Gas inlet structure of a chemical vapor deposition device and chemical vapor deposition device

Abstract

The present invention relates to an air inlet structure of a chemical vapor deposition device and a chemical vapor deposition device. The air inlet structure includes: a second intake pipe and a first intake pipe. The second intake pipe is arranged around the first intake pipe, so that the introduced protective gas surrounds the introduced gas to be reacted. Through the air inlet structure and the chemical vapor deposition device of the present invention, on the one hand, the introduction of the protective gas can keep the gas at the outlet end of the first intake pipe at a slightly positive pressure compared to the inside of the reaction chamber, reducing the situation that the deposited atoms inside the reaction chamber diffuse to the reaction deposition at the outlet end of the first intake pipe, and significantly reducing the blockage probability of the outlet end of the first intake pipe; on the other hand, the protective gas can evenly wrap the reaction gas inside, avoiding the rapid diffusion of the reaction gas and reacting to form solid particles before reaching the substrate position, resulting in the problem of uneven growth of the material film layer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an air intake structure of a chemical vapor deposition device and a chemical vapor deposition device. Background Art

[0002] At present, the main silicon carbide component preparation technology is HTCVD (high temperature chemical vapor deposition) technology, which uses the precursor to continuously decompose, react and deposit in a high-temperature growth furnace to obtain the desired silicon carbide material. Typical silicon carbide material chemical vapor deposition equipment usually includes an air inlet, a substrate device, a heating device and an exhaust port. With the continuous advancement of semiconductor manufacturing processes, the continuous reduction of device line widths has put forward higher and higher requirements for semiconductor components, which are mainly reflected in the precise control of chemical vapor deposition gas, temperature and pressure parameters, among which the stable delivery of precursors and other reaction gases is particularly critical.

[0003] In the typical high-temperature chemical vapor deposition process of preparing silicon carbide materials, the reaction gas is fed into the reaction chamber of the equipment, and the temperature in the reaction chamber is raised to the reaction temperature by a heating device, and the silicon carbide material is deposited on the surface of the substrate. However, in actual production, it is found that when preparing thick-film silicon carbide materials, the temperature of the air inlet increases due to the influence of thermal radiation in the furnace, and coupled with the long process cycle, silicon carbide or other solid deposits are often deposited at the air inlet. As the solid deposits at the air inlet gradually increase, the gas delivery path will change and affect the process. In severe cases, it may even cause the air inlet to be blocked and cause a process accident. In addition, the gas reacts prematurely to form solid particles, resulting in uneven growth of the material film layer. Summary of the invention

[0004] In view of this, the present invention provides an air intake structure of a chemical vapor deposition device and a chemical vapor deposition device to solve the above problems.

[0005] In a first aspect, the present invention provides an air intake structure of a chemical vapor deposition device, comprising:

[0006] A first gas inlet pipe, used for introducing a gas to be reacted and a carrier gas thereof into a reaction chamber of the chemical vapor deposition device;

[0007] The second air inlet pipe is used to introduce a protective gas into the reaction chamber. The second air inlet pipe is arranged around the first air inlet pipe so that the protective gas surrounds and wraps the gas to be reacted.

[0008] The air intake structure provided by the present invention, on the one hand, the introduction of protective gas can make the gas at the outlet end of the first air inlet pipe maintain a slightly positive pressure compared to the interior of the reaction chamber, reducing the diffusion of deposited atoms inside the reaction chamber to the outlet end of the first air inlet pipe for reaction and deposition, and significantly reducing the probability of blockage of the outlet end of the first air inlet pipe; on the other hand, the protective gas can evenly wrap the reaction gas inside, avoiding rapid diffusion of the reaction gas, reacting to form solid particles before reaching the substrate position, and causing uneven growth of the material film layer.

[0009] In an optional embodiment, the outlet end of the first air inlet pipe is tapered, and the inner diameter decreases in a direction approaching the reaction chamber.

