be vibrated by the vibration of the pillar 12. Figure 1As shown in the example, the shape formed by the plurality of members present between the support 12 and the height adjustment member 50 is not straight but C-shaped, so vibration is more likely to occur. However, in the present embodiment, the spring constant of the connecting spring 18 is appropriately set, and vibration is able to be suppressed by pushing the height adjustment member 50 against the stage 70, so the relative positional deviation of the height adjustment member 50 with respect to the stage 70 is able to be suppressed. For example, in a state where the height adjustment member 50 is pushed against the stage 70, even if the entire inspection device 10 is moved, the relative positional deviation of the height adjustment member 50 with respect to the stage 70 is able to be suppressed. That is, the relative positional deviation of the first probe 30 and the like possessed by the probe unit 20 with respect to the semiconductor laser device 80 is able to be suppressed, and damage to the semiconductor laser device 80 at the time of inspection is able to be mitigated.

[0108] [1-2. Structure of probe unit and stage]

[0109] By Figures 2-4 The structure of the probe unit 20 and the stage 70 of the present embodiment will be described. Figure 2 、 Figure 3 and Figure 4 are schematic plan views, a first cross-sectional view, and a second cross-sectional view, respectively, showing the structure of the probe unit 20 of the present embodiment. In Figure 3 , the cross section at the III-III line shown in Figure 2 is shown. In Figure 4 , the cross section at the IV-IV line shown in Figure 2 is shown. In addition, in Figure 3 and Figure 4 , the height adjustment member 50, the stage 70, and the semiconductor laser device 80 as an inspection target are shown together. Furthermore, in Figure 2 and Figure 4 , a measurement device 90 that measures light from the light emitting point 82e of the semiconductor laser device 80 is shown together. The measurement device 90 has a light receiving portion 92 that receives light, and measures, for example, the power of the received light or the like.

[0110] The probe unit 20, as shown in Figure 2 and Figure 3 , has the first probe 30, the second probe 40, and a unit main body 21.

[0111] The unit main body 21 is a main body portion of the probe unit 20, and fixes the first probe 30 and the second probe 40. The unit main body 21 has a cavity 21v inside in cross section. The unit main body 21 has a probe fixing member 24 and a probe through member 23.

[0112] The probe fixing member 24 is a member that fixes the first probe 30 and the second probe 40. In the present embodiment, the probe fixing member 24 is a plate-shaped member formed with a first fixing hole 27a and a second fixing hole 27b. The first probe 30 is fixed to the probe fixing member 24 with an adhesive 28 in a state of being inserted into the first fixing hole 27a. The second probe 40 is fixed to the probe fixing member 24 with the adhesive 28 in a state of being inserted into the second fixing hole 27b.

[0113] The probe through member 23 is disposed below the probe fixing member 24 separately from the probe fixing member 24, and is a member formed with a first through hole 26a and a second through hole 26b through which the first probe 30 and the second probe 40 pass, respectively. In the present embodiment, the probe through member 23 is a plate-shaped member formed with the first through hole 26a and the second through hole 26b. There is a hollow 21v between the probe fixing member 24 and the probe through member 23. The first probe 30 and the second probe 40 are inserted into the first through hole 26a and the second through hole 26b, respectively, and are not fixed to the probe through member 23. The probe through member 23 has an opposing surface 21u opposite to the inspection object, through which the first probe 30 and the second probe 40 pass. In the present embodiment, the opposing surface 21u includes a flat flat portion perpendicular to the up-down direction. The first probe 30 and the second probe 40 have portions protruding downward from the opposing surface 21u. The portions of the first probe 30 and the second probe 40 that protrude downward from the opposing surface 21u are movable in the up-down direction, and are disposed in a manner perpendicular to a surface contacted by the second probe 40 in the semiconductor laser device 80.

[0114] The opposing surface 21u of the probe through member 23 has a through member inclined surface 21s inclined with respect to the up-down direction. The through member inclined surface 21s rises away from the first through hole 26a and the second through hole 26b. The through member inclined surface 21s is located between a position of the opposing surface 21u above the inspection object and an outer edge of the opposing surface 21u. Such an opposing surface 21u has the through member inclined surface 21s, and thus, in a case where the measurement device 90 is brought close to the probe unit 20, it is possible to reduce physical interference of the measurement device 90 with the probe unit 20. Further, in a case where a light emitting element such as a semiconductor laser element is used as the inspection object, by disposing the through member inclined surface 21s at a portion of the opposing surface 21u opposite to a light propagation path, it is possible to reduce a case where light emitted from the inspection object is blocked by the opposing surface 21u.

[0115] In the present embodiment, the through member inclined surface 21s is a light reflection suppression surface. The light reflection suppression surface refers to a surface in which the front surface reflectance is 3% or less in the wavelength of light emitted from the inspection object. Thus, in the through member inclined surface 21s, it is possible to suppress the case in which light from the inspection object is diffusely reflected to become noise in light measurement. As the light reflection suppression surface, for example, a matt black painted surface, a roughened surface, or the like can be used.

[0116] The first probe 30 and the second probe 40 are electrically conductive members that include elastic restoring force in a current circuit that supplies a current to the inspection object. In the present embodiment, the first probe 30 and the second probe 40 each include a metal wire that has elastic restoring force. The first probe 30 extends in the up-down direction and has a lower end 31 and an upper end 32. The second probe 40 extends in the up-down direction and has a lower end 41 and an upper end 42. In the present embodiment, the upper end 32 of the first probe 30 and the upper end 42 of the second probe 40 are positioned upward of the probe fixing member 24. Further, the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 are positioned downward of the probe through member 23. In a state in which the first probe 30 and the second probe 40 do not contact the inspection object, the lower end 31 of the first probe 30 is positioned downward of the lower end 41 of the second probe 40. In other words, as shown in FIG. 1, the length LI from the opposing surface 21u to the lower end 31 of the first probe 30 (i.e., the length of the portion of the first probe 30 that protrudes from the opposing surface 21u) is greater than the length L2 from the opposing surface 21u to the lower end 41 of the second probe 40 (i.e., the length of the portion of the second probe 40 that protrudes from the opposing surface 21u). Figure 3

[0117] The lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 are pushed against the inspection object. The semiconductor laser device 80, which is the inspection object of the present embodiment, as shown in FIG. 2, has a submount 84 having an upper surface (not shown) and an element 82 disposed on the upper surface of the submount 84. The element 82 is a surface-emitting type semiconductor laser element to which a current is supplied. Although the element 82 is a surface-emitting type semiconductor laser element in the present embodiment, the element 82 can be a light-receiving type semiconductor laser element. Figure 3 Figure 3 ​​The first electrode is arranged on the upper surface of the sub-mount 84, the element 82 has an element upper surface, and the second electrode is arranged on the element upper surface. When a current is supplied for the purpose of inspecting the semiconductor laser device 80, the lower end 31 of the first probe 30 is brought into contact with the first electrode of the sub-mount 84, and the lower end 41 of the second probe 40 is brought into contact with the second electrode of the element 82. With respect to the height dl from the lower surface of the sub-mount 84 to the first electrode (i.e., the size in the up-down direction from the placement surface 70a of the stage 70 to the first electrode), the height d2 from the lower surface of the sub-mount 84 to the second electrode of the element 82 (i.e., the size in the up-down direction from the placement surface 70a of the stage 70 to the second electrode), and the length LI and the length L2 described above, the following inequalities hold.

[0118] L1 - L2 > d2 - dl (1)

[0119] Further, with respect to the height dl, the height d2, the length LI, the length L2, and the height H (the size in the up-down direction) of the height adjustment member 50, the following inequalities hold.

[0120] L1 + dl > H (2)

[0121] L2 + d2 > H (3)

[0122] The effects of the above relationships are described later.

[0123] By Figure 5 and Figure 6 The elastic restoring force of the first probe 30 and the second probe 40 is described. Figure 5 is a schematic cross-sectional view showing the shape of the first probe 30 of the present embodiment in a state in which the lower end 31 of the first probe 30 is not subjected to a force upward. Figure 6 is a schematic cross-sectional view showing the shape of the first probe 30 of the present embodiment in a state in which the lower end 31 of the first probe 30 is subjected to a force upward.

[0124] As Figure 5 shown in FIG. 6, the first probe 30 of the present embodiment extends in a straight line shape in the up-down direction in a state in which the lower end 31 is not subjected to a force upward.

[0125] On the other hand, in a case in which the lower end 31 is subjected to a force upward, the portion of the first probe 30 including the lower end 31 moves upward, and the portion of the first probe 30 located in the hollow portion 21v bends. In this way, the first probe 30 exhibits a buckling phenomenon. That is, in a case in which the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 are subjected to a force upward, the first probe 30 deforms in a direction intersecting the up-down direction.

[0126] Furthermore, if the upward force acting on the lower end 31 is released, then as Figure 5 As shown, the first probe 30 returns to its original shape. Thus, the first probe 30 possesses an elastic restoring force. Here, if we represent the elastic restoring force of the first probe 30 as F1, the spring constant of the first probe 30 as k1, and the displacement of the lower end 31 of the first probe 30 as Lx1, then the following equation holds true.

[0127] F1=k1·Lx1 (4)

[0128] In this embodiment, the second probe 40 also exhibits the same buckling phenomenon as the first probe 30. Furthermore, if the elastic restoring force of the second probe 40 is represented by F2, the spring constant of the second probe 40 is represented by k2, and the displacement of the lower end 41 of the second probe 40 is represented by Lx2, then the following formula holds.

[0129] F2=k2·Lx2 (5)

[0130] As described above, the first probe 30 and the second probe 40 have elastic restoring force. Furthermore, since the above inequalities (2) and (3) hold, when the height adjustment component 50 and the probe unit 20 are lowered until the worktable contact surface 50a of the height adjustment component 50 contacts the mounting surface 70a of the worktable 70, the displacement Lx1 of the lower end 31 of the first probe 30 and the displacement Lx2 of the lower end 41 of the second probe 40 are expressed by the following formulas.

[0131] Lx1=L1+d1-H>0 (6)

[0132] Lx2=L2+d2-H>0 (7)

[0133] Thus, due to the displacement of the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40, the elastic restoring force expressed by equations (4) and (5) above can be applied to the semiconductor laser device 80. That is, the elastic restoring force expressed by equations (4) and (5) above can be used to push each probe relative to the contact surface of each probe of the semiconductor laser device 80 in the vertical direction. As a result, no horizontal force is applied to the contact surface, so the horizontal positional displacement of each probe on the surface of the semiconductor laser device can be suppressed.

[0134] As described above, the worktable 70 is a component having a mounting surface 70a for placing the object to be inspected. In this embodiment, the mounting surface 70a is as follows: Figure 4As shown, the worktable inclined surface 70s is inclined with respect to the vertical direction. The worktable inclined surface 70s is lowered as it approaches the end of the placement surface 70a. In this way, the placement surface 70a has the worktable inclined surface 70s, so that in a case where the measurement device 90 is brought close to the probe unit 20, it is possible to reduce physical interference of the measurement device 90 with the worktable 70. Further, in a case where a light emitting element such as a semiconductor laser element is used as the inspection object, by providing the worktable inclined surface 70s at a portion of the placement surface 70a that opposes the propagation path of light, it is possible to reduce the case where light is blocked by the placement surface 70a. In the present embodiment, the worktable inclined surface 70s can be a light reflection suppressing surface. As the light reflection suppressing surface, for example, a black surface, a rough surface, or the like can be used similarly to the through member inclined surface 21s.

[0135] [1-3. Inspection method]

[0136] Using Figures 7-21 The inspection method of the present embodiment will be described. Figure 7 、 Figure 8 、 Figures 17-21 is a schematic side view that illustrates each process of the inspection method of the present embodiment. Figures 9-12 is a schematic plan view that illustrates each process of the first position adjustment method of the inspection object in the inspection method of the present embodiment. Figures 13-16 is a schematic plan view that illustrates each process of the second position adjustment method of the inspection object in the inspection method of the present embodiment.

[0137] The inspection method of the present embodiment is a method of inspecting the characteristics of an inspection object by supplying a current to the inspection object. In the present embodiment, the inspection is performed using the inspection device 10. As an example of the inspection object, an example of performing inspection of a semiconductor laser device 80 will be described below.

[0138] First, as shown in Figure 7 , the inspection object is placed in the inspection device 10. Specifically, as shown in Figure 8 , the semiconductor laser device 80 as the inspection object is placed on the placement surface 70a of the worktable 70 provided in the inspection device 10. For movement of the semiconductor laser device 80, for example, a gripper or the like can be used. The semiconductor laser device 80 is disposed on the suction hole 72 of the placement surface 70a. In addition, when the semiconductor laser device 80 is placed in the inspection device 10, the probe unit 20 or the like is evacuated to an evacuation position above the worktable 70 so as not to become an obstacle to the placement.

[0139] Next, by Figure 8The position adjustment of the semiconductor laser device 80 arranged on the placement surface 70a is performed as shown, and the semiconductor laser device 80 is arranged at a prescribed position. The method of position adjustment is not particularly limited, and a first position adjustment method and a second position adjustment method will be described below as examples of the method of position adjustment.

[0140] Using Figures 9-12 The first position adjustment method will be described. In the first position adjustment method, first, the frame Fm is arranged on the placement surface 70a of the table 70 in a state in which the semiconductor laser device 80 is adsorbed with the adsorption hole 72, as shown. Figure 9 The frame Fm is arranged at a position corresponding to the prescribed position (i.e., the target position of the position adjustment) of the semiconductor laser device 80. In the present embodiment, the frame Fm is arranged on the placement surface 70a of the table 70 in such a manner that the semiconductor laser device 80 is positioned inside the rectangular ring-shaped frame Fm.

[0141] The frame Fm is formed with a through hole, and the semiconductor laser device 80 is pushed in the negative direction of the X-axis direction by a push rod Pm that passes through the through hole. At this time, the position of the frame Fm is fixed so as not to move relative to the placement surface 70a. As a result, as shown, Figure 10 the semiconductor laser device 80 is pushed against the inner wall on the negative side of the X-axis direction of the frame Fm, and thus the position of the semiconductor laser device 80 in the X-axis direction is adjusted to the position defined by the inner wall of the frame Fm. In addition, in Figure 10 , the position of the semiconductor laser device 80 before movement is indicated by a broken line.

