A semiconductor assembly including a first semiconductor element and a first connecting element

Abstract

The present invention discloses a semiconductor assembly (2) having a semiconductor element (4) and at least one connecting element (22, 24, 26), wherein the semiconductor element (4) has at least one contact (10, 12, 14), and wherein at least one connecting element (22, 24, 26) is connected to the contact (10, 12, 14) of the semiconductor element (4). To improve the heat dissipation of the semiconductor assembly (2) in a low-cost and simple manner, it is proposed that the connecting element (22, 24, 26) have a cooling channel structure (30) with at least one cooling channel (32), which is manufactured at least in part by means of the FSC method.

Description

Technical Field

[0001] The present invention discloses a semiconductor assembly having a semiconductor element and at least one connecting element, wherein the semiconductor element has at least one contact, wherein at least one connecting element is connected to the contact of the semiconductor element, wherein the connecting element is implemented as a bus and is connected to the contact of the power semiconductor module via a force-fit connection, particularly a bolted connection.

[0002] Furthermore, the present invention discloses a semiconductor assembly having a semiconductor element and at least one connecting element, wherein the semiconductor element has at least one contact, wherein at least one connecting element is connected to the contact of the semiconductor element, wherein the connecting element is implemented as a power semiconductor, which is disposed between a first substrate and a second substrate and is connected to at least the first substrate, particularly in material form.

[0003] Furthermore, the present invention discloses a power converter having at least one semiconductor component according to any one of the preceding claims.

[0004] Furthermore, the present invention discloses a method for manufacturing a semiconductor assembly having a semiconductor element and at least one connecting element, wherein the semiconductor element has at least one contact, wherein at least one connecting element is connected to the contact of the semiconductor element, wherein the semiconductor element is implemented as a power semiconductor module, and wherein the connecting element is implemented as a bus, which is connected to the contact of the power semiconductor module via a force-fit connection, particularly a bolted connection.

[0005] Furthermore, the present invention discloses a method for manufacturing a semiconductor assembly having a semiconductor element and at least one connecting element, wherein the semiconductor element has at least one contact, wherein at least one connecting element is connected to the contact of the semiconductor element, wherein the semiconductor element is implemented as a power semiconductor, which is disposed between a first substrate and a second substrate and is connected to at least the first substrate, particularly in material form. Background Technology

[0006] Such an arrangement can be used, for example, in power converters. A power converter can be understood, for example, as a rectifier, inverter, frequency converter, or DC-DC converter. The semiconductor components in a power converter are typically implemented in the form of power semiconductor modules, which are contacted, for example, via busbars. Enhanced miniaturization can be achieved, for example, through planar construction and interconnection techniques.

[0007] Patent application WO 2020 / 249479 A1 describes an electrical circuit having first and second circuit supports and first and second semiconductor elements. The upper side of the first semiconductor element abuts against the lower side of the first circuit support, and its lower side abuts against the upper side of the second circuit support. The first circuit support has a first through-hole plated, which connects the first semiconductor element to a first guide rail. The first circuit support has a second through-hole plated, which connects a connecting element disposed between the circuit supports to another guide rail. A material-fit connection is established between the circuit supports via the first connecting element. The second semiconductor element abuts against the lower side of the first circuit support and is electrically connected to either the first or second guide rail.

[0008] The miniaturization of power electronics in power converters, especially with the application of such planar construction and interconnection technologies, presents challenges related to the heat dissipation of semiconductor components, while ensuring high reliability in a smaller footprint and considering manufacturing costs.

[0009] Patent application EP 3 823 018 A1 describes an electronic module. The electronic module includes a pulsed heat pipe having a channel structure in which a heat transfer medium is disposed, and at least one electrical component that is in direct contact with the heat transfer medium and / or connected to a conductive contact element.

[0010] Patent document DE 10 2008 063 724 B4 describes a bus arrangement comprising: a plurality of buses arranged in a vertical stack configuration including a first DC bus, a second DC bus, and an AC bus disposed therebetween; a plurality of power semiconductor devices contacting and mounted therebetween the plurality of buses; wherein at least one of the buses includes an integrated cooling system.

[0011] Patent application WO 2006 / 058860 A2 describes a heat exchange device having at least one layer connection with layers and at least one additional layer, wherein a fluid channel for conducting temperature-regulating fluid is arranged between the layer and the additional layer, the fluid channel being confined by the two layers and at least one of the layers having a plastic membrane.

