A heat dissipation structure for power MOSFET device with high heat dissipation

Abstract

The invention discloses a heat dissipation structure of a power MOSFET device with high heat dissipation, comprising a heat dissipation shell arranged outside a chip, a silicone heat conductive sheet arranged at the intersection of grooves of an electrode part and a chip, a heat conductive plate arranged on the outer sides of the silicone heat conductive sheet and the chip, the heat conductive plate covering the outer sides of the chip and the silicone heat conductive sheet, a groove arranged on the heat conductive plate, a heat dissipation leaf matched with the groove inserted in the groove, the heat dissipation leaf connected with a ventilation duct, and the ventilation duct provided with a second ventilation port and a first ventilation port. This structure not only realizes the transfer of heat generated in the electrode part and the chip to the silicone heat conductive sheet, but also the silicone heat conductive sheet strengthens the connection between the electrode part and the chip, making the connection between the electrode part and the chip more stable, and through the arrangement of the heat conductive plate, the heat in the heat conductive plate is concentrated and dispersed in the ventilation duct through the heat dissipation leaf, and the heat is dispersed outside the heat dissipation shell through the ventilation duct, thereby greatly improving the heat dissipation of the electrode part and the chip.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a heat dissipation structure of a power MOSFET device with high heat dissipation performance. Background Art

[0002] MOS tube is a special device with amplification function, which is called power MOSFET device. When MOS tube is in use, when MOS tube is in working state for a long time, a lot of power loss will be generated, and these power losses will be converted into heat. If the heat dissipation conditions are not good and the heat cannot be dissipated in time, it will cause the MOS tube to overheat. When the current exceeds the tolerance range of the MOS tube, it will cause the internal resistance of the tube to increase, and the voltage drop will also increase, thereby generating a lot of power loss. Excessive current will also increase the internal temperature of the MOS tube, which will cause overheating problems. If the heat cannot be dissipated well, it is easy to cause the working environment of the MOS tube to be too hot, affecting the service life and operation effect, and the high temperature cannot be dissipated, which can easily lead to safety hazards.

[0003] At present, the existing technology generally adopts natural heat dissipation, air cooling or water cooling. Liquid cooling is to take away heat through liquid circulation. This method has high heat dissipation efficiency, but the cost is relatively high. It is generally suitable for high-power and extremely high heat dissipation requirements. Natural heat dissipation uses natural convection and radiation to dissipate heat. This method has limited heat dissipation capacity and is usually only suitable for MOS tubes with lower power. Air cooling accelerates heat dissipation through forced convection generated by a fan. This method has a simpler structure and lower cost.

[0004] However, the air-cooled heat dissipation structure in the prior art has a poor effect. Since heat itself has a significant impact on the heat dissipation structure, the heat dissipation structure itself often fails due to excessive temperature and needs to be dismantled for maintenance. The maintenance structure in the prior art is often not flexible enough. Summary of the invention

[0005] The object of the present invention is to provide a heat dissipation structure of a power MOSFET device with high heat dissipation performance to solve the problems raised in the above background technology.

[0006] The purpose of the present invention can be achieved through the following technical solutions:

[0007] A heat dissipation structure of a power MOSFET device with high heat dissipation is used for heat dissipation of a chip and an electrode member. The two ends of the chip are respectively provided with electrode members, wherein the other end of one of the electrode members is connected to an anode lead, and the other end of the other electrode member is connected to a cathode lead. The heat dissipation structure comprises a heat dissipation shell arranged outside the chip, the heat dissipation shell is cylindrical, a silicone heat conductive sheet is arranged at the intersection of the grooves of the electrode member and the chip, the silicone heat conductive sheet is at the same height as the outer side surface of the chip, a heat conductive plate is arranged on the outer side surface of the silicone heat conductive sheet and the chip, the heat conductive plate covers the outer side surface of the chip and the silicone heat conductive sheet, a groove is arranged on the heat conductive plate, a heat dissipation leaf matching the groove is inserted in the groove, the other end of the heat dissipation leaf is connected to a ventilation duct, the ventilation duct is annularly distributed around the central axis of the heat dissipation shell, the ventilation duct is annularly distributed around the central axis of the heat dissipation shell and is provided with a second ventilation opening, the second ventilation opening is communicated with the inside of the ventilation duct, the second ventilation opening runs through the heat dissipation shell, and a plurality of first ventilation openings are arranged at both ends of the ventilation duct located at the heat dissipation shell, and the first ventilation openings are communicated with the inside of the ventilation duct.

