A group III nitride semiconductor light-emitting element

Abstract

The present invention relates to the field of semiconductor technology, and specifically discloses a Group III nitride semiconductor light-emitting element. The Group III nitride semiconductor light-emitting element comprises, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor. The active layer is an electron overflow suppression quantum well, the electron overflow suppression quantum well being a periodic structure composed of a well layer and a barrier layer, and the electron overflow suppression quantum well comprises a first electron overflow suppression quantum well and a second electron overflow suppression quantum well. The Group III nitride semiconductor light-emitting element enhances the quantum confinement effect of electron and hole wave functions in the quantum well by regulating the balance between hole mobility and electron mobility in the electron overflow suppression quantum well, improves the radiative recombination efficiency and rate of electrons and holes in the quantum well, reduces the excess electron overflow effect, improves the luminous efficiency of the light-emitting element under high current injection, and reduces efficiency degradation under high current injection and thermal degradation under high temperature conditions.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a Group III nitride semiconductor light-emitting element. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps and become the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution displays, outdoor displays, Mini-LED, Micro-LED, mobile TV backlights, backlighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effects, reducing the luminous efficiency of semiconductor light-emitting devices;

[0004] At the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum wells. The efficiency of hole injection into the multi-quantum wells is low, resulting in low luminescence efficiency of the multi-quantum wells. The nitride semiconductor structure has non-central symmetry, and a strong spontaneous polarization will be generated along the c-axis direction. The piezoelectric polarization effect of the lattice mismatch is superimposed to form an intrinsic polarization field. This intrinsic polarization field produces a strong quantum-confined Stark effect in the multi-quantum well layer along the (001) direction, causing the band tilt and the spatial separation of the electron-hole wave function, reducing the radiative recombination efficiency of the electron-hole.

[0005] The refractive index, dielectric constant and other parameters of semiconductor light-emitting elements are greater than those of air, resulting in a smaller total reflection angle of light emitted from the quantum well. Due to increased reflection, part of the light is reflected back into the semiconductor, which may cause multiple reflections and absorption, thereby reducing the luminous efficiency and leading to a higher reflectivity. High-refractive-index semiconductor materials easily form optical waveguide structures. Light propagates in the waveguide and is limited by reflection. The existence of the waveguide mode will prevent some light from being directly emitted from the light-emitting area, thereby affecting the luminous efficiency and reducing the efficiency of light emitted from the semiconductor material. Summary of the Invention

[0006] The purpose of the present invention is to provide a Group III nitride semiconductor light emitting element with a simple structure and reasonable design in order to solve the above problems.

[0007] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0008] A Group III nitride semiconductor light-emitting element comprises, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor. The active layer is an electron overflow suppression quantum well. The electron overflow suppression quantum well is a periodic structure consisting of a well layer and a barrier layer. The electron overflow suppression quantum well comprises a first electron overflow suppression quantum well and a second electron overflow suppression quantum well.

[0009] Furthermore, the rising angle of the valley position of the hole mobility of the first electron overflow suppression quantum well toward the n-type semiconductor is β, the rising angle of the valley position of the valence band effective state density of the first electron overflow suppression quantum well toward the n-type semiconductor is γ, the rising angle of the valley position of the light hole effective mass of the first electron overflow suppression quantum well toward the n-type semiconductor is θ, and the rising angle of the peak position of the heavy hole effective mass of the first electron overflow suppression quantum well toward the n-type semiconductor is ψ, wherein: ψ≤θ≤γ≤β.

[0010] Furthermore, the rising angle of the valley position of the hole mobility of the second electron overflow suppression quantum well toward the n-type semiconductor is δ, the rising angle of the valley position of the valence band effective state density of the second electron overflow suppression quantum well toward the n-type semiconductor is ε, the rising angle of the valley position of the light hole effective mass of the second electron overflow suppression quantum well toward the n-type semiconductor is η, and the rising angle of the valley position of the heavy hole effective mass of the second electron overflow suppression quantum well toward the n-type semiconductor is μ, wherein: μ≤η≤ε≤δ.

[0011] Furthermore, the rising angles of the valley positions of the hole mobility, valence band effective state density, light hole effective mass, and heavy hole effective mass of the first electron overflow suppression quantum well and the second electron overflow suppression quantum well toward the n-type semiconductor have the following relationship: ψ≤μ≤θ≤η≤γ≤ε≤β≤δ.