[0012] The publication "A review on friction stir-based channeling" by KPMehta et al. describes the FSC method.

[0013] Patent application US2004 / 060965 A1 describes internal channels for use in a metal object in an application, in which internal fluid flow is desired within the metal object as in a heat exchanger. The internal channels are formed within the metal object by frictional agitation using a rod immersed in the metal object and traversing the metal object using the rod.

[0014] The publication "Friction Stir Channeling Industrial Applications Prototype Design and Production Mechanical Engineering Review" by M. Filgueiras et al. describes the FSC method. Summary of the Invention

[0015] Against this background, the object of the present invention is to provide a semiconductor component with improved heat dissipation that can be manufactured in a low-cost and simple manner.

[0016] According to the invention, this objective is thus achieved in a semiconductor component of the type described at the beginning, namely, a bus having a closed cooling channel structure with at least one cooling channel, which is manufactured at least in part by means of the FSC method, wherein the bus has at least one cover plate, and at least one cooling channel of the cooling channel structure is arranged to extend through the cover plate.

[0017] Furthermore, according to the invention, this objective is thus achieved in a semiconductor component of the type described at the beginning, wherein the connecting element has a closed cooling channel structure with at least one cooling channel, which is manufactured at least in part by means of the FSC method, wherein the connecting element is connected to the power semiconductor via a contact of a first substrate, wherein the power semiconductor and the connecting element are thermally connected via the first substrate.

[0018] Furthermore, according to the present invention, this objective is achieved by a power converter having at least one such semiconductor component.

[0019] Furthermore, according to the invention, this objective is thus achieved in the method described at the beginning, namely, in the busbar, a closed cooling channel structure with at least one cooling channel is manufactured at least in part by means of the FSC method, wherein the busbar has at least one cover plate, and at least one cooling channel of the cooling channel structure is arranged to extend through the cover plate.

[0020] Furthermore, according to the invention, this objective is thus achieved in the method described at the beginning, namely, in the connection element, a closed cooling channel structure with at least one cooling channel is manufactured at least partially by means of the FSC method, wherein the connection element is connected to the power semiconductor via a contact of a first substrate, wherein the power semiconductor and the connection element are thermally connected via the first substrate.

[0021] The advantages and preferred design schemes of the semiconductor components, which are cited below, can be reasonably transferred to the power converter and manufacturing method.

[0022] The object of this invention is to improve the reliability of semiconductor assemblies having semiconductor elements, wherein heat dissipation of the semiconductor elements is improved at low cost and simplicity. The semiconductor elements are, for example, power semiconductor modules that can be arranged in a housing and have at least one contact. However, the semiconductor elements can also be implemented as, in particular, vertical semiconductors, especially insulated-gate bipolar transistors (IGBTs). At least one connecting element is connected to the contacts of the semiconductor element. Furthermore, the connecting element can be made of a metallic material, a polymer, or a polymer matrix and configured for thermally conductive contact with the semiconductor element. For example, the connecting element is implemented as a bus or a contact and / or support element.

[0023] To ensure improved heat dissipation, a cooling channel structure with at least one cooling channel is arranged in the connecting elements. This results in improved heat dissipation, particularly at high integration densities, and also improves the heat dissipation of at least one semiconductor element. For example, the heat generated by the operation of the semiconductor element is dissipated into the surrounding environment, especially the ambient air, via thermal conduction, thermal radiation, and / or convection.

[0024] The cooling channels in the connecting element's cooling channel structure are manufactured at least in part by means of the FSC method. The FSC method, or friction stir channel, is a further development of friction stir welding, in which the friction stir method is modified so that the material is intentionally moved out of the workpiece material, thus forming a channel. This method allows for the simple and low-cost manufacture of cooling channels. In particular, the FSC method allows for the low-cost and precise fabrication of fragile cooling channels as close as possible to the semiconductor element in such connecting elements. The FSC method also allows for flexible extension of the cooling channel structure depending on the geometry of the component.