[0008] Preferably, the ventilation duct is made of copper, and the ventilation duct is surrounded to form a hollow cylinder.

[0009] Preferably, the second vents are arranged in rows, with seven vents in one row.

[0010] Preferably, a top cover is provided between the ventilation duct and the anode lead, and a bottom cover is provided between the ventilation duct and the cathode lead, for dust prevention of the chip and the electrode member.

[0011] Preferably, an annular column cavity is provided in the ventilation duct, a superconducting liquid is provided in the annular column cavity, one end of the heat dissipation blade located in the ventilation duct extends into the annular column cavity, a plurality of heat conductive strips are provided on the side of the annular column cavity facing the heat dissipation shell, and the heat conductive strips extend out of the second ventilation port.

[0012] Preferably, the annular column cavity is configured as a hollow cylinder, the connection between the heat dissipation blade and the annular column cavity is sealed, and the connection between the annular column cavity and the heat conductive strip is sealed to prevent leakage of the superconducting liquid.

[0013] Preferably, a buckle is provided on one side wall of the ventilation duct, the middle part of the buckle is concave inward, and a slot matching the buckle is provided on the other side wall of the ventilation duct, and notches are provided on the left and right sides of the slot, the notches are connected to the slots, a spring is provided in the slot, and a stopper is fixedly connected to the end of the spring away from the notch, and the stopper is in the shape of a right-angled triangle.

[0014] Preferably, the size of the end portion of the buckle is larger than the size of the middle portion, a right-angled side of the stopper is connected to the spring, another right-angled side of the stopper is arranged inwardly, and the two stoppers are arranged opposite to each other.

[0015] Beneficial effects of the present invention:

[0016] 1. This structure not only realizes the transfer of heat generated in the electrode component and the chip to the silicone thermal conductive sheet through the setting of the silicone thermal conductive sheet, but also the silicone thermal conductive sheet strengthens the connection between the electrode component and the chip, making the connection between the electrode component and the chip more stable and enhancing the anti-interference ability of the power MOSFET device. Through the setting of the thermal conductive plate, the heat generated in the silicone thermal conductive sheet and the chip is transferred to the thermal conductive plate. The heat in the thermal conductive plate is concentrated and dispersed in the ventilation duct through the heat dissipation leaves. The heat passes through the ventilation duct and is dispersed outside the heat dissipation housing through the first ventilation port and the second ventilation port, which greatly improves the heat dissipation of the electrode component and the chip.

[0017] 2. This structure utilizes the high thermal conductivity of the superconducting liquid, so that the heat transferred to the ventilation duct through the heat dissipation leaves can not only be dissipated through the first ventilation port and the second ventilation port, but also can be quickly transferred to the heat conductive strip, that is, the outside of the heat dissipation shell, through the conduction of the superconducting liquid, which greatly improves the efficiency of heat dissipation from the ventilation duct. The structure is exquisite and efficient.

[0018] 3. This structure utilizes the inclined surface of the block facing the entrance of the card slot and the elastic potential energy of the spring, which greatly simplifies the installation of the ventilation duct inside the heat dissipation shell and is easy to disassemble, so that the chip and electrode parts can be inspected or maintained in time. The structure is exquisitely arranged, which significantly improves the flexibility of this structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be further described below in conjunction with the accompanying drawings.

[0020] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0021] Figure 2 It is a schematic diagram of the internal section of the present invention;

[0022] Figure 3 is a detailed diagram of the ventilation duct in the present invention;

[0023] Figure 4 yes Figure 3 The enlarged schematic diagram of point A in the middle;

[0024] Figure 5 It is a schematic diagram of the connection between the annular column cavity and the heat conducting strip in the present invention.

