Multi-field regulated vector optoelectronic logic device and preparation method thereof
By integrating two-dimensional bismuth selenide material on an LNOI substrate, and utilizing laser position, power, and bias control, a multi-field controlled vector optoelectronic logic device is realized. This solves the problems of single function and wavelength limitation of existing optoelectronic logic devices, and enables multi-beam logic operations and ultra-wideband applications.
Patent Information
- Application Number
- CN202410759246.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-13
- Publication Date
- 2025-11-04
- Estimated Expiration
- 2044-06-13
AI Technical Summary
Existing optoelectronic logic devices can only perform single-function logic operations, and the wavelength of the input light is limited, making it impossible to implement more efficient and flexible logic algorithms, especially in communication band applications.
By integrating two-dimensional bismuth selenide material on an LNOI substrate, and by adjusting the position, power, and external bias of the laser source, combined with a digital source meter, a multi-field modulated vector optoelectronic logic device is realized, supporting the output of various logic functions.
It enables multi-beam logic value operations in the ultra-wideband 365nm-9.7μm range, supports various logic functions such as OR gate, XOR gate, and XNOR gate, and is suitable for communication and optical computing chip fields.
Smart Images
Figure CN118738168B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to a kind of vector optoelectronic logic devices, in particular to a kind of multi-field regulation vector optoelectronic logic device and preparation method thereof, belong to vector optoelectronic logic device technical field. BACKGROUND
[0002] In prior art, the logic device of light input electric output usually only has the design for basic linear logic function, and few development design scheme with more complex logic function, therefore, most of the current optoelectronic logic device can usually only realize single function logic operation, or can only be regulated by single logic input mode, and the wavelength of input light is usually limited to the working mechanism of device, such as back-to-back schottky effect, photovoltaic effect, most of which can only realize logic operation in visible band, and the most important communication band is usually infrared band, therefore, it cannot realize more efficient and flexible logic algorithm, and a kind of multi-field regulation vector optoelectronic logic device and preparation method thereof are designed to solve the above problems. SUMMARY
[0003] The main purpose of the present application is to provide a kind of multi-field regulation vector optoelectronic logic device and preparation method thereof.
[0004] The purpose of the present application can be achieved by adopting the following technical scheme:
[0005] A kind of multi-field regulation vector optoelectronic logic device, including LNOI substrate;
[0006] The top of LNOI substrate is paved with two-dimensional bismuth selenide material;
[0007] The top of two-dimensional bismuth selenide material is provided with source electrode on one side and drain electrode on the other side;
[0008] Digital source table is connected on source electrode and drain electrode;
[0009] LNOI substrate bottom and two-dimensional bismuth selenide material top respectively project two laser light sources.
[0010] Preferably, the LNOI substrate includes 6 μm thin film lithium niobate, 2 μm silicon dioxide and 500 μm block lithium niobate.
[0011] Preferably, the two-dimensional bismuth selenide material is two-dimensional nanosheet;
[0012] The thickness of two-dimensional bismuth selenide material is 1-100 nm.
[0013] Preferably, the material of source electrode and drain electrode is one or more combination of gold, chromium, silver and titanium.
[0014] A preparation method of a multi-field regulated vector optoelectronic logic device, comprising the following steps:
[0015] Step one: using chemical vapor deposition method to realize the growth of two-dimensional bismuth selenide material on a fluorophlogopite substrate;
[0016] Step two: transferring the two-dimensional bismuth selenide material to an LNOI substrate;
[0017] Step three: defining the top electrode area on the two-dimensional bismuth selenide material on the surface of the LNOI substrate by ultraviolet fixed-point lithography;
[0018] Step four: depositing metal and peeling off the top electrode area after lithography to obtain a top electrode layer.
[0019] Preferably, in step two, the transfer method adopts wet transfer and dry transfer.
[0020] Preferably, in step three, the top electrode area is defined by spin-coating ultraviolet photoresist on the substrate and drying, then using 365nm ultraviolet light for exposure treatment, and then sequentially performing drying, developing and fixing operations.
[0021] Preferably, in step four, the metal electrode is deposited by electron beam evaporation.
[0022] The application further provides an application method of the multi-field regulated vector optoelectronic logic device.
[0023] The beneficial technical effects of the application are as follows:
[0024] The multi-field regulated vector optoelectronic logic device and the preparation method thereof provided by the application integrate two-dimensional bismuth selenide material on an LNOI substrate, and utilize the sensitive characteristics of the two-dimensional bismuth selenide material photo-thermal-electric response to laser position, power and external bias to prepare a multi-field regulated vector optoelectronic logic device.