[0025] The semiconductor element is implemented as a power semiconductor module, wherein the connecting element is implemented as a bus, which is connected to the first contact of the power semiconductor module via a force-fit connection, particularly a bolted connection. Such a power semiconductor module includes, for example, a power semiconductor disposed in a housing and further has a load interface, which contacts via the bus. The bolted connection for contact is reliable and has low thermal resistance. High current can occur in such a bus that contacts the load interface. Furthermore, the power semiconductor can dissipate heat partially via the bus. Improved heat dissipation to the surrounding environment is achieved through cooling channels arranged in the bus, thereby improving the heat dissipation of the semiconductor component.

[0026] The busbar has at least one cover plate, and at least one cooling channel of the cooling channel structure is arranged to extend through the cover plate. Furthermore, such a cover plate can be used to contact the load interface of the power semiconductor module, thereby allowing at least one cooling channel to be arranged very close to the power semiconductor module, which enables improved heat transfer and efficient heat dissipation.

[0027] The semiconductor element is implemented as a power semiconductor, disposed between a first substrate and a second substrate and connected, in particular, to the first substrate in a material-mate manner. A connecting element is connected to the power semiconductor via contacts on the first substrate, and the power semiconductor and the connecting element are thermally connected via the first substrate. Furthermore, such a material-mate connection can be a solder connection and / or a sintered connection, but it can also be an adhesive connection, such as using conductive or thermally conductive adhesive. Additionally, the power semiconductor can be implemented as a vertical power transistor, particularly an insulated-gate bipolar transistor (IGBT). Other examples of such a power semiconductor are other transistor types, such as field-effect transistors, or bidirectional thyristors, thyristors, and diodes. Furthermore, the connecting element can function as both a contact and support element. Improved heat dissipation can be achieved through a cooling channel structure disposed in the connecting element. For example, such a connecting element can be used in areas of hot spots.

[0028] Another embodiment is configured such that the connecting element has a closed cooling channel structure. Such a closed cooling channel structure does not have an external interface for draining the heat transfer fluid during operation. Furthermore, a thermosiphon or heat pipe can be formed through such a closed channel structure. If the closed cooling channel structure forms a closed loop, then a pulsed heat pipe can be formed. Because the heat transfer fluid does not need to be introduced or exported via an external interface during operation, and thus eliminates the need for additional components such as pumps, the connection with the closed cooling channel structure is simple to manufacture and operate at low cost.

[0029] Another embodiment involves making the connecting element from a conductive material, particularly a metallic material, and configuring it with conductive contacts for the points of contact. Furthermore, the connecting element can comprise copper, aluminum, silver, gold, tin, or alloys thereof, thereby enabling the creation of good electrical and thermodynamic connections.

[0030] Another embodiment involves a cooling channel structure in which at least one cooling channel extends in a tortuous manner within the connecting element. This tortuous cooling channel structure can be manufactured over a large area during process steps using the FSC method, and is simple and low-cost, enabling effective heat dissipation and heat dispersion.

[0031] Another embodiment involves a cooling channel structure comprising a heat transfer fluid. Such a fluid can be electrically or non-electrically conductive. Air, particularly deionized water, mixtures of water and glycol, insulating fluids, and / or oil are also considered. Therefore, heat transfer can be achieved simply and at low cost.

[0032] Another embodiment involves using a heat transfer fluid for two-phase cooling. This could be, for example, a thermosiphon, heat pipe, or pulsed heat pipe for two-phase cooling. In particular, perfluoroalkylmorpholine is more suitable for two-phase cooling than non-conductive heat transfer media due to its high thermal conductivity, boiling point, and insulating properties. Effective heat dissipation can be achieved through such two-phase cooling.

[0033] Another embodiment involves at least one cooling channel having an opening manufactured using the FSC method, wherein the opening is configured for injecting heat transfer fluid. Such an opening typically occurs as a byproduct during the FSC method. Using an opening for injecting heat transfer fluid further simplifies the manufacturing process and reduces manufacturing costs further by decreasing the number of production steps.

[0034] Another embodiment involves assembling connecting elements for mechanically and / or thermodynamically connecting the substrate. This reduces the number of components required and the space needed for the semiconductor assembly. Heat dissipation can thus be achieved simply and at low cost, particularly in the area of ​​hot spots.

