Driver Circuit, Driving Method, and Power Device of a Power Device

Abstract

The present application relates to a driving circuit, a driving method and a power device for a power device. The driving circuit includes: a turn-on module, a gate module and a cathode module; wherein, the first end of the cathode module is connected to the cathode of the power semiconductor in the power device, and the second end of the cathode module is respectively connected to the second ends of the turn-on module and the gate module; the first end of the turn-on module is connected to the gate of the power semiconductor, and the first end of the gate module is connected to the gate of the power semiconductor. The turn-on or turn-off of the power device is realized by the conduction or disconnection of each module, without the need for recharging after each turn-off, reducing the problem of excessive power of the power device caused by the traditional driving circuit and driving method. At the same time, the switching frequency of the power device is increased, and a cathode module is added to the cathode of the power device, so that the power device has a positive temperature characteristic, improving the turn-off gain of the power device, thereby improving the working performance of the power device.

Description

Technical Field

[0001] The present application relates to the technical field of power semiconductors, and particularly to a driving circuit, a driving method and a power device for a power device. Background Art

[0002] Power semiconductor devices have been widely used in fields such as industrial variable frequency speed regulation, wind power grid connection, rail transit, and DC power transmission. The whole-wafer type of power device is a common power device. During the use of the whole-wafer type of power device, a driving circuit is required to control the turn-on and turn-off of the whole-wafer type of power device.

[0003] However, the traditional driving circuit of the power device will cause the performance of the power device to decline. Summary of the Invention

[0004] Based on this, in view of the above technical problems, it is necessary to provide a driving circuit for a power device that can improve the performance of the power device.

[0005] In a first aspect, the present application provides a driving circuit for a power device, the driving circuit including: a turn-on module, a gate module, and a cathode module;

[0006] Wherein, the first end of the cathode module is connected to the cathode of the power semiconductor in the power device, and the second end of the cathode module is respectively connected to the second ends of the turn-on module and the gate module; the first end of the turn-on module is connected to the gate of the power semiconductor, and the first end of the gate module is connected to the gate of the power semiconductor.

[0007] In one embodiment, the gate module includes a first switch; the cathode module includes a second switch; the turn-on module includes a third switch and a charge-discharge component;

[0008] Wherein, the first end of the second switch is connected to the cathode of the power semiconductor, and the second end of the second switch is respectively connected to the first switch and the second end of the third switch; the first end of the third switch is connected to the second end of the charge-discharge component, the first end of the charge-discharge component is connected to the gate of the power semiconductor, and the first end of the second switch is connected to the gate of the power semiconductor.

[0009] In one embodiment, the gate module includes a first switch; the cathode module includes a second switch; the turn-on module includes a third switch and a charge-discharge component;

[0010] Wherein, the first end of the second switch is connected to the cathode of the power semiconductor, and the second end of the second switch is respectively connected to the first switch and the second end of the charge and discharge component; the first end of the charge and discharge component is connected to the second end of the third switch, the first end of the third switch is connected to the gate of the power semiconductor, and the first end of the second switch is connected to the gate of the power semiconductor.

[0011] In one embodiment, the gate module includes a first switch; the cathode module includes a second switch; the turn-on module includes a third switch, a turn-on inductor, and a turn-on capacitor;

[0012] Wherein, the first end of the second switch is connected to the cathode of the power semiconductor, the second end of the second switch is respectively connected to the first switch and the second end of the turn-on inductor, the first end of the turn-on inductor is connected to the second end of the third switch, the first end of the third switch is connected to the second end of the turn-on capacitor, the first end of the turn-on capacitor is connected to the gate of the power semiconductor, and the first end of the second switch is connected to the gate of the power semiconductor.

[0013] In one embodiment, the drive circuit further includes a maintenance module, the first end of the maintenance module is connected to the cathode of the power semiconductor in the power device, and the second end of the maintenance module is respectively connected to the second ends of the turn-on module, the cathode module, and the gate module.

[0014] In one embodiment, the drive circuit further includes: a power management module, one end of the power management module is connected to an external power supply, and the other end of the power management module is respectively connected to the turn-on module, the gate module, and the cathode module.