[0142] Next, as shown, Figure 11 the semiconductor laser device 80 is pushed in the positive direction of the Y-axis direction by a push rod Pm that passes through another through hole formed in the frame Fm. At this time, the position of the frame Fm is fixed so as not to move relative to the placement surface 70a. As a result, as shown, Figure 12 the semiconductor laser device 80 is pushed against the inner wall on the positive side of the Y-axis direction of the frame Fm, and thus the position of the semiconductor laser device 80 in the Y-axis direction is adjusted to the position defined by the inner wall of the frame Fm. In addition, in Figure 12 , the position of the semiconductor laser device 80 before movement is indicated by a broken line.

[0143] As described above, by pushing the semiconductor laser device 80 against the inner wall of the frame Fm in a state in which the position of the inner wall of the frame Fm coincides with the prescribed position of the semiconductor laser device 80, the position adjustment of the semiconductor laser device 80 can be performed. In order to smoothly perform these position adjustments, the placement surface 70a is preferably a smooth surface.

[0144] Next, using Figures 13-16The second position adjustment method will be explained. In the second position adjustment method, firstly, with the semiconductor laser device 80 adsorbed through the adsorption hole 72, as follows... Figure 13 As shown, the frame Fm is positioned on the mounting surface 70a of the stage 70. The frame Fm is positioned on the mounting surface 70a of the stage 70 such that the semiconductor laser device 80 is located inside the rectangular annular frame Fm. Furthermore, in Figure 13 The dashed line indicates the designated position of the semiconductor laser device 80 (i.e., the target position for position adjustment). Next, as in... Figure 13 As indicated by the arrow, the frame Fm is moved in the positive X-axis direction. At this time, the inner wall of the frame Fm pushes the semiconductor laser device 80 in the positive X-axis direction, thus... Figure 14 As shown, the semiconductor laser device 80 is moved in the positive X-axis direction. Additionally, in Figure 14 The dashed lines in the diagram indicate the positions of the frame Fm and the semiconductor laser device 80 before they were moved.

[0145] Next, as in Figure 15 As indicated by the arrow, the frame Fm is moved in the positive Y-axis direction. At this time, the inner wall of the frame Fm pushes the semiconductor laser device 80 in the positive Y-axis direction, thus... Figure 16 As shown, the semiconductor laser device 80 is moved in the positive Y-axis direction. Additionally, in Figure 16 The dashed lines in the diagram indicate the positions of the frame Fm and the semiconductor laser device 80 before they were moved.

[0146] As described above, the position of the semiconductor laser device 80 can be adjusted by pressing it against the inner wall of the frame Fm. Furthermore, according to the second position adjustment method, when adjusting the position of the semiconductor laser device 80, continuous position adjustment in both the X and Y axes can be performed using only one tool, the frame Fm. Therefore, the time required for position adjustment can be reduced.

[0147] When using this first position adjustment method, the worktable 70 of the inspection device 10 has an adsorption hole 72 for adsorbing the object to be inspected. The inspection device 10 has a frame Fm that surrounds the object to be inspected adsorbed on the worktable 70. The inspection device 10 adjusts the position of the object to be inspected by moving the frame Fm.

[0148] After the position of the semiconductor laser device 80 is adjusted, as follows: Figure 17 As shown, the probe unit 20 is moved from the retracted position upwards toward the worktable 70. In this embodiment, the probe unit 20 is moved upwards toward the worktable 70 by moving the unit moving member 16 in the negative Y-axis direction.

[0149] Next, asFigure 18 As shown, the first probe 30 and the second probe 40 (not shown in the figure) of the probe unit 20 are brought into contact with the semiconductor laser device 80 by lowering the probe unit 20. In the present embodiment, the worktable contact surface 50a of the height adjustment member 50 is pushed against the placement surface 70a of the worktable 70 by lowering the up-and-down moving member 14. In turn, the first probe 30 and the second probe 40 of the probe unit 20 are pushed against the first electrode and the second electrode of the semiconductor laser device 80, respectively. By connecting the unit support member 19 of the inspection device 10 to the unit moving member 16 with the slide rail 17 and the connecting spring 18, the force for fixing the probe unit 20 to the worktable 70 can be easily maintained while maintaining the positional relationship between the probe unit 20 and the worktable 70, as described above. Details of the operation of the probe unit 20 in this process are described later. Figure 18

[0150] In the state shown, the characteristics of the semiconductor laser device 80 are inspected by supplying current to the semiconductor laser device 80 via the first probe 30 and the second probe 40. In the inspection, a measuring device or the like that measures the power of light emitted from the semiconductor laser device 80 is used, for example. Figure 18

[0151] Next, as shown, the first probe 30 and the second probe 40 (not shown in the figure) are separated from the semiconductor laser device 80 by raising the probe unit 20. In the present embodiment, the probe unit 20 and the height adjustment member 50 are raised by raising the up-and-down moving member 14. In turn, the first probe 30 and the second probe 40 of the probe unit 20 are separated from the first electrode and the second electrode of the semiconductor laser device 80, respectively. Figure 19 Figure 19

[0152] Next, as shown, the probe unit 20 is moved from the upward direction of the worktable 70 to a retreat position. In the present embodiment, the probe unit 20 is retreated by moving the unit moving member 16 in the positive direction of the Y-axis. Figure 20

[0153] Next, as shown, the semiconductor laser device 80 is discharged from the inspection device 10. That is, the semiconductor laser device 80 is moved from the placement surface 70a of the worktable 70 of the inspection device 10 to the outside of the inspection device 10. For the discharge of the semiconductor laser device 80, a vacuum gripper or the like can be used in a state where the suction by the suction hole is stopped, for example. Figure 21

[0154] As described above, the inspection of the semiconductor laser device 80 as the inspection object can be performed.

[0155] [1-4. Operation of probe unit]​​​​​​

[0156] Using Figures 22-28 The operation of the probe unit 20 in the inspection method of the present embodiment will be described. Figures 22-28 is a schematic cross-sectional view for illustrating the operation of the probe unit 20 of the present embodiment. In Figure 22 , Figure 25 and Figure 28 , the state of the probe unit 20 in the processes indicated by Figure 17 , Figure 18 and Figure 19 of the above-described inspection method is shown. In Figures 22-25 , the state of the probe unit 20 from the process shown in Figure 17 to the process shown in Figure 18 is shown. In Figures 25-28 , the state of the probe unit 20 from the process shown in Figure 18 to the process shown in Figure 19 is shown.

[0157] In the process shown in Figure 17 , as shown in Figure 22 , the probe unit 20 is located above the work table 70, and the first probe 30 and the second probe 40 are not in contact with the semiconductor laser device 80. Further, the height adjustment member 50 is not in contact with the work table 70.

[0158] Next, by gradually lowering the probe unit 20, as shown in Figure 23 , the first probe 30 is brought into contact with a first electrode (not shown in Figure 23 ) arranged on the upper surface of the sub-assembly 84 of the semiconductor laser device 80 (first contact process). In this state, the second probe 40 is not in contact with a second electrode arranged on the upper surface of the element 82 of the semiconductor laser device 80. Further, the height adjustment member 50 is not in contact with the placement surface 70a of the work table 70.

[0159] After the first contact process, by further gradually lowering the probe unit 20 in the state where the first probe 30 is in contact with the first electrode, as shown in Figure 24 , the second probe 40 is brought into contact with a second electrode (not shown in Figure 24 ) arranged on the upper surface of the element 82 of the semiconductor laser device 80 (second contact process). At this time, the lower end 31 of the first probe 30 is displaced upward with respect to the probe through member 23. In conjunction therewith, as shown in Figure 24As shown, the first probe 30 bends within the cavity 21v. That is, the first probe 30 exhibits a buckling phenomenon. The lower end 31 of the first probe 30 pushes the first electrode toward the stage 70 with an elastic restoring force expressed by equation (4). Although the first probe 30 undergoes buckling, the portion of the first probe 30 protruding downward from the opposing surface 21u continues to remain perpendicular to the contact surface of the semiconductor laser.

[0160] Next, with the first probe 30 and the second probe 40 in contact with the first electrode and the second electrode respectively, the probe unit 20 is further lowered, pushing the worktable contact surface 50a of the height adjustment component 50 against the mounting surface 70a of the worktable 70. At this time, since the lower end 31 of the first probe 30 is further displaced upward relative to the probe penetration component 23, the elastic restoring force corresponding to the displacement of the lower end 31 becomes greater. That is, the force by which the lower end 31 of the first probe 30 pushes the first electrode toward the worktable 70 becomes stronger. In addition, the lower end 41 of the second probe 40 is displaced upward relative to the probe penetration component 23. Subsequently, as Figure 25 As shown, the second probe 40 bends within the cavity 21v. That is, the second probe 40 exhibits a buckling phenomenon. The lower end 41 of the second probe 40 pushes the second electrode toward the stage 70 with an elastic restoring force expressed by equation (5). Although the second probe 40 undergoes buckling, the portion of the second probe 40 protruding downward from the opposing surface 21u continues to remain perpendicular to the contact surface of the semiconductor laser.

[0161] In such Figure 25 With the first probe 30 in contact with the first electrode and the second probe 40 in contact with the second electrode as shown, current is supplied to the semiconductor laser device 80, which is to be inspected (supply process). By supplying current to the semiconductor laser device 80 via the first probe 30 and the second probe 40, the characteristics of the semiconductor laser device 80 are inspected.

[0162] After the supply process, the probe unit 20 is gradually raised, such as... Figure 26 As shown, the worktable contact surface 50a of the height adjustment component 50 is moved away from the mounting surface 70a of the worktable 70.

[0163] Next, by gradually raising the probe unit 20 further, such as... Figure 27 As shown, the second probe 40 is removed from the second electrode (second disengagement process). Here, the second probe 40 returns to its state before buckling by elastic restoring force.

[0164] Next, by gradually raising the probe unit 20 further, such as... Figure 28The first probe 30 is caused to move away from the first electrode (first separation process) as shown. Here, the first probe 30 returns to a state before the buckling phenomenon occurs by the elastic restoring force.

[0165] As described above, the probe unit 20 can be used to perform inspection of an inspection target.

[0166] [1-5. Effects, etc.]

[0167] Effects of the probe unit 20, the inspection apparatus 10, and the inspection method according to the present embodiment will be described.

[0168] The probe unit 20 according to the present embodiment includes a part of a current circuit that supplies a current to an inspection target. The probe unit 20 includes: first and second probes 30 and 40 included in the current circuit and having an elastic restoring force; a probe fixing member 24 that fixes the first and second probes 30 and 40; and a probe passing member 23 disposed below the probe fixing member 24 away from the probe fixing member 24 and formed with first and second passing holes 26a and 26b through which the first and second probes 30 and 40 pass, respectively. The probe passing member 23 has an opposing surface 21u through which the first and second probes 30 and 40 pass and that opposes the inspection target. The portions of the first and second probes 30 and 40 that protrude downward from the opposing surface are movable in the vertical direction. The lower end 31 of the first probe 30 is lower than the lower end 41 of the second probe 40 in a state in which the first and second probes 30 and 40 do not contact the inspection target.

[0169] Thus, as the inspection target, for example, a semiconductor laser device 80 is used, and in a case in which the probe unit 20 is caused to approach the semiconductor laser device 80, the lower end 31 of the first probe 30 can be caused to contact the first electrode, which is lower than the second electrode, first and push against the placement surface 70a.

[0170] In the present embodiment, formula (1) is satisfied. That is, the semiconductor laser device 80 has a first electrode which is contacted by the lower end 31 of the first probe 30, and a second electrode which is contacted by the lower end 41 of the second probe 40. The first electrode is lower than the second electrode, and the positional difference in the vertical direction between the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 is larger than the positional difference in the vertical direction between the first electrode and the second electrode. Therefore, in a case where the probe unit 20 is caused to approach the semiconductor laser device 80, the first probe 30 can be reliably brought into contact with the first electrode before the second probe 40 is brought into contact with the second electrode. Here, the portion of low height (the first electrode) in the semiconductor laser device 80 is pushed against the placement surface 70a before the portion of high height (the second electrode), and this can reduce the possibility of the semiconductor laser device 80 toppling (i.e., rolling over) as compared with a case where the portion of high height is pushed against the placement surface 70a first. Thus, it is possible to reduce the case where the semiconductor laser device 80 is damaged by toppling at the time of inspection.

[0171] Further, in a case where formula (1) is satisfied, in the feeding process, the displacement of the lower end 41 of the second probe 40 with respect to the probe through member 23 can be made smaller than the displacement of the lower end 31 of the first probe 30 with respect to the probe through member 23. Therefore, it is easy to make the force with which the lower end 41 of the second probe 40 pushes against the second electrode lower than the force with which the lower end 31 of the first probe 30 pushes against the first electrode. Thus, it is possible to suppress the case where the second electrode forms a probe mark (i.e., a dent). In particular, as the second electrode of the element 82 of the semiconductor laser device 80, there is a case where Au which is relatively soft is used. In this case, the second electrode is likely to form a probe mark, and therefore the probe unit 20 of the present embodiment is particularly effective.

[0172] Further, in a case where formula (1) is satisfied, as described above, after the feeding process, the first probe 30 can be caused to be separated from the first electrode after the second probe 40 is separated from the second electrode. Thereby, at the time of separation of the second probe 40 from the second electrode, since the first probe 30 pushes against the first electrode, it is possible to reduce the case where the semiconductor laser device 80 is lifted together with the second probe 40. Thus, it is possible to reduce the case where the semiconductor laser device 80 is damaged by falling after being lifted. In particular, as described above, there is a case where Au which is relatively soft is used as the second electrode, and in this case, the lower end 41 of the second probe 40 is likely to sink into the second electrode and cause the second probe 40 to stick to the second electrode. Therefore, at the time of separation of the second probe 40 from the second electrode, the semiconductor laser device 80 is likely to be lifted. Thus, the probe unit 20 of the present embodiment is particularly effective.

[0173] The first probe 30 and the second probe 40 of the probe unit 20 of the present embodiment can exhibit a buckling phenomenon.

[0174] UseFigure 29 and Figure 30 The effects of such first probe 30 and second probe 40 are described. Figure 29 is a schematic view showing the positional relationship between the first probe 30 of the present embodiment and the first through-hole 26a in a case where the first probe 30 does not exhibit the buckling phenomenon. Figure 30 is a schematic view showing the positional relationship between the first probe 30 of the present embodiment and the first through-hole 26a in a case where the first probe 30 exhibits the buckling phenomenon. In Figure 29 and Figure 30 In (a) and (b) and (c), a cross-sectional view (a) of the first through-hole 26a and the first probe 30, and a plan view (b) and a bottom view (c) of the first through-hole 26a are shown.