[0035] Another embodiment involves making the connecting element from a conductive material, particularly a metallic material, and configuring it for a conductive connection between the first and second substrates. The high thermal conductivity of the metallic material enables efficient heat transfer. Using connecting elements designed for manufacturing wire connections reduces the number of components required and the space needed for the semiconductor assembly. Attached Figure Description

[0036] The present invention will now be described and illustrated in detail with reference to the embodiments shown in the accompanying drawings.

[0037] This is shown here:

[0038] Figure 1 A schematic cross-sectional view of a first embodiment of a semiconductor component is shown.

[0039] Figure 2 A schematic three-dimensional diagram illustrating a second embodiment of the semiconductor component is shown.

[0040] Figure 3 A schematic three-dimensional diagram illustrating a third embodiment of the semiconductor component is shown.

[0041] Figure 4 A schematic top view showing a first embodiment of the busbar is shown.

[0042] Figure 5 A schematic top view showing a second embodiment of the busbar is shown.

[0043] Figure 6 A schematic top view showing a third embodiment of the busbar is shown.

[0044] Figure 7 A schematic cross-sectional view of a fourth embodiment of the semiconductor component is shown.

[0045] Figure 8 This diagram illustrates the fabrication of cooling channels in connecting elements using the FSC method.

[0046] Figure 9 A schematic diagram of a power converter is shown.

[0047] The embodiments described below are preferred embodiments of the present invention. The components described in the embodiments represent various independently noteworthy features of the present invention, each independently improving the present invention and also considered as part of the present invention individually or in combinations different from those shown.

[0048] The same reference numerals have the same meaning in different figures. Detailed Implementation

[0049] Figure 1A schematic cross-sectional view of a first embodiment of a semiconductor assembly 2 including a first semiconductor element 4 is shown, the first semiconductor element being designed as a power semiconductor module 6. The power semiconductor module 6 has a housing 7 and a plurality of power semiconductors 8, which can also be designed as, in particular, vertical transistors, such as insulated-gate bipolar transistors (IGBTs) or other transistor types, as well as triacs, thyristors, and / or diodes. Furthermore, the power semiconductor module 6 includes, for example, three contacts 10, 12, 14, designed as a load interface 16. The contacts 10, 12, 14 of the power semiconductor module 6 are connected to connecting elements 22, 24, 26 via force-fitting connections 18, for example, designed as bolted connections 20. The connecting elements 22, 24, 26 are designed as busbars 28, which are insulated from and overlap each other in the vertical direction v. The busbars 28 are made of conductive material, particularly metallic material, and configured for conductive connections of the power semiconductors 8 in the power semiconductor module 6. For example, the busbars 28 comprise copper, aluminum, silver, gold, tin, or alloys thereof. For example, the heat generated by the operation of the power semiconductor 8 in the power semiconductor module 6 is dissipated into the surrounding environment, particularly the surrounding air, via thermal conduction, thermal radiation, and / or convection.

[0050] Connecting elements 22, 24, and 26 each have a cooling channel structure 30 with at least one cooling channel 32. A heat transfer fluid 34 is arranged within the cooling channel structure 30, configured for two-phase cooling. For example, the cooling channel structure 30 can be used to form a thermosiphon, heat pipe, or pulsed heat pipe, thereby achieving improved heat transfer and heat dispersion. The openings for filling the cooling channel structure 30 are, for simplicity reasons... Figure 1 Not shown in the diagram. The second connecting element 24 and the third connecting element 26 of the overlapping connecting elements 22, 24, 26 each have a cover plate 36, and the connection to the corresponding contacts 12, 14 of the power semiconductor module 6 via the cover plate is established by means of bolt connection 20, wherein at least one cooling channel 32 of the cooling channel structure 30 is arranged to extend through the corresponding cover plate 36.

[0051] The cooling channel 32 of the cooling channel structure 30 is manufactured using the FSC (Friction Stir Channeling) method. This FSC method is a further development of friction stir welding, in which the friction stir method is modified so that material is intentionally extracted from the workpiece material, thus forming a channel. Furthermore, the cooling channel 32 manufactured using the FSC method can have a angular, particularly rectangular or square, cross-section. This FSC method allows for the simple and low-cost manufacture of cooling channels.