[0015] In a second aspect, the present application further provides a method for driving a power device, the method is used for a drive system, the drive system includes a controller and the drive circuit as described in the first aspect, and the method includes:

[0016] According to a first control strategy, controlling the turn-on module, the gate module, and the cathode module to be in a conducting state or a disconnected state to turn on the power device;

[0017] According to a second control strategy, controlling the gate module and the cathode module to be in a conducting state or a disconnected state to turn off the power device.

[0018] In one embodiment, the step of, according to the first control strategy, controlling the turn-on module, the gate module, and the cathode module to be in a conducting state or a disconnected state to turn on the power device includes:

[0019] At a first moment when the power device operates, control the cathode module to be in a conducting state;

[0020] At a second moment when the power device operates, control the turn-on module to be in a conducting state and control the gate module to be in a non-conducting state; the first moment is earlier than the second moment;

[0021] At a third moment when the power device operates, control the turn-on module to be in a non-conducting state; the second moment is earlier than the third moment.

[0022] In one embodiment, the controlling the gate module and the cathode module to be in a conducting state or a non-conducting state according to the second control strategy to turn off the power device includes:

[0023] At a fourth moment when the power device operates, control the gate to be in a conducting state;

[0024] At a fifth moment when the power device operates, control the cathode module to be in a non-conducting state; the fourth moment is earlier than the fifth moment.

[0025] In a third aspect, the present application also provides a power device, and the power device includes a driving circuit as described in the first aspect above

[0026] The driving circuit, driving method and power device of the above power device, the driving circuit includes: a turn-on module, a gate module and a cathode module; wherein, the first end of the cathode module is connected to the cathode of the power semiconductor in the power device, and the second end of the cathode module is respectively connected to the second ends of the turn-on module and the gate module; the first end of the turn-on module is connected to the gate of the power semiconductor, and the first end of the gate module is connected to the gate of the power semiconductor. By adding a cathode module to the cathode of the power device, the turn-on or turn-off of the power device is realized by the conduction or non-conduction of the turn-on module, the gate module and the cathode module, without the need for recharging after each turn-off, reducing the problem of excessive power of the power device caused by the traditional driving circuit and driving method. At the same time, the switching frequency of the power device is increased, and by adding a cathode module to the cathode of the power device, the power device has a positive temperature characteristic, improving the turn-off gain of the power device, thereby improving the working performance of the power device. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments of the present application or related technologies. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0028] Figure 1 is a structural block diagram of a driving circuit for a power device in the prior art;

[0029] Figure 2 is a structural block diagram of a driving circuit for a power device in one embodiment;

[0030] Figure 3 is a structural block diagram of a driving circuit for a power device in another embodiment;

[0031] Figure 4 is a structural block diagram of a driving circuit for a power device in another embodiment;

[0032] Figure 5 is a structural block diagram of a driving circuit for a power device in another embodiment;

[0033] Figure 6 is a structural block diagram of a driving circuit for a power device in another embodiment;

[0034] Figure 7 is a schematic flow diagram of a driving method for a power device in one embodiment;

[0035] Figure 8 is a schematic flow diagram of a driving method for a power device in another embodiment;

[0036] Figure 9 is a schematic flow diagram of a driving method for a power device in another embodiment;

[0037] Description of reference numerals:

[0038] 01: Power semiconductor; 02: External power supply; 10: Gate module;

[0039] 20: Cathode module; 30: Turn-on module; 40: Maintenance module;

[0040] 50: Power management module; 101: First switch; 201: Second switch;

[0041] 301: Third switch; 302: Charge and discharge component; 303: Turn-on inductor;

[0042] 304: Turn-on capacitor. Detailed implementation manners

[0043] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0044] Unless otherwise defined, technical terms or scientific terms involved in this application shall have the ordinary meanings understood by those with ordinary skills in the technical field to which this application pertains. The words such as "a", "an", "one kind", "the" and the like involved in this application do not indicate a limitation in quantity and may represent a singular or plural number. The terms "comprising", "including", "having" and any variations thereof involved in this application are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or modules (units) is not limited to the listed steps or units, but may further include steps or units not listed, or may further include other steps or units inherent to these processes, methods, products or devices. The "plurality" involved in this application means greater than or equal to two. "And / or" describes the association relationship of associated objects and indicates that three relationships may exist. For example, "A and / or B" may represent three situations: A exists alone, A and B exist simultaneously, and B exists alone. The terms "first", "second" and the like involved in this application are only used to distinguish similar objects and do not represent a specific order for the objects.