[0025] The vector optoelectronic logic device can realize different logic input values by regulating the laser source position, laser power and external bias, so as to realize different size and vector direction of the photoelectric current output value.
[0026] The application realizes the logical value operation of multiple beams by the simultaneous irradiation of two or multiple laser light sources, and specifically realizes the logical functions of OR gate, XOR gate and XNOR gate; the photo-thermal-electric response of the two-dimensional bismuth selenide material used in the application can work in an ultra-wide waveband of 365nm-9.7μm, and has great application value in the fields of communication, optical computing chip and high-speed information processing. BRIEF DESCRIPTION OF DRAWINGS
[0027] Figure 1 A schematic diagram of the vector optoelectronic logic device provided in the embodiment of the application is shown.
[0028] Figure 2 A multi-field regulation mode of the vector optoelectronic logic device provided in the embodiment of the application is shown.
[0029] Figure 3 A photo-thermal-electric response curve of the device provided in the embodiment of the application is shown.
[0030] Figure 4 A vector OR gate signal output schematic diagram provided in the embodiment of the application is shown.
[0031] Figure 5 A vector XOR gate signal output schematic diagram provided in the embodiment of the application is shown.
[0032] Figure 6 A vector XNOR gate signal output schematic diagram provided in the embodiment of the application is shown.
[0033] Figure 7 A flow chart of the preparation method of the vector optoelectronic logic device of the application is shown.
[0034] In the drawings:
[0035] 1, LNOI substrate;
[0036] 2, two-dimensional bismuth selenide material;
[0037] 3, source metal electrode;
[0038] 4, drain metal electrode;
[0039] 5, laser light source;
[0040] 6, digital source table. DETAILED DESCRIPTION
[0041] In order to make the skilled in the art more clear and explicit technical solutions of the application, the application will be further described in detail below in combination with the embodiments and drawings, but the implementation manner of the application is not limited to this.
[0042] Figure 1 The application discloses a kind of multi-field regulated vector optoelectronic logic device, including LNOI substrate 1, two-dimensional bismuth selenide material 2 is equipped on the upper surface of LNOI substrate 1, source metal electrode 3 and drain metal electrode 4 two metal electrodes are equipped in the upper surface of LNOI substrate 1 and contact with two-dimensional bismuth selenide material 2, digital source table 6 for providing input voltage and testing output current of electrode is connected on the two metal electrodes of source metal electrode 3 and drain metal electrode 4, two laser light sources 5 are respectively arranged above the two-dimensional bismuth selenide material and below the LNOI substrate.
[0043] Specifically, the LNOI substrate 1 includes a 6 μm thin film lithium niobate, a 2 μm silicon dioxide and a 500 μm bulk lithium niobate.
[0044] Specifically, the two-dimensional bismuth selenide material 2 is a two-dimensional nanosheet, and the thickness of the two-dimensional bismuth selenide material is 28.94 nm.
[0045] Specifically, the source metal electrode 3 and the drain metal electrode 4 are a combination of gold and chromium, and the thickness is 90 nm.
[0046] Specifically, the position of the laser light source 5 relative to the two-dimensional bismuth selenide material 2 and the LNOI substrate 1 can be adjusted, and the output power of the laser light source 5 can be adjusted.
[0047] Meanwhile, the application also provides a preparation method of the multi-field regulated vector optoelectronic logic device, as shown in Figure 7 The specific preparation steps are as follows:
[0048] Step one: using chemical vapor deposition method to realize the growth of two-dimensional bismuth selenide material 2 on fluorine mica substrate;
[0049] Specifically, a single-temperature zone tube furnace with rapid heating is used for chemical vapor deposition growth, and bismuth oxide powder raw material and selenium powder raw material are respectively placed in the middle and upstream regions of the tube furnace quartz tube, and fluorine mica sheet is placed in the downstream region of the tube furnace quartz tube, the center temperature of the tube furnace is set to be increased from room temperature to 680 DEG C for 22 min, and then kept at 680 DEG C for 10 min, and finally naturally cooled down, to realize the preparation of two-dimensional bismuth selenide material 2.