[0175] As shown in Figure 29 , in a case where the first probe 30 does not exhibit the buckling phenomenon, the first probe 30 is not pushed by the inner wall surrounding the first through-hole 26a, so it can move freely within the first through-hole 26a. That is, as the probe unit 20 vibrates, the first probe 30 near the through-hole also vibrates. On the other hand, as shown in Figure 30 , in a case where the first probe 30 exhibits the buckling phenomenon, since it is offset in a direction perpendicular to the up-down direction, at the positions of the upper surface and the lower surface of the probe through member 23, the first probe 30 is pushed by the inner wall surrounding the first through-hole 26a. In this case, the movement of the first probe 30 is restricted by the frictional force between the first probe 30 and the inner wall surrounding the first through-hole 26a. Thus, the vibration of the first probe 30 can be suppressed. For example, a case is described where the probe unit 20 and the worktable 70 on which the inspection object is placed are moved in a state where the first probe 30 and the second probe 40 are pushed against the inspection object. In this case, if the first probe 30 and the second probe 40 exhibit the buckling phenomenon, even if a force that vibrates the first probe 30 and the second probe 40 is applied by moving the probe unit 20 and the worktable 70 on which the inspection object is placed, the vibration of the first probe 30 and the second probe 40 near the through-holes can be suppressed by the above-described frictional force. Thus, the case where the inspection object is damaged due to the vibration of each probe can be suppressed.

[0176] The opposing surface 21u of the probe unit 20 of the present embodiment can have a through member inclined surface 21s inclined with respect to the up-down direction. The through member inclined surface 21s rises as it moves away from the first through-hole 26a and the second through-hole 26b.

[0177] By so making the opposing surface 21u have the through member inclined surface 21s, in a case where the measurement device 90 is caused to approach the probe unit 20, it is possible to reduce physical interference of the measurement device 90 with the probe unit 20. Further, in a case where a light emitting element such as a semiconductor laser element is used as the inspection object, by disposing the through member inclined surface 21s at a portion of the opposing surface 21u that opposes the propagation path of light, it is possible to reduce cases where light is blocked by the opposing surface 21u.

[0178] The through member inclined surface 21s of the present embodiment can be a light reflection suppressing surface.

[0179] By so doing, in the through member inclined surface 21s, it is possible to suppress cases where light from the inspection object is diffusely reflected to become noise in light measurement.

[0180] The inspection device 10 of the present embodiment is provided with the probe unit 20, a work table 70 having a placement surface 70a on which the inspection object is placed, and a height adjustment member 50 disposed between the probe unit 20 and the work table 70.

[0181] In such an inspection device 10, the height adjustment member 50 is able to function as a spacer that specifies the minimum interval of the probe unit 20 and the work table 70. Thus, even in a case where the positional control precision of a mechanism that drives the probe unit 20 of the inspection device 10 is low, it is possible to precisely control the interval of the probe unit 20 and the work table 70 by the height adjustment member 50. Thus, it is possible to suppress cases where the probe unit 20 and the work table 70 are brought too close to each other, and excessive stress is applied to the inspection object, thereby damaging the inspection object.

[0182] Further, by pushing the height adjustment member 50 against the placement surface 70a of the work table 70, it is possible to suppress vibration of the probe unit 20. Thus, it is possible to suppress cases where the inspection object is damaged by each probe as a result of vibration of each probe.

[0183] The height adjustment member 50 of the present embodiment can be disposed at the opposing surface 21u of the probe unit 20. By so doing, it is possible to cause the height adjustment member 50 to retreat together with the probe unit 20. Thus, when the inspection object is placed on the placement surface 70a of the work table 70, it is possible to reduce physical interference of the height adjustment member 50 with a gripper or the like that is used to move the inspection object.

[0184] The placement surface 70a of the work table 70 of the present embodiment can have a work table inclined surface 70s that is inclined with respect to the up-down direction. The work table inclined surface 70s is lowered as it approaches an end portion of the placement surface 70a.

[0185] By thus providing the placement surface 70a with the stage inclined surface 70s, in a case where the measurement device 90 is caused to approach the probe unit 20, it is possible to reduce physical interference of the measurement device 90 with the stage 70. Further, in a case where a light emitting element such as a semiconductor laser element is used as the inspection target, by providing the stage inclined surface 70s at a portion of the placement surface 70a that opposes the propagation path of the light, it is possible to reduce the case where the light is blocked by the placement surface 70a.

[0186] The stage inclined surface 70s of the present embodiment can be a light reflection suppressing surface.

[0187] By thus providing the stage inclined surface 70s, it is possible to suppress the case where the light from the inspection target is diffusely reflected and becomes noise in the light measurement.

[0188] In the inspection device 10 of the present embodiment, the stage 70 can have a suction hole 72 that suctions the inspection target. Further, the inspection device 10 can be provided with a frame Fm that encloses the inspection target suctioned to the stage 70. The inspection device 10 adjusts the position of the inspection target by moving the frame Fm.

[0189] By thus performing the position adjustment of the inspection target using only the frame Fm as one tool, it is possible to continuously perform the position adjustment in the X-axis direction and the Y-axis direction. Thus, it is possible to reduce the time required for the position adjustment.

[0190] The inspection method of the present embodiment is an inspection method that inspects the characteristics of an inspection target by supplying a current to the inspection target. A semiconductor laser device 80 that is an example of the inspection target is provided with a sub-assembly 84 having an upper surface, and an element 82 having an element upper surface, disposed on the upper surface of the sub-assembly 84, to which a current is supplied. The sub-assembly 84 has a first electrode disposed on the upper surface, and the element 82 has a second electrode disposed on the element upper surface. The inspection method includes a first contact process that brings a first probe 30 into contact with the first electrode, and a second contact process that, after the first contact process, brings a second probe 40 into contact with the second electrode in a state where the first probe 30 is in contact with the first electrode. The first probe 30 and the second probe 40 are included in a current circuit that supplies a current to the inspection target, and have an elastic restoring force.

[0191] With such an inspection method, the first probe 30 can be reliably brought into contact with the first electrode before the second probe 40 comes into contact with the second electrode. Here, the low-height portion (the first electrode) in the inspection object is pushed against the placement surface 70a before the high-height portion (the second electrode), which can reduce the likelihood of the inspection object toppling over, as compared with the case where the high-height portion is pushed against the placement surface 70a first. Thus, the case where the inspection object is damaged by toppling over during inspection can be reduced. The inspection method of the present embodiment can be implemented, for example, using the inspection device 10 described above.

[0192] Another inspection method of the present embodiment is an inspection method of inspecting the characteristics of an inspection object by supplying a current to the inspection object. A semiconductor laser device 80, which is an example of an inspection object, includes a submount 84 having an upper surface and a device 82 having a device upper surface, which is disposed on the upper surface of the submount 84 and to which a current is supplied. The submount 84 has a first electrode disposed on the upper surface, and the device 82 has a second electrode disposed on the device upper surface. The inspection method includes a supplying step of supplying a current to the inspection object while the first probe 30 is in contact with the first electrode and the second probe 40 is in contact with the second electrode, a second detachment step of detaching the second probe 40 from the second electrode after the supplying step, and a first detachment step of detaching the first probe 30 from the first electrode after the second detachment step. The first probe 30 and the second probe 40 are included in a current circuit that supplies a current to the inspection object, and have elastic restoring forces.

[0193] With such an inspection method, when the second probe 40 is detached from the second electrode, the first electrode is pushed by the first probe 30, so the inspection object is less likely to be lifted together with the second probe 40. Thus, the inspection object is less likely to be damaged by falling after being lifted. In particular, as described above, there are cases where relatively soft Au is used as the second electrode, in which case the second probe 40 sinks into the second electrode, so the second probe 40 and the second electrode are likely to stick together. Thus, when the second probe 40 is detached from the second electrode, the inspection object is likely to be lifted. Thus, the inspection method of the present embodiment is particularly effective. The inspection method of the present embodiment can be implemented, for example, using the inspection device 10 described above.

[0194] [1-6. Inspection system]

[0195] Using Figure 31 and Figure 32 An inspection system of the present embodiment, which includes the inspection device 10, will be described. Figure 31 is a schematic plan view that shows the overall structure of the inspection system 1 of the present embodiment. Figure 32 is a schematic plan view that shows the overall structure of the inspection system 1a of the modification of the present embodiment. InFigure 31 and Figure 32 The document also shows the measuring device 90 used in the inspection and the semiconductor laser device 80, which is an example of the object of inspection.

[0196] like Figure 31 As shown, the inspection system 1 of this embodiment includes an inspection device 10 and a conveying device 5 for conveying the inspection device 10.

[0197] exist Figure 31 In the example shown, the conveying device 5 has a circular shape and is a turntable that rotates around a central axis, conveying the inspection device 10 disposed on the conveying device 5 in the circumferential direction.

[0198] Inspection system 1 has multiple inspection devices 10. Figure 31 In the example shown, in inspection system 1, 12 inspection devices 10 are arranged in a circular shape along the circular end edge of conveying device 5. In this embodiment, the inspection devices 10 are arranged at 30-degree central angles on a circumference of approximately 300 mm in radius. The average moving speed of the inspection devices 10 is, for example, approximately 200 mm / s, and the time required for moving at a 30-degree central angle is, for example, approximately 0.8 seconds.

[0199] The inspection device 10 performs each step of the above-described inspection method according to the location of the destination to which the conveying device 5 is transported. That is, the inspection device 10 first inspects the destination of the conveyed device 5. Figure 31 The conveyor 5 stops at the 5 o'clock position, and the object to be inspected is placed in. Next, the inspection device 10 is conveyed counter-clockwise to the 4 o'clock position of the conveyor 5 and then stops to adjust the position of the object to be inspected. Next, the inspection device 10 is conveyed counter-clockwise to the 3 o'clock position of the conveyor 5 and then stops, moving the probe unit 20. Here, the first probe 30 and the second probe 40 are brought into contact with the object to be inspected. Next, the inspection device 10, with the first probe 30 and the second probe 40 in contact with the object to be inspected, is conveyed counter-clockwise to the 2 o'clock position of the conveyor 5 and then stops. A prescribed current is supplied to the object to be inspected, and its characteristics are measured (i.e., inspected). The current supply is then stopped. Next, the inspection device 10, with the first probe 30 and the second probe 40 in contact with the object to be inspected, repeatedly conveys and stops counter-clockwise from the 1 o'clock position to the 8 o'clock position of the conveyor 5, and inspects the object to be inspected each time it stops. Figure 31 In the example shown, seven checks are performed. These checks can be separate and different, or the same check can be performed multiple times. For example, in each check, the magnitude of the current and voltage supplied to the object being checked, or the waveform of the current, can be changed. Figure 31 The illustration is omitted, but measuring devices are configured at multiple inspection locations to measure the objects being inspected.

[0200] Next, the inspection device 10 is stopped after being transported counterclockwise to the 7 o'clock position of the transport device 5 with the first probe 30 and the second probe 40 in contact with the inspection object, and the probe unit 20 is retracted. Next, the inspection device 10 is stopped after being transported counterclockwise to the 6 o'clock position of the transport device 5, and the inspection object is discharged.

[0201] By performing such inspection in the 12 inspection devices 10 respectively, inspection of 7 inspection objects can be performed at the same time, so the time required for inspection of a large number of inspection objects can be shortened.

[0202] Further, the inspection device 10 of the present embodiment transports the inspection device 10 with the first probe 30 and the second probe 40 in contact with the inspection object. Therefore, when a plurality of inspections are performed at different positions, movement and retraction of the probe unit 20 are not required each time the inspection device 10 is moved. Movement and retraction of the probe unit 20 are particularly time-consuming processes in each process of the inspection. For example, the distance that the probe unit 20 moves in the horizontal direction is about 100 mm, and about 0.8 seconds are required for the movement. That is, the average movement speed is about 125 mm / sec. Further, the probe unit 20 can stand by after movement in the horizontal direction until vibration of the probe unit 20 stops. By moving in the vertical direction after the vibration stops, the probe marks formed on the inspection object by the first probe 30 and the second probe 40 can be reduced. Furthermore, about 0.8 seconds are required for movement of the probe unit 20 in the vertical direction. In this way, by reducing the number of times of movement and retraction of the probe unit 20, which requires a relatively long time, a large reduction in the inspection time can be achieved.

[0203] Further, in the present embodiment, since the number of times of contact and separation of the first probe 30 and the second probe 40 with respect to the inspection object can be reduced, the probe marks formed on the inspection object can be reduced.

[0204] The inspection device 10 of the present embodiment is provided with the height adjustment member 50 disposed between the probe unit 20 and the worktable 70. Thereby, when the first probe 30 and the second probe 40 are brought into contact with the inspection object, the height adjustment member 50 can be pressed against the placement surface 70a of the worktable 70. Thus, when the inspection device 10 is transported, vibration of the probe unit 20, the first probe 30, and the second probe 40 can be suppressed by the frictional force between the height adjustment member 50 and the placement surface 70a. Thereby, the first probe 30 and the second probe 40 can be suppressed from vibrating and damaging the inspection object.

[0205] Further, in the present embodiment, as described above, the table contact surface 50a of the height adjustment member 50 is a rough surface, so the friction between the table contact surface 50a and the placement surface 70a of the table 70 can be increased. Thus, the case where the probe unit 20 vibrates with respect to the table 70 when the inspection apparatus 10 is transported can be further suppressed, and the case where the first probe 30 and the second probe 40 vibrate with respect to the inspection object can be further suppressed.

[0206] Further, the plurality of inspection apparatuses 10 of the present embodiment are arranged in a circle as shown in FIG. 1, and the probe units 20 are arranged in a circle as shown in FIG. 2. Thus, the inspection apparatuses 10 can be arranged in a circle, and the probe units 20 can be arranged in a circle. Therefore, the inspection apparatuses 10 and the probe units 20 can be arranged in a circle, and the inspection apparatuses 10 and the probe units 20 can be arranged in a circle. Thus, the inspection apparatuses 10 and the probe units 20 can be arranged in a circle, and the inspection apparatuses 10 and the probe units 20 can be arranged in a circle. Figure 31 Further, the plurality of inspection apparatuses 10 of the present embodiment are arranged in a circle as shown in FIG. 1, and the probe units 20 are arranged in a circle as shown in FIG. 2. Thus, the inspection apparatuses 10 can be arranged in a circle, and the probe units 20 can be arranged in a circle. Therefore, the inspection apparatuses 10 and the probe units 20 can be arranged in a circle, and the inspection apparatuses 10 and the probe units 20 can be arranged in a circle. Thus, the inspection apparatuses 10 and the probe units 20 can be arranged in a circle, and the inspection apparatuses 10 and the probe units 20 can be arranged in a circle.