[0045] It can be understood that the terms "first", "second" and the like used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.

[0046] It can be understood that for "connection" in the following embodiments, if there is transmission of electrical signals or data between the connected circuits, units, units, etc., it should be understood as "electrical connection", "communication connection", etc.

[0047] It can be understood that "at least one" means one or more, and "a plurality" means two or more. "At least part of an element" means part or all of the element.

[0048] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms "comprise / include" or "have" and the like specify the existence of the stated features, wholes, steps, operations, components, parts or combinations thereof, but do not preclude the possibility of the existence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the related listed items.

[0049] Power devices are widely used in the fields of industrial variable frequency speed regulation, wind power grid connection, rail transit, DC power transmission, etc. Existing power devices applied to the whole-wafer type and their drive coordination are as Figure 1As shown, its circuit modules mainly include a power management circuit module, a turn-on module, a turn-off module, etc. For example, the power devices applied to the whole-wafer type can be gate turn-off thyristors (GTOs) and integrated gate-commutated thyristors (GCTs). As Figure 1 As shown, to achieve the turn-off of the whole-wafer type power devices, a turn-off module is usually configured between the gate and the cathode. When the power device is turned off, the gate-cathode voltage is reverse-biased, and the turn-off of the power device is achieved through the cooperation of the switching components and the capacitor bank. To achieve the turn-off performance of the power semiconductor devices with a larger current rating, a large number of switching components and capacitor banks usually need to be connected in parallel. However, the existing whole-wafer thyristor type devices generally have a negative temperature characteristic, that is, the on-state voltage drop of the power device does not increase with the increase of temperature, which is not conducive to the parallel use of multiple power devices. Moreover, the structure of the thyristor determines that the turn-off gain of the power device itself is fixed and cannot be regulated through the cooperation of the drive circuit and the power device. During turn-off, the capacitor between the gate and the cathode of this type of device needs to be repeatedly charged, and the excessive driving power causes the working frequency to decrease.

[0050] In summary, the current driving methods of power devices have great disadvantages in terms of current sharing characteristics, turn-off gain, and driving frequency, and cannot meet the application requirements of some usage scenarios. Therefore, for the thyristor type power devices, an improved new device driving structure and driving method need to be proposed.

[0051] The technical solutions of the present application and how the technical solutions of the present application solve the above technical problems will be described in detail below with specific embodiments. These specific embodiments below can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below with reference to the accompanying drawings.

[0052] In one embodiment, as Figure 2 As shown, a driving circuit for a power device is provided. The driving circuit includes: a turn-on module 30, a gate module 10, and a cathode module 20; wherein, the first end of the cathode module 20 is connected to the cathode of the power semiconductor 01 in the power device, and the second end of the cathode module 20 is respectively connected to the second ends of the turn-on module 30 and the gate module 10; the first end of the turn-on module 30 is connected to the gate of the power semiconductor 01, and the first end of the gate module 10 is connected to the gate of the power semiconductor 01.

[0053] In an embodiment of the present application, a turn-on module 30 and a gate module 10 are provided between the gate and the cathode of a power device. The turn-on module 30 is connected in parallel with the gate module 10, and a cathode module 20 is provided at the cathode of the power device, that is, the first end of the cathode module 20 is connected to the cathode of the power semiconductor 01 in the power device, and the second end of the cathode module 20 is respectively connected to the second ends of the turn-on module 30 and the gate module 10; the first end of the turn-on module 30 is connected to the gate of the power semiconductor 01, and the first end of the gate module 10 is connected to the gate of the power semiconductor 01.

[0054] In an embodiment of the present application, the turn-on of the power device can be achieved by controlling the conduction or disconnection of the turn-on module 30, the gate module 10, and the cathode module 20, and the disconnection of the power device can be achieved by controlling the conduction or disconnection of the turn-on module 30, the gate module 10, and the cathode module 20.

[0055] Optionally, the cathode module 20 may include a MOS switch component group. Exemplarily, the MOS switch component group may be a field-effect transistor MOS, a DirectFET, an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), a junction field-effect transistor (Junction Field-Effect Transistor, JFET), a high electron mobility transistor (High electron mobility transistor, HEMT), etc. By turning off the parallel connection of the MOS switch component group, the power device has a positive temperature characteristic during the current-carrying process, thereby obtaining a higher turn-off gain and lower drive power.