[0010] In this embodiment, the flow velocity of the gas flow can be increased by designing a smaller inner diameter of the pipe along the flow direction of the gas flow, the purpose of which is to increase the flow velocity of the reaction gas when it is discharged from the first air inlet pipe, to avoid the flow velocity being too low and being blocked by the protective gas, and to prevent it from being affected by the protective gas and having difficulty in reaching the center of the reaction chamber smoothly.

[0011] In an optional embodiment, the first air inlet pipe includes a main body and a nozzle connected to one end of the main body; the inner wall of the nozzle is conical, and the inner diameter decreases in a direction approaching the reaction chamber.

[0012] In this embodiment, since the inner diameter of the tapered inner wall of the nozzle gradually decreases in the direction approaching the reaction chamber, the nozzle can increase the flow rate of the gas flow.

[0013] In an optional embodiment, the inner diameter of the second air inlet pipe is larger than the outer diameter of the first air inlet pipe, the second air inlet pipe is sleeved on the outside of the first air inlet pipe, and a gap formed between the inner wall of the second air inlet pipe and the outer wall of the first air inlet pipe is used for the protective gas to flow.

[0014] In this embodiment, a double-layer sleeve design is adopted, that is, the second air inlet pipe is sleeved on the outside of the first air inlet pipe, so that the reaction gas can flow inside the first air inlet pipe and the protective gas can flow in the outer circle, so that the two gases can be stably delivered to the reaction chamber at the same time.

[0015] In an optional embodiment, the end surface of the air outlet end of the second air inlet pipe protrudes from the end surface of the air outlet end of the first air inlet pipe.

[0016] In this embodiment, since the end face of the outlet end of the second air inlet pipe protrudes beyond the end face of the outlet end of the first air inlet pipe, when the gas to be reacted is discharged from the outlet end of the first air inlet pipe, there is already a large amount of protective gas distributed around it, which can avoid deposition at the outlet end of the first air inlet pipe due to insufficient protective gas.

[0017] In an optional embodiment, the second air inlet pipe includes a main body portion and an extension sleeve connected to one end of the main body portion, and the extension sleeve forms an air outlet end of the second air inlet pipe.

[0018] In this embodiment, the second air inlet pipe is a split structure, which can reduce the manufacturing difficulty. Its function is to set an extension sleeve separately to facilitate manufacturing, and the extension sleeve can be easily installed to the position protruding from the end face of the air outlet end of the first air inlet pipe.

[0019] In an optional embodiment, one end of the second air inlet pipe away from the reaction chamber is sealed by a closing cover, and a protective gas inlet interface is provided on the outer wall of the second air inlet pipe or the closing cover.

[0020] In this embodiment, the closing cover serves to connect the second air inlet pipe with the first air inlet pipe on the one hand, and on the other hand closes one end of the gap so that the protective gas introduced from the protective gas inlet interface can only be discharged into the reaction chamber from the other end of the gap.

[0021] In an optional embodiment, the closing cover is located outside the air intake end of the first air intake pipe, and the outer wall of the first air intake pipe is fixed to the inner wall of the second air intake pipe via a supporting structure.

[0022] In this embodiment, a support structure is provided on the outer wall of the first air intake pipe and fixed to the inner wall of the second air intake pipe, thereby providing a uniform support force for the first air intake pipe and preventing the first air intake pipe from bending under long-term use.

[0023] In an optional embodiment, the outlet ends of the first air inlet pipe and the second air inlet pipe are made of graphite.

[0024] In this embodiment, the outlet ends of the first air inlet pipe and the second air inlet pipe are made of graphite material, which is resistant to high temperature and corrosion.

[0025] In a second aspect, the present invention provides a chemical vapor deposition device, comprising the gas intake structure of the first aspect.

[0026] In an optional embodiment, the chemical vapor deposition equipment includes a furnace body, the interior of which forms the reaction chamber; the second air inlet pipe is connected to the side wall of the furnace body, and the air outlet end of the second air inlet pipe protrudes from the inner wall of the furnace body.