[0052] Figure 2A schematic three-dimensional view of a second embodiment of the semiconductor component 2 is shown, which includes additional, for example, parallel power semiconductor modules 6, screwed onto a common heat sink 38 and being at least thermally conductive. First contacts 10 of the power semiconductor modules 6 are in contact via a common first connecting element 22, which is designed as a bus. The contacts are established via bolt connections 20. A closed cooling channel structure 30 has cooling channels 32 arranged in a tortuous manner extending within the first connecting element 22 and containing a heat transfer fluid 34, wherein the cooling channel structure 30 with the heat transfer fluid 34 is designed as a pulsed heat pipe. Heat generated during operation of the power semiconductor modules 6 is dissipated to the surrounding environment, particularly the ambient air, for example, via thermal conduction, thermal radiation, and / or convection. Figure 2 Another design scheme for semiconductor component 2 in the middle corresponds to Figure 1 In.

[0053] Figure 3 A schematic three-dimensional view of a third embodiment of the semiconductor component 2 is shown, the semiconductor component additionally having a common second connection element 24 designed as a bus. The common second connection element 24, arranged in the vertical direction v via a common first connection element 22, is connected to the second contact 12 of the power semiconductor module 6 via a cover plate 36 and bolt connections 20. The closed cooling channel structure 30 of the second connection element 24 has cooling channels 32 that extend in a tortuous manner within the second connection element 24 and contain a heat transfer fluid 34, wherein the cooling channel structure 30 containing the heat transfer fluid 34 is designed as a pulsed heat pipe. Figure 3 Another design scheme for semiconductor component 2 corresponds to Figure 2 In.

[0054] Figure 4 A schematic top view of a first embodiment of the busbar 28 is shown, wherein the busbar 28 is designed as an exemplary busbar having three cover plates 36. An exemplary three closed cooling channels 32 of the cooling channel structure 30 are designed to extend within the cover plates 36 and are further capable of forming heat pipes or thermosiphons. The cooling channels 32, manufactured by means of the FSC method, each have an opening 40 manufactured by means of the FSC method, which closes after the cooling channel 32 is filled with a heat transfer fluid 34. Figure 4 The other design scheme for bus 28 in the middle corresponds to Figure 3 In.

[0055] Figure 5A schematic top view of a second embodiment of the busbar 28 is shown, in which the cooling channels 32 of the closed cooling channel structure 30 are arranged in a tortuous manner and extend through, for example, three cover plates 36. The cooling channels 32, manufactured by means of the FSC method, have openings 40 manufactured by means of the FSC method, which close after the cooling channels 32 are filled with heat transfer fluid 34. The tortuously extended cooling channel structure 30, together with the heat transfer fluid 34, forms a pulsed heat pipe. Figure 5 The other design scheme for bus 28 in the middle corresponds to Figure 4 In.

[0056] Figure 6 A schematic top view of a third embodiment of the busbar 28 is shown. Exemplarily, one of the three open cooling channels 32 of the cooling channel structure 30 is formed, for example, extending through one of the three cover plates 36. Furthermore, each cooling channel 32 has a fluid inlet 42 arranged on both sides for externally conveying heat transfer fluid 34.

[0057] Figure 7 A schematic cross-sectional view of a fourth embodiment of the semiconductor component 2 is shown, wherein the semiconductor element 4 is designed as a power semiconductor 8, which is disposed between a first substrate 44 and a second substrate 46 and connected to the substrates 44 and 46 by means of a material bond. Furthermore, the material bond connection can be a solder connection and / or a sintered connection, as well as an adhesive connection, for example, using a conductive and thermally conductive adhesive. The substrates 44 and 46 each have a dielectric material layer 48, a first metallization portion 50 disposed on the side facing the semiconductor element 4, and a second metallization portion 52 disposed on the side facing away from the semiconductor element 4. Furthermore, the dielectric material layer 48 can comprise a ceramic material, such as aluminum nitride or alumina, or an organic material, such as polyamide or epoxy resin.

[0058] The power semiconductor 8 is exemplarily designed as a vertical power transistor, particularly an insulated-gate bipolar transistor (IGBT). The power transistor is connected to the first metallization 50 of the second substrate 46 via a first contact 10, which is designed as a load interface 16, particularly a collector interface. On the opposite side of the first contact 10, the power transistor is connected to the first metallization 50 of the first substrate 44 via a second contact 12, which is designed as a load interface 16, particularly an emitter interface, and a third contact 14, which is designed as a control interface, particularly a gate interface.