[0056] In the drive circuit of the above power device, the drive circuit includes: a turn-on module, a gate module, and a cathode module; wherein, the first end of the cathode module is connected to the cathode of the power semiconductor in the power device, and the second end of the cathode module is respectively connected to the second ends of the turn-on module and the gate module; the first end of the turn-on module is connected to the gate of the power semiconductor, and the first end of the gate module is connected to the gate of the power semiconductor. By adding a cathode module to the cathode of the power device, the turn-on or disconnection of the power device is achieved by the conduction or disconnection of the turn-on module, the gate module, and the cathode module, without the need for recharging after each turn-off, reducing the problem of excessive power of the power device caused by traditional drive circuits and drive methods. At the same time, the switching frequency of the power device is increased, and by adding a cathode module to the cathode of the power device, the power device has a positive temperature characteristic, improving the turn-off gain of the power device, thereby improving the working performance of the power device.

[0057] Based on the above embodiments, in one embodiment, as Figure 3As shown, the gate module 10 includes a first switch 101; the cathode module 20 includes a second switch 201; the turn-on module 30 includes a third switch 301 and a charge-discharge component 302; wherein, the first end of the second switch 201 is connected to the cathode of the power semiconductor 01, and the second end of the second switch 201 is respectively connected to the second ends of the first switch 101 and the third switch 301; the first end of the third switch 301 is connected to the second end of the charge-discharge component 302, the first end of the charge-discharge component 302 is connected to the gate of the power semiconductor 01, and the first end of the second switch 201 is connected to the gate of the power semiconductor 01.

[0058] In the embodiment of the present application, the turn-on module 30, the cathode module 20, and the gate module 10 all include switching devices. Specifically, the gate module 10 includes a first switch 101, the cathode module 20 includes a second switch 201, and the turn-on module 30 includes a third switch 301 and a charge-discharge component 302, as Figure 3 shown, the charge-discharge component 302 can be disposed at a first position in the turn-on module 30. The first end of the second switch 201 is connected to the cathode of the power semiconductor 01, and the second end of the second switch 201 is respectively connected to the second ends of the first switch 101 and the third switch 301; the first end of the third switch 301 is connected to the second end of the charge-discharge component 302, the first end of the charge-discharge component 302 is connected to the gate of the power semiconductor 01, and the first end of the second switch 201 is connected to the gate of the power semiconductor 01. Optionally, the charge-discharge component 302 can be at least one of a capacitor and an inductor.

[0059] As another alternative embodiment, the gate module 10 includes a first switch 101; the cathode module 20 includes a second switch 201; the turn-on module 30 includes a third switch 301 and a charge-discharge component 302; wherein, as Figure 4 shown, the charge-discharge component 302 can be disposed at a second position in the turn-on module 30. The first end of the second switch 201 is connected to the cathode of the power semiconductor 01, and the second end of the second switch 201 is respectively connected to the second ends of the first switch 101 and the charge-discharge component 302; the first end of the charge-discharge component 302 is connected to the second end of the third switch 301, the first end of the third switch 301 is connected to the gate of the power semiconductor 01, and the first end of the second switch 201 is connected to the gate of the power semiconductor 01.

[0060] As another alternative embodiment, the gate module 10 includes a first switch 101; the cathode module 20 includes a second switch 201; the turn-on module 30 includes a third switch 301, a turn-on inductor 303, and a turn-on capacitor 304; wherein, as Figure 5As shown, the first end of the second switch 201 is connected to the cathode of the power semiconductor 01. The second end of the second switch 201 is respectively connected to the first switch 101 and the second end of the turn-on inductor 303. The first end of the turn-on inductor 303 is connected to the second end of the third switch 301. The first end of the third switch 301 is connected to the second end of the turn-on capacitor 304. The first end of the turn-on capacitor 304 is connected to the gate of the power semiconductor 01. The first end of the second switch 201 is connected to the gate of the power semiconductor 01.

[0061] The traditional drive circuit realizes the on or off of the power device by controlling a single switch in cooperation with a capacitor, and cannot provide a positive temperature characteristic for the drive process of the power device. The turn-off gain completely depends on the process of the device itself. In the embodiment of the present application, the gate module 10 may not include a capacitor, and by controlling the conduction or disconnection of the first switch 101, the second switch 201, and the third switch 301, the on or off of the power device is realized.