[0027] In this embodiment, the outlet end of the second air inlet pipe protrudes from the inner wall of the furnace body, which can reduce the heat radiation received by the outlet end of the first air inlet pipe.

[0028] In an optional embodiment, the chemical vapor deposition equipment includes several layers of substrates, and the several layers of substrates are arranged along the height direction of the chemical vapor deposition equipment; the air intake structure corresponds to the several layers of substrates arranged along the height direction of the chemical vapor deposition equipment.

[0029] In this embodiment, it can be ensured that each substrate has a relatively close gas inlet structure to provide it with reaction gas, which is conducive to relatively fast and uniform reaction deposition on the substrate.

[0030] In the air intake structure and chemical vapor deposition equipment provided by the present invention, the second air intake pipe is arranged around the first air intake pipe. When the protective gas is introduced into the second air intake pipe, the gas to be reacted is introduced into the first air intake pipe. When the gas to be reacted is discharged from the first air intake pipe into the reaction chamber, the protective gas surrounds the gas to be reacted. Therefore, on the one hand, the introduction of the protective gas can keep the gas at the outlet end of the first air intake pipe at a slightly positive pressure compared to the inside of the reaction chamber, reduce the diffusion of the deposited atoms inside the reaction chamber to the reaction deposition at the outlet end of the first air intake pipe, and significantly reduce the blockage probability of the outlet end of the first air intake pipe; on the other hand, the protective gas can evenly wrap the reaction gas inside, avoid the rapid diffusion of the reaction gas, and react to form solid particles before reaching the substrate position, resulting in the problem of uneven growth of the material film layer.

[0031] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0033] Figure 1 A schematic cross-sectional structure diagram of a chemical vapor deposition device provided in Embodiment 1 of the present invention;

[0034] Figure 2 A schematic diagram of an air intake structure of a chemical vapor deposition device provided in Embodiment 1 of the present invention;

[0035] Figure 3 A three-dimensional diagram of the air intake structure of a chemical vapor deposition device provided in Embodiment 3 of the present invention;

[0036] Figure 4 A cross-sectional view of the air intake structure of the chemical vapor deposition equipment provided in the third embodiment of the present invention.

[0037] The reference numerals in the figure are:

[0038] 1. Furnace body; 1-1. Reaction chamber;

[0039] 2. Air intake structure;

[0040] 2-1, second air inlet pipe; 2-2, first air inlet pipe; 2-3, protective gas inlet interface;

[0041] 2-4, supporting structure; 2-5, nozzle; 2-6, extension sleeve; 2-7, closing cover;

[0042] 3. Exhaust port;

[0043] 4. Substrate;

[0044] 5. Substrate support rod;

[0045] 6. Rotating column. DETAILED DESCRIPTION

[0046] The exemplary embodiments disclosed in the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the specific embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0047] In the following description, a large number of specific details are given to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0048] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0049] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present invention necessarily has the first element, component, region, layer or part.

[0050] Spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0051] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present invention. When used herein, the singular forms "a", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0052] In order to fully understand the present invention, detailed steps and detailed structures will be proposed in the following description to illustrate the technical solution of the present invention. The preferred embodiments of the present invention are described in detail below, but in addition to these detailed descriptions, the present invention may also have other implementations. Embodiment 1

[0053] This embodiment provides a chemical vapor deposition device, such as Figure 1 As shown, it has an air intake structure 2. Figure 2 As shown, the air intake structure 2 includes: a first air intake pipe 2-2 and a second air intake pipe 2-1.

[0054] The first air inlet pipe 2-2 is used to introduce the gas to be reacted and its carrier gas into the reaction chamber 1-1 of the chemical vapor deposition equipment; the second air inlet pipe 2-1 is used to introduce protective gas into the reaction chamber 1-1, and the second air inlet pipe 2-1 is arranged around the first air inlet pipe 2-2, so that the protective gas surrounds and wraps the gas to be reacted.