[0207] Next, a manufacturing method of a semiconductor laser device 80 of the present embodiment will be described. Figure 32 An inspection system la of a modification of the present embodiment will be described. As shown in FIG. 9, the inspection system la of the present modification is provided with an inspection apparatus 10 and a transport apparatus 5a that transports the inspection apparatus 10. The inspection system la of the present modification is also provided with a plurality of inspection apparatuses 10 as with the above-described inspection system 1. Figure 32 As shown in FIG. 9, the inspection system la of the present modification is provided with an inspection apparatus 10 and a transport apparatus 5a that transports the inspection apparatus 10. The inspection system la of the present modification is also provided with a plurality of inspection apparatuses 10 as with the above-described inspection system 1.

[0208] The transport apparatus 5a of the present modification is mainly different from the above-described transport apparatus 5 in the shape of the transport path. The transport apparatus 5a of the present modification has an oblong shape, and a plurality of inspection apparatuses 10 are arranged in the oblong shape along the circumference of the transport apparatus 5a. The plurality of inspection apparatuses 10 are transported along the oblong-shaped transport path. Thus, the transport apparatus 5a has a transport path that transports the inspection apparatus 10 in a straight line and a transport path that transports in a circular arc at the same time. The average moving speed of the inspection apparatus 10 is, for example, about 190 mm / sec, and the transport distance of one transport is, for example, 150 mm. The time required for one transport is, for example, about 0.8 sec.

[0209] In the inspection system la of the present modification, the inspection apparatus 10 is also transported in a state where the first probe 30 and the second probe 40 of the inspection apparatus 10 are in contact with the inspection object. Thus, the same effects as the above-described inspection system 1 are exerted in the inspection system la of the present modification as well.

[0210] [1-7. Manufacturing method of semiconductor laser device]

[0211] A manufacturing method of a semiconductor laser device 80 of the present embodiment will be described. Figure 33 A manufacturing method of a semiconductor laser device 80 of the present embodiment will be described.Figure 33 is a flowchart showing a flow of a manufacturing method of the semiconductor laser device 80 of the present embodiment.

[0212] As shown in Figure 33 , first, the semiconductor laser device 80 is assembled (S10). In the present embodiment, the semiconductor laser device 80 is provided with the sub-assembly 84 and the element 82. The element 82 is a semiconductor laser element. For example, the semiconductor laser device 80 is assembled by preparing the sub-assembly 84 and disposing the element 82 on the upper surface of the sub-assembly 84.

[0213] Next, the semiconductor laser device 80 is inspected (S20). In the manufacturing method of the semiconductor laser device 80 of the present embodiment, the semiconductor laser device 80 is inspected as an inspection object using the inspection method of the present embodiment.

[0214] As described above, the semiconductor laser device 80 of the present embodiment can be manufactured. According to the manufacturing method of the semiconductor laser device 80 of the present embodiment, by using the inspection method of the present embodiment, the same effects as the above-described inspection method are exerted, and damage to the semiconductor laser device 80 in inspection can be reduced.

[0215] [1-8. Modified example of probe unit]

[0216] A modified example of the probe unit of the present embodiment will be described.

[0217] [1-8-1. Modified example 1]

[0218] A modified example of the probe unit of the present embodiment will be described. Figure 34 is a schematic cross-sectional view showing a part of the probe unit of the present modified example. In Figure 34 , the structure of the first through-hole 26a of the probe through member 23 and its periphery is shown. Figure 34

[0219] As shown in Figure 34 , the probe unit of the present modified example is different from the above-described probe unit 20 in the structure of the first probe 130. The first probe 130 of the present modified example has the electrically conductive body 36 and the insulating film 38.

[0220] The electrically conductive body 36 is an electrically conductive member having elastic restoring force. The electrically conductive body 36 is, for example, a metal wire. The electrically conductive body 36 is fixed by the probe fixing member 24 to pass through the probe through member 23, like the above-described first probe 30.

[0221] ​The insulating film 38 is an electrically insulating film that covers a portion of the electrically conductive body 36. In the present modification example, the insulating film 38 covers a portion of the electrically conductive body 36 that is above the probe through member 23 in a state in which the lower end 131 of the first probe 130 does not contact the inspection object. The insulating film 38 can also cover a portion of the electrically conductive body 36 that is located in the hollow 21v in a state in which the lower end 131 of the first probe 130 does not contact the inspection object. As shown in FIG. 33, the diameter of the first probe 130 in the portion covered by the insulating film 38 can be larger than the diameter of the first through-hole 26a. Thus, the insulating film 38 can suppress the first probe 130 from falling downward from the first through-hole 26a. Figure 34

[0222] In addition, the second probe can also have an electrically conductive body and an insulating film, like the first probe 130.

[0223] [1-8-2. Modification Example 2]

[0224] The probe unit of Modification Example 2 of the present embodiment will be described. Figure 35 is a schematic cross-sectional view that shows a portion of the probe unit of the present modification example. Figure 35

[0225] The probe unit of the present modification example differs from the probe unit of Modification Example 1 in the structure of the probe through member 123.

[0226] In the probe through member 123 of the present modification example, the first through-hole 126a is formed. The probe through member 123 has a plurality of guide members 123a, 123c, 123e that are arranged in the up-down direction so as to be apart from each other. In each of the plurality of guide members 123a, 123c, 123e, the first guide hole through which the first probe 130 passes is formed. As shown in FIG. 34, in the guide member 123a, the first guide hole 126aa is formed. In addition, in the guide member 123c arranged below the guide member 123a, the first guide hole 126ca is formed. In addition, in the guide member 123e arranged below the guide member 123c, the first guide hole 126ea is formed. In the present modification example, each of the guide members is formed of an electrically insulating material. Each of the guide members can use, for example, an aromatic polyester, nylon, teflon (registered trademark), a fluororesin such as polytetrafluoroethylene, or a ceramic, or the like. In a case in which an insulating film is formed in a portion of the first probe 130 that contacts each of the guide members, an electrically conductive member such as a metal can be used as each of the guide members. Figure 35

[0227] ​​​In this modification, a spacer is arranged between two adjacent guide members. A spacer 123b is arranged between the guide member 123a and the guide member 123c. A spacer 123d is arranged between the guide member 123c and the guide member 123e.

[0228] In the spacer 123b, a first spacer hole 126ba is formed. In the spacer 123d, a first spacer hole 126da is formed.

[0229] The first through-hole 126a of the probe through member 123 includes the first guide holes 126aa, 126ca, 126ea and the first spacer holes 126ba, 126da. That is, the first probe 130 passes through the first guide holes 126aa, 126ca, 126ea and the first spacer holes 126ba, 126da. The centers of the first guide holes 126aa, 126ca, 126ea are at the same position in the horizontal direction (i.e., the same position in the XY plane), and the first probe 130 passing through is perpendicular with respect to the bottom surface of the probe through member 123.

[0230] The diameters of the first spacer holes 126ba, 126da are larger than the diameters of the first guide holes 126aa, 126ca, 126ea. Thus, the first probe 130 is guided by the first guide holes 126aa, 126ca, 126ea. Here, by making the thickness of each guide member smaller than the thickness of each spacer, the area of the first probe 130 in contact with the probe through member 123 within the first through-hole 126a can be reduced, so the friction with the probe through member 123 can be reduced. In order to further reduce the friction, the corners (edge portions) of the periphery of each first through-hole of each guide member can also be removed.

[0231] Further, by making the clearance of each first guide hole formed in each guide member arranged in the up-down direction with respect to the first probe 130 sufficiently small, the inclination of the first probe 130 can be reduced.

[0232] Further, by making the thickness of each spacer be a prescribed thickness or less determined based on the spring constant of the first probe 130, the case where the first probe 130 buckles in each first spacer hole can be suppressed.

[0233] In addition, although not illustrated, the second through-hole of the probe through member 123 can also be made in the same structure as the first through-hole 126a.

[0234] [1-8-3. Modification 3]

[0235] Use Figure 36 The probe unit of Modification 3 of the present embodiment will be described. Figure 36is a schematic cross-sectional view showing a portion of the probe unit of the present modification.

[0236] The probe unit of the present modification differs from the probe unit of Modification 2 in the structure of the probe-through member 223.

[0237] The probe-through member 223 has a plurality of guide members 223a, 223c arranged apart from each other in the up-down direction. At each of the plurality of guide members 223a, 223c, a first guide hole through which the first probe 130 passes is formed. As shown in Figure 36 A first guide hole 226aa is formed in the guide member 223a. Further, in the guide member 223c arranged below the guide member 223a, a first guide hole 226ca is formed.

[0238] In the present modification, a spacer 223b is arranged between the two guide members 223a adjacent to each other and the guide member 223c. A first spacer hole 226ba is formed in the spacer 223b.

[0239] The first through hole 226a of the probe-through member 223 includes the first guide holes 226aa, 226ca and the first spacer hole 226ba. That is, the first probe 130 passes through the first guide holes 226aa, 226ca and the first spacer hole 226ba.

[0240] The diameter of the first spacer hole 226ba is larger than the diameters of the first guide holes 226aa, 226ca. Thus, the first probe 130 is guided by the first guide holes 226aa, 226ca. Further, as with the probe-through member 123 of Modification 2, by making the thickness of each guide member smaller than the thickness of the spacer 223b, the area of the first probe 130 in contact with the probe-through member 223 within the first through hole 226a can be reduced, so the friction with the probe-through member 223 can be reduced.

[0241] In the present modification, the gap between the first guide hole 226aa of the guide member 223a closest to (i.e., arranged uppermost of) the probe fixing member among the plurality of guide members and the first probe 130 is larger than the gap between the first guide hole 226ca of the guide member 223c farthest from (i.e., arranged lowermost of) the probe fixing member among the plurality of guide members and the first probe 130. Thus, the position of the first probe 130 can be precisely restricted by the first guide hole 226ca of the guide member 223c, and the friction between the guide member 223a and the first probe 130 can be reduced.

[0242] Further, in the present modification example, the thickness of the guide member 223a closest to the probe fixing member among the plurality of guide members is greater than the thickness of the guide member 223c farthest from the probe fixing member among the plurality of guide members. Here, as described above, each probe is bent in the cavity 21v in a case where the probe is pressed against the examination object. Therefore, in the portion of the first probe 130 located in the first through-hole 226a closest to the cavity 21v, that is, the uppermost portion, the stress accompanying the bending of the first probe 130 becomes large. By increasing the thickness of the guide member 223a disposed in the uppermost portion among the plurality of guide members as in the present modification example, the inclination with respect to the up-down direction in the first through-hole 226a of the first probe 130 can be reduced.

[0243] Further, although not illustrated, the second through-hole of the probe through member 223 can also be made to have the same structure as the first through-hole 226a.

[0244] [1-8-4. Modification Example 4]

[0245] Use Figure 37 The probe unit of Modification Example 4 of the present embodiment will be described. Figure 37 is a schematic cross-sectional view showing a portion of the probe unit of the present modification example.

[0246] The probe unit of the present modification example differs from the probe unit of Modification Example 3 in the structure of the first probe 130a.

[0247] The first probe 130a has the electrically conductive body 36 and an insulating film 338. Regarding the insulating film 338 of the present modification example, the insulating film 338 is formed in the portion of the first probe 130a that contacts each probe through member 223. Thereby, it is possible to suppress the occurrence of a short circuit between the first probe 130a and other electrically conductive members via the probe through member 223. Further, since it is possible to use an electrically conductive member in the probe through member 223, the degree of freedom of the material used in the probe through member 223 can be improved.

[0248] Further, the second probe can also be made to have the same structure as the first probe 130a.

[0249] [1-8-5. Modification Example 5]

[0250] Use Figure 38 The probe unit of Modification Example 5 of the present embodiment will be described. Figure 38 is a schematic plan view showing a portion of the probe through member 423 of the probe unit of the present modification example.

[0251] The probe unit of the present modification example differs from the probe unit 20 described above in the structure of the first through-hole 426a of the probe through member 423.

[0252] The probe through member 423 of this modification example has a first inner wall 426w that surrounds the first through hole 426a. The first inner wall 426w has one or more first protrusions 426P that smoothly protrude toward the first through hole when the probe through member 423 is viewed from above. Thus, the contact area between the first inner wall 426w and the first probe 30 can be reduced. As a result, the friction between the probe through member 423 and the first probe 30 can be reduced. Furthermore, since the first protrusions 426P smoothly protrude without having corners, the abrasion between the first probe 30 and the first inner wall 426w can be reduced. Furthermore, the occurrence of dust generated by the first probe 30 being cut by the first protrusions 426P and adhering to the inspection object to cause a change in the characteristics after the inspection can be reduced.

[0253] [1-8-6. Modification Example 6]

[0254] Using Figure 39 The probe unit of Modification Example 6 of the present embodiment will be described. Figure 39 is a schematic plan view that shows a portion of the probe through member 23 of the probe unit of the present modification example.

[0255] The probe unit of the present modification example differs from the probe unit 20 described above in the structure of the first probe 430.

[0256] The first probe 430 of the present modification example has a rectangular cross-sectional shape. Thus, the contact area between the probe through member 23 and the first probe 430 in the first through hole 26a can be reduced. As a result, the friction between the probe through member 23 and the first probe 430 can be reduced. The corners of the cross section of the first probe 430 can also be formed as smooth curved lines. Thus, the abrasion of the first probe 430 and the probe through member 23 can be reduced. This first probe 430, since it has a rectangular cross-sectional shape, can be easily manufactured by etching or cutting processing from a flat plate. This can also be used in the probe unit like that of Embodiment 4 described later.

[0257] [1-8-7. Modification Example 7]

[0258] Using Figure 40 The probe unit of Modification Example 7 of the present embodiment will be described. Figure 40 is a schematic cross-sectional view that shows a portion of the probe unit of the present modification example. In Figure 40 , a semiconductor laser device 80 is also shown as an example of an inspection object.

[0259] The probe unit of the present modification example differs from the probe unit of Modification Example 1 in the structures of the unit main body 521 and the second probe 140.

[0260] The second probe 140 of this modification example has the electrically conductive body 46 and the insulating film 48. The electrically conductive body 46 has the same structure as the electrically conductive body 36 of the first probe 130, and the insulating film 48 has the same structure as the insulating film 38 of the first probe 130. That is, the first probe 130 and the second probe 140 have the same structure.

[0261] The unit main body 521 has a probe through member 523 and a probe fixing member 524.