[0062] Optionally, the first switch 101, the second switch 201, and the third switch 301 may be any one of a field effect transistor MOS, a DirectFET, a silicon carbide IGBT, or a MOS, a junction field effect transistor (JFET), and a high electron mobility transistor (HEMT).

[0063] Optionally, the first switch 101 may be composed of one switching device, or may be composed of multiple switching devices connected in parallel or in series; the second switch 201 may be composed of one switching device, or may be composed of multiple switching devices connected in parallel or in series; the third switch 301 may be composed of one switching device, or may be composed of multiple switching devices connected in parallel or in series.

[0064] In this embodiment, the first switch, the second switch, and the third switch cooperate to work, so that the power device has a positive temperature characteristic during the current-carrying process, thereby obtaining a higher turn-off gain and a lower drive power.

[0065] Based on the above embodiment, in one embodiment, as Figure 6 shown, the drive circuit further includes a maintenance module 40. The first end of the maintenance module 40 is connected to the cathode of the power semiconductor 01 in the power device. The second end of the maintenance module 40 is respectively connected to the second ends of the turn-on module 30, the cathode module 20, and the gate module 10

[0066] In the embodiment of the present application, the turn-on module 30 and the maintenance module 40 are connected in parallel with the gate module 10. The turn-on module 30, the gate module 10, and the cathode module 20 are used to control the conduction and turn-off of the switching device. The maintenance module 40 is used to maintain the normal operating state of the power device. The turn-on module 30 includes a third switch 301. The first end of the second switch 201 is connected to the cathode of the power semiconductor 01. The second end of the second switch 201 is respectively connected to the first switch 101 and the second end of the turn-on inductor 303. The first end of the turn-on inductor 303 is connected to the second end of the third switch 301. The first end of the third switch 301 is connected to the second end of the turn-on capacitor 304. The first end of the turn-on capacitor 304 is connected to the gate of the power semiconductor 01. The first end of the second switch 201 is connected to the gate of the power semiconductor 01.

[0067] Optionally, as Figure 6 shown, the drive circuit further includes: a power management module 50. One end of the power management module 50 is connected to the external power supply 02. The other end of the power management module 50 is respectively connected to the turn-on module 30, the gate module 10, and the cathode module 20. The power management module 50 is used to provide operating voltages for the turn-on module 30, the gate module 10, and the cathode module 20. Optionally, the other end of the power management module 50 can also be connected to the maintenance module 40 to provide an operating voltage for the maintenance module 40.

[0068] In this embodiment, the turn-on and maintenance module group includes a turn-on module and a maintenance module. The drive circuit further includes a power management module, so that the drive circuit can drive the conduction and disconnection of the power device and can also drive the power device to operate normally.

[0069] In one embodiment, as Figure 7 shown, a driving method for a power device is provided. This method is used for a driving system. The driving system includes a controller and the above-mentioned drive circuit. The method includes:

[0070] S201, according to the first control strategy, control the turn-on module, the gate module, and the cathode module to be in a conduction state or a disconnection state to turn on the power device.

[0071] In the embodiment of the present application, the first control strategy is the control strategy for turning on the power device. The first control strategy makes the turn-on module, the gate module, and the cathode module cooperate to work by controlling the turn-on module, the gate module, and the cathode module to be in a conduction state or a disconnection state, so as to turn on the power device.

[0072] Optionally, the gate module includes a first switch, the cathode module includes a second switch, and the turn-on maintenance module includes a third switch. According to the first control strategy, the first switch, the second switch, and the third switch are controlled to be in a conducting state or a non-conducting state to turn on the power device. Exemplarily, the first control strategy may be to turn on the first switch and / or the second switch and / or the third switch at a preset first moment, and turn off the first switch and / or the second switch and / or the third switch at a preset second moment to turn on the power device.

[0073] S202. According to the second control strategy, the gate module and the cathode module are controlled to be in a conducting state or a non-conducting state to turn off the power device.

[0074] In an embodiment of the present application, the second control strategy is a control strategy for turning on the power device. The second control strategy controls the turn-on module, the gate module, and the cathode module to be in a conducting state or a non-conducting state, so that the turn-on module, the gate module, and the cathode module cooperate to work to turn off the power device.