[0055] In this embodiment, the inlet end of the first inlet pipe 2-2 is used to connect to a gas supply device capable of providing the gas to be reacted, and the outlet end of the first inlet pipe 2-2 is connected to the reaction chamber 1-1. The outlet end of the second inlet pipe 2-1 is also connected to the reaction chamber 1-1.

[0056] When the protective gas is introduced into the second air inlet pipe 2-1, the gas to be reacted is introduced into the first air inlet pipe 2-2. When the gas to be reacted is discharged from the first air inlet pipe 2-2 into the reaction chamber 1-1, the protective gas surrounds the gas to be reacted and plays a certain protective role on the gas to be reacted. The protective effect means that under the wrapping effect of the protective gas, the gas to be reacted is not easy to undergo chemical vapor deposition reaction to produce solid particles.

[0057] In this embodiment, the inlet end of the first inlet pipe 2-2 refers to the end of the first inlet pipe 2-2 connected to the gas supply device for providing the gas to be reacted, and the outlet end of the first inlet pipe 2-2 refers to the end of the first inlet pipe 2-2 connected to the reaction chamber 1-1. Figure 1 As shown, the interior of the furnace body 1 is a reaction chamber 1-1. Figure 2 As shown, the right end of the first air inlet pipe 2-2 is its air outlet, and the left end is its air inlet. Figure 2 As shown, the right end of the second air inlet pipe 2-1 is its air outlet end.

[0058] The air intake structure and chemical vapor deposition equipment provided in this embodiment, on the one hand, the introduction of protective gas can make the gas at the outlet end of the first air inlet pipe 2-2 maintain a slightly positive pressure compared to the inside of the reaction chamber 1-1, reducing the diffusion of deposition atoms inside the reaction chamber 1-1 to the outlet end of the first air inlet pipe 2-2 for reaction deposition, and significantly reducing the probability of blockage of the outlet end of the first air inlet pipe 2-2; on the other hand, the protective gas can evenly wrap the reaction gas inside, avoiding rapid diffusion of the reaction gas, and reacting to form solid particles before reaching the substrate position, resulting in uneven growth of the material film layer.

[0059] Since the protective gas prevents the reaction gas from diffusing rapidly, fewer solid particles are formed before the reaction gas diffuses to the substrate, and the surface of the product deposited on the substrate is less likely to have particles, thereby improving the surface flatness of the final product.

[0060] In an optional embodiment, the temperature of the protective gas introduced from the second air inlet pipe 2-1 is lower than the decomposition temperature of the reaction gas. By continuously introducing the protective gas, the temperature of the gas to be reacted is hindered from rising, so that the temperature of the gas to be reacted is lower than its decomposition temperature when it is discharged from the first air inlet pipe 2-2 into the reaction chamber 1-1, thereby avoiding premature decomposition reaction and deposition at the pipe mouth. The temperature of the protective gas provided can be room temperature or lower than room temperature. The room temperature is usually 20°C to 25°C.

[0061] In an optional embodiment, if Figure 2 As shown, the outlet end of the first air inlet pipe 2-2 is tapered, and the inner diameter decreases in the direction close to the reaction chamber 1-1. In this embodiment, the air flow velocity can be increased by the design of decreasing the inner diameter of the pipe along the flow direction of the air flow, the purpose of which is to increase the flow velocity of the reaction gas when it is discharged from the first air inlet pipe 2-2, to avoid the flow velocity being too low and being blocked by the protective gas, and to prevent it from being affected by the protective gas and having difficulty in smoothly reaching the center of the reaction chamber 1-1.