[0012] Furthermore, the hole mobility of the well layer of the first electron overflow suppression quantum well is A, the hole mobility of the barrier layer of the first electron overflow suppression quantum well is B, the hole mobility of the well layer of the second electron overflow suppression quantum well is C, the hole mobility of the barrier layer of the second electron overflow suppression quantum well is D, and the hole mobility of the p-type semiconductor is E, wherein 5≤E≤B≤C≤A≤2000, the unit is cm 2 / (V · s);

[0013] The valence band effective state density of the well layer of the first electron overflow suppression quantum well is F, the valence band effective state density of the barrier layer of the first electron overflow suppression quantum well is G, the valence band effective state density of the well layer of the second electron overflow suppression quantum well is H, the valence band effective state density of the barrier layer of the second electron overflow suppression quantum well is I, and the valence band effective state density of the p-type semiconductor is J, wherein 5*10 18 ≤H≤F≤G≤I≤J≤5*10 21 , in cm -3 .

[0014] Furthermore, the light hole effective mass of the well layer of the first electron overflow suppression quantum well is K, the light hole effective mass of the barrier layer of the first electron overflow suppression quantum well is L, the light hole effective mass of the well layer of the second electron overflow suppression quantum well is M, the light hole effective mass of the barrier layer of the second electron overflow suppression quantum well is N, and the light hole effective mass of the p-type semiconductor is O, wherein 0.2≤M≤K≤L≤N≤O≤20, the unit is m 0；

[0015] The effective mass of heavy holes in the well layer of the first electron overflow suppression quantum well is P, the effective mass of heavy holes in the barrier layer of the first electron overflow suppression quantum well is Q, the effective mass of heavy holes in the well layer of the second electron overflow suppression quantum well is R, the effective mass of heavy holes in the barrier layer of the second electron overflow suppression quantum well is S, and the effective mass of heavy holes in the p-type semiconductor is T, wherein 0.2≤R≤P≤Q≤S≤T≤20, and the unit is m0.

[0016] Furthermore, the hole mobility distribution of the first electron overflow suppression quantum well has a curve distribution of function y=A1sin(B1x+C1), and the hole mobility distribution of the second electron overflow suppression quantum well has a curve distribution of function y=A2sin(B2x+C2), wherein A1≤A2;

[0017] The valence band effective state density distribution of the first electron overflow suppression quantum well has a curve distribution of function y=D1cos(E1x+F1), and the valence band effective state density distribution of the second electron overflow suppression quantum well has a curve distribution of function y=D2cos(E2x+F2), wherein D1≤D2;

[0018] The light hole effective mass distribution of the first electron overflow suppression quantum well has a curve distribution of function y=G1cos(H1x+J1), and the light hole effective mass distribution of the second electron overflow suppression quantum well has a curve distribution of function y=G2cos(H2x+J2), wherein G1≤G2;

[0019] The effective mass distribution of heavy holes of the first electron overflow suppression quantum well has a curve distribution of function y=K1cos(M1x+N1), and the effective mass distribution of heavy holes of the second electron overflow suppression quantum well has a curve distribution of function y=K2cos(M2x+N2), wherein K1≤K2.

[0020] Furthermore, the hole mobility distribution, valence band effective state density distribution, light hole effective mass distribution and heavy hole effective mass distribution of the first electron overflow suppression quantum well and the second electron overflow suppression quantum well have the following relationship: G1≤G2≤K1≤K2≤D1≤D2≤A1≤A2.

[0021] Furthermore, the well layer for suppressing electron overflow quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms;

[0022] The barrier layer for suppressing electron overflow quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms.

[0023] Furthermore, the n-type semiconductor and the p-type semiconductor are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms;

[0024] The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

[0025] The beneficial effects of the present invention are as follows: the present invention transforms the active layer into a quantum well that suppresses electron overflow, and by regulating the balance between the hole mobility and the electron mobility of the quantum well that suppresses electron overflow, the quantum confinement effect of the electron and hole wave functions in the quantum well is enhanced, the radiation recombination efficiency and rate of electrons and holes in the quantum well are improved, the excess electron overflow effect is reduced, the luminous efficiency of the light-emitting element under large current injection is improved, and the efficiency attenuation under large current injection and the thermal attenuation under high temperature conditions are reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 1 is a schematic structural diagram of a Group III nitride semiconductor light-emitting element according to an embodiment of the present invention;

[0027] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a Group III nitride semiconductor light-emitting device according to an embodiment of the present invention;

[0028] Figure 3 This is a SIMS secondary ion mass spectrum of the structure of a Group III nitride semiconductor light-emitting device according to an embodiment of the present invention (partially enlarged view);

[0029] Figure 4 This is a transmission electron microscope (TEM) image (quantum well) of a Group III nitride semiconductor light-emitting element according to an embodiment of the present invention;

[0030] Figure 5This is a transmission electron microscope (TEM) image of a Group III nitride semiconductor light-emitting element according to an embodiment of the present invention (overall structure).