[0262] The probe through member 523 has an opposing surface 521u that opposes the inspection object, and a first upper surface 523a and a second upper surface 523b on the back side of the opposing surface 521u. In the probe through member 523, a first through hole 526a and a second through hole 526b are formed. The first through hole 526a passes through in the up-down direction from the first upper surface 523a to the opposing surface 521u. The second through hole 526b passes through in the up-down direction from the second upper surface 523b to the opposing surface 521u. The diameter of the first through hole 526a is larger than the diameter of the electrically conductive body 36 of the first probe 130, and is smaller than the diameter of the portion in the first probe 130 in which the insulating film 38 is formed. The diameter of the second through hole 526b is larger than the diameter of the electrically conductive body 46 of the second probe 140, and is smaller than the diameter of the portion in the second probe 140 in which the insulating film 48 is formed. The lower end of the portion in the first probe 130 in which the insulating film 38 is formed is in contact with the upper surface (first upper surface 523a) of the first through hole 526a. Also, the lower end of the portion in the second probe 140 in which the insulating film 48 is formed is in contact with the upper surface (second upper surface 523b) of the second through hole 526b. As shown in FIG. 5, the up-down direction positions of the first upper surface 523a and the second upper surface 523b are different, and the second upper surface 523b is higher than the first upper surface 523a. Figure 40

[0263] ​The probe fixing member 524 has a first lower surface 524a and a second lower surface 524b opposed to the probe through member 523, and an upper surface 521t on the back side thereof. In the probe fixing member 524, a first fixing hole 527a and a second fixing hole 527b are formed. The first fixing hole 527a penetrates in the up-down direction from the upper surface 521t to the first lower surface 524a. The second fixing hole 527b penetrates in the up-down direction from the upper surface 521t to the second lower surface 524b. The diameter of the first fixing hole 527a is larger than the diameter of the electric conductor 36 of the first probe 130, and is smaller than the diameter of the portion of the first probe 130 in which the insulating film 38 is formed. The diameter of the second fixing hole 527b is larger than the diameter of the electric conductor 46 of the second probe 140, and is smaller than the diameter of the portion of the second probe 140 in which the insulating film 48 is formed. The upper end of the portion of the first probe 130 in which the insulating film 38 is formed is in contact with the lower surface (the first lower surface 524a) of the first fixing hole 527a. The upper end of the portion of the second probe 140 in which the insulating film 48 is formed is in contact with the lower surface (the second lower surface 524b) of the second fixing hole 527b. As shown in FIG. 7, the up-down direction positions of the first lower surface 524a and the second lower surface 524b are different, and the second lower surface 524b is higher than the first lower surface 524a. Figure 40

[0264] In the present modification example, since the first probe 130 and the second probe 140 have the same structure, the length of the portion of the first probe 130 on the lower end 131 side in which the insulating film 38 is not formed is equal to the length of the portion of the second probe 140 on the lower end 141 side in which the insulating film 48 is not formed. Thus, the difference between the up-down direction positions of the lower end 131 of the first probe 130 and the lower end 141 of the second probe 140 is determined in accordance with the height difference between the first upper surface 523a and the second upper surface 523b of the probe through member 523. Thereby, by adjusting the height difference between the first upper surface 523a and the second upper surface 523b, it is possible to adjust the difference between the up-down direction positions of the lower end 131 of the first probe 130 and the lower end 141 of the second probe 140.

[0265] ​The height difference between the first upper surface 523a and the second upper surface 523b of the probe through member 523 can be equal to the height difference between the first lower surface 524a and the second lower surface 524b of the probe fixing member 524. Further, the length from the first upper surface 523a of the probe through member 523 to the first lower surface 524a of the probe fixing member 524, and the length from the second upper surface 523b of the probe through member 523 to the second lower surface 524b of the probe fixing member 524 can be equal to the length of the portion of the first probe 130 covered with the insulating film 38 (i.e., the length of the portion of the second probe 140 covered with the insulating film 48). Thereby, the relative positions of the respective probes with respect to the probe fixing member 524 can be adjusted (i.e., positioned) by the respective insulating films.

[0266] [1-8-8. Modification 8]

[0267] Using Figures 41-43 The probe unit of Modification 8 of the present embodiment will be described. Figures 41-43 is a schematic side view showing the structure of each probe of the probe unit of the present modification. In Figures 41-43 , the height adjustment member 50 and a semiconductor laser device 80 as an example of an inspection object are shown together.

[0268] As the relationship between the length L1 of the portion of the first probe 30 protruding from the opposing surface 21u, the length L2 of the portion of the second probe 40 protruding from the opposing surface 21u, the height H of the height adjustment member 50, the height d1 from the lower surface of the sub-assembly 84 to the first electrode of the semiconductor laser device 80, and the height d2 from the lower surface of the sub-assembly 84 to the second electrode of the element 82, various examples can be assumed.

[0269] For example, as shown in Figure 41 , there is a case where the following formula (8) is satisfied.

[0270] L1 > L2 > H (8)

[0271] Further, as shown in Figure 42 , there is a case where the following formula (9) is satisfied.

[0272] L1 > H > L2 (9)

[0273] Further, as shown in Figure 43 , there is a case where the following formula (10) is satisfied.

[0274] H > L1 > L2 (10)

[0275] In either case, the height adjustment member 50 can be brought into contact with the stage 70 without physical interference of the semiconductor laser device 80 with the opposing surface 21u, provided that the following formula (11) is satisfied.

[0276] H > d2 > d1 (11)

[0277] In addition, in Figures 41-43 , the relative position of the semiconductor laser device 80 with respect to the height adjustment member 50 in a state where the height adjustment member 50 is in contact with the stage 70 is indicated by a broken line. As Figures 41-43 indicated, the height adjustment member 50 can be brought into contact with the stage 70 without physical interference of the semiconductor laser device 80 with the opposing surface 21u.

[0278] [1-8-9. Modification 9]

[0279] The probe unit of Modification 9 of the present embodiment will be described. Figure 44 is a schematic cross-sectional view showing a part of the probe unit of the present modification. In Figure 44 , the detailed structure of the semiconductor laser device 80 is also indicated as an example of the inspection object. Figure 44

[0280] The probe unit of the present modification differs from the above-described probe unit 20 in the structure of the first probe 230, the second probe 240, and the unit main body 621.

[0281] The semiconductor laser device 80 has a sub-assembly 84 and an element 82 as Figure 44 indicated. The sub-assembly 84 has a lower surface 84b and an upper surface 84a on the back side of the lower surface 84b. The first electrode 85 is disposed on the upper surface 84a of the sub-assembly 84.

[0282] The element 82 has an element lower surface 82b and an element upper surface 82a on the back side of the element lower surface 82b. The element 82 is disposed on the upper surface 84a of the sub-assembly 84. The second electrode 83 is disposed on the element upper surface 82a of the element 82.

[0283] In addition, each of the above-described semiconductor laser devices 80 also has the detailed structure as Figure 44 indicated.

[0284] In the present modification, the first probe 230 and the second probe 240 have the same modulus of elasticity. For example, the first probe 230 and the second probe 240 can be formed of the same material. In addition, the second probe 240 can be thinner than the first probe 230. Thus, the spring constant of the second probe 240 is smaller than the spring constant of the first probe 230, so that damage to the second electrode 83 contacted by the second probe 240 can be reduced. ​

[0285] The unit body 621 has a probe through part 623 and a probe fixing part 624.

[0286] The probe penetration member 623 has a facing surface 621u opposite to the object being inspected, and a first upper surface 623a and a second upper surface 623b on the back side of the facing surface 621u. A first through hole 626a and a second through hole 626b are formed in the probe penetration member 623. The first through hole 626a extends vertically from the first upper surface 623a to the facing surface 621u. The second through hole 626b extends vertically from the second upper surface 623b to the facing surface 621u. In this modified example, as... Figure 44 As shown, the first upper surface 623a and the second upper surface 623b are in the same vertical position.

[0287] The probe fixing component 624 has a first lower surface 624a and a second lower surface 624b opposite to the probe through component 623, and an upper surface 621t on their back side. A first fixing hole 627a and a second fixing hole 627b are formed in the probe fixing component 624. The first fixing hole 627a extends vertically from the upper surface 621t to the first lower surface 624a. The second fixing hole 627b extends vertically from the upper surface 621t to the second lower surface 624b. Figure 44 As shown, the first lower surface 624a and the second lower surface 624b are positioned differently in the vertical direction, with the second lower surface 624b being higher than the first lower surface 624a.

[0288] By giving the unit body 621 the structure described above, the length of the second probe 240 from the probe fixing member 624 to the probe through member 623 can be longer than the length of the first probe 230 from the probe fixing member 624 to the probe through member 623. Therefore, the second probe 240 is easier to buckle compared to the first probe 230. In other words, the spring constant of the second probe 240 is smaller than that of the first probe 230. This reduces the elastic restoring force accompanying the buckling of the second probe 240, thus reducing damage to the second electrode 83 that the second probe 240 contacts.

[0289] In addition, Figure 44 In the example shown, the first upper surface 623a and the second upper surface 623b are positioned vertically in the same direction, but the second upper surface 623b can also be positioned lower than the first upper surface 623a. This allows for a longer length of the second probe 240 from the probe fixing member 624 to the probe through member 623. Consequently, the elastic restoring force of the second probe 240 accompanying buckling can be further reduced.

[0290] [1-8-10. Variation Example 10]

[0291] Using Figure 45 The probe unit of the modification 10 of the present embodiment will be described. Figure 45 is a schematic cross-sectional view showing a part of the probe unit of the present modification. In Figure 45 , as an example of the inspection object, the detailed structure of the semiconductor laser device 80 is also shown.

[0292] The probe unit of the present modification differs from the probe unit of the modification 9 in the structure of the first probe 330 and the second probe 340.

[0293] The radius of curvature of the lower end 341 of the second probe 340 of the present modification is larger than the radius of curvature of the lower end 331 of the first probe 330.

[0294] Thereby, the pressure with which the lower end 341 of the second probe 340 pushes the second electrode 83 of the semiconductor laser device 80 can be reduced. Thus, the damage to the second electrode 83 can be reduced.

[0295] Further, the second probe 340 can be thinner than the first probe 330. Thereby, the spring constant of the second probe 340 is smaller than the spring constant of the first probe 330, so that the damage to the second electrode 83 contacted by the second probe 340 can be further reduced.

[0296] [1-8-11. Embodiment]

[0297] Using Figures 46-50 Embodiments of the through-part member inclined surface 21s of the probe unit 20 of the present embodiment, and the stage inclined surface 70s of the stage 70 will be described. Figure 46 and Figure 47 are a schematic perspective view and a cross-sectional view showing the first embodiment of the through-part member inclined surface 21s and the stage inclined surface 70s of the present embodiment, respectively. Figure 47 shows Figure 46 the cross section shown by the single-dot chain line in Figure 48 is a schematic cross-sectional view showing the second embodiment of the through-part member inclined surface 21s and the stage inclined surface 70s of the present embodiment. Figure 49 is a schematic perspective view showing the third embodiment of the through-part member inclined surface 21s and the stage inclined surface 70s of the present embodiment. Figure 50 is a schematic cross-sectional view showing the fourth embodiment of the through-part member inclined surface 21s of the present embodiment.

[0298] As Figure 46 and Figure 47As shown in the first embodiment, a planar (i.e., flat) through member inclined surface 21s is formed in the portion of the opposing surface 21u that opposes the laser LB from the semiconductor laser device 80. Further, a planar worktable inclined surface 70s is formed in the portion of the placement surface 70a that opposes the laser LB from the semiconductor laser device 80.

[0299] Further, as Figure 47 shown, the (relative to a horizontal plane perpendicular to the vertical direction) inclined angle β2 of the through member inclined surface 21s and the worktable inclined surface 70s can be determined in accordance with the divergence angle α of the laser LB in the vertical direction. For example, as the element 82 of the semiconductor laser device 80, in the case of using a semiconductor laser element of GaN type or AlGaInAsP type, in which the divergence angle α is about 46 degrees, the inclined angle β2 can be set to about 23 degrees.

[0300] In addition, the inclined angle β2 can be increased as in the second embodiment shown in Figure 48 . Thereby, it is possible to reduce physical interference of the measurement device 90 and the like with the worktable 70 and the probe unit 20. For example, the inclined angle β2 can be 45 degrees or more.

[0301] On the other hand, the inclined angle β2 can be 45 degrees or less. Thereby, it is possible to maximize the path of heat diffused from the semiconductor laser device 80 to the worktable 70. Thus, it is possible to improve the heat dissipation characteristics of the worktable 70.

[0302] Further, as in the third embodiment shown in Figure 49 , the through member inclined surface 21s and the worktable inclined surface 70s can have a curved surface shape corresponding to the divergence angle α1 in the vertical direction and the divergence angle α2 in the horizontal direction of the laser LB. In Figure 49 the example shown, the through member inclined surface 21s and the worktable inclined surface 70s have a shape of a side surface of an elliptical cone with the light emission point of the semiconductor laser device 80 as the apex.

[0303] Further, as in the fourth embodiment shown in Figure 50 , in the case where the opposing surface 21u has the through member inclined surface 21s, the first through hole 26a through which the first probe 30 passes can pass through the through member inclined surface 21s. Similarly, the second through hole 26b through which the second probe 40 passes can pass through the through member inclined surface 21s.

[0304] (Embodiment 2)

[0305] The probe unit of Embodiment 2 will be described. The probe unit of this embodiment differs from the probe unit 20 of Embodiment 1 in the shape of each probe. Hereinafter, for the probe unit of this embodiment, differences from the probe unit 20 of Embodiment 1 will be described using Figures 51-53 will be described.

[0306] Figure 51 and Figure 52 are schematic plan and sectional views showing the structure of the probe unit 720 of this embodiment. In Figure 52 is a sectional view showing the state in which the height adjustment member 50 provided in the probe unit 720 of this embodiment is in contact with the worktable 70. Figure 51 Figure 53 As shown in and

[0307] The probe unit 720 of this embodiment differs from the probe unit 20 of Embodiment 1 in the shape of the first probe 30 and the second probe 40. Figure 51 Figure 52 The first probe 30 of this embodiment has a first offset portion 34 offset in a first offset direction with respect to the lower end 31 of the first probe 30 in plan view. In this embodiment, the first offset direction is the positive direction of the Y-axis direction. The first offset portion 34 includes the upper end 32 of the first probe 30, which is inclined in the positive direction of the Y-axis direction with respect to the vertical direction.

[0308] The second probe 40 of this embodiment has a second offset portion 44 offset in a second offset direction with respect to the lower end 41 of the second probe 40 in plan view. In this embodiment, the second offset direction is the negative direction of the Y-axis direction. The second offset portion 44 includes the upper end 42 of the second probe 40, which is inclined in the negative direction of the Y-axis direction with respect to the vertical direction.