[0075] Optionally, the gate module includes a first switch, the cathode module includes a second switch, and the turn-on maintenance module includes a third switch. According to the first control strategy, the first switch, the second switch, and the third switch are controlled to be in a conducting state or a non-conducting state to turn off the power device. Exemplarily, the second control strategy may be to turn off the first switch and / or the second switch and / or the third switch at a preset third moment, and turn on the first switch and / or the second switch and / or the third switch at a preset fourth moment to turn off the power device.

[0076] In the above driving method of the power device, according to the first control strategy, the turn-on module, the gate module, and the cathode module are controlled to be in a conducting state or a non-conducting state to turn on the power device; according to the second control strategy, the turn-on module, the gate module, and the cathode module are controlled to be in a conducting state or a non-conducting state to turn off the power device. By adding a cathode module to the cathode of the power device, the turn-on or turn-off of the power device is realized through the conduction or disconnection of the turn-on maintenance module, the gate module, and the cathode module, without recharging after each turn-off, reducing the problem of excessive power of the power device caused by the traditional driving circuit and driving method. At the same time, the switching frequency of the power device is increased, and by adding a cathode module to the cathode of the power device, the power device has a positive temperature characteristic, improving the turn-off gain of the power device, thereby improving the working performance of the power device.

[0077] In one embodiment, an implementation manner of the above S201 is provided, as Figure 8 shown, the above "According to the first control strategy, the turn-on module, the gate module, and the cathode module are controlled to be in a conducting state or a non-conducting state to turn on the power device" includes:

[0078] S301. At the first moment when the power device operates, control the cathode module to be in the conducting state.

[0079] S302. At the second moment when the power device operates, control the turn-on module to be in the conducting state and control the gate module to be in the off state; the first moment is earlier than the second moment.

[0080] S303. At the third moment when the power device operates, control the turn-on module to be in the off state; the second moment is earlier than the third moment.

[0081] In the embodiment of the present application, before turning on the power device, the gate module is in the conducting state, and the turn-on module and the cathode module are in the off state. According to the first control strategy, the controller sends turn-off or turn-on instructions to the turn-on module, the cathode module, and the gate module to turn on the power device.

[0082] Optionally, as Figure 5 shown, the gate module includes a first switch, the cathode module includes a second switch, and the turn-on module includes a third switch. Before turning on the power device, the first switch is in the conducting state, and the second switch and the third switch are in the off state. According to the first control strategy, at the first moment when the power device operates, the controller sends a turn-on instruction to the second switch in the cathode module to make the second switch in the conducting state, ensuring that a path is formed at the cathode. At the second moment when the power device operates, the controller sends a turn-off instruction to the first switch in the gate module to make the first switch in the off state, thereby disconnecting the gate circuit, and the controller sends a turn-on instruction to the third switch in the turn-on module to make the third switch conduct, and an injection current is formed through the capacitor and inductor to turn on the power device. Further, after the power device is turned on, at the third moment when the power device operates, the controller sends a turn-off instruction to the third switch in the turn-on module to make the third switch in the off state, and the working state of the power device is maintained by the maintenance module in the test circuit.

[0083] In this embodiment, according to the first control strategy, control the turn-on module, the gate module, and the cathode module to cooperate and be in the conducting state or the off state in a preset order to turn on the power device.

[0084] In one embodiment, an implementation manner of the above S202 is provided. As Figure 9 shown, the above "According to the second control strategy, control the turn-on module, the gate module, and the cathode module to be in the conducting state or the off state to turn off the power device" includes:

[0085] S401. At the fourth moment when the power device operates, control the gate to be in the conducting state.

[0086] S402. At the fifth moment when the power device operates, control the cathode module to be in the off state; the fourth moment is earlier than the fifth moment.

[0087] In the embodiment of the present application, before the power device is turned on, the gate module is in an off state and the cathode module is in an on state. According to the second control strategy, the controller sends off or on commands to the cathode module and the gate module to turn off the power device.

[0088] Optionally, the gate module includes a first switch, and the cathode module includes a second switch. Before the power device is turned off, the first switch is in an off state and the second switch is in an on state. According to the second control strategy, at the fourth moment when the power device is operating, the controller sends an on command to the first switch in the gate module to make the first switch in an on state, ensuring that a path is formed for the gate, and the cathode commutates to the gate. At the fifth moment when the power device is operating, the controller sends an off command to the second switch in the cathode module to make the second switch in an off state, completing the turn-off process.