[0031] In the figure: 100, substrate; 101, n-type semiconductor; 102, electron overflow suppression quantum well; 102a, first electron overflow suppression quantum well; 102b, second electron overflow suppression quantum well; 103, p-type semiconductor. DETAILED DESCRIPTION

[0032] The present application is described in further detail below in conjunction with the accompanying drawings. It is necessary to point out that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technicians in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0033] like Figure 1-Figure 5 As shown, a III-nitride semiconductor light-emitting element includes, from bottom to top, a substrate 100, an n-type semiconductor 101, an active layer and a p-type semiconductor 103. The active layer is an electron overflow suppression quantum well 102. The electron overflow suppression quantum well 102 is a periodic structure composed of a well layer and a barrier layer. The electron overflow suppression quantum well 102 includes a first electron overflow suppression quantum well 102a and a second electron overflow suppression quantum well 102b.

[0034] Among them, the quantum well 102 that suppresses electron overflow refers to the use of a specific structure in the semiconductor device to limit the excessive flow of electrons, thereby avoiding excessive injection of electrons into specific areas, so as to more effectively control the recombination process of electrons and holes, thereby improving the performance and efficiency of the device and helping to optimize the performance of semiconductor lasers, LEDs and other devices.

[0035] In a specific embodiment, the rising angle of the valley position of the hole mobility of the first electron overflow suppression quantum well 102a toward the n-type semiconductor 101 is β, the rising angle of the valley position of the valence band effective state density of the first electron overflow suppression quantum well 102a toward the n-type semiconductor 101 is γ, the rising angle of the valley position of the light hole effective mass of the first electron overflow suppression quantum well 102a toward the n-type semiconductor 101 is θ, and the rising angle of the peak position of the heavy hole effective mass of the first electron overflow suppression quantum well 102a toward the n-type semiconductor 101 is ψ, wherein: ψ≤θ≤γ≤β.

[0036] In a specific embodiment, the rising angle of the valley position of the hole mobility of the second electron overflow suppression quantum well 102b toward the n-type semiconductor 101 is δ, the rising angle of the valley position of the valence band effective state density of the second electron overflow suppression quantum well 102b toward the n-type semiconductor 101 is ε, the rising angle of the valley position of the light hole effective mass of the second electron overflow suppression quantum well 102b toward the n-type semiconductor 101 is η, and the rising angle of the valley position of the heavy hole effective mass of the second electron overflow suppression quantum well 102b toward the n-type semiconductor 101 is μ, wherein: μ≤η≤ε≤δ.

[0037] The rising angle of the valley position of the hole mobility toward the n-type semiconductor 101 refers to the rising angle of the lowest point of the hole mobility in the quantum well structure relative to the n-type semiconductor 101. Low mobility means that holes move slowly, which helps electrons and holes recombine more efficiently in the quantum well, thereby improving luminescence efficiency.

[0038] The rising angle of the valley position of the valence band effective state density toward the n-type semiconductor 101 refers to the rising angle of the position of the lowest point of the effective state density in the valence band relative to the n-type semiconductor 101. The effective state density is related to the energy level distribution in the semiconductor material and affects the recombination probability of electrons and holes.

[0039] The rising angle of the valley position of the light hole effective mass toward the n-type semiconductor 101 refers to the rising angle of the lowest point of the light hole effective mass (holes with smaller mass) relative to the n-type semiconductor 101. The smaller the effective mass, the more flexible the hole movement, which facilitates carrier transport.

[0040] The angle of rise of the peak position of the heavy hole effective mass toward the n-type semiconductor 101 refers to the angle of rise of the highest point of the heavy hole effective mass (larger holes) relative to the n-type semiconductor 101. Heavy holes move relatively slowly and often act as a confinement in quantum wells, helping to reduce electron overflow.