[0309] To realize such a structure, the first fixing hole 27a of the probe fixing member 24 formed in the probe unit 720 can be provided at a position offset from directly above the first through-hole 26a, or can extend in a direction inclined with respect to the vertical direction. Similarly, the second fixing hole 27b can be provided at a position offset from directly above the second through-hole 26b, or can extend in a direction inclined with respect to the vertical direction.

[0310] To realize such a structure, the first fixing hole 27a of the probe fixing member 24 formed in the probe unit 720 can be provided at a position offset from directly above the first through-hole 26a, or can extend in a direction inclined with respect to the vertical direction. Similarly, the second fixing hole 27b can be provided at a position offset from directly above the second through-hole 26b, or can extend in a direction inclined with respect to the vertical direction.

[0311] ​As above, the first probe 30 and the second probe 40 are bent in advance without contacting the inspection object. Thereby, each probe can be easily buckled, so that the linearity of the elastic restoring force of each probe with respect to the displacement amount of the lower end can be improved. That is, the displacement amount dependency of the spring constant of each probe can be reduced. Thus, the magnitude of the elastic restoring force can be easily controlled. Further, since each probe is bent in advance, the direction of buckling of each probe can be controlled.

[0312] Further, in the present embodiment, the first and second displacement directions are not parallel to the arrangement direction of the first and second probes 30 and 40. As shown in FIG. 1, since the direction of buckling of the first probe 30 is parallel to the first displacement direction, and the direction of buckling of the second probe 40 is parallel to the second displacement direction, the displacement of the first and second probes 30 and 40 in their arrangement direction due to buckling can be suppressed. Thus, the contact of the first and second probes 30 and 40 can be suppressed. Further, in the present embodiment, the first and second displacement directions are opposite to each other. Thereby, as shown in FIG. 1, the direction in which the first probe 30 is displaced due to buckling (Y-axis direction negative direction) and the direction in which the second probe 40 is displaced due to buckling (Y-axis direction positive direction) are opposite to each other, so that the contact of the first and second probes 30 and 40 at the time of buckling can be suppressed. Figure 53 Figure 53

[0313] Further, since the first probe 30 can suppress the vibration in the direction parallel to the first displacement direction, and the second probe 40 can suppress the vibration in the direction parallel to the second displacement direction, the first and second displacement directions can be parallel to the transport direction in the case of transporting the probe unit 720. Thereby, the vibration of each probe accompanying the transport of the probe unit 720 can be suppressed.

[0314] The first and second displacement directions can also be parallel to the direction of the maximum acceleration at the time of transport of the inspection apparatus having the probe unit 720. For example, in the case of transporting the inspection apparatus along a circumference as in the inspection system 1 described above, each displacement direction can also be parallel to the tangential direction of the circumference. Thereby, the vibration of each probe accompanying the transport of the probe unit 720 can be suppressed.

[0315] With the probe unit 720 having the above structure, the damage to the inspection object can also be suppressed as with the probe unit 20 of Embodiment 1.

[0316] (Embodiment 3)

[0317] ​​The probe unit of Embodiment 3 will be described. The probe unit of this embodiment is mainly different from the probe unit 720 of Embodiment 2 in the deflection direction of each probe. Hereinafter, for the probe unit of this embodiment, the differences from the probe unit 720 of Embodiment 2 will be described using Figure 54 and Figure 55 .

[0318] Figure 54 is a schematic cross-sectional view showing the structure of the probe unit 720a of this embodiment. Figure 55 is a schematic cross-sectional view showing the state in which the unit contact surface 150b of the height adjustment member 150 provided to the worktable 70 is in contact with the probe unit 720a of this embodiment.

[0319] In the probe unit 720a of this embodiment, the first deflection direction (negative direction of the X-axis direction) of the first probe 30 and the second deflection direction (negative direction of the X-axis direction) of the second probe 40 are the same direction, and are parallel to the arrangement direction (X-axis direction) of the first probe 30 and the second probe 40. In this case, as shown in Figure 55 , the directions of the buckling of the first probe 30 and the second probe 40 are also the same direction. Therefore, in such a structure, the contact of the first probe 30 and the second probe 40 can also be suppressed. Further, in this structure, the interval Δz in the up-down direction of the first probe 30 and the second probe 40 can be increased. This structure can be realized by, for example, making the angle of the pre-bending of the second probe 40 larger than the angle of the pre-bending of the first probe 30. Thereby, the contact of the first probe 30 and the second probe 40 can be further suppressed.

[0320] Further, in this embodiment, the height adjustment member 150 is provided to the placement surface 70a of the worktable 70. The unit body 21 has an opposing surface 21u that opposes the height adjustment member 150. At least one of the unit contact surface 150b and the opposing surface 21u is a rough surface. In this embodiment, the unit contact surface 150b is a rough surface. With such a structure, the interval between the opposing surface 21u of the probe unit 720a and the placement surface 70a of the worktable 70 can be precisely controlled by pushing the probe unit 720a against the height adjustment member 150, and the vibration of the probe unit 720a can be suppressed.

[0321] Further, the height adjustment member 150 of this embodiment has a positioning portion 156. The positioning portion 156 is a portion for positioning the examination object, and, for example, by pushing the examination object against the positioning portion 156, the examination object can be arranged at a prescribed position.

[0322] With the probe unit 720a having the above structure, the damage to the examination object can also be suppressed as with the probe unit 20 of Embodiment 1.

[0323] (Embodiment 4)

[0324] The probe unit of Embodiment 4 will be described. The probe unit of the present embodiment is mainly different from the probe unit 720 of Embodiment 2 in the shape of each probe. Hereinafter, for the probe unit of the present embodiment, the differences from the probe unit 720 of Embodiment 2 will be described using Figure 56 and Figure 57 .

[0325] Figure 56 is a schematic cross-sectional view showing the structure of the probe unit 820 of the present embodiment. Figure 57 is a schematic cross-sectional view showing the state in which the height adjustment member 50 provided to the probe unit 820 is in contact with the table 70 of the present embodiment.

[0326] The probe unit 820 of the present embodiment is different from the probe unit 720 of Embodiment 2 in the shape of the first probe 830 and the second probe 840.

[0327] The first probe 830 has a first offset portion 834 offset in a first offset direction with respect to the lower end 831 of the first probe 830 in plan view. The distance between the position of the upper end 832 of the first probe 830 in plan view and the position of the lower end 831 is 0. That is, the position of the upper end 832 of the first probe 830 in plan view coincides with the position of the lower end 831. In other words, an axis 830A parallel to the vertical direction passes through the lower end 831 and the upper end 832 of the first probe 830. In the present embodiment, the first offset portion 834 of the first probe 830 has a U-shaped shape. The first offset direction is the positive direction of the X-axis direction.

[0328] The second probe 840 has a second offset portion 844 offset in a second offset direction with respect to the lower end 841 of the second probe 840 in plan view. The distance between the position of the upper end 842 of the second probe 840 in plan view and the position of the lower end 841 is 0. That is, the position of the upper end 842 of the second probe 840 in plan view coincides with the position of the lower end 841. In other words, an axis 840A parallel to the vertical direction passes through the lower end 841 and the upper end 842 of the second probe 840. In the present embodiment, the second offset portion 844 of the second probe 840 has a U-shaped shape. The second offset direction is the negative direction of the X-axis direction.

[0329] In each probe having such a structure, in a case where the lower end of each probe is in contact with the examination object and receives a force upward, the deformation is concentrated in the vicinity of each offset portion. Therefore, it is possible to reduce the displacement in a direction perpendicular to the vertical direction in the portion of each probe corresponding to each through-hole. Thus, it is possible to reduce the friction between each probe and the probe-through member 23.

[0330] Further, in the present embodiment, the first and second offset directions are parallel to the arrangement direction of the first and second probes 830 and 840. However, since the first offset direction is a direction away from the second probe 840 and the second offset direction is a direction away from the first probe 830, contact of the first and second probes 830 and 840 can be suppressed.

[0331] (Embodiment 5)

[0332] The probe unit of Embodiment 5 will be described. The probe unit of the present embodiment is mainly different from the probe unit 820 of Embodiment 4 in the offset direction of each probe. Hereinafter, for the probe unit of the present embodiment, the different points from the probe unit 820 of Embodiment 4 will be mainly described using Figures 58-60 .

[0333] Figure 58 , Figure 59 and Figure 60 are schematic plan views, a first cross-sectional view and a second cross-sectional view, respectively, showing the structure of the probe unit 820a of the present embodiment. In Figure 59 , the cross section at line XXXXXIX-XXXXXIX of Figure 58 is shown. In Figure 60 , the cross section at line XXXXXX-XXXXXX of Figure 58 is shown.

[0334] The probe unit 820a of the present embodiment is different from the probe unit 820 of Embodiment 4 in the offset direction of the first and second probes 830 and 840.

[0335] The first probe 830 has a first offset portion 834 offset in the first offset direction with respect to the lower end 831 of the first probe 830 in plan view. In the present embodiment, the first offset direction is the positive direction of the Y-axis direction.

[0336] The second probe 840 has a second offset portion 844 offset in the second offset direction with respect to the lower end 841 of the second probe 840 in plan view. In the present embodiment, the second offset direction is the positive direction of the Y-axis direction.

[0337] In the present embodiment, the first and second offset directions are the same direction. However, in the present embodiment, the first and second offset directions are perpendicular to the arrangement direction of the first and second probes 830 and 840. Therefore, contact of the first and second probes 830 and 840 can be suppressed.

[0338] (Embodiment 6)

[0339] The probe unit of Embodiment 6 will be described. The probe unit of this embodiment is mainly different from the probe unit 720 of Embodiment 2 in the number of probes. Hereinafter, for the probe unit of this embodiment, differences from the probe unit 720 of Embodiment 2 will be focused on, and the description will be given using the same reference numerals as those of the probe unit 720 of Embodiment 2. Figures 61-63 will be described.

[0340] Figure 61 , Figure 62 and Figure 63 are schematic plan views, a first cross-sectional view, and a second cross-sectional view, respectively, showing the structure of the probe unit 920 of this embodiment. In Figure 62 , the cross section at line XXXXXXII-XXXXXXII of Figure 61 is shown. In Figure 63 , the cross section at line XXXXXXIII-XXXXXXIII of Figure 61 is shown.

[0341] The probe unit 920 of this embodiment is different from the probe unit 720 of Embodiment 2 in the number of the first probes 30 and the second probes 40.

[0342] The probe unit 920 has a plurality of the first probes 30 electrically connected in parallel to each other and a plurality of the second probes 40 electrically connected in parallel to each other. In the example shown in Figures 61-63 , the probe unit 920 has six first probes 30 and three second probes 40. Further, in this embodiment, the semiconductor laser device 80 as the inspection object, with respect to the elements 82 on the upper surface of the sub-assembly 84, has the first electrodes arranged on both sides of one side and the other side, the three first probes 30 are in contact with the first electrode on one side, and the three first probes 30 are in contact with the first electrode on the other side. Further, the three second probes 40 are in contact with the second electrodes of the elements 82.

[0343] Thus, the force required to push the semiconductor laser device 80 can be shared by the plurality of first probes 30 and the plurality of second probes 40, so the force exerted on the semiconductor laser device 80 by each probe can be reduced. As a result, the damage to the semiconductor laser device 80 can be reduced.

[0344] Further, since the plurality of first probes 30 and the plurality of second probes 40 are used to supply current to the semiconductor laser device 80, it is easy to supply more current.

[0345] Further, in this embodiment, as with the probe unit 720 of Embodiment 2, the plurality of first probes 30 are each inclined in the first offset direction (the positive direction of the Y-axis direction), and the plurality of second probes 40 are each inclined in the second offset direction (the negative direction of the Y-axis direction). Thus, it is possible to suppress the case where the plurality of first probes 30 come into contact with each other, and it is possible to suppress the case where the plurality of second probes 40 come into contact with each other.

[0346] (Embodiment 7)

[0347] The probe unit of Embodiment 7 is described. The probe unit of the present embodiment differs from the probe unit 20 of Embodiment 1 in that the probe unit of the present embodiment further has elastic members in addition to the probe. Hereinafter, the probe unit of the present embodiment is described focusing on the points of difference from the probe unit 20 of Embodiment 1, using the same reference numerals as in Embodiment 1. Figures 64-66 is described.

[0348] Figure 64 and Figure 65 are schematic plan and sectional views each showing the structure of the probe unit 1020 of the present embodiment. In Figure 65 is shown the cross section at the line XXXXXV-XXXXXXV of Figure 64 Figure 66 is a schematic sectional view showing the state in which the height adjustment member 50 of the probe unit 1020 is in contact with the table 70.

[0349] The probe unit 1020 of the present embodiment has a first elastic mechanism 1035 and a second elastic mechanism 1045 fixed to the probe fixing member 24.

[0350] The first elastic mechanism 1035 has a first elastic member 1037 fixed to the probe fixing member 24 and a first housing 1036 that houses the first elastic member 1037 and is fixed to the probe fixing member 24. In the present embodiment, the first elastic member 1037 is fixed to the probe fixing member 24 via the first housing 1036. The first elastic member 1037 is stretchable and contractible in a direction including a component of the vertical direction. The first elastic member 1037 can be, for example, a coil spring.

[0351] In the present embodiment, the first probe 30 is fixed to the probe fixing member 24 via the first elastic member 1037.

[0352] The second elastic mechanism 1045 has a second elastic member 1047 fixed to the probe fixing member 24 and a second housing 1046 that houses the second elastic member 1047 and is fixed to the probe fixing member 24. In the present embodiment, the second elastic member 1047 is fixed to the probe fixing member 24 via the second housing 1046. The second elastic member 1047 is stretchable and contractible in a direction including a component of the vertical direction. The second elastic member 1047 can be, for example, a coil spring.

[0353] In the present embodiment, the second probe 40 is fixed to the probe fixing member 24 via the second elastic member 1047.

[0354] ​In such a structure, by making the spring constant of the first elastic member 1037 smaller than the spring constant of the first probe 30, as shown in Figure 66 , it is possible to push the semiconductor laser device 80 as the inspection object mainly by the elastic restoring force of the first elastic member 1037. Further, by making the spring constant of the second elastic member 1047 smaller than the spring constant of the second probe 40, as shown in Figure 66 , it is possible to push the semiconductor laser device 80 as the inspection object mainly by the elastic restoring force of the second elastic member 1047.

[0355] Thus, it is not necessary to necessarily make each probe buckling, so it is possible to improve the linearity of the elastic restoring force of each probe with respect to the displacement amount of the lower end. That is, it is easy to control the magnitude of the elastic restoring force.