[0050] Step two: transfer the two-dimensional bismuth selenide material to the LNOI substrate 1;
[0051] Specifically, taking wet transfer as an example, PMMA solution is spin-coated onto fluorinated phlogopite prepared as two-dimensional bismuth selenide material 2, and then dried. Appropriately sized heat-release tape is cut and pasted onto the PMMA surface. Subsequently, the fluorinated phlogopite sheet is separated by immersion in water. Then, the heat-release tape is pasted onto the clean fluorinated phlogopite sheet and heated to remove the heat-release tape. Appropriately sized PDMS is cut and pasted onto the mica area with material. Finally, the material on the PDMS is transferred to LNOI substrate 1 under a microscope, and the PMMA on the surface is removed by immersion in acetone.
[0052] Step 3: Define the top electrode region on the two-dimensional bismuth selenide material 2 on the surface of LNOI substrate 1 by ultraviolet spot lithography;
[0053] Specifically, the top electrode region is defined by spin-coating ultraviolet photoresist (Rol7133 negative photoresist) onto the substrate and drying it, then exposing it with 365nm ultraviolet light, followed by drying, development and fixing operations.
[0054] Step 4: Deposit metal and perform a lift-off process on the top electrode area after photolithography to obtain the top electrode layer.
[0055] Specifically, in step four, a metal electrode is deposited by electron beam evaporation.
[0056] Meanwhile, the present invention also provides an application method for a multi-field controlled vector optoelectronic logic device. The multi-field controlled vector optoelectronic logic device can achieve current output of different magnitudes and vector directions by adjusting the relative position of the laser light source 5, the power of the laser light source 5, and the bias voltage provided by the digital source meter 6 to the source metal electrode 3 and the drain metal electrode 4.
[0057] Specifically, such as Figure 2 As shown, Figure 2 The left figure demonstrates the effect of adjusting the laser power of the laser source 5 on the device by adjusting the power attenuator on the device's output current. As shown by the curve in the left figure, as the laser power increases, the output photocurrent of the device also increases. Therefore, different current logic values can be output by controlling the laser power. Figure 2 The middle figure demonstrates the effect of controlling the output current of the device by adjusting the relative position of the laser source 5 with respect to the two-dimensional bismuth selenide material 2. As shown by the curve in the middle figure, as the laser irradiation position moves from the left to the right, the magnitude and direction of the output current of the device will change accordingly. Therefore, different magnitudes and vector directions of current logic output can be achieved by controlling the relative position of the laser source 5. Figure 2The right figure demonstrates the regulation effect of the device output current by applying a certain bias to the device through the digital source table 6. As shown in the curve of the right figure, with the change of the bias applied to the device by the digital source table, the size and direction of the output current of the device will also change accordingly, so the different size and direction of the logic current output can be realized by regulating the external bias.
[0058] The response band of the vector optoelectronic logic device is also tested in this example, and the result is shown in Figure 3 , wherein when the laser irradiates at one end of the vector optoelectronic logic device, the response photocurrent of the device is forward current, and when the laser irradiates at the other end of the vector optoelectronic logic device, the response photocurrent of the device is reverse current. The result shows that the working band of the vector optoelectronic logic device regulated by multiple fields is 365 nm-9.7 μm, which has an ultra-wide spectral response range.
[0059] In this example, the synchronous irradiation of the two or more laser light sources 5 is used as the logic input, and the position and power of the laser light sources 5 and the bias of the digital source table 6 are regulated to design different logic values. Through the identification of the output current by the digital source table 6, the logic function outputs of the logic or gate, the logic XOR gate and the logic XNOR gate are realized.
[0060] Specifically, as shown in Figure 4 , when the two lasers are located at the left end of the vector optoelectronic logic device at the same time, the light source on is logic "1" and the light source off is logic "0". When the two lasers are turned off at the same time, the output current of the device is approximately equal to 0, and the output logic is "0" at this time. When one of the two lasers is turned on, the output current of the device is forward current, and the output logic is "1" at this time. When the two lasers are turned on at the same time, the output current of the device is also forward current, and the output logic is "1" at this time. Therefore, the demonstration of the logic or gate is realized. Similarly, when the two lasers are located at the right end of the vector optoelectronic logic device at the same time, the demonstration of the logic or gate can also be realized. It should be noted that the output current represented by logic "1" at this time is reverse current, so the logic or gate of this example also has a vector output.
[0061] Specifically, as shown in Figure 5 , when the two lasers are located at the two ends of the device at the same time, the light source on is logic "1" and the light source off is logic "0". When the two lasers are turned off at the same time, the output current of the device is approximately equal to 0, and the output logic is "0" at this time. When one of the two lasers is turned on, the output current of the device is forward current or reverse current, and the output logic is "1" at this time. When the two lasers are turned on at the same time, the output current of the device is approximately equal to 0, and the output logic is "0" at this time. Therefore, the demonstration of the vector logic XOR gate is realized.