[0041] In a specific embodiment, the rising angles of the valley positions of the hole mobility, valence band effective state density, light hole effective mass, and heavy hole effective mass of the first electron overflow suppression quantum well 102a and the second electron overflow suppression quantum well 102b toward the n-type semiconductor 101 have the following relationship: ψ≤μ≤θ≤η≤γ≤ε≤β≤δ.

[0042] In a specific embodiment, the hole mobility of the well layer of the first electron overflow suppression quantum well 102a is A, the hole mobility of the barrier layer of the first electron overflow suppression quantum well 102a is B, the hole mobility of the well layer of the second electron overflow suppression quantum well 102b is C, the hole mobility of the barrier layer of the second electron overflow suppression quantum well 102b is D, and the hole mobility of the p-type semiconductor 103 is E, wherein 5≤E≤B≤C≤A≤2000, the unit is cm 2 / (V・s);

[0043] The valence band effective state density of the well layer of the first electron overflow suppression quantum well 102a is F, the valence band effective state density of the barrier layer of the first electron overflow suppression quantum well 102a is G, the valence band effective state density of the well layer of the second electron overflow suppression quantum well 102b is H, the valence band effective state density of the barrier layer of the second electron overflow suppression quantum well 102b is I, and the valence band effective state density of the p-type semiconductor 103 is J, wherein 5*10 18 ≤H≤F≤G≤I≤J≤5*10 21 , in cm -3 .

[0044] In a specific embodiment, the light hole effective mass of the well layer of the first electron overflow suppression quantum well 102a is K, the light hole effective mass of the barrier layer of the first electron overflow suppression quantum well 102a is L, the light hole effective mass of the well layer of the second electron overflow suppression quantum well 102b is M, the light hole effective mass of the barrier layer of the second electron overflow suppression quantum well 102b is N, and the light hole effective mass of the p-type semiconductor 103 is O, wherein 0.2≤M≤K≤L≤N≤O≤20, the unit is m 0；

[0045] The effective mass of heavy holes in the well layer of the first electron overflow suppression quantum well 102a is P, the effective mass of heavy holes in the barrier layer of the first electron overflow suppression quantum well 102a is Q, the effective mass of heavy holes in the well layer of the second electron overflow suppression quantum well 102b is R, the effective mass of heavy holes in the barrier layer of the second electron overflow suppression quantum well 102b is S, and the effective mass of heavy holes in the p-type semiconductor 103 is T, wherein 0.2≤R≤P≤Q≤S≤T≤20, and the unit is m0.

[0046] In a specific embodiment, the hole mobility distribution of the first electron overflow suppression quantum well 102a has a curve distribution of function y=A1sin(B1x+C1), and the hole mobility distribution of the second electron overflow suppression quantum well 102b has a curve distribution of function y=A2sin(B2x+C2), wherein A1≤A2;

[0047] The valence band effective state density distribution of the first electron overflow suppression quantum well 102a has a curve distribution of function y=D1cos(E1x+F1), and the valence band effective state density distribution of the second electron overflow suppression quantum well 102b has a curve distribution of function y=D2cos(E2x+F2), wherein D1≤D2;

[0048] The light hole effective mass distribution of the first electron overflow suppression quantum well 102a has a curve distribution of function y=G1cos(H1x+J1), and the light hole effective mass distribution of the second electron overflow suppression quantum well 102b has a curve distribution of function y=G2cos(H2x+J2), wherein G1≤G2;

[0049] The effective mass distribution of heavy holes of the first electron overflow suppression quantum well 102a has a curve distribution of function y=K1cos(M1x+N1), and the effective mass distribution of heavy holes of the second electron overflow suppression quantum well 102b has a curve distribution of function y=K2cos(M2x+N2), where K1≤K2.

[0050] In a specific embodiment, the hole mobility distribution, valence band effective state density distribution, light hole effective mass distribution and heavy hole effective mass distribution of the first electron overflow suppression quantum well 102a and the second electron overflow suppression quantum well 102b have the following relationship: G1≤G2≤K1≤K2≤D1≤D2≤A1≤A2.

[0051] In a specific embodiment, the well layer of the electron overflow suppression quantum well 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms;

[0052] The barrier layer for suppressing electron overflow quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms.

[0053] In a specific embodiment, the n-type semiconductor 101 and the p-type semiconductor 103 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the n-type semiconductor 101 is 5 to 60,000 angstroms; the thickness of the p-type semiconductor 103 is 10 to 9,000 angstroms;

[0054] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

[0055] The above-described embodiments merely illustrate several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, and all such variations and improvements fall within the scope of protection of the present invention.