[0025] In the figure: 1. heat dissipation shell; 2. anode lead; 3. cathode lead; 4. chip; 5. electrode member; 6. silicone thermal conductive sheet; 7. first vent; 8. ventilation duct; 9. second vent; 10. thermal conductive plate; 11. superconducting liquid; 12. heat dissipation leaf; 13. buckle; 14. notch; 15. spring; 16. block; 17. slot; 18. top cover; 19. bottom cover; 20. annular column cavity; 21. thermal conductive strip. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] Embodiment 1:

[0028] Reference Figure 1 and Figure 2 As shown, the present invention is a heat dissipation structure of a power MOSFET device with high heat dissipation, which is used for heat dissipation of a chip 4 and an electrode member 5. The two ends of the chip 4 are respectively provided with electrode members 5, wherein the other end of one electrode member 5 is connected to an anode lead 2, and the other end of the other electrode member 5 is connected to a cathode lead 3. The structure includes a heat dissipation shell 1 arranged outside the chip 4, the heat dissipation shell 1 is cylindrical, and a silicone heat conductive sheet 6 is arranged at the intersection of the grooves of the electrode member 5 and the chip 4. The silicone heat conductive sheet 6 is at the same height as the outer side surface of the chip 4, and a heat conductive plate 10 is arranged on the outer side surface of the silicone heat conductive sheet 6 and the chip 4, and the heat conductive plate 10 covers the chip 4 and the silicone heat conductive sheet. On the outer side of the sheet 6, a groove is provided on the heat conducting plate 10, in which a heat dissipation leaf 12 matching the groove is inserted, and the other end of the heat dissipation leaf 12 is connected to a ventilation duct 8, and the ventilation duct 8 is distributed in a ring shape around the central axis of the heat dissipation shell 1. It should be supplemented that the ventilation duct 8 is a hollow plate-like body that can be bent inside after being unfolded, and the ventilation duct 8 is distributed in a ring shape around the central axis of the heat dissipation shell 1 with second ventilation openings 9, which are communicated with the interior of the ventilation duct 8, and the second ventilation openings 9 penetrate the heat dissipation shell 1, and a plurality of first ventilation openings 7 are provided at both ends of the ventilation duct 8, and the first ventilation openings 7 are communicated with the interior of the ventilation duct 8.

[0029] It should be noted that the ventilation duct 8 is made of copper, which is conducive to heat conduction. The ventilation duct 8 is surrounded by a hollow cylinder, wherein the hollow cylinder has a partition, which is the side wall of the ventilation duct 8 before it is surrounded. Figure 2As shown, the second ventilation openings 9 are arranged in rows at equal distances around the central axis of the heat dissipation housing 1. In the present embodiment, there are seven of them in one row. A top cover 18 is arranged between the ventilation duct 8 and the anode lead 2, and a bottom cover 19 is arranged between the ventilation duct 8 and the cathode lead 3, which are used for dust prevention of the chip 4 and the electrode member 5. The top cover 18 and the bottom cover 19 are respectively located at the two ends of the heat dissipation housing 1, and also play a role in supporting the ventilation duct 8.

[0030] This structure transfers the heat generated in the electrode component 5 and the chip 4 to the silicone thermal conductive sheet 6 through the provision of the silicone thermal conductive sheet 6, and the silicone thermal conductive sheet 6 also strengthens the connection between the electrode component 5 and the chip 4, making the connection between the electrode component 5 and the chip 4 more stable, thereby enhancing the anti-interference ability of the power MOSFET device.

[0031] This structure transfers the heat generated in the silicone heat conductive sheet 6 and the chip 4 to the heat conductive plate 10 through the setting of the heat conductive plate 10. The heat in the heat conductive plate 10 is concentrated and dispersed in the ventilation duct 8 through the heat dissipation leaves 12. The heat passes through the ventilation duct 8 and is dispersed outside the heat dissipation housing 1 through the first ventilation port 7 and the second ventilation port 9, which greatly improves the heat dissipation of the electrode component 5 and the chip 4.