[0062] Specifically, as shown in Figure 6As shown, when the relative positions of the light sources are taken as logical inputs, the left side is irradiated by the light source as logical "0", the right side is irradiated by the laser as logical "1", when the two lasers irradiate the left side at the same time, the output current of the device is a positive current, at this time, the output logic "1" is output, when one of the two lasers irradiates the left side and the other irradiates the right side, the output current of the device is about equal to 0, at this time, the output logic "0" is output, when the two lasers irradiate the right side at the same time, the output current of the device is a positive current, at this time, the output logic "1" is output, thus the demonstration of the vector logic XNOR gate is realized.
[0063] Compared with the prior art, the significant advantages of the multi-field regulated vector optoelectronic logic device and the preparation method thereof are as follows: the two-dimensional bismuth selenide material is integrated on the LNOI substrate, the sensitive characteristics of the two-dimensional bismuth selenide material photo-thermo-electric response to the laser position, power and external bias are utilized, and a multi-field regulated vector optoelectronic logic device is prepared; the vector optoelectronic logic device can realize different logic input values by regulating the laser light source position, the laser power size and the external bias, so that the different size and vector direction of the photocurrent output value are realized; the multi-beam logic value operation is realized by the simultaneous irradiation of the two or more laser light sources, and the or gate, the XOR gate and the XNOR gate can be realized; the two-dimensional bismuth selenide material photo-thermo-electric response used in the application can work in the super-wide waveband of 365nm-9.7um, and has great application value in the communication field, the optical computing chip field and the high-speed information processing field.
[0064] The above is only further embodiments of the present application, but the protection scope of the present application is not limited thereto, any skilled person in the art can make equivalent replacement or change according to the technical scheme and concept of the present application within the disclosed range, which belongs to the protection scope of the present application.
Claims
1. A multi-field regulated vector optoelectronic logic device, characterized by: The LNOI substrate (1) comprises a 6μm thin film lithium niobate on the top layer, a 2μm silicon dioxide on the middle layer and a 500μm bulk lithium niobate on the bottom layer. The top of the LNOI substrate (1) is paved with a two-dimensional bismuth selenide material (2). The two-dimensional bismuth selenide material (2) is provided with a source metal electrode (3) on one side of the top and a drain metal electrode (4) on the other side. A digital source table (6) is connected on the source metal electrode (3) and the drain metal electrode (4). Two laser light sources (5) are projected on the bottom of the LNOI substrate (1) and the top of the two-dimensional bismuth selenide material (2) respectively.
2. A multi-field regulated vector optoelectronic logic device according to claim 1, wherein: The LNOI substrate (1) comprises a 6μm thin film lithium niobate on the top layer, a 2μm silicon dioxide on the middle layer and a 500μm bulk lithium niobate on the bottom layer.
3. A multi-field regulated vector optoelectronic logic device according to claim 1, wherein: The two-dimensional bismuth selenide material (2) is a two-dimensional nanosheet. The thickness of the two-dimensional bismuth selenide material (2) is 1-100nm.
4. A multi-field regulated vector optoelectronic logic device according to claim 1, wherein: The source metal electrode (3) and the drain metal electrode (4) are made of gold, chromium, silver or a combination of 50% chromium and 50% gold.
5. A method for preparing a multi-field regulated vectorial optoelectronic logic device based on the multi-field regulated vectorial optoelectronic logic device according to any one of claims 1-4, characterized in that: The method comprises the following steps: Step one: use chemical vapor deposition to grow the two-dimensional bismuth selenide material (2) on a fluorotitanium mica substrate; Step two: transfer the two-dimensional bismuth selenide material (2) to the LNOI substrate (1); Step three: define the top electrode area on the two-dimensional bismuth selenide material (2) on the surface of the LNOI substrate (1) by ultraviolet point lithography; Step four: deposit metal and peel off the top electrode area after lithography to obtain the top electrode layer.
6. The method of claim 5, wherein the method further comprises: In step two, the transfer method adopts wet transfer and dry transfer.
7. A multi-field regulated vector optoelectronic logic device and method of fabrication as claimed in claim 5, wherein: In step three, spin-coat ultraviolet photoresist on the substrate and dry it, then use 365nm ultraviolet light for exposure treatment, and then perform drying, developing and fixing operations in sequence to define the top electrode area.
8. A multi-field regulated vector optoelectronic logic device and method of fabrication as claimed in claim 5, wherein: In step four, the metal electrode is deposited by electron beam evaporation.