[0356] In the present embodiment, the first elastic member 1037 and the second elastic member 1047 are stretchable and contractable in a direction including a component in the vertical direction, and the distance between the position of the upper end 32 of the first probe 30 and the position of the lower end 31 thereof, and the distance between the position of the upper end 42 of the second probe 40 and the position of the lower end 41 thereof (distance Dp shown in Figure 65 ) are larger than 0. Thereby, for example, in a case where the inspection object is small and it is necessary to make the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 close to each other, it is also possible to make the distance between the upper end 32 of the first probe 30 and the upper end 42 of the second probe 40 larger than the distance between the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40. Thus, it is possible to install an elastic mechanism having a larger interval than the front ends of each probe to the upper end of each probe.

[0357] In the present embodiment, as shown in Figure 65 , the vicinity of the upper end of each probe is inclined at an angle θs with respect to the vertical direction. Thereby, the distance between the upper end 32 of the first probe 30 and the upper end 42 of the second probe 40 is increased. Further, it is also possible to correspondingly stretch and contract the first elastic member 1037 and the second elastic member 1047 in a direction inclined with respect to the vertical direction. Thereby, it is possible to increase the distance between the first elastic member 1037 and the second elastic member 1047, so it is possible to install an elastic mechanism having a larger interval than the front ends of each probe to the upper end of each probe.

[0358] (Modified Examples, etc.)

[0359] The above describes the probe unit and the like of the present disclosure based on each embodiment, but the present disclosure is not limited to each of the above-described embodiments.

[0360] For example, in the above-described embodiment 1 and the like, the first probe and the second probe exhibit the buckling phenomenon, but it is also possible that only one of the first probe and the second probe exhibits the buckling phenomenon.

[0361] Further, the shapes obtained by applying various modifications conceivable to those skilled in the art to each of the above-described embodiments, or the shapes realized by arbitrarily combining the constituent elements and functions of each of the above-described embodiments within a range not departing from the gist of the present disclosure are also included in the present disclosure.

[0362] Industrial applicability

[0363] The probe unit and the like of the present disclosure are particularly effective in the inspection of semiconductor laser devices and the like in which a slight damage becomes a problem.

[0364] Explanation of reference numerals

[0365] 1, 1a inspection system

[0366] 5, 5a conveyance device

[0367] 10 inspection device

[0368] 11 base

[0369] 12 support column

[0370] 13, 15, 17 slide rail

[0371] 14 up-and-down moving member

[0372] 16 unit moving member

[0373] 18 connecting spring

[0374] 19 unit support member

[0375] 20, 720, 720a, 820, 820a, 920, 1020 probe unit

[0376] 21, 521, 621 unit body

[0377] 21s through member inclined surface

[0378] 21u, 521u, 621u opposing surface

[0379] 21v cavity

[0380] 23, 123, 223, 423, 523, 623 probe through member

[0381] 24, 524, 624 probe fixing member

[0382] 26a, 126a, 226a, 426a, 526a, 626a first through hole

[0383] 26b, 526b, 626b second through hole

[0384] 27a, 527a, 627a first fixing hole

[0385] 27b, 527b, 627b second fixing hole

[0386] 28 adhesive

[0387] 30, 130, 130a, 230, 330, 430, 830 first probe

[0388] 31, 41, 131, 141, 331, 341, 831, 841 lower end

[0389] 32, 42, 832, 842 upper end

[0390] 34, 834 first offset portion

[0391] 36, 46 electric conductor

[0392] 38, 48, 338 insulating film

[0393] 40, 140, 240, 340, 840 second probe

[0394] 50, 150 height adjustment member

[0395] 50a worktable contact surface

[0396] 50b, 150b unit contact surface

[0397] 70 worktable

[0398] 70a placement surface

[0399] 70s worktable inclined surface

[0400] 72 suction hole

[0401] 80 semiconductor laser device

[0402] 82 element

[0403] 82a element upper surface

[0404] 82b element lower surface

[0405] 82e light emitting point

[0406] 83 second electrode

[0407] 84 subassembly

[0408] 84a upper surface

[0409] 84b lower surface

[0410] 85 first electrode

[0411] 90 measuring device

[0412] 92 light receiving portion

[0413] 123a, 123c, 123e, 223a, 223c guide member

[0414] 123b, 123d, 223b spacer

[0415] 126aa, 126ca, 126ea, 226aa, 226ca first guide hole

[0416] 126ba, 126da, 226ba first spacer hole

[0417] 156 positioning portion

[0418] 426P first protrusion

[0419] 426w first inner wall

[0420] 521t, 621t upper surface

[0421] 523a, 623a first upper surface

[0422] 523b, 623b second upper surface

[0423] 524a, 624a first lower surface

[0424] 524b, 624b second lower surface

[0425] 830A, 840A shaft

[0426] 1035 first elastic mechanism

[0427] 1036 first housing

[0428] 1037 first elastic member

[0429] 1045 second elastic mechanism

[0430] 1046 second housing

[0431] 1047 second elastic member

[0432] Fm frame

[0433] LB laser beam

[0434] Pm push rod

Claims

1. A probe unit including a part of a current circuit for supplying a current to an examination object, characterized by comprising: a first probe and a second probe included in the current circuit and having elastic restoring force; a probe fixing member that fixes the first probe and the second probe; a probe passing member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with a first passing hole and a second passing hole through which the first probe and the second probe respectively pass; and a first elastic member and a second elastic member fixed to the probe fixing member, wherein the probe passing member has a facing surface facing the examination object through which the first probe and the second probe pass, wherein a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in a vertical direction with respect to the probe fixing member, wherein a lower end of the first probe is positioned lower than a lower end of the second probe in a state in which the first probe and the second probe are not in contact with the examination object, wherein the first probe is fixed to the probe fixing member via the first elastic member, wherein the second probe is fixed to the probe fixing member via the second elastic member, wherein at least one of the first elastic member and the second elastic member is stretchable and contractable in a direction including a component of the vertical direction, wherein at least one of a distance between a position of an upper end and a position of a lower end of the first probe and a distance between a position of an upper end and a position of a lower end of the second probe is greater than 0 in a plan view, and wherein a distance between the upper end of the first probe and the upper end of the second probe is greater than a distance between the lower end of the first probe and the lower end of the second probe in the plan view.

2. The probe unit according to claim 1, characterized in that at least one of the first elastic member and the second elastic member is stretchable and contractable in a direction inclined with respect to the vertical direction.

3. The probe unit according to claim 1, characterized by comprising at least one of a plurality of the first probes and a plurality of the second probes.

4. The probe unit according to claim 1, characterized in that the probe passing member has a plurality of guide members disposed apart from each other in the vertical direction, and in that a first guide hole through which the first probe passes is formed in each of the plurality of guide members.

5. A probe unit including a part of a current circuit for supplying a current to an examination object, characterized by comprising: a first probe and a second probe included in the current circuit and having elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe passing member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with a first passing hole and a second passing hole through which the first probe and the second probe respectively pass, wherein the probe passing member has a facing surface facing the examination object through which the first probe and the second probe pass, wherein a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in a vertical direction with respect to the probe fixing member. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ the lower end of the first probe is lower than the lower end of the second probe in a state where the first probe and the second probe are not in contact with the examination object; at least one of the first probe and the second probe exhibits a buckling phenomenon; the first probe has a first offset portion offset in a first offset direction with respect to the lower end of the first probe in plan view; the second probe has a second offset portion offset in a second offset direction with respect to the lower end of the second probe in plan view; the first offset portion includes the upper end of the first probe, which is inclined with respect to the vertical direction; the second offset portion includes the upper end of the second probe, which is inclined with respect to the vertical direction; the probe unit includes at least one of a plurality of the first probes electrically connected in parallel to each other and inclined in the first offset direction, and a plurality of the second probes electrically connected in parallel to each other and inclined in the second offset direction.

6. The probe unit according to claim 5, wherein the first offset direction and the second offset direction are not parallel to the arrangement direction of the first probe and the second probe; the first offset direction is opposite to the second offset direction.

7. The probe unit according to claim 6, wherein at least one of a plurality of the first probes and a plurality of the second probes is included.

8. The probe unit according to claim 6, wherein the probe-through member has a plurality of guide members arranged apart from each other in the vertical direction; a first guide hole through which the first probe passes is formed in each of the plurality of guide members.

9. A probe unit including a portion of a current circuit for supplying a current to an examination object, characterized by comprising: a first probe and a second probe included in the current circuit and having an elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe-through member arranged apart from the probe fixing member below the probe fixing member and having a first through hole and a second through hole through which the first probe and the second probe respectively pass; the probe-through member has an opposing surface opposite the examination object through which the first probe and the second probe pass; a portion of the first probe and the second probe that protrudes downward from the opposing surface is movable in the vertical direction with respect to the probe fixing member; the lower end of the first probe is lower than the lower end of the second probe in a state where the first probe and the second probe are not in contact with the examination object; the spring constant of the second probe is smaller than the spring constant of the first probe.

10. The probe unit according to claim 9, wherein the elastic modulus of the first probe and the second probe is the same; the second probe is thinner than the first probe, or the length of the second probe from the probe fixing member to the probe-through member is longer than the length of the first probe from the probe fixing member to the probe-through member.

11. The probe unit according to claim 9 or 10, wherein ​ a first elastic member and a second elastic member fixed to the probe fixing member; the first probe is fixed to the probe fixing member via the first elastic member; the second probe is fixed to the probe fixing member via the second elastic member.

12. The probe unit according to claim 9 or 10, wherein at least one of the first probe and the second probe exhibits a buckling phenomenon.

13. The probe unit according to claim 12, wherein the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in plan view; the second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in plan view; the first offset portion includes an upper end of the first probe inclined with respect to the vertical direction; the second offset portion includes an upper end of the second probe inclined with respect to the vertical direction.

14. The probe unit according to claim 9 or 10, wherein the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in plan view; the second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in plan view; at least one of a distance between a position of the upper end and a position of the lower end of the first probe in plan view and a distance between a position of the upper end and a position of the lower end of the second probe is 0.

15. A probe unit including a portion of a current circuit for supplying a current to an examination object, characterized by comprising: a first probe and a second probe included in the current circuit and having an elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass; the probe through member has a facing surface facing the examination object through which the first probe and the second probe pass; a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in the vertical direction with respect to the probe fixing member; a lower end of the first probe is lower than a lower end of the second probe in a state in which the first probe and the second probe are not in contact with the examination object; a radius of curvature of the lower end of the second probe is larger than a radius of curvature of the lower end of the first probe.

16. The probe unit according to claim 15, wherein a first elastic member and a second elastic member fixed to the probe fixing member; the first probe is fixed to the probe fixing member via the first elastic member; the second probe is fixed to the probe fixing member via the second elastic member.

17. The probe unit according to claim 15, wherein at least one of the first probe and the second probe exhibits a buckling phenomenon.

18. The probe unit according to claim 17, wherein ​ The first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; The second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; The first offset portion includes an upper end of the first probe, which is inclined with respect to the vertical direction; The second offset portion includes an upper end of the second probe, which is inclined with respect to the vertical direction.

19. The probe unit according to claim 15, wherein The first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; The second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; At least one of a distance between a position of the upper end and a position of the lower end of the first probe in the plan view and a distance between a position of the upper end and a position of the lower end of the second probe is 0.

20. A probe unit including a part of a current circuit for supplying a current to an examination object, characterized by comprising: provided with: a first probe and a second probe included in the current circuit and having elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member apart from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass; the probe through member has a facing surface facing the examination object through which the first probe and the second probe pass; a portion of the first probe and the second probe protruding downward from the facing surface is movable in the vertical direction with respect to the probe fixing member; a lower end of the first probe is lower than a lower end of the second probe in a state in which the first probe and the second probe do not contact the examination object; the probe through member has a plurality of guide members disposed apart from each other in the vertical direction; a first guide hole through which the first probe passes is formed in each of the plurality of guide members; a gap between the first guide hole of the guide member closest to the probe fixing member among the plurality of guide members and the first probe is greater than a gap between the first guide hole of the guide member farthest from the probe fixing member among the plurality of guide members and the first probe.

21. The probe unit according to claim 20, wherein first and second elastic members are fixed to the probe fixing member; the first probe is fixed to the probe fixing member via the first elastic member; the second probe is fixed to the probe fixing member via the second elastic member.

22. The probe unit according to claim 20, wherein at least one of the first probe and the second probe exhibits buckling phenomenon.

23. The probe unit according to claim 22, wherein the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; The second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; The first offset portion includes an upper end of the first probe, which is inclined with respect to the up-down direction; The second offset portion includes an upper end of the second probe, which is inclined with respect to the up-down direction.

24. The probe unit according to claim 20, wherein The first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; The second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; At least one of a distance between a position of the upper end of the first probe and a position of the lower end of the first probe in the plan view and a distance between a position of the upper end of the second probe and a position of the lower end of the second probe in the plan view is 0.

25. A probe unit including a part of a current circuit for supplying a current to an examination object, characterized by comprising: provided with: a first probe and a second probe included in the current circuit and having an elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member apart from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass; the probe through member has a facing surface facing the examination object through which the first probe and the second probe pass; a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in the up-down direction with respect to the probe fixing member; a lower end of the first probe is lower than a lower end of the second probe in a state in which the first probe and the second probe do not contact the examination object; the probe through member has a plurality of guide members disposed apart from each other in the up-down direction; a first guide hole through which the first probe passes is formed in each of the plurality of guide members; a thickness of a guide member of the plurality of guide members that is closest to the probe fixing member is greater than a thickness of a guide member of the plurality of guide members that is farthest from the probe fixing member.

26. The probe unit according to claim 25, characterized by comprising a first elastic member and a second elastic member fixed to the probe fixing member; the first probe is fixed to the probe fixing member via the first elastic member; the second probe is fixed to the probe fixing member via the second elastic member.

27. The probe unit according to claim 25, characterized in that at least one of the first probe and the second probe exhibits a buckling phenomenon.

28. The probe unit according to claim 27, wherein The first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; The second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; The first offset portion includes an upper end of the first probe, which is inclined with respect to the up-down direction; The second offset portion includes an upper end of the second probe, which is inclined with respect to the up-down direction. The second offset portion includes an upper end of the second probe, and is inclined with respect to the up-down direction.

29. The probe unit according to claim 25, wherein The first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in plan view; The second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in plan view; At least one of a distance between a position of an upper end and a position of a lower end of the first probe in plan view and a distance between a position of an upper end and a position of a lower end of the second probe is 0.