[0032] Embodiment 2:

[0033] Reference Figure 5 As shown, in order to further enhance the efficiency of heat dissipation from the ventilation duct 8, an annular column cavity 20 is provided in the ventilation duct 8, and a superconducting liquid 11 is provided in the annular column cavity 20. The heat dissipation blade 12 is located at one end of the ventilation duct 8 and extends into the annular column cavity 20. A plurality of heat-conducting strips 21 are provided on the side of the annular column cavity 20 facing the heat dissipation shell 1, and the heat-conducting strips 21 extend out of the second ventilation port 9. The superconducting liquid 11 has high thermal conductivity and good stability and can be used for a long time. The material of the heat-conducting strips 21 can be selected from aluminum alloy, and the material of the annular column cavity 20 can be selected from copper. The annular column cavity 20 is the same as the ventilation duct 8. When unfolded, it is a hollow plate-like body that can be bent.

[0034] It should be noted that the annular column cavity 20 is configured as a hollow cylinder, wherein the hollow cylinder has a partition, the connection between the heat dissipation blade 12 and the annular column cavity 20 is sealed, and the connection between the annular column cavity 20 and the thermal conductive strip 21 is sealed to prevent leakage of the superconducting liquid 11.

[0035] Through the arrangement and cooperation of the annular column cavity 20, the superconducting liquid 11 and the heat-conducting strip 21, etc., the high thermal conductivity of the superconducting liquid 11 is utilized, so that the heat transferred to the ventilation duct 8 through the heat dissipation leaves 12 can not only be dissipated through the first ventilation port 7 and the second ventilation port 9, but can also be quickly transferred to the heat-conducting strip 21, that is, the outside of the heat dissipation housing 1, through the conduction of the superconducting liquid 11, thereby greatly improving the efficiency of heat dissipation from the ventilation duct 8, and the structural arrangement is exquisite and efficient.

[0036] Embodiment 3:

[0037] Reference Figure 3 and Figure 4 As shown, in order to facilitate better winding and installation of the ventilation duct 8 inside the heat dissipation housing 1, and to facilitate disassembly for maintenance, a buckle 13 is provided on one side wall of the ventilation duct 8. It should be supplemented that, at this time, the ventilation duct 8 is an internally hollow plate-like body that can be bent. The buckle 13 is located on the outer side wall of the ventilation duct 8, and the middle part of the buckle 13 is concave inward. A slot 17 matching the buckle 13 is provided on the other outer side wall of the ventilation duct 8. Notches 14 are provided on the left and right sides of the slot 17. The slot 14 is connected to the slot 17. A spring 15 is provided in the slot 14. The end of the spring 15 away from the slot 14 is fixedly connected to a block 16, and the block 16 is in the shape of a right-angled triangle.

[0038] It should be noted that the end size of the buckle 13 is larger than the middle size, a right angle side of the stopper 16 is connected to the spring 15, another right angle side of the stopper 16 is arranged inward, and the two stoppers 16 are arranged opposite to each other.

[0039] By setting and cooperating with the buckle 13, the notch 14 and the block 16, etc., utilizing the inclined surface of the block 16 facing the entrance of the slot 17 and the elastic potential energy of the spring 15, it is greatly simplified to wind the ventilation duct 8 inside the heat dissipation housing 1, and it is easy to disassemble, so that the chip 4 and the electrode member 5 can be inspected or maintained in time. The structural setting is exquisite, which significantly improves the flexibility of the structure.

[0040] The working principle of this embodiment:

[0041] When the buckle 13 is inserted into the slot 17 under the force of the spring 15 , the stopper 16 will clamp the middle recess of the buckle 13 , making it difficult for the buckle 13 to escape from the slot 17 , thereby rolling into a ring structure and being installed inside the heat dissipation housing 1 .

[0042] When it is necessary to inspect the chip 4 and the electrode component 5, an iron sheet in the prior art can be inserted into the edge of the slot 17 to squeeze the block 16 to move into the notch 14, thereby increasing the distance between the two opposing blocks 16, thereby causing the buckle 13 to detach from the slot 17, and the chip 4 and the electrode component 5 can be inspected.