[0089] In this embodiment, according to the first control strategy, the turn-on module, the gate module, and the cathode module are controlled to cooperate and be in an on state or an off state in a preset order to turn off the power device.

[0090] In one embodiment, a power device is provided, and the power device includes the drive circuit of the above-mentioned power device.

[0091] In this embodiment, the type of the power device is not limited herein. In addition, for the drive circuit and working principle of the power device included in the power device provided in this embodiment, please refer to the detailed description of the drive circuit and drive method in the above embodiment, and this embodiment will not be elaborated herein.

[0092] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0093] The above-described embodiments only represent several implementation manners of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A driving circuit for a power device, characterized in that: The driving circuit comprises: an opening module, a gate module and a cathode module; Wherein, the first end of the cathode module is connected to the cathode of the power semiconductor in the power device, and the second end of the cathode module is connected to the second ends of the opening module and the gate module respectively; the first end of the opening module is connected to the gate of the power semiconductor, and the first end of the gate module is connected to the gate of the power semiconductor; The driving circuit controls the on or off combination of the opening module, the gate module and the cathode module to control the on or off of the power device. During the control process, there is no need to recharge the module after each shutdown. The gate module includes a first switch; the cathode module includes a second switch; the opening module includes a third switch and a charge and discharge component; Wherein, the first end of the second switch is connected to the cathode of the power semiconductor, and the second end of the second switch is respectively connected to the second ends of the first switch and the third switch; the first end of the third switch is connected to the second end of the charge and discharge component, the first end of the charge and discharge component is connected to the gate of the power semiconductor, and the first end of the second switch is connected to the gate of the power semiconductor; or, the first end of the second switch is connected to the cathode of the power semiconductor, and the second end of the second switch is respectively connected to the second end of the first switch and the charge and discharge component; the first end of the charge and discharge component is connected to the second end of the third switch, the first end of the third switch is connected to the gate of the power semiconductor, and the first end of the second switch is connected to the gate of the power semiconductor.

2. The driving circuit according to claim 1, characterized in that: The gate module includes a first switch; the cathode module includes a second switch; the opening module includes a third switch, and the charge and discharge component includes an opening inductor and an opening capacitor; Among them, the first end of the second switch is connected to the cathode of the power semiconductor, the second end of the second switch is respectively connected to the first switch and the second end of the turn-on inductor, the first end of the turn-on inductor is connected to the second end of the third switch, the first end of the third switch is connected to the second end of the turn-on capacitor, the first end of the turn-on capacitor is connected to the gate of the power semiconductor, and the first end of the second switch is connected to the gate of the power semiconductor.

3. The driving circuit according to claim 1 or 2, characterized in that: The driving circuit also includes a maintaining module, a first end of which is connected to the cathode of the power semiconductor in the power device, and a second end of which is respectively connected to the second ends of the opening module, the cathode module and the gate module.

4. The driving circuit according to claim 1 or 2, characterized in that: The driving circuit further includes: a power management module, one end of which is connected to an external power source, and the other end of which is respectively connected to the opening module, the gate module and the cathode module.

5. A method for driving a power device, characterized in that: The method is used for a driving system, the driving system comprising a controller and a driving circuit according to any one of claims 1 to 4, and the method comprises: According to a first control strategy, controlling the opening module, the gate module and the cathode module to be in an on state or an off state to open the power device; According to the second control strategy, the gate module and the cathode module are controlled to be in an on state or an off state to disconnect the power device.

6. The method according to claim 5, characterized in that According to the first control strategy, controlling the opening module, the gate module and the cathode module to be in an on state or an off state to open the power device includes: At the first moment when the power device is working, controlling the cathode module to be in a conducting state; At a second moment when the power device is working, the opening module is controlled to be in an on state, and the gate module is controlled to be in an off state; the first moment is earlier than the second moment; At a third moment when the power device is working, the opening module is controlled to be in a disconnected state; and the second moment is earlier than the third moment.

7. The method according to claim 5, characterized in that According to the second control strategy, controlling the gate module and the cathode module to be in an on state or an off state to disconnect the power device includes: At a fourth moment when the power device is operating, controlling the gate to be in an on state; At a fifth moment when the power device is operating, the cathode module is controlled to be in a disconnected state; and the fourth moment is earlier than the fifth moment.

8. A power device, characterized in that: The power device comprises the driving circuit according to any one of claims 1 to 4.

Images