[0062] In an optional embodiment, if Figure 2 As shown, the first air inlet pipe 2-2 is cylindrical as a whole, and the wall thickness of its main part remains unchanged. One end of the main part of the first air inlet pipe 2-2 is sleeved with the nozzle 2-5. The inner diameter of the nozzle 2-5 is smaller than the inner diameter of the main part of the first air inlet pipe 2-2. The inner wall of the nozzle 2-5 is conical, and the tip of the cone faces the outlet direction of the air flow. Since the inner diameter of the conical inner wall of the nozzle 2-5 gradually decreases in the direction close to the reaction chamber 1-1, the nozzle 2-5 can increase the air flow rate. The wall thickness of the main part of the first air inlet pipe 2-2 remains unchanged, and the nozzle 2-5 is processed separately to change the inner wall, which can reduce the process difficulty. It can be understood that in other embodiments, when the process difficulty is not considered, the nozzle 2-5 can also be connected to the main part of the first air inlet pipe 2-2 as a whole.

[0063] In an optional embodiment, if Figure 2 As shown, the inner diameter of the second air inlet pipe 2-1 is larger than the outer diameter of the first air inlet pipe 2-2, and the second air inlet pipe 2-1 is sleeved on the outside of the first air inlet pipe 2-2, and the gap formed between the inner wall of the second air inlet pipe 2-1 and the outer wall of the first air inlet pipe 2-2 is used for the circulation of protective gas. In this embodiment, a double-layer sleeve design is adopted, that is, the second air inlet pipe 2-1 is sleeved on the outside of the first air inlet pipe 2-2, so that the reaction gas can be circulated inside the first air inlet pipe 2-2 and the protective gas can be circulated in the outer circle, so that the two gases can be stably transported to the reaction chamber 1-1 at the same time. Since the gap is a complete circular ring, the circulating protective gas can be more fully distributed on the periphery of the reaction gas. It can be understood that under this double-layer sleeve design, the second air inlet pipe 2-1 and the first air inlet pipe 2-2 are preferably coaxially arranged, which can improve the uniformity of gas distribution. In other embodiments, the gap can also be a complete polygonal ring, such as a quadrilateral ring, a pentagonal ring, a hexagonal ring, etc.

[0064] In an optional embodiment, if Figure 2 As shown, the inner wall of the second air inlet pipe 2-1 is connected to the outer wall of the first air inlet pipe 2-2 through a closed cover 2-7. The closed cover 2-7 can close one end of the gap, which is equivalent to closing one end of the first air inlet pipe 2-2. A protective gas inlet interface 2-3 is provided on the outer wall of the second air inlet pipe 2-1. One end of the protective gas inlet interface 2-3 is used to connect a gas supply device that can provide protective gas, and the other end is connected to the gap. In this embodiment, the closed cover 2-7 plays a role of connecting the second air inlet pipe 2-1 and the first air inlet pipe 2-2 on the one hand, and closes one end of the gap on the other hand, so that the protective gas introduced from the protective gas inlet interface 2-3 can only be discharged from the other end of the gap into the reaction chamber 1-1. In other embodiments, the protective gas inlet interface 2-3 can also be set on the closed cover 2-7, which can simplify the side wall structure of the second air inlet pipe 2-1.

[0065] In an optional embodiment, the closing cover 2-7 is a flange structure, which is convenient for connecting or disconnecting the second air inlet pipe 2-1 and the first air inlet pipe 2-2. The sealing performance of the flange structure is reliable and can prevent gas leakage.

[0066] In an optional embodiment, if Figure 2As shown, the closing cover 2-7 is located outside the air inlet end of the first air inlet pipe 2-2, and the outer wall of the first air inlet pipe 2-2 is fixed to the inner wall of the second air inlet pipe 2-1 by the supporting structure 2-4. In this embodiment, although the closing cover 2-7 can play a role in supporting and fixing the first air inlet pipe 2-2, since the first air inlet pipe 2-2 is relatively long and the end away from the closing cover 2-7 lacks support, it may cause the tube body to bend under long-term use. If the first air inlet pipe 2-2 bends, it will cause the gap width to be uneven, which is not conducive to the protective gas to fully surround the reactive gas. Therefore, by providing a supporting structure 2-4 on the outer wall of the first air inlet pipe 2-2 and fixing it to the inner wall of the second air inlet pipe 2-1, a uniform supporting force is provided to the first air inlet pipe 2-2, thereby preventing the first air inlet pipe 2-2 from bending under long-term use. Preferably, as Figure 2 As shown, in this embodiment, the support structure 2-4 is arranged at the nozzle 2-5, because the nozzle 2-5 is the position of the first air inlet pipe 2-2 farthest from the closing cover 2-7, and the support effect is better at this position.