[0059] The first connecting element 22 is electrically connected to the third contact 14 via the first metallization portion 50 of the first substrate 44, while the second connecting element 24 is electrically connected to the second contact 12 of the power semiconductor 8 via the first metallization portion 50 of the first substrate 44. Furthermore, the connecting elements 22 and 24 provide mechanical and thermodynamic connections between the substrates 44 and 46. Moreover, the connecting elements 22 and 24 are made of conductive materials, particularly metallic materials, and are configured for conductive connections between the first substrate 44 and the second substrate 46. Therefore, the connecting elements 22 and 24 also function as contact and support elements. An encapsulation material 54 is disposed between the substrates 44 and 46, and the semiconductor component 4 and the connecting elements 22 and 24 are embedded within the encapsulation material.

[0060] Furthermore, the connecting elements 22 and 24, which can be designed as squares, each have a closed cooling channel structure 30 with a tortuous cooling channel 32 extending in the respective connecting element 22 or 24. The cooling channel 32 of the cooling channel structure 30 is manufactured by means of the FSC method. A heat transfer fluid 34 is arranged in the cooling channel 32, and the heat transfer fluid is provided for two-phase cooling. The tortuously extending cooling channel 32 of the cooling channel structure 30, together with the heat transfer fluid 34, forms a pulsed heat pipe. Figure 7 Another design scheme for semiconductor component 2 in the middle corresponds to Figure 1 In.

[0061] Figure 8 A schematic diagram is shown of a cooling channel 32 manufactured in a connecting element 22 using the FSC method. A rotating probe 56 penetrates the connecting element 22 and travels in a direction of motion 58, wherein a shoulder 60 contacts the surface 62 of the connecting element 22. The metal material of the connecting element 22 is plasticized by the rotational movement of a rotating pin 64 with a threaded profile. A portion of the plasticized material 68 is extruded 66 via at least one extrusion opening 70. This material removal results in the formation of a closed cooling channel 32 extending below the surface 62.

[0062] Figure 9 A schematic diagram of a power converter 72 is shown, which exemplarily includes a semiconductor component 2.

[0063] In summary, the present invention discloses a semiconductor assembly 2 comprising a semiconductor element 4 and at least one connecting element 22, 24, 26, wherein the semiconductor element 4 has at least one contact 10, 12, 14, and wherein at least one connecting element 22, 24, 26 is connected to the contact 10, 12, 14 of the semiconductor element 4. To improve the cooling of the semiconductor assembly 2 in a low-cost and simple manner, the connecting elements 22, 24, 26 have a cooling channel structure 30 with at least one cooling channel 32, which is manufactured at least in part by means of the FSC method.

Claims

1. A semiconductor assembly (2) comprising a semiconductor element (4) and at least one connecting element (22, 24, 26), wherein, The semiconductor element (4) has at least one contact (10, 12, 14). At least one of the connecting elements (22, 24, 26) is connected to the contacts (10, 12, 14) of the semiconductor element (4). The semiconductor element (4) is designed as a power semiconductor module (6). The connecting elements (22, 24, 26) are designed as busbars (28), which are connected to the contacts (10, 12, 14) of the power semiconductor module (6) via force-fit connections (18). Its features are, The busbar (28) has a closed cooling channel structure (30), which has at least one cooling channel (32), which is at least partially formed by means of a stirring friction channel method. The busbar (28) has at least one cover plate (36), and at least one cooling channel (32) of the cooling channel structure (30) is arranged to extend through the cover plate.

2. The semiconductor component (2) according to claim 1, wherein, The force-fit connection (18) is a bolted connection (20).

3. A semiconductor assembly (2) comprising a semiconductor element (4) and at least one connecting element (22, 24, 26). in, The semiconductor element (4) has at least one contact (10, 12, 14). At least one of the connecting elements (22, 24, 26) is connected to the contacts (10, 12, 14) of the semiconductor element (4). The semiconductor element (4) is designed as a power semiconductor (8), which is disposed between a first substrate (44) and a second substrate (46) and is at least connected to the first substrate (44). Its features are, The connecting elements (22, 24, 26) have a closed cooling channel structure (30), which has at least one cooling channel (32), the cooling channel being formed at least partially by means of a stirring friction channel method. The connecting elements (22, 24, 26) are connected to the contacts (10, 12, 14) of the power semiconductor (8) via the first substrate (44). The power semiconductor (8) is thermally connected to the connecting elements (22, 24, 26) via the first substrate (44).