Claims

1. A group III nitride semiconductor light emitting element comprising, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor, characterized in that: The active layer is an electron overflow suppression quantum well, and the electron overflow suppression quantum well is a periodic structure composed of a well layer and a barrier layer. The electron overflow suppression quantum well includes a first electron overflow suppression quantum well and a second electron overflow suppression quantum well; the rising angle of the valley position of the hole mobility of the first electron overflow suppression quantum well toward the n-type semiconductor is β, the rising angle of the valley position of the valence band effective state density of the first electron overflow suppression quantum well toward the n-type semiconductor is γ, the rising angle of the valley position of the light hole effective mass of the first electron overflow suppression quantum well toward the n-type semiconductor is θ, and the heavy hole effective mass of the first electron overflow suppression quantum well is θ. The rising angle of the peak position of the second electron overflow suppression quantum well toward the n-type semiconductor is ψ, wherein: ψ≤θ≤γ≤β; the rising angle of the valley position of the hole mobility of the second electron overflow suppression quantum well toward the n-type semiconductor is δ, the rising angle of the valley position of the valence band effective state density of the second electron overflow suppression quantum well toward the n-type semiconductor is ε, the rising angle of the valley position of the light hole effective mass of the second electron overflow suppression quantum well toward the n-type semiconductor is η, and the rising angle of the valley position of the heavy hole effective mass of the second electron overflow suppression quantum well toward the n-type semiconductor is μ, wherein: μ≤η≤ε≤δ, and the angles are the tangent inclination angles of the curve.

2. The III-nitride semiconductor light-emitting device according to claim 1, wherein: The rising angles of the valley positions of the hole mobility, valence band effective state density, light hole effective mass, and heavy hole effective mass of the first electron overflow suppression quantum well and the second electron overflow suppression quantum well toward the n-type semiconductor have the following relationship: ψ≤μ≤θ≤η≤γ≤ε≤β≤δ.

3. The III-nitride semiconductor light-emitting device according to claim 2, wherein: The hole mobility of the well layer of the first electron overflow suppression quantum well is A, the hole mobility of the barrier layer of the first electron overflow suppression quantum well is B, the hole mobility of the well layer of the second electron overflow suppression quantum well is C, and the hole mobility of the p-type semiconductor is E, wherein 5≤E≤B≤C≤A≤2000, the unit is cm 2 / (V·s); The valence band effective state density of the well layer of the first electron overflow suppression quantum well is F, the valence band effective state density of the barrier layer of the first electron overflow suppression quantum well is G, the valence band effective state density of the well layer of the second electron overflow suppression quantum well is H, the valence band effective state density of the barrier layer of the second electron overflow suppression quantum well is I, and the valence band effective state density of the p-type semiconductor is J, wherein 5*10 18 ≤H≤F≤G≤I≤J≤5*10 21 , in cm -3 .

4. The III-nitride semiconductor light-emitting device according to claim 3, wherein: The light hole effective mass of the well layer of the first electron overflow suppression quantum well is K, the light hole effective mass of the barrier layer of the first electron overflow suppression quantum well is L, the light hole effective mass of the well layer of the second electron overflow suppression quantum well is M, the light hole effective mass of the barrier layer of the second electron overflow suppression quantum well is N, and the light hole effective mass of the p-type semiconductor is O, wherein 0.2≤M≤K≤L≤N≤O≤20, the unit is m0; The effective mass of heavy holes in the well layer of the first electron overflow suppression quantum well is P, the effective mass of heavy holes in the barrier layer of the first electron overflow suppression quantum well is Q, the effective mass of heavy holes in the well layer of the second electron overflow suppression quantum well is R, the effective mass of heavy holes in the barrier layer of the second electron overflow suppression quantum well is S, and the effective mass of heavy holes in the p-type semiconductor is T, wherein 0.2≤R≤P≤Q≤S≤T≤20, and the unit is m0.

5. The III-nitride semiconductor light-emitting device according to claim 4, characterized in that: The well layer of the electron overflow suppression quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms.

6. A Group III nitride semiconductor light-emitting element according to claim 5, wherein the barrier layer for suppressing electron overflow quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms.

7. The III-nitride semiconductor light-emitting device according to claim 6, characterized in that: The n-type semiconductor and the p-type semiconductor are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

8. A III-nitride semiconductor light-emitting element according to any one of claims 1 to 7, wherein the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

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