[0067] In an optional embodiment, if Figure 1 , Figure 2 As shown, the outlet end of the second air inlet pipe 2-1 is connected to the reaction chamber 1-1, and along the axial direction of the first air inlet pipe 2-2, the end face of the outlet end of the second air inlet pipe 2-1 protrudes from the end face of the outlet end of the first air inlet pipe 2-2. In this embodiment, since the end face of the outlet end of the second air inlet pipe 2-1 protrudes from the end face of the outlet end of the first air inlet pipe 2-2, when the gas to be reacted is discharged from the outlet end of the first air inlet pipe 2-2, a large amount of protective gas is distributed around it, which can avoid deposition at the outlet end of the first air inlet pipe 2-2 due to insufficient protective gas.

[0068] In an optional embodiment, if Figure 2 As shown, the second air inlet pipe 2-1 includes a main body and an extension sleeve 2-6 connected to one end of the main body, and the extension sleeve 2-6 forms the outlet end of the second air inlet pipe 2-1. In this embodiment, the second air inlet pipe 2-1 is a split structure, which can reduce the difficulty of manufacturing. Its function is to set the extension sleeve 2-6 separately for easy manufacturing, and the extension sleeve 2-6 is easy to install at a position protruding from the end surface of the outlet end of the first air inlet pipe 2-2.

[0069] In an optional embodiment, the main body of the first air inlet pipe 2-2 and the second air inlet pipe 2-1 is made of rust-proof metal material, such as stainless steel, which is easy to manufacture; the outlet ends of the first air inlet pipe 2-2 and the second air inlet pipe 2-1 are made of graphite material, preferably high-purity graphite material, which can withstand high temperatures and corrosion. Preferably, when the second air inlet pipe 2-1 adopts a split structure, the main body is made of rust-proof metal material, and the extension sleeve 2-6 is made of graphite material, the manufacturing difficulty can be reduced.

[0070] In an optional embodiment, if Figure 1 As shown, the chemical vapor deposition device of this embodiment includes a furnace body 1, and a reaction chamber 1-1 is formed inside the furnace body 1; a second air inlet pipe 2-1 is connected to the side wall of the furnace body 1, and the air outlet end of the second air inlet pipe 2-1 protrudes from the inner wall of the furnace body 1. In this embodiment, the air outlet end of the second air inlet pipe 2-1 protrudes from the inner wall of the furnace body 1 to reduce the heat radiation received by the air outlet end of the first air inlet pipe 2-2.

[0071] In an optional embodiment, if Figure 1 As shown, the chemical vapor deposition device of this embodiment includes several layers of substrates 4, and the several layers of substrates 4 are arranged along the height direction of the chemical vapor deposition device; the air intake structures 2 are arranged along the height direction of the chemical vapor deposition device corresponding to the several layers of substrates 4. In this embodiment, it can be ensured that each substrate 4 has a relatively close air intake structure 2 to provide it with reaction gas, which is conducive to relatively fast and uniform reaction deposition on the substrate 4.