4. The semiconductor component (2) according to claim 3, wherein, The power semiconductor is at least bonded to the first substrate by means of material bonding.

5. The semiconductor component (2) according to any one of claims 1 to 4. in, The connecting elements (22, 24, 26) are made of conductive material and are configured to conductively contact the contacts (10, 12, 14).

6. The semiconductor component (2) according to claim 5, wherein, The conductive material is a metallic material.

7. The semiconductor component (2) according to any one of claims 1 to 4. in, At least one of the cooling channels (32) of the cooling channel structure (30) is arranged to extend in a tortuous manner in the connecting elements (22, 24, 26).

8. The semiconductor component (2) according to any one of claims 1 to 4. in, The cooling channel structure (30) contains a heat transfer fluid (34).

9. The semiconductor component (2) according to claim 8. in, The heat transfer fluid (34) is provided for two-phase cooling.

10. The semiconductor component (2) according to claim 8. in, At least one of the cooling channels (32) has an opening (40) made by means of the stirring friction channel method. The opening (40) is configured to inject the heat transfer fluid (34).

11. The semiconductor component (2) according to claim 3. in, The connecting elements (22, 24, 26) are provided for mechanically and / or thermally connecting the substrate (44, 46).

12. The semiconductor component (2) according to claim 3. in, The connecting elements (22, 24, 26) are made of conductive material and are configured to electrically connect the first substrate (44) to the second substrate (46).

13. The semiconductor component (2) according to claim 12, wherein, The conductive material is a metallic material.

14. A power converter (72) comprising at least one semiconductor component (2) according to any one of claims 1 to 4.

15. A method for manufacturing a semiconductor assembly (2) comprising a semiconductor element (4) and at least one connecting element (22, 24, 26), in, The semiconductor element (4) has at least one contact (10, 12, 14). At least one of the connecting elements (22, 24, 26) is connected to the contacts (10, 12, 14) of the semiconductor element (4). The semiconductor element (4) is designed as a power semiconductor module (6). The connecting elements (22, 24, 26) are designed as busbars (28), which are connected to the contacts (10, 12, 14) of the power semiconductor module (6) via force-fit connections (18). Its features are, In the busbar (28), a closed cooling channel structure (30) with at least one cooling channel (32) is at least partially manufactured by means of the friction stirring channel method. The busbar (28) has at least one cover plate (36), and at least one cooling channel (32) of the cooling channel structure (30) is arranged to extend through the cover plate.

16. The method according to claim 15, wherein, The force-fit connection (18) is a bolted connection (20).

17. A method for manufacturing a semiconductor assembly (2) comprising a semiconductor element (4) and at least one connecting element (22, 24, 26), in, The semiconductor element (4) has at least one contact (10, 12, 14). At least one of the connecting elements (22, 24, 26) is connected to the contacts (10, 12, 14) of the semiconductor element (4). The semiconductor element (4) is designed as a power semiconductor (8), which is disposed between a first substrate (44) and a second substrate (46) and is at least connected to the first substrate (44). Its features are, In the connecting elements (22, 24, 26), a closed cooling channel structure (30) with at least one cooling channel (32) is at least partially manufactured by means of the friction stirring channel method. The connecting elements (22, 24, 26) are connected to the contacts (10, 12, 14) of the power semiconductor (8) via the first substrate (44). The power semiconductor (8) is thermally connected to the connecting elements (22, 24, 26) via the first substrate (44).

18. The method according to claim 17, wherein, The power semiconductor is at least bonded to the first substrate by means of material bonding.

19. The method according to any one of claims 15 to 18, in, At least one of the cooling channels (32) of the cooling channel structure (30) is arranged to extend in a tortuous manner in the connecting elements (22, 24, 26).

20. The method according to any one of claims 15 to 18, in, Heat transfer fluid (34) is injected into the cooling channel structure (30), and the heat transfer fluid is provided for two-phase cooling.

21. The method according to any one of claims 15 to 18, in, An opening (40) is made in at least one of the cooling channels (32) by means of the friction stirring channel method. The opening is provided for injecting heat transfer fluid (34).

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