[0043] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A power MOSFET device heat dissipation structure with high heat dissipation performance, used for heat dissipation of a chip (4) and an electrode member (5), wherein the two ends of the chip (4) are respectively provided with electrode members (5), wherein: The other end of one of the electrode members (5) is connected to an anode lead (2), and the other end of the other electrode member (5) is connected to a cathode lead (3). The invention is characterized in that it comprises a heat dissipation shell (1) arranged outside the chip (4), the heat dissipation shell (1) is cylindrical, a silicone thermal conductive sheet (6) is arranged at the intersection of the grooves of the electrode member (5) and the chip (4), the silicone thermal conductive sheet (6) is at the same height as the outer side surface of the chip (4), a heat conductive plate (10) is arranged on the outer side surface of the silicone thermal conductive sheet (6) and the chip (4), the heat conductive plate (10) covers the outer side surfaces of the chip (4) and the silicone thermal conductive sheet (6), and the heat conductive plate (10) ) is provided with a groove, a heat dissipation blade (12) matching the groove is inserted in the groove, the other end of the heat dissipation blade (12) is connected to a ventilation duct (8), the ventilation duct (8) is distributed in a ring shape around the central axis of the heat dissipation shell (1), the ventilation duct (8) is distributed in a ring shape around the central axis of the heat dissipation shell (1), the second ventilation opening (9) is communicated with the inside of the ventilation duct (8), the second ventilation opening (9) passes through the heat dissipation shell (1), and the ventilation duct (8) is provided with a plurality of first ventilation openings (7) at both ends of the heat dissipation shell (1), and the first ventilation openings (7) are communicated with the inside of the ventilation duct (8).

2. The heat dissipation structure of a power MOSFET device with high heat dissipation according to claim 1, characterized in that: The ventilation duct (8) is made of copper and is surrounded to form a hollow cylinder.

3. The heat dissipation structure of a power MOSFET device with high heat dissipation according to claim 1, characterized in that: The second ventilation openings (9) are arranged in rows, with seven in one row.

4. The heat dissipation structure of a power MOSFET device with high heat dissipation according to claim 1, characterized in that: A top cover (18) is provided between the ventilation duct (8) and the anode lead (2), and a bottom cover (19) is provided between the ventilation duct (8) and the cathode lead (3), for preventing dust from the chip (4) and the electrode member (5).

5. The heat dissipation structure of a power MOSFET device with high heat dissipation according to claim 1, characterized in that: An annular column cavity (20) is arranged in the ventilation duct (8), a superconducting liquid (11) is arranged in the annular column cavity (20), one end of the heat dissipation blade (12) located in the ventilation duct (8) extends into the annular column cavity (20), a plurality of heat conduction strips (21) are arranged on one side of the annular column cavity (20) facing the heat dissipation housing (1), and the heat conduction strips (21) extend out of the second ventilation opening (9).

6. A heat dissipation structure for a power MOSFET device with high heat dissipation according to claim 5, characterized in that: The annular column cavity (20) is configured as a hollow cylinder, the connection between the heat dissipation blade (12) and the annular column cavity (20) is sealed, and the connection between the annular column cavity (20) and the heat conduction strip (21) is sealed, so as to prevent leakage of the superconducting liquid (11).

7. The heat dissipation structure of a power MOSFET device with high heat dissipation according to claim 1, characterized in that: A buckle (13) is provided on one side wall of the ventilation duct (8), the middle part of the buckle (13) is concave inwards, a slot (17) matching the buckle (13) is provided on the other side wall of the ventilation duct (8), notches (14) are provided on the left and right sides of the slot (17), the notches (14) are connected to the slot (17), a spring (15) is provided in the slot (14), and a stopper (16) is fixedly connected to one end of the spring (15) away from the notch (14), and the stopper (16) is in the shape of a right triangle.

8. The heat dissipation structure of a power MOSFET device with high heat dissipation performance according to claim 7, characterized in that: The size of the end of the buckle (13) is larger than that of the middle part, a right angle side of the stopper (16) is connected to the spring (15), another right angle side of the stopper (16) is arranged inwardly, and the two stoppers (16) are arranged opposite to each other.

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