[0072] In an optional embodiment, if Figure 1 As shown, the chemical vapor deposition equipment of this embodiment includes a furnace body 1, an air intake structure 2, an exhaust port 3, a substrate 4, a substrate support rod 5 and a rotating column 6. The reaction chamber 1-1 inside the furnace body 1 is used for reaction and deposition of the reaction gas, the air intake structure 2 is used for the reaction gas and the protective gas to pass into the reaction chamber 1-1, the exhaust port 3 is located at the lower position of the furnace body 1, and is used to discharge the mixed substance containing the unreacted precursor and other reaction gases, reaction products and other by-products from the furnace body 1, the substrate 4 is located inside the furnace body 1, and the material is deposited and grown on its surface, and the rotating column 6 is connected to the substrate 4 through the substrate support rod 5, so as to support the substrate 4 and drive the substrate 4 to rotate. Embodiment 2

[0073] This embodiment provides a process for depositing a product using the chemical vapor deposition equipment in the first embodiment.

[0074] The process comprises the following steps:

[0075] S1, the protective gas is introduced into the second gas inlet pipe 2-1 through the protective gas inlet interface 2-3 and discharged into the reaction chamber 1-1.

[0076] S2, the carrier gas carrying the precursor is transported to the interior of the reaction chamber 1-1 through the first air inlet pipe 2-2.

[0077] Among them, S2 can be performed at the same time as S1, or later than S1.

[0078] Under the process of this embodiment, because the first air inlet pipe 2-2 is under the continuous cooling effect of the protective gas introduced into the second air inlet pipe 2-1, at the outlet end of the first air inlet pipe 2-2, the precursor is not easily affected by the heat radiation in the furnace and causes premature decomposition reaction, thereby reducing the deposition of solid particles at the outlet end of the first air inlet pipe 2-2. In addition, because the protective gas is continuously filled into the second air inlet pipe 2-1 at a certain flow rate through the protective gas inlet interface 2-3, a slightly positive pressure is formed in the second air inlet pipe 2-1 and at the outlet end of the second air inlet pipe 2-1 relative to the reaction chamber 1-1, thereby preventing the thermally decomposed carbon and silicon atom groups in the reaction chamber 1-1 from diffusing to the outlet end of the first air inlet pipe 2-2, thereby preventing the occurrence of blockage at this position. In addition, the precursor is discharged from the outlet end of the first air inlet pipe 2-2 under the protection of the protective gas, and under the protection of the peripheral protective gas, the dispersion and pyrolysis of the reaction gas as soon as it enters the reaction chamber 1-1 can be reduced. This situation refers to the reactants reacting and forming solid particulate matter before they diffuse to the surface of the substrate 4, and diffusing to the surface of the substrate 4 with other reactants at the same time, resulting in poor deposition. In this embodiment, the protective gas can play a better supporting role, transporting the reaction gas to a position closer to the substrate 4 for pyrolysis, and the reaction gas can smoothly diffuse, react and deposit on the surface of the substrate 4, which helps to improve the uniformity of the product material.

[0079] For example, in this embodiment, the temperature in the furnace body 1 is 1200°C and the pressure is 500 Torr negative pressure during operation. Hydrogen is used as the carrier gas, hydrogen can be used as the protective gas, monomethyltrichlorosilane is used as the precursor, and hydrogen is used as the carrier gas to carry the monomethyltrichlorosilane mixed gas at a flow rate of 10 SLPM (stard liter per minute) through the first inlet pipe 2-2 to the inside of the reaction chamber 1-1. Hydrogen is used as a protective gas and is introduced into the reaction chamber 1-1 through the protective gas inlet interface 2-3 at a flow rate of 1 SLPM.

[0080] It can be understood that the above parameters are only process parameters of a specific product provided in this embodiment. In other embodiments, the process parameters should be changed according to product requirements. Embodiment 3

[0081] This embodiment provides a second air intake pipe 2-1 structure which is different from that of the first embodiment. Figure 3 , Figure 4 As shown, in this embodiment, the second air inlet pipe 2-1 is composed of three pipes with fan-shaped cross-sections with an arc of 120 degrees. The three pipes with fan-shaped cross-sections are arranged around the first air inlet pipe 2-2, and the air outlet ends of the pipes with fan-shaped cross-sections all protrude from the air outlet ends of the first air inlet pipe 2-2.