30. A probe unit including a portion of a current circuit for supplying a current to an examination object, characterized by provided with: a first probe and a second probe included in the current circuit and having elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member apart from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass; the probe through member has a facing surface facing the examination object through which the first probe and the second probe pass; a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in the up-down direction with respect to the probe fixing member; a lower end of the first probe is lower than a lower end of the second probe in a state in which the first probe and the second probe do not contact the examination object; the probe through member has a first inner wall that surrounds the first through hole, and the first inner wall has one or more first protrusions that smoothly protrude toward the first through hole in plan view of the probe through member.

31. The probe unit according to claim 30, wherein provided with a first elastic member and a second elastic member fixed to the probe fixing member; the first probe is fixed to the probe fixing member via the first elastic member; the second probe is fixed to the probe fixing member via the second elastic member.

32. The probe unit according to claim 30, wherein at least one of the first probe and the second probe exhibits buckling phenomenon.

33. The probe unit according to claim 32, wherein the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in plan view; the second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in plan view; the first offset portion includes an upper end of the first probe, and is inclined with respect to the up-down direction; the second offset portion includes an upper end of the second probe, and is inclined with respect to the up-down direction.

34. The probe unit according to claim 30, wherein the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in plan view; the second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in plan view; At least one of a distance between a position of an upper end of the first probe and a position of a lower end of the first probe, and a distance between a position of an upper end of the second probe and a position of a lower end of the second probe is 0.

35. A probe unit comprising a part of a current circuit for supplying a current to an examination object, characterized by comprising: provided with: a first probe and a second probe included in the current circuit, having an elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member apart from the probe fixing member, formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass; the probe through member has a facing surface facing the examination object through which the first probe and the second probe pass; a portion of the first probe and the second probe protruding downward from the facing surface is movable in the vertical direction with respect to the probe fixing member; in a state in which the first probe and the second probe do not contact the examination object, a lower end of the first probe is lower than a lower end of the second probe; the facing surface of the probe through member has a through member inclined surface inclined with respect to the vertical direction; the through member inclined surface rises away from the first through hole and the second through hole.

36. The probe unit according to claim 35, characterized in that: the through member inclined surface is a light reflection suppression surface.

37. The probe unit according to claim 35 or 36, characterized by comprising: a first elastic member and a second elastic member fixed to the probe fixing member; the first probe is fixed to the probe fixing member via the first elastic member; the second probe is fixed to the probe fixing member via the second elastic member.

38. The probe unit according to claim 35 or 36, characterized in that: at least one of the first probe and the second probe exhibits a buckling phenomenon.

39. The probe unit according to claim 38, characterized in that: the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; the second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; the first offset portion includes an upper end of the first probe, inclined with respect to the vertical direction; the second offset portion includes an upper end of the second probe, inclined with respect to the vertical direction.

40. The probe unit according to claim 35 or 36, characterized in that: the first probe has a first offset portion offset in a first offset direction with respect to a lower end of the first probe in a plan view; the second probe has a second offset portion offset in a second offset direction with respect to a lower end of the second probe in a plan view; at least one of a distance between a position of an upper end of the first probe and a position of a lower end of the first probe, and a distance between a position of an upper end of the second probe and a position of a lower end of the second probe is 0.

41. An examination apparatus characterized by comprising: provided with: A probe unit including a part of a current circuit for supplying a current to an inspection object; A stage having a placement surface on which the inspection object is placed; and A height adjustment member disposed between the probe unit and the stage; The probe unit includes: First and second probes included in the current circuit and having elastic restoring force; A probe fixing member that fixes the first and second probes; and A probe through member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with first and second through holes through which the first and second probes respectively pass; The probe through member has a facing surface facing the inspection object through which the first and second probes pass; A portion of the first and second probes protruding downward from the facing surface is movable in the vertical direction with respect to the probe fixing member; In a state in which the first and second probes are not in contact with the inspection object, a lower end of the first probe is lower than a lower end of the second probe; The height adjustment member is disposed at the facing surface of the probe unit; A stage contact surface of the height adjustment member that is in contact with the stage is a rough surface.

42. An inspection apparatus characterized by comprising: A probe unit including a part of a current circuit for supplying a current to an inspection object; A stage on which the inspection object is disposed; and A height adjustment member disposed between the probe unit and the stage; The probe unit includes: First and second probes included in the current circuit and having elastic restoring force; A probe fixing member that fixes the first and second probes; and A probe through member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with first and second through holes through which the first and second probes respectively pass; The probe through member has a facing surface facing the inspection object through which the first and second probes pass; A portion of the first and second probes protruding downward from the facing surface is movable in the vertical direction with respect to the probe fixing member; In a state in which the first and second probes are not in contact with the inspection object, a lower end of the first probe is lower than a lower end of the second probe; The height adjustment member is disposed at a placement surface of the stage; At least one of a unit contact surface of the height adjustment member that is in contact with the probe unit and the facing surface of the probe unit that faces the adjustment member is a rough surface.

43. An inspection apparatus characterized by comprising: A probe unit including a part of a current circuit for supplying a current to an inspection object; A stage having a placement surface on which the inspection object is placed; A height adjustment member disposed between the probe unit and the stage; A unit support member that supports the probe unit; A unit moving member that moves the unit support member; ​ ​ A slide rail slidably connects the unit support member to the unit moving member in the vertical direction. A connection spring connects the probe unit to the unit moving member. The probe unit includes: First and second probes included in the current circuit and having elastic restoring force; A probe fixing member that fixes the first and second probes; and A probe through member disposed below the probe fixing member and having first and second through holes through which the first and second probes pass, respectively. The probe through member has a facing surface facing the inspection object through which the first and second probes pass. The first and second probes are movable in the vertical direction relative to the probe fixing member. In a state in which the first and second probes do not contact the inspection object, the lower end of the first probe is lower than the lower end of the second probe. The height adjustment member is disposed on the facing surface of the probe unit.

44. An inspection apparatus comprising: A probe unit including a portion of a current circuit that supplies current to an inspection object; A stage having a placement surface on which the inspection object is placed; and A height adjustment member disposed between the probe unit and the stage; The probe unit includes: First and second probes included in the current circuit and having elastic restoring force; A probe fixing member that fixes the first and second probes; and A probe through member disposed below the probe fixing member and having first and second through holes through which the first and second probes pass, respectively. The probe through member has a facing surface facing the inspection object through which the first and second probes pass. The first and second probes are movable in the vertical direction relative to the probe fixing member. In a state in which the first and second probes do not contact the inspection object, the lower end of the first probe is lower than the lower end of the second probe. The height adjustment member is disposed on the facing surface of the probe unit. The placement surface has a stage inclined surface inclined with respect to the vertical direction. The stage inclined surface descends as it approaches an end of the placement surface.

45. The inspection apparatus according to claim 44, wherein The stage inclined surface is a light reflection suppression surface.

46. An inspection system comprising: An inspection apparatus; and A conveyance apparatus that conveys the inspection apparatus; The inspection apparatus includes: A probe unit including a portion of a current circuit that supplies current to an inspection object; A stage having a placement surface on which the inspection object is placed; and A height adjustment member disposed between the probe unit and the stage; The probe unit includes: First and second probes included in the current circuit and having elastic restoring force; A probe fixing member that fixes the first and second probes; and A probe through member disposed below the probe fixing member and having first and second through holes through which the first and second probes pass, respectively. The probe through member has a facing surface facing the inspection object through which the first and second probes pass. The first and second probes are movable in the vertical direction relative to the probe fixing member. In a state in which the first and second probes do not contact the inspection object, the lower end of the first probe is lower than the lower end of the second probe. The height adjustment member is disposed on the facing surface of the probe unit. The first probe and the second probe are included in the current circuit and have elastic restoring force. A probe fixing member fixes the first probe and the second probe; A probe through member is disposed below the probe fixing member and has a first through hole and a second through hole through which the first probe and the second probe pass, respectively. The probe through member has a facing surface opposite to the inspection object through which the first probe and the second probe pass; The first probe and the second probe are movable in the vertical direction with respect to the probe fixing member; The lower end of the first probe is lower than the lower end of the second probe when the first probe and the second probe are not in contact with the inspection object; The height adjustment member is disposed on the facing surface of the probe unit; The inspection device is transported when the first probe and the second probe are in contact with the inspection object.

47. The inspection system according to claim 46, wherein The first probe has a first offset portion offset in a first offset direction with respect to the lower end of the first probe in plan view; The second probe has a second offset portion offset in a second offset direction with respect to the lower end of the second probe in plan view; The first offset direction and the second offset direction are parallel to the transport direction of the inspection device.

48. The inspection system according to claim 46, wherein The first probe has a first offset portion offset in a first offset direction with respect to the lower end of the first probe in plan view; The second probe has a second offset portion offset in a second offset direction with respect to the lower end of the second probe in plan view; The first offset direction and the second offset direction are parallel to the maximum acceleration direction of the inspection device.

49. The inspection system according to claim 46, wherein The inspection device has a moving mechanism that moves the probe unit in a direction perpendicular to the transport direction of the inspection device.

50. The inspection system according to claim 46, wherein The first probe has a first offset portion offset in a first offset direction with respect to the lower end of the first probe in plan view; The second probe has a second offset portion offset in a second offset direction with respect to the lower end of the second probe in plan view; The first offset direction and the second offset direction are parallel to the moving direction of the probe unit.

51. The inspection system according to claim 46, wherein The stage has a suction hole that suctions the inspection object; The inspection device has a frame that surrounds the inspection object suctioned to the stage; The inspection device adjusts the position of the inspection object by moving the frame.

52. The inspection system according to claim 46, wherein The inspection object has a first electrode contacted by the lower end of the first probe and a second electrode contacted by the lower end of the second probe; The first electrode is positioned lower than the second electrode. The first probe and the second probe are positioned so that a difference in a vertical direction between a lower end of the first probe and a lower end of the second probe is greater than a difference in the vertical direction between the first electrode and the second electrode.

53. The inspection system according to claim 46, wherein the inspection object includes a semiconductor laser element of an edge-emitting type; the opposing surface of the probe through member has a through member inclined surface inclined with respect to the vertical direction; the through member inclined surface rises as it moves away from the first through hole and the second through hole.

54. The inspection system according to claim 53, wherein the through member inclined surface is a light reflection suppression surface.

55. The inspection system according to claim 46, wherein the inspection object includes a semiconductor laser element of an edge-emitting type; the placement surface has a stage inclined surface inclined with respect to the vertical direction; the stage inclined surface descends as it approaches an end of the placement surface.

56. The inspection system according to claim 55, wherein the stage inclined surface is a light reflection suppression surface.

57. An inspection method of inspecting a characteristic of an inspection object by supplying a current to the inspection object, characterized by the inspection object having: a sub-assembly having an upper surface; and a device having a device upper surface, disposed on the upper surface of the sub-assembly, to which the current is supplied; the sub-assembly having a first electrode disposed on the upper surface; the device having a second electrode disposed on the device upper surface; the inspection method including: a first contact process of bringing a first probe into contact with the first electrode; and a second contact process of, after the first contact process, bringing a second probe into contact with the second electrode while the first probe is in contact with the first electrode; the first probe and the second probe having an elastic restoring force and being included in a current circuit that supplies the current to the inspection object.

58. An inspection method of inspecting a characteristic of an inspection object by supplying a current to the inspection object, characterized by the inspection object having: a sub-assembly having an upper surface; and a device having a device upper surface, disposed on the upper surface of the sub-assembly, to which the current is supplied; the sub-assembly having a first electrode disposed on the upper surface; the device having a second electrode disposed on the device upper surface; the inspection method including: a supply process of supplying the current to the inspection object while a first probe is in contact with the first electrode and a second probe is in contact with the second electrode; a second separation process of, after the supply process, separating the second probe from the second electrode; and a first separation process of, after the second separation process, separating the first probe from the first electrode; the first probe and the second probe having an elastic restoring force and being included in a current circuit that supplies the current to the inspection object.

59. An inspection method of inspecting a characteristic of an inspection object by supplying a current to the inspection object using an inspection apparatus, the inspection apparatus including: a probe unit including a part of a current circuit for supplying the current to the inspection object; a stage on which the inspection object is placed; and a height adjustment member disposed between the probe unit and the stage; the inspection method characterized in that the probe unit includes: a first probe and a second probe included in the current circuit and having elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass, the probe through member has a facing surface facing the inspection object through which the first probe and the second probe pass, a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in a vertical direction with respect to the probe fixing member, in a state in which the first probe and the second probe are not in contact with the inspection object, a lower end of the first probe is lower than a lower end of the second probe, the height adjustment member is disposed on a placement surface of the stage, the inspection object includes: a sub-assembly having an upper surface; and a component having a component upper surface and disposed on the upper surface of the sub-assembly and supplied with the current, the sub-assembly has a first electrode disposed on the upper surface, the component has a second electrode disposed on the component upper surface, and the inspection method includes: a first contact process of bringing the first probe into contact with the first electrode; and a second contact process of bringing the second probe into contact with the second electrode after the first contact process in a state in which the first probe is in contact with the first electrode.

60. An inspection method of inspecting a characteristic of an inspection object by supplying a current to the inspection object using an inspection apparatus, the inspection apparatus including: a probe unit including a part of a current circuit for supplying the current to the inspection object; a stage on which the inspection object is placed; and a height adjustment member disposed between the probe unit and the stage; the inspection method characterized in that the probe unit includes: a first probe and a second probe included in the current circuit and having elastic restoring force; a probe fixing member that fixes the first probe and the second probe; and a probe through member disposed below the probe fixing member so as to be apart from the probe fixing member and formed with a first through hole and a second through hole through which the first probe and the second probe respectively pass, the probe through member has a facing surface facing the inspection object through which the first probe and the second probe pass, a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in a vertical direction with respect to the probe fixing member, ​ The lower end of the first probe is lower than the lower end of the second probe in a state in which the first probe and the second probe are not in contact with the inspection object; The height adjustment member is disposed on a placement surface of the worktable; The inspection object has: a sub-assembly having an upper surface; and a component having a component upper surface, disposed on the upper surface of the sub-assembly, to which the electric current is supplied; The sub-assembly has a first electrode disposed on the upper surface; The component has a second electrode disposed on the component upper surface; The inspection method includes: a supply process of supplying the electric current to the inspection object in a state in which the first probe is in contact with the first electrode and the second probe is in contact with the second electrode; a second separation process of separating the second probe from the second electrode after the supply process; and a first separation process of separating the first probe from the first electrode after the second separation process.

61. A manufacturing method of a semiconductor laser device, comprising: an assembly process of assembling the semiconductor laser device; and an inspection process of inspecting the semiconductor laser device as the inspection object using the inspection method according to claim 57 or 58; The component is a semiconductor laser component. ​ ​

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