[0082] In this scheme, by arranging three pipes with fan-shaped cross sections around the first air inlet pipe 2-2, it can also be achieved that when the protective gas is introduced into the second air inlet pipe 2-1, the gas to be reacted is introduced into the first air inlet pipe 2-2, and when the gas to be reacted is discharged from the first air inlet pipe 2-2 into the reaction chamber 1-1, the protective gas surrounds the gas to be reacted. It can be understood that the pipe with a fan-shaped cross section with an arc of 120 degrees in this embodiment is only an example. In other embodiments, the specific cross-sectional shape of the pipe arranged around the first air inlet pipe 2-2 can also be rectangular, triangular, circular or irregular, and the number of arrangements is not limited to three, and can be two, four, five or more. For the gas supply of the pipeline, an air inlet interface can be set at the end or outer wall of each pipeline, and the reaction gas is introduced into the corresponding pipeline from each air inlet interface. It is also possible to set an air inlet interface only at the end or outer wall of one of the pipelines, and the other pipelines are connected through openings to obtain gas supply.

[0083] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present invention that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present invention and do not limit the scope of protection of the patent of the present invention.

Claims

1. A chemical vapor deposition device, characterized in that: It comprises a furnace body (1) and an air intake structure (2); a reaction chamber (1-1) is formed inside the furnace body (1); The air intake structure (2) comprises: A first gas inlet pipe (2-2) is used for introducing a gas to be reacted and a carrier gas thereof into the reaction chamber (1-1); A second air inlet pipe (2-1) is used to introduce a protective gas into the reaction chamber (1-1), the second air inlet pipe (2-1) being arranged around the first air inlet pipe (2-2) so that the protective gas surrounds and wraps the gas to be reacted; The second air inlet pipe (2-1) is connected to the side wall of the furnace body (1), the air outlet end of the second air inlet pipe (2-1) protrudes from the inner wall of the furnace body (1), and the end surface of the air outlet end of the second air inlet pipe (2-1) protrudes from the end surface of the air outlet end of the first air inlet pipe (2-2); The first air inlet pipe (2-2) comprises a first main body part and a nozzle (2-5) connected to one end of the first main body part, the inner diameter of the nozzle (2-5) being smaller than the inner diameter of the main body part; the inner wall of the nozzle (2-5) is tapered, and the inner diameter decreases in a direction approaching the reaction chamber (1-1); the second air inlet pipe (2-1) comprises a second main body part and an extension sleeve (2-6) connected to one end of the second main body part, the extension sleeve (2-6) forming the air outlet end of the second air inlet pipe (2-1); The process of using the chemical vapor deposition equipment to deposit products includes the following steps: S1, the protective gas is introduced into the second gas inlet pipe (2-1) through the protective gas inlet interface (2-3) and discharged into the reaction chamber (1-1); S2, a carrier gas carrying a precursor is transported to the interior of a reaction chamber (1-1) through a first air inlet pipe (2-2); S2 is performed later than S1.

2. The chemical vapor deposition equipment according to claim 1, characterized in that: One end of the second air inlet pipe (2-1) away from the reaction chamber (1-1) is sealed by a closing cover (2-7), and a protective gas inlet interface (2-3) is provided on the outer wall of the second air inlet pipe (2-1) or the closing cover (2-7).

3. The chemical vapor deposition equipment according to claim 1, characterized in that: A plurality of support structures (2-4) are provided between the outer wall of the first air intake pipe (2-2) and the inner wall of the second air intake pipe (2-1).

4. The chemical vapor deposition equipment according to claim 1, characterized in that: The chemical vapor deposition equipment comprises a plurality of layers of substrates (4), wherein the plurality of layers of substrates (4) are arranged along the height direction of the chemical vapor deposition equipment; and the air intake structure (2) is arranged along the height direction of the chemical vapor deposition equipment corresponding to the plurality of layers of substrates (4).

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